TWM590308U - 用於減少電漿蝕刻腔室中的污染的設備 - Google Patents

用於減少電漿蝕刻腔室中的污染的設備 Download PDF

Info

Publication number
TWM590308U
TWM590308U TW108207555U TW108207555U TWM590308U TW M590308 U TWM590308 U TW M590308U TW 108207555 U TW108207555 U TW 108207555U TW 108207555 U TW108207555 U TW 108207555U TW M590308 U TWM590308 U TW M590308U
Authority
TW
Taiwan
Prior art keywords
insulator ring
ring
insulator
kit according
processing
Prior art date
Application number
TW108207555U
Other languages
English (en)
Chinese (zh)
Inventor
雪 常
安卓 阮
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TWM590308U publication Critical patent/TWM590308U/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW108207555U 2018-06-15 2019-06-14 用於減少電漿蝕刻腔室中的污染的設備 TWM590308U (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/010,239 2018-06-15
US16/010,239 US11211282B2 (en) 2018-06-15 2018-06-15 Apparatus to reduce contamination in a plasma etching chamber

Publications (1)

Publication Number Publication Date
TWM590308U true TWM590308U (zh) 2020-02-01

Family

ID=68838753

Family Applications (2)

Application Number Title Priority Date Filing Date
TW108120575A TWI829710B (zh) 2018-06-15 2019-06-14 用於減少電漿蝕刻腔室中的污染的基板支撐件和包括該基板支撐件的處理腔室
TW108207555U TWM590308U (zh) 2018-06-15 2019-06-14 用於減少電漿蝕刻腔室中的污染的設備

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW108120575A TWI829710B (zh) 2018-06-15 2019-06-14 用於減少電漿蝕刻腔室中的污染的基板支撐件和包括該基板支撐件的處理腔室

Country Status (5)

Country Link
US (1) US11211282B2 (enExample)
JP (2) JP7344676B2 (enExample)
KR (1) KR102734548B1 (enExample)
CN (2) CN210110704U (enExample)
TW (2) TWI829710B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI829710B (zh) * 2018-06-15 2024-01-21 美商應用材料股份有限公司 用於減少電漿蝕刻腔室中的污染的基板支撐件和包括該基板支撐件的處理腔室

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102731053B1 (ko) 2020-03-19 2024-11-15 삼성전자주식회사 기판 처리 장치
US12112971B2 (en) * 2021-03-12 2024-10-08 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US20250022691A1 (en) * 2021-12-03 2025-01-16 Lam Research Corporation Wide-coverage edge ring for enhanced shielding in substrate processing systems
US20250236947A1 (en) * 2024-01-19 2025-07-24 Applied Materials, Inc. Dielectric Deposition Ring with Fins for Physical Vapor Deposition
US20250305141A1 (en) * 2024-03-27 2025-10-02 Applied Materials, Inc. Multi-section substrate supports and related methods, process kits, and processing chambers for semiconductor manufacturing
WO2025217112A1 (en) * 2024-04-11 2025-10-16 Lam Research Corporation Edge ring for high temperature tolerance in substrate processing systems

