KR102789312B1 - 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치, 및, 촬상 소자의 제조 방법 - Google Patents

촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치, 및, 촬상 소자의 제조 방법 Download PDF

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KR102789312B1
KR102789312B1 KR1020217030297A KR20217030297A KR102789312B1 KR 102789312 B1 KR102789312 B1 KR 102789312B1 KR 1020217030297 A KR1020217030297 A KR 1020217030297A KR 20217030297 A KR20217030297 A KR 20217030297A KR 102789312 B1 KR102789312 B1 KR 102789312B1
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imaging element
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KR20210145742A (ko
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토시키 모리와키
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소니그룹주식회사
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/20—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising components having an active region that includes an inorganic semiconductor
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    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
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    • H10K39/32—Organic image sensors
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
KR1020217030297A 2019-04-05 2020-02-25 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치, 및, 촬상 소자의 제조 방법 Active KR102789312B1 (ko)

Applications Claiming Priority (3)

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JPJP-P-2019-072501 2019-04-05
JP2019072501 2019-04-05
PCT/JP2020/007385 WO2020202902A1 (ja) 2019-04-05 2020-02-25 撮像素子、積層型撮像素子及び固体撮像装置、並びに、撮像素子の製造方法

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KR20210145742A KR20210145742A (ko) 2021-12-02
KR102789312B1 true KR102789312B1 (ko) 2025-04-03

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US (1) US12144192B2 (enExample)
EP (1) EP3951902A4 (enExample)
JP (1) JPWO2020202902A1 (enExample)
KR (1) KR102789312B1 (enExample)
CN (1) CN113544871B (enExample)
TW (1) TWI856062B (enExample)
WO (1) WO2020202902A1 (enExample)

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WO2019111603A1 (ja) 2017-12-05 2019-06-13 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置
US11705530B2 (en) * 2018-04-20 2023-07-18 Sony Corporation Imaging device, stacked imaging device, and solid-state imaging apparatus

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WO2015186354A1 (ja) * 2014-06-03 2015-12-10 株式会社Ｊｏｌｅｄ 薄膜トランジスタ及びその製造方法
WO2018194051A1 (ja) * 2017-04-21 2018-10-25 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置

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JP2008258474A (ja) 2007-04-06 2008-10-23 Sony Corp 固体撮像装置および撮像装置
WO2011039853A1 (ja) 2009-09-30 2011-04-07 キヤノン株式会社 薄膜トランジスタ
JP5509846B2 (ja) 2009-12-28 2014-06-04 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP4993018B2 (ja) * 2010-12-07 2012-08-08 大日本印刷株式会社 有機薄膜太陽電池および有機薄膜太陽電池の製造方法
TWI642193B (zh) * 2012-01-26 2018-11-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
SG10201700805WA (en) 2012-08-03 2017-02-27 Semiconductor Energy Lab Co Ltd Oxide semiconductor stacked film and semiconductor device
CN104904018B (zh) * 2012-12-28 2019-04-09 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
TWI607510B (zh) * 2012-12-28 2017-12-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
KR102133451B1 (ko) * 2013-02-22 2020-07-14 삼성전자주식회사 광전 소자 및 이미지 센서
JP6337561B2 (ja) * 2014-03-27 2018-06-06 株式会社リコー ペロブスカイト型太陽電池
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TW202105785A (zh) 2021-02-01
EP3951902A4 (en) 2022-10-19
TWI856062B (zh) 2024-09-21
CN113544871A (zh) 2021-10-22
US20220208857A1 (en) 2022-06-30
JPWO2020202902A1 (enExample) 2020-10-08
KR20210145742A (ko) 2021-12-02
US12144192B2 (en) 2024-11-12
CN113544871B (zh) 2025-12-19
WO2020202902A1 (ja) 2020-10-08
EP3951902A1 (en) 2022-02-09

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