TWI837302B - Support substrate, transfer device and transfer method for semiconductor wafer - Google Patents

Abstract

The present invention provides a semiconductor chip support substrate, a transfer device and a transfer method, which can transfer the semiconductor chip with high precision when transferring the semiconductor chip from the support substrate to the transferred substrate using a laser lift-off method. Specifically, the supporting substrate of the semiconductor chip has an adhesive layer on one side, the semiconductor chip is held by the adhesive layer, the holding state of the semiconductor chip is released by irradiating the semiconductor chip with laser light from the side opposite to the side holding the semiconductor chip, and kinetic energy is given to the semiconductor chip, and the surface of the side in contact with the semiconductor chip has a convex portion including the adhesive layer, the convex portion has adhesiveness at the front end surface, and when the entire area of the front end surface of the convex portion contacts the semiconductor chip, only the area equal to the surface of the semiconductor chip closest to the adhesive layer or the area further inward than the surface of the semiconductor chip closest to the adhesive layer contacts the semiconductor chip.

Description

Support substrate, transfer device and transfer method for semiconductor chip

The present invention relates to a mounting method and a mounting device for mounting a semiconductor chip with high precision and stability.

Semiconductor chips are becoming smaller due to cost reduction, and research has been ongoing to mount small semiconductor chips with high precision. In particular, semiconductor chips with a size of 50 μm×50 μm or less, called micro-LEDs (Luminescent Diodes), have been developed for use in displays, and micro-LEDs are required to be mounted with a precision of several μm and at high speed.

Patent document 1 describes a technology for transferring and mounting LED chips with high precision by eliminating the influence of air resistance during transfer through a transfer method. The transfer method comprises: a transfer substrate configuration step, which is to configure the transfer substrate in a vacuum environment in a manner that the LED chip on one side is held on the transfer substrate and the side opposite to the other side is opposite to each other with a gap; and a transfer step, which is to irradiate the transfer substrate with laser light to separate the LED chip from the transfer substrate, and to transfer the LED chip to the transfer substrate by imparting kinetic energy to the transfer substrate. Prior art documents Patent document

Patent document 1: Japanese Patent Publication No. 2018-60993

[The problem the invention is trying to solve]

In the support substrate for holding the semiconductor chip, there are many substrates that have an adhesive layer 103 containing an adhesive having a uniform thickness on the side surface of the support substrate 101 holding the semiconductor chip 6, such as shown in FIG5(A). In the state where the semiconductor chip 6 held by the support substrate 101 having the adhesive layer 103 and the adhesive layer 103 are in contact, there is a possibility that, for example, when the semiconductor chip 6 is pressed against the adhesive layer 103 in order to bond the semiconductor chip 6 to the adhesive layer 103 provided on the substrate 102, the adhesive layer 103 is deformed and the adhesive layer 103 is also wrapped around the side surface of the semiconductor chip. FIG5(A) shows a situation where the adhesive layer 103 is wrapped around the side surface 8a on the left side of the semiconductor chip 6.

In the state where the adhesive layer 103 is wrapped around the side surface 8a of the semiconductor chip 6, the method described in Patent Document 1 is used, that is, for the transferred substrate 9 which is spaced opposite to the supporting substrate 101 in a vacuum environment, the semiconductor chip 6 held on the supporting substrate 101 is transferred to the transferred substrate 9 by using the laser lift-off method. 5(B) , there is a difference in the timing of separation of each part of the semiconductor chip 6 from the adhesive layer 103 between the surface of the semiconductor chip 6 that contacts the adhesive layer 103, that is, the upper surface 7 and each side surface 8 of the semiconductor chip 6, or between the side surface 8a of the semiconductor chip 6 and the side surface 8 other than it. Therefore, there is a possibility that, as shown in FIG5(C) , when the semiconductor chip 6 is given kinetic energy from the supporting substrate 101 to the transferred substrate 9 by the laser lift-off method, the posture of the semiconductor chip 6 may be distorted, as shown in FIG5(D) , which may adversely affect the accuracy of transferring the semiconductor chip 6 to the transferred substrate 9.

In view of the above problems, the purpose of the present invention is to propose a semiconductor chip support substrate, transfer device and transfer method that can transfer the semiconductor chip with high precision when transferring the semiconductor chip from the support substrate to the transferred substrate using the laser lift-off method. [Technical means for solving the problem]

In order to solve the above-mentioned problems, the supporting substrate of the present invention is characterized in that: it is a supporting substrate for a semiconductor chip, has an adhesive layer on one side, holds the semiconductor chip via the adhesive layer, releases the holding state of the semiconductor chip by irradiating the semiconductor chip with laser light from the side opposite to the side holding the semiconductor chip, and imparts kinetic energy to the semiconductor chip; and the side in contact with the semiconductor chip has a convex portion including the adhesive layer, the convex portion has adhesiveness at the front end surface, and when the entire area of the front end surface of the convex portion contacts the semiconductor chip, only the area equal to the surface of the semiconductor chip closest to the adhesive layer or the area further inward than the surface of the semiconductor chip closest to the adhesive layer contacts the semiconductor chip.

Since the laser lift-off can be performed without the adhesive layer wrapping around the side of the semiconductor chip, it is less likely that the semiconductor chip will leave the adhesive layer at an inconsistent timing within the contact area between the semiconductor chip and the adhesive layer. The semiconductor chip falls onto the transferred substrate in a stable position, so transfer can be performed with high precision.

Furthermore, a supporting substrate for a semiconductor chip having the following characteristics may also be used, namely, when the entire area of the above-mentioned front end surface of the above-mentioned protrusion contacts the above-mentioned semiconductor chip, only the area on the inner side of the surface of the above-mentioned semiconductor chip closest to the above-mentioned adhesive layer, including the center or center of gravity of the surface of the above-mentioned semiconductor chip closest to the above-mentioned adhesive layer, contacts the above-mentioned semiconductor chip.

By forming the area in contact with the adhesive layer of the semiconductor chip into a smaller area including the center or center of gravity of the semiconductor chip, the timing of the semiconductor chip leaving the adhesive layer is less likely to be inconsistent due to the smaller contact area. In addition, since the contact area includes the center or center of gravity, the posture of the semiconductor chip falling onto the second supporting substrate is more stable, so transfer can be performed with high precision.

Furthermore, a supporting substrate for a semiconductor chip having the following characteristics may be used, namely, the front end surface of the protrusion is circular.

By forming the area in contact with the adhesive layer of the semiconductor chip into a circular area, the entire front end face can be irradiated with laser light efficiently.

The transfer device of the present invention is characterized in that it uses laser light to transfer semiconductor chips, and has: a supporting substrate, which holds one side of the semiconductor chip; a supporting substrate holding portion, which holds the supporting substrate; a laser light irradiation portion, which irradiates laser light to the semiconductor chip; and a transferred substrate holding portion, which holds the transferred substrate to which the semiconductor chip is transferred; and the supporting substrate has a convex portion including an adhesive layer on the side holding the semiconductor chip, the convex portion has adhesiveness on the front end surface, and the entire area of the front end surface of the convex portion, when in contact with the semiconductor chip, is only in the area equal to the surface of the semiconductor chip closest to the adhesive layer or the area closest to the semiconductor chip. The area closer to the surface of the adhesive layer is in contact with the semiconductor chip. While the transferred substrate is held by the transferred substrate holding portion in a manner that the surface of the semiconductor chip held on the supporting substrate opposite to the supporting substrate side and the surface of the transferred substrate on the side on which the semiconductor chip is transferred are spatially opposed to each other, the holding state of the semiconductor chip is released by irradiating the semiconductor chip from the laser light irradiation portion from the side opposite to the side of the supporting substrate on which the semiconductor chip is held, and the semiconductor chip is transferred to the transferred substrate by giving kinetic energy to the semiconductor chip from the side of the semiconductor chip when observed from the adhesive layer.

