TWM393806U - Light emitting diode lead frame - Google Patents
Light emitting diode lead frame Download PDFInfo
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- TWM393806U TWM393806U TW099210241U TW99210241U TWM393806U TW M393806 U TWM393806 U TW M393806U TW 099210241 U TW099210241 U TW 099210241U TW 99210241 U TW99210241 U TW 99210241U TW M393806 U TWM393806 U TW M393806U
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- lead frame
- led lead
- rubber seat
- seat
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052709 silver Inorganic materials 0.000 claims abstract description 25
- 239000004332 silver Substances 0.000 claims abstract description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 39
- 230000002209 hydrophobic effect Effects 0.000 claims description 24
- 239000000126 substance Substances 0.000 claims description 23
- 238000007747 plating Methods 0.000 claims description 20
- 239000004809 Teflon Substances 0.000 claims description 11
- 229920006362 Teflon® Polymers 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 239000004033 plastic Substances 0.000 claims description 10
- 125000001153 fluoro group Chemical group F* 0.000 claims description 8
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 125000006850 spacer group Chemical group 0.000 claims description 2
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 2
- GQJXVHYUQPXZOL-UHFFFAOYSA-N 3,3,4,4,5,5,6,6,6-nonafluorohexane-1-thiol Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)CCS GQJXVHYUQPXZOL-UHFFFAOYSA-N 0.000 claims 2
- SASVQWHIDVVXAW-UHFFFAOYSA-N FC(CCCCCCCS)(F)F Chemical compound FC(CCCCCCCS)(F)F SASVQWHIDVVXAW-UHFFFAOYSA-N 0.000 claims 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 239000002991 molded plastic Substances 0.000 claims 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 239000005871 repellent Substances 0.000 abstract description 2
- 230000004308 accommodation Effects 0.000 abstract 2
- 229940009188 silver Drugs 0.000 abstract 2
- 230000002940 repellent Effects 0.000 abstract 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 6
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001568 sexual effect Effects 0.000 description 2
- GNDNKCXEGXLUQQ-UHFFFAOYSA-N 1,1,1,2,2,3,3,4,4-nonafluoro-6-(3,3,4,4,5,5,6,6,6-nonafluorohexylsulfanyl)hexane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)CCSCCC(F)(F)C(F)(F)C(F)(F)C(F)(F)F GNDNKCXEGXLUQQ-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
