TW201912304A - Double-sided grinding device for the object to be used for grinding - Google Patents
Double-sided grinding device for the object to be used for grinding Download PDFInfo
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- TW201912304A TW201912304A TW107128980A TW107128980A TW201912304A TW 201912304 A TW201912304 A TW 201912304A TW 107128980 A TW107128980 A TW 107128980A TW 107128980 A TW107128980 A TW 107128980A TW 201912304 A TW201912304 A TW 201912304A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/28—Work carriers for double side lapping of plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Mechanical Treatment Of Semiconductor (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
Description
本發明係關於一種被研磨物保持用遊星輪,其係用於雙面研磨裝置者,且於被研磨物保持孔之周圍設置有研磨劑通過用之小孔,上述雙面研磨裝置係一面將被研磨物夾持並壓接於貼附有研磨布之上下定盤之間,一面使該上下定盤及該被研磨物之至少一個旋轉而對該被研磨物之兩面同時進行研磨加工。 The present invention relates to a caster wheel for holding an object to be polished, which is used for a double-side grinding device, and a small hole for passing the abrasive is provided around the holding hole of the object to be ground. The object to be ground is clamped and crimped between the upper and lower fixed plates to which the abrasive cloth is attached, while at least one of the upper and lower fixed plates and the object to be ground are rotated to simultaneously perform grinding processing on both sides of the object to be ground.
於由矽晶圓、化合物半導體晶圓、鋁製磁性硬盤基板、玻璃製磁性硬盤基板或光罩用玻璃、晶體振盪子、陶瓷等所構成之被研磨物之兩面研磨加工中,被研磨物被保持於被研磨物保持用遊星輪之保持孔中,上述被研磨物保持用遊星輪係具有與被研磨物之形狀一致之保持孔,且以於其外周緣部具有與雙面研磨裝置之內齒輪與太陽齒輪嚙合之外周齒之方式成型,被研磨物藉由內齒輪與太陽齒輪之旋轉而以進行行星運動之方式旋轉,與此同時旋轉驅動上下定盤,藉此對被研磨物之上下兩面同時進行研磨加工。該被研磨物保持用遊星輪係用作用以對被研磨物之兩面同時進行研磨加工或鏡面研磨加工之研磨裝置之構件。 During polishing of both sides of an object consisting of a silicon wafer, a compound semiconductor wafer, an aluminum magnetic hard disk substrate, a glass magnetic hard disk substrate, or glass for a photomask, a crystal oscillator, ceramics, etc. It is held in a holding hole of a caster wheel for holding an object to be polished. The above-mentioned caster wheel for holding an object has a holding hole that conforms to the shape of the object to be polished. The gear and the sun gear mesh with the outer peripheral teeth. The object to be ground is rotated in a planetary motion by the rotation of the internal gear and the sun gear. At the same time, the upper and lower fixed disks are rotated to drive the object to be ground. Both sides are simultaneously ground. The planetary gear train for holding an object to be polished is used as a member of a polishing device for simultaneously performing polishing processing or mirror polishing processing on both surfaces of the object to be polished.
先前,被研磨物保持用遊星輪一般藉由如下方法製造,即,使用鋼或不鏽鋼等金屬材料、纖維強化樹脂(FRP)等作為材料,對其以具有能夠保持被研磨物之大小之保持孔之方式進行加工,進而對其外周以具有與內齒 輪及太陽齒輪之齒輪形狀嚙合之外周齒之方式進行加工。 Conventionally, a star wheel for holding an object to be ground is generally manufactured by using a metal material such as steel or stainless steel, fiber-reinforced resin (FRP), and the like, and holding holes having a size capable of holding the object to be ground. Processing is performed in such a manner that the outer periphery thereof is processed so as to have outer peripheral teeth that mesh with the gear shapes of the internal gear and the sun gear.
於上述研磨加工中,在研磨加工中研磨液自形成於上定盤之研磨液供給孔供給至加工部,自保持孔之間隙亦進入下定盤側而對被研磨物之上下兩面同時進行研磨加工。然而,於使用如穿孔於被研磨物保持用遊星輪之孔僅為被研磨物保持孔之被研磨物保持用遊星輪之情形時,被研磨物保持用遊星輪及被研磨物成為如覆蓋下定盤之大致整面之形態,因此研磨液向下定盤側之流入變得不充分,而均質之加工變得困難。因此,指出產生如下不佳之現象:加工後之被研磨物之形狀變成錐狀,或發生外周塌陷,或產生精加工表面粗糙度之偏差,或者上下表面之表面粗糙度不同等。進而,亦指出如下問題:研磨液由於因伴隨旋轉產生之離心力而在充分有助於研磨加工之前容易排出至系統外,故而其浪費較多。 In the above-mentioned polishing process, during the polishing process, the polishing liquid is supplied from the polishing liquid supply hole formed on the upper platen to the processing portion, and the gap between the self-holding holes also enters the lower platen side, and the upper and lower surfaces of the object to be polished are simultaneously polished. . However, in the case where the hole for perforating the caster wheel for holding the object to be polished is only the part for holding the object wheel for holding the object, the caster wheel for holding the object and the object to be ground become as described below. The shape of the disk is substantially the entire surface, so that the inflow of the polishing liquid downward to the disk side becomes insufficient, and homogeneous processing becomes difficult. Therefore, it is pointed out that the following phenomena occur: the shape of the object to be ground becomes tapered after processing, or peripheral collapse, or deviation in the roughness of the finished surface, or the surface roughness of the upper and lower surfaces is different. Furthermore, a problem was also pointed out that the polishing liquid was easily discharged out of the system before centrifugal force due to the rotation was enough to contribute to the polishing process, so it wasted much.
尤其是,近年來被研磨物之製造技術有所進步,因此上述關於被研磨物保持用遊星輪之問題變得更明顯,從而強烈要求解決該問題。 In particular, in recent years, the manufacturing technology of the object to be ground has been improved, so the above-mentioned problem about the star wheel for holding the object to be ground has become more obvious, and it is strongly demanded to solve the problem.
為了避免產生如上所述之現象,先前以來提出有一種方法,其係於保持孔以外之位置穿孔虛設孔(亦稱為虛設洞孔),將其作為研磨液通過孔,而使研磨液向下定盤側之流入變得順暢(專利文獻1或專利文獻2)。 In order to avoid the phenomenon described above, a method has been proposed previously, which is to perforate a dummy hole (also called a dummy hole) at a position other than the holding hole, and use it as a polishing liquid through the hole to make the polishing liquid downward. The inflow on the disk side becomes smooth (Patent Document 1 or Patent Document 2).
