TWI858227B - 將micro-led組裝至基材上的方法及系統 - Google Patents

將micro-led組裝至基材上的方法及系統 Download PDF

Info

Publication number
TWI858227B
TWI858227B TW110103438A TW110103438A TWI858227B TW I858227 B TWI858227 B TW I858227B TW 110103438 A TW110103438 A TW 110103438A TW 110103438 A TW110103438 A TW 110103438A TW I858227 B TWI858227 B TW I858227B
Authority
TW
Taiwan
Prior art keywords
substrate
transfer
microled
chips
microled chips
Prior art date
Application number
TW110103438A
Other languages
English (en)
Chinese (zh)
Other versions
TW202135279A (zh
Inventor
王蘊達
呂正平
謙 王
索拉布 雷喬杜里
Original Assignee
美商帕洛阿爾托研究中心公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商帕洛阿爾托研究中心公司 filed Critical 美商帕洛阿爾托研究中心公司
Publication of TW202135279A publication Critical patent/TW202135279A/zh
Application granted granted Critical
Publication of TWI858227B publication Critical patent/TWI858227B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0438—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/04—Polysiloxanes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes
    • G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/232—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising connection or disconnection of parts of a device in response to a measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7428—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW110103438A 2020-03-02 2021-01-29 將micro-led組裝至基材上的方法及系統 TWI858227B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/805,911 2020-03-02
US16/805,911 US11348905B2 (en) 2020-03-02 2020-03-02 Method and system for assembly of micro-LEDs onto a substrate

Publications (2)

Publication Number Publication Date
TW202135279A TW202135279A (zh) 2021-09-16
TWI858227B true TWI858227B (zh) 2024-10-11

Family

ID=74668620

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110103438A TWI858227B (zh) 2020-03-02 2021-01-29 將micro-led組裝至基材上的方法及系統

Country Status (6)

Country Link
US (1) US11348905B2 (enExample)
EP (1) EP3876270B1 (enExample)
JP (1) JP7514777B2 (enExample)
KR (1) KR102804109B1 (enExample)
CN (1) CN113345878B (enExample)
TW (1) TWI858227B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12224271B2 (en) * 2020-03-10 2025-02-11 Meta Platforms Technologies, Llc Integrating control circuits with light emissive circuits with dissimilar wafer sizes
WO2021195755A1 (en) * 2020-03-30 2021-10-07 Vuereal Inc. Offset alignment and repair in micro device transfer
US11677060B2 (en) * 2020-04-13 2023-06-13 Electronics and Teleocmmunications Research Institute Method for transferring and bonding of devices
WO2022174359A1 (en) * 2021-02-22 2022-08-25 Vuereal Inc. Transfer of micro devices
WO2022230952A1 (ja) * 2021-04-27 2022-11-03 昭和電工マテリアルズ株式会社 Led移設部材及びled装置の製造方法
US12263576B2 (en) 2021-08-19 2025-04-01 Hyundai Mobis Co., Ltd. Robot system for automated assembly of modular component
CN115771214A (zh) * 2021-09-09 2023-03-10 日月光半导体制造股份有限公司 用于形成多个分离组件的模具及装置
EP4410067A4 (en) * 2021-09-30 2025-10-01 Univ Texas TOOL AND METHODS FOR TAKER-PLACER ASSEMBLY
TWI807544B (zh) * 2021-12-17 2023-07-01 友達光電股份有限公司 顯示面板及其製造方法
KR102700929B1 (ko) * 2021-12-21 2024-08-30 한국광기술원 Led 측정장치
CN114709163A (zh) * 2022-03-30 2022-07-05 北京石油化工学院 液气双态Mini/Micro LED芯片巨量转移用晶膜及制作方法
CN115101439B (zh) * 2022-05-27 2025-05-02 黄招凤 物料传送系统及方法
KR102787169B1 (ko) * 2022-09-06 2025-03-26 삼성전자주식회사 마이크로 반도체 칩의 대량 전사 방법 및 대량 전사 장치
CN117976569A (zh) * 2022-10-25 2024-05-03 群创光电股份有限公司 电子装置及其制作方法
WO2024193797A1 (en) * 2023-03-17 2024-09-26 Ams-Osram International Gmbh Method for evaluating optoelectronic components and test arrangement
WO2025015422A1 (en) * 2023-07-18 2025-01-23 Vuereal Inc. Chiplet with integrated led on display backplane
TWI872659B (zh) * 2023-08-23 2025-02-11 雷傑科技股份有限公司 晶粒填補方法
WO2025057271A1 (ja) * 2023-09-11 2025-03-20 東京エレクトロン株式会社 接合装置、接合システム、接合方法、載せ替え装置、及び載せ替え方法
TWI879346B (zh) * 2023-12-26 2025-04-01 前源科技股份有限公司 電子元件的接合方法與巨量轉移電子元件的方法
TWI890245B (zh) * 2023-12-27 2025-07-11 錼創顯示科技股份有限公司 元件加工設備

