KR100918076B1 - Method of manufacturing a silicon matter for plasma processing apparatus - Google Patents

Abstract

The present invention relates to a method for manufacturing a silicon material, comprising the steps of preparing a silicon plate, performing at least two grinding processes to planarize the silicon plate, and processing the silicon plate to form a silicon ring or silicon electrode plate. Steps. The method may further include performing an etching and cleaning process after the grinding process.

According to the present invention, the flatness can be improved by reducing grinding wheel marks generated on the surfaces of the silicon plate and the silicon electrode plate by at least two grinding processes, and the internal damage can be reduced. In addition, by performing the etching and cleaning process, the surface flatness can be further improved, and the internal damage can be removed.

Silicon Edge Rings, Silicon Electrodes, Coring, Grinding, Etching, Cleaning, Surface Flatness

Description

Method of manufacturing a silicon material for a plasma processing apparatus {Method of manufacturing a silicon matter for plasma processing apparatus}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a silicon material for a plasma processing device, and more particularly to a method for producing a silicon material for a plasma processing device for producing a silicon ring or a silicon electrode plate used in a plasma processing device.

Generally, a semiconductor device is manufactured by forming a semiconductor film, a conductive film or an insulating film on a semiconductor substrate, and etching them as necessary. Recently, plasma technology is used to form and etch thin films in the manufacturing process of semiconductor devices to increase process efficiency. For example, an etching process using plasma technology may be described. A semiconductor substrate on which a predetermined thin film is deposited is loaded into a plasma etching chamber, and then a reaction gas is supplied to the etching chamber, and a high frequency power is applied to the etching chamber. To be The thin film on the semiconductor substrate is etched by the reaction gas in the plasma state. As described above, the reaction gas may be plasma-formed to increase reactivity with the thin films on the semiconductor substrate, and the thin film may be removed by physical collision of the plasma-formed reaction gas, thereby improving the removal performance of the thin film.

The plasma processing apparatus includes a lower electrode on which the wafer is placed, an edge ring provided on an edge region of the wafer, and an upper electrode provided on the lower electrode and having a showerhead function. Here, the edge ring and the upper electrode are manufactured using silicon.

In order to manufacture the edge ring, the silicon ingot is cut to form a circular silicon plate, and then a center hole is formed in the center of the circular silicon plate to form a silicon ring, and the surface of the silicon ring is ground using a rotary grinding machine. One side of the silicon ring is then polished through single-sided polishing. In order to fabricate the upper electrode, a plurality of through holes are uniformly formed in a circular silicon plate, and the silicon plate is ground with a grinding machine or the like, and then polished on one surface exposed when installed in the plasma processing apparatus through cross-sectional polishing. Prepare the electrode.

However, in the grinding process of the silicon plate, a grinding wheel mark is formed deep and wide on the surface of the silicon plate to reduce the flatness of the silicon plate and to cause damage in the silicon plate. Using such a silicon plate as an edge ring or an upper electrode serves as a particle source in the plasma treatment process. Therefore, impurities are added to the film deposited by the plasma treatment process, or the film to be etched is not etched in a desired pattern, resulting in lowering the reliability of the semiconductor device.

The present invention provides a method for producing a silicon material for a plasma processing apparatus that can improve surface flatness by grinding a silicon plate at least twice, and prevent particle generation therein, thereby reducing particle generation sources.

The present invention provides a method for producing a silicon material for a plasma processing apparatus that further improves surface flatness by performing an etching and cleaning process after grinding.

Method for producing a silicon material according to an aspect of the present invention comprises the steps of preparing a silicon plate; Planarizing the silicon plate by performing at least two grinding processes; And processing the silicon plate to form a silicon ring or a silicon electrode plate.

The preparing the silicon plate may include: cutting a silicon ingot to manufacture a silicon disc; And selectively forming a center hole in the center of the silicon disc.

The preparing of the silicon plate may include: manufacturing a silicon cylinder and a silicon center cylinder by coring a central portion of the silicon ingot; And cutting the silicon cylinder to form a silicon plate having an empty inside, and cutting the silicon central cylinder to form a silicon electrode plate.