又,於專利文獻3中揭示有一種方法,其係於被研磨物保持用遊星輪之保持孔以外之區域設置網狀之空隙部分,改善研磨液向下定盤側之流入,而防止加工後之被研磨物之起伏現象。 In addition, Patent Document 3 discloses a method in which a mesh-shaped void portion is provided in a region other than the holding hole of the caster wheel for holding an object to be polished to improve the inflow of the polishing liquid downward to the platen side and prevent the after-processing. Fluctuations of the object to be ground.
於專利文獻4中提出有一種被研磨物保持用遊星輪,其係藉由規定研磨液通過孔之直徑或研磨液通過孔彼此之間隔,而抑制被研磨物保持用遊星輪之位移量而使得不產生應變。 Patent Document 4 proposes a caster wheel for holding an object to be polished, which restricts the amount of displacement of the caster wheel for holding an object by specifying the diameter of the polishing liquid passage hole or the distance between the polishing liquid passage holes. No strain.
[先前技術文獻] [Prior technical literature]
[專利文獻] [Patent Literature]
[專利文獻1]日本專利特開平11-170164號公報 [Patent Document 1] Japanese Patent Laid-Open No. 11-170164
[專利文獻2]日本專利特開2004-291115號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2004-291115
[專利文獻3]日本專利特開2000-84835號公報 [Patent Document 3] Japanese Patent Laid-Open No. 2000-84835
[專利文獻4]日本專利特開2016-22542號公報 [Patent Document 4] Japanese Patent Laid-Open No. 2016-22542
然而,即便利用該等方法,研磨液向被研磨物背面(下定盤側)之供給(流入)亦未必充分,從而研磨液向上下定盤之供給量之均質化並不充分。即,絕不容易獲得具有精緻之上下表面粗糙度,且具有優異之平行度、優異之平坦度之被研磨物。 However, even with these methods, the supply (inflow) of the polishing liquid to the back surface (lower platen side) of the object to be polished is not necessarily sufficient, so that the amount of supply of the polishing liquid to the upper and lower platen is not uniform. That is, it is by no means easy to obtain an object to be polished which has a fine upper and lower surface roughness and has excellent parallelism and excellent flatness.
本發明人等對用於矽晶圓等被研磨物之兩面研磨加工之被研磨物保持用遊星輪進行努力研究,從而完成了本發明,其目的在於提供一種解決上述問題之被研磨物保持用遊星輪。即,本發明人等發現,藉由在被研磨物之保持孔以外之被研磨物保持用遊星輪基材之區域以固定間隔配置固定孔徑之小孔,並以該小孔之孔徑自基材之內側朝向外側變大之方式具有梯度地配置,而使研磨液之流動均質化,從而獲得上下兩面之表面粗糙度均勻且亦無不均,且具有高平行度、高平坦度之被研磨物。 The present inventors have made intensive research on a caster wheel for holding an object to be polished for polishing both sides of an object to be polished, such as a silicon wafer, and have thus completed the present invention. An object of the present invention is to provide an object for holding an object to be polished that solves the above-mentioned problems. Star wheel. That is, the present inventors have discovered that small holes with fixed apertures are arranged at fixed intervals in the region of the base member of the planetary wheel for holding the object other than the holding holes of the object to be ground, and the holes have a hole diameter from the base material. The method of increasing the inner side to the outer side is arranged in a gradient manner, so that the flow of the polishing liquid is homogenized, so that the surface roughness of the upper and lower surfaces is uniform without unevenness, and the object to be polished has high parallelism and high flatness. .
上述課題係藉由雙面研磨裝置用之被研磨物保持用遊星輪而達成,該被研磨物保持用遊星輪係具有1個或1個以上之用以保持被研磨物之保持孔者,其特徵在於:於較以具有與上述保持孔相同之中心且具有大於其半徑之半徑之方式劃出之假想同心圓更靠內側之遊星輪基材穿孔複數個小孔,且於較 上述假想同心圓更靠外側之遊星輪基材穿孔複數個具有大於上述小孔之直徑之小孔。 The above-mentioned problem is achieved by a caster wheel for holding an object to be polished for a double-side polishing device. The star wheel system for holding an object has one or more holding holes for holding the object to be polished. It is characterized in that a plurality of small holes are perforated in the star wheel base material which is more inside than the imaginary concentric circle drawn in the same way as the above-mentioned holding hole and has a radius larger than its radius, and is more than the above imaginary concentric circle The substrate of the star wheel further outside is perforated with a plurality of small holes having a diameter larger than the small holes.
於本發明之被研磨物保持用遊星輪中,較佳為被研磨物(工件)之半徑與上述假想同心圓之半徑之差為上述保持孔之半徑以下。若即2個圓之半徑之差超過保持孔之半徑,則於較假想同心圓更靠內側之遊星輪基材穿孔小孔之區域變寬,於較假想同心圓更靠外側之遊星輪基材穿孔具有大於上述小孔之直徑之小孔的區域變窄,因此基於上述各小孔之尺寸之梯度實現之研磨液之流動之均質化變得不充分。具體而言,以被研磨物之半徑之10%至70%之範圍設定。 In the planetary wheel for holding an object to be polished of the present invention, it is preferable that the difference between the radius of the object to be ground (workpiece) and the radius of the imaginary concentric circle is equal to or less than the radius of the holding hole. If the difference between the radii of the two circles exceeds the radius of the holding hole, the area of the perforated small hole in the star wheel base material that is more inward than the imaginary concentric circle is wider, and the star wheel base material is more outside than the imaginary concentric circle The area of the perforation having a small hole larger than the diameter of the small hole is narrowed, so that the homogenization of the flow of the polishing liquid based on the gradient of the size of each small hole becomes insufficient. Specifically, it is set in the range of 10% to 70% of the radius of the object to be polished.
於本發明之被研磨物保持用遊星輪中,較佳為於較上述假想同心圓更靠內側之遊星輪基材穿孔之複數個小孔之直徑為被研磨物(工件)之半徑之3%至15%。若小於3%,則即便於小孔中研磨液之表面張力產生作用,作為用以進行研磨液向下定盤側之流入之研磨液通過孔之作用亦降低。若超過15%,則保持自於較假想同心圓更靠外側之遊星輪基材穿孔之小孔供給之研磨液之能力降低,向上下兩定盤之研磨面及被研磨物供給研磨液之平衡性變差,而無法進行均質之研磨。具體而言,以Φ3mm至Φ15mm之範圍設定。 In the planetary wheel for holding an object to be grounded in the present invention, it is preferable that the diameter of the plurality of small holes perforated by the planetary wheel base material which is more inward than the imaginary concentric circle above is 3% of the radius of the object (workpiece). To 15%. If it is less than 3%, even if the surface tension of the polishing liquid in the small hole acts, the function of the polishing liquid passing hole as the inflow of the polishing liquid downward to the plate side is reduced. If it exceeds 15%, the ability to maintain the polishing liquid supplied from the small holes perforated by the star wheel base material which is more outward than the concentric circle is reduced, and the balance between the polishing surface of the upper and lower plates and the polishing liquid supplied by the object to be polished is balanced. The properties are deteriorated, and homogeneous grinding cannot be performed. Specifically, it is set in a range of Φ3mm to Φ15mm.
