TWM246802U - Image sensor package with glass on chip configuration - Google Patents

Image sensor package with glass on chip configuration Download PDF

Info

Publication number
TWM246802U
TWM246802U TW092221246U TW92221246U TWM246802U TW M246802 U TWM246802 U TW M246802U TW 092221246 U TW092221246 U TW 092221246U TW 92221246 U TW92221246 U TW 92221246U TW M246802 U TWM246802 U TW M246802U
Authority
TW
Taiwan
Prior art keywords
glass
wafer
area
patent application
image
Prior art date
Application number
TW092221246U
Other languages
Chinese (zh)
Inventor
Ming-Liang Huang
Yeong-Ching Chao
John Liu
Yau-Rung Li
Original Assignee
Chipmos Technologies Inc
Chipmos Technologies Bermuda C
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chipmos Technologies Inc, Chipmos Technologies Bermuda C filed Critical Chipmos Technologies Inc
Priority to TW092221246U priority Critical patent/TWM246802U/en
Publication of TWM246802U publication Critical patent/TWM246802U/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4824Connecting between the body and an opposite side of the item with respect to the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73215Layer and wire connectors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Description

M246802M246802

四、創作說明(l) 【新型所屬之技術領域】 特別係有關於 之影像感測器 本創作係有關於一種影像感測器封裝, 一種玻璃在晶片上〔glass 〇ri chip,g〇C〕 封裝。 【先前技術】 隨著科技的發展,愈來愈多的個人化手攜式電子 口 都會使用到影像感測器,例如數位相機、數 2 ;及個人數…〔而〕等,習知之影像感:器=、以手 感測擷取光學影像訊號,並將光學影像訊號轉換成電 號傳遞至電路基板,使光學影像訊號可加以辨識、處理或 儲存,該影像感測器係將一影像感測晶片裝設於一容晶穴 内,該容晶穴係可為一導線架或硬質印刷電路板形成=預 模體〔pre-mold〕,或為一陶瓷基板形成之凹槽,再以一 透明玻璃密封,而在密封影像感測晶片之空間内通常係為 真空或填充有惰性氣體,以防止水氣或塵粒侵入。 旦 美國專利公告第6,3 4 2,4 0 6號發明專利係揭示有一種 衫像感測器之COG封裝構造,其係將一影像感測晶片覆晶 接合至一透明玻璃’該透明玻璃係具有相互以導線連接並 ,成於不同表面的訊號輸入端與訊號輸出端,該影像感測 晶片係形成有複數個凸塊,以與透明玻璃之訊號輸入端電 性導接’之後’可將該透明玻璃之訊號輸出端接合至一具 開孔之印刷電路板,故電性傳遞路徑係為由該影像感測晶 片經過透明玻璃方傳遞至印刷電路板,該透明玻璃係必須, 要具備有透光與雙面電性傳導之功能,要在玻璃質之透明4. Description of creation (l) [Technical field to which the new type belongs] Especially related to the image sensor This creation relates to an image sensor package, a glass on a wafer [glass 〇ri chip, g〇C] Package. [Previous technology] With the development of technology, more and more personal hand-held electronic ports will use image sensors, such as digital cameras, number 2; and the number of individuals ... [and], etc. : Device =, to capture optical image signals by hand sensing, convert the optical image signals into electrical signals and transfer them to the circuit substrate, so that the optical image signals can be identified, processed or stored. The image sensor is an image sensor The chip is installed in a crystal cavity, which can be formed by a lead frame or a hard printed circuit board = pre-mold, or a groove formed by a ceramic substrate, and then a transparent glass Sealed, and the space in which the image sensing wafer is sealed is usually vacuum or filled with inert gas to prevent moisture or dust particles from entering. Once U.S. Patent Publication No. 6,3 4 2,4 0 6 discloses a COG packaging structure of a shirt image sensor, which is an image sensing chip flip chip bonded to a transparent glass' the transparent glass It has signal input terminals and signal output terminals connected to each other and formed on different surfaces. The image sensing chip is formed with a plurality of bumps to be electrically connected to the signal input terminal of transparent glass. The signal output end of the transparent glass is bonded to a printed circuit board with an opening, so the electrical transmission path is transmitted from the image sensing chip to the printed circuit board through the transparent glass side. The transparent glass must be provided with It has the functions of light transmission and double-sided electrical conduction. It must be transparent in glass

第8頁 M246802Page 8 M246802

形成雙面電性傳導之線路係為困難而高成本, 古法1 =像感測晶片必須先形成有凸塊,此外,依其封裝 m潘^ $影像感測晶片與透明玻璃電連接後,再提供一封 :層=著劑將連接處周緣密封住1而該影像感測晶片 ^ ^先層之尺寸係近似相同,在電連接後該透光層不具 有足夠承載面積時以供封膠層或黏著劑之塗施成形。、 【新型内容1 本創作之主要目的係在於提供一種玻璃在晶片上 〔glass on chip,G0C〕之影像感測器封裝,利用一具有 槽孔之透光玻璃設於該影像感測晶片之主動面上,該槽孔 係對應該影像感測晶片之銲墊,以使得複數個銲線經由該L 槽孔連接該影像感測晶片之銲墊及該透光玻璃之導電線 本創作之次一目的係在於提供一種玻璃在晶片上之影 像感測器封裝,利用一密封環設於該影像感測晶片與該透 光玻璃之間,並環繞該影像感測晶片之感測區,使得該影 像感測晶片之感測區與該透光玻璃之間形成有一密閉空 間’該密閉空間内不需存在其他透明膠,以避免降低該影 像感測晶片之感測區之解析度。 依本創作之玻璃在晶片上之影像感測器封裝,其係主 f 要包含一影像感測晶片 '一透光玻璃及一封膠體,其中該 影像感測晶片係具有一主動面,該主動面係包含有一感侧 區及一周邊區,該周邊區係形成有複數個銲墊,該透光玻 璃係設於該影像感測晶片之主動面上,該透光玻璃係具有Forming a double-sided electrical conduction line is difficult and costly. The ancient method 1 = the image sensor chip must be formed with bumps. In addition, the image sensor chip is electrically connected to transparent glass according to its packaging. Provide another one: layer = adhesive seals the periphery of the connection 1 and the image sensor chip ^ ^ The size of the first layer is approximately the same. When the light-transmitting layer does not have sufficient load bearing area for electrical sealing after electrical connection Application of layers or adhesives. [New content 1 The main purpose of this creation is to provide an image sensor package of glass on chip (G0C). The use of a transparent glass with a slot is provided on the image sensor chip. On the surface, the slot corresponds to the bonding pad of the image sensing chip, so that a plurality of bonding wires are connected to the bonding pad of the image sensing chip and the conductive wire of the transparent glass through the L slot. The purpose is to provide a glass-on-wafer image sensor package. A sealing ring is provided between the image sensing chip and the transparent glass, and surrounds the sensing area of the image sensing chip, so that the image A sealed space is formed between the sensing area of the sensing chip and the transparent glass. 'There is no need for other transparent glue in the sealed space to avoid reducing the resolution of the sensing area of the image sensing chip. The image sensor package of glass on a wafer created according to the present invention is mainly composed of an image sensing chip, a transparent glass and a colloid, wherein the image sensing chip has an active surface, and the active The surface system includes a sensing side area and a peripheral area. The peripheral area is formed with a plurality of bonding pads. The transparent glass is disposed on the active surface of the image sensing chip. The transparent glass has