In the grinding process, the first grinding is performed with the first roughness, and the second grinding is performed with the second roughness lower than the first roughness.

The primary grinding process is performed at a lower rotational speed and higher pressure than the secondary grinding process, and removes the silicon plate thicker.

The primary and secondary grinding processes are performed while rotating the silicon plate, and the rotation speed of the silicon plate is faster than the secondary grinding process in the primary grinding process.

The primary grinding process grinds to a first pressure and then to a second pressure lower than the first pressure.

The secondary grinding process grinds to a first pressure, grinds to a second pressure lower than the first pressure, and then grinds without applying pressure.

And performing an etching and cleaning process after the grinding process.

The etching step is carried out using any one of KOH, NaOH, HNO ₃ .

The cleaning process is carried out using SC1 (NH ₄ O + H ₂ O ₂ + H ₂ O).

The etching process is performed at least twice using different etching solutions.

The etching process is performed by the primary etching process using a mixed solution of KOH, H ₂ O ₂ and ultrapure water and then the secondary etching process using a 45% KOH solution.

After performing the cleaning process, performing a lifting process using ultrapure water, and further comprising the step of performing an air dry process.

According to the present invention, the grinding wheel mark generated on the surface of the silicon plate can be reduced by performing the grinding process at least twice with different roughnesses of the silicon plate, thereby improving flatness and reducing internal damage.

Then, by performing the etching and cleaning process after the grinding process, the surface flatness can be further improved, and the internal damage can be removed.

Therefore, by using the silicon edge ring and the upper electrode of the silicon plate produced by such a process, it is possible to prevent the generation of particles during plasma processing, thereby improving the reliability of the semiconductor device.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention; However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention and to those skilled in the art. It is provided for complete information. Like numbers refer to like elements in the figures.

1 is a flowchart illustrating a method of manufacturing a silicon material according to an embodiment of the present invention, Figures 2 to 15 is a reference diagram for explaining a method of manufacturing a silicon material according to an embodiment of the present invention. . Hereinafter, a description will be given with reference to the drawings of FIGS. 2 to 15 based on the flowchart of FIG. 1. The method for manufacturing a silicon material according to the present invention may, for example, form a hollow silicon cylinder and a silicon center cylinder by coring a silicon ingot and then cutting it to form a silicon edge ring or a silicon electrode plate. After cutting the ingot to form a silicon plate, a silicon edge ring or a silicon electrode plate may be formed using the silicon plate. Hereinafter, the former method will be described as an example.

S110: as shown in Figure 2 to produce a large diameter (8 inches or more) ingot 110. The ingot 110 may be grown using various manufacturing methods such as a melt zone (FZ) method, a Czochralski (CZ) method, and the like, and is preferably grown using the Czochralski method.

An example of the production method of the ingot 110 is as follows. A raw subsidiary material including polycrystalline silicon (Polysilicon) is placed in a quartz crucible and heated. The polycrystalline silicon is melted by heating at a temperature of 1400-1500 ° C. Subsequently, a single crystal seed having the same crystal direction as the target crystal direction is brought into contact with the melt surface center portion. The seed is then slowly lifted up to grow the silicon single crystal ingot 110. At this time, the seed and the quartz crucible are rotated in opposite directions. When the seed is pulled up the single crystal melt, surface tension is generated between the seed and the melt surface so that the thin silicon films are constantly stuck to the seed surface and simultaneously cooled. While cooling at the seed surface, the silicon atoms in the melt have crystal orientation in the same direction as the seed. Here, a magnetic field may be applied to smoothly and stably flow the melt. As an example, a horizontal magnetic field is applied to grow a large ingot. At this time, 1000 Gauss or more is applied as the horizontal magnetic field. The horizontal magnetic field refers to the magnetic field applied in the direction perpendicular to the growth direction of the ingot.

S120: Cropping cuts unnecessary portions of the upper and lower portions of the single crystal ingot so that the ingot 110 has a cylindrical shape as shown in FIG. 3.

The single crystal ingot 110 grown through the Czochralski method is manufactured in a cylindrical shape in which the upper and lower parts are sharply protruded as shown in FIG. 2. Therefore, the cropping process is performed to cut the protrusions of the upper and lower portions of the ingot 110 to produce a circular single crystal silicon cylinder 120a. This can facilitate subsequent processing. At this time, the single crystal ingot may be cut into a plurality of block units. After performing the cropping process, the quality of the single crystal silicon cylinder 120a is inspected. By such a quality test, the outer diameter evaluation and edge chip evaluation of the single crystal silicon cylinder 120a may be performed.

S130: By performing a coring process to produce a hollow silicon cylinder 120b as shown in Figure 4 (a), and to produce a silicon center cylinder 120c as shown in Figure 4 (b). .

In this embodiment, the silicon cylinder 120b and the silicon center cylinder 120c, which are hollow at the center for manufacturing the silicon edge ring, are manufactured at the same time by coring a single ingot. The silicon center cylinder 120c may be used for a silicon electrode, and the silicon center cylinder 120c may be corrugated again to produce a silicon cylinder and a silicon center cylinder having an empty center for manufacturing a silicon edge ring. That is, by repeatedly coring a silicon center cylinder, a small silicon cylinder and a silicon center cylinder can be repeatedly produced.

It is preferable that the diameter of the silicon center cylinder 120c and the through hole 121 manufactured through the coring process are adjusted to the inner diameter of the silicon edge ring to be manufactured. For example, when the minimum inner diameter of the silicon edge ring is 1, the diameter of the through hole 121 of the silicon cylinder 120b is preferably 0.90 to 0.99. This is because the inner diameter may increase if a subsequent grinding process and an inner diameter polishing process are performed. If it is out of the range it may be difficult to control the process conditions of the grinding process and polishing process. The through hole 121 is formed in the growth direction of the ingot. That is, it is provided in the direction parallel to the longitudinal direction of the silicon cylinder 120a. The diameter of the silicon central cylinder 120c is about 0.1 to 10% smaller than the diameter of the through hole 121. This is because there is an area to be removed by coring.

Meanwhile, before the coring, the silicon cylinder 120a may be cut into a plurality of blocks, and then coring may be performed for each silicon block. Coring may be performed at once from the upper surface of the silicon cylinder 120a to the lower surface. Of course, the first surface of the silicon cylinder 120a may be subjected to primary coring in the lower surface direction, and then the second surface of the silicon cylinder 120a may be inverted to perform the secondary coring in the upper surface direction.

In addition, the cleaning process is performed to remove particles and foreign substances generated during the coring process.

S141 and S142: by cutting the silicon cylinder (120b) that is corrugated and is provided with a circular through-hole 121 in the center, as shown in Figure 5 (a) the hollow silicon plate 130, Then, the silicon center cylinder 120c is sliced to produce the silicon electrode plate 140 as shown in FIG. 5 (b).

The silicon plate 130 and the silicon electrode plate 140 are manufactured by cutting the silicon cylinder 120b and the silicon central cylinder 120c to a thin thickness by a sawing process using a wire or a cutting process using a diamond. Since the thickness of the silicon plate 130 and the silicon electrode plate 140 manufactured during the cutting process can be variously adjusted, the silicon edge ring and the silicon electrode of various products can be manufactured. That is, not only the silicon plate 130 and the silicon electrode plate 140 having the same thickness are manufactured in the single silicon cylinder 120b and the silicon center cylinder 120c, but also the silicon plate 130 and the silicon electrode plate having various thicknesses. 140 can be fabricated.

S151 and S152: The surface of the silicon plate 130 and the silicon electrode plate 140 is planarized by performing at least two grinding processes.

