TWI843664B - 用於化學機械研磨的紋理化的小墊 - Google Patents

用於化學機械研磨的紋理化的小墊 Download PDF

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Publication number
TWI843664B
TWI843664B TW112139156A TW112139156A TWI843664B TW I843664 B TWI843664 B TW I843664B TW 112139156 A TW112139156 A TW 112139156A TW 112139156 A TW112139156 A TW 112139156A TW I843664 B TWI843664 B TW I843664B
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TW
Taiwan
Prior art keywords
polishing pad
polishing
pad portion
substrate
recesses
Prior art date
Application number
TW112139156A
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English (en)
Chinese (zh)
Other versions
TW202406679A (zh
Inventor
正勳 吳
愛德恩C 隋瑞茲
家祥 馮
永豪 劉
敬儀 向
亞敘溫穆魯嘉龐 裘卡林姆
丹尼爾 瑞特法德
查爾斯C 蓋瑞森
湯瑪士H 歐斯特海德
Original Assignee
美商應用材料股份有限公司
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Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW202406679A publication Critical patent/TW202406679A/zh
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Publication of TWI843664B publication Critical patent/TWI843664B/zh

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/26Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/34Accessories
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
TW112139156A 2016-03-24 2017-03-24 用於化學機械研磨的紋理化的小墊 TWI843664B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662313023P 2016-03-24 2016-03-24
US62/313,023 2016-03-24

Publications (2)

Publication Number Publication Date
TW202406679A TW202406679A (zh) 2024-02-16
TWI843664B true TWI843664B (zh) 2024-05-21

Family

ID=59897480

Family Applications (4)

Application Number Title Priority Date Filing Date
TW112139156A TWI843664B (zh) 2016-03-24 2017-03-24 用於化學機械研磨的紋理化的小墊
TW106109841A TWI757275B (zh) 2016-03-24 2017-03-24 用於化學機械研磨的紋理化的小墊
TW112105107A TWI846323B (zh) 2016-03-24 2017-03-24 用於化學機械研磨的紋理化的小墊
TW111104600A TWI836343B (zh) 2016-03-24 2017-03-24 用於化學機械研磨的紋理化的小墊

Family Applications After (3)

Application Number Title Priority Date Filing Date
TW106109841A TWI757275B (zh) 2016-03-24 2017-03-24 用於化學機械研磨的紋理化的小墊
TW112105107A TWI846323B (zh) 2016-03-24 2017-03-24 用於化學機械研磨的紋理化的小墊
TW111104600A TWI836343B (zh) 2016-03-24 2017-03-24 用於化學機械研磨的紋理化的小墊

Country Status (6)