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180166429A1 (en) * 2016-12-13 2018-06-14 Hong Kong Beida Jade Bird Display Limited Mass Transfer Of Micro Structures Using Adhesives
CN110546751A (zh) * 2018-06-11 2019-12-06 厦门三安光电有限公司 发光组件

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3994681B2 (ja) * 2001-04-11 2007-10-24 ソニー株式会社 素子の配列方法及び画像表示装置の製造方法
JP4701537B2 (ja) 2001-05-16 2011-06-15 ソニー株式会社 素子の転写方法及び画像表示装置の製造方法
JP2003162231A (ja) * 2001-11-26 2003-06-06 Sony Corp 素子の製造方法、素子の配列方法及び画像表示装置の製造方法
US7959261B2 (en) 2007-05-08 2011-06-14 Lexmark International, Inc. Micro-fluid ejection devices having reduced input/output addressable heaters
WO2009143462A2 (en) * 2008-05-22 2009-11-26 Vi Systems Gmbh Method for attaching optical components onto silicon-based integrated circuits
US8198369B2 (en) 2008-08-05 2012-06-12 GM Global Technology Operations LLC Shape memory polymers with surface having dangling adhesive polymeric chains and methods of making and using the same
CN101656233B (zh) 2008-08-22 2012-10-24 群康科技(深圳)有限公司 薄膜晶体管基板的制造方法
JP2010129700A (ja) 2008-11-26 2010-06-10 Nitto Denko Corp ダイシング・ダイボンドフィルム及び半導体装置の製造方法
US9496155B2 (en) 2010-03-29 2016-11-15 Semprius, Inc. Methods of selectively transferring active components
KR100998087B1 (ko) 2010-04-01 2010-12-03 한국기계연구원 능동 탈부착 척
WO2013010113A1 (en) 2011-07-14 2013-01-17 The Board Of Trustees Of The University Of Illinois Non-contact transfer printing
US9412727B2 (en) 2011-09-20 2016-08-09 Semprius, Inc. Printing transferable components using microstructured elastomeric surfaces with pressure modulated reversible adhesion
DE102012112965A1 (de) 2012-12-21 2014-06-26 Leibniz-Institut Für Neue Materialien Gemeinnützige Gesellschaft Mit Beschränkter Haftung Gegenstand mit schaltbarer Adhäsion
US10046353B2 (en) 2014-06-06 2018-08-14 The Board Of Trustees Of The University Of Illinois Microscale stamp with reversible adhesion for transfer printing
US9698134B2 (en) * 2014-11-27 2017-07-04 Sct Technology, Ltd. Method for manufacturing a light emitted diode display
US20160175238A1 (en) 2014-12-19 2016-06-23 L'oreal Hair cosmetic composition containing a polyurethane latex polymer and a silicone-organic polymer compound
DE112016000447B4 (de) 2015-01-23 2026-02-12 Vuereal Inc. Selektiver Mikrovorrichtungstransfer zu einem Empfängersubstrat und Empfängersubstratstruktur
CN111028715A (zh) * 2015-07-23 2020-04-17 首尔半导体株式会社 显示装置
WO2017037475A1 (en) * 2015-09-02 2017-03-09 Oculus Vr, Llc Assembly of semiconductor devices
GB2541970B (en) 2015-09-02 2020-08-19 Facebook Tech Llc Display manufacture
US10252083B2 (en) 2015-09-23 2019-04-09 Varian Medical Systems Inc. Systems, methods, and devices for high-energy irradiation
US20170215280A1 (en) 2016-01-21 2017-07-27 Vuereal Inc. Selective transfer of micro devices
US10698986B2 (en) * 2016-05-12 2020-06-30 Markany Inc. Method and apparatus for embedding and extracting text watermark
KR102427231B1 (ko) 2016-06-10 2022-07-28 어플라이드 머티어리얼스, 인코포레이티드 마이크로-디바이스들의 무마스크 병렬 픽-앤-플레이스 이송
US10533080B2 (en) 2016-07-26 2020-01-14 The Board Of Trustees Of The University Of Illinois Transfer printing using shape memory polymers
CN107833526B (zh) * 2016-09-15 2021-05-28 伊乐视有限公司 拾取-移除系统以及发光显示器的修复方法
DE102016221281A1 (de) * 2016-10-28 2018-05-03 Osram Opto Semiconductors Gmbh Verfahren zum transferieren von halbleiterchips und transferwerkzeug
EP3539153A2 (en) * 2016-11-11 2019-09-18 Qmat, Inc. Micro-light emitting diode (led) fabrication by layer transfer
US10978530B2 (en) * 2016-11-25 2021-04-13 Vuereal Inc. Integration of microdevices into system substrate
US10403537B2 (en) 2017-03-10 2019-09-03 Facebook Technologies, Llc Inorganic light emitting diode (ILED) assembly via direct bonding
TWI681472B (zh) 2017-04-10 2020-01-01 英屬開曼群島商錼創科技股份有限公司 傳輸微小元件的方法
TWI661533B (zh) * 2017-06-07 2019-06-01 Asti Global Inc., Taiwan 晶片安裝系統以及晶片安裝方法
EP3639297B1 (en) * 2017-06-12 2026-03-18 Kulicke & Soffa Netherlands B.V. Parallel assembly of discrete components onto a substrate
US20190043843A1 (en) * 2017-08-01 2019-02-07 Innolux Corporation Methods for manufacturing a display device
US20190058081A1 (en) * 2017-08-18 2019-02-21 Khaled Ahmed Micro light-emitting diode (led) display and assembly apparatus
TWI653694B (zh) * 2017-09-13 2019-03-11 英屬開曼群島商錼創科技股份有限公司 微型發光元件陣列製造方法、轉移載板以及微型發光元件陣列
US10615063B2 (en) * 2017-11-08 2020-04-07 Facebook Technologies, Llc Vacuum pick-up head for semiconductor chips
TWI689105B (zh) * 2017-12-19 2020-03-21 優顯科技股份有限公司 光電半導體戳記及其製造方法、與光電半導體裝置
US11538785B2 (en) * 2017-12-19 2022-12-27 Ultra Display Technology Corp. Method of using optoelectronic semiconductor stamp to manufacture optoelectronic semiconductor device
KR102428029B1 (ko) * 2017-12-20 2022-08-02 (주)포인트엔지니어링 마이크로 led 전사헤드
US11404400B2 (en) 2018-01-24 2022-08-02 Apple Inc. Micro LED based display panel
JP6916525B2 (ja) * 2018-02-06 2021-08-11 株式会社ブイ・テクノロジー Ledディスプレイの製造方法
KR20190114334A (ko) * 2018-03-29 2019-10-10 (주)포인트엔지니어링 마이크로 led 검사 및 리페어 방법
WO2019246366A1 (en) 2018-06-22 2019-12-26 Veeco Instruments Inc. Micro-led transfer methods using light-based debonding
CN109473532B (zh) * 2018-11-20 2020-11-06 合肥京东方光电科技有限公司 一种Micro LED显示基板的制作方法
JP2019140400A (ja) * 2019-04-08 2019-08-22 ゴルテック.インク マイクロ発光ダイオードの事前排除方法、製造方法、装置及び電子機器
US11521887B2 (en) * 2019-12-18 2022-12-06 Seoul Viosys Co., Ltd. Method of transferring micro LED and micro LED transferring apparatus
JP2021110875A (ja) * 2020-01-14 2021-08-02 三星電子株式会社Samsung Electronics Co., Ltd. ディスプレイ装置の製造方法、ディスプレイ装置、およびディスプレイ装置製造用中間体