The planarization process is carried out using grinding equipment as shown in FIG. Grinding equipment for performing at least two grinding processes according to an embodiment of the present invention shown in Figure 7 is provided on a rotatable table 70, the table 70, the silicon plate 130 or silicon electrode plate The roughness of the at least three stages 71, 72 and 73 which are rotatable and which is fixed to the 140, and the silicon plate 130 or the silicon electrode plate 140 fixed on the at least two stages 72 and 73 are different from each other. At least two grinding wheels 74 and 75 for grinding.

The table 70 is rotatable clockwise, for example, and is preferably manufactured in a circular shape.

The plurality of stages 71, 72, and 73 are spaced apart from each other at equal intervals and provided on the table 70, for example, rotated clockwise. The stages 71, 72, and 73 may be provided with a recess formed in a circular shape on the table 70, and may be provided with a protrusion formed in a circular shape. The plurality of stages 71, 72, and 73 are relatively rotated using the grinding wheels 74 and 75 while rotating in a clockwise direction after the silicon plate 130 or the silicon electrode plate 140 is loaded to perform the grinding process. The rough first grinding process and the relatively fine second grinding process are performed, and the silicon plate 130 or the silicon electrode plate 140 on which the grinding process is completed is unloaded. In addition, a plurality of vacuum holes 76 may be formed in the plurality of stages 71, 72, and 73, respectively, as shown in FIG. 8. Also, a porous chuck can be used. As the vacuum hole 76 is formed, the silicon plate 130 or the silicon electrode plate 140 is loaded and seated on the stages 71, 72 and 73, and then the silicon plate 130 or the vacuum plate (not shown). Air between the silicon electrode plate 140 and the stages 71, 72, and 73 is exhausted through the plurality of vacuum holes 76, so that the silicon plate 130 or the silicon electrode plate 140 has the stages 71, 72, and 73. Is fixed on the vacuum. At this time, in the case of the silicon plate 130, the vacuum hole 76 is more preferably formed only in the portion corresponding to the silicon plate 130. By using the vacuum hole 76 as described above, the silicon plate 130 or the silicon electrode plate 140 having various sizes may be vacuum fixed. Meanwhile, the silicon plate 130 or the silicon electrode plate 140 may be fixed by various methods such as mechanical fixing as well as vacuum fixing.

Each of the grinding wheels 74 and 75 is installed so as to partially contact the stages 72 and 73 and have a slight inclination. For example, the grinding wheels 74 and 75 are installed so as to be in half contact with the center portion of the stages 72 and 73 and to be inclined toward the part in contact with the stages 72 and 73. The grinding wheels 74 and 75 are provided with a diameter smaller than the diameters of the stages 71, 72 and 73, for example, rotate in a clockwise direction. Further, the lower surface of each of the grinding wheels 74 and 75 is provided with grinding members of different sizes, for example, segments to which diamond particles are attached. The lower surface of the grinding wheel 74 is provided with segments to which rough diamond particles having 200 to 400 mesh are attached, and the lower surface of the grinding wheel 75 has fine diamond having 1000 to 3000 mesh. Segments with particles attached are installed. Therefore, the rough grinding process is performed by the grinding wheel 74 and the fine grinding process is performed by the grinding wheel 75. Here, it is preferable that the coarse diamond segment has 325 mesh, and the fine diamond segment has 2000 mesh. This allows coarse grinding and fine grinding by two grinding wheels 74 and 75 in one machine. In addition, each of the grinding wheels 74 and 75 has different rotation speeds, removal amounts, pressures, and the like, and respective grinding conditions will be described below. First, the grinding wheel 74 is rotated at a speed of 2300 ~ 2700rpm, so that the grinding object, that is, the silicon plate 130 or silicon electrode plate 140 is removed to a thickness of 50 ~ 70㎛. For example, 4.06 mm thick silicon plate 130 or silicon electrode plate 140 is ground to be 4 mm thick. The grinding wheel 74 grinds at a pressure of two stages. The grinding wheel 74 grinds to a predetermined thickness at a lower pressure of 130 to 160 µm / min and then to a lower pressure of 90 to 120 µm / min, where the stage 72 is 170 Rotate at a speed of ˜230 rpm. In addition, the grinding wheel 75 is rotated at a speed of 2800 ~ 3200rpm, so that the grinding object is removed to a thickness of 10 ~ 30㎛. For example, the 4 mm thick silicon plate 130 or silicon electrode plate 130 ground by the grinding wheel 74 is ground to be 3.98 mm thick. The grinding wheel 75 grinds at a pressure of three stages. The grinding wheel 75 grinds to a predetermined thickness at a falling pressure of 25 to 35 µm / min, and then to a falling pressure of 15 to 20 µm / min. 75) Only rotate to smooth the grinding surface. At this time, the stage 73 rotates at a speed of 100 to 130 rpm. Then, the process of trimming the grinding surface without applying pressure is performed for about 10 seconds, and after grinding, the grinding wheel 75 is raised for a time of about 10 seconds at a speed of 50 to 70 µm / min. Of course, the grinding conditions of the grinding wheels 74 and 75 can be variously modified. For example, in consideration of the thickness of the silicon plate 130 or the silicon electrode plate 140, the rotation speed, the removal amount and the grinding pressure may be adjusted according to the thickness to be removed by grinding.

