TWI706831B - Base seat used in polishing pad conditioning apparatus - Google Patents
Base seat used in polishing pad conditioning apparatus Download PDFInfo
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- TWI706831B TWI706831B TW109104048A TW109104048A TWI706831B TW I706831 B TWI706831 B TW I706831B TW 109104048 A TW109104048 A TW 109104048A TW 109104048 A TW109104048 A TW 109104048A TW I706831 B TWI706831 B TW I706831B
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本發明關於一種用於研磨墊整修裝置之基座,研磨墊整修裝置的扁平環狀修整元件係能套合且接合於基座的環狀溝槽內,並且特別是關於一種用於研磨墊整修裝置之基座且在研磨墊整修裝置於化學機械研磨製程中無金屬溶出的基座。 The present invention relates to a base for a polishing pad dressing device. The flat ring-shaped dressing element of the polishing pad dressing device can be sleeved and joined in the annular groove of the base, and particularly relates to a polishing pad dressing device The base of the device and the base where no metal is eluted during the chemical mechanical polishing process of the polishing pad reconditioning device.
請參閱圖1及圖2,該等圖式示意地描繪先前技術用於研磨墊整修裝置之基座1。圖1係先前技術之基座1的頂視圖。圖2係圖1中先前技術之基座1沿A-A線的剖面視圖。研磨墊整修裝置包含扁平環狀修整元件(未繪示於圖1及圖2)。
Please refer to FIGS. 1 and 2, which schematically depict the
如圖1及圖2所示,先前技術之基座1具有上表面10、下表面11、形成於上表面上之環狀溝槽12。環狀溝槽12將基座1的上半部分隔成中心圓盤部分13以及環狀圓周部分14。環狀溝槽12具有底表面120。
As shown in Figs. 1 and 2, the
研磨墊整修裝置的扁平環狀修整元件的下半部係能套合於先前技術之基座1的環狀溝槽12內,並且與環狀溝槽12的底表面120接合。環狀圓周部分14的功用在於保護扁平環狀修整元件的邊緣,避免碰撞。
The lower half of the flat ring-shaped dressing element of the polishing pad dressing device can fit into the
先前技術之基座1並且具有形成於下表面11上之至少一螺絲孔15以及形成於下表面11上之至少一盲孔
16,以供先前技術之基座1定位、鎖固於研磨機台上之用。
The
已有文獻證實與扁平環狀修整元件接觸之環狀溝槽12的底表面120的平坦度影響磨墊整修裝置提供研磨墊移除率甚鉅。因此,環狀溝槽12的底表面120的平坦度中凸必須等於或小於10μm。也就是說,只允許環狀溝槽12的底表面120向上凸起等於或小於10μm。
Documents have proved that the flatness of the
基於上述原因,先前技術之基座1皆是以不鏽鋼塊加工而成。顯見地,將不鏽鋼塊加工成先前技術之基座1所需的加工量相當大。
For the above reasons, the
但是,採用先前技術以不鏽鋼塊加工而成的基座1之研磨墊整修裝置,在化學機械研磨製程中,基座1會有金屬溶出於研磨液中,尤其是鎳金屬的溶出。現行扁平環狀修整元件的基材係由陶瓷材料所形成,例如,碳化矽。所以,在化學機械研磨製程中,扁平環狀修整元件不會有金屬溶出。
However, using the prior art polishing pad reconditioning device for the
以往半導體元件製程線寬尚寬,先前技術之基座1溶出的金屬濃度尚不致汙染半導體元件,不會對半導體元件造成影響。然而,隨著半導體元件製程線寬邁入數奈米的時代,先前技術之基座1溶出的金屬濃度已會致汙染半導體元件,會對半導體元件造成影響。
In the past, the line width of the semiconductor device manufacturing process was still wide, and the metal concentration eluted from the
針對如何克服先前技術以不鏽鋼塊加工而成的基座1會有金屬溶出的問題,已有方案提出以陶瓷塊取代不鏽鋼塊,進而將陶瓷塊加工成如圖1及圖2所示的基座1。然而,此方案會有陶瓷塊加工困難、良率低的問題,導致以陶瓷塊加工成的基座1的成本甚高,難以導入應用。
In view of how to overcome the problem of metal elution in the
另有方案提出採用工程塑膠射出成型成如圖1及圖2所示的基座1。然而,此方案成型的基座1的強度堪慮,也難以導入應用。
Another proposal proposes to use engineering plastic injection molding to form the
