CN115004332A - 用于高功率高压力处理的分段式气体分配板 - Google Patents

用于高功率高压力处理的分段式气体分配板 Download PDF

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Publication number
CN115004332A
CN115004332A CN202180011541.2A CN202180011541A CN115004332A CN 115004332 A CN115004332 A CN 115004332A CN 202180011541 A CN202180011541 A CN 202180011541A CN 115004332 A CN115004332 A CN 115004332A
Authority
CN
China
Prior art keywords
gas distribution
distribution plate
arcuate portion
gas
ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180011541.2A
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English (en)
Chinese (zh)
Inventor
戈登·彭
穆罕默德·苏海尔·谢克
克雷格·罗斯利
丹·马罗尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN115004332A publication Critical patent/CN115004332A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
CN202180011541.2A 2020-01-28 2021-01-26 用于高功率高压力处理的分段式气体分配板 Pending CN115004332A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062966816P 2020-01-28 2020-01-28
US62/966,816 2020-01-28
PCT/US2021/014988 WO2021154673A1 (en) 2020-01-28 2021-01-26 Segmented gas distribution plate for high-power, high-pressure processes

Publications (1)

Publication Number Publication Date
CN115004332A true CN115004332A (zh) 2022-09-02

Family

ID=77078307

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180011541.2A Pending CN115004332A (zh) 2020-01-28 2021-01-26 用于高功率高压力处理的分段式气体分配板

Country Status (6)

Country Link
US (1) US20220375725A1 (https=)
JP (2) JP7579866B2 (https=)
KR (2) KR102925637B1 (https=)
CN (1) CN115004332A (https=)
TW (1) TWI904130B (https=)
WO (1) WO2021154673A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115547804A (zh) * 2022-09-29 2022-12-30 西实显示高新材料(沈阳)有限公司 大尺寸icp供气模组与icp设备

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI899187B (zh) * 2020-03-19 2025-10-01 美商蘭姆研究公司 基板處理系統
CN116334585A (zh) * 2021-12-23 2023-06-27 中微半导体设备(上海)股份有限公司 一种半导体设备喷淋头及等离子体装置

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US5746875A (en) * 1994-09-16 1998-05-05 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
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US5800621A (en) * 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
US6245192B1 (en) * 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6237528B1 (en) * 2000-01-24 2001-05-29 M.E.C. Technology, Inc. Showerhead electrode assembly for plasma processing
US20040060514A1 (en) * 2002-01-25 2004-04-01 Applied Materials, Inc. A Delaware Corporation Gas distribution showerhead
US20070084406A1 (en) * 2005-10-13 2007-04-19 Joseph Yudovsky Reaction chamber with opposing pockets for gas injection and exhaust
US20070084408A1 (en) * 2005-10-13 2007-04-19 Applied Materials, Inc. Batch processing chamber with diffuser plate and injector assembly
KR101019293B1 (ko) * 2005-11-04 2011-03-07 어플라이드 머티어리얼스, 인코포레이티드 플라즈마-강화 원자층 증착 장치 및 방법
US8440049B2 (en) * 2006-05-03 2013-05-14 Applied Materials, Inc. Apparatus for etching high aspect ratio features
US7854820B2 (en) * 2006-10-16 2010-12-21 Lam Research Corporation Upper electrode backing member with particle reducing features
US20090159002A1 (en) * 2007-12-19 2009-06-25 Kallol Bera Gas distribution plate with annular plenum having a sloped ceiling for uniform distribution
JP3160877U (ja) * 2009-10-13 2010-07-15 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ シャワーヘッド電極アセンブリの端部クランプ留めおよび機械固定される内側電極
WO2011146571A2 (en) * 2010-05-21 2011-11-24 Applied Materials, Inc. Tightly-fitted ceramic insulator on large-area electrode
US9793126B2 (en) * 2010-08-04 2017-10-17 Lam Research Corporation Ion to neutral control for wafer processing with dual plasma source reactor
JP2012216744A (ja) * 2010-11-10 2012-11-08 Sharp Corp 気相成長装置及び気相成長方法
US8562785B2 (en) * 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
US9353439B2 (en) * 2013-04-05 2016-05-31 Lam Research Corporation Cascade design showerhead for transient uniformity
US9390910B2 (en) * 2014-10-03 2016-07-12 Applied Materials, Inc. Gas flow profile modulated control of overlay in plasma CVD films
KR20160066340A (ko) * 2014-12-02 2016-06-10 삼성전자주식회사 기판 처리 장치
US10217614B2 (en) * 2015-01-12 2019-02-26 Lam Research Corporation Ceramic gas distribution plate with embedded electrode
TWI727024B (zh) * 2016-04-15 2021-05-11 美商應用材料股份有限公司 微體積沉積腔室
US10622189B2 (en) * 2016-05-11 2020-04-14 Lam Research Corporation Adjustable side gas plenum for edge rate control in a downstream reactor
JP6851188B2 (ja) * 2016-11-28 2021-03-31 東京エレクトロン株式会社 プラズマ処理装置及びシャワーヘッド
JP2019145397A (ja) * 2018-02-22 2019-08-29 東芝メモリ株式会社 半導体製造装置および半導体装置の製造方法
US10840066B2 (en) * 2018-06-13 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Adjustable fastening device for plasma gas injectors
JP7096080B2 (ja) * 2018-06-18 2022-07-05 株式会社日立ハイテク プラズマ処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115547804A (zh) * 2022-09-29 2022-12-30 西实显示高新材料(沈阳)有限公司 大尺寸icp供气模组与icp设备

Also Published As

Publication number Publication date
JP7579866B2 (ja) 2024-11-08
KR20220131285A (ko) 2022-09-27
TW202147377A (zh) 2021-12-16
JP2025013990A (ja) 2025-01-28
JP2023512201A (ja) 2023-03-24
US20220375725A1 (en) 2022-11-24
KR20260028876A (ko) 2026-03-04
KR102925637B1 (ko) 2026-02-09
WO2021154673A1 (en) 2021-08-05
TWI904130B (zh) 2025-11-11

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