KR101485830B1 - Single Crystal Silicon Componet with Improved Durability for Plasma Appratus and Preparation Method Thereof - Google Patents

Abstract

The present invention relates to a method of manufacturing a silicon component which is used for manufacturing a silicon ring or electrode plate, and a method of manufacturing the same. According to the present invention, a single crystal silicon prepared by growing a single silicon material in [111] direction is used as a single crystal silicon material used for manufacturing a single crystal silicon component used for a plasma processing apparatus. When the single crystal silicon component is applied to the plasma processing apparatus, as compared with a component manufactured with a single crystal silicon grown in [100] direction according to the prior art, the lifetime and durability are increased and a component changing period is increased, so that the maintaining cost of the plasma apparatus and the number of used components may be reduced. When the single crystal silicon component is used for a silicon ring or silicon electrode plate in the plasma processing apparatus, impurities are not generated so that processing a process yield may be improved.

Description

TECHNICAL FIELD [0001] The present invention relates to a single crystal silicon component for a plasma processing apparatus having improved durability and a manufacturing method thereof,

The present invention relates to a single crystal silicon component used in a plasma processing apparatus and a manufacturing method thereof, and more particularly to a single crystal silicon component used for manufacturing a silicon ring or a silicon electrode plate used in a plasma processing apparatus and a manufacturing method thereof.

In the present invention, by changing the crystal orientation of the single crystal silicon used as a component in the plasma processing apparatus, it is possible to increase the service life and durability of the plasma processing apparatus, And it is an object of the present invention to provide a single crystal silicon component having an effect of reducing component usage.

In addition, the single crystal silicon component used in the plasma processing apparatus provided in the present invention is different from conventional monocrystalline silicon in that the crystal growth direction is changed, so that durability during use is increased and service life is increased, There is an advantage that process yield is increased because impurities are not generated when the electrode is processed and used in the form of a silicon ring or a silicon electrode plate.

In general, a semiconductor device is formed by forming a semiconductor film, a conductive film, or an insulating film on a semiconductor substrate, and repeating etching and deposition processes according to the design structure of the semiconductor device. Plasma equipment used in the thin film forming process and etching process in the manufacturing process of semiconductor devices is an essential core equipment and widely used in semiconductor manufacturing processes.

For example, a semiconductor substrate having a thin film deposited thereon is loaded into a plasma etching chamber, a reactive gas is supplied to the etching chamber, a high frequency power is applied to the etching chamber, Let the reaction gas be in a plasma state. The deposited thin film on the semiconductor substrate is etched by the reactive gas in the plasma state. At this time, by forming the unetched barrier layer selectively on the thin film by the reactive gas in the plasma state, the deposited thin film can be etched in a desired shape and structure.

The plasma processing apparatus used in the plasma etching process includes a lower electrode on which a wafer is placed, a focus ring provided on an edge region of the wafer, and an upper electrode provided on the upper side of the lower electrode and having a showerhead function. At this time, the parts such as the focus ring and the upper electrode are generally fabricated using single crystal silicon, and single crystal silicon having a crystal growth direction of [100] is most commonly used. This is because the direction of the single crystal of the silicon wafer used in the semiconductor manufacturing process is generally [100], and since it is most widely used and its physical properties and characteristics are well known, Only silicon parts have been used.

Generally, single crystal silicon can be produced by growing an ingot by various fabrication methods such as a FloatZone (FZ) method and a Czochralski (CZ) method. In a typical ingot manufacturing method, a raw material including polysilicon is placed in a quartz crucible and heated to melt the polycrystalline silicon. Then, a single crystal seed is brought into contact with the central portion of the melt surface, and the seed is slowly lifted to grow a silicon single crystal ingot.

In order to manufacture a focus ring used in a plasma processing apparatus, a single-crystal silicon ingot grown in the [100] direction is cut to form a circular silicon plate, a center hole is formed in the center of the circular silicon plate, After grinding the surface of the silicon ring by using a rotary grinder or the like, one surface of the silicon ring is polished through the single-leaf cross-sectional polishing.

In order to manufacture the upper electrode, a plurality of through-holes are uniformly formed in a circular silicon plate, a silicon plate is ground by a grinder or the like, and then one surface exposed when installed in the plasma processing apparatus is polished .

Japanese Patent Application No. 0918076 discloses a method of reducing grinding wheel marks generated on the surface of a silicon plate and a silicon electrode plate using at least two grinding processes to further improve surface flatness and reduce internal damage, And the effect of preventing particle generation during processing is proposed.

In addition, Japanese Patent No. 0922620 discloses a method of stabilizing the resistance of a single crystal silicon plate by performing a multi-step heat treatment process after a planarization step of processing a silicon ring or a silicon plate used in a plasma processing apparatus.

In addition, in the patent No. 0867389, the double side polishing process is used to simultaneously polish both sides of the single crystal silicon plate, thereby improving the productivity of the polishing process and improving the surface flatness, so that the particle source So that the reliability of the plasma process can be improved.

However, both the silicon ring and the silicon electrode plate, which are parts for the plasma processing equipment disclosed in the above registered patents, use single crystal silicon having a crystal growth direction of [100], and the production of parts for improving the yield of the plasma process and improving the lifetime of the silicon component There is still a limit to the improvement method in the process.

Registration No. 0918076 (registered on September 22, 2009) Registration No. 0922620 (registered on October 21, 2009) Registration No. 0867389 (Registered on November 6, 2008)

The present invention relates to a single crystal silicon component used in a plasma processing apparatus and a method of manufacturing the same. More particularly, the present invention relates to a single crystal silicon component used for manufacturing a silicon ring or a silicon electrode plate used in a plasma processing apparatus, Thereby reducing the cost and improving the semiconductor process yield.

