TWM510214U - Chemical mechanical polishing pad dresser - Google Patents
Chemical mechanical polishing pad dresser Download PDFInfo
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- TWM510214U TWM510214U TW104208835U TW104208835U TWM510214U TW M510214 U TWM510214 U TW M510214U TW 104208835 U TW104208835 U TW 104208835U TW 104208835 U TW104208835 U TW 104208835U TW M510214 U TWM510214 U TW M510214U
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本創作關於化學機械研磨領域，特別關於一種化學機械研磨修整器。This work is about the field of chemical mechanical polishing, especially about a chemical mechanical polishing dresser.
化學機械研磨(chemical mechanical polishing，CMP)因其具有可大面積平坦化之特點，因此目前是半導體製程中不可或缺的方法，其係以一置於載台上之拋光墊(pad)，並於拋光墊之表面加入研磨液(slurry)，藉載台之旋轉帶動拋光墊對晶圓表面進行拋光，使晶圓表面平坦以利進行後續製程。而拋光墊之表面需維持一定的粗糙度才能夠保持其拋光之效率，但因在拋光的過程中，拋光晶圓所產生的碎屑會和研磨液混合而逐漸在拋光墊表面形成一硬化層，該硬化層會降低拋光效率，進而縮短拋光墊的使用壽命。Chemical mechanical polishing (CMP) is an indispensable method in the semiconductor process because of its large area flattening. It is a polishing pad placed on the stage. A slurry is added to the surface of the polishing pad, and the polishing pad drives the polishing pad to polish the surface of the wafer to make the surface of the wafer flat for subsequent processes. The surface of the polishing pad needs to maintain a certain roughness to maintain the polishing efficiency. However, during the polishing process, the debris generated by polishing the wafer will mix with the polishing liquid to gradually form a hardened layer on the surface of the polishing pad. The hardened layer reduces the polishing efficiency and thus shortens the life of the polishing pad.
因此，在拋光過程中需有一化學機械研磨修整器(CMP pad conditioner)持續對拋光墊之表面進行修整，以維持拋光墊表面之粗糙度，延長拋光墊的使用壽命。而現行之化學機械研磨修整器包含一基板與複數鑽石磨料，該基板呈圓盤狀並係由不銹鋼所製成，該基板具有一上表面，該等鑽石磨料平均鋪設固定於該上表面，該等鑽石磨料所鋪設的面積至少佔該上表面之面積的50%。藉由現行之化學機械研磨修整器之鑽石磨料對於拋光墊進行修整，使拋光墊的表面維持一定的粗糙度以保持拋光墊拋光之效率。Therefore, a CMP pad conditioner is required during the polishing process to continuously trim the surface of the polishing pad to maintain the surface roughness of the polishing pad and prolong the service life of the polishing pad. The current chemical mechanical polishing dresser comprises a substrate and a plurality of diamond abrasives, the substrate is in the shape of a disk and is made of stainless steel, the substrate has an upper surface, and the diamond abrasives are laid and fixed on the upper surface on average. The diamond abrasive is laid at least 50% of the area of the upper surface. The polishing pad is trimmed by the diamond abrasive of the current chemical mechanical polishing dresser to maintain a certain roughness of the surface of the polishing pad to maintain the polishing efficiency of the polishing pad.
然而，現行之化學機械研磨修整器在製作時需透過高溫加熱使得該等鑽石磨料能與該基板穩固地結合，但因基板與鑽石磨料兩者之熱膨脹係數不相同，因此高溫加熱後的形變量將不同，此將導致現行之化學機械研磨修整器的平坦度不佳，故即使該等鑽石磨料鋪設的面積佔該上表面之面積的50%，仍僅有部分鑽石磨料能夠真正用於修整拋光墊表面，如此將導致其他鑽石磨料無法被有效利用而造成浪費。However, the current chemical mechanical polishing dresser needs to be heated by high temperature to make the diamond abrasive firmly bond with the substrate, but the thermal expansion coefficient of the substrate and the diamond abrasive is different, so the deformation variable after high temperature heating Differently, this will result in poor flatness of the current chemical mechanical polishing dresser, so even if the area of the diamond abrasive is 50% of the area of the upper surface, only part of the diamond abrasive can be used for trimming and polishing. The surface of the mat will cause other diamond abrasives to be used effectively and waste.
本創作之目的係在於改善現行之化學機械研磨修整器的平坦度不佳所導致之部分鑽石磨料無法被有效利用的問題。The purpose of this creation is to improve the problem that some diamond abrasives cannot be effectively utilized due to the poor flatness of the current chemical mechanical polishing dresser.
本創作提供一種化學機械研磨修整器，其包含： 一基板，其具有一頂面； 複數研磨單元，其藉一結合層設於該基板，各研磨單元包含一研磨單元基板與一研磨層，該研磨單元基板設於該結合層相對於該基板之一面，且以該基板之頂面的面積為100%，該研磨單元基板覆蓋於該基板所佔之面積為5%至50%，該研磨層形成於該研磨單元基板相對於該結合層之一面並具有複數研磨尖端。The present invention provides a chemical mechanical polishing conditioner comprising: a substrate having a top surface; a plurality of polishing units disposed on the substrate by a bonding layer, each polishing unit comprising a polishing unit substrate and a polishing layer, The polishing unit substrate is disposed on the surface of the bonding layer with respect to the substrate, and the area of the top surface of the substrate is 100%, and the area of the polishing unit substrate covering the substrate is 5% to 50%, and the polishing layer Formed on the polishing unit substrate with respect to one side of the bonding layer and having a plurality of polishing tips.
本創作藉減少研磨單元基板覆蓋於該基板所佔之面積來降低高溫加熱過程中受到熱變形的影響，故各研磨尖端的高度一致性較高，藉此能提高用於修整拋光墊之研磨單元的比例。The present invention reduces the influence of thermal deformation during high-temperature heating by reducing the area occupied by the polishing unit substrate on the substrate, so that the height consistency of each polishing tip is high, thereby improving the polishing unit for dressing the polishing pad. proportion.