於本發明之被研磨物保持用遊星輪中,較佳為於較上述假想同心圓更靠外側之遊星輪基材穿孔之複數個小孔、即較大之小孔之直徑為被研磨物(工件)之半徑之6%至30%。若小於6%,則與較小之小孔、即於較假想同心圓更靠內側之遊星輪基材穿孔之小孔的直徑之差變少,而基於上述小孔之尺寸之梯度實現之研磨液之流動之均質化變得不充分。又,若超過30%,則於較假想同心圓更靠外側之遊星輪基材穿孔之小孔的保持研磨液之能力降低,向於較假想同心圓更靠內側之遊星輪基材穿孔之小孔的研磨液供給變得不充分,向上下兩定盤之研磨面及被研磨物供給研磨液之平衡性變差,而無法進行均質之 研磨。具體而言,以Φ10mm至Φ30mm之範圍設定。 In the planetary wheel for holding an object to be ground of the present invention, it is preferable that a plurality of small holes perforated on the planetary wheel base material which is further outside than the imaginary concentric circle described above, that is, the diameter of the larger small hole is the object to be grounded ( Workpiece) radius of 6% to 30%. If it is less than 6%, the difference between the diameter of the small hole with the smaller hole, that is, the hole perforated on the star wheel base material which is more inward than the imaginary concentric circle, becomes smaller, and the grinding based on the gradient of the size of the above hole is realized. The homogenization of the liquid flow becomes insufficient. In addition, if it exceeds 30%, the ability to retain the abrasive liquid in the small holes perforated by the star wheel base material which is more outward than the concentric circle is reduced, and the smaller the perforation of the star wheel base material which is more inside than the hypothetical concentric circle The supply of the polishing liquid to the holes becomes insufficient, and the balance between the polishing surfaces of the upper and lower platens and the polishing liquid supplied to the object to be polished deteriorates, making it impossible to perform homogeneous polishing. Specifically, it is set in a range of Φ10 mm to Φ30 mm.
進而,於本發明之被研磨物保持用遊星輪中,較佳為被研磨物保持孔以外之複數個小孔與相鄰小孔之間隔於較上述假想同心圓更靠內側之小孔之情形時,為該小孔之直徑以下。若以大於直徑之間隔進行排列,則孔之配置變得過於稀疏,而無法獲得本發明之目標效果。具體而言,以相對於小孔直徑為30%至100%之範圍設定。 Further, in the planetary wheel for holding an object to be polished according to the present invention, it is preferable that a plurality of small holes other than the object holding hole to be held are spaced closer to each other than the above-mentioned imaginary concentric circles. Is less than the diameter of the small hole. If arranged at intervals larger than the diameter, the arrangement of the holes becomes too sparse, and the target effect of the present invention cannot be obtained. Specifically, it is set in a range of 30% to 100% with respect to the small hole diameter.
又,於本發明之被研磨物保持用遊星輪中,較佳為被研磨物保持孔以外之複數個小孔與相鄰小孔之間隔於較上述假想同心圓更靠外側之小孔之情形時,為該小孔之直徑以下。若以大於直徑之間隔進行排列,則孔之配置變得過於稀疏,而無法獲得本發明之目標效果。具體而言,以相對於小孔直徑為30%至100%之範圍設定。 Further, in the caster wheel for holding an object to be polished according to the present invention, it is preferable that a plurality of small holes other than the object holding hole is spaced from adjacent small holes at a position closer to the outside than the imaginary concentric circles. Is less than the diameter of the small hole. If arranged at intervals larger than the diameter, the arrangement of the holes becomes too sparse, and the target effect of the present invention cannot be obtained. Specifically, it is set in a range of 30% to 100% with respect to the small hole diameter.
本發明之特徵在於:藉由在被研磨物保持用遊星輪之被研磨物保持孔以外之區域設置複數個小孔,並以該小孔之孔徑自遊星輪基材之內側朝向外側變大之方式設置梯度地配置,而研磨液向上下兩定盤之研磨面之擴散變得順暢,研磨液之分佈變得均質。於以下所示之本發明之說明中,列舉如該小孔之分佈區域成為兩重之例,但並不特別受限定,亦可將其設為三重或三重以上。 The present invention is characterized in that a plurality of small holes are provided in an area other than the object holding hole of the star wheel for holding the object, and the hole diameter of the small hole becomes larger from the inner side of the star wheel base toward the outer side. The method is arranged in a gradient manner, and the diffusion of the polishing liquid to the polishing surfaces of the two fixed plates becomes smooth, and the distribution of the polishing liquid becomes homogeneous. In the description of the present invention shown below, a case where the distribution area of the pinholes becomes double is listed, but it is not particularly limited, and it may be set to triple or more.
藉由本發明之被研磨物保持用遊星輪,作為兩面研磨中之研磨劑之研磨液向上下兩定盤之研磨面之供給變得均等,同時亦可使研磨液在定盤研磨面之分佈變得均質。藉此,可獲得如下被研磨物,該被研磨物中,被研磨物之上下兩面均具有精緻之表面粗糙度,又,成為無不均之面,且平坦度優異。又,研磨液之消耗亦變少,而可削減研磨加工中之費用。 With the planetary wheel for holding an object to be polished according to the present invention, the supply of the polishing liquid used as the abrasive in the double-side polishing to the polishing surfaces of the two fixed plates becomes equal, and at the same time, the distribution of the polishing liquid on the polished surface of the fixed plate can be changed. Get homogeneous. This makes it possible to obtain an object to be polished, in which both the upper and lower surfaces of the object to be polished have a fine surface roughness, a non-uniform surface, and excellent flatness. In addition, the consumption of the polishing liquid is reduced, and the cost in the polishing process can be reduced.
1‧‧‧被研磨物保持用之保持孔 1‧‧‧ Retaining hole for holding abrasive
2‧‧‧具有與保持孔相同之中心點之假想同心圓 2‧‧‧ An imaginary concentric circle with the same center point as the holding hole
3‧‧‧Φ10mm之研磨液通過用小孔 3‧‧‧Φ10mm abrasive liquid through the small hole
4‧‧‧Φ15mm之研磨液通過用小孔 4‧‧‧Φ15mm abrasive liquid through the small hole
5‧‧‧Φ100mm之研磨液通過用小孔 5‧‧‧Φ100mm abrasive liquid through the small hole
6‧‧‧Φ50mm之研磨液通過用小孔 6‧‧‧Φ50mm abrasive liquid through the small hole
7‧‧‧Φ30mm之研磨液通過用小孔 7‧‧‧Φ30mm polishing liquid through small holes
圖1係本發明之被研磨物保持用遊星輪之俯視圖。 FIG. 1 is a plan view of a star wheel for holding an object to be polished according to the present invention.
