CN113544871B - 摄像元件及其制造方法、层叠型摄像元件和固态摄像装置 - Google Patents

摄像元件及其制造方法、层叠型摄像元件和固态摄像装置

Info

Publication number
CN113544871B
CN113544871B CN202080019748.XA CN202080019748A CN113544871B CN 113544871 B CN113544871 B CN 113544871B CN 202080019748 A CN202080019748 A CN 202080019748A CN 113544871 B CN113544871 B CN 113544871B
Authority
CN
China
Prior art keywords
electrode
image pickup
layer
pickup element
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080019748.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN113544871A (zh
Inventor
森胁俊贵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Group Corp
Original Assignee
Sony Group Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Group Corp filed Critical Sony Group Corp
Publication of CN113544871A publication Critical patent/CN113544871A/zh
Application granted granted Critical
Publication of CN113544871B publication Critical patent/CN113544871B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/20—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising components having an active region that includes an inorganic semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
CN202080019748.XA 2019-04-05 2020-02-25 摄像元件及其制造方法、层叠型摄像元件和固态摄像装置 Active CN113544871B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019072501 2019-04-05
JP2019-072501 2019-04-05
PCT/JP2020/007385 WO2020202902A1 (ja) 2019-04-05 2020-02-25 撮像素子、積層型撮像素子及び固体撮像装置、並びに、撮像素子の製造方法

Publications (2)

Publication Number Publication Date
CN113544871A CN113544871A (zh) 2021-10-22
CN113544871B true CN113544871B (zh) 2025-12-19

Family

ID=72668786

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080019748.XA Active CN113544871B (zh) 2019-04-05 2020-02-25 摄像元件及其制造方法、层叠型摄像元件和固态摄像装置

Country Status (7)

Country Link
US (1) US12144192B2 (enExample)
EP (1) EP3951902A4 (enExample)
JP (1) JPWO2020202902A1 (enExample)
KR (1) KR102789312B1 (enExample)
CN (1) CN113544871B (enExample)
TW (1) TWI856062B (enExample)
WO (1) WO2020202902A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019111603A1 (ja) 2017-12-05 2019-06-13 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置
US11705530B2 (en) * 2018-04-20 2023-07-18 Sony Corporation Imaging device, stacked imaging device, and solid-state imaging apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015186354A1 (ja) * 2014-06-03 2015-12-10 株式会社Ｊｏｌｅｄ 薄膜トランジスタ及びその製造方法
WO2018194051A1 (ja) * 2017-04-21 2018-10-25 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008177191A (ja) 2007-01-16 2008-07-31 Matsushita Electric Ind Co Ltd 固体撮像装置およびそれを用いたカメラ
JP2008258474A (ja) 2007-04-06 2008-10-23 Sony Corp 固体撮像装置および撮像装置
WO2011039853A1 (ja) 2009-09-30 2011-04-07 キヤノン株式会社 薄膜トランジスタ
JP5509846B2 (ja) 2009-12-28 2014-06-04 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP4993018B2 (ja) * 2010-12-07 2012-08-08 大日本印刷株式会社 有機薄膜太陽電池および有機薄膜太陽電池の製造方法
TWI642193B (zh) * 2012-01-26 2018-11-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
WO2014021177A1 (ja) * 2012-08-02 2014-02-06 ソニー株式会社 半導体素子、半導体素子の製造方法、固体撮像装置、および電子機器
SG10201700805WA (en) 2012-08-03 2017-02-27 Semiconductor Energy Lab Co Ltd Oxide semiconductor stacked film and semiconductor device
CN104904018B (zh) * 2012-12-28 2019-04-09 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
TWI607510B (zh) * 2012-12-28 2017-12-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
KR102133451B1 (ko) * 2013-02-22 2020-07-14 삼성전자주식회사 광전 소자 및 이미지 센서
JP6337561B2 (ja) * 2014-03-27 2018-06-06 株式会社リコー ペロブスカイト型太陽電池
TWI672804B (zh) * 2014-05-23 2019-09-21 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
CN110265550B (zh) * 2014-07-17 2023-10-24 索尼公司 光电转换元件及其制造方法、成像装置、光学传感器
JP2016063165A (ja) 2014-09-19 2016-04-25 株式会社東芝 撮像素子及び固体撮像装置
WO2017098369A1 (en) * 2015-12-11 2017-06-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, semiconductor device, and display device
AU2017215725A1 (en) * 2016-02-02 2018-05-10 Sekisui Chemical Co., Ltd. Solar cell
JP2018157147A (ja) * 2017-03-21 2018-10-04 積水化学工業株式会社 固体接合型光電変換素子
CN110945670B (zh) * 2017-06-02 2024-05-10 奈科斯多特股份公司 照明源及具有该照明源之显示设备

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015186354A1 (ja) * 2014-06-03 2015-12-10 株式会社Ｊｏｌｅｄ 薄膜トランジスタ及びその製造方法
WO2018194051A1 (ja) * 2017-04-21 2018-10-25 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置

Also Published As

Publication number Publication date
KR102789312B1 (ko) 2025-04-03
TW202105785A (zh) 2021-02-01
EP3951902A4 (en) 2022-10-19
TWI856062B (zh) 2024-09-21
CN113544871A (zh) 2021-10-22
US20220208857A1 (en) 2022-06-30
JPWO2020202902A1 (enExample) 2020-10-08
KR20210145742A (ko) 2021-12-02
US12144192B2 (en) 2024-11-12
WO2020202902A1 (ja) 2020-10-08
EP3951902A1 (en) 2022-02-09

Similar Documents

Publication Publication Date Title
CN112385044B (zh) 摄像元件、层叠型摄像元件和固态摄像装置
CN111971796B (zh) 摄像器件、堆叠式摄像器件和固态摄像装置
CN111971797B (zh) 摄像器件、层叠型摄像器件和固态摄像装置
CN112136214B (zh) 摄像装置
KR102656300B1 (ko) 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치
US12238948B2 (en) Imaging element, stacked imaging element, and solid-state imaging device
CN111971799A (zh) 摄像元件、层叠型摄像元件和固态摄像装置
CN113924648B (zh) 摄像元件、层叠式摄像元件和固态摄像装置
CN111971798A (zh) 摄像元件、层叠式摄像元件和固态摄像装置
TWI826526B (zh) 攝像元件、積層型攝像元件及固體攝像裝置
CN113728450A (zh) 摄像元件、层叠式摄像元件和固态摄像装置以及无机氧化物半导体材料
CN113544871B (zh) 摄像元件及其制造方法、层叠型摄像元件和固态摄像装置
CN114930537A (zh) 成像元件、层叠型成像元件、固态成像装置和无机氧化物半导体材料
CN113728451B (zh) 摄像元件、层叠式摄像元件和固态摄像装置以及摄像元件的制造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant