CN116420240B - 图像显示装置的制造方法以及图像显示装置 - Google Patents

图像显示装置的制造方法以及图像显示装置

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Publication number
CN116420240B
CN116420240B CN202180065686.0A CN202180065686A CN116420240B CN 116420240 B CN116420240 B CN 116420240B CN 202180065686 A CN202180065686 A CN 202180065686A CN 116420240 B CN116420240 B CN 116420240B
Authority
CN
China
Prior art keywords
layer
light
insulating film
semiconductor layer
image display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202180065686.0A
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English (en)
Chinese (zh)
Other versions
CN116420240A (zh
Inventor
秋元肇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of CN116420240A publication Critical patent/CN116420240A/zh
Application granted granted Critical
Publication of CN116420240B publication Critical patent/CN116420240B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142Two-dimensional arrangements, e.g. asymmetric LED layout
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0361Manufacture or treatment of packages of wavelength conversion means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0363Manufacture or treatment of packages of optical field-shaping means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • H10H20/824Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
CN202180065686.0A 2020-11-25 2021-11-22 图像显示装置的制造方法以及图像显示装置 Active CN116420240B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020195366 2020-11-25
JP2020-195366 2020-11-25
PCT/JP2021/042842 WO2022113950A1 (ja) 2020-11-25 2021-11-22 画像表示装置の製造方法および画像表示装置

Publications (2)

Publication Number Publication Date
CN116420240A CN116420240A (zh) 2023-07-11
CN116420240B true CN116420240B (zh) 2026-02-10

Family

ID=81754558

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180065686.0A Active CN116420240B (zh) 2020-11-25 2021-11-22 图像显示装置的制造方法以及图像显示装置

Country Status (5)

Country Link
US (1) US20230343813A1 (https=)
JP (1) JP7755791B2 (https=)
CN (1) CN116420240B (https=)
TW (1) TWI900696B (https=)
WO (1) WO2022113950A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12074146B2 (en) * 2021-12-03 2024-08-27 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel and manufacturing method thereof

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8941141B2 (en) * 2006-10-17 2015-01-27 Epistar Corporation Light-emitting device
US20120141799A1 (en) * 2010-12-03 2012-06-07 Francis Kub Film on Graphene on a Substrate and Method and Devices Therefor
JP5935643B2 (ja) * 2012-10-10 2016-06-15 サンケン電気株式会社 半導体発光装置
JP2015015321A (ja) * 2013-07-03 2015-01-22 高槻電器工業株式会社 半導体発光素子及びその製造方法
JP6466070B2 (ja) * 2014-03-05 2019-02-06 株式会社東芝 透明導電体およびこれを用いたデバイス
CN104485363A (zh) * 2014-12-30 2015-04-01 京东方科技集团股份有限公司 薄膜晶体管及制备方法、阵列基板及制备方法、显示装置
JP6612119B2 (ja) * 2015-02-16 2019-11-27 株式会社東芝 半導体発光装置
CN106876552B (zh) * 2017-02-27 2019-07-26 深圳市华星光电技术有限公司 微发光二极管阵列基板及显示面板
TWI626738B (zh) * 2017-04-06 2018-06-11 宏碁股份有限公司 顯示裝置及其製造方法
KR102503168B1 (ko) * 2018-02-08 2023-02-27 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
CN110277421B (zh) * 2018-03-16 2021-10-29 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
KR102607727B1 (ko) 2018-08-01 2023-11-29 삼성디스플레이 주식회사 표시 장치
JP7256622B2 (ja) * 2018-09-26 2023-04-12 株式会社ジャパンディスプレイ 表示装置
WO2020188851A1 (ja) * 2019-03-15 2020-09-24 三菱電機株式会社 Ledディスプレイ
JP7457255B2 (ja) * 2019-05-08 2024-03-28 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置

Also Published As

Publication number Publication date
JP7755791B2 (ja) 2025-10-17
TW202240880A (zh) 2022-10-16
JPWO2022113950A1 (https=) 2022-06-02
US20230343813A1 (en) 2023-10-26
TWI900696B (zh) 2025-10-11
CN116420240A (zh) 2023-07-11
WO2022113950A1 (ja) 2022-06-02

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