圖2係本發明之被研磨物保持用遊星輪之主要部分俯視放大圖。 FIG. 2 is an enlarged plan view of a main part of a star wheel for holding an object to be polished according to the present invention.
圖3係藉由習知技術所獲得之被研磨物保持用遊星輪之一例之俯視圖。 FIG. 3 is a plan view of an example of a caster wheel for holding an object to be ground obtained by a conventional technique.
圖4係藉由習知技術所獲得之被研磨物保持用遊星輪之另一例之俯視圖。 FIG. 4 is a plan view of another example of a star wheel for holding an object to be ground obtained by a conventional technique.
圖5係藉由習知技術所獲得之被研磨物保持用遊星輪之另一例之俯視圖。 FIG. 5 is a plan view of another example of a star wheel for holding an object to be ground obtained by a conventional technique.
圖6係表示使用本發明之被研磨物保持用遊星輪進行研磨所得的Φ300mm之矽晶圓之直徑方向(X軸)之厚度分佈(Y軸)測定結果的曲線圖。 FIG. 6 is a graph showing a measurement result of a thickness distribution (Y-axis) in a diameter direction (X-axis) of a Φ300 mm silicon wafer obtained by polishing using a planetary wheel for holding an object to be polished according to the present invention.
圖7係表示使用圖3所示之習知之被研磨物保持用遊星輪進行研磨所得的Φ300mm之矽晶圓之直徑方向(X軸)之厚度分佈(Y軸)測定結果的曲線圖。 FIG. 7 is a graph showing a measurement result of a thickness distribution (Y-axis) in a diameter direction (X-axis) of a silicon wafer Φ300 mm obtained by polishing using a conventional star wheel for holding an object to be polished shown in FIG. 3.
圖8係表示使用圖4所示之習知之被研磨物保持用遊星輪進行研磨所得的Φ300mm之矽晶圓之直徑方向(X軸)之厚度分佈(Y軸)測定結果的曲線圖。 FIG. 8 is a graph showing a measurement result of a thickness distribution (Y-axis) in a diameter direction (X-axis) of a silicon wafer of Φ300 mm obtained by polishing using a conventional caster wheel for holding an object to be polished shown in FIG. 4.
圖9係表示使用圖5所示之習知之被研磨物保持用遊星輪進行研磨所得的Φ300mm之矽晶圓之直徑方向(X軸)之厚度分佈(Y軸)測定結果的曲線圖。 FIG. 9 is a graph showing a measurement result of a thickness distribution (Y-axis) in a diameter direction (X-axis) of a silicon wafer of Φ300 mm obtained by polishing using a conventional star wheel for holding an object to be polished shown in FIG. 5.
其次,使用圖式對本發明之內容進行說明。圖1係作為本發明之一實施態樣之被研磨物保持用遊星輪之俯視圖,圖2係其主要部分放大圖。穿孔有複數個(於本實施態樣中為3個)Φ300mm之被研磨物保持用之保持孔1。針對該3個被研磨物保持用之保持孔之各個,劃出具有與各保持孔相同之中心點且半徑210mm之假想同心圓2,將自被研磨物保持用之保持孔1之周緣至假想同心圓2之內周緣為止之區域設為A區域,將相較該A區域更靠外側之區域設為B區域。並且,於A區域以與相鄰之研磨液通過用小孔之間隔成為7.5mm之方 式穿孔Φ10mm之研磨液通過用小孔3,於B區域以與相鄰之研磨液通過用小孔之間隔成為10mm之方式穿孔Φ15mm之研磨液通過用小孔4。 Next, the content of this invention is demonstrated using drawing. FIG. 1 is a top view of a caster wheel for holding an object to be polished as an embodiment of the present invention, and FIG. 2 is an enlarged view of a main part thereof. There are a plurality of holding holes 1 (three in this embodiment) of holding holes 1 for holding objects to be ground Φ300 mm. For each of the three holding holes for holding the object to be ground, draw an imaginary concentric circle 2 having the same center point as each holding hole and having a radius of 210 mm, from the periphery of the holding hole 1 for holding the object to be ground to the imaginary A region up to the inner periphery of the concentric circle 2 is referred to as an A region, and a region further outside than the A region is referred to as a B region. In addition, in the area A, a hole Φ10mm is used to pass through the small holes 3 so that the distance between the small holes passing through the holes is 7.5 mm, and in the area B is a small hole that is adjacent to the liquid passing through the holes. A small-diameter Φ15 mm polishing liquid is passed through the small hole 4 so as to be 10 mm.
於圖1及圖2所示之被研磨物保持用遊星輪之情形時,存在3個之保持孔1之半徑為150mm,具有相同之中心點之假想同心圓2之半徑為210mm,因此兩者之半徑之差為60mm,該數值小於被研磨物保持用之保持孔之半徑150mm。穿孔於A區域之複數個研磨液通過用小孔之直徑由於為Φ10mm,故而成為作為被研磨物之矽晶圓之半徑150mm之6.67%。又,穿孔於B區域之複數個研磨液通過用小孔之直徑由於為Φ15mm,故而成為作為被研磨物之矽晶圓之半徑150mm之10.0%。 In the case of a star wheel for holding an object to be polished shown in FIG. 1 and FIG. 2, there are three holding holes 1 with a radius of 150 mm and an imaginary concentric circle 2 with the same center point having a radius of 210 mm. The difference between the radii is 60 mm, which is smaller than the 150 mm radius of the holding hole for holding the object to be ground. Because the diameter of the plurality of polishing liquids perforated in the area A is Φ10 mm, the diameter of the small holes becomes 6.67% of the 150 mm radius of the silicon wafer to be polished. In addition, since the diameter of the plurality of polishing liquids perforated in the B region is Φ15 mm, the diameter of the small holes is 10.0% of the 150 mm radius of the silicon wafer to be polished.
