TWI873706B - 鈀鈷氧化物薄膜、赤鐵礦型氧化物薄膜、具有赤鐵礦型氧化物薄膜之蕭特基電極、鈀鈷氧化物薄膜之製造方法及赤鐵礦型氧化物薄膜之製造方法 - Google Patents

鈀鈷氧化物薄膜、赤鐵礦型氧化物薄膜、具有赤鐵礦型氧化物薄膜之蕭特基電極、鈀鈷氧化物薄膜之製造方法及赤鐵礦型氧化物薄膜之製造方法 Download PDF

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TWI873706B
TWI873706B TW112125619A TW112125619A TWI873706B TW I873706 B TWI873706 B TW I873706B TW 112125619 A TW112125619 A TW 112125619A TW 112125619 A TW112125619 A TW 112125619A TW I873706 B TWI873706 B TW I873706B
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thin film
palladium
film
cobalt oxide
oxide
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TW112125619A
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Chinese (zh)
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TW202409318A (zh
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原田尚之
政広泰
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國立研究開發法人物質 材料研究機構
日商田中貴金屬工業股份有限公司
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TW112125619A 2022-07-11 2023-07-10 鈀鈷氧化物薄膜、赤鐵礦型氧化物薄膜、具有赤鐵礦型氧化物薄膜之蕭特基電極、鈀鈷氧化物薄膜之製造方法及赤鐵礦型氧化物薄膜之製造方法 TWI873706B (zh)

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TWI873706B true TWI873706B (zh) 2025-02-21

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