另擇的是，其中該基板更具有複數內凹部，該等內凹部內凹成型於該基板之頂面，各內凹部具有一底面；該結合層設於該底面，該等研磨單元分別設於該等內凹部中，該研磨單元基板設於該結合層相對於該底面之一面，該研磨層形成於該研磨單元基板相對於該結合層之一面並具有該等研磨尖端。透過該等內凹部可提供該等研磨單元更佳的固定效果。Alternatively, the substrate further has a plurality of concave portions, the inner concave portions are concavely formed on the top surface of the substrate, and each of the inner concave portions has a bottom surface; the bonding layer is disposed on the bottom surface, and the grinding units are respectively disposed on the bottom surface In the inner recesses, the polishing unit substrate is disposed on one surface of the bonding layer with respect to the bottom surface, and the polishing layer is formed on the polishing unit substrate with respect to one surface of the bonding layer and has the polishing tips. A better fixing effect of the grinding units can be provided through the inner recesses.
另擇的是，其中該基板更具有複數內凹部，該等內凹部貫穿成型於該基板之頂面；該化學機械研磨修整器更包含一底板，該底板具有一底板表面，該底板表面設於該基板並與該基板之頂面相對；該結合層設於該底板表面，該等研磨單元分別設於該等內凹部中，該研磨單元基板設於該結合層相對於該底板表面之一面，該研磨層形成於該研磨單元基板相對於該結合層之一面並具有該等研磨尖端。透過該等內凹部可提供該等研磨單元更佳的固定效果。Optionally, the substrate further has a plurality of inner recesses formed through the top surface of the substrate; the chemical mechanical polishing trimmer further comprises a bottom plate, the bottom plate having a bottom surface, wherein the bottom surface is disposed on the bottom surface The substrate is opposite to the top surface of the substrate; the bonding layer is disposed on the surface of the bottom plate, and the polishing units are respectively disposed in the inner concave portions, and the polishing unit substrate is disposed on a surface of the bonding layer opposite to the surface of the bottom plate. The polishing layer is formed on a surface of the polishing unit substrate opposite to the bonding layer and has the polishing tips. A better fixing effect of the grinding units can be provided through the inner recesses.
較佳的是，該研磨單元基板所佔之面積為5%至25%。Preferably, the area of the polishing unit substrate is 5% to 25%.
較佳的是，各研磨單元基板間係形成一內部空間，該內部空間可於修整時可將研磨液侷限於其中，藉此可減少修整時研磨液的流失，進而達到減少研磨液的用量的功效。Preferably, an internal space is formed between the polishing unit substrates, and the internal space can limit the polishing liquid during the trimming, thereby reducing the loss of the polishing liquid during the trimming process, thereby reducing the amount of the polishing liquid. efficacy.
較佳的是，其中各研磨單元基板由一長形片體所構成，各長形片體具有相對之兩端，該等長形片體之一端相接於該基板之中心的相對上方，該等長形片體之另一端則位於該基板之外緣的相對上方；更佳的是，該等長形片體中任兩相鄰的長形片體之夾角係相同。Preferably, each of the polishing unit substrates is formed by an elongated piece having opposite ends, and one end of the elongated pieces is opposite to the center of the substrate. The other end of the isometric sheet is located above the outer edge of the substrate; more preferably, the angle between any two adjacent elongated sheets of the elongate sheet is the same.
另擇的是，其中各研磨單元基板由一長形片體所構成，各長形片體具有相對之第一端及第二端，各長形片體之第一端係與該相連接之長形片體的第二端相接，該等長形片體相互串接而形成有一內部空間，該內部空間形成於該等長形片體之間；更佳的是，任兩相鄰之長形片體的連接處係位於該頂面的外緣的相對上方。本創作用於修整時可將研磨液侷限於該內部空間內，藉此可減少修整時研磨液的流失，進而達到減少研磨液的用量的功效。Alternatively, each of the polishing unit substrates is formed by an elongated body having opposite first and second ends, and the first ends of the elongated sheets are connected to the first end The second ends of the elongated sheets are joined together, and the elongated sheets are connected in series to form an internal space formed between the elongated sheets; more preferably, any two adjacent ones The junction of the elongate sheets is located above the outer edge of the top surface. The creation can be used to trim the polishing liquid to the inner space, thereby reducing the loss of the polishing liquid during the trimming process, thereby reducing the amount of the polishing liquid.
另擇的是，其中各研磨單元基板由一弧形片體所構成，該弧形片體具有相對之第一端及第二端，各弧形片體之第一端係與該相連接之弧形片體的第二端相接，該等弧形片體相互串接而形成有一內部空間，該內部空間形成於該等弧形片體之間。本創作用於修整時可將研磨液侷限於該內部空間內，藉此可減少修整時研磨液的流失，進而達到減少研磨液的用量的功效。Alternatively, each of the polishing unit substrates is formed by a curved body having opposite first and second ends, and the first ends of the curved bodies are connected to the first end The second ends of the curved sheets are joined together, and the curved sheets are connected in series to each other to form an internal space formed between the curved sheets. The creation can be used to trim the polishing liquid to the inner space, thereby reducing the loss of the polishing liquid during the trimming process, thereby reducing the amount of the polishing liquid.
另擇的是，其中各研磨單元基板由一弧形片體與兩長形片體所構成，各長形片體具有相對之第一端與第二端，該弧形片體之兩端分別與該等長形片體之第一端連接，各長型片體之第二端係與該相連接之長形片體的第二端相接，而該等研磨單元基板相互串接而形成有一內部空間，該內部空間形成於該等弧形片體與該等長形片體之間。本創作用於修整時可將研磨液侷限於該內部空間內，藉此可減少修整時研磨液的流失，進而達到減少研磨液的用量的功效。Alternatively, each of the polishing unit substrates is composed of an arc-shaped sheet body and two elongated sheets, and each of the elongated sheets has opposite first and second ends, and the two ends of the curved body are respectively Connected to the first ends of the elongated sheets, the second ends of the elongated sheets are in contact with the second ends of the connected elongated sheets, and the polishing unit substrates are connected in series to form There is an internal space formed between the arcuate sheets and the elongate sheets. The creation can be used to trim the polishing liquid to the inner space, thereby reducing the loss of the polishing liquid during the trimming process, thereby reducing the amount of the polishing liquid.
