CN115247027B - 具有增强的缺陷抑制的抛光组合物和抛光衬底的方法 - Google Patents
具有增强的缺陷抑制的抛光组合物和抛光衬底的方法 Download PDFInfo
- Publication number
- CN115247027B CN115247027B CN202210436232.6A CN202210436232A CN115247027B CN 115247027 B CN115247027 B CN 115247027B CN 202210436232 A CN202210436232 A CN 202210436232A CN 115247027 B CN115247027 B CN 115247027B
- Authority
- CN
- China
- Prior art keywords
- mechanical polishing
- chemical mechanical
- group
- polishing composition
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/28—Phosphorus compounds with one or more P—C bonds
- C07F9/54—Quaternary phosphonium compounds
- C07F9/5456—Arylalkanephosphonium compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Weting (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/241377 | 2021-04-27 | ||
| US17/241,377 US11274230B1 (en) | 2021-04-27 | 2021-04-27 | Polishing composition and method of polishing a substrate having enhanced defect inhibition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115247027A CN115247027A (zh) | 2022-10-28 |
| CN115247027B true CN115247027B (zh) | 2024-03-01 |
Family
ID=80683392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210436232.6A Active CN115247027B (zh) | 2021-04-27 | 2022-04-24 | 具有增强的缺陷抑制的抛光组合物和抛光衬底的方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11274230B1 (https=) |
| JP (1) | JP2022169477A (https=) |
| KR (1) | KR20220147525A (https=) |
| CN (1) | CN115247027B (https=) |
| TW (1) | TWI905422B (https=) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5393469A (en) * | 1992-03-20 | 1995-02-28 | Lumigen, Inc. | Polymeric phosphonium salts providing enhanced chemiluminescence from 1,2-dioxetanes |
| JP2000144109A (ja) * | 1998-11-10 | 2000-05-26 | Okamoto Machine Tool Works Ltd | 化学機械研磨用研磨剤スラリ− |
| CN101511966A (zh) * | 2006-09-08 | 2009-08-19 | 卡伯特微电子公司 | 含有鎓的化学机械抛光组合物及使用该组合物的方法 |
| CN102159662A (zh) * | 2008-09-19 | 2011-08-17 | 卡伯特微电子公司 | 用于低k电介质的阻挡物浆料 |
| US9631122B1 (en) * | 2015-10-28 | 2017-04-25 | Cabot Microelectronics Corporation | Tungsten-processing slurry with cationic surfactant |
| CN110283532A (zh) * | 2018-03-15 | 2019-09-27 | 罗门哈斯电子材料Cmp控股股份有限公司 | 具有增强缺陷抑制的抛光组合物和抛光衬底方法 |
| US10604678B1 (en) * | 2019-02-08 | 2020-03-31 | Rohrn and Haas Electronic Materials CMP Holdings, Inc. | Chemical mechanical polishing of tungsten using a method and composition containing quaternary phosphonium compounds |
| TW202104518A (zh) * | 2019-04-15 | 2021-02-01 | 日商日立化成股份有限公司 | 研磨液、研磨液套組及研磨方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8017524B2 (en) * | 2008-05-23 | 2011-09-13 | Cabot Microelectronics Corporation | Stable, high rate silicon slurry |
| JPWO2014175397A1 (ja) * | 2013-04-25 | 2017-02-23 | 日立化成株式会社 | Cmp用研磨液及びこれを用いた研磨方法 |
| JP2015189829A (ja) * | 2014-03-27 | 2015-11-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| KR102458648B1 (ko) * | 2014-07-09 | 2022-10-26 | 쇼와덴코머티리얼즈가부시끼가이샤 | Cmp용 연마액 및 연마 방법 |
| WO2018058347A1 (en) * | 2016-09-28 | 2018-04-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing of tungsten using method and composition containing quaternary phosphonium compounds |