本發明中言及之所謂被研磨物(工件),係指矽晶圓、化合物半導體晶圓、鋁製磁性硬盤基板、玻璃製磁性硬盤基板或光罩用玻璃、晶體振盪子、陶瓷等,並不特別受限定,但主要以矽晶圓為目標。又,雖然其形狀為大致圓形,但其尺寸(直徑)或形狀並不特別受限定,例如可列舉Φ300mm之矽晶圓等大口徑被研磨物等,本發明針對該等被研磨物效果明顯。又,本發明中言及之所謂兩面研磨,係指拋光、預拋光、研磨等,並不特別受限定。 The object to be polished (workpiece) referred to in the present invention refers to silicon wafers, compound semiconductor wafers, aluminum magnetic hard disk substrates, glass magnetic hard disk substrates, or glass for photomasks, crystal oscillators, ceramics, etc. It is particularly limited, but mainly targets silicon wafers. In addition, although its shape is approximately circular, its size (diameter) or shape is not particularly limited. For example, a large-diameter object such as a silicon wafer with a diameter of 300 mm can be cited. The present invention has a significant effect on such objects. . In addition, the so-called double-sided polishing referred to in the present invention refers to polishing, pre-polishing, polishing, and the like, and is not particularly limited.
本發明之被研磨物保持用遊星輪所使用之材質可使用不鏽鋼、碳素工具鋼(SK鋼)、高碳鉻軸承鋼、高速工具鋼、合金工具鋼、高張力鋼或鈦等金屬、陶瓷、聚醯胺、聚縮醛、聚氯乙烯、聚碳酸酯、聚醯亞胺、聚醯胺醯亞胺、環氧等樹脂或將玻璃纖維、碳纖維、芳香族聚醯胺纖維、夾布膠木(cloth bakelite)等纖維材料與環氧樹脂、聚醯胺樹脂、酚系樹脂等複合化而成之纖維強化塑膠(FRP),並不特別受限定。亦可使用聚丙烯等樹脂或類鑽碳被覆該等被研磨物保持用遊星輪之表面。並且,本發明之被研磨物保持用遊星輪係為了防止被研磨物外緣部之損傷而於被研磨物保持孔之內周緣部設置有芳香族聚醯胺樹脂等樹脂製之框。 The material used for the planetary wheel for holding the abrasive object of the present invention can be stainless steel, carbon tool steel (SK steel), high-carbon chromium bearing steel, high-speed tool steel, alloy tool steel, high tension steel, or titanium and other metals and ceramics. , Polyamide, polyacetal, polyvinyl chloride, polycarbonate, polyimide, polyimide, epoxy and other resins, or glass fiber, carbon fiber, aromatic polyimide fiber, cloth glue A fiber-reinforced plastic (FRP) in which a fiber material such as cloth (bakelite) is compounded with an epoxy resin, a polyamide resin, a phenol resin, or the like is not particularly limited. Resin or diamond-like carbon such as polypropylene can also be used to cover the surface of the caster wheel for holding such abrasives. In addition, in order to prevent damage to the outer edge portion of the object to be polished, the star wheel for holding the object of the present invention is provided with a resin frame such as an aromatic polyamide resin at the inner peripheral portion of the object holding hole.
圖3係藉由習知技術所獲得之被研磨物保持用遊星輪之說明圖。除被研磨物保持用之保持孔1以外還形成有不定形之研磨液通過孔。通過孔之形狀具有大致菱形、大致三角形等不定形之形態。 FIG. 3 is an explanatory diagram of a star wheel for holding an object to be ground obtained by a conventional technique. In addition to the holding hole 1 for holding the object to be polished, an irregular polishing liquid passage hole is formed. The shape of the passage hole has an irregular shape such as a substantially rhombic shape and a substantially triangular shape.
圖4亦為藉由習知技術所獲得之被研磨物保持用遊星輪之說明圖。穿孔有複數個(3個)Φ300mm之被研磨物保持用之保持孔。於該各個保持孔以外之區域,形成有大小不同之尺寸之研磨液通過孔。該習知技術中之研磨液通過用小孔係由3個Φ100mm研磨液通過用小孔5、與6個Φ50mm研磨液通過用小孔6所構成。該等研磨液通過用小孔雖然由孔徑較小者與較大者所構成,但並未如本發明般以具有自接近各保持孔之側朝向遠離之側變大之梯度之方式進行排列。 FIG. 4 is an explanatory diagram of a star wheel for holding an object to be ground obtained by a conventional technique. The perforation has a plurality of (3) holding holes for holding an object to be ground with a diameter of 300 mm. Grinding liquid passing holes having different sizes are formed in areas other than the respective holding holes. In the conventional technique, the polishing liquid passing through the small hole system is composed of 3 Φ100 mm polishing liquid passing through the small holes 5, and 6 Φ50 mm polishing liquid passing through the small holes 6. Although these polishing liquids are composed of a smaller hole and a larger hole by using small holes, they are not arranged in such a manner as to have a gradient from a side closer to each holding hole toward a side farther away as in the present invention.
圖5亦為藉由習知技術所獲得之被研磨物保持用遊星輪之說明圖。穿孔有複數個(3個)Φ300mm之被研磨物保持用之保持孔1。於該各個保持孔以外之區域,以與相鄰之小孔之間隔成為22mm之方式穿孔有複數個Φ30mm之研磨液通過用小孔7。研磨液通過用小孔之孔徑僅為一種,並非如本發明般混合存在有不同孔徑者。 FIG. 5 is also an explanatory diagram of a star wheel for holding an object to be ground obtained by a conventional technique. There are a plurality of (3) holding holes 1 for holding an object to be ground Φ300 mm. A plurality of Φ30 mm polishing liquid passing small holes 7 are perforated in a region other than each of the holding holes so that the distance from the adjacent small holes becomes 22 mm. There is only one kind of pore size of the polishing liquid by using small pores, and those with different pore sizes are not mixed as in the present invention.