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5292399A (en) * 1990-04-19 1994-03-08 Applied Materials, Inc. Plasma etching apparatus with conductive means for inhibiting arcing
US6051286A (en) 1997-02-12 2000-04-18 Applied Materials, Inc. High temperature, high deposition rate process and apparatus for depositing titanium layers
US5983906A (en) 1997-01-24 1999-11-16 Applied Materials, Inc. Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment
US7244336B2 (en) * 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
US7858898B2 (en) * 2007-01-26 2010-12-28 Lam Research Corporation Bevel etcher with gap control
US8398778B2 (en) * 2007-01-26 2013-03-19 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
US8270141B2 (en) * 2009-11-20 2012-09-18 Applied Materials, Inc. Electrostatic chuck with reduced arcing
US8485128B2 (en) * 2010-06-30 2013-07-16 Lam Research Corporation Movable ground ring for a plasma processing chamber
JP5893516B2 (ja) 2012-06-22 2016-03-23 東京エレクトロン株式会社 被処理体の処理装置及び被処理体の載置台
US8865012B2 (en) * 2013-03-14 2014-10-21 Applied Materials, Inc. Methods for processing a substrate using a selectively grounded and movable process kit ring
CN105009252B (zh) * 2013-03-14 2017-07-28 应用材料公司 使用选择性接地且可移动的处理配环处理基板的方法与装置
US9315891B2 (en) * 2013-03-15 2016-04-19 Applied Materials, Inc. Methods for processing a substrate using multiple substrate support positions
US9449797B2 (en) * 2013-05-07 2016-09-20 Lam Research Corporation Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface
JP6695750B2 (ja) * 2016-07-04 2020-05-20 株式会社荏原製作所 基板ホルダの検査装置、これを備えためっき装置、及び外観検査装置
KR101816861B1 (ko) * 2016-10-21 2018-01-10 (주)제이하라 플라즈마 표면 처리장치
US11211282B2 (en) * 2018-06-15 2021-12-28 Applied Materials, Inc. Apparatus to reduce contamination in a plasma etching chamber
US10847347B2 (en) * 2018-08-23 2020-11-24 Applied Materials, Inc. Edge ring assembly for a substrate support in a plasma processing chamber
US20210066051A1 (en) * 2019-08-28 2021-03-04 Applied Materials, Inc. High conductance lower shield for process chamber
JP7450512B2 (ja) * 2020-10-07 2024-03-15 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR20230055550A (ko) * 2021-10-19 2023-04-26 삼성전자주식회사 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI829710B (zh) * 2018-06-15 2024-01-21 美商應用材料股份有限公司 用於減少電漿蝕刻腔室中的污染的基板支撐件和包括該基板支撐件的處理腔室

Also Published As

Publication number Publication date
TW202013427A (zh) 2020-04-01
TWI829710B (zh) 2024-01-21
CN110610844B (zh) 2025-08-05
CN210110704U (zh) 2020-02-21
CN110610844A (zh) 2019-12-24
US11211282B2 (en) 2021-12-28
JP7344676B2 (ja) 2023-09-14
KR20190142255A (ko) 2019-12-26
KR102734548B1 (ko) 2024-11-25
US20190385891A1 (en) 2019-12-19
JP2019220688A (ja) 2019-12-26
JP3225492U (ja) 2020-03-12

Similar Documents

Publication Publication Date Title
TWI829710B (zh) 用於減少電漿蝕刻腔室中的污染的基板支撐件和包括該基板支撐件的處理腔室
US10745807B2 (en) Showerhead with reduced backside plasma ignition
JP6728117B2 (ja) 取り外し可能なガス分配プレートを有するシャワーヘッド
US7850174B2 (en) Plasma processing apparatus and focus ring
JP5660753B2 (ja) プラズマエッチング用高温カソード
US10998172B2 (en) Substrate processing chamber having improved process volume sealing
JP7340938B2 (ja) 載置台及び基板処理装置
JP7126431B2 (ja) シャワーヘッドおよびガス処理装置
CN102985588A (zh) 用于改善减少颗粒的处理套件屏蔽
US20210351014A1 (en) L-motion slit door for substrate processing chamber
KR102877377B1 (ko) 적재대 및 플라스마 처리 장치
JP5547366B2 (ja) プラズマ処理装置
US20220328293A1 (en) Isolator for processing chambers
US12080522B2 (en) Preclean chamber upper shield with showerhead
JP7361588B2 (ja) エッジリング及び基板処理装置
TW202324592A (zh) 用於靜電卡盤氣體輸送的多孔塞
JP5558035B2 (ja) プラズマ処理装置及び方法
WO2023238750A1 (ja) プラズマ処理装置内構造体、電極板及びプラズマ処理装置
JP7692786B2 (ja) プラズマ処理装置
US20250293008A1 (en) External Cooling Assembly for Substrate Support
JP5743120B2 (ja) プラズマ処理装置及び方法
TW202527110A (zh) 電漿處理設備、上電極組件及其裝配方法
KR20240105308A (ko) 기판 지지 장치