TWI904130B - 基板處理系統、其氣體分配板及氣體分配組件 - Google Patents

基板處理系統、其氣體分配板及氣體分配組件

Info

Publication number
TWI904130B
TWI904130B TW110102992A TW110102992A TWI904130B TW I904130 B TWI904130 B TW I904130B TW 110102992 A TW110102992 A TW 110102992A TW 110102992 A TW110102992 A TW 110102992A TW I904130 B TWI904130 B TW I904130B
Authority
TW
Taiwan
Prior art keywords
gas distribution
arcuate portion
distribution plate
processing system
substrate processing
Prior art date
Application number
TW110102992A
Other languages
English (en)
Chinese (zh)
Other versions
TW202147377A (zh
Inventor
文胤 彭
穆罕默德 索海爾 謝赫
克雷格 羅斯理
丹 馬霍爾
Original Assignee
美商蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW202147377A publication Critical patent/TW202147377A/zh
Application granted granted Critical
Publication of TWI904130B publication Critical patent/TWI904130B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
TW110102992A 2020-01-28 2021-01-27 基板處理系統、其氣體分配板及氣體分配組件 TWI904130B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202062966816P 2020-01-28 2020-01-28
US62/966,816 2020-01-28

Publications (2)

Publication Number Publication Date
TW202147377A TW202147377A (zh) 2021-12-16
TWI904130B true TWI904130B (zh) 2025-11-11

Family

ID=77078307

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110102992A TWI904130B (zh) 2020-01-28 2021-01-27 基板處理系統、其氣體分配板及氣體分配組件

Country Status (6)

Country Link
US (1) US20220375725A1 (https=)
JP (2) JP7579866B2 (https=)
KR (2) KR102925637B1 (https=)
CN (1) CN115004332A (https=)
TW (1) TWI904130B (https=)
WO (1) WO2021154673A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI899187B (zh) * 2020-03-19 2025-10-01 美商蘭姆研究公司 基板處理系統
CN116334585A (zh) * 2021-12-23 2023-06-27 中微半导体设备(上海)股份有限公司 一种半导体设备喷淋头及等离子体装置
CN115547804B (zh) * 2022-09-29 2026-01-09 西实显示高新材料(沈阳)有限公司 大尺寸icp供气模组与icp设备

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TW412779B (en) * 1996-11-13 2000-11-21 Applied Materials Inc Lid assembly for high temperature processing chamber
US20070128864A1 (en) * 2005-11-04 2007-06-07 Paul Ma Apparatus and process for plasma-enhanced atomic layer deposition
WO2008048543A1 (en) * 2006-10-16 2008-04-24 Lam Research Corporation Upper electrode backing member with particle reducing features
TW201528310A (zh) * 2013-09-20 2015-07-16 蘭姆研究公司 用於具有雙電漿源反應器之晶圓處理的離子對中性物種控制
US20150318147A1 (en) * 2011-05-31 2015-11-05 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
CN109075024A (zh) * 2016-04-15 2018-12-21 应用材料公司 微体积沉积腔室

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US4590042A (en) * 1984-12-24 1986-05-20 Tegal Corporation Plasma reactor having slotted manifold
JP3038524B2 (ja) * 1993-04-19 2000-05-08 コマツ電子金属株式会社 半導体製造装置
US5746875A (en) * 1994-09-16 1998-05-05 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
US5800621A (en) * 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
US6245192B1 (en) * 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6237528B1 (en) * 2000-01-24 2001-05-29 M.E.C. Technology, Inc. Showerhead electrode assembly for plasma processing
US20040060514A1 (en) * 2002-01-25 2004-04-01 Applied Materials, Inc. A Delaware Corporation Gas distribution showerhead
US20070084406A1 (en) * 2005-10-13 2007-04-19 Joseph Yudovsky Reaction chamber with opposing pockets for gas injection and exhaust
US20070084408A1 (en) * 2005-10-13 2007-04-19 Applied Materials, Inc. Batch processing chamber with diffuser plate and injector assembly
US8440049B2 (en) * 2006-05-03 2013-05-14 Applied Materials, Inc. Apparatus for etching high aspect ratio features
US20090159002A1 (en) * 2007-12-19 2009-06-25 Kallol Bera Gas distribution plate with annular plenum having a sloped ceiling for uniform distribution
JP3160877U (ja) * 2009-10-13 2010-07-15 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ シャワーヘッド電極アセンブリの端部クランプ留めおよび機械固定される内側電極
WO2011146571A2 (en) * 2010-05-21 2011-11-24 Applied Materials, Inc. Tightly-fitted ceramic insulator on large-area electrode
JP2012216744A (ja) * 2010-11-10 2012-11-08 Sharp Corp 気相成長装置及び気相成長方法
US9353439B2 (en) * 2013-04-05 2016-05-31 Lam Research Corporation Cascade design showerhead for transient uniformity
US9390910B2 (en) * 2014-10-03 2016-07-12 Applied Materials, Inc. Gas flow profile modulated control of overlay in plasma CVD films
KR20160066340A (ko) * 2014-12-02 2016-06-10 삼성전자주식회사 기판 처리 장치
US10217614B2 (en) * 2015-01-12 2019-02-26 Lam Research Corporation Ceramic gas distribution plate with embedded electrode
US10622189B2 (en) * 2016-05-11 2020-04-14 Lam Research Corporation Adjustable side gas plenum for edge rate control in a downstream reactor
JP6851188B2 (ja) * 2016-11-28 2021-03-31 東京エレクトロン株式会社 プラズマ処理装置及びシャワーヘッド
JP2019145397A (ja) * 2018-02-22 2019-08-29 東芝メモリ株式会社 半導体製造装置および半導体装置の製造方法
US10840066B2 (en) * 2018-06-13 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Adjustable fastening device for plasma gas injectors
JP7096080B2 (ja) * 2018-06-18 2022-07-05 株式会社日立ハイテク プラズマ処理装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW412779B (en) * 1996-11-13 2000-11-21 Applied Materials Inc Lid assembly for high temperature processing chamber
US20070128864A1 (en) * 2005-11-04 2007-06-07 Paul Ma Apparatus and process for plasma-enhanced atomic layer deposition
WO2008048543A1 (en) * 2006-10-16 2008-04-24 Lam Research Corporation Upper electrode backing member with particle reducing features
US20150318147A1 (en) * 2011-05-31 2015-11-05 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
TW201528310A (zh) * 2013-09-20 2015-07-16 蘭姆研究公司 用於具有雙電漿源反應器之晶圓處理的離子對中性物種控制
CN109075024A (zh) * 2016-04-15 2018-12-21 应用材料公司 微体积沉积腔室

Also Published As

Publication number Publication date
JP7579866B2 (ja) 2024-11-08
KR20220131285A (ko) 2022-09-27
TW202147377A (zh) 2021-12-16
JP2025013990A (ja) 2025-01-28
CN115004332A (zh) 2022-09-02
JP2023512201A (ja) 2023-03-24
US20220375725A1 (en) 2022-11-24
KR20260028876A (ko) 2026-03-04
KR102925637B1 (ko) 2026-02-09
WO2021154673A1 (en) 2021-08-05

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