By using the transfer device of the present invention, laser lift-off can be performed in a state where there is no adhesive layer wrapped around the side of the semiconductor chip. Therefore, it is not easy to produce inconsistency in the timing of the semiconductor chip leaving the adhesive layer within the contact range between the semiconductor chip and the adhesive layer. The posture of the semiconductor chip falling to the transferred substrate is stable, so the transfer can be performed with high precision.

Furthermore, in the transfer device of the present invention, its feature may also be that: the above-mentioned transferred substrate has a convex portion including an adhesive layer on the side to which the above-mentioned semiconductor chip is transferred, the above-mentioned convex portion of the above-mentioned transferred substrate has adhesiveness on the front end surface, and when the entire area of the above-mentioned front end surface of the above-mentioned convex portion of the above-mentioned transferred substrate contacts the above-mentioned semiconductor chip, only in the area equal to the surface of the above-mentioned semiconductor chip closest to the above-mentioned adhesive layer or in the area further inner than the surface of the above-mentioned semiconductor chip closest to the above-mentioned adhesive layer.

By using a transferred substrate having an adhesive layer of the same shape as that of a supporting substrate and not wrapping around the side surface of a semiconductor chip, high-precision transfer is possible even when the transferred substrate is used as a supporting substrate to be transferred to another transferred substrate or a mounting substrate.

The transfer method of the present invention is characterized in that it is a transfer method for transferring a semiconductor chip using laser light, and comprises: a semiconductor chip holding step, in which the adhesive layer of the supporting substrate holds one side of the semiconductor chip; and a transfer step, in which the transferred substrate is arranged at a position where the surface of the semiconductor chip held by the adhesive layer of the supporting substrate, which is opposite to the side of the supporting substrate, and the surface of the transferred substrate, on which the semiconductor chip is transferred, are spatially opposed to each other, and the holding state of the semiconductor chip by the supporting substrate is released by irradiating the semiconductor chip from the side of the supporting substrate opposite to the side on which the semiconductor chip is held, and the semiconductor chip is transferred to the transferred substrate by irradiating the semiconductor chip with laser light. The semiconductor chip is transferred to the transferred substrate by imparting kinetic energy to the conductive chip; and the supporting substrate is characterized in that: the side surface holding the semiconductor chip has a convex portion including the adhesive layer, the convex portion has adhesiveness at the front end surface, and when the entire area of the front end surface of the convex portion contacts the semiconductor chip, only the area equal to the surface of the semiconductor chip closest to the adhesive layer or the area further inward than the surface of the semiconductor chip closest to the adhesive layer contacts the semiconductor chip; and the semiconductor chip holding step is to adhere the above-mentioned one side of the semiconductor chip to the above-mentioned front end surface of the convex portion of the adhesive layer of the supporting substrate so that the semiconductor chip is held on the supporting substrate.

Since the laser lift-off is performed without the adhesive layer wrapping around the side of the semiconductor chip, it is not easy for the semiconductor chip to leave the adhesive layer at an inconsistent timing within the contact range between the semiconductor chip and the adhesive layer. Therefore, the semiconductor chip falls to the transferred substrate in a stable posture, so it can be transferred with high precision.

Furthermore, the transfer method of the present invention may also be characterized in that: the above-mentioned transferred substrate has a convex portion including an adhesive layer on the side of the above-mentioned transferred substrate to which the above-mentioned semiconductor chip is transferred, the front end surface of the above-mentioned convex portion of the above-mentioned transferred substrate is adhesive, and when the entire area of the above-mentioned front end surface of the above-mentioned convex portion of the above-mentioned transferred substrate contacts the above-mentioned semiconductor chip, only the area equal to the surface of the above-mentioned semiconductor chip closest to the above-mentioned adhesive layer or the area on the inner side of the surface of the above-mentioned semiconductor chip closest to the above-mentioned adhesive layer contacts the above-mentioned semiconductor chip.