More specifically, the present invention uses monocrystalline silicon in which a single crystal silicon material used for manufacturing a single crystal silicon component used in a plasma processing apparatus is crystal-grown in the [111] direction, The service life and durability are increased and components replacement cycle is increased as compared with the parts using single crystal silicon grown in the crystal orientation in the [100] direction, thereby reducing the maintenance cost of the plasma equipment and the parts usage.

In addition, the single crystal silicon component used in the plasma processing apparatus provided in the present invention is different from conventional monocrystalline silicon in that the crystal growth direction is changed, so that durability during use is increased and service life is increased, Impurities are not generated when used in the form of a silicon ring or a silicon electrode plate in the process of the present invention, so that the process yield can be improved.

In order to achieve the above object, the present invention provides a method of manufacturing a single crystal silicon component for a plasma device having improved durability, comprising: preparing a single crystal silicon ingot having a crystal orientation of [111]; A coring step of fabricating a silicon cylinder and hollow cylinder from the silicon ingot; A slicing step of cutting the silicon cylinder manufactured through the coring step to form a silicon plate, cutting the hollow silicon cylinder to form a hollow silicon ring therein; A multistage grinding step of smoothing a surface of the silicon plate and the silicon ring manufactured in the slicing step; Forming a plurality of through holes in the silicon plate to produce a silicon electrode plate and forming a stepped step inside the silicon ring to produce a silicon ring member; A wet etching step of alkali or acid solution to remove micro-damage during the manufacturing process of the silicon electrode plate and the silicon ring member; A heat treatment step of removing impurities existing inside the silicon electrode plate and the silicon ring member; And a surface polishing step of mirror-polishing the surfaces of the silicon electrode plate and the silicon ring member from which the impurities have been removed, and a method of manufacturing a monocrystalline silicon part for a plasma device having improved durability.

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The step of preparing a single crystal silicon ingot having a crystal orientation of [111], which is an embodiment of the present invention, may be performed by fixing a silicon ingot grown in the [100] direction with a magnetic block, Followed by cutting to produce a plurality of silicon discs in the [111] crystal orientation, followed by laminating the silicon discs in the [111] crystal direction and wax bonding.

In order to cut the silicon ingot grown in the [100] direction so as to have a crystal face with the [111] direction exactly, the silicon ingot grown in the [100] direction is fixed to a precision automatic rotation table, An angle sensor can be used to precisely control the angle of rotation so that the plane to be cut later becomes the [111] direction.

In the method for manufacturing a single crystal silicon component for a plasma device having improved durability according to the present invention, the method further includes a further cleaning step using hydrofluoric acid to remove the oxide film formed on the surfaces of the silicon electrode plate and the silicon ring member after the heat treatment step .

In addition, the multi-stage grinding step may include a primary grinding step and a secondary grinding step with a lower roughness, a higher rotation speed and a lower pressure than the primary grinding step, And a multistage heat treatment process which proceeds in a mixed gas atmosphere or in a mixed atmosphere of nitrogen and inert gas and proceeds at least at a first temperature for a first time and then for a second time at a second temperature.

The surface polishing step is performed by a double polishing step of simultaneously polishing the upper surface and the lower surface of the silicon electrode plate and the silicon ring member. A plurality of carriers are provided between the upper polishing pad portion and the lower polishing pad portion, And the silicon electrode plate or the silicon ring is fixed to each of the carriers, and the mirror polishing proceeds.

Another embodiment of the present invention includes a monocrystalline silicon focus ring and a monocrystalline silicon focus ring for a plasma processing apparatus having improved durability of a monocrystalline silicon material having a [111] crystal orientation, which is produced by the above-described method for producing a silicon part.

Further, another embodiment of the present invention is a manufacturing method of a silicon part, comprising: a single crystal silicon upper electrode for a plasma processing apparatus having a [111] crystal orientation and having improved durability of a single crystal silicon material, And a plasma processing apparatus.

The single crystal silicon electrode of the [111] direction and the single crystal silicon ring of the [111] direction manufactured by the method for producing a silicon part of the present invention have an increased service life and durability compared to the conventional single crystal silicon component of the [100] , The parts replacement cycle is increased, and the maintenance cost of the plasma equipment and the parts usage amount can be reduced.

In addition, the single crystal silicon component used in the plasma processing apparatus provided in the present invention is different from conventional monocrystalline silicon in that the crystal growth direction is changed, so that durability during use is increased and service life is increased, There is an advantage that process yield is increased because impurities are not generated when the electrode is processed and used in the form of a silicon ring or a silicon electrode plate.

By performing the grinding process at least two times with different roughness in the manufacturing process, it is possible to reduce the grinding wheel marks generated on the surface of the silicon plate to improve the flatness, reduce the internal damage, By performing the etching and cleaning processes after the grinding process, the surface flatness can be further improved and the internal damage can be removed.

In addition, by performing the multi-step heat treatment process, it is possible to control the resistivity accurately by reducing the impurity content in the silicon focus ring or the silicon electrode and to have a uniform resistivity depending on the position, thereby generating plasma with high density and uniform density, The yield can be improved.

Therefore, by using the silicon focus ring and the upper electrode of the plasma processing apparatus, the single crystal silicon part manufactured by the method of the present invention can prevent the generation of particles during the plasma processing, thereby improving the reliability of the semiconductor element, The process yield can be improved.