五、新型說明: 【新型所屬之技術領域】 [0001] [0002] [0003] 本創作涉及一種發光二極管導線架,尤其係一種可防止 水氣滲入之表面黏著型發光二極管導線架。 【先前技術】 發光二極官是一種固態的半導體元件,不同於鎢絲燈泡 發光原理,屬於冷光發光,只需極小電流就可以發光。 發光二極管不但具有壽命長、省電、耐用、耐震、牢靠 、適合量產、體積小及反應快等優點,更普遍應用在生 活中多項產品’如:手機、PDA產品的背光源、信息與消 費性電子產品的指示燈、工業*儀表設備、汽車用儀表指 示燈與煞車燈及大型廣告看板等^ ‘ 習知之表面黏著型發光二極管導線通常包括一膠座、兩 個金屬接腳、一發光晶片及二條導線。膠座具有一中空 狀之功能區,金屬接腳埋設於膠座中,其中金屬接腳部 分暴露於功能區底部,部分延伸出膠座相對兩側,並且 沿膠座外側彎折至膠座底面以作為後續製程之接點。在 金屬接腳表面上設有鍍銀層,通過鍍銀層將發光晶片發 出的光反射出去。膠座於功能區中形成間隔區塊以區隔 兩金屬接腳之極性。發光晶片設置於功能區内後,通過 兩條導線將發光晶片與兩個金屬接腳分別連接,並於膠 座之功能區内覆蓋一層可透光的環氧樹脂以封裝該發光 二極管導線架。當給露出於膠座外的金屬接腳施加電壓 即可使發光晶片發光。 表單編號Α0101 第3頁/共15頁 M393806 [0004] 然,此發光二極管導線架之膠座與金屬接腳之間會產生 間隙,容易導致外部環境周圍的水氣及硫化物沿此間隙 擴散到功能區内部,當水氣及硫化物共同存在時,水氣 會加速硫化物把鍍銀層反應成黑色的硫化銀,當鍍銀層 變黑後,發光晶片的光會在鍍銀層反射率下降的情況下 降低亮度,最終會導致發光二極管導線架失效。 [0005] 請參閱第一圖所示,揭示了一種改善上述發光二極管導 線架,其在金屬接腳2’與膠座1’結合的表面設置有複數 凹槽20’,通過增加水氣通過的路徑來延緩鍍銀層變黑的 速度。然,該發光二極管導線架長時間後,鍍銀層仍會 變黑,發光晶片的亮度仍會降低。 [0006] 鑒於此,實有必要克服上述發光二極管導線架之缺陷。 【新型内容】 [0007] 本創作所解決之技術問題係提供一種防止水氣滲入之發 光二極管導線架。 [0008] 為解決前述技術問題,本創作提供一種發光二極管導線 架,包括設有中空功能區之膠座及複數金屬接腳。金屬 接腳間隔暴露於功能區内,並延伸至膠座之外,該金屬 接腳朝向功能區之表面定義為上表面與上表面相對之表 面定義為下表面,所述上表面設有鍍銀層,在鍍銀層上 設有疏水性物質層。 [0009] 與習知技術相比,本創作由於疏水性物質層對水具有排 斥性,可以阻止水氣通過金屬接腳與膠座之間的間隙進 入功能區,如此可以防止發光二極管導線架之鍍銀層變 表單编號A0101 第4頁/共15頁 M393806 黑,提高發光二極管導線架之使用壽命。 【實施方式】 [0010] 參閲第二圖所示,本創作為一種表面黏著型發光二極管 導線架,其包括一絕緣之膠座1及固持於膠座1中之兩金 屬接腳2。
[0011] 參閲第二圖至第三圖所示,膠座1大致呈長方體,通過塑 膠射出成型於金屬接腳2上。膠座1外側形成外膠壁11, 膠座1中部凹設形成中空狀之功能區10,該功能區10為長 方形狀,其亦可為圓形狀、橢圓形狀或其它多邊形狀。
[0012] 金屬接腳2埋設於膠座1中,每一金屬接腳2均有部分可見 於功能區10底部,並通過導線4與放置在其中一個金屬接 腳2上的發光晶片3連接,每一金屬棲腳2從功能區10向膠 座1外部延伸,並彎折至膠座1之外膠壁11之底部形成彎 折部20,該彎折部20低於膠座1之底面以做為後續製程之 接點。本創作之金屬接腳2係通過銅合金導電金屬以衝壓 成型方式形成,其中將金屬接腳2朝向功能區10之表面定 義為上表面,與上表面相對的表面定義為下表面。參閱 第四圖所示,在金屬接腳2的上、下表面設有鍍銀層21, 以反射發光晶片3所發出的光,該鍍銀層21也可以僅設置 在金屬接腳2的上表面。在鍍銀層21的上面又設有疏水性 物質層22,以防止外部環境中的水氣及硫化物通過膠座1 與金屬接腳2之間之間隙6進入功能區10内。所述疏水性 物質層22也可以僅設置在膠座1與金屬接腳2之結合處。 [0013] 在本創作中,疏水性物質層22即一種對水具有排斥性的 表單編號A0101 第5頁/共15頁 M393806 物質層,其可以讓水氣及硫化物無法通過膠座1與金屬接 腳2之間之間隙6,把水氣及硫化物阻隔在發光二極管導 線架外。該疏水性物質層2 2係由一種含有多個氟原子之 物質組成,此多個氟原子物質包括 3,3,4,4,5,5,6,6,7,7,8,8,8-十三氟-1-正辛硫醇, 其化學式為:CF3(CF2)4CF2〜SH或 3, 3, 4, 4, 5, 5, 6, 6, 6-九氟-1-正己硫醇,其化學式為: CF3(CF2)3CH2CH2SH。正因為此氟原子的物質結構中具 有硫醇基團,此基團會與鍍銀層21之表面作用,使鍍銀 層21表面形成一層疏水性物質層22。該疏水性物質層22 之厚度很薄,大概在1〜l〇nm的範圍内,因此不會影響發 光二極管導線架封裝的固晶和打線製程。由於該疏水性 物質層22之表面張力比水的表面張力小很多,所以疏水 效果明顯。 [0014] 參閱第五圖所示,其為本創作的另一實施較佳方式,其 與上述發光二極管導線架類似,在金屬接腳2的鍍銀層21 上設置疏水性物質層22,而且進一步在膠座1中添加鐵氟 龍5。鐵氟龍5係一種含氟之高分子物質,其與成型膠座1 之塑膠混合後一起射出成型,使鐵氟龍5均勻分散在膠座 1中,其中,鐵氟龍5添加在膝座1中之重量比的範圍為3 〜10%。此種含有鐵氟龍5之膠座1的表面張力比水的表面 張力小很多,所以疏水效果明顯。 [0015] 本創作利用金屬接腳2表面之疏水性物質層2 2的疏水特性 以及膠座1表面的疏水特性,讓金屬接腳2與膠座1之間 之間隙6具有疏水特性,讓水氣無法透過間隙6進入功能 表單編號A0101 第6頁/共15頁 M393806 區10中,如此就會使發光二極管導線架之鍍銀層21不易 變黑,提高其使用壽命。 [0016] 綜上所述,本創作確已符合新型專利之要件,爰依法提 出專利申請。惟,以上所述者僅係本創作之較佳實施方 式,本創作之範圍並不以上述實施方式為限舉凡熟習本 案技藝之人士援依本創作之精神所作之等妓修飾或變化 ,皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】
[0017] 第一圖為本創作習知發光二極管導線架之立體圖; [0018] 第二圖為本創作發光二極管導線架之立體單; [0019] 第三圖為沿第二圖中之11 I - 11 I線之剖視圖; [0020] 第四圖為第三圖框Α部分之局部放大圖; [0021] 第五圖為本創作另一實施例之框A部分之局部放大圖。 【主要元件符號說明】
[0022] 膠座:1 [0023] 功能區:10 [0024] 外膠壁:11 [0025] 金屬接腳:2 [0026] 彎折部:20 [0027] 鍍銀層:21 [0028] 疏水性物質層:22 表單編號A0101 第7頁/共15頁 M393806 [0029] 發光晶片. [0030] 導線:4 [0031] 鐵氟龍:5 [0032] 間隙:6 表單編號A0101 第8頁/共15頁
Claims (1)
- M393806 六、申請專利範圍: 1 . 一種發光二極管導線架,其包括: 膠座,設有中空之功能區;及 複數金屬接腳,間隔暴露於功能區内,並延伸至膠座之外 ,該金屬接腳朝向功能區之表面定義為上表面,與上表面 相對之表面定義為下表面,所述上表面設有鍍銀層,在鍍 銀層上設有疏水性物質層。 2.如申請專利範圍第1項所述之發光二極管導線架,其中所 述疏水性物質層的表面張力比水的表面張力小。 3 .如申請專利範圍第2項所述之發光二極管導線架,其中所 述疏水性物質層由一種含有多個氟原子的"物質組成,該多 個氟原子的物質包括3, 3, 4, 4, 5, 5, 6, 6, 7, 7, 8, 8, 8-十 三氟-1-正辛硫醇,其化學式為:CF3(CF2)4CF2〜SH或 3, 3, 4, 4, 5, 5, 6, 6,6-九氟-1-正己硫醇,其化學式為: CF3(CF2)3CH2CH2SH。 4. 如申請專利範圍第3項所述之發光二極管導線架,其中所 述疏水性物質層之厚度範圍為1〜10nm。 5. 如申請專利範圍第1項所述之發光二極管導線架,其中所 述膠座中包含鐵氟龍。 6. 如申請專利範圍第5項所述之發光二極管導線架,其中鐵 氟龍與成型膠座之塑膠一起射出成型為膠座。 7. 如申請專利範圍第6項所述之發光二極管導線架,其中鐵 氟龍添加在膠座中之重量百分比的範圍為3〜10 %。 8. 如申請專利範圍第5項所述之發光二極管導線架,其中所 述膠座之表面張力比水的表面張力小。 099210241 表單編號A0101 第9頁/共15頁 0992030841-0 M393806 9 . 一種發光二極管導線架,其包括: 膠座,設有中空之功能區,膠座中含有鐵氟龍;及 複數金屬接腳,間隔設置在功能區,並延伸至膠座之外, 該金屬接腳設有鍍銀層,在金屬接腳與膠座結合處的鍍銀 層上設有疏水性物質層。 10 .如申請專利範圍第9項所述之發光二極管導線架,其中所 述疏水性物質層及所述膠座的表面張力均小於水的表面張 力。 11 .如申靖專利範圍第10項所述之發光二極管導線架,其中所 述疏水性物質層由一種含有多個氟原子的物質組成,此多 個氟原子的物質結構中具有硫醇基播。 12 .如申請專利範圍第11項所述之發光二極管導線架,其中所 述多個氟原子的物質包括 3,3,4,4,5,5,6,6,7,7, 8,8,8-十三氟-1-正辛硫醇, 其化學式為:CF3(CF2)4CF2〜SH或 3, 3, 4, 4, 5, 5, 6, 6, 6-九氟-1-正己硫醇,其化學式為: CF3(CF2)3CH2CH2SH。 13.如申請專利範圍第9項所述之發光二極管導線架,其中鐵 、 氟龍與成型膠座之塑膠一起射出成型為膠座。 14 .如申請專利範圍第9項所述之發光二極管導線架,其中鐵 氟龍添加在膠座中之重量百分比的範圍為3~10 %。 15 .如申請專利範圍第9項所述之發光二極管導線架,其中所 述金屬接腳從功能區向膠座外部彎折至膠座之底部。 16 .如申請專利範圍第9項所述之發光二極管導線架,其中所 述鍍銀層設置在金屬接腳朝向功能區之表面用以反光。 099210241 表單編號A0101 第10頁/共15頁 0992030841-0
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TW099210241U TWM393806U (en) | 2010-05-31 | 2010-05-31 | Light emitting diode lead frame |