第9頁 M246802 四、創作說明(3) -- 一""' -- 一 f 一表面、一第二表面及至少一槽孔,該第一表面係具 ,一透光區及一佈線區,該第二表面係朝向該影像感測晶 片之f動面,該透光區係對應該影像感測晶片之該感測 f L咸佈線區係形成有複數個導電線路,該些導電線路之 此^係以複數個銲線電性連接該影像感測晶片之銲墊,該 些導電線路之另一端係植接有複數個銲球,該槽孔係貫穿 忒透光玻璃之第一表面與第二表面,並對應該影像感測晶 片之銲墊’該封膠體係包覆該些銲線。 【實施方式】 參閱所附圖式,本創作將列舉以下之實施例說明。 依本創作之一具體實施例,請參閱第1圖,一種玻璃 在晶片上〔glass 〇n chip,GOC〕之影像感測器封裝 1〇〇,其係主要包含一影像感測晶片110、一透光玻璃12〇 及一封膠體1 3 0,其中該影像感測晶片11 〇係為一種光感測 晶片〔optical sensing chip〕、電荷柄合裝置〔Charge coupled device,CCD〕、互補式金屬氧化半導體 〔complementary metal oxide semiconductor , CMOS〕 或光電二極體〔photodiode〕,該影像感測晶片11 〇係具 有一主動面111,該主動面111係包含有一感測區丨丨2及一 周邊區113,該周邊區113係形成有複數個銲墊114,該透 光玻璃1 2 0係設於該影像感測晶片1 1 0之主動面111上,該 影像感測晶片11 0與該透光玻璃1 2 0之間係設有一呈口型.或 〇型之密封環140,該密封環140係環繞該影像感測晶片110 之感測區1 1 2,並設於該影像感測晶片11 〇之感測區1 1 2與Page 9 M246802 IV. Creative Instructions (3)-a " " '-a f a surface, a second surface and at least one slot, the first surface is provided with a light transmitting area and a wiring Area, the second surface is directed toward the f-moving surface of the image sensing chip, and the light-transmitting area corresponds to the sensing fL wiring area of the image sensing chip, and a plurality of conductive lines are formed. Here, a plurality of bonding wires are electrically connected to the pads of the image sensing chip, and the other ends of the conductive lines are implanted with a plurality of solder balls, and the slot holes pass through the first surface of the transparent glass And the second surface, and corresponding to the bonding pads of the image sensing chip, the sealing system covers the bonding wires. [Embodiment] With reference to the attached drawings, the present invention will enumerate the following embodiment descriptions. According to a specific embodiment of this creation, please refer to FIG. 1, an image sensor package 100 of glass on a chip [glass ON chip, GOC], which mainly includes an image sensing chip 110, a Light-transmitting glass 120 and a colloid 130, wherein the image-sensing chip 110 is an optical sensing chip, a charge coupled device (CCD), and a complementary metal oxide Semiconductor [complementary metal oxide semiconductor (CMOS)] or photodiode [photodiode], the image sensing chip 110 has an active surface 111, the active surface 111 includes a sensing area 丨 2 and a peripheral area 113, The peripheral region 113 is formed with a plurality of bonding pads 114, and the transparent glass 1 2 0 is disposed on the active surface 111 of the image sensing wafer 1 1 0. The image sensing wafer 1 10 and the transparent glass 1 A sealing ring 140 having a mouth shape or a 0 shape is arranged between 20, and the sealing ring 140 surrounds the sensing area 1 12 of the image sensing chip 110, and is arranged on the image sensing chip 110. Sensing area 1 1 2 and

第10頁 M246802 四、創作說明(4)Page 10 M246802 IV. Creative Instructions (4)