1 is a flowchart illustrating a method of manufacturing a silicon part according to an embodiment of the present invention.
FIGS. 2 and 3 schematically show a method for producing single crystal silicon having a [111] crystal orientation by using single crystal silicon grown in the [100] direction.
4 is a schematic view showing a process of manufacturing the single crystal silicon focus ring and the single crystal silicon upper electrode of the present invention.
FIG. 5 is a diagram illustrating a multi-stage grinding apparatus used in the present invention.
FIG. 6 is a diagram illustrating the lower side of the double side polishing equipment used in the present invention.
FIG. 7 is a diagram schematically showing a plasma processing apparatus equipped with a single-crystal silicon focus ring and a single-crystal silicon upper electrode manufactured by the method of the present invention.
8 and 9 are graphs showing the relationship between the single crystal silicon focus ring in the [100] direction and the single crystal silicon upper electrode manufactured by the method of the present invention, This is a graph of measurement results compared with the case.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It should be understood, however, that the invention is not limited to the disclosed embodiments, but is capable of other various forms of implementation, and that these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know completely. Wherein like reference numerals refer to like elements throughout.

FIG. 1 is a process flow chart for explaining a method of manufacturing a silicon part according to an embodiment of the present invention, and FIGS. 2 to 9 are reference drawings for explaining a method of manufacturing a silicon material according to an embodiment of the present invention . Hereinafter, the present invention will be described in detail with reference to the flow chart of FIG. 1 with reference to FIGS. 2 to 9.

[100] and [111] directions exist in the crystal direction of the single crystal silicon. The [111] plane of the single crystal silicon has a lower surface energy and higher atom density and effective bonding density than the [100] plane. Therefore, in the present invention, attention is focused on the feature of the [111] crystal direction and the main technical feature is to change the material of the single crystal silicon used in the parts of the plasma processing apparatus.

Generally, a manufacturing method of removing a sliding potential is known as a method of manufacturing a single crystal silicon ingot grown to have a crystal plane in the [100] or [111] direction. That is, when pulling the seed crystal so that the crystal orientation coincides with the axis direction of the crystal axis, the seed crystal is subjected to a necking treatment in which the diameter of the single crystal silicon is gradually reduced after the seed crystal is melted in the melt, Can be removed.

More specifically, a raw material including polycrystalline silicon is placed in a quartz crucible, and the polycrystalline silicon is melted by heating at a temperature of 1400 to 1500 ° C. A single crystal seed having the same crystal orientation as the target crystal direction is brought into contact with the central portion of the melt surface, and then the seed is slowly lifted to grow a silicon single crystal ingot.

At this time, it is preferable to rotate the seed and the quartz crucible in the opposite direction. When the seed is pulled up to the upper side of the single crystal melt, surface tension is generated between the seed and the surface of the melt so that the thin silicon films continuously stick to the seed surface And cooled at the same time. Through this process, the silicon atoms in the melt have crystal orientation in the same direction as the seed while the seed surface is cooled.

Here, a magnetic field may be applied in order to make the flow of the melt smooth and stable, in order to increase the viscosity of the melt by applying a magnetic field to the melt, thereby suppressing convection in the melt to perform stable crystal growth

Accordingly, in the present invention, in order to produce a silicon ingot grown in the [111] direction, a raw material containing polysilicon is placed in a quartz crucible and heated at a temperature of about 1,400 to 1,500 ° C to melt the polycrystalline silicon , A single crystal seed having a crystal orientation of [111] is brought into contact with the center of the melt surface, and the seed is slowly lifted to grow a silicon single crystal ingot having a [111] crystal orientation. During the cooling at the surface of the single crystal seed, the silicon atoms in the melt have a [111] direction, which is the crystal direction in the same direction as the seed, and a single crystal silicon ingot having a [111] crystal direction can be produced.

In addition to the method of growing the monocrystalline silicon ingot in the [111] direction from the beginning, the conventional silicon ingot crystal-grown in the [100] direction is rotated and fixed to the magnetic block 30, 10) to cut in the [111] direction, it is possible to manufacture a silicon disc 20 having an elliptical shape, which is not a conventional circular shape. A single crystal silicon ingot having a [111] crystal orientation can also be produced by wax bonding the silicon discs cut to have the elliptical shape with the [111] crystal orientation.

At this time, the rotated [100] silicon ingot is fixed to the [111] crystal plane by using a silicon saw 10 including an abrasive after fixing the rotated angle by using the magnetic block 30 In order to more precisely control the rotation angle, the precision automatic rotation table 40 can be used, and it is preferable to control the rotation angle more precisely through the laser angle sensor 50 (see FIG. 3).

A single crystal silicon ingot having a [111] crystal orientation prepared in this way may be cored to form a hollow silicon cylinder and a silicon cylinder and then cut to form a silicon focus ring or a silicon plate. Alternatively, a silicon ingot The silicon plate may be cut to form the silicon plate, and then the silicon focus ring or the silicon electrode plate may be formed. Hereinafter, the former method will be described as an example.

A large-diameter single-crystal silicon ingot of 8 inches or more having a [111] crystal orientation is prepared (S110), and an unnecessary portion of the upper and lower portions of the single crystal ingot is cut through a cropping process, A single crystal silicon ingot 120a in the [111] direction can be manufactured. A coring process is performed to produce a silicon cylinder 120b having an empty interior as shown in FIG. 4, and a silicon cylinder 120c (S120).

In this embodiment, a method of manufacturing a silicon cylinder 120b having an empty portion for producing a silicon ring and a silicon cylinder 120c for manufacturing a silicon electrode plate by coring a single crystal silicon ingot in the [111] direction This will be described in detail.

The silicon cylinder 120c can be used as a material for the silicon upper electrode 230 and by re-coring the silicon cylinder 120c, the silicon cylinder and the silicon cylinder with an empty interior for manufacturing a silicon ring can be remanufactured It is possible. That is, it is also possible to repetitively produce a silicon cylinder and a silicon-centered cylinder having a small size by repeatedly coring the silicon-centered cylinder as necessary.