The surfaces of the upper and lower surfaces of the silicon plate 130 and the silicon electrode plate 140 cut by the wires are planarized by at least two grinding processes using the grinding equipment. That is, the surface flatness is improved by removing the wire saw mark by the wire sawing by the rough grinding process using the grinding wheel 74, and the rough grinding by the fine grinding process using the grinding wheel 75. Surface roughness is reduced by eliminating grinding wheel marks that may be generated by the process.

9 (a) and 9 (b) are photographs of the surface of the silicon electrode plate after the conventional grinding process and the grinding process according to the present invention, and as shown in FIG. 9 (a) after the conventional grinding process. Although a deep and wide grinding wheel mark is generated, it can be seen that after the rough grinding process and the fine grinding process according to the present invention, the grinding wheel mark is significantly reduced as shown in FIG. 9 (b).

10 and 11 are graphs of surface roughness measured by grinding wheel marks on a surface of a silicon electrode plate after performing a conventional grinding process and a grinding process according to the present invention. (A), (b) and (c) of FIGS. 10 and 11 respectively measure the surface roughness of the center portion, the center portion and the outer portion, and the outer portion of the silicon electrode plate. The horizontal axis represents the width in mm. As shown in the drawing, the depth of the grinding wheel mark on the silicon electrode plate as a whole appears to be 0.5 μm or more and more than 1 μm deeper than the surface of the silicon electrode plate (0.00 of the vertical axis), and the surface roughness is also bad. . On the contrary, after the grinding process according to the present invention, the grinding wheel mark is removed from the center of the silicon electrode plate as a whole, so that the depth is very shallow and the surface roughness is improved.

After the grinding process, a cleaning process for removing particles and sludge generated during the grinding process may be further performed. At this time, the cleaning process may use a double scrubber process or a roller type scrubber brush. In the double scrubber process, impurities on the upper and lower surfaces of the wafer may be removed at the same time by using a double scrubber device having a brush in the upper and lower regions.

S161 and S162: by processing the inner wall and / or outer wall surface of the silicon plate 130 to produce a silicon ring member 150 as shown in Figure 12, through the hole drilling as shown in Figure 13 silicon electrode A plurality of through holes 141 are manufactured in the plate 140.

The silicon ring member 150 may be manufactured by various types of processing processes depending on the use of the silicon edge ring. In this embodiment, a part of the inner wall surface of the silicon plate 130 is removed to produce a silicon ring member 150 having a stepped step (area A in FIG. 12). That is, the silicon ring member 150 according to the present exemplary embodiment includes a through hole having a first diameter at an inner center thereof and a groove having a second diameter larger than the first diameter at an upper side of the through hole. Of course, the present invention is not limited thereto, and the silicon ring member 150 may include various patterns including extension protrusions and recessed grooves as necessary. Processing of the inner and outer surfaces of the silicon plate 130 having an empty center is preferably performed through a grinding process. At this time, the silicon plate 130 is preferably used for CNC equipment or machining center tool (MCT) equipment. In addition, a cleaning process for removing particles and sludge generated during the processing process may be performed after the processing process. In addition, a defect inspection of the silicon ring member 150 manufactured after the machining process may be performed.