該些銲墊11 4之間,使得該影像感測晶片11 0之感測區丨i 2 與該透光玻璃1 2 0之間形成有一密閉空間,較佳地,該密 閉空間内係為真空或填充有惰性氣體’以防止水氣或塵粒 侵入,該密封環1 4 0係不覆蓋該影像感測晶片1 1 〇之感測區 112,該透光玻璃120係具有一第一表面121、一第二表面 122及至少一槽孔123,該第一表面121係具有一透光區124 及一佈線區1 25,該第二表面1 22係朝向該影像感測晶片 11 0之主動面111,該透光區1 24係對應該影像感測晶片π 〇 之感測區11 2,該佈線區1 25係形成有複數個導電線路 126,較佳地,該佈線區125係形成有一保護層127,以覆 蓋該些導電線路126,避免該些導電線路126氧化或被刮 傷,該些導電線路1 2 6之一端係以複數個銲線1 5 〇電性連接 該影像感測晶片11 0之録墊11 4,該些導電線路1 2 6之另一 端係植接有複數個銲球1 6 0,以傳遞該影像感測器封裝1 〇 Q 之電子訊號,該槽孔123係貫穿該透光玻璃120之第一表面 121與第二表面122 ’該槽孔123係環繞該透光區124,並對 應该影像感測晶片110之焊塾114,以使得該些鮮線150可 穿過該槽孔1 2 3而連接該影像感測晶片11 〇之銲墊1丨4與該 透光玻璃11 0之導電線路1 2 6,該槽孔1 2 3係可設於該透光 玻璃120之透光區124與佈線區125之間或設於該佈線區125 之中,當該槽孔1 2 3設計位於該佈線區丨2 5時,不可影響該 些導電線路1 2 6之佈線,該封膠體丨3 〇係以注膠或壓模方式 形成,並填充於該透光玻璃12〇之槽孔123,以包覆該些銲 線1 5 0與該影像感測晶片11 〇之銲墊u 4,在本實施例中,Between the solder pads 11 4, a sealed space is formed between the sensing area 丨 i 2 of the image sensing chip 110 and the transparent glass 12 0. Preferably, the sealed space is vacuum-sealed. Or filled with inert gas' to prevent moisture or dust particles from invading, the sealing ring 14 0 does not cover the sensing area 112 of the image sensing wafer 1 1 0, and the transparent glass 120 has a first surface 121 A second surface 122 and at least one slot 123, the first surface 121 has a light transmitting area 124 and a wiring area 125, and the second surface 1 22 is an active surface facing the image sensing chip 110 111. The light-transmitting area 1 24 is a sensing area 11 2 corresponding to the image sensing chip π 〇, and the wiring area 1 25 is formed with a plurality of conductive lines 126. Preferably, the wiring area 125 is formed with a protection Layer 127 to cover the conductive lines 126 to prevent the conductive lines 126 from being oxidized or scratched. One end of the conductive lines 1 2 6 is electrically connected to the image sensing chip 11 by a plurality of bonding wires 1 50. 0 of the recording pad 11 4, the other end of these conductive lines 1 2 6 are planted with a plurality of solder balls 1 6 0 to pass The image sensor is packaged with an electronic signal of 1Q. The slot 123 penetrates the first surface 121 and the second surface 122 of the transparent glass 120. The slot 123 surrounds the transparent area 124 and should The solder pads 114 of the image sensing chip 110, so that the fresh wires 150 can pass through the slot 1 2 3 and connect the conductive pads 1 丨 4 of the image sensing chip 11 0 with the conductivity of the transparent glass 110. Circuit 1 2 6, the slot 1 2 3 can be located between the transparent area 124 of the transparent glass 120 and the wiring area 125 or in the wiring area 125. When the slot 1 2 3 is located in When the wiring area 丨 25, the wiring of the conductive lines 126 cannot be affected. The sealant 丨 3 〇 is formed by injection molding or stamping, and is filled in the slot 123 of the transparent glass 120. The pad u 4 covering the bonding wires 1 50 and the image sensing chip 11 0 is used. In this embodiment,

第11頁 M246802 四、創作說明(5) 該封膠體1 3 0係填充於該影像感測晶片11 〇之周邊區11 3與 該透光玻璃11 0之間,以增益該影像感測晶片11 0與該透光 玻璃11 0之固定性。Page 11 M246802 IV. Creation instructions (5) The sealing gel 1 3 0 is filled between the peripheral area 11 3 of the image sensing wafer 11 0 and the transparent glass 110 to gain the image sensing wafer 11 The fixedness between 0 and the transparent glass 110.