It is preferable that the diameter of the silicon cylinder 120c and the inner diameter of the silicon cylinder 120b manufactured through the coring process are adjusted according to the dimensions of the silicon component to be manufactured. For example, when the minimum inner diameter of the silicon ring is 1, the inner diameter of the silicon cylinder is preferably 0.90 to 0.99. This is because the inner diameter may increase when the subsequent grinding process and the inner diameter polishing process are performed. If it is out of the above range, it may be difficult to control the process conditions of the grinding process and the polishing process.

The coring may be performed from the top surface to the bottom surface of the silicon ingot at one time, or may be performed at a time from the top surface of the silicon ingot to the bottom surface of the silicon ingot , The silicon ingot may be inverted to perform the secondary coring in the direction from the lower surface to the upper surface. Further, after the coring step, it is preferable to carry out a cleaning step to remove particles and foreign substances generated in the coring step.

The silicon cylinder 120b having a hollow center at its center is sliced to prepare a silicon ring 130 having a center at the center and the silicon cylinder 120c is sliced to produce a silicon plate 140 (S131 and S132)

The silicon ring 130 and the silicon plate 140 are manufactured by cutting the silicon cylinder 120b and the silicon cylinder 120c to a thin thickness by a sawing process using a wire or a diamond cutting process, The thicknesses of the silicon ring 130 and the silicon electrode plate 140 can be variously adjusted to produce silicon focus rings and silicon electrodes of various products. That is, not only the silicon plate 130 and the silicon electrode plate 140 of the same thickness can be manufactured in the single silicon ingot 120 but also the process parameters including the slicing step are changed, (130) and the silicon electrode plate (140).

Thereafter, at least two grinding processes are performed to planarize the surfaces of the silicon ring 130 and the silicon plate 140 (S141 and S142). 5, the grinding process includes a rotatable table 70, at least three stages 71, 72, and 73 that are provided on the table and can rotate and fix the silicon ring 130 or the silicon plate 140, And at least two grinding wheels 74 and 75 for grinding the silicon ring 130 or the silicon plate 140 fixed on at least two of the stages with different roughnesses.

The table is rotatable in the clockwise direction, for example, and is preferably formed in a circular shape. The plurality of stages are provided on the table at equal intervals from each other, and are preferably rotated clockwise.

Also, the plurality of stages may be provided with a circular concave portion formed on the table, or may be provided with a protruding portion formed in a circular shape. The plurality of stages may include a relatively rough first grinding process and a relatively fine second grinding process using a grinding wheel rotating clockwise after the silicon ring 130 or the silicon plate 140 for carrying out the grinding process is loaded, And the unloading of the silicon ring 130 or the silicon plate 140 after the grinding process is completed.

Further, a plurality of vacuum holes may be formed in each of the plurality of stages, or a porous chuck may be used. After the silicon ring or the silicon plate 140 is loaded on the stage through the vacuum hole, the air between the silicon ring 130 or the silicon plate 140 and the stage is vacuumed by the vacuum pump (not shown) The silicon ring 130 or the silicon plate 140 is vacuum-fixed on the stage.

In this case, in the case of the silicon ring 130, it is more preferable that the vacuum hole is formed only in the portion corresponding to the silicon ring 130. When the vacuum hole is used, the silicon ring 130 or the silicon plate 140 having various sizes can be fixed in a vacuum. The vacuum hole can be fixed by various methods such as mechanical method as well as vacuum fixing.

It is preferable that each of the grinding wheels 74 and 75 is provided so as to be in only a partial contact with the stages 72 and 73 and to have a slight inclination. For example, the grinding wheels 74 and 75 may be installed so that the grinding wheels 74 and 75 are in half contact with the center of the stages 72 and 73, and are inclined toward the portions in contact with the stages 72 and 73. The grinding wheels 74 and 75 are provided with diameters smaller than the diameters of the stages 72 and 73 and are preferably rotated, for example, in the clockwise direction.

Further, grinding members of different sizes, for example, diamond segments, are provided on the lower surfaces of the grinding wheels 74 and 75, respectively. On the lower surface of the grinding wheel, there is provided a segment with rough diamond particles having 200 to 400 meshes. On the lower surface of another grinding wheel, fine diamond particles having 1000 to 3000 meshes are attached Segments are preferably provided.

Thus, a rough grinding process is performed by one grinding wheel 74, and a fine grinding process is performed by another grinding wheel 75. [ Here, it is preferable that the rough diamond segment has 325 mesh and the fine diamond segment has 2000 mesh. As a result, coarse grinding and fine grinding can be performed by two grinding wheels 74 and 75 in one equipment. Each of the grinding wheels is different in rotational speed, removal amount, and pressure, and the respective grinding conditions are as follows.

First, the grinding wheel is rotated at a speed of 2300 to 2700 rpm, and the grinding object, that is, the silicon ring 130 or the silicon plate 140 is removed to a thickness of 50 to 70 mu m. For example, the silicon ring 130 or the silicon plate 140 having a thickness of 4.06 mm is ground to a thickness of 4 mm.

The grinding wheel can be ground at a pressure of two stages. The grinding wheel is grinded to a predetermined thickness at a falling pressure of 130 to 160 mu m / min, and then grinding at a falling pressure of 90 to 120 mu m / min. . Another grinding wheel is rotated at a speed of 2800 to 3200 rpm, and the grinding object is removed to a thickness of 10 to 30 탆.