於圖1及圖2中,作為本發明之被研磨物保持用遊星輪之一實施態樣,表示在一片上穿孔有3個直徑Φ300mm之被研磨物保持用之保持孔之被研磨物保持用遊星輪。於該情形時,保持孔以外之區域之面積相對變小,故而於本實施例中,藉由一個假想同心圓(一重之假想同心圓)將供穿孔小孔之區域隔開,但若將保持孔之數量設為一個,則亦可將由半徑不同之複數個假想同心圓隔開之供穿孔研磨液通過用小孔的區域設為一個以上。於假定僅穿孔有1個Φ300mm之矽晶圓保持用保持孔之被研磨物保持用遊星輪之情形時,可藉由半徑不同之複數個假想同心圓(此處為兩重假想同心圓)將由假想同心圓形成之區域設為三重即A區域、B區域、C區域。於該情形時,例如可於A區域穿孔Φ5 mm(相對於被研磨物之半徑之比率為3.33%)之研磨液通過用小孔,於B區域穿孔Φ10mm(相對於被研磨物之半徑之比率為6.67%)之研磨液通過用小孔,於C區域穿孔Φ15mm(相對於被研磨物之半徑之比率為10.00%)之研磨液通過用小孔,而可期待更高之效果。於在由複數個假想同心圓隔開之區域穿孔研磨液通過用小孔之情形時,可於最靠近保持孔之區域穿孔直徑最小之研磨液通過用小孔,於與該區域相鄰之外側之區域穿孔具有較穿孔於最靠近保持孔之區域之研磨液通過用小孔大之直徑的研磨液通過用小孔,進而於與該外側之區域相鄰之區域穿孔具有較穿孔於與最靠近保持孔之區域相鄰之外側之區域之研磨液通過用小孔大之直徑的研磨液通過用小孔。即,於由複數個假想同心圓隔開之區域存在三個以上之情形時,可以如下方式進行穿孔,即,研磨液通過用小孔之直徑以最靠近保持孔之區域之研磨液通過用小孔之直徑為基準,隨著到達外側之區域而研磨液通過用小孔之直徑變大。 In FIGS. 1 and 2, as an embodiment of the caster wheel for holding an object to be grounded according to the present invention, it is shown that one object is used for holding the object to be ground with three holding holes for holding the object with a diameter of Φ300 mm. Star wheel. In this case, the area of the area outside the holding hole is relatively small, so in this embodiment, the area for the perforated small hole is separated by an imaginary concentric circle (a double imaginary concentric circle), but if the If the number of holes is set to one, the area where the perforated polishing liquid passes through the small holes separated by a plurality of imaginary concentric circles with different radii may be set to one or more. When it is assumed that only one Φ300mm silicon wafer holding holding hole is used for holding a grinding wheel for holding an abrasive, a plurality of imaginary concentric circles with different radii (here, two imaginary concentric circles) will be determined by The area formed by the imaginary concentric circles is set to triple, that is, A area, B area, and C area. In this case, for example, it is possible to perforate a polishing liquid of Φ5 mm (the ratio with respect to the radius of the object to be polished is 3.33%) in area A, and use a small hole to perforate Φ10 mm (the ratio to the radius of the object to be ground). (6.67%) The polishing liquid passes through the small hole, and the C area is punched with Φ15mm (the ratio of the radius to the object to be polished is 10.00%). The polishing liquid passes through the small hole, and higher effects can be expected. In the case of perforating the polishing liquid through the small holes in the area separated by a plurality of imaginary concentric circles, the polishing liquid with the smallest perforation diameter in the area closest to the holding hole can pass through the small holes on the outer side adjacent to the area. The perforation of the area has a perforation which is more perforated in the area closest to the holding hole. The perforation of the larger diameter of the small diameter hole is passed through the small hole, and the perforation of the area adjacent to the outer area is more perforated to the nearest. The polishing liquid passing through a small hole with a large diameter is passed through the small hole through the polishing liquid in the region adjacent to the outer side of the hole holding hole. That is, when there are three or more regions separated by a plurality of imaginary concentric circles, perforation can be performed in such a manner that the polishing liquid passes through the small hole diameter and the polishing liquid passing through the area closest to the holding hole passes through the small hole. The diameter of the hole is used as a reference, and the diameter of the small hole for polishing liquid passing becomes larger as it reaches the outer region.
[實施例] [Example]
實施例1 Example 1
準備具有與圖1所示之被研磨物保持用遊星輪之形態相同之形狀之被研磨物保持用遊星輪。所準備之被研磨物保持用遊星輪之材質為不鏽鋼,將其厚度設為774μm。該被研磨物保持用遊星輪係為了防止被研磨物外緣部之損傷而於被研磨物保持孔之內周緣部設置由芳香族聚醯胺樹脂形成之樹脂製之框。 A star wheel for holding an object having the same shape as that of the star wheel for holding an object shown in FIG. 1 is prepared. The material of the prepared star wheel for holding an object to be polished is stainless steel, and its thickness is set to 774 μm. In order to prevent damage to the outer edge portion of the object to be polished, the caster wheel system for holding the object is provided with a resin frame made of an aromatic polyurethane resin on the inner peripheral portion of the object holding hole.
使用上述被研磨物保持用遊星輪進行Φ300mm之矽晶圓之拋光試驗。研磨機、研磨加工條件如下所述。 A polishing test of a silicon wafer having a diameter of 300 mm was performed using the above-mentioned planetary wheel for holding an object to be polished. The polishing machine and polishing processing conditions are as follows.
研磨機:SpeedFam Co.,Ltd.公司製造之雙面研磨裝置 Grinder: Double-side grinding device manufactured by SpeedFam Co., Ltd.
研磨布:NITTA HAAS公司製造MH(註冊商標)系列 Abrasive cloth: MH (registered trademark) series made by NITTA HAAS
研磨劑:Fujimi Incorporated公司製造GLANZOX(註冊商標)系列 Abrasive: GLANZOX (registered trademark) series manufactured by Fujimi Incorporated
上定盤旋轉:逆時針方向 Upper platen rotation: counterclockwise
下定盤旋轉:順時針方向 Lower platen rotation: clockwise
內齒輪旋轉:順時針方向 Internal gear rotation: clockwise
太陽齒輪旋轉:順時針方向 Sun gear rotation: clockwise
負載(上定盤負載):面壓10kPa Load (upper plate load): 10kPa surface pressure
加工時間:30分鐘 Processing time: 30 minutes
對以上述條件進行拋光加工後之矽晶圓之直徑方向之厚度分佈進行測定。測定裝置使用公知之厚度測定裝置(Hamamatsu Photonics公司製造)。將測定結果示於圖6。表示直徑方向之厚度分佈之P-V(Peak to Valley,峰對谷)值、即表示工件之最大測定值與最小測定值之差之值為0.048μm。根據圖6之曲線圖可知,使用本發明之被研磨物保持用遊星輪進行研磨後之矽晶圓幾乎未確認到直徑方向之偏差,又,亦未確認到面塌陷等現象。0.048μm之P-V值為極其優異之值。 The thickness distribution in the diameter direction of the silicon wafer after polishing processing under the above conditions was measured. As a measuring device, a known thickness measuring device (made by Hamamatsu Photonics) was used. The measurement results are shown in FIG. 6. The P-V (Peak to Valley) value, which represents the thickness distribution in the diameter direction, that is, the difference between the maximum measured value and the minimum measured value of the workpiece is 0.048 μm. According to the graph of FIG. 6, it can be seen that almost no deviation in the diameter direction of the silicon wafer after polishing using the planetary wheel for holding an object to be polished according to the present invention, nor a phenomenon such as a surface collapse, was confirmed. The P-V value of 0.048 μm is an extremely excellent value.