另擇的是，其中該等研磨單元基板沿該基板的外緣間隔環狀排列，各研磨單元基板呈多邊形、圓形或橢圓形。Alternatively, the polishing unit substrates are circumferentially arranged along the outer edge of the substrate, and each of the polishing unit substrates has a polygonal shape, a circular shape or an elliptical shape.
較佳的是，其中該基板為不銹鋼基板、模具鋼基板、金屬合金基板、陶瓷基板或塑膠基板或其組合。Preferably, the substrate is a stainless steel substrate, a mold steel substrate, a metal alloy substrate, a ceramic substrate or a plastic substrate or a combination thereof.
較佳的是，其中該基板之厚度為2毫米至30毫米；更佳的是，該基板之厚度為4毫米至6毫米。Preferably, the substrate has a thickness of from 2 mm to 30 mm; more preferably, the substrate has a thickness of from 4 mm to 6 mm.
較佳的是，其中該結合層之材料包含陶瓷材料、硬焊材料、電鍍材料或高分子材料；更佳的是，硬焊材料包含鐵、鈷、鉻、錳、矽、鋁或其組合；高分子材料包含環氧樹脂、聚酯樹脂、聚丙烯酸樹脂或酚醛樹脂。Preferably, the material of the bonding layer comprises a ceramic material, a brazing material, a plating material or a polymer material; more preferably, the brazing material comprises iron, cobalt, chromium, manganese, lanthanum, aluminum or a combination thereof; The polymer material contains an epoxy resin, a polyester resin, a polyacrylic resin or a phenol resin.
較佳的是，其中該研磨單元基板為導電性基板或絕緣性基板；更佳的是，其中導電性基板之材料包含鉬、鎢或碳化鎢；其中絕緣性基板之材料包含陶瓷材料或單晶材料；更佳的是，其中陶瓷材料包含碳化矽，單晶材料包含矽、氧化鋁或藍寶石。Preferably, the substrate of the polishing unit is a conductive substrate or an insulating substrate; more preferably, the material of the conductive substrate comprises molybdenum, tungsten or tungsten carbide; wherein the material of the insulating substrate comprises a ceramic material or a single crystal More preferably, the ceramic material comprises tantalum carbide and the single crystal material comprises tantalum, alumina or sapphire.
較佳的是，該導電性基板相對於該結合層之一面係利用放電加工形成複數個表面尖端之圖案化表面，該研磨層再透過化學氣相沉積法沉積於該圖案化表面並形成該等研磨尖端。Preferably, the conductive substrate forms a patterned surface of a plurality of surface tips by electrical discharge machining with respect to one surface of the bonding layer, and the polishing layer is further deposited on the patterned surface by chemical vapor deposition and forms the same. Grinding the tip.
較佳的是，該絕緣性基板係利用機械研磨或雷射加工等方式形成複數個表面尖端之圖案化表面，該研磨層再透過化學氣相沉積法沉積於該圖案化表面並形成該等研磨尖端。Preferably, the insulating substrate forms a patterned surface of a plurality of surface tips by mechanical polishing or laser processing, and the polishing layer is deposited on the patterned surface by chemical vapor deposition and forms the polishing. Cutting edge.
較佳的是，該研磨單元基板具有一平坦之表面，該研磨層透過化學氣相沉積法沉積於該平坦之表面並形成該等研磨尖端。Preferably, the polishing unit substrate has a flat surface, and the polishing layer is deposited on the flat surface by chemical vapor deposition and forms the polishing tips.
較佳的是，該研磨層之組成材料可為單晶鑽石或多晶鑽石，且該研磨層係透過陶瓷燒結法、金屬硬焊法、電鍍法、金屬燒結法或高分子硬化法形成固定於該研磨單元基板相對於該結合層之一面。Preferably, the material of the polishing layer may be a single crystal diamond or a polycrystalline diamond, and the polishing layer is fixed by a ceramic sintering method, a metal brazing method, a plating method, a metal sintering method or a polymer hardening method. The polishing unit substrate is opposite to one side of the bonding layer.
較佳的是，其中研磨單元的厚度為1毫米至8毫米；更佳的是，研磨單元的厚度為3毫米至6毫米。Preferably, the thickness of the grinding unit is from 1 mm to 8 mm; more preferably, the thickness of the grinding unit is from 3 mm to 6 mm.
較佳的是，其中該研磨尖端的外形為刀刃狀、圓錐狀、圓弧狀、圓柱狀、角錐狀或角柱狀；更佳的是，角柱狀為四角柱狀。Preferably, the shape of the polishing tip is a blade shape, a cone shape, an arc shape, a column shape, a pyramid shape or a corner column shape; more preferably, the angle column shape is a quadrangular column shape.
較佳的是，其中該研磨尖端的尖端角度為60度至120度；更佳的是，其中該研磨尖端的尖端角度為60度、90度或120度。Preferably, the tip end angle of the grinding tip is 60 degrees to 120 degrees; more preferably, the tip angle of the grinding tip is 60 degrees, 90 degrees or 120 degrees.
較佳的是，其中該研磨層相對於該研磨單元基板之一面更形成一陶瓷膜或一鑽石膜。Preferably, the polishing layer forms a ceramic film or a diamond film with respect to one side of the polishing unit substrate.
第一實施例First embodiment
如圖1、圖2所示，本創作之第一實施例係提供一種化學機械研磨修整器1，其包含：一基板10、一結合層20、三研磨單元30，該基板10呈圓盤狀且其材料為不銹鋼，該基板10之厚度為6毫米，該基板10具有一頂面；該結合層20設於該基板10之頂面與該研磨單元30之間，藉該結合層20使該研磨單元30固設於該基板10之頂面，該結合層20之材料包含硬焊材料，硬焊材料為鐵。As shown in FIG. 1 and FIG. 2, the first embodiment of the present invention provides a chemical mechanical polishing conditioner 1 comprising: a substrate 10, a bonding layer 20, and a third polishing unit 30. The substrate 10 has a disk shape. The material of the substrate is 6 mm. The substrate 10 has a thickness of 6 mm. The substrate 10 has a top surface. The bonding layer 20 is disposed between the top surface of the substrate 10 and the polishing unit 30. The polishing unit 30 is fixed on the top surface of the substrate 10. The material of the bonding layer 20 comprises a brazing material, and the brazing material is iron.
