TWI856062B - 攝像元件、積層型攝像元件及固體攝像裝置以及攝像元件之製造方法 - Google Patents

攝像元件、積層型攝像元件及固體攝像裝置以及攝像元件之製造方法 Download PDF

Info

Publication number
TWI856062B
TWI856062B TW109106399A TW109106399A TWI856062B TW I856062 B TWI856062 B TW I856062B TW 109106399 A TW109106399 A TW 109106399A TW 109106399 A TW109106399 A TW 109106399A TW I856062 B TWI856062 B TW I856062B
Authority
TW
Taiwan
Prior art keywords
electrode
layer
photoelectric conversion
imaging element
oxide semiconductor
Prior art date
Application number
TW109106399A
Other languages
English (en)
Chinese (zh)
Other versions
TW202105785A (zh
Inventor
森脇俊貴
Original Assignee
日商索尼股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商索尼股份有限公司 filed Critical 日商索尼股份有限公司
Publication of TW202105785A publication Critical patent/TW202105785A/zh
Application granted granted Critical
Publication of TWI856062B publication Critical patent/TWI856062B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/20—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising components having an active region that includes an inorganic semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
TW109106399A 2019-04-05 2020-02-27 攝像元件、積層型攝像元件及固體攝像裝置以及攝像元件之製造方法 TWI856062B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019072501 2019-04-05
JP2019-072501 2019-04-05

Publications (2)

Publication Number Publication Date
TW202105785A TW202105785A (zh) 2021-02-01
TWI856062B true TWI856062B (zh) 2024-09-21

Family

ID=72668786

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109106399A TWI856062B (zh) 2019-04-05 2020-02-27 攝像元件、積層型攝像元件及固體攝像裝置以及攝像元件之製造方法

Country Status (7)

Country Link
US (1) US12144192B2 (enExample)
EP (1) EP3951902A4 (enExample)
JP (1) JPWO2020202902A1 (enExample)
KR (1) KR102789312B1 (enExample)
CN (1) CN113544871B (enExample)
TW (1) TWI856062B (enExample)
WO (1) WO2020202902A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111448663B (zh) 2017-12-05 2024-04-16 索尼公司 摄像元件、层叠型摄像元件和固态摄像装置
EP3783654B1 (en) * 2018-04-20 2022-10-26 Sony Group Corporation Image-capture element, stacked image-capture element, and solid image-capture device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200903785A (en) * 2007-04-06 2009-01-16 Sony Corp Solid-state image pickup device and imaging apparatus
WO2015186354A1 (ja) * 2014-06-03 2015-12-10 株式会社Ｊｏｌｅｄ 薄膜トランジスタ及びその製造方法
TW201843823A (zh) * 2017-04-21 2018-12-16 日商索尼股份有限公司 攝像元件、積層型攝像元件及固體攝像裝置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008177191A (ja) 2007-01-16 2008-07-31 Matsushita Electric Ind Co Ltd 固体撮像装置およびそれを用いたカメラ
CN102549757A (zh) 2009-09-30 2012-07-04 佳能株式会社 薄膜晶体管
JP5509846B2 (ja) 2009-12-28 2014-06-04 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP4993018B2 (ja) 2010-12-07 2012-08-08 大日本印刷株式会社 有機薄膜太陽電池および有機薄膜太陽電池の製造方法
TWI581431B (zh) * 2012-01-26 2017-05-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
JPWO2014021177A1 (ja) * 2012-08-02 2016-07-21 ソニー株式会社 半導体素子、半導体素子の製造方法、固体撮像装置、および電子機器
SG10201700805WA (en) 2012-08-03 2017-02-27 Semiconductor Energy Lab Co Ltd Oxide semiconductor stacked film and semiconductor device
TWI607510B (zh) 2012-12-28 2017-12-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
KR102639256B1 (ko) * 2012-12-28 2024-02-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제작 방법
KR102133451B1 (ko) * 2013-02-22 2020-07-14 삼성전자주식회사 광전 소자 및 이미지 센서
JP6337561B2 (ja) 2014-03-27 2018-06-06 株式会社リコー ペロブスカイト型太陽電池
TWI672804B (zh) * 2014-05-23 2019-09-21 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
CN110265550B (zh) 2014-07-17 2023-10-24 索尼公司 光电转换元件及其制造方法、成像装置、光学传感器
JP2016063165A (ja) 2014-09-19 2016-04-25 株式会社東芝 撮像素子及び固体撮像装置
WO2017098369A1 (en) * 2015-12-11 2017-06-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, semiconductor device, and display device
JP6989391B2 (ja) 2016-02-02 2022-01-05 積水化学工業株式会社 太陽電池
JP2018157147A (ja) * 2017-03-21 2018-10-04 積水化学工業株式会社 固体接合型光電変換素子
EP3631868A1 (en) * 2017-06-02 2020-04-08 Nexdot Illumination source and display apparatus having the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200903785A (en) * 2007-04-06 2009-01-16 Sony Corp Solid-state image pickup device and imaging apparatus
WO2015186354A1 (ja) * 2014-06-03 2015-12-10 株式会社Ｊｏｌｅｄ 薄膜トランジスタ及びその製造方法
TW201843823A (zh) * 2017-04-21 2018-12-16 日商索尼股份有限公司 攝像元件、積層型攝像元件及固體攝像裝置

Also Published As

Publication number Publication date
WO2020202902A1 (ja) 2020-10-08
CN113544871A (zh) 2021-10-22
KR20210145742A (ko) 2021-12-02
US12144192B2 (en) 2024-11-12
US20220208857A1 (en) 2022-06-30
TW202105785A (zh) 2021-02-01
KR102789312B1 (ko) 2025-04-03
EP3951902A4 (en) 2022-10-19
JPWO2020202902A1 (enExample) 2020-10-08
EP3951902A1 (en) 2022-02-09
CN113544871B (zh) 2025-12-19

Similar Documents

Publication Publication Date Title
TWI868072B (zh) 攝像元件、積層型攝像元件及固態攝像裝置
JP7259849B2 (ja) 撮像素子、積層型撮像素子及び固体撮像装置
TWI820114B (zh) 攝像元件、積層型攝像元件及固體攝像裝置
TWI816802B (zh) 攝像裝置
KR102656300B1 (ko) 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치
TWI803616B (zh) 攝像元件、積層型攝像元件及固體攝像裝置
TWI856748B (zh) 攝像元件及固體攝像裝置
TWI835844B (zh) 攝像元件、積層型攝像元件及固體攝像裝置
KR20210004974A (ko) 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치
JP7673637B2 (ja) 撮像素子、積層型撮像素子及び固体撮像装置
TWI826526B (zh) 攝像元件、積層型攝像元件及固體攝像裝置
TWI856062B (zh) 攝像元件、積層型攝像元件及固體攝像裝置以及攝像元件之製造方法
JP7441785B2 (ja) 固体撮像装置
JP7337056B2 (ja) 固体撮像装置