In addition, before manufacturing the plurality of through holes 141 in the silicon electrode plate 140, it is preferable to regrind the outer diameter of the silicon electrode plate 140 according to a standard. Since the outer diameter of the silicon center cylinder 120c produced by the above-mentioned coring is limited by the silicon edge ring, it is preferable to reprocess the outer diameter of the silicon electrode plate 140 to match the desired outer diameter. Of course, grinding of the outer diameter of the silicon electrode plate 140 may be performed at the silicon center cylinder 120c level after the coring process. At this time, the machining of the outer diameter of the silicon electrode plate 140 is preferably using a CNC equipment. After the processing of the outer diameter, the silicon electrode plate 140 may be cleaned and inspected. After processing the outer diameter of the silicon electrode plate 140, the silicon electrode plate 140 is bonded on the substrate of the drilling equipment. That is, the silicon electrode plate 140 is bonded on the glass substrate for hole drilling. Then, a plurality of through holes 141 are formed through a drilling process using a drill or ultrasonic waves. Here, the drilling process using ultrasonic waves can improve productivity because it can drill several hundred or more holes at the same time. In addition, holes may be formed in the entire silicon electrode plate 140 through a drilling process. Of course, when the diameter of the silicon electrode plate 140 is large, the silicon electrode plate 140 may be divided into a plurality of regions, and then a perforation process may be performed for each region. Thereafter, a cleaning process for removing particles and sludge generated during the drilling process may be performed after the drilling process. In addition, a defect inspection of the silicon electrode plate 140 having the plurality of through holes 141 may be performed.

S171 and S172: After forming the silicon ring member 150 and forming the plurality of through holes 141 in the silicon electrode plate 140, the grinding wheel marks of the silicon ring member 150 and the silicon electrode plate 140 are further added. Etching and cleaning processes are performed to mitigate and remove damage.

The etching process uses acidic chemicals such as HNO ₃ or alkali based chemicals including KOH and / or NaOH. After the etching process, a cleaning process using SC1 (NH ₄ O + H ₂ O ₂ + H ₂ O) is performed. In addition, a rinsing step is performed between the etching step and the cleaning step. By the etching process and the cleaning process, the grinding wheel mark of the silicon ring member 150 or the silicon electrode plate 140 is further alleviated and damage is removed.

The etching process and the cleaning process of the silicon ring member 150 and the silicon electrode plate 140 will be described in more detail as follows. First, the silicon ring member 150 and the silicon electrode plate 140 are rinsed at room temperature for about 300 seconds by using deionized water, and then KOH, H ₂ O ₂ and ultrapure water are about 1: 1: 15. The primary etching process is performed for about 300 seconds using the mixed solution mixed at a temperature of 65 ~ 75 ℃. Subsequently, after rinsing the primary etching solution for about 300 seconds at room temperature using ultrapure water, a secondary etching process is performed for about 300 seconds at a temperature of 60 to 70 ° C. using a 45% KOH solution. Subsequently, after rinsing the secondary etching solution at room temperature for about 300 seconds using ultrapure water, using a SC1 solution in which NH ₄ O, H ₂ O ₂ and H ₂ O were mixed at 1: 1: 10, Carry out a cleaning process at a temperature of about 300 seconds. Subsequently, rinse the cleaning solution for about 300 seconds at room temperature using ultrapure water, soak the silicone ring member 150 or the silicon electrode plate 140 for about 30 seconds in 35 to 55 ° C ultrapure water, and then slowly lift and dry the resulting solution. The air drying process is performed at a temperature of ˜90 ° C. for about 100 seconds. The etching process and the cleaning process are preferably performed in a clean room where no fine dust is generated. This is because the subsequent process is performed in a clean room.