For example, the first grinding 4 mm-thick silicon ring 130 or the silicon plate 140 is ground to a thickness of 3.98 mm. In addition, the grinding wheel is grinding at a pressure of three steps. Grinding is carried out at a falling pressure of 15 to 20 탆 / min after initially grinding a predetermined thickness at a falling pressure of 25 to 35 탆 / min and rotating only the grinding wheel To grind the grinding surface. At this time, the stage rotates at a speed of 100 to 130 rpm. Then, the process of grinding the grinding surface without applying pressure is performed for about 10 seconds, and after grinding, the grinding wheel is raised at a speed of 50 to 70 mu m / min for about 10 seconds. Of course, at this time, the grinding conditions of the other grinding wheels can be variously modified. That is, considering the thickness of the silicon ring 130 or the silicon plate 140, the rotational speed, the removal amount, and the grinding pressure can be adjusted according to the thickness to be removed by grinding.

The surfaces of the upper and lower surfaces of the silicon ring 140 and the silicon ring 140 cut by the wire are planarized by at least two grinding processes using the above-described grinding equipment. That is, a wire saw mark by wire sawing is removed by a rough grinding process using a grinding wheel to improve surface flatness, and a grinding process that can be generated by a rough grinding process by a fine grinding process using a grinding wheel The grinding wheel mark is removed to reduce the surface roughness.

After the grinding process, a cleaning process for removing particles and sludge generated in the grinding process can be further performed. At this time, a double scrubber process or a roller type scrubber brush can be used for the cleaning process. That is, in the double scrubber process, impurities on the upper and lower surfaces of the wafer can be simultaneously removed by using a double scrubber device provided with brushes in the upper and lower areas.

The silicon ring member 150 is fabricated by processing the inner wall surface and / or the outer wall surface of the silicon ring 130 and the silicon electrode plate 160 having the plurality of through holes 141 (S151, S152).

The silicon ring member 150 may be manufactured by various types of processing processes depending on the application in which the silicon focus ring is used. In this embodiment, a part of the inner wall surface of the silicon ring 130 is removed to produce the silicon ring member 150 having the stepped step (A). That is, the silicon ring member 150 according to the present embodiment includes a through-hole having a first diameter at an inner center thereof and a groove having a second diameter larger than the first diameter at an upper side of the through-hole. Of course, the present invention is not limited to this, and the silicone ring member 150 may include various patterns including extended protrusions and recessed grooves as required, by a processing step. It is preferable that the processing of the inner and outer sides of the center-free silicon ring 130 is performed through a grinding process.

At this time, it is preferable to use CNC (Machine Numerical Control) equipment or MCT (Machining Center Tool) equipment for the processing of the silicon ring 130, and a cleaning process to remove particles and sludge . It is also possible to perform a defect inspection of the silicon ring member 150 manufactured after the processing step.

It is also preferable that a plurality of through holes 141 are formed in the silicon plate 140 to regrind the outer diameter of the silicon plate 140 before forming the silicon electrode plate 160. This is because it is preferable to process the outer diameter of the silicon plate 140 so as to meet the desired outer diameter because the outer diameter of the silicon cylinder 120c manufactured by the foregoing core ring is limited by the silicon ring. Of course, the grinding of the outer diameter of the silicon plate 140 may be performed in the step of the silicon cylinder 120c after the coring process. In this case, the outer diameter of the silicon plate 140 is preferably CNC equipment.

After the outer diameter machining, the silicon plate 140 can be cleaned and the inspection can be performed. After machining the outer diameter of the silicon plate 140, the silicon plate 140 is bonded onto the substrate of the perforation equipment. That is, the silicon plate 140 is bonded onto the glass substrate for hole punching. A plurality of through holes 141 are formed through a drilling process using a drill or an ultrasonic wave.

Here, since the hole drilling process using the ultrasonic wave can drill several hundred or more holes at the same time, the productivity can be improved and holes can be formed in the entire silicon plate 140 through the drilling process. Of course, when the diameter of the silicon plate 140 is large, the silicon plate 140 may be divided into a plurality of regions, and then a perforation process may be performed for each region. Thereafter, a cleaning process is performed to remove particles and sludge generated in the perforation process after the perforation process, and a defect inspection of the silicon electrode plate 160 having a plurality of through holes 141 may be performed.

After the silicon ring member 150 having the stepped portion A formed on the silicon ring is formed and a plurality of through holes 141 are formed in the silicon plate 140 to form the silicon electrode plate 160, An etching process and a cleaning process are performed to further alleviate the grinding wheel marks of the member 150 and the silicon electrode plate 160 and to remove damage (S160).

The etching process uses an alkaline chemical comprising KOH and / or NaOH or an acidic chemical such as HNO3. After the etching process, a cleaning process using SC1 (NH4O + H2O2 + H2O) is performed. In addition, it is preferable to perform a rinsing process between the etching process and the cleaning process. By this etching process and the cleaning process, the grinding wheel marks of the silicon ring member 150 or the silicon electrode plate 160 are further relaxed, do.

The etching process and the cleaning process of the silicon ring member 150 and the silicon electrode plate 160 will be described in more detail as follows.

First, the silicon ring member 150 and the silicon electrode plate 160 are rinsed at room temperature for about 300 seconds using deionized water, mixed with KOH, H2O2, and ultrapure water at a ratio of about 1: 1: 15 The solution is subjected to a primary etching process at a temperature of 65 to 75 DEG C for about 300 seconds. Subsequently, the first etching solution is rinsed at a room temperature for about 300 seconds using ultrapure water, and then a secondary etching process is performed at a temperature of 60 to 70 ° C. for about 300 seconds using a 45% KOH solution. Subsequently, the secondary etching solution was rinsed at a room temperature for 300 seconds using ultrapure water, and a cleaning process was performed at a temperature of 65 to 75 ° C. for 300 seconds using SC1 solution in which NH4O, H2O2 and H2O were mixed at a ratio of 1: 1: . Subsequently, the cleaning solution was rinsed at room temperature for about 300 seconds using ultra-pure water, and the silicone ring member 150 or the silicon electrode plate 140 was immersed in ultrapure water at 35 to 55 ° C. for about 30 seconds, The air drying process is then performed at a temperature of 70 to 90 DEG C for about 100 seconds. It is preferable that the etching process and the cleaning process are performed in a clean room where no fine dust is generated.