US13/118,486 US20110291152A1 (en) | 2010-05-31 | 2011-05-30 | Led lead frame with water-repellent layer |
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TW099210241U TWM393806U (en) | 2010-05-31 | 2010-05-31 | Light emitting diode lead frame |
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Cited By (2)
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TWI451603B (zh) * | 2011-03-07 | 2014-09-01 | Hon Hai Prec Ind Co Ltd | 發光晶片導線架 |
TWI488345B (zh) * | 2010-12-03 | 2015-06-11 | Hon Hai Prec Ind Co Ltd | 發光二極管導線架 |
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US9685592B2 (en) | 2009-01-14 | 2017-06-20 | Cree Huizhou Solid State Lighting Company Limited | Miniature surface mount device with large pin pads |
CN102934228B (zh) | 2011-03-02 | 2017-09-01 | 惠州科锐半导体照明有限公司 | 发光二极管封装件及发光二极管 |
JP2013004815A (ja) * | 2011-06-17 | 2013-01-07 | Sony Corp | 光源回路ユニットおよび照明装置、並びに表示装置 |
AT513747B1 (de) * | 2013-02-28 | 2014-07-15 | Mikroelektronik Ges Mit Beschränkter Haftung Ab | Bestückungsverfahren für Schaltungsträger und Schaltungsträger |
US10522444B2 (en) | 2013-03-11 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Surface treatment method and apparatus for semiconductor packaging |
JP2016001702A (ja) * | 2014-06-12 | 2016-01-07 | 大日本印刷株式会社 | 樹脂付リードフレームおよびその製造方法、ならびにledパッケージおよびその製造方法 |
WO2017056321A1 (ja) * | 2015-10-02 | 2017-04-06 | 大日本印刷株式会社 | 樹脂付リードフレームおよびその製造方法、ならびにledパッケージおよびその製造方法 |
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DE102005059524A1 (de) * | 2005-09-30 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Gehäuse für ein elektromagnetische Strahlung emittierendes optoelektronisches Bauelement, Bauelement und Verfahren zum Herstellen eines Gehäuses oder eines Bauelements |
JP2007266562A (ja) * | 2006-03-03 | 2007-10-11 | Matsushita Electric Ind Co Ltd | 配線部材、樹脂付金属部品及び樹脂封止半導体装置、並びにこれらの製造方法 |
-
2010
- 2010-05-31 TW TW099210241U patent/TWM393806U/zh not_active IP Right Cessation
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2011
- 2011-05-30 US US13/118,486 patent/US20110291152A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI488345B (zh) * | 2010-12-03 | 2015-06-11 | Hon Hai Prec Ind Co Ltd | 發光二極管導線架 |
TWI451603B (zh) * | 2011-03-07 | 2014-09-01 | Hon Hai Prec Ind Co Ltd | 發光晶片導線架 |
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