各研磨單元30包含一研磨單元基板31與一研磨層32，該等研磨單元基板31設於該結合層20相對於該基板10之一面，各研磨單元基板31之外形呈長條形，各研磨單元基板31由一長形片體所構成，各長形片體具有相對之兩端，該等長形片體之一端相接於該頂面之中心的相對上方，該等長形片體之另一端則位於該頂面之外緣的相對上方，且該等長形片體中任兩相鄰的長形片體之夾角A係相同，而以該基板10之頂面的面積為100%，該研磨單元基板31覆蓋於該基板10所佔之面積為19%。Each polishing unit 30 includes a polishing unit substrate 31 and a polishing layer 32. The polishing unit substrate 31 is disposed on one surface of the bonding layer 20 with respect to the substrate 10, and each of the polishing unit substrates 31 has an elongated shape. The unit substrate 31 is formed by an elongated sheet body, and each of the elongated sheets has opposite ends, and one end of the elongated sheets is opposite to the center of the top surface, and the elongated sheets are The other end is located above the outer edge of the top surface, and the angle A of any two adjacent elongated sheets in the elongated sheet is the same, and the area of the top surface of the substrate 10 is 100%. The area occupied by the polishing unit substrate 31 covering the substrate 10 is 19%.
各研磨單元基板31為一導電性基板，該研磨單元基板31之材料為碳化鎢，且該研磨單元基板31相對於該結合層20之一面係利用放電加工形成複數個表面尖端之圖案化表面，該研磨層32再透過化學氣相沉積法沉積於該圖案化表面並形成複數個研磨尖端321，該研磨層32由多晶鑽石構成，且多晶鑽石之結晶尺寸為15奈米，各研磨尖端321的外形為角錐狀且各研磨尖端321的尖端角度為60度；該研磨單元30之厚度d1為3毫米，所述之研磨單元30之厚度d1為研磨尖端321的頂端至研磨單元基板31相對於該研磨層32之一面的最短距離。Each of the polishing unit substrates 31 is a conductive substrate, and the material of the polishing unit substrate 31 is tungsten carbide, and the polishing unit substrate 31 forms a patterned surface of a plurality of surface tips by electric discharge machining on one surface of the bonding layer 20 . The polishing layer 32 is further deposited on the patterned surface by chemical vapor deposition and forms a plurality of polishing tips 321 composed of polycrystalline diamonds, and the crystal size of the polycrystalline diamond is 15 nm, and each polishing tip The shape of the 321 is pyramidal and the tip angle of each of the polishing tips 321 is 60 degrees; the thickness d1 of the polishing unit 30 is 3 mm, and the thickness d1 of the polishing unit 30 is the tip of the polishing tip 321 to the polishing unit substrate 31. The shortest distance on one side of the abrasive layer 32.
本創作第一實施例之化學機械研磨修整器1中該研磨單元基板31覆蓋於該基板10所佔之面積僅為該頂面之面積的19%，在高溫加熱的過程中受到熱變形的影響相對較小，故各研磨尖端321的高度一致性較高，藉此能提高用於修整拋光墊之研磨單元30的比例，換言之，即係提高研磨單元30的利用比例。另需特別說明的是，該化學機械研磨修整器1中該研磨單元基板31覆蓋於該基板10所佔之面積雖僅為該頂面之面積的19%，換言之，該化學機械研磨修整器1能用於修整拋光墊的面積(即修整面積)僅為該頂面面積的19%，但因該等研磨單元基板31之兩端分別設置於該頂面之中心的相對上方以及該頂面之外緣的相對上方，意即，該等研磨單元基板31沿該頂面的半徑設置，故於實際使用該化學機械研磨修整器1時，透過旋轉該化學機械研磨修整器1即可達到相當於該頂面的面積100%之修整面積。第二實施例 In the chemical mechanical polishing conditioner 1 of the first embodiment of the present invention, the area of the polishing unit substrate 31 covered by the substrate 10 is only 19% of the area of the top surface, and is affected by thermal deformation during high-temperature heating. The relative height of each of the polishing tips 321 is relatively small, whereby the proportion of the polishing unit 30 for conditioning the polishing pad can be increased, in other words, the utilization ratio of the polishing unit 30 can be increased. In addition, in the chemical mechanical polishing dresser 1, the area occupied by the polishing unit substrate 31 covering the substrate 10 is only 19% of the area of the top surface, in other words, the chemical mechanical polishing dresser 1 The area that can be used to trim the polishing pad (ie, the trimming area) is only 19% of the area of the top surface, but since both ends of the polishing unit substrate 31 are respectively disposed above the center of the top surface and the top surface The upper side of the outer edge means that the polishing unit substrate 31 is disposed along the radius of the top surface. Therefore, when the chemical mechanical polishing dresser 1 is actually used, the chemical mechanical polishing dresser 1 can be rotated to achieve the equivalent. The top surface has a 100% trim area. Second embodiment
如圖3所示，本創作第二實施例之化學機械研磨修整器1A係與第一實施例之化學機械研磨修整器1大致相同，其不同之處在於基板之構成及基板之厚度、結合層之構成、研磨單元之數量及厚度和研磨單元基板31A之設置、構成以及研磨單元基板31A覆蓋於該基板所佔之面積。該基板之材料為陶瓷材料，且該基板之厚度為10毫米；該結合層之材料為環氧樹脂；該等研磨單元之數量為6個，各研磨單元之厚度為5毫米，各研磨單元基板31A為一絕緣性基板，各研磨單元基板31A之材料為碳化矽，該研磨單元基板31A具有一平坦之表面，該研磨層透過化學氣相沉積法沉積於該平坦之表面並形成複數個研磨尖端321A；該研磨單元基板31A覆蓋於該基板所佔之面積為28%，各研磨單元基板31A呈長條形並由一長形片體所構成，各長形片體具有相對之第一端及第二端，各長形片體之第一端係與該相連接之長形片體的第二端相接，該等長形片體沿該頂面之外緣的方向相互串接成型而形成有一內部空間33A，且任兩相鄰之長形片體的連接處係位於該頂面的外緣的相對上方，該內部空間33A形成於該等長形片體之間，換言之，該等研磨單元基板31A之設置係呈縷空六邊形。As shown in FIG. 3, the chemical mechanical polishing conditioner 1A of the second embodiment of the present invention is substantially the same as the chemical mechanical polishing conditioner 1 of the first embodiment, and is different in the structure of the substrate and the thickness of the substrate, and the bonding layer. The configuration, the number and thickness of the polishing units, and the arrangement and configuration of the polishing unit substrate 31A and the area occupied by the polishing unit substrate 31A cover the substrate. The material of the substrate is a ceramic material, and the thickness of the substrate is 10 mm; the material of the bonding layer is epoxy resin; the number of the polishing units is six, and the thickness of each polishing unit is 5 mm, and each polishing unit substrate 31A is an insulating substrate, and the material of each of the polishing unit substrates 31A is tantalum carbide, and the polishing unit substrate 31A has a flat surface, and the polishing layer is deposited on the flat surface by chemical vapor deposition to form a plurality of polishing tips. 321A; the area of the polishing unit substrate 31A covering the substrate is 28%, and each of the polishing unit substrates 31A has an elongated shape and is formed by an elongated piece, and each of the elongated pieces has a first end and The second end of each of the elongated sheets is connected to the second end of the connected elongated sheet, and the elongated sheets are formed in series with each other along the outer edge of the top surface. An inner space 33A is formed, and a joint of any two adjacent elongated sheets is located above the outer edge of the top surface, and the inner space 33A is formed between the elongated sheets, in other words, The setting of the polishing unit substrate 31A is Empty hexagons.
