TWM366757U - AC LED packaging structure - Google Patents

AC LED packaging structure Download PDF

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Publication number
TWM366757U
TWM366757U TW098207040U TW98207040U TWM366757U TW M366757 U TWM366757 U TW M366757U TW 098207040 U TW098207040 U TW 098207040U TW 98207040 U TW98207040 U TW 98207040U TW M366757 U TWM366757 U TW M366757U
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Taiwan
Prior art keywords
package structure
insulator substrate
led
electrode holder
emitting diode
Prior art date
Application number
TW098207040U
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English (en)
Inventor
Pei-Xuan Lan
Rui-Hong Chen
Ren-Hua Yang
Yu-Bing Lan
Original Assignee
Forward Electronics Co Ltd
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Filing date
Publication date
Application filed by Forward Electronics Co Ltd filed Critical Forward Electronics Co Ltd
Priority to TW098207040U priority Critical patent/TWM366757U/zh
Publication of TWM366757U publication Critical patent/TWM366757U/zh
Priority to US12/588,326 priority patent/US20100270575A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Description

M366757 五、新型說明： 【新型所屬之技術領域】 本創作係關於一種交流發光二極體（Alternate Current Light Emitting Diode ; AC LED)，尤指一種具耐高壓特性 5 之交流發光二極體封裝結構β 【先前技術】 參考圖1，係習知發光二極體封裝結構示意圖。圖中 示出習知發光二極體封裝結構主要是在一散熱塊（slug)l上 10 承載一LED晶粒（chip)2，並從LED晶粒2導接出兩條金線3 以各自電性連接於正極支架4與負極支架5。上述正極支架4 與負極支架5用以接置一電源（圖未示）使LED裝置運作發 光。 AC LED產品於運作時因其中LED晶粒係直接接觸市 15 電所供應之交流電壓，相較於以往直流發光二極體（DC LED)產生了 一潛在問題，即可能會有高壓擊穿LED晶粒的 情形，如此會導致當人體碰觸到LED裝置本體時觸電。 以UL耐高壓安規為例，其規範之耐高壓算式： (1000+2U)伏特（Volt)，其中U為裝置工作電壓。因此當電 20器裝置要求輸入電壓為120 Vrms時，需耐高壓1.24 KV。由 於一般DC LED之封裝不須考慮此耐高壓問題（因為經額外 控制電路將交流供電轉換成直流型態、並降壓至例如 3.5V) ’而目前AC LED又大抵沿襲DC LED之封裝方式，是 故為了解決上述問題，急需一種針對AC LED封裝結構之改 3 M366757 良設計，以期能符合相關的安全規範，有利於廠商之產品 銷售。 【新型内容】 5 本創作之交流發光二極體封裝結構包括一散熱塊、一 交流發光二極體模組、一正極支架、一負極支架、及一絕 緣子基板，其中交流發光二極體模組電性連接於正極支架 與負極支架，絕緣子基板位於交流發光二極體模組與散熱 塊之間，且絕緣子基板具有耐電壓值大於1000V之特性。 10 藉由上述改良封裝結構，交流發光二極體產品之耐高 壓特性提升至符合目前安全規範（如UL、CE、TUV、FCC、 CSA、PSE、BSMI等規範），可避免LED擊穿受損、危害人 體。 上述絕緣子基板可以是熱傳導係數大於100W/m · K， 15 例如矽絕緣子基板，更佳為鑽石絕緣子基板。 上述交流發光二極體模組可以是單一交流發光二極 體晶粒、或者複數個相互串接或並聯之交流發光二極體晶 粒、或者複數個相互串接或並聯之直流發光二極體晶粒、 或者複數個相互串接或並聯之交流與直流發光二極體晶粒 20 混搭。上述絕緣子基板可以是單一絕緣子基板、或者相互 分散而對應複數交流發光二極體晶粒之複數個子基板區 塊。 上述交流發光二極體模組之晶粒基板厚度可以是100 微米以上（含）。上述散熱塊可以是銅散熱塊或導熱性佳之 M366757 散熱材製成之散熱塊。 【實施方式】 本創作主要將交流發光二極體晶粒與其承載座（亦為 5散熱塊）間的距離加大，以避免高壓電源於金線與二極體晶 粒流通時造成電弧導通承載座，形成人體接觸危安。 參考圖2，係本創作一較佳實施例之交流發光二極體 封裝結構示意圖。圖中示出一交流發光二極體封裝結構包 括一散熱塊11、一交流發光二極體模組12、一絕緣子基板 10丨5、一正極支架13、及一負極支架14。本例中，交流發光 二極體模組12是以複數個交流發光二極體晶粒m〜124相 互串接所構成，而絕緣子基板15包括複數個子基板區塊 151〜154對應於上述交流發光二極體晶粒丨以〜丨24。 上述複數絕緣子基板區塊151〜154形成在散熱塊11 I5上’並對應承載著複數交流發光二極體晶粒121〜丨24 ^各 交流發光二極體晶粒之間透過金線2〇電性連接，其中二最 外側之乂流發光—極體晶粒121，124亦各自透過金線21 22 電性連接到正極支架13及負極支架14。 特別的是，絕緣子基板15之耐電壓值大於ιοοον。同 20時’若考慮匹配散熱塊11( 一般為金屬材例如銅，熱傳導係 數約380W/m· K)的熱傳能力，則可還擇材料具有導熱良好 之特性者，較佳可選擇熱傳導係數大於丨〇〇 W/m · κ之材料 例如矽（約120W/m · K”更佳者可選擇鑽石材質。本實施 例中所採用之絕緣子基板15厚度大於1〇〇微米。 5 M366757 針對耐高壓問題，本創作亦建議另一種解決方案，亦 即將交流發光二極體晶粒之晶粒基板（一般為藍寶石基板Λ) 厚度由習知常用之100〜150微米提高至1〇〇微米以上（含）， 如此也能夠有效預防電弧導通之意外。可想而知，更佳的 5實施模式中，除了採用額外形成一絕緣子基板之封裝結構 外，亦同時採用增厚之晶粒基板，藉此更為確保抑制漏電 危險。 上述實施例僅係為了方便說明而舉例而已，本創作所 主張之權利範圍自應以申請專利範圍所述為準，而非僅限 10 於上述實施例。 【圖式簡單說明】 圖1係習知發光二極體封裝結構示意圖。 圖2係本創作一較佳實施例之交流發光二極體封裝結構示 15意圖。 LED晶粒2 正極支架4,13 交流發光二極體模組12 絕緣子基板15 子基板區塊151,152,153,154 【主要元件符號說明】 散熱塊1，11 金線3, 20,21，22 負極支架5，14 交流發光二極體晶粒 121,122,123,124