After the etching and cleaning processes, it is preferable to perform the donor killing process by the heat treatment process to stabilize the resistance in the silicon ring member 150 and the silicon electrode plate 160. The heat treatment process may be a multi-stage heat treatment process, The heat treatment may be performed at step S170.

The donor killing process is a process for removing impurities, particularly oxygen, from the inside through the heat treatment of the silicon ring member 150 and the silicon electrode plate 140. Various types of heat treatment apparatuses including a furnace type, an oven type or a belt type can be used as the heat treatment. The heat treatment apparatus enables a precise heat treatment using a programmable mechanism capable of setting the temperature and time. It is preferable that the heat treatment temperature and the time can record the result by digital or analog etc. by a program.

The multistage heat treatment process is carried out in multiple stages while raising the temperature. For example, the multistage heat treatment process is carried out while raising the temperature in three stages. That is, the temperature is raised to a first temperature at a temperature rise rate of 1 to 100 ° C / min at room temperature, and then heat-treated for 1 to 60 minutes. Thereafter, the temperature is raised from the first temperature to the second temperature at a rate of 1 to 100 ° C / After the heat treatment is performed for 1 to 60 minutes, the temperature is increased from the second temperature to the third temperature at a rate of 1 to 100 ° C / min, and then the heat treatment is performed for 1 to 180 minutes. Then, the temperature is lowered to room temperature at a temperature lowering rate of 1 to 100 ° C / min at the third temperature. Here, the first temperature is preferably 100 to 300 ° C, the second temperature is preferably 300 to 500 ° C, and the third temperature is preferably 600 to 1000 ° C.

The annealing process is preferably performed by supplying oxygen and an inert gas or nitrogen and an inert gas. After the annealing process, an oxide film or a nitride film is formed on the silicon ring member 150 or the silicon electrode plate 160, and the grown oxide film or nitride film is removed by grinding, wet etching or polishing using hydrogen fluoride, which can be performed later.

The heat treatment may be performed not only in a multistage heat treatment process but also in a high temperature heat treatment process. In this case, the temperature is raised to 600 to 1000 ° C at a temperature rise rate of 1 to 100 ° C / min at room temperature and then heat treated for 1 to 180 minutes. Then, the temperature is lowered to room temperature at a temperature lowering rate of 1 to 100 ° C / min.

The resistances of the silicon ring member 150 and the silicon electrode plate 160 are stabilized by the donor killing process such as the multistage heat treatment process and then the resistance of the silicon ring member 150 and the silicon electrode plate 160 is measured, Laser marking is performed for the history management of the material.

In the next step, the double side polishing process is performed to planarize both surfaces of the silicon ring member 150 and the silicon electrode plate 160 to reduce the surface roughness, thereby manufacturing the single crystal silicon focus ring 220 and the silicon upper electrode 230 (S180).

The polishing process can first improve the flatness of the stepped region of the silicon ring member 150 by the stepwise polishing process and maintain the surface roughness at 5 Å or less. That is, the inner and the stepped surfaces (through-hole and groove areas) of the silicone ring member 150 are polished, and then a cleaning process is performed. After the cleaning process, the upper and lower surfaces of the silicon ring member 150 or the silicon electrode plate 160 are simultaneously polished using a double side polishing apparatus (see FIG. 6).

The double side polishing equipment includes an upper polishing pad portion and a lower polishing pad portion 90. The lower polishing pad portion includes a circular lower plate 91, a lower polishing pad 92 provided on the lower plate, and a plurality of carriers 93 having predetermined through holes on the lower polishing pad. The silicon ring member 150 or the silicon electrode plate 140 is positioned and fixed in the through hole 94 of the carrier 93 to prevent them from escaping.

Here, the upper polishing pad (not shown) and the lower plate 90 are rotated in different directions to simultaneously polish the upper surface and the lower surface of the silicon ring member 150 or the silicon electrode plate 140. It is also preferable that the plurality of carriers 93 rotate as well. On the other hand, a plurality of through holes 94 may be formed in one carrier 93. That is, two to four through holes 94 may be formed in one carrier 93 to increase the number of the silicon ring member 150 or the silicon electrode plate 140 that performs the double side polishing process at one time.

The apparatus for double side polishing process can perform polishing by changing only the carrier 92 regardless of the shape, size or thickness of the silicon ring member 150 or the silicon electrode plate 160. The surface roughness of the upper surface and the lower surface of the silicon ring member 150 or the silicon electrode plate 160 can be controlled by controlling the slurry and the surfactant injected during the polishing process.

In other words, general polishing was performed by coating a wax on one surface of a silicon plate with a cross-section polishing and adhering to a polishing head. As a result, the flatness can be varied depending on the uniformity of the wax coating. However, in the case of the double side polishing according to the present invention, the wax coating process is not performed. This is because a carrier suitable for the thickness of the silicon ring member 150 or the silicon electrode plate 160 to be processed is manufactured and a carrier hole is formed in accordance with the size of the silicon ring product.