由於該透光玻璃120之槽孔123係對應該影像感測晶片 110之銲墊114,可使得該些銲線150直接經由該槽孔123連 接該影像感測晶片11 〇之銲墊丨丨4及該透光玻璃1 2 0之導電 線路126,故該影像感測晶片丨1()之銲墊114上不必形成有 凸塊,在製程上較為節省,此外,該密封環1 4〇係環繞該 影像感測晶片11 〇之感測區i j 2,使得該影像感測晶片i J 〇 之感測區11 2與該透光玻璃1 20之間形成有一密閉空間,該 密閉空間内不需存在其他透明膠,且可避免該封膠體丨3〇 /亏染该影像感測晶片丨丨〇之感測區丨丨2,以避免降低該影像 感測晶片11 0之感測區i j 2之解析度。 、,本創作之保護範圍當視後附之申請專利範圍所界定者 為準,任何熟知此項技藝者,在不脫離本創作之精神和範 圍内所作之任何變化與修改,均屬於本創作之保護範圍。Since the slot 123 of the transparent glass 120 corresponds to the bonding pad 114 of the image sensing chip 110, the bonding wires 150 can be directly connected to the bonding pad of the image sensing chip 11 through the slot 123. And the conductive line 126 of the light-transmitting glass 120, the bumps 114 on the image sensing wafer 1 () need not be formed, which is more economical in manufacturing process. In addition, the sealing ring 14 is surrounded by A sensing space ij 2 of the image sensing wafer 11 〇, so that a sealed space is formed between the sensing area 11 2 of the image sensing wafer i J 〇 and the transparent glass 120. The sealed space does not need to exist Other transparent glue, which can avoid the sealing gel 丨 30 / defect the sensing area of the image sensing chip 丨 丨 〇 2 to avoid reducing the resolution of the sensing area ij 2 of the image sensing chip 1100 degree. The scope of protection of this creation shall be determined by the scope of the attached patent application. Any changes and modifications made by those skilled in the art without departing from the spirit and scope of this creation shall belong to this creation. protected range.

第12頁 M246802 圖式簡單說明 【圖式簡單說明】 第1圖··依本創作之一具體實施例,一種玻璃在晶片上之 影像感測器封裝之截面示意圖。 元件符號簡單說明: I 0 0 影像感測器封裝 II 0 影像感測晶片111主動面 11 2感測區 11 3周邊區 11 4銲墊 120 透光玻璃 121第一表面 122第二表面 123槽孔 124透光區 125佈線區 1 2 6 導電線路 1 2 7 保護層 1 3 0 封膠體 140密封環 150 銲線 1 6 0 銲球Page 12 M246802 Schematic description [Schematic description] Figure 1 · According to a specific embodiment of this creation, a schematic cross-sectional view of a glass-on-chip image sensor package. Brief description of component symbols: I 0 0 image sensor package II 0 image sensor chip 111 active surface 11 2 sensing area 11 3 peripheral area 11 4 solder pad 120 transparent glass 121 first surface 122 second surface 123 slot hole 124 Transparent area 125 Wiring area 1 2 6 Conductive line 1 2 7 Protective layer 1 3 0 Sealant 140 Seal ring 150 Welding wire 1 6 0 Solder ball

第13頁Page 13

Claims (1)