本創作第二實施例之化學機械研磨修整器1A中該研磨單元基板31A覆蓋於該基板所佔之面積僅為該頂面之面積的28%，在高溫加熱的過程中受到熱變形的影響相對較小，故各研磨尖端321A的高度一致性較高，藉此能提高用於修整拋光墊之研磨單元的比例；且雖該研磨單元基板31A相對於頂面所佔之面積僅為28%，但因任兩相鄰之研磨單元基板31A的連接處係位於該頂面的外緣的相對上方，故於實際使用該化學機械研磨修整器1A時，透過旋轉該化學機械研磨修整器1A即可達到相當於該頂面的面積100%之修整面積；又本創作第二實施例之化學機械研磨修整器1A使用時可將研磨液侷限於該內部空間33A內，藉此可減少修整時研磨液的流失，進而達到減少研磨液的用量的功效。第三實施例 In the chemical mechanical polishing dresser 1A of the second embodiment of the present invention, the area covered by the polishing unit substrate 31A covering the substrate is only 28% of the area of the top surface, and is affected by thermal deformation during high-temperature heating. Smaller, the height consistency of each of the polishing tips 321A is higher, thereby increasing the proportion of the polishing unit for conditioning the polishing pad; and although the area of the polishing unit substrate 31A with respect to the top surface is only 28%, However, since the connection between the two adjacent polishing unit substrates 31A is located above the outer edge of the top surface, when the chemical mechanical polishing conditioner 1A is actually used, the chemical mechanical polishing conditioner 1A can be rotated. A finishing area corresponding to 100% of the area of the top surface is achieved; and the chemical mechanical polishing dresser 1A of the second embodiment of the present invention can limit the polishing liquid to the internal space 33A, thereby reducing the polishing liquid during trimming. The loss, and thus the effect of reducing the amount of the slurry. Third embodiment
如圖4所示，本創作第三實施例之化學機械研磨修整器1B係與第二實施例之化學機械研磨修整器1A大致相同，其不同之處在於研磨單元之數量、研磨單元基板31B之設置以及研磨單元基板31B覆蓋於該基板所佔之面積。該等研磨單元之數量為8個，該等研磨單元基板31B覆蓋於該基板所佔之面積為20%；而各研磨單元基板31B由一弧形片體所構成，該弧形片體具有相對之第一端及第二端，各弧形片體之第一端係與該相連接之弧形片體的第二端相接，該等弧形片體沿該頂面之外緣的方向相互串接而形成有一內部空間33B，該內部空間33B形成於該等弧形片體之間，換言之，該等研磨單元基板31B之設置係呈縷空花瓣形；而該研磨層上更具有鍍有一陶瓷膜，該陶瓷膜形成於該研磨層相對於該研磨單元基板31B之一面。As shown in FIG. 4, the chemical mechanical polishing conditioner 1B of the third embodiment of the present invention is substantially the same as the chemical mechanical polishing conditioner 1A of the second embodiment, except that the number of the polishing units and the polishing unit substrate 31B are the same. The setting and the polishing unit substrate 31B cover the area occupied by the substrate. The number of the polishing units is eight, and the area of the polishing unit substrate 31B covering the substrate is 20%; and each of the polishing unit substrates 31B is formed by an arc-shaped sheet having relative The first end and the second end, the first end of each curved piece is connected to the second end of the connected curved piece, and the curved piece is in the direction of the outer edge of the top surface An internal space 33B is formed in series with each other, and the internal space 33B is formed between the curved sheets. In other words, the grinding unit substrates 31B are arranged in a hollow petal shape; and the polishing layer is further plated. There is a ceramic film formed on one surface of the polishing layer with respect to the polishing unit substrate 31B.