因此,本發明所欲解決之一技術問題在於提供一種用於研磨墊整修裝置之基座。特別地,在研磨墊整修裝置於化學機械研磨製程中,根據本發明之基座不會有金屬溶出。並且,根據本發明之基座製造容易、成本低、強度高。根據本發明之基座與研磨墊整修裝置的扁平環狀修整元件接合之表面其平坦度也符合要求。 Therefore, one of the technical problems to be solved by the present invention is to provide a base for a polishing pad dressing device. In particular, in the chemical mechanical polishing process of the polishing pad conditioning device, the base according to the present invention will not have metal eluted. Moreover, the base according to the present invention is easy to manufacture, low in cost, and high in strength. The flatness of the surface where the base and the flat ring-shaped dressing element of the polishing pad dressing device according to the present invention are joined also meets the requirements.
根據本發明之一較佳實施例之基座係用於研磨墊整修裝置。研磨墊修整裝置包含扁平環狀修整元件。根據本發明之基座包含主圓盤、子圓盤以及環狀周圍元件。主圓盤係由第一陶瓷材料所形成。主圓盤具有第一上表面、第一下表面、形成於第一上表面上之圓形凹槽、第一圓周邊緣以及形成於第一圓周邊緣上之至少一第一溝槽。主圓盤的圓形凹槽具有底表面。子圓盤係由第二陶瓷材料所形成。子圓盤具有第二上表面、第二下表面以及第二圓周邊緣。子圓盤之第一部分係套合於主圓盤的圓形凹槽內。子圓盤係以其第二下表面接合於主圓盤的圓形凹槽的底表面上,並且子圓盤的第二上表面高於主圓盤的第一上表面。環狀周圍元件係由高分子材料所形成。環狀周圍元件係藉由包覆射出成型製程成型於主圓盤的第一圓周邊緣上,並且與第一圓周邊緣上之至少一第一溝槽卡合。環狀周圍元件具有第三上表面、第三下表面以及內壁。環狀周圍元件的第三上表面高於主圓盤的第一上表面。子圓盤的第二圓周邊緣、子圓盤的內壁以及位於第二圓周邊緣與內壁之間之主圓盤的第一上表面構成環狀第二溝槽。扁平環狀修整元件之第二部分係能套合並且接合於環狀第二溝槽內。 The base according to a preferred embodiment of the present invention is used in a polishing pad dressing device. The polishing pad dressing device includes a flat ring-shaped dressing element. The base according to the present invention includes a main disc, a sub disc, and ring-shaped surrounding elements. The main disc is formed of the first ceramic material. The main disc has a first upper surface, a first lower surface, a circular groove formed on the first upper surface, a first circumferential edge, and at least one first groove formed on the first circumferential edge. The circular groove of the main disc has a bottom surface. The sub-disc is formed of the second ceramic material. The sub-disc has a second upper surface, a second lower surface, and a second circumferential edge. The first part of the sub-disc is sleeved in the circular groove of the main disc. The second lower surface of the sub-disc is joined to the bottom surface of the circular groove of the main disc, and the second upper surface of the sub-disc is higher than the first upper surface of the main disc. The ring-shaped surrounding elements are formed of polymer materials. The ring-shaped surrounding element is formed on the first circumferential edge of the main disc by an over-injection molding process, and is engaged with at least one first groove on the first circumferential edge. The annular surrounding element has a third upper surface, a third lower surface and an inner wall. The third upper surface of the ring-shaped surrounding element is higher than the first upper surface of the main disc. The second circumferential edge of the sub-disc, the inner wall of the sub-disc, and the first upper surface of the main disc located between the second circumferential edge and the inner wall form an annular second groove. The second part of the flat ring-shaped trimming element can be sleeved and joined in the ring-shaped second groove.