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180166429A1 (en) * 2016-12-13 2018-06-14 Hong Kong Beida Jade Bird Display Limited Mass Transfer Of Micro Structures Using Adhesives
CN110546751A (zh) * 2018-06-11 2019-12-06 厦门三安光电有限公司 发光组件

Also Published As

Publication number Publication date
EP3876270B1 (en) 2025-01-08
US20210272935A1 (en) 2021-09-02
US11348905B2 (en) 2022-05-31
EP3876270A1 (en) 2021-09-08
KR102804109B1 (ko) 2025-05-09
JP7514777B2 (ja) 2024-07-11
JP2021140144A (ja) 2021-09-16
KR20210111155A (ko) 2021-09-10
CN113345878B (zh) 2024-04-05
TW202135279A (zh) 2021-09-16
CN113345878A (zh) 2021-09-03

Similar Documents

Publication Publication Date Title
KR102804109B1 (ko) 기판 상에 마이크로led를 조립하기 위한 방법 및 시스템
JP7441726B2 (ja) 選択可能な表面接着力転写素子を利用した転写基板
CN110148655B (zh) 微型led芯片巨量转移方法
US10222698B2 (en) Chiplets with wicking posts
JP2021140144A5 (enExample)
KR102647518B1 (ko) 강도의 변화에 기초하여 물체를 선택가능하게 보유 및 해제하는 전사 요소
CN107833526B (zh) 拾取-移除系统以及发光显示器的修复方法
US11393730B2 (en) Pressure-activated electrical interconnection with additive repair
CN112735972B (zh) 一种微元件的转移基板及其制造方法
CN110391165A (zh) 转移载板与晶粒载板
CN113270354B (zh) 一种静电场控制的芯片阵列扩张和巨量转移方法及其系统
CN118658938A (zh) 用以转移电子元件的方法及制造发光二极管显示器的方法
CN112750742A (zh) 取料装置及其取料方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees