JPWO2020202902A1 - - Google Patents

Info

Publication number
JPWO2020202902A1
JPWO2020202902A1 JP2021511220A JP2021511220A JPWO2020202902A1 JP WO2020202902 A1 JPWO2020202902 A1 JP WO2020202902A1 JP 2021511220 A JP2021511220 A JP 2021511220A JP 2021511220 A JP2021511220 A JP 2021511220A JP WO2020202902 A1 JPWO2020202902 A1 JP WO2020202902A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021511220A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2020202902A1 publication Critical patent/JPWO2020202902A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/20—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising components having an active region that includes an inorganic semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2021511220A 2019-04-05 2020-02-25 Pending JPWO2020202902A1 (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019072501 2019-04-05
PCT/JP2020/007385 WO2020202902A1 (ja) 2019-04-05 2020-02-25 撮像素子、積層型撮像素子及び固体撮像装置、並びに、撮像素子の製造方法

Publications (1)

Publication Number Publication Date
JPWO2020202902A1 true JPWO2020202902A1 (enExample) 2020-10-08

Family

ID=72668786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021511220A Pending JPWO2020202902A1 (enExample) 2019-04-05 2020-02-25

Country Status (7)

Country Link
US (1) US12144192B2 (enExample)
EP (1) EP3951902A4 (enExample)
JP (1) JPWO2020202902A1 (enExample)
KR (1) KR102789312B1 (enExample)
CN (1) CN113544871B (enExample)
TW (1) TWI856062B (enExample)
WO (1) WO2020202902A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3723132B1 (en) 2017-12-05 2022-08-24 Sony Group Corporation Imaging element, laminate-type imaging element, and solid-state imaging device
CN111971796B (zh) * 2018-04-20 2024-07-19 索尼公司 摄像器件、堆叠式摄像器件和固态摄像装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011039853A1 (ja) * 2009-09-30 2011-04-07 キヤノン株式会社 薄膜トランジスタ
JP2014199416A (ja) * 2012-12-28 2014-10-23 株式会社半導体エネルギー研究所 金属酸化物膜、半導体装置
WO2015186354A1 (ja) * 2014-06-03 2015-12-10 株式会社Ｊｏｌｅｄ 薄膜トランジスタ及びその製造方法
WO2018194051A1 (ja) * 2017-04-21 2018-10-25 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008177191A (ja) 2007-01-16 2008-07-31 Matsushita Electric Ind Co Ltd 固体撮像装置およびそれを用いたカメラ
JP2008258474A (ja) 2007-04-06 2008-10-23 Sony Corp 固体撮像装置および撮像装置
JP5509846B2 (ja) 2009-12-28 2014-06-04 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP4993018B2 (ja) * 2010-12-07 2012-08-08 大日本印刷株式会社 有機薄膜太陽電池および有機薄膜太陽電池の製造方法
TWI605597B (zh) * 2012-01-26 2017-11-11 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
WO2014021177A1 (ja) * 2012-08-02 2014-02-06 ソニー株式会社 半導体素子、半導体素子の製造方法、固体撮像装置、および電子機器
SG11201505225TA (en) 2012-08-03 2015-08-28 Semiconductor Energy Lab Oxide semiconductor stacked film and semiconductor device
CN110137181A (zh) * 2012-12-28 2019-08-16 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
KR102133451B1 (ko) * 2013-02-22 2020-07-14 삼성전자주식회사 광전 소자 및 이미지 센서
JP6337561B2 (ja) * 2014-03-27 2018-06-06 株式会社リコー ペロブスカイト型太陽電池
TWI672804B (zh) * 2014-05-23 2019-09-21 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
WO2016009693A1 (ja) * 2014-07-17 2016-01-21 ソニー株式会社 光電変換素子、撮像装置、光センサ及び光電変換素子の製造方法
JP2016063165A (ja) 2014-09-19 2016-04-25 株式会社東芝 撮像素子及び固体撮像装置
WO2017098369A1 (en) * 2015-12-11 2017-06-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, semiconductor device, and display device
WO2017135293A1 (ja) * 2016-02-02 2017-08-10 積水化学工業株式会社 太陽電池
JP2018157147A (ja) * 2017-03-21 2018-10-04 積水化学工業株式会社 固体接合型光電変換素子
WO2018220162A1 (en) * 2017-06-02 2018-12-06 Nexdot Illumination source and display apparatus having the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011039853A1 (ja) * 2009-09-30 2011-04-07 キヤノン株式会社 薄膜トランジスタ
JP2014199416A (ja) * 2012-12-28 2014-10-23 株式会社半導体エネルギー研究所 金属酸化物膜、半導体装置
WO2015186354A1 (ja) * 2014-06-03 2015-12-10 株式会社Ｊｏｌｅｄ 薄膜トランジスタ及びその製造方法
WO2018194051A1 (ja) * 2017-04-21 2018-10-25 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置

Also Published As

Publication number Publication date
KR20210145742A (ko) 2021-12-02
EP3951902A1 (en) 2022-02-09
US12144192B2 (en) 2024-11-12
EP3951902A4 (en) 2022-10-19
US20220208857A1 (en) 2022-06-30
CN113544871A (zh) 2021-10-22
CN113544871B (zh) 2025-12-19
WO2020202902A1 (ja) 2020-10-08
TW202105785A (zh) 2021-02-01
KR102789312B1 (ko) 2025-04-03
TWI856062B (zh) 2024-09-21

Similar Documents

Publication Publication Date Title
BR112019017762A2 (enExample)
BR112021017339A2 (enExample)
BR112021018450A2 (enExample)
BR112021017637A2 (enExample)
BR112021017738A2 (enExample)
BR112019016141A2 (enExample)
BR112021018452A2 (enExample)
BR112021017703A2 (enExample)
BR112021017728A2 (enExample)
AU2020104490A5 (enExample)
BR112021013944A2 (enExample)
BR112019016138A2 (enExample)
BR112019016142A2 (enExample)
BR112021017234A2 (enExample)
BR112021017732A2 (enExample)
BR112021015080A2 (enExample)
BR112021012348A2 (enExample)
BR112021018250A2 (enExample)
BR112021017355A2 (enExample)
BR112021017173A2 (enExample)
BR112021018584A2 (enExample)
BR112021017310A2 (enExample)
BR112021018484A2 (enExample)
JPWO2020202902A1 (enExample)
AT524962A5 (enExample)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230217

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240423

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240617

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20241001