於一具體實施例中,主圓盤的第一上表面的平坦度中凸範圍為0至10μm。 In a specific embodiment, the convexity of the flatness of the first upper surface of the main disk ranges from 0 to 10 μm.
於一具體實施例中,環狀周圍元件具有形成於第三下表面上之至少一螺絲孔以及形成於第三下表面上之至少一盲孔。 In a specific embodiment, the annular surrounding element has at least one screw hole formed on the third lower surface and at least one blind hole formed on the third lower surface.
於一具體實施例中,形成主圓盤的第一陶瓷材料以及形成子圓盤的第二陶瓷材料可以分別是氧化鋁、氧化鋯、氮化鋁、碳化矽、氧化矽、莫來石、堇青石或玻璃等,並且並不以上述陶瓷材料為限。 In a specific embodiment, the first ceramic material forming the main disc and the second ceramic material forming the sub-disc may be alumina, zirconia, aluminum nitride, silicon carbide, silicon oxide, mullite, and violet, respectively. Bluestone, glass, etc., and not limited to the above-mentioned ceramic materials.
於一具體實施例中,成型環狀周圍元件的高分子材料可以是丙烯腈-丁二烯-苯乙烯共聚物(ABS)、環氧樹脂(EPOXY)、聚醯胺(PA)、聚醯亞胺(PI)、聚醯胺醯亞胺(PAI)、聚丙烯酸(PAA)、聚丁烯(PB)聚碳酸酯(PC)、聚乙烯(PE)、聚醚醚酮(PEEK)聚對苯二甲酸乙二酯(PET)、酚醛樹脂(PF)、聚異丁烯(PIB)、聚乳酸(PLA)、聚甲基丙烯酸甲酯(PMMA)、聚縮醛(POM)、聚丙烯(PP)、聚苯乙烯(PS)、可塑性澱粉材料(PSM)、聚碸(PSU.PSF)、聚偏氟乙烯(PVDF)、聚四氟乙烯(PTFE)、聚氨酯(PU)、聚乙烯醇(PVA)、聚氯乙烯(PVC)、聚苯硫醚(PPS)、聚苯並噁唑(PBO)、聚苯並噻唑(PBT)或聚苯並咪唑(PB1)等,並且並不以上述高分子材料為限。 In a specific embodiment, the polymer material for forming the ring-shaped surrounding element can be acrylonitrile-butadiene-styrene copolymer (ABS), epoxy resin (EPOXY), polyamide (PA), polyamide Amine (PI), polyamide imine (PAI), polyacrylic acid (PAA), polybutene (PB) polycarbonate (PC), polyethylene (PE), polyether ether ketone (PEEK) poly-p-phenylene Ethylene Dicarboxylate (PET), Phenolic Resin (PF), Polyisobutylene (PIB), Polylactic Acid (PLA), Polymethyl Methacrylate (PMMA), Polyacetal (POM), Polypropylene (PP), Polystyrene (PS), plastic starch material (PSM), poly (PSU.PSF), polyvinylidene fluoride (PVDF), polytetrafluoroethylene (PTFE), polyurethane (PU), polyvinyl alcohol (PVA), Polyvinyl chloride (PVC), polyphenylene sulfide (PPS), polybenzoxazole (PBO), polybenzothiazole (PBT) or polybenzimidazole (PB1), etc., and do not use the above polymer materials as limit.
進一步,於一具體實施例中,高分子材料可以添加強化纖維。強化纖維可以是玻璃纖維、碳纖維、硼纖維或陶瓷纖維等。 Further, in a specific embodiment, the polymer material can be added with reinforcing fibers. The reinforcing fiber can be glass fiber, carbon fiber, boron fiber or ceramic fiber.