Country Link
US (1) US10589399B2 (enExample)
JP (3) JP6979030B2 (enExample)
KR (2) KR102535628B1 (enExample)
CN (1) CN108883515A (enExample)
TW (4) TWI843664B (enExample)
WO (1) WO2017165216A1 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
CN107078048B (zh) 2014-10-17 2021-08-13 应用材料公司 使用加成制造工艺的具复合材料特性的cmp衬垫建构
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
KR20230169424A (ko) 2015-10-30 2023-12-15 어플라이드 머티어리얼스, 인코포레이티드 원하는 제타 전위를 가진 연마 제품을 형성하는 장치 및 방법
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
KR102535628B1 (ko) * 2016-03-24 2023-05-30 어플라이드 머티어리얼스, 인코포레이티드 화학적 기계적 연마를 위한 조직화된 소형 패드
US20180019169A1 (en) * 2016-07-12 2018-01-18 QMAT, Inc. Backing substrate stabilizing donor substrate for implant or reclamation
JP6884015B2 (ja) * 2017-03-22 2021-06-09 株式会社荏原製作所 基板の研磨装置および研磨方法
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US11072050B2 (en) 2017-08-04 2021-07-27 Applied Materials, Inc. Polishing pad with window and manufacturing methods thereof
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
US10654147B2 (en) * 2017-10-17 2020-05-19 Applied Materials, Inc. Polishing of electrostatic substrate support geometries
US11685013B2 (en) * 2018-01-24 2023-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing pad for chemical mechanical planarization
JP7373503B2 (ja) 2018-05-07 2023-11-02 アプライド マテリアルズ インコーポレイテッド 親水性及びゼータ電位の調節可能な化学機械研磨パッド
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
TWI837213B (zh) * 2018-11-21 2024-04-01 美商應用材料股份有限公司 拋光系統、載具頭組件及拋光基板的方法
US11331767B2 (en) * 2019-02-01 2022-05-17 Micron Technology, Inc. Pads for chemical mechanical planarization tools, chemical mechanical planarization tools, and related methods
TWI850338B (zh) * 2019-02-28 2024-08-01 美商應用材料股份有限公司 拋光墊、化學機械拋光系統、及控制拋光墊的背襯層的剛度的方法
JP7351170B2 (ja) * 2019-09-26 2023-09-27 日本電気硝子株式会社 研磨パッド、及び研磨方法
JP7469735B2 (ja) * 2020-02-27 2024-04-17 日本電気硝子株式会社 研磨パッド、及び研磨方法
US20210299816A1 (en) * 2020-03-25 2021-09-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cmp polishing pad with protruding structures having engineered open void space
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
WO2022186992A1 (en) * 2021-03-03 2022-09-09 Applied Materials, Inc. Acoustic monitoring and sensors for chemical mechanical polishing
US20230024009A1 (en) * 2021-07-20 2023-01-26 Applied Materials, Inc. Face-up wafer edge polishing apparatus
KR20230106863A (ko) * 2022-01-07 2023-07-14 삼성전자주식회사 연마 패드, 그를 포함하는 화학적 기계적 연마 장치, 및 그를 이용하는 반도체 소자의 제조 방법
WO2024008338A1 (en) * 2022-07-08 2024-01-11 Struers ApS A grinding and/or polishing machine and a specimen holder

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005294412A (ja) * 2004-03-31 2005-10-20 Toyo Tire & Rubber Co Ltd 研磨パッド
TWM294991U (en) * 2004-10-12 2006-08-01 Applied Materials Inc Polishing pad conditioner with shaped abrasive patterns and channels
US8858298B2 (en) * 2002-07-24 2014-10-14 Applied Materials, Inc. Polishing pad with two-section window having recess
TW201609313A (zh) * 2014-07-17 2016-03-16 應用材料股份有限公司 化學機械硏磨所用的方法、系統與硏磨墊

