JP2019510650A - 化学機械研磨のためのテクスチャード加工された小型パッド - Google Patents
化学機械研磨のためのテクスチャード加工された小型パッド Download PDFInfo
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- 238000005498 polishing Methods 0.000 title claims abstract description 364
- 239000000126 substance Substances 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 143
- 239000012528 membrane Substances 0.000 claims abstract description 73
- 238000007517 polishing process Methods 0.000 claims description 23
- 239000010410 layer Substances 0.000 description 25
- 239000002002 slurry Substances 0.000 description 14
- 239000012530 fluid Substances 0.000 description 11
- 238000005192 partition Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000010146 3D printing Methods 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 235000012773 waffles Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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Abstract
【選択図】図5A
Description
一部の化学機械研磨処理では、基板の表面にわたって不均一な厚さが生じる。例えば、バルク研磨処理では、基板上で研磨不足の領域が生じる場合がある。この問題に対処するため、バルク研磨の後に研磨不足の基板の部分に焦点を当てる「タッチアップ」研磨処理を実行することが可能である。
図1を参照すると、基板支持体105は、研磨パッドキャリア300の下方に配置されたプレート形状本体である。本体の上面128は、処理される基板を収容するのに十分に大きいローディング領域を提供する。例えば、基板は、直径200〜450mmの基板であってよい。基板支持体105の上面128は、基板10の背面(すなわち、研磨されていない表面)に接触し、その位置を保つ。
図1及び図2を参照すると、研磨パッド部分200は、研磨中に接触領域(ローディング領域とも呼ばれる)で基板10と接触する研磨面220を有する。研磨面220は、基板10の半径より小さな、最大側面寸法Dを有してもよい。例えば、研磨パッドの最大側面寸法は、基板の直径の約5〜10%であってもよい。例えば、直径が200mm〜300mmの範囲にあるウエハに関しては、研磨パッド表面220は、2〜30mm、例えば3〜10mm、例えば3〜5mmの最大横寸法を有しうる。より小型のパッドは、より高い精度をもたらすが、使用する速度がより遅くなる。
図6を参照すると、研磨パッドアセンブリ240は、研磨パッド部分200に制御可能な下向きの圧力を加えるように構成される研磨パッドキャリア300によって保持される。
図1、図7及び図8を参照すると、研磨駆動システム500は、研磨処理中に、連結された研磨パッドキャリア300と研磨パッド部分200を軌道運動で動かすように構成されうる。特に、図7で示されているように、研磨駆動システム500は、研磨処理中に、基板に対して固定された角度配向で研磨パッドを維持するように構成されうる。
基板上の不均一なスポットの大きさは、そのスポットを研磨するときのローディング領域の理想的な大きさを決定付ける。ローディング領域が大きすぎると、基板上の一部の領域での研磨不足の修正が、他の領域の過剰研磨引き起こすことがある。その一方で、ローディング領域が小さすぎると、研磨不足の領域をカバーするために基板を横切ってパッドを動かさなければならず、結果としてスループットが低下する。したがって、この実装によって、ローディング領域をスポットの大きさに適合させることができる。
Claims (15)
- 研磨処理中に基板を保持するように構成された基板支持体と、
膜及び前記研磨処理中に前記基板に接触する研磨面を有する研磨パッド部分を含む研磨パッドアセンブリであって、前記研磨パッド部分は前記膜の、前記研磨面に向かい合う側に接合され、前記研磨面は前記基板の直径の少なくとも4分の1より小さい前記研磨面に平行な幅を有し、前記研磨パッド部分の外面は少なくとも1つの凹部と前記研磨面を提供する上面を有する少なくとも1つの平坦凸部とを含み、前記研磨面は前記少なくとも1つの凹部の側壁と前記少なくとも1つの平坦凸部の上面との交差によって画定される複数のエッジを有する、研磨パッドアセンブリと、