與先前技術不同,根據本發明之基座係由陶瓷材料及高分子材料所形成或成型。所以,在研磨墊整修裝置於化學機械研磨製程中,根據本發明之基座不會有金屬溶出。並且,根據本發明之基座製造容易、成本低、強度高。根據本發明之基座與研磨墊整修裝置的扁平環狀修整元件接合之表面其平坦度也符合要求。 Different from the prior art, the base according to the present invention is formed or molded by ceramic materials and polymer materials. Therefore, in the chemical mechanical polishing process of the polishing pad dressing device, the base according to the present invention will not have metal eluted. Moreover, the base according to the present invention is easy to manufacture, low in cost, and high in strength. The flatness of the surface where the base and the flat ring-shaped dressing element of the polishing pad dressing device according to the present invention are joined also meets the requirements.
關於本發明之優點與精神可以藉由以下的發明 詳述及所附圖式得到進一步的瞭解。 The advantages and spirit of the present invention can be achieved by the following invention The detailed description and the accompanying drawings are further understood.
1:基座 1: base
10:上表面 10: upper surface
11:下表面 11: lower surface
12:環狀溝槽 12: Ring groove
120:底表面 120: bottom surface
13:中心圓盤部分 13: Center disc part
14:環狀圓周部分 14: Annular circumference part
15:螺絲孔 15: Screw hole
16:盲孔 16: blind hole
2:基座 2: Pedestal
20:主圓盤 20: main disc
200:第一上表面 200: first upper surface
202:第一下表面 202: first lower surface
204:圓形凹槽 204: circular groove
2042:底表面 2042: bottom surface
206:第一圓周邊緣 206: first circumferential edge
208:第一溝槽 208: First Groove
209:環狀第二溝槽 209: Ring-shaped second groove
22:子圓盤 22: Sub-disc
220:第二上表面 220: second upper surface
222:第二下表面 222: second lower surface
224:第二圓周邊緣 224: second circumferential edge
24:環狀周圍元件 24: Ring surrounding elements
240:第三上表面 240: third upper surface
242:第三下表面 242: third lower surface
244:內壁 244: Inner Wall
246:螺絲孔 246: screw hole
248:盲孔 248: Blind Hole
圖1係先前技術之基座的頂視圖。 Figure 1 is a top view of a prior art base.
圖2係圖1中先前技術之基座沿A-A線的剖面視圖。 Fig. 2 is a cross-sectional view of the base of the prior art in Fig. 1 along the line A-A.
圖3係根據本發明之一較佳具體實例之基座的頂視圖。 Figure 3 is a top view of a base according to a preferred embodiment of the present invention.
圖4係圖3中根據本發明之基座沿B-B線的剖面視圖。 Fig. 4 is a cross-sectional view of the base according to the present invention in Fig. 3 along the line B-B.
請參閱圖3及圖4,該等圖式示意地描繪根據本發明之較佳具體實施例之用於研磨墊整修裝置之基座2。圖3係根據本發明之較佳具體實例之基座2的頂視圖。圖4係圖3中根據本發明之較佳具體實例之基座2沿B-B線的剖面視圖。研磨墊整修裝置包含扁平環狀修整元件(未繪示於圖3及圖4)。扁平環狀修整元件的基材係由陶瓷材料所形成,例如,碳化矽。
Please refer to FIGS. 3 and 4, which schematically depict a
如圖3及圖4所示,根據本發明之較佳實施例之基座2包含主圓盤20、子圓盤22以及環狀周圍元件24。
As shown in FIGS. 3 and 4, the
