TWI843664B - 用於化學機械研磨的紋理化的小墊 - Google Patents
用於化學機械研磨的紋理化的小墊 Download PDFInfo
- Publication number
- TWI843664B TWI843664B TW112139156A TW112139156A TWI843664B TW I843664 B TWI843664 B TW I843664B TW 112139156 A TW112139156 A TW 112139156A TW 112139156 A TW112139156 A TW 112139156A TW I843664 B TWI843664 B TW I843664B
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing pad
- polishing
- pad portion
- substrate
- recesses
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 354
- 239000000126 substance Substances 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 145
- 238000005192 partition Methods 0.000 claims description 11
- 239000012528 membrane Substances 0.000 abstract description 34
- 239000010408 film Substances 0.000 description 40
- 239000010410 layer Substances 0.000 description 26
- 238000000227 grinding Methods 0.000 description 17
- 239000002002 slurry Substances 0.000 description 16
- 239000012530 fluid Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920002635 polyurethane Polymers 0.000 description 3
- 239000004814 polyurethane Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000010146 3D printing Methods 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 235000012773 waffles Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662313023P | 2016-03-24 | 2016-03-24 | |
| US62/313,023 | 2016-03-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202406679A TW202406679A (zh) | 2024-02-16 |
| TWI843664B true TWI843664B (zh) | 2024-05-21 |
Family
ID=59897480
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW112139156A TWI843664B (zh) | 2016-03-24 | 2017-03-24 | 用於化學機械研磨的紋理化的小墊 |
| TW106109841A TWI757275B (zh) | 2016-03-24 | 2017-03-24 | 用於化學機械研磨的紋理化的小墊 |
| TW112105107A TWI846323B (zh) | 2016-03-24 | 2017-03-24 | 用於化學機械研磨的紋理化的小墊 |
| TW111104600A TWI836343B (zh) | 2016-03-24 | 2017-03-24 | 用於化學機械研磨的紋理化的小墊 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106109841A TWI757275B (zh) | 2016-03-24 | 2017-03-24 | 用於化學機械研磨的紋理化的小墊 |
| TW112105107A TWI846323B (zh) | 2016-03-24 | 2017-03-24 | 用於化學機械研磨的紋理化的小墊 |
| TW111104600A TWI836343B (zh) | 2016-03-24 | 2017-03-24 | 用於化學機械研磨的紋理化的小墊 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10589399B2 (enExample) |
| JP (3) | JP6979030B2 (enExample) |
| KR (2) | KR102535628B1 (enExample) |
| CN (1) | CN108883515A (enExample) |
| TW (4) | TWI843664B (enExample) |
| WO (1) | WO2017165216A1 (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
| US9776361B2 (en) | 2014-10-17 | 2017-10-03 | Applied Materials, Inc. | Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles |
| CN107078048B (zh) | 2014-10-17 | 2021-08-13 | 应用材料公司 | 使用加成制造工艺的具复合材料特性的cmp衬垫建构 |
| US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
| US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
| KR20230169424A (ko) | 2015-10-30 | 2023-12-15 | 어플라이드 머티어리얼스, 인코포레이티드 | 원하는 제타 전위를 가진 연마 제품을 형성하는 장치 및 방법 |
| US10593574B2 (en) | 2015-11-06 | 2020-03-17 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
| US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
| KR102535628B1 (ko) * | 2016-03-24 | 2023-05-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 화학적 기계적 연마를 위한 조직화된 소형 패드 |
| US20180019169A1 (en) * | 2016-07-12 | 2018-01-18 | QMAT, Inc. | Backing substrate stabilizing donor substrate for implant or reclamation |
| JP6884015B2 (ja) * | 2017-03-22 | 2021-06-09 | 株式会社荏原製作所 | 基板の研磨装置および研磨方法 |
| US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
| US11072050B2 (en) | 2017-08-04 | 2021-07-27 | Applied Materials, Inc. | Polishing pad with window and manufacturing methods thereof |
| WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
| US10654147B2 (en) * | 2017-10-17 | 2020-05-19 | Applied Materials, Inc. | Polishing of electrostatic substrate support geometries |
| US11685013B2 (en) * | 2018-01-24 | 2023-06-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing pad for chemical mechanical planarization |
| JP7373503B2 (ja) | 2018-05-07 | 2023-11-02 | アプライド マテリアルズ インコーポレイテッド | 親水性及びゼータ電位の調節可能な化学機械研磨パッド |
| CN112654655A (zh) | 2018-09-04 | 2021-04-13 | 应用材料公司 | 先进抛光垫配方 |
| TWI837213B (zh) * | 2018-11-21 | 2024-04-01 | 美商應用材料股份有限公司 | 拋光系統、載具頭組件及拋光基板的方法 |
