CN115338995A - Hard material processing device and system thereof - Google Patents
Hard material processing device and system thereof Download PDFInfo
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- CN115338995A CN115338995A CN202110566356.1A CN202110566356A CN115338995A CN 115338995 A CN115338995 A CN 115338995A CN 202110566356 A CN202110566356 A CN 202110566356A CN 115338995 A CN115338995 A CN 115338995A
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- 238000012545 processing Methods 0.000 title claims abstract description 85
- 239000000463 material Substances 0.000 title claims abstract description 81
- 238000010438 heat treatment Methods 0.000 claims abstract description 131
- 238000000034 method Methods 0.000 claims abstract description 79
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 56
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 55
- 239000003921 oil Substances 0.000 claims description 35
- 238000000227 grinding Methods 0.000 claims description 33
- 238000003754 machining Methods 0.000 claims description 32
- 238000005520 cutting process Methods 0.000 claims description 30
- 230000008569 process Effects 0.000 claims description 23
- 238000004140 cleaning Methods 0.000 claims description 17
- 238000007517 polishing process Methods 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 230000007423 decrease Effects 0.000 claims 1
- 238000005299 abrasion Methods 0.000 abstract description 3
- 238000005498 polishing Methods 0.000 description 22
- 235000012431 wafers Nutrition 0.000 description 16
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 7
- 229910052731 fluorine Inorganic materials 0.000 description 7
- 239000011737 fluorine Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000314 lubricant Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000001050 lubricating effect Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- QRSFFHRCBYCWBS-UHFFFAOYSA-N [O].[O] Chemical compound [O].[O] QRSFFHRCBYCWBS-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Powder Metallurgy (AREA)
- Turning (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Paper (AREA)
Abstract
The invention provides a hard material processing device, which is suitable for an object to be processed containing hard materials and at least comprises the following components: a heating element for performing a first heating process on the workpiece to heat the workpiece to a first temperature sufficient to reduce the hardness of the hard material of the workpiece, thereby temporarily reducing the hardness of the hard material of the workpiece during the first heating process; and at least one first processing element, which performs a first processing procedure on the object to be processed, which temporarily reduces the hardness of the hard material, while the heating element performs the first heating procedure on the object to be processed. The invention can improve the processing speed, improve the productivity and reduce the abrasion of processing elements.
Description
Technical Field
The present invention relates to an apparatus and a system, and more particularly, to an apparatus and a system for machining a hard material.
Background
In recent years, as semiconductor technology is developed rapidly, technology products are greatly advanced. In semiconductor manufacturing, a processing device is often used to perform a cutting, grinding or polishing process on a material such as a wafer. Semiconductor materials, such as silicon carbide (SiC), have the advantages of wide bandgap properties, high hardness, high thermal conductivity, and chemical inertness, and are therefore more desirable materials for high-temperature electronic devices and high-frequency high-power devices. However, the high hardness of silicon carbide is not easy to be processed by slicing, grinding or polishing, and will cause wear to the tools such as machining elements. Therefore, how to improve the processing efficiency and quality of high hardness semiconductor material is one of the important research and development issues.
Disclosure of Invention
In view of the above problems in the prior art, an object of the present invention is to provide a hard material processing apparatus and a system thereof, which can increase the processing speed, increase the throughput, and reduce the wear of the processing elements.
To achieve the above object, the present invention provides a hard material processing device, suitable for a workpiece to be processed containing hard material, comprising: a heating device for performing a first heating process on the workpiece to be processed, heating the workpiece to a first temperature sufficient to reduce the hardness of the hard material of the workpiece, thereby temporarily reducing the hardness of the hard material of the workpiece during the first heating process; and at least one first processing element, which performs a first processing procedure on the object to be processed, which temporarily reduces the hardness of the hard material, while the heating element performs the first heating procedure on the object to be processed.
Wherein the first processing procedure is a cutting, grinding and/or polishing procedure.
Wherein the first processing element performs the first processing procedure on the object to be processed in an oil-containing environment containing a high temperature resistant oil capable of withstanding the first temperature.
Wherein the first temperature is greater than 100 ℃.
Wherein the hard material of the workpiece is SiC, and when the first processing element performs the first processing procedure on the workpiece, the heating element performs the first heating procedure on the workpiece at the same time, so that the hardness of the hard material is temporarily reduced to a hardness close to that of Si.
