TWI856588B - 反射型遮罩基底、反射型遮罩、反射型遮罩基底之製造方法、及反射型遮罩之製造方法 - Google Patents

反射型遮罩基底、反射型遮罩、反射型遮罩基底之製造方法、及反射型遮罩之製造方法 Download PDF

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Publication number
TWI856588B
TWI856588B TW112111880A TW112111880A TWI856588B TW I856588 B TWI856588 B TW I856588B TW 112111880 A TW112111880 A TW 112111880A TW 112111880 A TW112111880 A TW 112111880A TW I856588 B TWI856588 B TW I856588B
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TW
Taiwan
Prior art keywords
film
protective film
reflective mask
reflective
layer
Prior art date
Application number
TW112111880A
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English (en)
Chinese (zh)
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TW202403432A (zh
Inventor
加藤匠馬
赤木大二郎
岡東健
大石竜輔
小野佑介
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日商Ａｇｃ股份有限公司
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Publication of TW202403432A publication Critical patent/TW202403432A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
TW112111880A 2022-04-01 2023-03-29 反射型遮罩基底、反射型遮罩、反射型遮罩基底之製造方法、及反射型遮罩之製造方法 TWI856588B (zh)

Applications Claiming Priority (2)

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JP2022061684 2022-04-01
JP2022-061684 2022-04-01

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Publication Number Publication Date
TW202403432A TW202403432A (zh) 2024-01-16
TWI856588B true TWI856588B (zh) 2024-09-21

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TW112111880A TWI856588B (zh) 2022-04-01 2023-03-29 反射型遮罩基底、反射型遮罩、反射型遮罩基底之製造方法、及反射型遮罩之製造方法
TW113131113A TWI896295B (zh) 2022-04-01 2023-03-29 反射型遮罩基底、反射型遮罩、反射型遮罩基底之製造方法、及反射型遮罩之製造方法
TW114129628A TW202544547A (zh) 2022-04-01 2023-03-29 反射型遮罩基底、反射型遮罩、反射型遮罩基底之製造方法、及反射型遮罩之製造方法

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TW114129628A TW202544547A (zh) 2022-04-01 2023-03-29 反射型遮罩基底、反射型遮罩、反射型遮罩基底之製造方法、及反射型遮罩之製造方法

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US (3) US12001133B2 (https=)
JP (3) JP7367902B1 (https=)
KR (3) KR102685023B1 (https=)
TW (3) TWI856588B (https=)
WO (1) WO2023190360A1 (https=)

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JP7731951B2 (ja) * 2023-10-05 2025-09-01 レーザーテック株式会社 画像処理装置、検査装置、画像処理方法及び検査方法
WO2025079375A1 (ja) * 2023-10-10 2025-04-17 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
WO2025115587A1 (ja) * 2023-11-29 2025-06-05 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
WO2025253899A1 (ja) * 2024-06-03 2025-12-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法

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TW201928505A (zh) * 2017-11-27 2019-07-16 日商Ｈｏｙａ股份有限公司 反射型光罩基底、反射型光罩及其製造方法、以及半導體裝置之製造方法
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Publication number Publication date
TWI896295B (zh) 2025-09-01
KR20250153884A (ko) 2025-10-27
KR102685023B1 (ko) 2024-07-16
KR20230156410A (ko) 2023-11-14
TW202447329A (zh) 2024-12-01
JP2023171930A (ja) 2023-12-05
US20240045320A1 (en) 2024-02-08
US12306530B2 (en) 2025-05-20
JP7529119B2 (ja) 2024-08-06
US12001133B2 (en) 2024-06-04
TW202403432A (zh) 2024-01-16
US20250251658A1 (en) 2025-08-07
US20240280890A1 (en) 2024-08-22
JP7367902B1 (ja) 2023-10-24
KR20240115334A (ko) 2024-07-25
JPWO2023190360A1 (https=) 2023-10-05
KR102882943B1 (ko) 2025-11-07
JP2024133671A (ja) 2024-10-02
TW202544547A (zh) 2025-11-16
WO2023190360A1 (ja) 2023-10-05

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