比較例1 Comparative Example 1
使用圖3所示之習知型被研磨物保持用遊星輪,於與實施例1完全相同之條件下進行研磨實驗。本比較例中所使用之被研磨物保持用遊星輪之規格除了研磨液通過孔之形狀及配置以外,均與實施例1中所使用之本發明之被研磨物保持用遊星輪相同。 A conventional grinding wheel for holding an object to be polished shown in FIG. 3 was used to perform a grinding experiment under the same conditions as in Example 1. The specifications of the caster wheel for holding an object to be polished used in this comparative example are the same as the caster wheel for holding an object to be polished according to the present invention used in Example 1, except for the shape and arrangement of the polishing liquid passage holes.
對使用該被研磨物保持用遊星輪進行拋光加工後之矽晶圓之直徑方向之厚度分佈進行測定。將測定結果示於圖7。又,所獲得之P-V值為0.524μm。根據圖7之曲線圖可知,確認到外周部較中心部薄之傾向。明顯出現所謂之面塌陷現象。又,P-V值為0.524μm,顯示較實施例1而言差10倍以上之數值。又,確認到直徑方向之厚度之偏差整體上大於實施例1。 The thickness distribution in the diameter direction of the silicon wafer after the polishing process using the caster wheel for holding an object to be polished was measured. The measurement results are shown in FIG. 7. The obtained P-V value was 0.524 μm. As can be seen from the graph of FIG. 7, the tendency of the outer peripheral portion to be thinner than the central portion was confirmed. The so-called face collapse phenomenon is apparent. The P-V value was 0.524 μm, which was a value that was 10 times or more worse than that in Example 1. In addition, it was confirmed that the variation in the thickness in the diameter direction was larger than that in Example 1.
比較例2 Comparative Example 2
使用圖4所示之習知型被研磨物保持用遊星輪,於與實施例1完全相同之條 件下進行研磨實驗。本比較例中所使用之被研磨物保持用遊星輪之規格除了研磨液通過孔之直徑及配置以外,均與實施例1中所使用之本發明之被研磨物保持用遊星輪相同。 A conventional grinding wheel for holding an object to be polished shown in Fig. 4 was used to perform a grinding experiment under the same conditions as in Example 1. The specifications of the caster wheel for holding an object to be polished used in this comparative example are the same as the caster wheel for holding an object to be polished according to the present invention used in Example 1, except for the diameter and arrangement of the polishing liquid passage holes.
針對該習知型被研磨物保持用遊星輪之被研磨物保持用之保持孔1,劃出具有與各保持孔相同之中心點之假想同心圓2時,即便於該假想同心圓之內周配置Φ50mm之研磨液通過用小孔及Φ100mm之研磨液通過用小孔,於假想同心圓之內周配置Φ50mm之研磨液通過用小孔6且以重疊於假想同心圓之圓周上之方式配置Φ100mm之研磨液通過用小孔5,或以重疊於假想同心圓之圓周上之方式配置Φ50mm及Φ100mm之研磨液通過用小孔等以任意半徑設定假想同心圓,亦成為不滿足本發明之構成要求之配置。 When the holding hole 1 for holding an object to be ground of the conventional wheel for holding an object to be ground is drawn, imaginary concentric circles 2 having the same center point as each holding hole are drawn, even on the inner periphery of the imaginary concentric circle. Dispose Φ50mm abrasive liquid through the small hole and Φ100mm abrasive liquid through the small hole, and arrange Φ50mm abrasive liquid on the inner periphery of the imaginary concentric circle by using the small hole 6 and arrange Φ100mm so as to overlap the circumference of the imaginary concentric circle. The polishing liquid of Φ50mm and Φ100mm is arranged by using small holes 5 or superimposed on the circumference of an imaginary concentric circle. By setting a imaginary concentric circle with an arbitrary radius by using a small hole, it also does not meet the constitutional requirements of the present invention. Its configuration.
於圖4所示之被研磨物保持用遊星輪之情形時,複數個保持孔1之半徑為150mm,具有相同中心點之假想同心圓2之半徑與本發明同樣地設為210mm。將自保持孔之周緣至假想同心圓之內周緣為止之區域設為A區域,將相較該A區域更靠外側之區域設為B區域。並且,若於保持孔以外之區域穿孔Φ50mm之研磨液通過用小孔6及Φ100mm之研磨液通過用小孔5,則將Φ50mm及Φ100mm之研磨液通過用小孔以重疊於假想同心圓之圓周上之方式配置,即,以橫跨A區域與B區域之方式穿孔Φ50mm及Φ100mm之研磨液通過用小孔。 In the case of a star wheel for holding an object to be polished as shown in FIG. 4, the radius of the plurality of holding holes 1 is 150 mm, and the radius of an imaginary concentric circle 2 having the same center point is 210 mm as in the present invention. The area from the peripheral edge of the holding hole to the inner peripheral edge of the imaginary concentric circle is set as the A area, and the area further outside than the A area is set as the B area. In addition, if the Φ50mm polishing liquid passes through the small hole 6 and Φ100mm polishing liquid passes through the small hole 5 in the area other than the holding hole, the Φ50mm and Φ100mm polishing liquid passes through the small hole to overlap the circumference of the imaginary concentric circle. It is configured in the above manner, that is, a small hole of Φ50mm and Φ100mm is used for perforating the polishing liquid passing through the area A and the area B.
由於以橫跨A區域與B區域之方式穿孔Φ50mm之研磨液通過用小孔6及Φ100mm之研磨液通過用小孔,故而成為參考值,但Φ50mm之研磨液通過孔成為矽晶圓之半徑150mm之33.33%。又,Φ100mm之研磨液通過孔成為矽晶圓之半徑150mm之66.67%。 The Φ50mm polishing liquid passes through the small hole 6 and Φ100mm polishing liquid passes through the small hole, so it becomes a reference value, but the Φ50mm polishing liquid passing hole becomes the radius of the silicon wafer 150mm. 33.33%. In addition, the Φ100mm polishing liquid passing hole becomes 66.67% of the 150mm radius of the silicon wafer.
對使用該被研磨物保持用遊星輪進行拋光加工後之矽晶圓之直徑方向之厚度分佈進行測定。將測定結果示於圖8。又,所獲得之P-V值為0.206 μm。根據圖8之曲線圖可知,成為矽晶圓外周部較中心部薄之凸形狀。又,於外周部出現面塌陷現象。又,P-V值為0.206μm,顯示較實施例1而言差4倍以上之數值。又,確認到直徑方向之厚度之偏差整體上大於實施例1。 The thickness distribution in the diameter direction of the silicon wafer after the polishing process using the caster wheel for holding an object to be polished was measured. The measurement results are shown in FIG. 8. The obtained P-V value was 0.206 μm. As can be seen from the graph of FIG. 8, the outer peripheral portion of the silicon wafer has a convex shape that is thinner than the central portion. In addition, a surface collapse phenomenon occurred at the outer periphery. The P-V value was 0.206 μm, which was a value that was 4 times or more worse than that of Example 1. In addition, it was confirmed that the variation in the thickness in the diameter direction was larger than that in Example 1.