前記研磨パッドアセンブリを保持し、前記研磨面を前記基板に押圧する研磨パッドキャリアと、
前記基板支持体と前記研磨パッドキャリアとの間に相対運動を引き起こすように構成された駆動システムと
を備える、化学機械研磨システム。 - 前記少なくとも1つの凹部は第1の複数の平行な溝を含む、請求項1に記載のシステム。
- 前記少なくとも1つの凹部は、前記第1の複数の溝に垂直な第2の複数の平行な溝を含む、請求項2に記載のシステム。
- 前記第1の複数の平行な溝は厳密には2〜6本の溝であり、前記第2の複数の溝も同じ数の溝である、請求項3に記載のシステム。
- 前記膜は、可撓性の小さい第2の部分によって囲まれた第1の部分を含み、前記研磨パッド部分は前記第1の部分に接合されている、請求項1に記載のシステム。
- 円形の膜と、
研磨処理中に基板に接触する研磨面を有する円形の研磨パッド部分と、
を含む研磨パッドアセンブリであって、
前記研磨パッド部分は前記膜の直径の少なくとも5分の1より小さい直径を有し、前記研磨パッド部分は前記円形の膜の中心の周りに配置され、前記研磨パッド部分の上面は一又は複数の凹部と、前記研磨面を提供する上面を有する一又は複数の平坦凸部とを含み、前記研磨面は、前記一又は複数の凹部の側壁と前記一又は複数の平坦凸部の上面との交差によって画定される複数のエッジを有する、研磨パッドアセンブリ。 - 前記一又は複数の凹部は第1の複数の平行な溝を含む、請求項6に記載のアセンブリ。
- 前記一又は複数の凹部は、前記第1の複数の溝に垂直な第2の複数の平行な溝を含む、請求項7に記載のアセンブリ。
- 前記第1の複数の平行な溝は厳密には2〜6本の溝であり、前記第2の複数の溝も同じ数の溝である、請求項8に記載のアセンブリ。
- 前記一又は複数の凹部は、前記研磨パッド部分の円周から径方向内向きに延在する複数の凹部を含む、請求項6に記載のアセンブリ。
- 前記一又は複数の凹部は複数の同心円状の環状溝を含む、請求項6に記載のアセンブリ。
- 前記一又は複数の平坦凸部は複数の分離された突起を含む、請求項6に記載のアセンブリ。
- 前記突起は間隙によって分離されており、前記平坦凸部の研磨パッド面に平行な方向の幅は、隣接する平坦凸部間の前記間隙の幅の約1〜5倍である、請求項12に記載のアセンブリ。
- 前記一又は複数の平坦凸部は相互接続された矩形のグリッドを含む、請求項6に記載のアセンブリ。
- 膜と、
研磨処理中に基板に接触する研磨面を有する凸状多角形研磨パッド部分と、
を含む研磨パッドアセンブリであって、
前記研磨パッド部分は前記膜の幅の少なくとも5分の1より小さい幅を有し、前記研磨パッド部分は円形の膜の中心の周りに配置され、前記研磨パッド部分の上面は一又は複数の凹部と、前記研磨面を提供する上面を有する一又は複数の平坦凸部とを含み、前記研磨面は、前記一又は複数の凹部の側壁と前記一又は複数の平坦凸部の上面との交差によって画定される複数のエッジを有する、研磨パッドアセンブリ。
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JP2023126338A JP2023162199A (ja) | 2016-03-24 | 2023-08-02 | 化学機械研磨のためのテクスチャード加工された小型パッド |
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KR20180119693A (ko) | 2018-11-02 |
TWI836343B (zh) | 2024-03-21 |
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JP6979030B2 (ja) | 2021-12-08 |
TW202220797A (zh) | 2022-06-01 |
US20170274498A1 (en) | 2017-09-28 |
JP2023162199A (ja) | 2023-11-08 |
WO2017165216A1 (en) | 2017-09-28 |
KR102535628B1 (ko) | 2023-05-30 |
US10589399B2 (en) | 2020-03-17 |
TWI757275B (zh) | 2022-03-11 |
TW201736041A (zh) | 2017-10-16 |
JP7326405B2 (ja) | 2023-08-15 |
KR102363829B1 (ko) | 2022-02-16 |
TW202322971A (zh) | 2023-06-16 |
TW202406679A (zh) | 2024-02-16 |
CN108883515A (zh) | 2018-11-23 |
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