By using a transferred substrate having an adhesive layer of the same shape as the supporting substrate that does not wrap around the side surface of the semiconductor chip, high-precision transfer is possible even when transferring to another transferred substrate or mounting substrate. [Effect of the invention]

By using the semiconductor chip support substrate, transfer device and transfer method of the present invention, when the semiconductor chip is transferred from the support substrate to the transferred substrate using the laser lift-off method, it is possible to prevent the semiconductor chip from being disordered when the semiconductor chip is given kinetic energy toward the transferred substrate due to the adhesive layer of the support substrate wrapping around to the side of the semiconductor chip, thereby transferring the semiconductor chip with high precision.

The following diagrams are used to illustrate the implementation forms of the semiconductor chip support substrate, transfer device and transfer method of the present invention. Example 1

FIG1 shows an embodiment of the semiconductor chip support substrate of the present invention in Example 1. FIG1(A) is a top view of the semiconductor chip support substrate 1 of Example 1, and FIG1(B) is a view viewed along the direction of arrow a in FIG1(A). The support substrate 1 has a flat plate, i.e., a substrate 2, which is a material that allows laser light to pass, such as _SiO2 or sapphire, and an adhesive layer 3, which is a material that has adhesive properties, such as polyimide, polysilicone, or dimethyl polysiloxane (PDMS).

In this embodiment, the adhesive layer 3 is, for example, polyimide or polysilicon containing a photosensitive material, and has the property of being decomposed to generate a gas component by being irradiated with laser light. The adhesive layer 3 has the following function, that is, when the laser light passes through the substrate 2 from the substrate 2 side of the support substrate 1 from the laser light irradiation part (not shown) and irradiates toward the semiconductor chip 6 held on the support substrate 1 by contacting with the adhesive layer 3, the polymer of the adhesive layer 3 is decomposed and gasified, thereby releasing the state of holding the semiconductor chip 6 by the support substrate 1 and giving kinetic energy to the semiconductor chip 6. By having such a function, the semiconductor chip 6 held on the support substrate 1 can be transferred by the laser lift-off method.

The adhesive layer 3 is provided on one side of the substrate 2, and a plurality of convex portions 4 in the shape of convex portions are formed on the side of the substrate 2. As shown in FIG1(B), the support substrate 1 of the present embodiment does not have the adhesive layer 3 provided on the area other than the convex portions 4 on the substrate 2. Such an adhesive layer 3 can be formed, for example, by applying an adhesive constituting the adhesive layer 3 to the entire surface of the substrate 2 with a uniform thickness using a slit coating machine, and then removing the adhesive layer 3 other than the convex portions 4 using a photolithography method, or by forming a pattern of the adhesive layer 3 on the substrate 2 using an inkjet method to form the convex portions 4, or by forming the adhesive layer 3 using other methods.

FIG. 2(A) shows a view of the support substrate 1 holding a semiconductor chip 6, as viewed from the same direction as the direction of arrow a in FIG. 1(A). FIG. 3 is a view viewed from the direction of arrow b in FIG. 2(A), showing the range of contact between the front end face 5 of the support substrate 1 and a semiconductor chip 6. As shown in the hatched areas of FIG. 2(A) and FIG. 3, when contacting the semiconductor chip 6, the entire area of the front end face 5 of each protrusion 4 contacts the semiconductor chip 6 only in the area on the inner side of the upper surface 7, which is the surface of the semiconductor chip 6 closest to the adhesive layer 3. That is, when the support substrate 1 holds the semiconductor chip 6, only the front end face 5 of the semiconductor chip 6 contacts the adhesive layer 3, and the entire area of each front end face 5 in contact with the semiconductor chip 6 contacts the semiconductor chip 6. The entire area of the front face 5 is in contact with the surface of the semiconductor chip 6 closest to the adhesive layer 3, that is, the area on the inner side of the upper surface 7, so that the support substrate 1 holds the semiconductor chip 6.

Here, the entire area of the front end face 5 is located on the inner side compared to the area of the upper surface 7 of the semiconductor chip 6 in contact with the front end face 5. Therefore, even if the semiconductor chip 6 is pressed against the adhesive layer 3 to maintain the semiconductor chip 6 on the supporting substrate 1 and causes the adhesive layer 3 to be deformed, there is no wrapping of the adhesive layer 3 toward the side surface 8 of the semiconductor chip 6.

