KR102925637B1 - 고전력, 고압 프로세스들을 위한 세그먼트화된 (segment) 가스 분배 플레이트 - Google Patents

고전력, 고압 프로세스들을 위한 세그먼트화된 (segment) 가스 분배 플레이트

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Publication number
KR102925637B1
KR102925637B1 KR1020227028460A KR20227028460A KR102925637B1 KR 102925637 B1 KR102925637 B1 KR 102925637B1 KR 1020227028460 A KR1020227028460 A KR 1020227028460A KR 20227028460 A KR20227028460 A KR 20227028460A KR 102925637 B1 KR102925637 B1 KR 102925637B1
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KR
South Korea
Prior art keywords
gas distribution
distribution plate
paragraph
gas
ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
KR1020227028460A
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English (en)
Korean (ko)
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KR20220131285A (ko
Inventor
고든 펑
모함메드 소하일 샤이크
크레이그 로스리
댄 마롤
Original Assignee
램 리써치 코포레이션
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Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Priority to KR1020267003843A priority Critical patent/KR20260028876A/ko
Publication of KR20220131285A publication Critical patent/KR20220131285A/ko
Application granted granted Critical
Publication of KR102925637B1 publication Critical patent/KR102925637B1/ko
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
KR1020227028460A 2020-01-28 2021-01-26 고전력, 고압 프로세스들을 위한 세그먼트화된 (segment) 가스 분배 플레이트 Active KR102925637B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020267003843A KR20260028876A (ko) 2020-01-28 2021-01-26 고전력, 고압 프로세스들을 위한 세그먼트화된 가스 분배 플레이트

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062966816P 2020-01-28 2020-01-28
US62/966,816 2020-01-28
PCT/US2021/014988 WO2021154673A1 (en) 2020-01-28 2021-01-26 Segmented gas distribution plate for high-power, high-pressure processes

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020267003843A Division KR20260028876A (ko) 2020-01-28 2021-01-26 고전력, 고압 프로세스들을 위한 세그먼트화된 가스 분배 플레이트

Publications (2)

Publication Number Publication Date
KR20220131285A KR20220131285A (ko) 2022-09-27
KR102925637B1 true KR102925637B1 (ko) 2026-02-09

Family

ID=77078307

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020227028460A Active KR102925637B1 (ko) 2020-01-28 2021-01-26 고전력, 고압 프로세스들을 위한 세그먼트화된 (segment) 가스 분배 플레이트
KR1020267003843A Pending KR20260028876A (ko) 2020-01-28 2021-01-26 고전력, 고압 프로세스들을 위한 세그먼트화된 가스 분배 플레이트

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020267003843A Pending KR20260028876A (ko) 2020-01-28 2021-01-26 고전력, 고압 프로세스들을 위한 세그먼트화된 가스 분배 플레이트

Country Status (6)

Country Link
US (1) US20220375725A1 (https=)
JP (2) JP7579866B2 (https=)
KR (2) KR102925637B1 (https=)
CN (1) CN115004332A (https=)
TW (1) TWI904130B (https=)
WO (1) WO2021154673A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI899187B (zh) * 2020-03-19 2025-10-01 美商蘭姆研究公司 基板處理系統
CN116334585A (zh) * 2021-12-23 2023-06-27 中微半导体设备(上海)股份有限公司 一种半导体设备喷淋头及等离子体装置
CN115547804B (zh) * 2022-09-29 2026-01-09 西实显示高新材料(沈阳)有限公司 大尺寸icp供气模组与icp设备

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US4590042A (en) * 1984-12-24 1986-05-20 Tegal Corporation Plasma reactor having slotted manifold
JP3038524B2 (ja) * 1993-04-19 2000-05-08 コマツ電子金属株式会社 半導体製造装置
US5746875A (en) * 1994-09-16 1998-05-05 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
US6019848A (en) * 1996-11-13 2000-02-01 Applied Materials, Inc. Lid assembly for high temperature processing chamber
US5800621A (en) * 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
US6245192B1 (en) * 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6237528B1 (en) * 2000-01-24 2001-05-29 M.E.C. Technology, Inc. Showerhead electrode assembly for plasma processing
US20040060514A1 (en) * 2002-01-25 2004-04-01 Applied Materials, Inc. A Delaware Corporation Gas distribution showerhead
US20070084406A1 (en) * 2005-10-13 2007-04-19 Joseph Yudovsky Reaction chamber with opposing pockets for gas injection and exhaust
US20070084408A1 (en) * 2005-10-13 2007-04-19 Applied Materials, Inc. Batch processing chamber with diffuser plate and injector assembly
KR101019293B1 (ko) * 2005-11-04 2011-03-07 어플라이드 머티어리얼스, 인코포레이티드 플라즈마-강화 원자층 증착 장치 및 방법
US8440049B2 (en) * 2006-05-03 2013-05-14 Applied Materials, Inc. Apparatus for etching high aspect ratio features
US7854820B2 (en) * 2006-10-16 2010-12-21 Lam Research Corporation Upper electrode backing member with particle reducing features
US20090159002A1 (en) * 2007-12-19 2009-06-25 Kallol Bera Gas distribution plate with annular plenum having a sloped ceiling for uniform distribution
JP3160877U (ja) * 2009-10-13 2010-07-15 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ シャワーヘッド電極アセンブリの端部クランプ留めおよび機械固定される内側電極
WO2011146571A2 (en) * 2010-05-21 2011-11-24 Applied Materials, Inc. Tightly-fitted ceramic insulator on large-area electrode
US9793126B2 (en) * 2010-08-04 2017-10-17 Lam Research Corporation Ion to neutral control for wafer processing with dual plasma source reactor
JP2012216744A (ja) * 2010-11-10 2012-11-08 Sharp Corp 気相成長装置及び気相成長方法
US8562785B2 (en) * 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
US9353439B2 (en) * 2013-04-05 2016-05-31 Lam Research Corporation Cascade design showerhead for transient uniformity
US9390910B2 (en) * 2014-10-03 2016-07-12 Applied Materials, Inc. Gas flow profile modulated control of overlay in plasma CVD films
KR20160066340A (ko) * 2014-12-02 2016-06-10 삼성전자주식회사 기판 처리 장치
US10217614B2 (en) * 2015-01-12 2019-02-26 Lam Research Corporation Ceramic gas distribution plate with embedded electrode
TWI727024B (zh) * 2016-04-15 2021-05-11 美商應用材料股份有限公司 微體積沉積腔室
US10622189B2 (en) * 2016-05-11 2020-04-14 Lam Research Corporation Adjustable side gas plenum for edge rate control in a downstream reactor
JP6851188B2 (ja) * 2016-11-28 2021-03-31 東京エレクトロン株式会社 プラズマ処理装置及びシャワーヘッド
JP2019145397A (ja) * 2018-02-22 2019-08-29 東芝メモリ株式会社 半導体製造装置および半導体装置の製造方法
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JP7096080B2 (ja) * 2018-06-18 2022-07-05 株式会社日立ハイテク プラズマ処理装置

Also Published As

Publication number Publication date
JP7579866B2 (ja) 2024-11-08
KR20220131285A (ko) 2022-09-27
TW202147377A (zh) 2021-12-16
JP2025013990A (ja) 2025-01-28
CN115004332A (zh) 2022-09-02
JP2023512201A (ja) 2023-03-24
US20220375725A1 (en) 2022-11-24
KR20260028876A (ko) 2026-03-04
WO2021154673A1 (en) 2021-08-05
TWI904130B (zh) 2025-11-11

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