14 (a) and 14 (b) are planar photographs of the silicon ring member before and after the etching process. Before the etching process, the grinding wheel mark is applied as shown in FIG. 14 (a). Some residual and damage may occur to the silicon ring member 150 or the silicon electrode plate 140, and after performing the etching process, the grinding wheel mark and damage are almost completely removed as shown in FIG. 14 (b).

FIG. 15 is a graph showing the etch thickness with etching time at 70 ° C. of a 45% KOH solution, showing an etch rate of about 0.72 μm / min.

S181 and S182: The donor killing process is performed to stabilize the resistance in the silicon ring member 150 and the silicon electrode plate 140.

The donor killing process is a process of removing dopants therein through heat treatment of the silicon ring member 150 and the silicon electrode plate 140. In the heat treatment, a heat treatment apparatus including a furnace type or an oven type and a belt type may be used. And heat processing is performed at the temperature of 400-1000 degreeC. At this time, it is effective to prevent the silicon ring member 150 and the silicon electrode plate 140 from being contaminated during the heat treatment.

The donor killing process stabilizes the resistance of the silicon ring member 150, measures the resistance of the silicon ring member 150, and performs laser marking for history management of the silicon ring.

S191 and S192: through the polishing process to planarize the outer surface of the silicon ring member 150 and the silicon electrode plate 140 and reduce the surface roughness to produce a silicon edge ring and a silicon electrode.

The polishing process may first improve the flatness by polishing the stepped regions of the silicon ring member 150 and the silicon electrode plate 140 through the step polishing process, and may maintain the surface roughness at 5 kPa or less. That is, the inner surface and the step surface (through hole and groove region) of the silicon ring member 150 are polished, and the upper surface (surface) and lower surface (back surface) of the silicon electrode plate 140 are polished. After the cleaning process, the silicon ring member 150 and the silicon electrode plate 140 are polished. A cleaning process is then performed to remove the slurry and particles. Through this, a silicon edge ring and a silicon electrode according to the present embodiment are manufactured.

Subsequently, the size of the fabricated silicon edge ring and the silicon electrode is measured, and a final cleaning process is performed. It is preferable to perform 3D inspection for the measurement of the size of the silicon edge ring and the silicon electrode. After the final cleaning, a visual inspection is performed. Visual inspection can perform surface inspection and edge chipping inspection, which allows inspection of particles and deep scratches.

Of course, the silicon electrode according to an embodiment of the present invention is not limited thereto, and when the total diameter of the silicon electrode is larger than the diameter of the silicon central cylinder, the silicon electrode may be manufactured using a plurality of bodies.

Meanwhile, in the above embodiment, it has been described that at least two grinding processes and etching and cleaning processes are performed, but the etching and cleaning processes may be selectively performed. That is, at least two grinding processes may be performed without performing the etching and cleaning processes. This means that after the grinding process, the etching and cleaning process may be selectively performed according to the surface planarization and defect appearance.

16 is a cross-sectional conceptual view of a plasma etching apparatus having a silicon material manufactured according to the method according to an embodiment of the present invention described above.

The plasma etching apparatus includes a silicon edge ring 220 and a silicon upper electrode 230 made of a silicon material by the manufacturing method described above.

As shown in FIG. 16, the plasma etching apparatus includes silicon provided in a chamber 200, a lower electrode 210 on which the wafer 201 is placed, and an edge region of the wafer 201 on the lower electrode 210. First and second edges 220 and the lower electrode 210 are provided on the upper side and supply the power to the upper showerhead integrated silicon upper electrode 230 and the lower electrode 210 and the silicon upper electrode 230. 2 power supply parts 240 and 250 are provided.

In the present embodiment, the surface roughness of the silicon ring 220 and the silicon upper electrode 230 may be similar to the surface roughness of the wafer to further increase the uniformity of the plasma and minimize the generation of particles.