| KR102478439B1 (ko) * | 2018-01-18 | 2022-12-15 | 쇼와덴코머티리얼즈가부시끼가이샤 | 연마액, 연마액 세트 및 연마 방법 |
-
2021
- 2021-04-27 US US17/241,377 patent/US11274230B1/en active Active
-
2022
- 2022-04-24 CN CN202210436232.6A patent/CN115247027B/zh active Active
- 2022-04-25 KR KR1020220050984A patent/KR20220147525A/ko active Pending
- 2022-04-25 TW TW111115597A patent/TWI905422B/zh active
- 2022-04-26 JP JP2022072274A patent/JP2022169477A/ja active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5393469A (en) * | 1992-03-20 | 1995-02-28 | Lumigen, Inc. | Polymeric phosphonium salts providing enhanced chemiluminescence from 1,2-dioxetanes |
| JP2000144109A (ja) * | 1998-11-10 | 2000-05-26 | Okamoto Machine Tool Works Ltd | 化学機械研磨用研磨剤スラリ− |
| CN101511966A (zh) * | 2006-09-08 | 2009-08-19 | 卡伯特微电子公司 | 含有鎓的化学机械抛光组合物及使用该组合物的方法 |
| CN102159662A (zh) * | 2008-09-19 | 2011-08-17 | 卡伯特微电子公司 | 用于低k电介质的阻挡物浆料 |
| US9631122B1 (en) * | 2015-10-28 | 2017-04-25 | Cabot Microelectronics Corporation | Tungsten-processing slurry with cationic surfactant |
| CN110283532A (zh) * | 2018-03-15 | 2019-09-27 | 罗门哈斯电子材料Cmp控股股份有限公司 | 具有增强缺陷抑制的抛光组合物和抛光衬底方法 |
| US10604678B1 (en) * | 2019-02-08 | 2020-03-31 | Rohrn and Haas Electronic Materials CMP Holdings, Inc. | Chemical mechanical polishing of tungsten using a method and composition containing quaternary phosphonium compounds |
| TW202104518A (zh) * | 2019-04-15 | 2021-02-01 | 日商日立化成股份有限公司 | 研磨液、研磨液套組及研磨方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20220147525A (ko) | 2022-11-03 |
| US11274230B1 (en) | 2022-03-15 |
| JP2022169477A (ja) | 2022-11-09 |
| TW202245044A (zh) | 2022-11-16 |
| CN115247027A (zh) | 2022-10-28 |
| TWI905422B (zh) | 2025-11-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI508154B (zh) | 包含多晶矽及氧化矽與氮化矽之至少一者之基板的研磨方法 | |
| TWI500749B (zh) | 使用適用於增加氧化矽移除之研磨組成物化學機械研磨基板之方法 | |
| CN111944428B (zh) | 化学机械抛光组合物以及优先于二氧化硅抛光氮化硅并同时抑制对二氧化硅的损伤的方法 | |
| TWI294456B (https=) | ||
| JPWO2004061925A1 (ja) | 化学的機械研磨用スラリー組成物、これを利用した半導体素子の表面平坦化方法及びスラリー組成物の選択比制御方法 | |
| TW202104524A (zh) | 具有增強的缺陷抑制並且在酸性環境中優先於二氧化矽選擇性地拋光氮化矽之化學機械拋光組成物及方法 | |
| JP2015063687A (ja) | 低欠陥化学機械研磨組成物 | |
| JP7548689B2 (ja) | タングステン用の化学機械研磨組成物及び方法 | |
| CN115247028B (zh) | 具有增强的缺陷减少的抛光组合物和抛光衬底的方法 | |
| CN110283532B (zh) | 具有增强缺陷抑制的抛光组合物和抛光衬底方法 | |
| KR20230044961A (ko) | 폴리규소의 제거 속도를 향상시키는 방법 | |
| KR101070410B1 (ko) | 연마용 조성물 및 이를 이용하는 연마방법 | |
| CN115247027B (zh) | 具有增强的缺陷抑制的抛光组合物和抛光衬底的方法 | |
| JP2025013285A (ja) | 化学機械研磨組成物及び研磨パッド溝閉塞の防止方法 | |
| JP7812630B2 (ja) | 研磨用組成物、研磨方法および基板の製造方法 | |
| WO2021161462A1 (ja) | Cmp研磨液及び研磨方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: Delaware, USA Patentee after: DuPont Electronic Materials Holdings Co.,Ltd. Country or region after: U.S.A. Address before: Delaware, USA Patentee before: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, Inc. Country or region before: U.S.A. |
|
| CP03 | Change of name, title or address |