By using the supporting substrate 1 of the present embodiment, even if, as shown in FIG2(B), the laser light irradiation unit not shown is used to transmit the laser light from the substrate 2 side of the supporting substrate 1 through the substrate 2 and irradiate the entire front end surface 5 toward the semiconductor chip 6 held on the supporting substrate 1 by contact with the adhesive layer 3, so that the semiconductor chip 6 is peeled off from the adhesive layer 3 and kinetic energy is given to the semiconductor chip 6, there will be no deviation in the timing of the semiconductor chip 6 leaving the adhesive layer 3 within the range where the upper surface 7 of the supporting substrate 1 is in contact with the adhesive layer 3. Instead, as shown in FIG2(C), the falling posture of the semiconductor chip 6 is stable, and as shown in FIG2(D), it can be transferred to the transferred substrate 9 with high precision.

Furthermore, the support substrate 1 of the present invention may also be a support substrate 1 having a front end face 5, wherein when the support substrate 1 holds the semiconductor chip 6, the area of the front end face 5 is in contact with the area including the center or center of gravity of the upper surface 7, which is the surface of the semiconductor chip 6 closest to the adhesive layer 3. By using the support substrate 1 having such a front end face 5 and transferring the semiconductor chip 6 to the transferred substrate 9 by the laser lift-off method, the entire area of the front end face is in contact with the area including the center or center of gravity of the upper surface 7, so that when the semiconductor chip 6 leaves the adhesive layer 3 in FIG. 2 (B) to FIG. 2 (C), the falling posture of the semiconductor chip 6 is more stable, and therefore, the transfer can be performed with higher accuracy than the example in which the entire area of the front end face 5 is in contact with the area not including the center or center of gravity of the semiconductor chip 6. Furthermore, it is better if the center or center of gravity of the front end surface 5 and the upper surface 7 are roughly consistent. Example 2

FIG4 is used to illustrate the embodiment of the semiconductor chip support substrate 11 of the semiconductor chip support substrate embodiment 2 of the present invention. FIG4 shows the relationship between the size and position of the front end face 15 and the upper surface 7 as viewed along the direction of the arrow b in FIG2(A) as described in the embodiment 1. The front end face 15 of the adhesive layer 13 of the support substrate 11 has a circular area, and the entire area of the front end face 15 is in contact with the upper surface 7 inside the area of the upper surface 7 of the semiconductor chip 6. Because the front end face 15 has a circular area, when the laser light is irradiated from the side of the support substrate 11 to the semiconductor chip 6 by the laser light irradiation unit not shown in the figure, as shown in FIG2(B), the laser light can be efficiently irradiated only to the area of the front end face 15.

If the shape of the area of the front end face 15 is rectangular, when the laser light is used in a circular shape and the entire area of the front end face 15 is to be irradiated with the laser light, the laser light will be irradiated with the circular range including the rectangular front end face 15. This state is shown in FIG6. FIG6(A) is a view observed along the c arrow direction of FIG2(B). In FIG6(A), the irradiation range 18 of the laser light is a circular area including the entire area of the front end face 15 of the adhesive layer 13, so the area 16 other than the area of the rectangular front end face 15 is also irradiated with the laser light. The area 16 includes a part of the upper surface 7 of the semiconductor chip 6, so there is a possibility that the semiconductor chip 6 is irradiated with the laser light and the semiconductor chip 6 is damaged. FIG. 6(B) shows the range of the region 17 in the upper surface 7 of the semiconductor chip 6 which may be damaged by being irradiated with the circular laser light.

In contrast, by using the supporting substrate 11 of this embodiment, the circular laser light can be efficiently irradiated only to the entire area of the front end surface 15 of the adhesive layer 13, thereby reducing damage to the semiconductor chip 6. Embodiment 3

An example of the transfer device of the present invention is described with reference to Fig. 7. The transfer device 20 of the third embodiment of the present invention comprises a supporting substrate 1, a supporting substrate holding portion 22, a laser light irradiation portion 23, and a transferred substrate holding portion 24.