For example, the upper polishing pad portion (not shown) rotates counterclockwise at a rotation speed of about 10 to 20 rpm at a pressure of 0.1 to 1.0 kg / cm 2, The pad portion 90 rotates clockwise at a rotation speed of about 30 to 40 rpm. At this time, the carrier 92 also rotates clockwise at a rotation speed of about 10 to 20 rpm. Further, the first slurry is introduced at an amount of 3 to 5 L / min to be polished, and then the second slurry is introduced at a rate of 2 to 3 L / min to polish. Here, the first slurry is a slurry having a larger size of abrasive grains than the second slurry. The silicon ring member 150 or the silicon electrode plate 160 is polished by polishing using the first slurry, and polishing using the second slurry The surface roughness of the silicon ring member 150 or the silicon electrode plate 160 is further improved. In addition, it is also possible to introduce the chemical after the polishing using the second slurry, which prevents particles from adhering to the surface of the silicon ring member 150 or the silicon electrode plate 160 so that the cleaning process can be completed later.

The double side polishing process can improve the flatness of the upper surface and the lower surface of the silicon ring member 150 or the silicon electrode plate 160 and maintain the surface roughness to 5 Å or less. The surface roughness can be maintained at 1 to 5 angstroms and can be maintained similar to the surface roughness of the silicon wafer of 2 angstroms. In this way, the surface roughness of the silicon ring is made similar to the surface roughness of the wafer, and the plasma uniformity on the upper side of the wafer is increased to improve the plasma processing efficiency.

After the double side polishing process, a cleaning process is performed to remove slurry and particles. Thus, a silicon focus ring according to the present embodiment is fabricated. Then, the standard of the manufactured silicon focus ring is measured, and final cleaning is performed. It is preferable to perform a 3D inspection to measure the size of the silicon focus ring. Then, visual inspection is performed after final cleaning. Visual inspection includes surface inspection and edge chipping inspection, which allows inspection of particles and deep scratches.

Of course, the silicon electrode according to an embodiment of the present invention is not limited to this, and in the case where the total diameter of the silicon electrode is larger than the diameter of the silicon central cylinder, a silicon electrode can be manufactured using a plurality of bodies.

Although the grinding step and the etching step and the cleaning step are performed at least two times in the above embodiment, the etching and cleaning steps may be selectively performed. This may be performed after the grinding step by etching and cleaning according to surface planarization and defect patterns Quot; can be selectively performed.

In the above embodiment, the donor killing process by the multi-stage heat treatment is performed after the plurality of through holes 141 are formed in the silicon ring member 150 and the silicon plate 140. However, And the silicon central cylinder 120c, or may be performed after the planarization process. As another example, when a silicon ingot is cut to form a silicon plate and a center hole or a plurality of through holes are formed at the center of the silicon plate to form a silicon focus ring or a silicon electrode plate, the donor killing process by multi- After the plate is formed, after forming a center hole or a plurality of through holes in the silicon plate, or after the grinding process.

7 is a diagrammatic view illustrating a plasma etching apparatus including a silicon focus ring 220 and a silicon upper electrode 230 manufactured according to a method according to an embodiment of the present invention.

The plasma etching apparatus includes a silicon focus ring 220 made of a silicon ring manufactured by the above-described manufacturing method, and a silicon upper electrode 230 made of a silicon electrode plate. 7, the plasma etching apparatus includes a chamber 200, a lower electrode 210 on which the wafer 201 is placed, and a lower electrode 210 on which a silicon (not shown) provided in an edge region of the wafer 201 placed on the lower electrode 210, A focus ring 220, a silicon upper electrode 230 provided on the upper side of the lower electrode 210 and integrally formed with the showerhead, first and second silicon electrodes 230 and 230 for supplying power to the lower electrode 210 and the silicon upper electrode 230, 2 power supply units 240 and 250, respectively.

In the following Examples and Comparative Examples, the single crystal silicon upper electrode of the [111] direction and the silicon focus ring manufactured by the method of manufacturing a single crystal silicon component for a plasma device improved in durability according to the present invention, And the etching rate difference between the silicon upper electrode and the silicon focus ring in the conventional [100] direction was observed in an actual plasma processing facility.

[ Example ]

The single crystal silicon upper electrode of the [111] direction and the silicon focus ring manufactured by the above method and the silicon focus ring were attached to the [100] single crystal silicon upper electrode and the silicon focus ring plasma processing apparatus formed under the same conditions, W RF power and a 20 W BAIS condition, the etching amount of the upper silicon single crystal silicon electrode and the silicon focus ring per unit time was measured.

The measurement results of the etching rate per unit time of the single crystal silicon focus ring in the [111] direction and the single crystal silicon focus ring in the [100] direction of the present invention are shown in Table 1 And FIG. 8, respectively. The unit of etching amount per unit time of the measured single crystal silicon focus ring is mm / hr.

Measuring position [100] single crystal silicon focus ring [111] single crystal silicon focus ring One 0.0022 0.0016 2 0.0020 0.0015 3 0.0022 0.0015 4 0.0023 0.0016 5 0.0024 0.0017 6 0.0026 0.0017 7 0.0028 0.0018 8 0.0027 0.0020 9 0.0027 0.0020 10 0.0027 0.0019 11 0.0026 0.0019 12 0.0026 0.0019 13 0.0027 0.0019 14 0.0027 0.0019 15 0.0027 0.0019 16 0.0028 0.0020 17 0.0029 0.0020 18 0.0030 0.0021 19 0.0031 0.0022 20 0.0033 0.0023 21 0.0035 0.0026

The same experiment was carried out for the [111] direction single crystal silicon upper electrode in the same manner as the above-mentioned single crystal silicon focus ring measurement method. For the 41 points along the diameter of the upper electrode, And the unit of the etching amount is mm, which means the value of the etching amount measured after 150 hours of the process. The results are shown in the following Table 2 and FIG.