M246802 五、申請專利範圍 【申請專利範圍】 1、一種玻璃在晶片上〔glass on chip,GOC〕之影像感 測器封裝,包含: 一影像感測晶片,其係具有一主動面,該主動面係包 含有一感測區及一周邊區,該周邊區係形成有複數個銲 墊; 一透光玻璃,其係設於該影像感測晶片,該透光玻璃 係具有一第一表面、一第二表面及至少一槽孔,該第一 表面係具有一透光區,該透光區係對應該影像感測晶片 之該感測區,該第一表面係形成有複數個導電線路,該 泰 槽孔係貫穿該透光玻璃之該第一表面與該第二表面,並 對應該影像感測晶片之該些銲墊; 複數個銲線,其係連接該影像感測晶片之該些銲墊及 該透光玻璃之該些導電線路; 一封膠體,其係包覆該些銲線;及 複數個銲球,其係植接於該透光玻璃之該第一表面之 該些導電線路。 2、如申請專利範圍第1項所述之玻璃在晶片上之影像感. 測器封裝,其另包含一密封環,其係設於該影像感測晶 片與該透光玻璃之間,並環繞該影像感測晶片之該感測 馨 區,使得該影像感測晶片之該感測區與該透光玻璃之間 形成有一密閉空間。 3、如申請專利範圍第2項所述之玻璃在晶片上之影像感 測器封裝,其中該密封環係設於該影像感測晶片之該感 M246802M246802 5. Scope of patent application [Scope of patent application] 1. An image sensor package of glass on chip (GOC), including: An image sensing chip, which has an active surface, the active surface The system includes a sensing area and a peripheral area. The peripheral area is formed with a plurality of welding pads. A light-transmitting glass is disposed on the image sensing chip. The light-transmitting glass has a first surface and a second surface. Surface and at least one slot, the first surface has a light-transmitting area corresponding to the sensing area of the image sensing chip, the first surface is formed with a plurality of conductive lines, and the Thai groove The holes penetrate the first surface and the second surface of the transparent glass, and correspond to the pads of the image sensing wafer; a plurality of bonding wires are connected to the pads of the image sensing wafer and The conductive lines of the transparent glass; a colloid that covers the bonding wires; and a plurality of solder balls that are implanted on the conductive lines of the first surface of the transparent glass. 2. The image sensing of glass on a wafer as described in item 1 of the scope of patent application. The sensor package further includes a sealing ring, which is arranged between the image sensing wafer and the transparent glass and surrounds The sensing area of the image sensing chip makes a closed space formed between the sensing area of the image sensing chip and the transparent glass. 3. The image sensor package of glass on a wafer as described in item 2 of the scope of the patent application, wherein the sealing ring is provided on the image sensor chip. M246802 五、申請專利範圍 測區與該些銲墊之間。 4、 如申請專利範圍第2項所述之玻璃在晶片上之影像感 測器封裝,其中該密封環係不覆蓋該影像感測晶片之該 感測區。 5、 如申請專利範圍第2項所述之玻璃在晶片上之影像感 測器封裝,其中該密封環係呈口型。 6、 如申請專利範圍第1項所述之玻璃在晶片上之影像感 測器封裝,其中該第一表面係具有一佈線區,該些導電 線路係形成於該佈線區。V. Scope of patent application Between the test area and the pads. 4. The image sensor package of glass on a wafer as described in item 2 of the scope of the patent application, wherein the sealing ring does not cover the sensing area of the image sensing chip. 5. The image sensor package of glass on a wafer as described in item 2 of the scope of patent application, wherein the sealing ring is mouth-shaped. 6. The glass-on-wafer image sensor package according to item 1 of the scope of the patent application, wherein the first surface has a wiring area, and the conductive lines are formed in the wiring area. 7、 如申請專利範圍第6項所述之玻璃在晶片上之影像感 測器封裝,其中該槽孔係設於該透光區與該佈線區之 間。 、如申請專利範圍第6項所述之玻璃在晶片上之影像感 測器封裝,其中該槽孔係設於該佈線區之中。 9 申請專利範圍第6項所述之玻璃在晶片上之影像感 貝】器封裝’其中該佈線區係形成有一保護層,以覆蓋該 些導電線路。 I 〇、如申請專利範圍第1項所述之玻璃在晶片上之影像感 II /則器封裝’其中該槽孔係環繞該透光區。 ^申請專利範圍第1項所述之玻璃在晶片上之影像感> ’則器封裝’其中該封膠體係填充該透光玻璃之該 孑L 〇 測器^ ΐ專利範圍第1項所述之玻璃在晶片上之影像感 $裝,其中該封膠體係填充於該影像感測晶片之7. The glass-on-wafer image sensor package as described in item 6 of the scope of the patent application, wherein the slot is provided between the light-transmitting area and the wiring area. The image sensor package of glass on a wafer as described in item 6 of the scope of patent application, wherein the slot is provided in the wiring area. 9 The image sensor of glass on a wafer as described in item 6 of the scope of the patent application] device package 'wherein the wiring area is formed with a protective layer to cover the conductive lines. I 〇 The glass image on the wafer as described in item 1 of the scope of patent application II / The device package ’, wherein the slot surrounds the light transmitting area. ^ The image of the glass on the wafer described in the scope of the patent application No. 1 > 'the package of the device', wherein the sealant system is filled with the 孑 L 〇 tester of the transparent glass ^ Image sensing of glass on a wafer, wherein the sealant system is filled in the image sensing wafer 第15頁 M246802Page 15 M246802 第16頁Page 16
TW092221246U 2003-12-02 2003-12-02 Image sensor package with glass on chip configuration TWM246802U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW092221246U TWM246802U (en) 2003-12-02 2003-12-02 Image sensor package with glass on chip configuration

