TWI837434B - 照明光學系統、曝光裝置、及物品製造方法 - Google Patents
照明光學系統、曝光裝置、及物品製造方法 Download PDFInfo
- Publication number
- TWI837434B TWI837434B TW109138409A TW109138409A TWI837434B TW I837434 B TWI837434 B TW I837434B TW 109138409 A TW109138409 A TW 109138409A TW 109138409 A TW109138409 A TW 109138409A TW I837434 B TWI837434 B TW I837434B
- Authority
- TW
- Taiwan
- Prior art keywords
- optical system
- optical integrator
- optical
- frame member
- integrator
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 210
- 238000005286 illumination Methods 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000003384 imaging method Methods 0.000 claims abstract description 38
- 230000007246 mechanism Effects 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 8
- 230000035939 shock Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 13
- 238000009826 distribution Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 3
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Microscoopes, Condenser (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019-219854 | 2019-12-04 | ||
JP2019219854A JP7446096B2 (ja) | 2019-12-04 | 2019-12-04 | 照明光学系、および物品製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202122929A TW202122929A (zh) | 2021-06-16 |
TWI837434B true TWI837434B (zh) | 2024-04-01 |
Family
ID=76220027
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109138409A TWI837434B (zh) | 2019-12-04 | 2020-11-04 | 照明光學系統、曝光裝置、及物品製造方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7446096B2 (ja) |
KR (1) | KR20210070203A (ja) |
TW (1) | TWI837434B (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002050564A (ja) * | 2000-08-03 | 2002-02-15 | Canon Inc | 照明装置、投影露光装置並びにそれを用いたデバイス製造方法 |
JP2016100461A (ja) * | 2014-11-21 | 2016-05-30 | キヤノン株式会社 | 照明光学装置、およびデバイス製造方法 |
TW201820045A (zh) * | 2016-08-30 | 2018-06-01 | 日商佳能股份有限公司 | 照明光學系統、光刻裝置及物品製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4150472B2 (ja) * | 1998-07-03 | 2008-09-17 | 松下電器産業株式会社 | 対物レンズ駆動装置 |
JP2001155993A (ja) * | 1999-09-13 | 2001-06-08 | Nikon Corp | 照明光学装置及び該装置を備える投影露光装置 |
JP2003059799A (ja) * | 2001-08-10 | 2003-02-28 | Nikon Corp | 照明光学系、露光装置、及びマイクロデバイスの製造方法 |
JP2004253758A (ja) * | 2002-12-27 | 2004-09-09 | Nikon Corp | 照明光源ユニット、露光装置及び露光方法 |
JP2007041455A (ja) * | 2005-08-05 | 2007-02-15 | Matsushita Electric Ind Co Ltd | 光学装置の像振れ補正装置 |
JP6451187B2 (ja) * | 2014-09-30 | 2019-01-16 | セイコーエプソン株式会社 | 光学デバイスおよび画像表示装置 |
JP2016126103A (ja) * | 2014-12-26 | 2016-07-11 | セイコーエプソン株式会社 | 光学デバイス、画像表示装置および光学デバイスの製造方法 |
JP2018045060A (ja) * | 2016-09-13 | 2018-03-22 | キヤノン株式会社 | 照明装置、露光装置及び物品の製造方法 |
-
2019
- 2019-12-04 JP JP2019219854A patent/JP7446096B2/ja active Active
-
2020
- 2020-11-04 TW TW109138409A patent/TWI837434B/zh active
- 2020-11-30 KR KR1020200163823A patent/KR20210070203A/ko not_active Application Discontinuation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002050564A (ja) * | 2000-08-03 | 2002-02-15 | Canon Inc | 照明装置、投影露光装置並びにそれを用いたデバイス製造方法 |
JP2016100461A (ja) * | 2014-11-21 | 2016-05-30 | キヤノン株式会社 | 照明光学装置、およびデバイス製造方法 |
TW201820045A (zh) * | 2016-08-30 | 2018-06-01 | 日商佳能股份有限公司 | 照明光學系統、光刻裝置及物品製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20210070203A (ko) | 2021-06-14 |
JP7446096B2 (ja) | 2024-03-08 |
JP2021089371A (ja) | 2021-06-10 |
TW202122929A (zh) | 2021-06-16 |
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