比較例3 Comparative Example 3
使用圖5所示之習知型被研磨物保持用遊星輪,於與實施例1完全相同之條件下進行研磨實驗。又,本比較例中所使用之被研磨物保持用遊星輪之規格亦係除了研磨液通過孔之直徑及配置以外,均與實施例1中所使用之本發明之被研磨物保持用遊星輪相同。 A conventional grinding wheel for holding an object to be polished shown in FIG. 5 was used to perform a polishing experiment under the same conditions as in Example 1. In addition, the specifications of the caster wheel for holding an object to be polished used in this comparative example are the same as those of the caster wheel for holding an object to be polished according to the present invention used in Example 1, except for the diameter and arrangement of the polishing liquid passage hole. the same.
針對該習知型被研磨物保持用遊星輪之被研磨物保持用之保持孔1,劃出具有與各保持孔相同之中心點之假想同心圓2時,於假想同心圓之內側及外側之區域之兩者配置Φ30mm之研磨液通過孔,即便以任意半徑設定假想同心圓,亦成為不滿足本發明之構成要求之配置。 When the holding hole 1 for holding the ground object of the conventional wheel for holding the object to be ground is drawn, the imaginary concentric circles 2 having the same center point as the holding holes are drawn. The arrangement of the Φ30mm polishing liquid passage holes in both areas is an arrangement that does not satisfy the constitutional requirements of the present invention even if an imaginary concentric circle is set at an arbitrary radius.
於圖5所示之被研磨物保持用遊星輪之情形時,與圖4同樣地,3個保持孔之半徑為150mm,具有相同中心點之假想同心圓2之半徑與本發明同樣地設為210mm。將自保持孔之周緣至假想同心圓之內周緣為止之區域設為A區域,將相較該A區域更靠外側之區域設為B區域。並且,於作為保持孔以外之區域之A區域及B區域,以與相鄰之小孔之間隔成為22mm之方式穿孔Φ30mm之研磨液通過用小孔7。 In the case of a planetary wheel for holding an object to be polished as shown in FIG. 5, as in FIG. 4, the radius of the three holding holes is 150 mm, and the radius of the imaginary concentric circle 2 having the same center point is set as in the present invention. 210mm. The area from the peripheral edge of the holding hole to the inner peripheral edge of the imaginary concentric circle is set as the A area, and the area further outside than the A area is set as the B area. In addition, in the areas A and B, which are areas other than the holding holes, a polishing liquid passing hole 7 having a diameter of 30 mm is punched so that the interval between the adjacent holes is 22 mm.
於A區域及B區域穿孔之複數個研磨液通過用小孔之直徑均為Φ30mm,故而成為作為被研磨物之矽晶圓之半徑150mm之20%。 The diameters of the plurality of polishing liquids perforated in the A area and the B area are Φ30mm, so they become 20% of the 150mm radius of the silicon wafer as the object to be polished.
對使用該被研磨物保持用遊星輪進行拋光加工後之矽晶圓之直徑方向之厚度分佈進行測定。將測定結果示於圖9。又,所獲得之P-V值為0.231μm。根據圖9之曲線圖可知,成為矽晶圓外周部較中心部薄之凸形狀。又,於外周部出現面塌陷現象。又,P-V值為0.231μm,顯示較實施例1而言差約5倍 之數值。又,確認到直徑方向之厚度之偏差整體上大於實施例1。 The thickness distribution in the diameter direction of the silicon wafer after the polishing process using the caster wheel for holding an object to be polished was measured. The measurement results are shown in FIG. 9. The obtained P-V value was 0.231 μm. It can be seen from the graph of FIG. 9 that the outer peripheral portion of the silicon wafer has a convex shape that is thinner than the central portion. In addition, a surface collapse phenomenon occurred at the outer periphery. The P-V value was 0.231 µm, which was a value about 5 times worse than that of Example 1. In addition, it was confirmed that the variation in the thickness in the diameter direction was larger than that in Example 1.
如上所述,將實施例1與比較例1~3之結果進行比較可見,其品質之差明顯。比較例1之厚度測定之結果不及實施例1之厚度測定之結果證實了,若為比較例1中所使用之被研磨物保持用遊星輪,則研磨用研磨液向上下兩定盤面之擴散、尤其是向下定盤側之流入不順暢,而研磨液之分佈不均。即,成為本發明之被研磨物保持用遊星輪特別改善了拋光後之被研磨物之形狀精度、具體而言厚度之偏差,解決了習知之被研磨物保持用遊星輪所具有之問題。 As described above, when the results of Example 1 and Comparative Examples 1 to 3 are compared, it can be seen that there is a significant difference in quality. The results of the thickness measurement of Comparative Example 1 were inferior to the results of the thickness measurement of Example 1. It was confirmed that if it is a star wheel for holding an object to be polished used in Comparative Example 1, the polishing liquid for polishing diffuses up and down the two fixed disk surfaces, In particular, the inflow to the lower plate side was not smooth, and the distribution of the polishing liquid was uneven. In other words, the caster wheel for holding an object to be polished according to the present invention particularly improves the shape accuracy and thickness deviation of the object after polishing, and solves the problems of the conventional caster wheel for holding objects to be polished.
[產業上之可利用性] [Industrial availability]
根據本發明,本發明之被研磨物保持用遊星輪解決了習知之被研磨物保持用遊星輪所具有之問題,即,研磨液向上下兩定盤面之供給不均,研磨用研磨液向被研磨物背面(下定盤側)之流入不充分,因此係能有效地解決無法滿足加工後之被研磨物之形狀精度(平坦度)之問題點。根據本發明之被研磨物保持用遊星輪,獲得矽晶圓等被研磨物之上下兩面均成為精緻且無不均之面,且平坦度優異之被研磨物,對被研磨物之品質提高及產率提高起到很大幫助。進而亦有研磨液之消耗量變少之效果,為產業界做出巨大貢獻。 According to the present invention, the planetary wheel for holding abrasives of the present invention solves the problem of the conventional planetary wheel for holding abrasives, that is, the uneven supply of the polishing liquid to the upper and lower fixed disk surfaces, and the polishing liquid for polishing is applied to the substrate. The inflow of the back surface of the abrasive (the lower plate side) is insufficient, so it can effectively solve the problem that the shape accuracy (flatness) of the object to be polished cannot be satisfied after processing. According to the planetary wheel for holding an object to be polished according to the present invention, the top and bottom surfaces of the object to be polished, such as silicon wafers, are fine and non-uniform surfaces, and the object is excellent in flatness. The quality of the object to be polished is improved and Increased productivity has helped a lot. In addition, it has the effect of reducing the consumption of polishing liquid, and has made great contributions to the industry.
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