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW092221246U TWM246802U (en) 2003-12-02 2003-12-02 Image sensor package with glass on chip configuration

Publications (1)

Publication Number Publication Date
TWM246802U true TWM246802U (en) 2004-10-11

Family

ID=34434024

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092221246U TWM246802U (en) 2003-12-02 2003-12-02 Image sensor package with glass on chip configuration

Country Status (1)

Country Link
TW (1) TWM246802U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI691064B (en) * 2017-08-02 2020-04-11 美商豪威科技股份有限公司 Image sensor package to limit package height and reduce edge flare

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI691064B (en) * 2017-08-02 2020-04-11 美商豪威科技股份有限公司 Image sensor package to limit package height and reduce edge flare

Similar Documents

Publication Publication Date Title
TW201104747A (en) Image sensor package structure
US20060086899A1 (en) Structure of image sensor package
TWI284402B (en) Build-up package and method of an optoelectronic chip
TWM264651U (en) Package structure of image sensor device
TW200539413A (en) Image sensor package module with a leadless leadframe between chips
TW200522297A (en) Photosensitive semiconductor package and method for fabricating the same
TWI652808B (en) Multi-chip package ball grid array structure
US20060255253A1 (en) Method for packaging an image sensor die and a package thereof
JP3502061B2 (en) Image sensor stack package structure
TWI244177B (en) Method for assembling image sensor and structure of the same
TWM246802U (en) Image sensor package with glass on chip configuration
TWI232567B (en) Image sensor package with a FPC surrounding a window
TWI239106B (en) Image sensor package with sealing sensing region configuration
TWI236768B (en) Low noise multi chip image sensor package
TWI851395B (en) Image sensing module
TWI227942B (en) Image sensor with metal sealing
TWI241018B (en) Method for manufacturing wafer level image sensor package with chip on glass configuration and structure of the same
CN100454566C (en) Image sensing-detecting chip and circuit board combination
TWI239095B (en) Image sensor package with multi substrates and method for manufacturing of the same
TWI338364B (en) Image sensor chip package structure and method thereof
KR200329629Y1 (en) Semiconductor chip package for image sensor
KR100388290B1 (en) semiconductor package and its manufacturing method
TWI239602B (en) Chip on film type image sensor package and method for manufacturing of the same
TWI234870B (en) Quad flat non-lead image sensor package and method for manufacturing the same
JP2004048810A (en) Image sensor module and its manufacturing method

Legal Events

Date Code Title Description
MM4K Annulment or lapse of a utility model due to non-payment of fees