The supporting substrate 1 is the same as the supporting substrate 1 described in Example 1 using FIG. 1 .

The support substrate holding part 22 has an opening, and holds the support substrate 1 holding the semiconductor chip 6 in advance in such a manner that the side holding the semiconductor chip 6 faces the lower side in the Z-axis direction. At this time, the support substrate 1 is held by the support substrate holding part 22 in such a positional relationship that at least the semiconductor chip 6 held on the support substrate 1 is included in the opening range of the support substrate holding part 22 with respect to the Z-axis direction. Thereby, the laser light 25 generated from the laser light irradiation part 23 can be irradiated to the semiconductor chip 6 held by the support substrate 1 held on the support substrate holding part 22 through the opening of the support substrate holding part 22.

The laser light irradiation unit 23 includes a laser light source 26, a galvanometer mirror 27, and an fθ lens. The laser light source 26 is a light source for irradiating the laser light 25. The galvanometer mirror 27 can rotate on two axes and has a function of reflecting the laser light 25 at any angle. The fθ lens 28 has a function of focusing the laser light 25 from the galvanometer mirror 27 at a specific position.

With this structure, the laser light irradiation unit 23 irradiates the laser light 25 from the laser light source 26 from the upper part in the Z-axis direction of the supporting substrate 1 held by the supporting substrate holding unit 22, that is, the opposite side of the side holding the semiconductor chip 6, by aligning the focus of the laser light 25 through the galvanometer mirror 27 and the fθ lens 28 to any semiconductor chip 6 held on the supporting substrate 1.

The transferred substrate holding portion 24 is located at the lower side of the supporting substrate holding portion 22 in the Z-axis direction, and holds the transferred substrate 9 in a manner opposite to the supporting substrate 1 with a gap. The transferred substrate holding portion 24 has a moving portion 29 that can move in the X-axis direction and the Y-axis direction, and can determine a specific position of the transferred substrate 9 at a specific transferred position in the X-axis direction and the Y-axis direction relative to an arbitrary semiconductor chip 6 held by the supporting substrate 1 held by the supporting substrate holding portion 22.

The transferred substrate holding portion 24 is used to align a specific position on the transferred surface 10 of the transferred substrate 9 with the position of a specific semiconductor chip 6 held by the opposite supporting substrate 1 in the X-axis direction and the Y-axis direction. The laser light irradiation portion 23 is used to irradiate the semiconductor chip 6 held at a specific position on the supporting substrate 1 with laser light 25, thereby transferring the specific semiconductor chip 6 to the specific position of the transferred surface 10 of the transferred substrate 9.

By using the present transfer device 20, as described above, the supporting substrate 1 has a shape in which there is no winding of the adhesive layer toward the side of the semiconductor chip 6. Therefore, it is not easy to produce inconsistency in the timing of the semiconductor chip 6 leaving the adhesive layer within the range where the semiconductor chip 6 and the adhesive layer are in contact. The falling posture of the semiconductor chip 6 during transfer is stable. Therefore, the semiconductor chip 6 can be transferred with high precision at a specific position of the transfer surface 10 of the transfer substrate 9.

Here, the transfer device 20 of the third embodiment can also use a transferred substrate 9 ′ having the same structure as the supporting substrate 1 as the transferred substrate 9 .

The transferred substrate 9' has an adhesive layer forming convex portions similarly to the supporting substrate 1. The convex portions have adhesive properties at the front end surface. The semiconductor chip 6 is held by the transferred substrate by the front end surface having adhesive properties being in contact with the surface of the side to be transferred of the semiconductor chip 6. In this embodiment, the arrangement of the convex portions is different from that of the supporting substrate 1, for example, the distance between adjacent convex portions is greater than the distance between adjacent convex portions of the supporting substrate 1.