Claims (1)

  1. M366757 修正 _.—*·-^**°** '第98207040號，98年8月修正頁 ' 六、申請專利範圍 L 一種交流發光二極體封裝結構，包括有一散熱塊、 . 一交流發光二極體模組、一正極支架、及一負極支架，該 交流發光二極體模組電性連接於該正極支架與該負極支 5架； 其特徵在於： 該父流發光二極體封裝結構更包括一絕緣子基板，該 • 絕緣子基板位於該交流發光二極體模組與該散熱塊之間， ® 其中該絕緣子基板具有耐電壓值大於1000V之特性。 10 2.如申請專利範圍第1項所述之封裝結構，其中，該 絕緣子基板之熱傳導係數大K100w/m· κ。 3. 如申凊專利範圍第1項所述之封裝結構，其中，該 絕緣子基板為矽絕緣子基板。 4. 如申凊專利範圍第1項所述之封裝結構，其中，該 15 絕緣子基板為鑽石絕緣子基板。 5. 如申請專利範圍第1項所述之封裝結構，其中，該 Φ 父流發光二極體模組包括複數個相互串接之交流發光二極 體晶粒。 . 6·如申請專利範圍第5項所述之封裝結構，其中，該 2〇絕緣子基板包括複數個子基板區塊，對應於該複數個交流 發光二極體晶粒。 7·如申請專利範圍第i項所述之封裝結構，其中，該 絕緣子基板厚度為100微米以上。 8.如申請專利範圍帛i項所述之封裝結構，其中，該 7
    散熱塊為銅散熱塊。
    Y 8
TW098207040U 2009-04-27 2009-04-27 AC LED packaging structure TWM366757U (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW098207040U TWM366757U (en) 2009-04-27 2009-04-27 AC LED packaging structure
US12/588,326 US20100270575A1 (en) 2009-04-27 2009-10-13 AC LED package structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW098207040U TWM366757U (en) 2009-04-27 2009-04-27 AC LED packaging structure

Publications (1)

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TWM366757U true TWM366757U (en) 2009-10-11

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Application Number Title Priority Date Filing Date
TW098207040U TWM366757U (en) 2009-04-27 2009-04-27 AC LED packaging structure

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US (1) US20100270575A1 (zh)
TW (1) TWM366757U (zh)

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* Cited by examiner, † Cited by third party
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WO2012071795A1 (zh) * 2010-11-30 2012-06-07 乐健线路板（珠海）有限公司 带有绝缘微散热器的印刷电路板
DE102013101262A1 (de) * 2013-02-08 2014-08-14 Osram Opto Semiconductors Gmbh Optoelektronisches Leuchtmodul, optoelektronische Leuchtvorrichtung und Kfz-Scheinwerfer

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* Cited by examiner, † Cited by third party
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US7931390B2 (en) * 1999-02-12 2011-04-26 Fiber Optic Designs, Inc. Jacketed LED assemblies and light strings containing same
US6936855B1 (en) * 2002-01-16 2005-08-30 Shane Harrah Bendable high flux LED array
KR100623024B1 (ko) * 2004-06-10 2006-09-19 엘지전자 주식회사 고출력 ｌｅｄ 패키지
US8044418B2 (en) * 2006-07-13 2011-10-25 Cree, Inc. Leadframe-based packages for solid state light emitting devices
US20100102341A1 (en) * 2007-06-15 2010-04-29 Rohm Co., Ltd. Semiconductor light emitting device and method for manufacturing the same
JP5188120B2 (ja) * 2007-08-10 2013-04-24 新光電気工業株式会社 半導体装置

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