JPWO2022113950A1 - - Google Patents

Info

Publication number
JPWO2022113950A1
JPWO2022113950A1 JP2022565335A JP2022565335A JPWO2022113950A1 JP WO2022113950 A1 JPWO2022113950 A1 JP WO2022113950A1 JP 2022565335 A JP2022565335 A JP 2022565335A JP 2022565335 A JP2022565335 A JP 2022565335A JP WO2022113950 A1 JPWO2022113950 A1 JP WO2022113950A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022565335A
Other languages
Japanese (ja)
Other versions
JP7755791B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022113950A1 publication Critical patent/JPWO2022113950A1/ja
Application granted granted Critical
Publication of JP7755791B2 publication Critical patent/JP7755791B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
JP2022565335A 2020-11-25 2021-11-22 画像表示装置の製造方法および画像表示装置 Active JP7755791B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020195366 2020-11-25
JP2020195366 2020-11-25
PCT/JP2021/042842 WO2022113950A1 (ja) 2020-11-25 2021-11-22 画像表示装置の製造方法および画像表示装置

Publications (2)

Publication Number Publication Date
JPWO2022113950A1 true JPWO2022113950A1 (https=) 2022-06-02
JP7755791B2 JP7755791B2 (ja) 2025-10-17

Family

ID=81754558

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022565335A Active JP7755791B2 (ja) 2020-11-25 2021-11-22 画像表示装置の製造方法および画像表示装置

Country Status (5)

Country Link
US (1) US20230343813A1 (https=)
JP (1) JP7755791B2 (https=)
CN (1) CN116420240B (https=)
TW (1) TWI900696B (https=)
WO (1) WO2022113950A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12074146B2 (en) * 2021-12-03 2024-08-27 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120141799A1 (en) * 2010-12-03 2012-06-07 Francis Kub Film on Graphene on a Substrate and Method and Devices Therefor
US20180294311A1 (en) * 2017-04-06 2018-10-11 Acer Incorporated Display devices and methods of manufacturing the same
US20200273906A1 (en) * 2018-08-01 2020-08-27 Samsung Display Co., Ltd. Display device
WO2020226044A1 (ja) * 2019-05-08 2020-11-12 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8941141B2 (en) * 2006-10-17 2015-01-27 Epistar Corporation Light-emitting device
JP5935643B2 (ja) * 2012-10-10 2016-06-15 サンケン電気株式会社 半導体発光装置
JP2015015321A (ja) * 2013-07-03 2015-01-22 高槻電器工業株式会社 半導体発光素子及びその製造方法
JP6466070B2 (ja) * 2014-03-05 2019-02-06 株式会社東芝 透明導電体およびこれを用いたデバイス
CN104485363A (zh) * 2014-12-30 2015-04-01 京东方科技集团股份有限公司 薄膜晶体管及制备方法、阵列基板及制备方法、显示装置
JP6612119B2 (ja) * 2015-02-16 2019-11-27 株式会社東芝 半導体発光装置
CN106876552B (zh) * 2017-02-27 2019-07-26 深圳市华星光电技术有限公司 微发光二极管阵列基板及显示面板
KR102503168B1 (ko) * 2018-02-08 2023-02-27 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
CN110277421B (zh) * 2018-03-16 2021-10-29 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
JP7256622B2 (ja) * 2018-09-26 2023-04-12 株式会社ジャパンディスプレイ 表示装置
WO2020188851A1 (ja) * 2019-03-15 2020-09-24 三菱電機株式会社 Ｌｅｄディスプレイ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120141799A1 (en) * 2010-12-03 2012-06-07 Francis Kub Film on Graphene on a Substrate and Method and Devices Therefor
US20180294311A1 (en) * 2017-04-06 2018-10-11 Acer Incorporated Display devices and methods of manufacturing the same
US20200273906A1 (en) * 2018-08-01 2020-08-27 Samsung Display Co., Ltd. Display device
WO2020226044A1 (ja) * 2019-05-08 2020-11-12 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置

Also Published As

Publication number Publication date
JP7755791B2 (ja) 2025-10-17
TW202240880A (zh) 2022-10-16
CN116420240B (zh) 2026-02-10
US20230343813A1 (en) 2023-10-26
TWI900696B (zh) 2025-10-11
CN116420240A (zh) 2023-07-11
WO2022113950A1 (ja) 2022-06-02

Similar Documents

Publication Publication Date Title
JPWO2022113950A1 (https=)
CN305968543S (https=)
CN305966254S (https=)
CN305536745S (https=)
CN305535023S (https=)
CN305534884S (https=)
CN305532660S (https=)
CN305530999S (https=)
CN305529254S (https=)
CN305528398S (https=)
CN306017598S (https=)
CN306011676S (https=)
CN306010781S (https=)
CN306009171S (https=)
CN306006333S (https=)
CN305971077S (https=)
CN305967725S (https=)
CN305965493S (https=)
CN305964179S (https=)
CN305962567S (https=)
CN305961631S (https=)
CN305960790S (https=)
CN305958429S (https=)
CN305957780S (https=)
CN305956971S (https=)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20241022

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250609

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250730

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250903

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250916

R150 Certificate of patent or registration of utility model

Ref document number: 7755791

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150