Wherein the object to be processed is a silicon carbide ingot.
Wherein the heating element heats the object to be processed in a contact manner or a non-contact manner in the first heating procedure.
Wherein the heating element is a radio frequency heating element or a microwave heating element.
The present invention further provides a hard material processing system, which is suitable for an object to be processed containing hard materials, and at least comprises: a heating element for performing a first heating process and a second heating process on the object to be processed to heat the object to be processed to a first temperature sufficient to reduce the hardness of the hard material of the object to be processed, thereby temporarily reducing the hardness of the hard material of the object to be processed while performing the first heating process and the second heating process; at least one first processing element for simultaneously performing a first processing operation on the object to be processed, which temporarily reduces the hardness of the hard material, while the heating element performs the first heating operation on the object to be processed; and at least one second working element which, while the heating element performs the second heating process on the object to be worked, simultaneously performs a second working process on the object to be worked which has already undergone the first working process and temporarily reduced the hardness of the hard material.
The hard material processing system of the present invention further comprises at least one cleaning element for performing a cleaning process on the object to be processed after the object to be processed is subjected to the first processing process and/or the second processing process.
Wherein the first processing procedure is a cutting procedure, and the second processing procedure is a grinding and/or polishing procedure.
Wherein the first processing element and/or the second processing element performs the first processing procedure and/or the second processing procedure on the object to be processed in an oil-containing environment, and the oil-containing environment contains high-temperature-resistant oil capable of withstanding the first temperature.
Wherein the first temperature is greater than 100 ℃.
Wherein the hard material of the workpiece is silicon carbide, and when the first processing element and/or the second processing element performs the first processing procedure and/or the second processing procedure on the workpiece, the heating element performs the first heating procedure and/or the second heating procedure on the workpiece at the same time, so that the hardness of the hard material is temporarily reduced to be close to that of silicon.
Wherein the object to be processed is a silicon carbide ingot.
Wherein the heating element heats the object to be processed in a contact manner or a non-contact manner in the first heating procedure and/or the second heating procedure.
Wherein the heating element is a radio frequency heating element or a microwave heating element.
In view of the above, the hard material processing apparatus and system thereof according to the present invention may have one or more of the following advantages:
(1) The hardness of the hard material in the object to be processed is reduced by heating the object to be processed, so that the processing element is beneficial to cutting, grinding and/or polishing, the processing speed can be increased, the productivity can be improved, and the abrasion of the processing element can be reduced.
(2) The conventional cutting method requires tempering (heating) after the cutting is completed to reduce stress (stress). The present invention does not need to be tempered again, and can reduce the operation procedure and time cost.
(3) Taking the same cutter as an example, the output of the invention in unit time is larger than that of the traditional technology.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic view of a first embodiment of a hard material machining apparatus according to the present invention.
FIG. 2 is a schematic view of a hard material machining apparatus according to a second embodiment of the present invention.
FIG. 3 is a schematic view of a third embodiment of a hard material machining apparatus according to the present invention.
FIG. 4 is a schematic view of a fourth embodiment of a hard material machining apparatus according to the present invention.
FIG. 5 is a process flow diagram of a hard material machining system of the present invention.
Description of reference numerals:
10: scroll saw cutting machine
20: grinding polisher
30: radio frequency heating element
40: bearing part
50: air extractor
60: lubricant agent
100: silicon carbide ingot
102: silicon carbide chip
200: oil-containing environment
S10: cutting procedure
S21, S22, S23: cleaning procedure
S30: grinding procedure
S40: polishing procedure
Detailed Description
For the purpose of understanding the technical features, contents and advantages of the present invention and the effects achieved thereby, the present invention will be described in detail with reference to the following embodiments, wherein the drawings are used for illustration and the accompanying specification, and are not necessarily to be construed as the actual scale and precise configuration of the present invention, and the attached drawings are not to be interpreted as limiting the scope of the present invention in the actual implementation. In addition, for the convenience of understanding, the same elements in the following embodiments are illustrated with the same reference numerals.
