TWI905422B - 具有增強的缺陷抑制的拋光組成物和拋光襯底之方法 - Google Patents

具有增強的缺陷抑制的拋光組成物和拋光襯底之方法

Info

Publication number
TWI905422B
TWI905422B TW111115597A TW111115597A TWI905422B TW I905422 B TWI905422 B TW I905422B TW 111115597 A TW111115597 A TW 111115597A TW 111115597 A TW111115597 A TW 111115597A TW I905422 B TWI905422 B TW I905422B
Authority
TW
Taiwan
Prior art keywords
mechanical polishing
chemical mechanical
polishing composition
group
substrate
Prior art date
Application number
TW111115597A
Other languages
English (en)
Chinese (zh)
Other versions
TW202245044A (zh
Inventor
郭毅
Original Assignee
美商杜邦電子材料控股股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商杜邦電子材料控股股份有限公司 filed Critical 美商杜邦電子材料控股股份有限公司
Publication of TW202245044A publication Critical patent/TW202245044A/zh
Application granted granted Critical
Publication of TWI905422B publication Critical patent/TWI905422B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/54—Quaternary phosphonium compounds
    • C07F9/5456—Arylalkanephosphonium compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW111115597A 2021-04-27 2022-04-25 具有增強的缺陷抑制的拋光組成物和拋光襯底之方法 TWI905422B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/241,377 US11274230B1 (en) 2021-04-27 2021-04-27 Polishing composition and method of polishing a substrate having enhanced defect inhibition
US17/241,377 2021-04-27

Publications (2)

Publication Number Publication Date
TW202245044A TW202245044A (zh) 2022-11-16
TWI905422B true TWI905422B (zh) 2025-11-21

Family

ID=80683392

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111115597A TWI905422B (zh) 2021-04-27 2022-04-25 具有增強的缺陷抑制的拋光組成物和拋光襯底之方法

Country Status (5)

Country Link
US (1) US11274230B1 (https=)
JP (1) JP2022169477A (https=)
KR (1) KR20220147525A (https=)
CN (1) CN115247027B (https=)
TW (1) TWI905422B (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160086819A1 (en) * 2013-04-25 2016-03-24 Hitachi Chemical Company, Ltd. Cmp polishing solution and polishing method using same
TW201825642A (zh) * 2016-09-28 2018-07-16 羅門哈斯電子材料Ｃｍｐ控股公司 使用含四級鏻化合物之方法和組成物之鎢之化學機械研磨

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5393469A (en) * 1992-03-20 1995-02-28 Lumigen, Inc. Polymeric phosphonium salts providing enhanced chemiluminescence from 1,2-dioxetanes
JP2000144109A (ja) * 1998-11-10 2000-05-26 Okamoto Machine Tool Works Ltd 化学機械研磨用研磨剤スラリ−
US9129907B2 (en) * 2006-09-08 2015-09-08 Cabot Microelectronics Corporation Onium-containing CMP compositions and methods of use thereof
US8017524B2 (en) * 2008-05-23 2011-09-13 Cabot Microelectronics Corporation Stable, high rate silicon slurry
MY150487A (en) 2008-09-19 2014-01-30 Cabot Microelectronics Corp Barrier slurry for low-k dielectrics.
JP2015189829A (ja) * 2014-03-27 2015-11-02 株式会社フジミインコーポレーテッド 研磨用組成物
KR102458648B1 (ko) * 2014-07-09 2022-10-26 쇼와덴코머티리얼즈가부시끼가이샤 Cmp용 연마액 및 연마 방법
US9631122B1 (en) * 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
KR102478439B1 (ko) * 2018-01-18 2022-12-15 쇼와덴코머티리얼즈가부시끼가이샤 연마액, 연마액 세트 및 연마 방법
US10683439B2 (en) * 2018-03-15 2020-06-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition
US10604678B1 (en) 2019-02-08 2020-03-31 Rohrn and Haas Electronic Materials CMP Holdings, Inc. Chemical mechanical polishing of tungsten using a method and composition containing quaternary phosphonium compounds
TWI794474B (zh) * 2019-04-15 2023-03-01 日商昭和電工材料股份有限公司 研磨液、研磨液套組及研磨方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160086819A1 (en) * 2013-04-25 2016-03-24 Hitachi Chemical Company, Ltd. Cmp polishing solution and polishing method using same
TW201825642A (zh) * 2016-09-28 2018-07-16 羅門哈斯電子材料Ｃｍｐ控股公司 使用含四級鏻化合物之方法和組成物之鎢之化學機械研磨

Also Published As

Publication number Publication date
KR20220147525A (ko) 2022-11-03
US11274230B1 (en) 2022-03-15
JP2022169477A (ja) 2022-11-09
CN115247027B (zh) 2024-03-01
TW202245044A (zh) 2022-11-16
CN115247027A (zh) 2022-10-28

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