TWI890937B - 檢查方法、導電性構件及檢查裝置 - Google Patents

檢查方法、導電性構件及檢查裝置

Info

Publication number
TWI890937B
TWI890937B TW111111561A TW111111561A TWI890937B TW I890937 B TWI890937 B TW I890937B TW 111111561 A TW111111561 A TW 111111561A TW 111111561 A TW111111561 A TW 111111561A TW I890937 B TWI890937 B TW I890937B
Authority
TW
Taiwan
Prior art keywords
light
contact
measurement
sample
conductive member
Prior art date
Application number
TW111111561A
Other languages
English (en)
Chinese (zh)
Other versions
TW202247313A (zh
Inventor
中村共則
Original Assignee
日商濱松赫德尼古斯股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商濱松赫德尼古斯股份有限公司 filed Critical 日商濱松赫德尼古斯股份有限公司
Publication of TW202247313A publication Critical patent/TW202247313A/zh
Application granted granted Critical
Publication of TWI890937B publication Critical patent/TWI890937B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64Fluorescence; Phosphorescence
    • G01N21/6489Photoluminescence of semiconductors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2607Circuits therefor
    • G01R31/2632Circuits therefor for testing diodes
    • G01R31/2635Testing light-emitting diodes, laser diodes or photodiodes
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J2001/4247Photometry, e.g. photographic exposure meter using electric radiation detectors for testing lamps or other light sources
    • G01J2001/4252Photometry, e.g. photographic exposure meter using electric radiation detectors for testing lamps or other light sources for testing LED's
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64Fluorescence; Phosphorescence
    • G01N21/645Specially adapted constructive features of fluorimeters
    • G01N21/6456Spatial resolved fluorescence measurements; Imaging
    • G01N2021/646Detecting fluorescent inhomogeneities at a position, e.g. for detecting defects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64Fluorescence; Phosphorescence
    • G01N21/645Specially adapted constructive features of fluorimeters
    • G01N2021/6484Optical fibres

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Optics & Photonics (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Electroluminescent Light Sources (AREA)
TW111111561A 2021-04-01 2022-03-28 檢查方法、導電性構件及檢查裝置 TWI890937B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-062950 2021-04-01
JP2021062950 2021-04-01

Publications (2)

Publication Number Publication Date
TW202247313A TW202247313A (zh) 2022-12-01
TWI890937B true TWI890937B (zh) 2025-07-21

Family

ID=83458707

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111111561A TWI890937B (zh) 2021-04-01 2022-03-28 檢查方法、導電性構件及檢查裝置

Country Status (7)