Furthermore, the words used throughout the specification and claims have the ordinary meaning as commonly understood by one of ordinary skill in the art to which this invention belongs, and the words used in this specification and claims, unless otherwise indicated. Certain terms used to describe the invention are discussed below or elsewhere in this specification to provide additional guidance to those skilled in the art in describing the invention.
The terms "first," "second," "third," and the like, as used herein, are not intended to be limited to the specific order or sequence presented, nor are they intended to be limiting, but rather are intended to distinguish one element from another or from another element or operation described by the same technical term.
Furthermore, as used herein, the terms "comprising," "including," "having," "containing," and the like are open-ended terms that mean including, but not limited to.
The hard material processing device of the present invention is suitable for a workpiece to be processed containing hard material, and at least comprises: a heating element, which is used to perform a first heating procedure on the object to be processed, and heat the object to be processed to a first temperature sufficient to reduce the hardness of the hard material of the object to be processed, so as to temporarily reduce the hardness of the hard material of the object to be processed during the first heating procedure; and at least one first processing element, which performs a first processing procedure on the object to be processed, which temporarily reduces the hardness of the hard material, while the heating element performs the first heating procedure on the object to be processed. The hard material in the present invention may be, for example, silicon carbide, and the workpiece in the present invention may be, for example, a silicon carbide Ingot (SIC Ingot) 100, but is not limited thereto.
The first processing element may be, for example, a Wire-saw slicing machine (Wire-saw slicing machine), a Grinding machine (Grinding machine), or a Polishing machine (Polishing machine). The first processing procedure may be, for example, a cutting, grinding and/or polishing procedure. The heating element may be, for example, a Radio Frequency (RF) heating element or a microwave heating element, with a Frequency of, for example, 1KHz to 10GHz. The heating element of the present invention is used to heat the object to be processed, and although the present invention is exemplified by a radio frequency heating element or a microwave heating element, the present invention is not limited to the above examples. In other words, any heating element may be applied to the present invention as long as it can heat the object to be processed. As shown in fig. 1, taking the rf heating element 30 as an example, the hardness of the silicon carbide ingot 100 can be reduced by heating the silicon carbide ingot 100 through the rf heating element 30, so that the silicon carbide ingot 100 can be more easily processed, for example, the silicon carbide ingot 100 can be cut into silicon carbide slices 102 by the wire saw 10 (the first processing procedure), and the cutting procedure can be more easily performed. The silicon carbide ingot 100 may be, for example, a cylindrical shape, but is not limited thereto. In addition, in the present invention, it is preferable to reduce the hardness of the silicon carbide ingot 100 to a level close to the hardness of silicon (Si), but the hardness of the silicon carbide ingot 100 can be reduced to facilitate the subsequent processing. For example, the hardness value of the silicon carbide ingot 100 is still about 25GPa when the ingot is heated to 200 degrees Celsius, but the hardness value has been reduced to about 21.5GPa when the ingot 100 is heated to 350 degrees Celsius, and the hardness value is only about 15GPa left when the ingot 100 is heated to 500 degrees Celsius. Similarly, if the silicon carbide ingot 100 is heated to 600 degrees celsius, the hardness (14 Gpa) of the silicon carbide ingot 100 is reduced to be close to or the same as the hardness (14 Gpa) of silicon, so that the first processing element may be the same as the processing element for performing the processing procedure on the silicon ingot, thereby performing the first processing procedure on the silicon carbide ingot 100.
