TWI905659B - 帶電粒子線裝置 - Google Patents

帶電粒子線裝置

Info

Publication number
TWI905659B
TWI905659B TW113105216A TW113105216A TWI905659B TW I905659 B TWI905659 B TW I905659B TW 113105216 A TW113105216 A TW 113105216A TW 113105216 A TW113105216 A TW 113105216A TW I905659 B TWI905659 B TW I905659B
Authority
TW
Taiwan
Prior art keywords
aforementioned
defect
observation image
sample
light
Prior art date
Application number
TW113105216A
Other languages
English (en)
Chinese (zh)
Other versions
TW202437310A (zh
Inventor
平野大輔
Original Assignee
日商日立全球先端科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日立全球先端科技股份有限公司 filed Critical 日商日立全球先端科技股份有限公司
Publication of TW202437310A publication Critical patent/TW202437310A/zh
Application granted granted Critical
Publication of TWI905659B publication Critical patent/TWI905659B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/22Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/22Optical, image processing or photographic arrangements associated with the tube
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/22Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222Image processing arrangements associated with the tube
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/244Detectors; Associated components or circuits therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
TW113105216A 2023-03-09 2024-02-15 帶電粒子線裝置 TWI905659B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2023/009147 WO2024185143A1 (ja) 2023-03-09 2023-03-09 荷電粒子線装置
WOPCT/JP2023/009147 2023-03-09

Publications (2)

Publication Number Publication Date
TW202437310A TW202437310A (zh) 2024-09-16
TWI905659B true TWI905659B (zh) 2025-11-21

Family

ID=92674586

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113105216A TWI905659B (zh) 2023-03-09 2024-02-15 帶電粒子線裝置

Country Status (4)

Country Link
JP (1) JPWO2024185143A1 (https=)
KR (1) KR20250129060A (https=)
TW (1) TWI905659B (https=)
WO (1) WO2024185143A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201132968A (en) * 2009-08-12 2011-10-01 Hermes Microvision Inc Charged particle beam inspection method
TW202036600A (zh) * 2019-03-27 2020-10-01 日商日立全球先端科技股份有限公司 荷電粒子線裝置
TW202336797A (zh) * 2021-10-05 2023-09-16 美商科磊股份有限公司 用於帶電粒子工具之帶通帶電粒子能量過濾偵測器

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11393657B2 (en) 2018-09-11 2022-07-19 Hitachi High-Tech Corporation Electron beam device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201132968A (en) * 2009-08-12 2011-10-01 Hermes Microvision Inc Charged particle beam inspection method
TW202036600A (zh) * 2019-03-27 2020-10-01 日商日立全球先端科技股份有限公司 荷電粒子線裝置
US20220139667A1 (en) * 2019-03-27 2022-05-05 Hitachi High-Tech Corporation Charged particle beam device
TW202336797A (zh) * 2021-10-05 2023-09-16 美商科磊股份有限公司 用於帶電粒子工具之帶通帶電粒子能量過濾偵測器

Also Published As

Publication number Publication date
WO2024185143A1 (ja) 2024-09-12
TW202437310A (zh) 2024-09-16
JPWO2024185143A1 (https=) 2024-09-12
KR20250129060A (ko) 2025-08-28

Similar Documents

Publication Publication Date Title
KR102911716B1 (ko) 형광 현미경 검사 시스템, 장치 및 방법
US8237119B2 (en) Scanning type charged particle beam microscope and an image processing method using the same
JP5292128B2 (ja) 走査プローブ顕微鏡およびこれを用いた試料の観察方法
US8181268B2 (en) Scanning probe microscope and method of observing sample using the same
JP5033609B2 (ja) 走査プローブ顕微鏡およびこれを用いた試料の観察方法
JP5725501B2 (ja) 検査装置
JP2007086735A (ja) サイドローブが除去された共焦点自己干渉顕微鏡
JP2004533604A (ja) 反射散乱型ジオメトリを用いた無開口近接場走査型ラマン顕微鏡法
JP2017516107A (ja) 光学式検査及び光学式レビューからの欠陥属性に基づく電子ビームレビューのための欠陥サンプリング
CN105190690A (zh) 显微图像的图像质量评估
KR20200131161A (ko) 패턴 평가 시스템 및 패턴 평가 방법
Yang et al. Surface defects evaluation system based on electromagnetic model simulation and inverse-recognition calibration method
US20240353352A1 (en) Methods And Systems For Nanoscale Imaging Based On Second Harmonic Signal Generation And Through-Focus Scanning Optical Microscopy
JP5114808B2 (ja) 検査装置及び欠陥検査方法
TWI905659B (zh) 帶電粒子線裝置
Apollon et al. A beginner’s guide to different types of microscopes
JP6206871B2 (ja) 光学顕微鏡システム
Umakoshi Near-field optical microscopy toward its applications for biological studies
CN116952952B (zh) 固体材料中电子点缺陷的探测方法、探测装置和系统
CN116609303B (zh) 纳米材料的超分辨缺陷探测系统、缺陷识别方法及装置
CN117629929B (zh) 一种单分子力谱-红外光谱联用方法、系统及设备
KR102791751B1 (ko) 단일 입사광 기반 광루미네선스를 이용한 실리콘카바이드 기판의 기저면 전위 결함을 포함한 결함분류 장비 및 그를 이용한 결함분류 방법
JP2006133019A (ja) 透過電子顕微鏡又は走査型透過電子顕微鏡を用いた試料の分析方法及び分析装置
Hou et al. Simulation and detection of surface defects of optical components
CN108051362B (zh) 一种针对单个纳米颗粒的检测方法