Country Link
US (1) US20240168080A1 (https=)
EP (1) EP4318556A4 (https=)
JP (1) JPWO2022209263A1 (https=)
KR (1) KR20230164649A (https=)
CN (1) CN117063062A (https=)
TW (1) TWI890937B (https=)
WO (1) WO2022209263A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070170933A1 (en) * 2006-01-23 2007-07-26 Maxmile Technologies, Llc Method and Apparatus for Nondestructively Evaluating Light-Emitting Materials
TW201341978A (zh) * 2006-02-21 2013-10-16 尼康股份有限公司 曝光裝置及曝光方法、以及元件製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10135291A (ja) * 1996-10-30 1998-05-22 Sharp Corp 半導体装置の評価方法及びその評価装置
JP2008002858A (ja) * 2006-06-21 2008-01-10 Sumitomo Electric Ind Ltd 光半導体検査装置
WO2008029730A1 (en) * 2006-09-08 2008-03-13 Konica Minolta Medical & Graphic, Inc. Semiconductor fluorescent microparticle, biosubstance fluorescent labeling agent and method of bioassay
JP2012202866A (ja) * 2011-03-25 2012-10-22 Toshiba Corp パターン検査装置およびパターン検査方法
KR101182822B1 (ko) * 2011-03-29 2012-09-13 삼성전자주식회사 발광소자 검사장치 및 방법
JP6005949B2 (ja) * 2012-02-24 2016-10-12 デンカ株式会社 導電性粘着シート及び電子部品の製造方法
JP6076133B2 (ja) 2013-02-27 2017-02-08 東レエンジニアリング株式会社 蛍光発光体の検査装置
JP2015021805A (ja) * 2013-07-18 2015-02-02 株式会社日立ハイテクノロジーズ レプリカ採取装置およびそれを備えた検査システム
JP6104112B2 (ja) * 2013-09-18 2017-03-29 株式会社アイテス 太陽電池検査装置、及び太陽電池検査方法
DE102015213460A1 (de) * 2015-07-17 2017-01-19 Osram Gmbh Wellenlängenumwandlung von Primärlicht mittels eines Konversionskörpers
KR101720165B1 (ko) * 2015-09-02 2017-04-03 한양대학교 에리카산학협력단 발광다이오드의 상태 밀도 분석 장치 및 방법
US11474144B2 (en) * 2018-12-21 2022-10-18 Industrial Technology Research Institute Method for inspecting light-emitting diodes and inspection apparatus
EP3951845B1 (en) * 2019-03-28 2025-06-25 Hamamatsu Photonics K.K. Inspection device and inspection method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070170933A1 (en) * 2006-01-23 2007-07-26 Maxmile Technologies, Llc Method and Apparatus for Nondestructively Evaluating Light-Emitting Materials
TW201341978A (zh) * 2006-02-21 2013-10-16 尼康股份有限公司 曝光裝置及曝光方法、以及元件製造方法

Also Published As

Publication number Publication date
US20240168080A1 (en) 2024-05-23
CN117063062A (zh) 2023-11-14
EP4318556A1 (en) 2024-02-07
JPWO2022209263A1 (https=) 2022-10-06
KR20230164649A (ko) 2023-12-04
EP4318556A4 (en) 2025-04-16
TW202247313A (zh) 2022-12-01
WO2022209263A1 (ja) 2022-10-06

Similar Documents

Publication Publication Date Title
JP5457384B2 (ja) 液処理装置及び液処理方法
CN107796825B (zh) 器件检测方法
CN101853797B (zh) 用于检测晶片的系统和方法
TWI819202B (zh) 檢查裝置及檢查方法
US10718722B2 (en) Method of inspecting back surface of epitaxial wafer, epitaxial wafer back surface inspection apparatus, method of managing lift pin of epitaxial growth apparatus, and method of producing epitaxial wafer
US12072289B2 (en) Inspection apparatus comprising a first imager imaging fluorescence having a wavelength longer than a first wavelength and a second imager imaging fluorescence having a wavelength shorter than a second wavelength and inspection method
US20130114074A1 (en) Substrate inspection apparatus and substrate inspection method
US10338005B2 (en) Apparatus for inspecting back surface of epitaxial wafer and method of inspecting back surface of epitaxial wafer using the same
US10215695B1 (en) Inspection system and method for detecting defects at a materials interface
WO2013069100A1 (ja) プリント基板の検査装置
KR100281881B1 (ko) 인쇄회로기판의크림솔더검사장치및검사방법
JP7730890B2 (ja) 製造方法、検査方法、及び検査装置
JP4228778B2 (ja) パターン検査装置
US11280744B2 (en) Appearance inspection apparatus and appearance inspection method
TWI834843B (zh) 檢查裝置及檢查方法
TWI890937B (zh) 檢查方法、導電性構件及檢查裝置
US7800568B2 (en) Apparatus and method for inspecting liquid crystal display
TWI498543B (zh) 自動晶圓光學檢測裝置及檢測晶圓表面均勻性的方法
KR102020879B1 (ko) 층간 절연체로 투명 pid를 갖는 다층레이어 패널의 표면검사장치
JP2011196897A (ja) 検査装置
TWI919729B (zh) 檢查裝置
KR20100062654A (ko) 패턴 검사장치 및 그 방법