In addition, the first processing element may also perform the first processing procedure on the object to be processed (i.e. the silicon carbide ingot 100) in an oil-containing environment 200, wherein the oil-containing environment 200 contains a high temperature resistant oil capable of withstanding the first temperature, and is, for example, a tank filled with the high temperature resistant oil. The first temperature is greater than 100 degrees celsius, and the first temperature is preferably between 200 degrees celsius and 900 degrees celsius, but not limited thereto. As shown in fig. 2, the silicon carbide ingot 100 may be partially or completely placed in an oil-containing environment 200, preferably by completely soaking the silicon carbide ingot 100 in the oil-containing environment 200, and heating the silicon carbide ingot 100 by the rf heating element 30, so that the hardness of the silicon carbide ingot 100 is reduced. The rf heating element 30 may be any one of those available in the market, and the present invention is not limited to any one of a specific brand and a specific model as long as it can heat the workpiece. The silicon carbide ingot 100 having the reduced hardness is then cut into silicon carbide slices 102 by the wire saw 10 (first processing step), whereby the cutting step can be performed more easily. The wire saw 10 may be a wire saw of any type, and the present invention is not limited to the wire saw of any particular brand or model, as long as it can cut the workpiece. Moreover, since the cutting machine for cutting the silicon carbide ingot 100 is well known and is not the focus of the present invention, it will not be described herein. The oil-containing environment 200 may contain, for example, a fluorine-containing oil, which can withstand the first heating process performed by the heating element on the workpiece, and has the characteristics of a wide working temperature range, excellent extreme temperature resistance, chemical corrosion resistance, broad material compatibility, extraordinary electrical insulation, excellent film forming, load bearing capability, and lubricating performance, so as to provide lubricating and uniform heating functions. The oil containing fluorine is, for example, a Fluorinated oil (Per-Fluorinated Poly Ethers, PFPE), and the molecular structure thereof is composed of three components: 21.6% of Carbon (Carbon), 9.4% of Oxygen (Oxygen) and 69.0% of Fluorine (Fluorine). However, although the fluorine-containing oil is exemplified by a fluorine-containing oil and the above-described component composition ratios are exemplified, the present invention is not limited thereto, and the oil in the oil-containing environment 200 can be applied to the present invention as long as it can withstand high temperatures.
The first processing procedure may be a grinding and/or polishing procedure in addition to the aforementioned cutting procedure. In other words, the present invention is not limited to performing the cutting process and then performing the grinding and/or polishing process. According to the actual process requirement, the invention can also perform the grinding and/or polishing process instead of the cutting process on the object to be processed. For the above reasons, the grinding and/or polishing process of the present invention can also be implemented by a commercially available grinding and/or polishing machine, such as a Chemical Mechanical Polishing (CMP) machine, which is suitable for the present invention as long as it can grind and/or polish the workpiece, so that the present invention is not limited to a specific brand or model of grinding and/or polishing machine. Moreover, since the grinding and/or polishing machine for grinding and/or polishing the silicon carbide ingot 100 is a conventional one and is not the technical focus of the present invention, it is not described herein. For example, as shown in fig. 3, the silicon carbide wafer 102 obtained after the cutting process of fig. 1 may be placed on the carrier 40. The carrier 40 may be, for example, a ceramic plate having holes, so that the silicon carbide wafer 102 may be fixed on the carrier 40 by a suction device 50 (e.g., a suction pump) for subsequent grinding and/or polishing processes. Moreover, the hardness of the silicon carbide wafer 102 may be reduced by heating the silicon carbide wafer 102 with the rf heating element 30, which may facilitate the grinding and/or polishing process performed on the silicon carbide wafer 102 by the grinder/polisher 20. The rf heating element 30 in fig. 3 is disposed below the carrier 40, but is not limited thereto. The rf heating element 30 may be disposed in other suitable locations to facilitate heating of the silicon carbide wafer 102 to reduce its hardness. Additionally, the lubricant 60 may also be used when performing the grinding and/or polishing procedure. The lubricant 60 may be, for example, any oil containing fluorine for providing lubrication and uniform heating.
In addition, as shown in FIG. 4, the present invention may also be used to perform a grinding and/or polishing process on the silicon carbide wafer 102 in an oil-containing environment 200. The oil-containing environment 200 contains a high temperature resistant oil capable of withstanding a first temperature. The first temperature is greater than 100 degrees celsius, and the first temperature is preferably between 200 degrees celsius and 900 degrees celsius, but is not limited thereto. For example, the silicon carbide wafer 102 may be partially or completely placed in the oil-containing environment 200, preferably by completely immersing the silicon carbide wafer 102 in the oil-containing environment 200, and heating the silicon carbide wafer 102 by the rf heating element 30, such that the hardness of the silicon carbide wafer 102 is reduced. The silicon carbide wafer 102 with reduced hardness is then ground and/or polished by the grinding and polishing machine 20. As described above, the range of hardness reduction of the silicon carbide wafer 102 is not particularly limited. However, if the hardness of the sliced silicon carbide 102 is reduced to a hardness close to or the same as that of silicon, the polishing and grinding machine 20 of the present invention may be the same as that used to perform the polishing and grinding process on silicon wafers. The rf heating element 30 in fig. 4 is disposed outside the oil-containing environment 200, but is not limited thereto. The rf heating element 30 may be disposed in other suitable locations to facilitate heating of the silicon carbide wafer 102 to reduce its hardness.