本創作第三實施例之化學機械研磨修整器1B同樣藉減少研磨單元基板31B覆蓋於該基板所佔之面積來降低高溫加熱過程中受到熱變形的影響，且藉該內部空間33B使該化學機械研磨修整器1B使用時減少修整時研磨液的流失，進而達到減少研磨液的用量的功效。第四實施例 The chemical mechanical polishing dresser 1B of the third embodiment of the present invention also reduces the influence of thermal deformation during high-temperature heating by reducing the area occupied by the polishing unit substrate 31B over the substrate, and the chemical mechanical mechanism is utilized by the internal space 33B. When the polishing dresser 1B is used, the loss of the polishing liquid during trimming is reduced, thereby achieving the effect of reducing the amount of the polishing liquid. Fourth embodiment
如圖5所示，本創作第四實施例之化學機械研磨修整器1C係與第三實施例之化學機械研磨修整器1B大致相同，其不同之處在於研磨單元之數量、研磨單元基板31C之設置以及研磨單元基板31C覆蓋於該基板所佔之面積。該等研磨單元之數量為4個，該等研磨單元基板31C覆蓋於該基板所佔之面積為30%；而各研磨單元基板31C呈馬蹄形並由一弧形片體與兩長形片體所構成，各長形片體具有相對之第一端與第二端，該弧形片體之兩端分別與該等長形片體之第一端連接，各長型片體之第二端係與該相連接之長形片體的第二端相接，而該等研磨單元基板31C相互串接而形成有一內部空間33C，該內部空間33C形成於該等弧形片體與該等長形片體之間，換言之，該等研磨單元基板31C之設置係呈縷空十字形；而該研磨層上更具有鍍有一鑽石膜，該鑽石膜形成於該研磨層相對於該研磨單元基板31C之一面。As shown in FIG. 5, the chemical mechanical polishing conditioner 1C of the fourth embodiment of the present invention is substantially the same as the chemical mechanical polishing conditioner 1B of the third embodiment, except that the number of the polishing units and the polishing unit substrate 31C are The setting and the polishing unit substrate 31C cover the area occupied by the substrate. The number of the polishing units is four, and the area of the polishing unit substrate 31C covering the substrate is 30%; and each of the polishing unit substrates 31C has a horseshoe shape and is composed of a curved piece and two elongated pieces. The first length and the second end are opposite to each other, and the two ends of the curved piece are respectively connected with the first ends of the elongated pieces, and the second ends of the long pieces are respectively A second end of the elongated elongated body is connected, and the polishing unit substrates 31C are connected in series to each other to form an internal space 33C formed in the curved body and the elongated shape. Between the sheets, in other words, the grinding unit substrates 31C are arranged in a hollow cross shape; and the polishing layer is further provided with a diamond film formed on the polishing layer relative to the polishing unit substrate 31C. one side.
本創作第四實施例之化學機械研磨修整器1C同樣藉減少研磨單元基板31C覆蓋於該基板所佔之面積來降低高溫加熱過程中受到熱變形的影響，且藉該內部空間33C使該化學機械研磨修整器1C使用時減少修整時研磨液的流失，進而達到減少研磨液的用量的功效。第五實施例 The chemical mechanical polishing conditioner 1C of the fourth embodiment of the present invention also reduces the influence of thermal deformation during high-temperature heating by reducing the area occupied by the polishing unit substrate 31C over the substrate, and the chemical mechanical mechanism is utilized by the internal space 33C. When the polishing dresser 1C is used, the loss of the polishing liquid during trimming is reduced, thereby achieving the effect of reducing the amount of the polishing liquid. Fifth embodiment
如圖6、圖7所示，本創作第五實施例之化學機械研磨修整器1D係與第一實施例之化學機械研磨修整器1大致相同，其不同之處在研磨單元30D之數量、研磨單元基板31D之設置及研磨單元基板31D覆蓋於該基板所佔之面積和研磨尖端321D之外形與尖端角度。該化學機械研磨修整器1D包含6個研磨單元30D，各研磨單元30D包含一研磨單元基板31D與一研磨層32D，各研磨單元基板31D設於該結合層20D相對於該基板10D之一面，該等研磨單元基板31D係沿該頂面的外緣間隔環狀排列，並以該基板10D之頂面的面積為100%，該等研磨單元基板31D覆蓋於該基板所佔之面積為10%，各研磨單元基板31D呈四邊形，且各研磨單元基板31D之中心至該頂面之中心的直線距離均不相等，該研磨層32D形成於研磨單元基板31D相對於該結合層20D之一面並具有複數個研磨尖端321D，各研磨尖端321D的外形為四角柱狀且各研磨尖端321D的尖端角度為90度。As shown in FIG. 6 and FIG. 7, the chemical mechanical polishing conditioner 1D of the fifth embodiment of the present invention is substantially the same as the chemical mechanical polishing conditioner 1 of the first embodiment, and the difference is in the number of the polishing unit 30D, and grinding. The arrangement of the unit substrate 31D and the polishing unit substrate 31D cover the area occupied by the substrate and the angle of the tip end of the polishing tip 321D. The chemical mechanical polishing dresser 1D includes six polishing units 30D. Each polishing unit 30D includes a polishing unit substrate 31D and a polishing layer 32D. Each polishing unit substrate 31D is disposed on one side of the bonding layer 20D with respect to the substrate 10D. The polishing unit substrate 31D is annularly arranged along the outer edge of the top surface, and the area of the top surface of the substrate 10D is 100%, and the area occupied by the polishing unit substrate 31D over the substrate is 10%. Each of the polishing unit substrates 31D has a quadrangular shape, and the linear distances from the center of each polishing unit substrate 31D to the center of the top surface are not equal. The polishing layer 32D is formed on one surface of the polishing unit substrate 31D with respect to the bonding layer 20D and has a plurality of Each of the polishing tips 321D has a quadrangular prism shape and the tip end angle of each of the polishing tips 321D is 90 degrees.