The silicon ring 220 and the silicon upper electrode 230 manufactured according to the manufacturing method of the present embodiment are not limited to the etching apparatus described above, but may be applied to various plasma processing apparatuses.

The present invention is not limited to the above-described embodiments, but may be implemented in various forms. That is, the above embodiments are provided to make the disclosure of the present invention complete and to fully inform those skilled in the art of the scope of the present invention, and the scope of the present invention should be understood by the claims of the present application. .

1 is a flow chart illustrating a method of manufacturing a silicon material according to an embodiment of the present invention.

2 is a schematic perspective view of a silicon ingot.

3 is a schematic perspective view of a silicon cylinder after cropping.

4 is a schematic perspective view of a silicon cylinder and a silicon center cylinder.

5 is a schematic perspective view of a silicon plate and a silicon electrode plate after wire sawing.

6 is a schematic perspective view of a silicon plate and a silicon electrode plate after grinding;

7 is a schematic plan view of the grinding equipment.

8 is a schematic plan view of a stage in which a vacuum hole is formed.

9 is a planar photograph after grinding according to the prior art and the present invention.

10 is a graph for explaining a defect aspect after conventional grinding.

11 is a graph for explaining a defect aspect after grinding according to the present invention.

12 is a schematic perspective view of a silicon ring member.

Fig. 13 is a schematic perspective view of the silicon electrode plate after the through holes are formed.

14 is a planar photograph before and after etching;

FIG. 15 is a graph showing removal thickness with etching time using 45% KOH solution. FIG.

16 is a cross-sectional conceptual view of a plasma etching apparatus having a silicon material manufactured according to the present invention.

<Explanation of symbols for the main parts of the drawings>

110: ingot 120: silicon cylinder

130: silicon plate 140: silicon electrode plate

141: through hole 150: silicon ring member

200: chamber 201: wafer

210: lower electrode 220: silicon ring

230: silicon upper electrode 240, 250: power supply

Claims (14)

Preparing a silicon ingot; Coring a central portion of the silicon ingot to produce a silicon cylinder and a silicon center cylinder; Cutting the silicon cylinder to form a hollow silicon plate, and cutting the silicon central cylinder to form a silicon electrode plate; Performing at least two grinding processes to planarize the silicon plate and the silicon electrode plate; And Manufacturing the silicon ring member by processing the silicon plate, and forming a plurality of through holes in the silicon electrode plate; The at least two grinding processes are performed by adjusting the rotation speed, pressure, and segment of the grinding wheel to first grind to a first roughness, and then to second grind to a second roughness lower than the first roughness, And the primary grinding process is performed at a lower rotation speed, higher pressure, and coarse segments than the secondary grinding process to remove the silicon plate and the silicon electrode plate thicker. delete delete delete delete The method of claim 1, wherein the primary and secondary grinding process is carried out while rotating the silicon plate and the silicon electrode plate, the rotational speed of the silicon plate and the silicon electrode plate is higher than the secondary grinding process in the primary grinding process Fast silicone material manufacturing method. The method of claim 1, wherein the first grinding process grinds to a first pressure and then grinds to a second pressure lower than the first pressure. The method of claim 1, wherein the secondary grinding process grinds to a first pressure, grinds to a second pressure lower than the first pressure, and then grinds without applying pressure. The method of claim 1, further comprising performing an etching and cleaning process after the grinding process. The method of claim 9, wherein the etching step is performed using any one of KOH, NaOH, and HNO ₃ . The method of claim 9, wherein the cleaning process is performed using SC1 (NH ₄ O + H ₂ O ₂ + H ₂ O). The method of claim 9, wherein the etching step is performed at least twice using different etching solutions. The method of claim 12, wherein the etching process is a silicon material of performing a secondary etching process using a 45% KOH solution after the first etching process using a mixed solution of KOH, H ₂ O ₂ and ultrapure water Manufacturing method. The method of claim 9, further comprising: performing a lifting process using ultrapure water after performing the cleaning process, and performing an air drying process.

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