TWI887291B - 蝕刻方法及電漿處理裝置 - Google Patents

蝕刻方法及電漿處理裝置 Download PDF

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Publication number
TWI887291B
TWI887291B TW109138386A TW109138386A TWI887291B TW I887291 B TWI887291 B TW I887291B TW 109138386 A TW109138386 A TW 109138386A TW 109138386 A TW109138386 A TW 109138386A TW I887291 B TWI887291 B TW I887291B
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TW
Taiwan
Prior art keywords
silicon
gas
film
substrate
mask
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TW109138386A
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English (en)
Chinese (zh)
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TW202125583A (zh
Inventor
横山喬大
戸村幕樹
木原嘉英
大内田聡
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日商東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H10P14/40—
    • H10P14/416—
    • H10P14/69215—
    • H10P14/69433—
    • H10P50/268—
    • H10P50/283—
    • H10P50/71—
    • H10P50/73—
    • H10P72/00—
    • H10P72/0421—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Photovoltaic Devices (AREA)
TW109138386A 2019-11-08 2020-11-04 蝕刻方法及電漿處理裝置 TWI887291B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2019-203326 2019-11-08
JP2019203326 2019-11-08
JP2020148214A JP7599872B2 (ja) 2019-11-08 2020-09-03 エッチング方法及びプラズマ処理装置
JP2020-148214 2020-09-03

Publications (2)

Publication Number Publication Date
TW202125583A TW202125583A (zh) 2021-07-01
TWI887291B true TWI887291B (zh) 2025-06-21

Family

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Family Applications (2)

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TW109138386A TWI887291B (zh) 2019-11-08 2020-11-04 蝕刻方法及電漿處理裝置
TW114119470A TW202536933A (zh) 2019-11-08 2020-11-04 蝕刻方法及電漿處理裝置

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US (2) US12387941B2 (enExample)
JP (2) JP7599872B2 (enExample)
KR (2) KR102893533B1 (enExample)
TW (2) TWI887291B (enExample)
WO (1) WO2021090516A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7412257B2 (ja) * 2019-12-20 2024-01-12 東京エレクトロン株式会社 エッチング方法、基板処理装置、及び基板処理システム
JP7763251B2 (ja) * 2021-07-27 2025-10-31 東京エレクトロン株式会社 エッチング方法、半導体装置の製造方法、エッチングプログラムおよびプラズマ処理装置
JP7667060B2 (ja) * 2021-10-22 2025-04-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
JP7674223B2 (ja) 2021-11-01 2025-05-09 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
JP2023082809A (ja) * 2021-12-03 2023-06-15 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US11694876B2 (en) * 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
JPWO2023233673A1 (enExample) * 2022-06-01 2023-12-07
TW202425121A (zh) * 2022-08-25 2024-06-16 日商東京威力科創股份有限公司 蝕刻方法及電漿處理裝置
JP2025529122A (ja) * 2022-08-31 2025-09-04 ラム リサーチ コーポレーション 窒化物熱原子層エッチング
JP2025530844A (ja) * 2022-09-13 2025-09-17 ラム リサーチ コーポレーション スタック内にフィーチャをエッチングするための方法
JP7773971B2 (ja) * 2022-12-27 2025-11-20 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
KR20250150572A (ko) * 2023-02-13 2025-10-20 도쿄엘렉트론가부시키가이샤 에칭 방법 및 플라즈마 처리 장치
KR20240128194A (ko) * 2023-02-17 2024-08-26 피에스케이 주식회사 기판 처리 방법 및 장치
WO2025150427A1 (ja) * 2024-01-09 2025-07-17 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
WO2025204638A1 (ja) * 2024-03-25 2025-10-02 東京エレクトロン株式会社 プラズマ処理装置、電源システム、及びプラズマ処理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01103837A (ja) * 1987-07-31 1989-04-20 Hitachi Ltd ドライエッチング方法
JPH08181116A (ja) * 1994-12-26 1996-07-12 Mitsubishi Electric Corp ドライエッチング方法及びドライエッチング装置

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55107780A (en) * 1979-02-07 1980-08-19 Hitachi Ltd Etching method
US4450042A (en) * 1982-07-06 1984-05-22 Texas Instruments Incorporated Plasma etch chemistry for anisotropic etching of silicon
JPH0262039A (ja) * 1988-08-29 1990-03-01 Hitachi Ltd 多層素子の微細加工方法およびその装置
JPH07147273A (ja) 1993-11-24 1995-06-06 Tokyo Electron Ltd エッチング処理方法
TW473857B (en) 1996-04-26 2002-01-21 Hitachi Ltd Method of manufacturing semiconductor device
US6635185B2 (en) 1997-12-31 2003-10-21 Alliedsignal Inc. Method of etching and cleaning using fluorinated carbonyl compounds
JP4153606B2 (ja) * 1998-10-22 2008-09-24 東京エレクトロン株式会社 プラズマエッチング方法およびプラズマエッチング装置
JP2001035832A (ja) * 1999-07-16 2001-02-09 Canon Inc ドライエッチング方法
US7338907B2 (en) 2004-10-04 2008-03-04 Sharp Laboratories Of America, Inc. Selective etching processes of silicon nitride and indium oxide thin films for FeRAM device applications
JP5041696B2 (ja) * 2005-11-15 2012-10-03 パナソニック株式会社 ドライエッチング方法
US7951683B1 (en) 2007-04-06 2011-05-31 Novellus Systems, Inc In-situ process layer using silicon-rich-oxide for etch selectivity in high AR gapfill
JP5235596B2 (ja) 2008-10-15 2013-07-10 東京エレクトロン株式会社 Ｓｉエッチング方法
US7993937B2 (en) 2009-09-23 2011-08-09 Tokyo Electron Limited DC and RF hybrid processing system
US8193094B2 (en) 2010-06-21 2012-06-05 Taiwan Semiconductor Manufacturing Company, Ltd. Post CMP planarization by cluster ION beam etch
US8608973B1 (en) 2012-06-01 2013-12-17 Lam Research Corporation Layer-layer etch of non volatile materials using plasma
JP2014049466A (ja) 2012-08-29 2014-03-17 Tokyo Electron Ltd エッチング処理方法及び基板処理装置
JP6154820B2 (ja) * 2012-11-01 2017-06-28 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US20140248718A1 (en) 2013-03-04 2014-09-04 Jisoo Kim Patterning of magnetic tunnel junction (mtj) film stacks
JP6230930B2 (ja) 2014-02-17 2017-11-15 東京エレクトロン株式会社 半導体装置の製造方法
TWI658509B (zh) 2014-06-18 2019-05-01 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude 用於ｔｓｖ／ｍｅｍｓ／功率元件蝕刻的化學物質
JP6327970B2 (ja) * 2014-06-19 2018-05-23 東京エレクトロン株式会社 絶縁膜をエッチングする方法
JP6199250B2 (ja) 2014-07-25 2017-09-20 東京エレクトロン株式会社 被処理体を処理する方法
JP6400425B2 (ja) 2014-10-15 2018-10-03 東京エレクトロン株式会社 多層膜をエッチングする方法
JP6334369B2 (ja) * 2014-11-11 2018-05-30 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US9997373B2 (en) 2014-12-04 2018-06-12 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US10246772B2 (en) 2015-04-01 2019-04-02 Applied Materials, Inc. Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices
JP6498022B2 (ja) 2015-04-22 2019-04-10 東京エレクトロン株式会社 エッチング処理方法
JP6327295B2 (ja) 2015-08-12 2018-05-23 セントラル硝子株式会社 ドライエッチング方法
US9543148B1 (en) * 2015-09-01 2017-01-10 Lam Research Corporation Mask shrink layer for high aspect ratio dielectric etch
US10861693B2 (en) 2015-12-18 2020-12-08 Applied Materials, Inc. Cleaning method
JP6479698B2 (ja) * 2016-02-18 2019-03-06 東芝メモリ株式会社 半導体製造装置および半導体装置の製造方法
WO2017176027A1 (ko) 2016-04-05 2017-10-12 주식회사 테스 실리콘산화막의 선택적 식각 방법
JP6568822B2 (ja) 2016-05-16 2019-08-28 東京エレクトロン株式会社 エッチング方法
US9960049B2 (en) 2016-05-23 2018-05-01 Applied Materials, Inc. Two-step fluorine radical etch of hafnium oxide
US10790140B2 (en) * 2017-02-14 2020-09-29 Applied Materials, Inc. High deposition rate and high quality nitride
JP7045152B2 (ja) * 2017-08-18 2022-03-31 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10410878B2 (en) 2017-10-31 2019-09-10 American Air Liquide, Inc. Hydrofluorocarbons containing —NH2 functional group for 3D NAND and DRAM applications
US10453684B1 (en) * 2018-05-09 2019-10-22 Applied Materials, Inc. Method for patterning a material layer with desired dimensions

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01103837A (ja) * 1987-07-31 1989-04-20 Hitachi Ltd ドライエッチング方法
JPH08181116A (ja) * 1994-12-26 1996-07-12 Mitsubishi Electric Corp ドライエッチング方法及びドライエッチング装置

Also Published As

Publication number Publication date
WO2021090516A1 (ja) 2021-05-14
TW202125583A (zh) 2021-07-01
KR102893533B1 (ko) 2025-12-01
JP2025029128A (ja) 2025-03-05
JP2021077865A (ja) 2021-05-20
KR20250171242A (ko) 2025-12-08
US20250349552A1 (en) 2025-11-13
JP7599872B2 (ja) 2024-12-16
KR20210056240A (ko) 2021-05-18
JP7793741B2 (ja) 2026-01-05
TW202536933A (zh) 2025-09-16
US20220328323A1 (en) 2022-10-13
US12387941B2 (en) 2025-08-12

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