| US11331767B2 (en) * | 2019-02-01 | 2022-05-17 | Micron Technology, Inc. | Pads for chemical mechanical planarization tools, chemical mechanical planarization tools, and related methods |
| TWI850338B (zh) * | 2019-02-28 | 2024-08-01 | 美商應用材料股份有限公司 | 拋光墊、化學機械拋光系統、及控制拋光墊的背襯層的剛度的方法 |
| JP7351170B2 (ja) * | 2019-09-26 | 2023-09-27 | 日本電気硝子株式会社 | 研磨パッド、及び研磨方法 |
| JP7469735B2 (ja) * | 2020-02-27 | 2024-04-17 | 日本電気硝子株式会社 | 研磨パッド、及び研磨方法 |
| US20210299816A1 (en) * | 2020-03-25 | 2021-09-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cmp polishing pad with protruding structures having engineered open void space |
| US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
| WO2022186992A1 (en) * | 2021-03-03 | 2022-09-09 | Applied Materials, Inc. | Acoustic monitoring and sensors for chemical mechanical polishing |
| US20230024009A1 (en) * | 2021-07-20 | 2023-01-26 | Applied Materials, Inc. | Face-up wafer edge polishing apparatus |
| KR20230106863A (ko) * | 2022-01-07 | 2023-07-14 | 삼성전자주식회사 | 연마 패드, 그를 포함하는 화학적 기계적 연마 장치, 및 그를 이용하는 반도체 소자의 제조 방법 |
| WO2024008338A1 (en) * | 2022-07-08 | 2024-01-11 | Struers ApS | A grinding and/or polishing machine and a specimen holder |
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| US10207389B2 (en) | 2014-07-17 | 2019-02-19 | Applied Materials, Inc. | Polishing pad configuration and chemical mechanical polishing system |
| US10105812B2 (en) | 2014-07-17 | 2018-10-23 | Applied Materials, Inc. | Polishing pad configuration and polishing pad support |
| US10076817B2 (en) * | 2014-07-17 | 2018-09-18 | Applied Materials, Inc. | Orbital polishing with small pad |
| US9873179B2 (en) * | 2016-01-20 | 2018-01-23 | Applied Materials, Inc. | Carrier for small pad for chemical mechanical polishing |
| KR102535628B1 (ko) * | 2016-03-24 | 2023-05-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 화학적 기계적 연마를 위한 조직화된 소형 패드 |
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2017
- 2017-03-17 KR KR1020227004767A patent/KR102535628B1/ko active Active
- 2017-03-17 KR KR1020187030591A patent/KR102363829B1/ko active Active
- 2017-03-17 US US15/461,944 patent/US10589399B2/en active Active
- 2017-03-17 WO PCT/US2017/022924 patent/WO2017165216A1/en not_active Ceased
- 2017-03-17 CN CN201780019865.4A patent/CN108883515A/zh active Pending
- 2017-03-17 JP JP2018549965A patent/JP6979030B2/ja active Active
- 2017-03-24 TW TW112139156A patent/TWI843664B/zh active
- 2017-03-24 TW TW106109841A patent/TWI757275B/zh active
- 2017-03-24 TW TW112105107A patent/TWI846323B/zh active
- 2017-03-24 TW TW111104600A patent/TWI836343B/zh active
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2021
- 2021-11-12 JP JP2021184805A patent/JP7326405B2/ja active Active
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2023
- 2023-08-02 JP JP2023126338A patent/JP7580543B2/ja active Active
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| US8858298B2 (en) * | 2002-07-24 | 2014-10-14 | Applied Materials, Inc. | Polishing pad with two-section window having recess |
| JP2005294412A (ja) * | 2004-03-31 | 2005-10-20 | Toyo Tire & Rubber Co Ltd | 研磨パッド |
| TWM294991U (en) * | 2004-10-12 | 2006-08-01 | Applied Materials Inc | Polishing pad conditioner with shaped abrasive patterns and channels |
| TW201609313A (zh) * | 2014-07-17 | 2016-03-16 | 應用材料股份有限公司 | 化學機械硏磨所用的方法、系統與硏磨墊 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6979030B2 (ja) | 2021-12-08 |
| KR20180119693A (ko) | 2018-11-02 |
| KR102363829B1 (ko) | 2022-02-16 |
| WO2017165216A1 (en) | 2017-09-28 |
| TWI846323B (zh) | 2024-06-21 |
| US10589399B2 (en) | 2020-03-17 |
| TW202406679A (zh) | 2024-02-16 |
| TW202220797A (zh) | 2022-06-01 |
| TW202322971A (zh) | 2023-06-16 |
| JP2022031724A (ja) | 2022-02-22 |
| KR102535628B1 (ko) | 2023-05-30 |
| US20170274498A1 (en) | 2017-09-28 |
| KR20220025234A (ko) | 2022-03-03 |
| JP7580543B2 (ja) | 2024-11-11 |
| TWI757275B (zh) | 2022-03-11 |
| CN108883515A (zh) | 2018-11-23 |
| TW201736041A (zh) | 2017-10-16 |
| JP7326405B2 (ja) | 2023-08-15 |
| JP2019510650A (ja) | 2019-04-18 |
| TWI836343B (zh) | 2024-03-21 |
| JP2023162199A (ja) | 2023-11-08 |
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