In the present invention, the heating element may heat the workpiece in a contact manner or a non-contact manner during the first heating process. For example, the rf heating element 30 may heat the silicon carbide ingot 100 or the silicon carbide slices 102 by directly contacting the silicon carbide ingot 100 or the silicon carbide slices 102, or indirectly, such as through the oil-containing environment 200. Since it is clear to those skilled in the art that the radio frequency heating element 30 may be disposed outside or inside the oil-containing environment 200 according to the disclosure of the present invention, and that the silicon carbide ingot 100 or the silicon carbide sliced piece 102 may be heated by direct contact or indirect manner, the details will not be repeated herein.
The present invention further provides a hard material processing system, which comprises a plurality of hard material processing devices for performing a plurality of processing procedures, or a single hard material processing device for performing a plurality of processing procedures. The hard material processing system of the present invention is suitable for processing a workpiece to be processed containing a hard material, and comprises: a heating element for performing a first heating process and a second heating process on the object to be processed to heat the object to be processed to a first temperature sufficient to reduce the hardness of the hard material of the object to be processed, thereby temporarily reducing the hardness of the hard material of the object to be processed during the first heating process and the second heating process; at least one first processing element, which performs a first processing procedure on the object to be processed with temporarily reduced hardness of the hard material while the heating element performs the first heating procedure on the object to be processed; and at least one second processing element, which, while the heating element performs a second heating process on the object to be processed, performs a second processing process on the object to be processed, which has undergone the first processing process and temporarily reduced the hardness of the hard material. The first processing procedure may be a cutting procedure, for example, and the cutting procedure may be performed by the wire saw 10. The second processing procedure may be, for example, a grinding and/or polishing procedure, and the grinding and/or polishing procedure may be performed by the grinding and polishing machine 20 as described above.
The first heating process and the second heating process may be performed by the same heating element or different heating elements. For example, the first heating process and the second heating process may be performed using the rf heating element 30. Alternatively, the RF heating element 30 may be placed inside or outside a fixed space (such as the aforementioned oil-containing environment 200), and the cutting process and then the grinding and/or polishing process may be performed in the oil-containing environment 200. Alternatively, the two rf heating elements 30 may be disposed at different positions, so that one of the rf heating elements 30 is used for heating during the cutting process, and after the cutting process is completed, the cutting tool may be moved to another position (optionally performing a cleaning process during the transfer process) to use the other rf heating element 30 for heating. The rf heating element 30 may be replaced by a microwave heating element according to actual requirements.
In addition, the hard material processing system of the present invention may further include at least one cleaning element (not shown), wherein the cleaning element performs a cleaning process on the object to be processed after the object to be processed undergoes the first processing process and/or the second processing process. As shown in fig. 5, after the cutting process S10, the workpiece may be cleaned by using a cleaning member S21, followed by a polishing process S30 and a cleaning process S22, and then followed by a polishing process S40 and a cleaning process S23. The cutting procedure S10 may be performed in the manner of fig. 1 or 2, but is not limited thereto. The grinding process S30 and the polishing process S40 can be performed in the manner shown in fig. 3 or fig. 4, and are not limited thereto. By performing the cleaning process, the material remained on the object to be processed in the previous process can be cleaned, so as to perform the next process. In the cleaning process, plasma may be used for cleaning, or a general de-oiled organic solvent, such as acetone, may be used for cleaning. The cleaning procedure of the present invention is used to clean the object to be processed, and the present invention is exemplified by plasma or organic solvent, but the present invention is not limited to the above examples. In other words, any cleaning program may be applied to the present invention as long as it can clean the workpiece. Moreover, a person having ordinary knowledge in the art can clearly know how to clean the workpiece according to the disclosure of the present invention, and therefore, the details thereof are not repeated herein.
In summary, the hard material processing apparatus and the system thereof according to the present invention may have one or more of the following advantages: (1) The hardness of the hard material in the object to be processed is reduced by heating the object to be processed, so that the cutting, grinding and/or polishing procedures of the processing element are facilitated, the processing speed can be increased, the productivity can be improved, and the abrasion of the processing element can be reduced. (2) The conventional cutting method requires tempering (heating) after the cutting is completed to reduce stress (stress). The present invention does not need to be tempered again, and can reduce the operation procedure and time cost. (3) Taking the same cutter as an example, the output of the invention in unit time is larger than that of the traditional technology.
The foregoing is illustrative only and is not limiting. It is intended that all equivalent modifications or variations without departing from the spirit and scope of the present invention shall be included in the appended claims.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (17)
1. A device for machining a hard material, adapted to an object to be machined containing a hard material, comprising:
a heating device for performing a first heating process on the workpiece to be processed, heating the workpiece to a first temperature sufficient to reduce the hardness of the hard material of the workpiece, thereby temporarily reducing the hardness of the hard material of the workpiece during the first heating process; and
at least one first processing element, which simultaneously performs a first processing operation on the object to be processed, which temporarily reduces the hardness of the hard material, while the heating element performs the first heating operation on the object to be processed.
2. The hard material machining apparatus of claim 1, wherein the first machining process is a cutting, grinding and/or polishing process.
3. The hard material machining apparatus of claim 1, wherein the first machining element performs the first machining process on the workpiece in an oil-containing environment containing a high temperature resistant oil capable of withstanding the first temperature.
4. The hard material machining apparatus of claim 1, wherein the first temperature is greater than 100 degrees celsius.
5. The apparatus according to claim 1, 2, 3 or 4, wherein the hard material of the workpiece is silicon carbide, and the first machining element performs the first machining process on the workpiece while the heating element performs the first heating process on the workpiece, so that the hardness of the hard material is temporarily reduced to approach that of silicon.
6. The apparatus of claim 5, wherein the workpiece is a silicon carbide ingot.
7. The hard material machining apparatus according to claim 1, wherein the heating element heats the workpiece in contact or non-contact manner in the first heating process.
8. The hard material processing apparatus of claim 1, wherein the heating element is a radio frequency heating element or a microwave heating element.
9. A system for machining a hard material, adapted to an object to be machined, said object comprising a hard material, comprising:
a heating element for performing a first heating process and a second heating process on the object to be processed to heat the object to be processed to a first temperature sufficient to reduce the hardness of the hard material of the object to be processed, thereby temporarily reducing the hardness of the hard material of the object to be processed while performing the first heating process and the second heating process;
at least one first processing element for simultaneously performing a first processing operation on the object to be processed, which temporarily reduces the hardness of the hard material, while the heating element performs the first heating operation on the object to be processed; and
at least one second machining element, which, while the heating element performs the second heating process on the workpiece, simultaneously performs a second machining process on the workpiece that has already undergone the first machining process and temporarily reduced the hardness of the hard material.
10. The hard material machining system of claim 9, further comprising at least one cleaning element that performs a cleaning process on the workpiece after the workpiece has undergone the first machining process and/or the second machining process.
11. The system of claim 9, wherein the first machining process is a cutting process and the second machining process is a grinding and/or polishing process.
12. The hard material machining system of claim 9, wherein the first machining element and/or the second machining element performs the first machining process and/or the second machining process on the workpiece in an oil-containing environment containing a high temperature resistant oil capable of withstanding the first temperature.
13. The hard material processing system of claim 9, wherein the first temperature is greater than 100 degrees celsius.
14. The system of claim 9, 10, 11, 12 or 13, wherein the hard material of the workpiece is silicon carbide, and the first and/or second processing elements perform the first and/or second processing on the workpiece while the heating element simultaneously performs the first and/or second heating on the workpiece, such that the hardness of the hard material temporarily decreases to approximately the hardness of silicon.
15. The system of claim 14, wherein the workpiece is a silicon carbide ingot.
16. The hard material machining system of claim 9, wherein the heating element heats the workpiece in contact or non-contact manner during the first heating process and/or the second heating process.
17. The hard material processing system of claim 9, wherein the heating element is a radio frequency heating element or a microwave heating element.
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| TWM618520U (en) | 2021-10-21 |
| TWI813999B (en) | 2023-09-01 |
| TW202245034A (en) | 2022-11-16 |
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