主圓盤20係由第一陶瓷材料所形成。主圓盤20具有第一上表面200、第一下表面202、形成於第一上表面200上之圓形凹槽204、第一圓周邊緣206以及形成於第一圓周邊緣206上之至少一第一溝槽208。第一上表面200係第一下表面202的相對面。於圖4中,僅繪示一條第一溝槽208做為代表。至少一第一溝槽208係沿著第一圓周邊緣206延伸。主圓盤20的圓形凹槽204具有底表面2042。
The
於一具體實施例中,至少一第一溝槽208可以在主圓盤20進行燒結製程之前先行形成。
In a specific embodiment, the at least one
於一具體實施例中,形成主圓盤20的第一陶瓷材料可以是氧化鋁、氧化鋯、氮化鋁、碳化矽、氧化矽、莫來石、堇青石或玻璃等,並且並不以上述陶瓷材料為限。
In a specific embodiment, the first ceramic material forming the
子圓盤22係由第二陶瓷材料所形成。子圓盤22具有第二上表面220、第二下表面222以及第二圓周邊緣224。第二上表面220係第二下表面222的相對面。子圓盤22之第一部分係套合於主圓盤20的圓形凹槽204內。子圓盤22係以其第二下表面222接合於主圓盤20的圓形凹槽204的底表面2042上,並且子圓盤22的第二上表面220高於主圓盤20的第一上表面200。
The sub-disc 22 is formed of a second ceramic material. The sub-disc 22 has a second
於一具體實施例中,子圓盤22的第二下表面222與主圓盤20的圓形凹槽204的底表面2042可以藉由玻璃膠,但並不以此為限,接合在一起。
In a specific embodiment, the second
於一具體實施例中,形成子圓盤22的第二陶瓷材料可以是氧化鋁、氧化鋯、氮化鋁、碳化矽、氧化矽、莫來石、堇青石或玻璃等,並且並不以上述陶瓷材料為限。 In a specific embodiment, the second ceramic material forming the sub-disc 22 may be alumina, zirconia, aluminum nitride, silicon carbide, silicon oxide, mullite, cordierite or glass, etc. Ceramic materials are limited.
環狀周圍元件24係由高分子材料所形成。環狀周圍元件24係藉由包覆射出成型製程成型於主圓盤20的第一圓周邊緣206上,並且與第一圓周邊緣206上之至少一第一溝槽208卡合。環狀周圍元件24具有第三上表面240、第三下表面242以及內壁244。第三上表面240係第三下表面242的相對面。環狀周圍元件24的第三上表面240係與主圓盤20的第一上表面200同一側,並且高於主圓盤20的第一上表面200。環狀周圍元件24的第三下表面242係與主圓盤20的第一下表面202同一側。
The ring-shaped
於一具體實施例中,成型環狀周圍元件24的高分子材料可以是丙烯腈-丁二烯-苯乙烯共聚物(ABS)、環氧樹脂(EPOXY)、聚醯胺(PA)、聚醯亞胺(PI)、聚醯胺醯亞胺(PAI)、
聚丙烯酸(PAA)、聚丁烯(PB)聚碳酸酯(PC)、聚乙烯(PE)、聚醚醚酮(PEEK)聚對苯二甲酸乙二酯(PET)、酚醛樹脂(PF)、聚異丁烯(PIB)、聚乳酸(PLA)、聚甲基丙烯酸甲酯(PMMA)、聚縮醛(POM)、聚丙烯(PP)、聚苯乙烯(PS)、可塑性澱粉材料(PSM)、聚碸(PSU.PSF)、聚偏氟乙烯(PVDF)、聚四氟乙烯(PTFE)、聚氨酯(PU)、聚乙烯醇(PVA)、聚氯乙烯(PVC)、聚苯硫醚(PPS)、聚苯並噁唑(PBO)、聚苯並噻唑(PBT)或聚苯並咪唑(PB1)等,並且並不以上述高分子材料為限。
In a specific embodiment, the polymer material for forming the ring-shaped
進一步,為了提升環狀周圍元件24的強度,於一具體實施例中,成型環狀周圍元件24的高分子材料可以添加強化纖維。強化纖維可以是玻璃纖維、碳纖維、硼纖維或陶瓷纖維等。
Further, in order to improve the strength of the annular
特別地,子圓盤22的第二圓周邊緣224、子圓盤22的內壁244以及位於第二圓周邊緣224與內壁244之間之主圓盤20的第一上表面200構成環狀第二溝槽209。扁平環狀修整元件之第二部分係能套合並且接合於環狀第二溝槽209內。
In particular, the second
於一具體實施例中,為能夠提供理想的研磨墊移除率,本發明之主圓盤20的第一上表面200的平坦度中凸範圍為0至10μm。也就是說,主圓盤20的第一上表面200向上凸起範圍為0至10μm。於實際應用中,關於主圓盤20的第一上表面200的平坦度中凸的量測可以藉由平坦度量測儀器量測主圓盤20的第一上表面200上至少16點獲得平坦度中凸的量測值。
In a specific embodiment, in order to provide an ideal polishing pad removal rate, the flatness convexity of the first
顯見地,與先前技術將陶瓷塊加工成如圖1及圖2所示的基座1相較,本發明之主圓盤20的第一上表面200、主圓盤20的第一下表面202、圓形凹槽204的底表面2042、子圓盤22的第二上表面220、子圓盤22的第二下表面222
的加工,尤其是研磨相對容易得多。所以,根據本發明之基座2加工容易、良率高,成本可以大幅降低。
Obviously, compared with the prior art processing the ceramic block into the