In this way, the transferred substrate 9' on which the semiconductor chip 6 is transferred and held in the transferred substrate holding portion 24 can be taken out from the transferred substrate holding portion 24, and the transferred substrate 9' can be reversed in the Z-axis direction, and the side on which the semiconductor chip 6 is held in the supporting substrate holding portion 22 can be oriented downward in the Z-axis direction, and the transferred substrate 9' can be held by the supporting substrate holding portion 22 as a new supporting substrate.

The transferred substrate 9 uses a transferred substrate 9' having the same structure as the supporting substrate 1, thereby eliminating the wrapping of the adhesive layer of the transferred substrate 9' toward the side of the semiconductor chip 6. Therefore, even if the transferred substrate 9' is further transferred to another transferred substrate or mounting substrate as a supporting substrate, it can be transferred with high precision. Example 4

The transfer method of the fourth embodiment of the present invention includes a semiconductor wafer holding step (S1) and a transfer step (S2) as shown in the flow chart of Fig. 8. Each step is described using Fig. 9 and Fig. 2.

The semiconductor chip holding step (S1) is a step of holding the semiconductor chip 6 on the supporting substrate 1 described in Embodiment 1.

In the semiconductor chip holding step (S1), with respect to the surface of the semiconductor chip 6 that is closest to the adhesive layer 3 of the supporting substrate 1, i.e., the upper surface 7, the front end face 5 of the protrusion 4 of the adhesive layer 3 of the supporting substrate 1 is brought into contact with the upper surface 7 in such a way that the entire area of the adhesive front end face 5 enters the inner side of the area of the upper surface 7, thereby holding the semiconductor chip 6 on the supporting substrate 1.

Here, in an example where a plurality of semiconductor chips 6 are simultaneously held on the support substrate 1, a carrier substrate 30 holding the semiconductor chips 6 is prepared. The carrier substrate 30 has a carrier substrate adhesive layer 31 on one side, and as shown in FIG. 9(A), for example, the carrier substrate adhesive layer 31 is in contact with the bottom surface 37 on the opposite side of the upper surface 7 of the semiconductor chip 6 to hold the semiconductor chip 6. The carrier substrate adhesive layer 31 is made in such a way that the adhesion force generated by adhesion between the carrier substrate adhesive layer 31 and the bottom surface 37 is smaller than the adhesion force generated by adhesion when the front end surface 5 of the support substrate 1 is in contact with the upper surface 7.

Furthermore, according to the configuration of the upper surfaces 7 of the plurality of semiconductor chips 6 on the carrier substrate 30, the configuration of the front end surface 5 of the protrusion 4 of the adhesive layer 3 supporting the substrate 1 is formed in a configuration in which the entire area of each front end surface 5 is in contact with the inner side of the area of the opposite upper surface 7 when each front end surface 5 is in contact with each upper surface 7.

At a position where the front end face 5 of the supporting substrate 1 and the upper surface 7 of the semiconductor chip 6 held on the carrier substrate 30 are opposite to each other with a gap therebetween, the entire area of each front end face 5 is in contact with the upper surface 7 in an area equal to or inner to the range of the upper surface 7 of the specific semiconductor chip 6, and after the positional relationship of the carrier substrate 30 and the supporting substrate 1 in the X-axis and Y-axis directions is determined in advance by a position not shown in the figure, the upper surface 7 and the front end face 5 are brought close to each other in the Z-axis direction and then contacted.

Here, the carrier substrate adhesive layer 31 is manufactured in such a manner that the adhesion force generated by adhesion between the carrier substrate adhesive layer 31 and the bottom surface 37 is smaller than the adhesion force generated by adhesion between the front end surface 5 and the upper surface 7 of the supporting substrate 1. Therefore, if the carrier substrate 30 is separated from the supporting substrate 1 after the front end surface 5 and the upper surface 7 are brought into contact, the adhesion force generated by adhesion between the front end surface 5 and the upper surface 7 is larger than the adhesion force generated by adhesion between the bottom surface 37 and the carrier substrate adhesive layer 31. Therefore, the bottom surface 37 is peeled off from the carrier substrate adhesive layer 31, and the semiconductor chip 6 is retained on the supporting substrate 1. Thereby, the semiconductor chip 6 can be held on the supporting substrate 1 in such a manner that the entire area of each front end face 5 is equal to the area of the upper surface 7 of the specific semiconductor chip 6 or the area inside thereof is in contact with the upper surface 7 .