Measuring position [100] Single crystal upper electrode [111] single crystal upper electrode One 0.065 0.045 2 0.075 0.052 3 0.085 0.060 4 0.092 0.064 5 0.099 0.069 6 0.105 0.074 7 0.111 0.078 8 0.116 0.081 9 0.122 0.085 10 0.127 0.089 11 0.132 0.092 12 0.136 0.095 13 0.140 0.098 14 0.145 0.102 15 0.149 0.104 16 0.152 0.106 17 0.156 0.109 18 0.159 0.111 19 0.162 0.113 20 0.164 0.115 21 0.166 0.116 22 0.164 0.115 23 0.162 0.113 24 0.160 0.112 25 0.157 0.110 26 0.154 0.108 27 0.151 0.106 28 0.148 0.104 29 0.144 0.101 30 0.140 0.098 31 0.137 0.096 32 0.133 0.093 33 0.128 0.090 34 0.123 0.086 35 0.118 0.083 36 0.113 0.079 37 0.107 0.075 38 0.100 0.070 39 0.092 0.064 40 0.081 0.057 41 0.071 0.050

As can be seen from the measurement results of Tables 1 and 2, the single crystal silicon ring and the silicon upper electrode for a plasma facility made of the [111] direction single crystal silicon produced by the manufacturing method of the present invention, The etching amount per unit time was reduced by about 30% as compared with the monocrystalline silicon product, and thus, the service life and durability were prolonged by at least 30%.

In addition, the single crystal silicon component used in the plasma processing apparatus of the present invention has a crystal growth direction different from that of monocrystal silicon widely used in the prior art, thereby increasing service life due to increase in durability during use, The impurity is not generated when used in the form of a silicon focus ring or a silicon upper electrode, and thus the process yield can be improved.

The silicon focus ring and the silicon upper electrode manufactured according to the manufacturing method of the present embodiment are not limited to the above-described etching apparatus but may be applied to various plasma processing apparatuses, and the present invention is not limited to the above- And may be implemented in various other forms. In other words, the above-described embodiments are provided so that the disclosure of the present invention is complete, and those skilled in the art will fully understand the scope of the invention, and the scope of the present invention should be understood by the appended claims .

1: Ingot 10 crystal grown in [100] direction 10: Silicon saw
20: Silicon disc 30 cut in the [111] direction 30: Magnetic block
40: precision automatic rotation table 50: laser angle sensor
71, 72, 73: stage 74, 75: grinding wheel
90: lower polishing pad part 91: lower plate
92: lower polishing pad 93: carrier
120: [111] crystal orientation silicon ingot
120b: Silicon cylinder 120c: Silicon cylinder
130: silicon ring 140: silicon plate
141: Through hole 150: Silicone ring member
160: silicon electrode plate 200: chamber
201: silicon wafer 210: lower electrode
220: single crystal silicon focus ring 230: single crystal silicon upper electrode
240, 250: Power supply

Claims (10)

Preparing a single crystal silicon ingot having a crystal orientation [111];
A coring step of fabricating a silicon cylinder and hollow cylinder from the silicon ingot;
A slicing step of cutting the silicon cylinder manufactured through the coring step to form a silicon plate, cutting the hollow silicon cylinder to form a hollow silicon ring therein;
A multistage grinding step of smoothing a surface of the silicon plate and the silicon ring manufactured in the slicing step;
Forming a plurality of through holes in the silicon plate to produce a silicon electrode plate and forming a stepped step inside the silicon ring to produce a silicon ring member;
A wet etching step of alkali or acid solution to remove micro-damage during the manufacturing process of the silicon electrode plate and the silicon ring member;
A heat treatment step of removing impurities existing inside the silicon electrode plate and the silicon ring member; And
And a surface polishing step of mirror-polishing the surfaces of the silicon electrode plate and the silicon ring member from which the impurities have been removed,
The step of preparing the single crystal silicon ingot having the crystal orientation [111]
The silicon ingots grown in the [100] direction are fixed with a magnetic block and then cut along the (111) crystal plane using a silicon cutting wire to produce a plurality of silicon original plates in the [111] crystal direction, And laminating and wax-bonding the silicon discs in the direction of the silicon wafer. delete delete The method according to claim 1,
Further comprising the step of removing the oxide film formed on the surfaces of the silicon electrode plate and the silicon ring member after the heat treatment step. The method according to claim 1,
Wherein the multistage grinding step comprises a primary grinding step and a secondary grinding step with a lower roughness, a higher rotation speed and a lower pressure than the primary grinding step. Manufacturing method of silicon parts The method according to claim 1,
The heat treatment step is a step of performing a multi-step heat treatment process that proceeds in a mixed atmosphere of oxygen and an inert gas or a mixed atmosphere of nitrogen and inert gas, proceeds at least at a first temperature for a first time, and then proceeds at a second temperature for a second time A method of manufacturing a monocrystalline silicon part for a plasma device having improved durability The method according to claim 1,
The surface polishing step includes a double polishing step of simultaneously polishing the upper surface and the lower surface of the silicon electrode plate and the silicon ring member, and a plurality of carriers are disposed between the upper polishing pad portion and the lower polishing pad portion, And the silicon electrode plate or the silicon ring member is fixed to each of the carriers. [5] The method for manufacturing a single crystal silicon part for a plasma device according to claim 1, A single crystal silicon upper electrode for a plasma processing apparatus improved in durability and made of a single crystal silicon material having a [111] crystal orientation, which is manufactured by the method for manufacturing a silicon part according to any one of claims 1 and 4 to 7. A single crystal silicon focus ring for a plasma processing apparatus improved in durability and made of a single crystal silicon material having a [111] crystal orientation, which is manufactured by the manufacturing method of a silicon part according to any one of claims 1 and 4 to 7, A single crystal silicon upper electrode for a plasma processing apparatus improved in durability and made of a single crystal silicon having a [111] crystal orientation, which is manufactured by the manufacturing method of a silicon part according to any one of claims 1 and 4 to 7, A plasma processing apparatus comprising a focus ring

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