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61187657U (enExample) * 1985-05-17 1986-11-22
US5020283A (en) 1990-01-22 1991-06-04 Micron Technology, Inc. Polishing pad with uniform abrasion
US5177908A (en) 1990-01-22 1993-01-12 Micron Technology, Inc. Polishing pad
US5310455A (en) * 1992-07-10 1994-05-10 Lsi Logic Corporation Techniques for assembling polishing pads for chemi-mechanical polishing of silicon wafers
MY114512A (en) 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US5384986A (en) 1992-09-24 1995-01-31 Ebara Corporation Polishing apparatus
US5938504A (en) 1993-11-16 1999-08-17 Applied Materials, Inc. Substrate polishing apparatus
US5558563A (en) 1995-02-23 1996-09-24 International Business Machines Corporation Method and apparatus for uniform polishing of a substrate
US5897424A (en) 1995-07-10 1999-04-27 The United States Of America As Represented By The Secretary Of Commerce Renewable polishing lap
JP3329644B2 (ja) 1995-07-21 2002-09-30 株式会社東芝 研磨パッド、研磨装置及び研磨方法
US5785584A (en) 1996-08-30 1998-07-28 International Business Machines Corporation Planarizing apparatus with deflectable polishing pad
JP3705670B2 (ja) 1997-02-19 2005-10-12 株式会社荏原製作所 ポリッシング装置及び方法
JPH10235552A (ja) 1997-02-24 1998-09-08 Ebara Corp ポリッシング装置
JPH10329012A (ja) 1997-03-21 1998-12-15 Canon Inc 研磨装置および研磨方法
US5921855A (en) 1997-05-15 1999-07-13 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing system
US6273806B1 (en) 1997-05-15 2001-08-14 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus
KR100443330B1 (ko) 1998-07-31 2004-08-09 쎄미콘테크 주식회사 화학 기계적 연마 방법 및 장치
JP3920465B2 (ja) * 1998-08-04 2007-05-30 信越半導体株式会社 研磨方法および研磨装置
US6331137B1 (en) * 1998-08-28 2001-12-18 Advanced Micro Devices, Inc Polishing pad having open area which varies with distance from initial pad surface
JP2000158327A (ja) 1998-12-02 2000-06-13 Rohm Co Ltd 化学的機械的研磨用研磨布およびそれを用いた化学的機械的研磨装置
JP2000354952A (ja) * 1999-04-05 2000-12-26 Nikon Corp 研磨部材、研磨方法、研磨装置、半導体デバイス製造方法、及び半導体デバイス
US6217426B1 (en) * 1999-04-06 2001-04-17 Applied Materials, Inc. CMP polishing pad
US6517419B1 (en) 1999-10-27 2003-02-11 Strasbaugh Shaping polishing pad for small head chemical mechanical planarization
US6464574B1 (en) 1999-10-28 2002-10-15 Strasbaugh Pad quick release device for chemical mechanical planarization
US20020037649A1 (en) 1999-12-15 2002-03-28 Matsushita Electric Industrial Co., Ltd. Method for carrying out planarization processing
US20030168169A1 (en) 2000-08-03 2003-09-11 Akira Ishikawa Chemical-mechanical polishing apparatus, polishing pad and method for manufacturing semiconductor device
JP2002100592A (ja) * 2000-09-20 2002-04-05 Rodel Nitta Co 研磨パッド
JP3663348B2 (ja) 2000-09-26 2005-06-22 Towa株式会社 研磨装置及び研磨方法
US6514123B1 (en) 2000-11-21 2003-02-04 Agere Systems Inc. Semiconductor polishing pad alignment device for a polishing apparatus and method of use
US6561881B2 (en) 2001-03-15 2003-05-13 Oriol Inc. System and method for chemical mechanical polishing using multiple small polishing pads
US6752703B2 (en) * 2001-12-21 2004-06-22 Lam Research Corporation Chemical mechanical polishing apparatus and methods with porous vacuum chuck and perforated carrier film
JP3955066B2 (ja) * 2002-04-03 2007-08-08 東邦エンジニアリング株式会社 研磨パッドと該研磨パッドの製造方法および該研磨パッドを用いた半導体基板の製造方法
KR100669301B1 (ko) * 2002-06-03 2007-01-16 제이에스알 가부시끼가이샤 연마 패드 및 복층형 연마 패드
JP2004023009A (ja) * 2002-06-20 2004-01-22 Nikon Corp 研磨体、研磨装置、半導体デバイス及び半導体デバイス製造方法
WO2004024394A1 (en) * 2002-09-16 2004-03-25 Applied Materials, Inc. Control of removal profile in electrochemically assisted cmp
KR101252751B1 (ko) 2003-11-13 2013-04-09 어플라이드 머티어리얼스, 인코포레이티드 성형 표면을 갖는 유지 링
KR101279819B1 (ko) * 2005-04-12 2013-06-28 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 방사-편향 연마 패드
US7267610B1 (en) 2006-08-30 2007-09-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. CMP pad having unevenly spaced grooves
US7575504B2 (en) * 2006-11-22 2009-08-18 Applied Materials, Inc. Retaining ring, flexible membrane for applying load to a retaining ring, and retaining ring assembly
JP2008290197A (ja) 2007-05-25 2008-12-04 Nihon Micro Coating Co Ltd 研磨パッド及び方法
US8257142B2 (en) * 2008-04-15 2012-09-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
WO2009032768A2 (en) * 2007-09-03 2009-03-12 Semiquest, Inc. Polishing pad
CN102131618A (zh) * 2008-06-26 2011-07-20 3M创新有限公司 具有多孔单元的抛光垫以及制造和使用该抛光垫的方法
CN101623854A (zh) * 2008-07-10 2010-01-13 贝达先进材料股份有限公司 具有防止研磨面脱落的沟槽结构的研磨垫
TWM352126U (en) * 2008-10-23 2009-03-01 Bestac Advanced Material Co Ltd Polishing pad
JP5433384B2 (ja) * 2009-11-20 2014-03-05 富士紡ホールディングス株式会社 研磨シートおよび研磨シートの製造方法
CN102528643A (zh) 2010-12-30 2012-07-04 中芯国际集成电路制造(上海)有限公司 化学机械研磨设备及其研磨单元
WO2012094102A2 (en) 2011-01-03 2012-07-12 Applied Materials, Inc. Pressure controlled polishing platen
CN104956467B (zh) 2013-01-31 2018-02-16 应用材料公司 用于化学机械平坦化后的基板清洗的方法及设备
US10160092B2 (en) * 2013-03-14 2018-12-25 Cabot Microelectronics Corporation Polishing pad having polishing surface with continuous protrusions having tapered sidewalls
US9227297B2 (en) * 2013-03-20 2016-01-05 Applied Materials, Inc. Retaining ring with attachable segments
CN105659362B (zh) 2013-10-23 2019-11-26 应用材料公司 具有局部区域速率控制的抛光系统
US9368371B2 (en) * 2014-04-22 2016-06-14 Applied Materials, Inc. Retaining ring having inner surfaces with facets
US10207389B2 (en) 2014-07-17 2019-02-19 Applied Materials, Inc. Polishing pad configuration and chemical mechanical polishing system
US10105812B2 (en) 2014-07-17 2018-10-23 Applied Materials, Inc. Polishing pad configuration and polishing pad support
US10076817B2 (en) * 2014-07-17 2018-09-18 Applied Materials, Inc. Orbital polishing with small pad
US9873179B2 (en) * 2016-01-20 2018-01-23 Applied Materials, Inc. Carrier for small pad for chemical mechanical polishing
KR102535628B1 (ko) * 2016-03-24 2023-05-30 어플라이드 머티어리얼스, 인코포레이티드 화학적 기계적 연마를 위한 조직화된 소형 패드

