CN115247027B - 具有增强的缺陷抑制的抛光组合物和抛光衬底的方法 - Google Patents

具有增强的缺陷抑制的抛光组合物和抛光衬底的方法 Download PDF

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Publication number
CN115247027B
CN115247027B CN202210436232.6A CN202210436232A CN115247027B CN 115247027 B CN115247027 B CN 115247027B CN 202210436232 A CN202210436232 A CN 202210436232A CN 115247027 B CN115247027 B CN 115247027B
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Prior art keywords
mechanical polishing
chemical mechanical
group
polishing composition
substrate
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CN202210436232.6A
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Chinese (zh)
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CN115247027A (zh
Inventor
郭毅
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DuPont Electronic Materials Holding Inc
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Rohm and Haas Electronic Materials CMP Holdings Inc
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02Phosphorus compounds
    • C07F9/28Phosphorus compounds with one or more P—C bonds
    • C07F9/54Quaternary phosphonium compounds
    • C07F9/5456Arylalkanephosphonium compounds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/402Chemomechanical polishing [CMP] of semiconductor materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN202210436232.6A 2021-04-27 2022-04-24 具有增强的缺陷抑制的抛光组合物和抛光衬底的方法 Active CN115247027B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/241377 2021-04-27
US17/241,377 US11274230B1 (en) 2021-04-27 2021-04-27 Polishing composition and method of polishing a substrate having enhanced defect inhibition

Publications (2)

Publication Number Publication Date
CN115247027A CN115247027A (zh) 2022-10-28
CN115247027B true CN115247027B (zh) 2024-03-01

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CN202210436232.6A Active CN115247027B (zh) 2021-04-27 2022-04-24 具有增强的缺陷抑制的抛光组合物和抛光衬底的方法

Country Status (5)

Country Link
US (1) US11274230B1 (https=)
JP (1) JP2022169477A (https=)
KR (1) KR20220147525A (https=)
CN (1) CN115247027B (https=)
TW (1) TWI905422B (https=)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5393469A (en) * 1992-03-20 1995-02-28 Lumigen, Inc. Polymeric phosphonium salts providing enhanced chemiluminescence from 1,2-dioxetanes
JP2000144109A (ja) * 1998-11-10 2000-05-26 Okamoto Machine Tool Works Ltd 化学機械研磨用研磨剤スラリ−
CN101511966A (zh) * 2006-09-08 2009-08-19 卡伯特微电子公司 含有鎓的化学机械抛光组合物及使用该组合物的方法
CN102159662A (zh) * 2008-09-19 2011-08-17 卡伯特微电子公司 用于低k电介质的阻挡物浆料
US9631122B1 (en) * 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
CN110283532A (zh) * 2018-03-15 2019-09-27 罗门哈斯电子材料Cmp控股股份有限公司 具有增强缺陷抑制的抛光组合物和抛光衬底方法
US10604678B1 (en) * 2019-02-08 2020-03-31 Rohrn and Haas Electronic Materials CMP Holdings, Inc. Chemical mechanical polishing of tungsten using a method and composition containing quaternary phosphonium compounds
TW202104518A (zh) * 2019-04-15 2021-02-01 日商日立化成股份有限公司 研磨液、研磨液套組及研磨方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8017524B2 (en) * 2008-05-23 2011-09-13 Cabot Microelectronics Corporation Stable, high rate silicon slurry
JPWO2014175397A1 (ja) * 2013-04-25 2017-02-23 日立化成株式会社 Cmp用研磨液及びこれを用いた研磨方法
JP2015189829A (ja) * 2014-03-27 2015-11-02 株式会社フジミインコーポレーテッド 研磨用組成物
KR102458648B1 (ko) * 2014-07-09 2022-10-26 쇼와덴코머티리얼즈가부시끼가이샤 Cmp용 연마액 및 연마 방법
WO2018058347A1 (en) * 2016-09-28 2018-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing of tungsten using method and composition containing quaternary phosphonium compounds
KR102478439B1 (ko) * 2018-01-18 2022-12-15 쇼와덴코머티리얼즈가부시끼가이샤 연마액, 연마액 세트 및 연마 방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5393469A (en) * 1992-03-20 1995-02-28 Lumigen, Inc. Polymeric phosphonium salts providing enhanced chemiluminescence from 1,2-dioxetanes
JP2000144109A (ja) * 1998-11-10 2000-05-26 Okamoto Machine Tool Works Ltd 化学機械研磨用研磨剤スラリ−
CN101511966A (zh) * 2006-09-08 2009-08-19 卡伯特微电子公司 含有鎓的化学机械抛光组合物及使用该组合物的方法
CN102159662A (zh) * 2008-09-19 2011-08-17 卡伯特微电子公司 用于低k电介质的阻挡物浆料
US9631122B1 (en) * 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
CN110283532A (zh) * 2018-03-15 2019-09-27 罗门哈斯电子材料Cmp控股股份有限公司 具有增强缺陷抑制的抛光组合物和抛光衬底方法
US10604678B1 (en) * 2019-02-08 2020-03-31 Rohrn and Haas Electronic Materials CMP Holdings, Inc. Chemical mechanical polishing of tungsten using a method and composition containing quaternary phosphonium compounds
TW202104518A (zh) * 2019-04-15 2021-02-01 日商日立化成股份有限公司 研磨液、研磨液套組及研磨方法

Also Published As

Publication number Publication date
KR20220147525A (ko) 2022-11-03
US11274230B1 (en) 2022-03-15
JP2022169477A (ja) 2022-11-09
TW202245044A (zh) 2022-11-16
CN115247027A (zh) 2022-10-28
TWI905422B (zh) 2025-11-21

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