TWI900696B - 圖像顯示裝置之製造方法及圖像顯示裝置 - Google Patents

圖像顯示裝置之製造方法及圖像顯示裝置

Info

Publication number
TWI900696B
TWI900696B TW110143848A TW110143848A TWI900696B TW I900696 B TWI900696 B TW I900696B TW 110143848 A TW110143848 A TW 110143848A TW 110143848 A TW110143848 A TW 110143848A TW I900696 B TWI900696 B TW I900696B
Authority
TW
Taiwan
Prior art keywords
light
layer
insulating film
emitting
image display
Prior art date
Application number
TW110143848A
Other languages
English (en)
Chinese (zh)
Other versions
TW202240880A (zh
Inventor
秋元肇
Original Assignee
日商日亞化學工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日亞化學工業股份有限公司 filed Critical 日商日亞化學工業股份有限公司
Publication of TW202240880A publication Critical patent/TW202240880A/zh
Application granted granted Critical
Publication of TWI900696B publication Critical patent/TWI900696B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
TW110143848A 2020-11-25 2021-11-24 圖像顯示裝置之製造方法及圖像顯示裝置 TWI900696B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020195366 2020-11-25
JP2020-195366 2020-11-25

Publications (2)

Publication Number Publication Date
TW202240880A TW202240880A (zh) 2022-10-16
TWI900696B true TWI900696B (zh) 2025-10-11

Family

ID=81754558

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110143848A TWI900696B (zh) 2020-11-25 2021-11-24 圖像顯示裝置之製造方法及圖像顯示裝置

Country Status (5)

Country Link
US (1) US20230343813A1 (https=)
JP (1) JP7755791B2 (https=)
CN (1) CN116420240B (https=)
TW (1) TWI900696B (https=)
WO (1) WO2022113950A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12074146B2 (en) * 2021-12-03 2024-08-27 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel and manufacturing method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120141799A1 (en) * 2010-12-03 2012-06-07 Francis Kub Film on Graphene on a Substrate and Method and Devices Therefor
TWI626738B (zh) * 2017-04-06 2018-06-11 宏碁股份有限公司 顯示裝置及其製造方法
TW202018827A (zh) * 2018-09-26 2020-05-16 日商日本顯示器股份有限公司 顯示裝置及陣列基板

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8941141B2 (en) * 2006-10-17 2015-01-27 Epistar Corporation Light-emitting device
JP5935643B2 (ja) * 2012-10-10 2016-06-15 サンケン電気株式会社 半導体発光装置
JP2015015321A (ja) * 2013-07-03 2015-01-22 高槻電器工業株式会社 半導体発光素子及びその製造方法
JP6466070B2 (ja) * 2014-03-05 2019-02-06 株式会社東芝 透明導電体およびこれを用いたデバイス
CN104485363A (zh) * 2014-12-30 2015-04-01 京东方科技集团股份有限公司 薄膜晶体管及制备方法、阵列基板及制备方法、显示装置
JP6612119B2 (ja) * 2015-02-16 2019-11-27 株式会社東芝 半導体発光装置
CN106876552B (zh) * 2017-02-27 2019-07-26 深圳市华星光电技术有限公司 微发光二极管阵列基板及显示面板
KR102503168B1 (ko) * 2018-02-08 2023-02-27 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
CN110277421B (zh) * 2018-03-16 2021-10-29 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
KR102607727B1 (ko) 2018-08-01 2023-11-29 삼성디스플레이 주식회사 표시 장치
WO2020188851A1 (ja) * 2019-03-15 2020-09-24 三菱電機株式会社 Ｌｅｄディスプレイ
JP7457255B2 (ja) * 2019-05-08 2024-03-28 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120141799A1 (en) * 2010-12-03 2012-06-07 Francis Kub Film on Graphene on a Substrate and Method and Devices Therefor
TWI626738B (zh) * 2017-04-06 2018-06-11 宏碁股份有限公司 顯示裝置及其製造方法
TW202018827A (zh) * 2018-09-26 2020-05-16 日商日本顯示器股份有限公司 顯示裝置及陣列基板

Also Published As

Publication number Publication date
JP7755791B2 (ja) 2025-10-17
TW202240880A (zh) 2022-10-16
CN116420240B (zh) 2026-02-10
JPWO2022113950A1 (https=) 2022-06-02
US20230343813A1 (en) 2023-10-26
CN116420240A (zh) 2023-07-11
WO2022113950A1 (ja) 2022-06-02

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