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8858298B2 (en) * 2002-07-24 2014-10-14 Applied Materials, Inc. Polishing pad with two-section window having recess
JP2005294412A (ja) * 2004-03-31 2005-10-20 Toyo Tire & Rubber Co Ltd 研磨パッド
TWM294991U (en) * 2004-10-12 2006-08-01 Applied Materials Inc Polishing pad conditioner with shaped abrasive patterns and channels
TW201609313A (zh) * 2014-07-17 2016-03-16 應用材料股份有限公司 化學機械硏磨所用的方法、系統與硏磨墊

Also Published As

Publication number Publication date
JP6979030B2 (ja) 2021-12-08
KR20180119693A (ko) 2018-11-02
KR102363829B1 (ko) 2022-02-16
WO2017165216A1 (en) 2017-09-28
TWI846323B (zh) 2024-06-21
US10589399B2 (en) 2020-03-17
TW202406679A (zh) 2024-02-16
TW202220797A (zh) 2022-06-01
TW202322971A (zh) 2023-06-16
JP2022031724A (ja) 2022-02-22
KR102535628B1 (ko) 2023-05-30
US20170274498A1 (en) 2017-09-28
KR20220025234A (ko) 2022-03-03
JP7580543B2 (ja) 2024-11-11
TWI757275B (zh) 2022-03-11
CN108883515A (zh) 2018-11-23
TW201736041A (zh) 2017-10-16
JP7326405B2 (ja) 2023-08-15
JP2019510650A (ja) 2019-04-18
TWI836343B (zh) 2024-03-21
JP2023162199A (ja) 2023-11-08

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