本創作第五實施例之化學機械研磨修整器1D同樣藉減少研磨單元基板31D覆蓋於該基板所佔之面積來降低高溫加熱過程中受到熱變形的影響，且因各研磨單元基板31D之中心至該頂面之中心的直線距離均不相等，故可避免旋轉該化學機械研磨修整器1D進行修整時產生陰影效應(shadow effect)；而各研磨尖端321D的外形為四角柱狀係相較於圓錐狀容易加工，且配合呈四邊形之各研磨單元基板31D相較於呈弧形之研磨單元基板更能確保位於研磨單元基板31D邊緣之研磨尖端321D的外形是完整的。第六實施例 The chemical mechanical polishing conditioner 1D of the fifth embodiment of the present invention also reduces the influence of thermal deformation during high-temperature heating by reducing the area occupied by the polishing unit substrate 31D over the substrate, and the center of each polishing unit substrate 31D is The straight line distances of the center of the top surface are not equal, so that the shadow effect can be avoided when the chemical mechanical polishing dresser 1D is rotated for trimming; and the shape of each grinding tip 321D is a quadrangular column type compared to the cone. The shape is easy to process, and each of the polishing unit substrates 31D in the form of a quadrilateral can ensure that the outer shape of the polishing tip 321D located at the edge of the polishing unit substrate 31D is intact as compared with the curved polishing unit substrate. Sixth embodiment
如圖8所示，本創作第六實施例之化學機械研磨修整器1E係與第五實施例之化學機械研磨修整器1D大致相同，其不同之處在研磨單元之數量、研磨單元基板31E之設置及研磨單元基板31E覆蓋於該基板所佔之面積。該化學機械研磨修整器1E中研磨單元的數量為4個；該等研磨單元基板31E所佔之面積為18%，各研磨單元基板31E呈三角形，各研磨尖端321E的外形為三角柱狀，且各研磨單元基板31E之中心至該頂面之中心的直線距離均不相等。As shown in FIG. 8, the chemical mechanical polishing conditioner 1E of the sixth embodiment of the present invention is substantially the same as the chemical mechanical polishing conditioner 1D of the fifth embodiment, and the difference is in the number of polishing units, and the polishing unit substrate 31E. The setting and polishing unit substrate 31E covers the area occupied by the substrate. The number of polishing units in the chemical mechanical polishing conditioner 1E is four; the area occupied by the polishing unit substrates 31E is 18%, each polishing unit substrate 31E has a triangular shape, and the shape of each polishing tip 321E is triangular prism shape, and each The linear distance from the center of the polishing unit substrate 31E to the center of the top surface is not equal.
本創作第六實施例之化學機械研磨修整器1E同樣藉減少研磨單元基板31E覆蓋於該基板所佔之面積來降低高溫加熱過程中受到熱變形的影響，且因各研磨單元基板31E之中心至該頂面之中心的直線距離均不相等，故可避免旋轉該化學機械研磨修整器1E進行修整時產生陰影效應；呈三角形之各研磨單元基板31E相較於呈弧形之研磨單元基板更能確保位於研磨單元基板31E邊緣之研磨尖端的外形是完整的。第七實施例 The chemical mechanical polishing conditioner 1E of the sixth embodiment of the present invention also reduces the influence of thermal deformation during high-temperature heating by reducing the area occupied by the polishing unit substrate 31E over the substrate, and the center of each polishing unit substrate 31E is The straight line distances of the center of the top surface are not equal, so that the shadow effect can be avoided when the chemical mechanical polishing dresser 1E is rotated for trimming; each of the grinding unit substrates 31E having a triangular shape is more capable than the curved grinding unit substrate. It is ensured that the shape of the grinding tip located at the edge of the grinding unit substrate 31E is intact. Seventh embodiment
如圖9所示，本創作第七實施例之化學機械研磨修整器1F係與第五實施例之化學機械研磨修整器1D大致相同，其不同之處在於，該基板10F更具有複數內凹部11F，該等內凹部11F內凹成型於該基板10F之頂面，各內凹部11F具有一底面111F，該結合層20F設於該底面111F，該等研磨單元30F分別設於該等內凹部11F中，該研磨單元基板31F設於該結合層20F相對於該底面111F之一面，該研磨層32F形成於該研磨單元基板31F上並具有該等研磨尖端321F。As shown in FIG. 9, the chemical mechanical polishing conditioner 1F of the seventh embodiment of the present invention is substantially the same as the chemical mechanical polishing conditioner 1D of the fifth embodiment, except that the substrate 10F further has a plurality of concave portions 11F. The inner concave portion 11F is concavely formed on the top surface of the substrate 10F, and each inner concave portion 11F has a bottom surface 111F. The bonding layer 20F is disposed on the bottom surface 111F. The polishing units 30F are respectively disposed in the inner concave portions 11F. The polishing unit substrate 31F is disposed on one surface of the bonding layer 20F with respect to the bottom surface 111F. The polishing layer 32F is formed on the polishing unit substrate 31F and has the polishing tips 321F.
本創作第七實施例之化學機械研磨修整器1F相較於第五實施例之化學機械研磨修整器1D透過該等內凹部11F可提供該等研磨單元30F更佳的固定效果。第八實施例 The chemical mechanical polishing dresser 1F of the seventh embodiment of the present invention provides a better fixing effect of the polishing unit 30F through the inner concave portions 11F than the chemical mechanical polishing dresser 1D of the fifth embodiment. Eighth embodiment
如圖10所示，本創作第八實施例之化學機械研磨修整器1G係與第五實施例之化學機械研磨修整器1D大致相同，其不同之處在於，該基板10G更具有複數內凹部11G，該等內凹部11G貫穿成型於該基板10G之頂面；該化學機械研磨修整器1G更包含一底板40G，該底板40G具有一底板表面41G，該底板表面41G貼設於該基板10G並與該基板10G之頂面相對，於本實施例中，該底板41G係透過複數螺絲50G鎖固於該基板10G上；該結合層20G設於該底板表面41G，該等研磨單元30G分別設於該等內凹部11G中，該研磨單元基板31G設於該結合層20G相對於該底板表面41G之一面，該研磨層32G形成於該研磨單元基板31G上並具有該等研磨尖端321G。As shown in FIG. 10, the chemical mechanical polishing conditioner 1G of the eighth embodiment of the present invention is substantially the same as the chemical mechanical polishing conditioner 1D of the fifth embodiment, except that the substrate 10G further has a plurality of concave portions 11G. The embossed portion 11G is formed on the top surface of the substrate 10G. The CMP device 1G further includes a bottom plate 40G having a bottom surface 41G. The bottom surface 41G is attached to the substrate 10G and The bottom surface of the substrate 10G is opposite to each other. In the embodiment, the bottom plate 41G is fixed to the substrate 10G through a plurality of screws 50G. The bonding layer 20G is disposed on the bottom surface 41G, and the polishing units 30G are respectively disposed on the substrate In the inner concave portion 11G, the polishing unit substrate 31G is provided on one surface of the bonding layer 20G with respect to the bottom surface 41G, and the polishing layer 32G is formed on the polishing unit substrate 31G and has the polishing tips 321G.