於一具體實施例中,如圖4所示,環狀周圍元件24具有形成於第三下表面242上之至少一螺絲孔246以及形成於第三下表面242上之至少一盲孔248,以供根據本發明之基座2定位、鎖固於研磨機台上之用。至少一螺絲孔246以及至少一盲孔248可以於包覆射出成型製程中與環狀周圍元件24一體成型,無須另行加工而成。
In a specific embodiment, as shown in FIG. 4, the ring-shaped
藉由以上對本發明之詳述,可以清楚了解根據本發明之基座係由陶瓷材料及高分子材料所形成或成型。所以,在研磨墊整修裝置於化學機械研磨製程中,根據本發明之基座不會有金屬溶出。並且,根據本發明之基座製造容易、成本低、強度高。根據本發明之基座與研磨墊整修裝置的扁平環狀修整元件接合之表面其平坦度也符合要求。 From the above detailed description of the present invention, it can be clearly understood that the base according to the present invention is formed or molded by ceramic materials and polymer materials. Therefore, in the chemical mechanical polishing process of the polishing pad dressing device, the base according to the present invention will not have metal eluted. Moreover, the base according to the present invention is easy to manufacture, low in cost, and high in strength. According to the present invention, the flatness of the surface where the base and the flat ring-shaped dressing element of the polishing pad dressing device meet the requirements.
藉由以上較佳具體實施例之詳述,係希望能更加清楚描述本發明之特徵與精神,而並非以上述所揭露的較佳具體實施例來對本發明之面向加以限制。相反地,其目的是希望能涵蓋各種改變及具相等性的安排於本發明所欲申請之專利範圍的面向內。因此,本發明所申請之專利範圍的面向應該根據上述的說明作最寬廣的解釋,以致使其涵蓋所有可能的改變以及具相等性的安排。 Based on the above detailed description of the preferred embodiments, it is hoped that the characteristics and spirit of the present invention can be described more clearly, rather than limiting the aspect of the present invention by the preferred embodiments disclosed above. On the contrary, its purpose is to cover various changes and equivalent arrangements within the scope of the patent for which the present invention is intended. Therefore, the aspect of the patent scope applied for by the present invention should be interpreted in the broadest way based on the above description, so as to cover all possible changes and equivalent arrangements.
2:基座 2: Pedestal
20:主圓盤 20: main disc
200:第一上表面 200: first upper surface
202:第一下表面 202: first lower surface
204:圓形凹槽 204: circular groove
2042:底表面 2042: bottom surface
206:第一圓周邊緣 206: first circumferential edge
208:第一溝槽 208: First Groove
209:環狀第二溝槽 209: Ring-shaped second groove
22:子圓盤 22: Sub-disc
220:第二上表面 220: second upper surface
222:第二下表面 222: second lower surface
224:第二圓周邊緣 224: second circumferential edge
24:環狀周圍元件 24: Ring surrounding elements
240:第三上表面 240: third upper surface
242:第三下表面 242: third lower surface
244:內壁 244: Inner Wall
246:螺絲孔 246: screw hole
248:盲孔 248: Blind Hole
Claims (6)
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