本創作第八實施例之化學機械研磨修整器1G相較於第五實施例之化學機械研磨修整器1D透過該等內凹部11G可提供該等研磨單元30G更佳的固定效果。The chemical mechanical polishing dresser 1G of the eighth embodiment of the present invention provides a better fixing effect of the polishing unit 30G than the chemical mechanical polishing dresser 1D of the fifth embodiment through the inner concave portions 11G.
以上所述僅為說明本創作的例示，並非對本創作做任何形式上的限制，本創作所主張之權利範圍自應以申請專利範圍所述為準，而非僅限於上述實施例。任何所屬技術領域中具有通常知識者，在不脫離本創作技術方案的範圍內，當可利用上述揭示的技術內容做出些許更動或修飾為等同變化的等效實施例，但凡是未脫離本創作之技術方案的內容，依據本創作的技術實質對以上實施例作任何簡單修改、等同變化與修改，均仍屬於本創作技術方案的範圍內。The above description is only illustrative of the present invention, and is not intended to limit the scope of the present invention. The scope of the present invention is defined by the scope of the patent application, and is not limited to the above embodiments. Any equivalents of the above-disclosed technical contents may be modified or modified to equivalent variations, without departing from the scope of the present invention. The content of the technical solution, any simple modification, equivalent change and modification of the above embodiment according to the technical essence of the present invention are still within the scope of the technical solution of the present invention.
1、1A、1B、1C、1D、1E、1F、1G‧‧‧化學機械研磨修整器
10、10D、10F、10G‧‧‧基板
11F、11G‧‧‧內凹部
111F‧‧‧底面
20、20D、20F、20G‧‧‧結合層
30、30D、30F、30G‧‧‧研磨單元
31、31A、31B、31C、31D、31E、31F、31G‧‧‧研磨單元基板
32、32D、32F、32G‧‧‧研磨層
321、321A、321D、321E、321F、321G‧‧‧研磨尖端
33A、33B、33C‧‧‧內部空間
40G‧‧‧底板
41G‧‧‧底板表面
50G‧‧‧螺絲
A‧‧‧夾角
d1‧‧‧厚度1, 1A, 1B, 1C, 1D, 1E, 1F, 1G‧‧‧ chemical mechanical polishing dresser
10, 10D, 10F, 10G‧‧‧ substrates
11F, 11G‧‧‧ recess
111F‧‧‧ bottom
20, 20D, 20F, 20G‧‧‧ bonding layer
30, 30D, 30F, 30G‧‧‧ grinding unit
31, 31A, 31B, 31C, 31D, 31E, 31F, 31G‧‧‧ grinding unit substrate
32, 32D, 32F, 32G‧‧‧ grinding layer
321, 321A, 321D, 321E, 321F, 321G‧‧‧ grinding tips
33A, 33B, 33C‧‧‧ internal space
40G‧‧‧ bottom plate
41G‧‧‧ floor surface
50G‧‧‧screw
A‧‧‧ angle
D1‧‧‧ thickness
圖1為本創作第一實施例之外觀圖。 圖2為本創作第一實施例之外觀局部放大圖。 圖3為本創作第二實施例之俯視圖。 圖4為本創作第三實施例之俯視圖。 圖5為本創作第四實施例之俯視圖。 圖6為本創作第五實施例之外觀圖。 圖7為本創作第五實施例之外觀局部放大圖。 圖8為本創作第六實施例之俯視圖。 圖9為本創作第七實施例之斷面圖。 圖10為本創作第八實施例之斷面圖。Fig. 1 is an external view of the first embodiment of the creation. Fig. 2 is a partially enlarged view showing the appearance of the first embodiment of the creation. Figure 3 is a plan view of a second embodiment of the creation. Figure 4 is a plan view of a third embodiment of the creation. Figure 5 is a plan view of a fourth embodiment of the present invention. Fig. 6 is an external view of the fifth embodiment of the creation. Fig. 7 is a partially enlarged view showing the appearance of the fifth embodiment of the present invention. Figure 8 is a plan view of a sixth embodiment of the present invention. Figure 9 is a cross-sectional view showing a seventh embodiment of the creation. Figure 10 is a cross-sectional view showing the eighth embodiment of the present invention.
1‧‧‧化學機械研磨修整器 1‧‧‧Chemical mechanical polishing dresser
10‧‧‧基板 10‧‧‧Substrate
20‧‧‧結合層 20‧‧‧bonding layer
30‧‧‧研磨單元 30‧‧‧grinding unit
31‧‧‧研磨單元基板 31‧‧‧ Grinding unit substrate
32‧‧‧研磨層 32‧‧‧Abrasive layer
321‧‧‧研磨尖端 321‧‧‧ Grinding tip
A‧‧‧夾角 A‧‧‧ angle
Claims (26)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104208835U TWM510214U (en) | 2015-06-03 | 2015-06-03 | Chemical mechanical polishing pad dresser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104208835U TWM510214U (en) | 2015-06-03 | 2015-06-03 | Chemical mechanical polishing pad dresser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWM510214U true TWM510214U (en) | 2015-10-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104208835U TWM510214U (en) | 2015-06-03 | 2015-06-03 | Chemical mechanical polishing pad dresser |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWM510214U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10173297B2 (en) | 2016-08-01 | 2019-01-08 | Kinik Company Ltd. | Chemical mechanical polishing conditioner and method for manufacturing same |
| TWI706831B (en) * | 2020-02-10 | 2020-10-11 | 富仕多科技有限公司 | Base seat used in polishing pad conditioning apparatus |
-
2015
- 2015-06-03 TW TW104208835U patent/TWM510214U/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10173297B2 (en) | 2016-08-01 | 2019-01-08 | Kinik Company Ltd. | Chemical mechanical polishing conditioner and method for manufacturing same |
| TWI706831B (en) * | 2020-02-10 | 2020-10-11 | 富仕多科技有限公司 | Base seat used in polishing pad conditioning apparatus |
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