The transfer step (S2) is a step of transferring the semiconductor chip 6 held on the supporting substrate 1 to the transfer surface 10 of the transfer substrate 9 using a laser lift-off method.

First, using the transfer device 20 illustrated in FIG. 7 of Example 3, for example, the support substrate 1 holding the semiconductor chip 6 in the semiconductor chip holding step (S1) is held on the support substrate holding portion 22 in such a manner that the bottom surface 37 of the semiconductor chip 6 is on the lower side in the Z-axis direction.

Next, as shown in FIG. 9(B), the transferred substrate 9 is held by the transferred substrate holding portion 24 in such a manner that the transferred surface 10 of the transferred substrate 9 is facing upward in the Z-axis direction. Then, the specific position on the transferred surface 10 of the transferred substrate 9 is positioned so as to be aligned with the position in the X-axis direction and the Y-axis direction of the specific semiconductor chip 6 held by the opposing supporting substrate 1, and the laser light irradiation portion (not shown) irradiates the semiconductor chip 6 held at the specific position of the supporting substrate 1 through the substrate 2 of the supporting substrate 1, thereby transferring the specific semiconductor chip 6 to the specific position of the transferred surface 10 of the transferred substrate 9.

By using the present transfer method, transfer can be performed without the presence of an adhesive layer wrapping around the side surface 8 of the semiconductor chip 6. Therefore, during transfer, it is not easy for the semiconductor chip 6 to leave the adhesive layer 3 at an inconsistent timing within the contact range between the semiconductor chip 6 and the adhesive layer 3, and the falling posture of the semiconductor chip 6 during transfer is stable. Therefore, the semiconductor chip 6 can be transferred to a specific position of the transfer surface 10 of the transfer substrate 9 with high precision.

Furthermore, in the transfer step (S2), a transferred substrate 9' having an adhesive layer having the same structure as the supporting substrate 1 described in the first embodiment may be used instead of the transferred substrate 9.

The transferred substrate 9' has an adhesive layer forming convex portions similarly to the supporting substrate 1. The convex portions have adhesive properties at the front end surface. By contacting the front end surface having adhesive properties with the surface of the semiconductor chip 6 on the side to be transferred, the transferred substrate can be used to hold the semiconductor chip 6. In this embodiment, the arrangement of the convex portions is different from that of the supporting substrate 1, for example, the distance between adjacent convex portions is greater than the distance between adjacent convex portions of the supporting substrate 1.

Thereby, the transferred substrate 9' can be transferred to another transferred substrate or a mounting substrate with high accuracy as a new supporting substrate.

The above is an explanation of the embodiments of the present invention, but the present invention is not limited thereto. For example, the supporting substrate of the present invention may be such that the entire area of the front end surface of the protrusion of the adhesive layer is in contact with the semiconductor chip, not only in the area further inside the surface of the semiconductor chip closest to the adhesive layer, but also in the area equal to the surface of the semiconductor chip closest to the adhesive layer.

Furthermore, the protrusion of the supporting substrate of the present invention may have a plurality of front end faces, and all regions of the plurality of front end faces may be in contact with the region of the surface of a semiconductor chip closest to the adhesive layer.

Furthermore, the adhesive layer of the support substrate of the present invention may also exist in a portion other than the protrusion. For example, as shown in FIG. 10(A) (B), a surface 46 different from the front end surface 45 of the protrusion 44 may also exist in the surface of the adhesive layer 43 of the support substrate 41 on the opposite side of the substrate 2. FIG. 10(A) is a top view of the support substrate 41 observed from the adhesive layer 43 side, and FIG. 10(B) is a view observed along the direction of the arrow d in FIG. 10(A).

Furthermore, the adhesive layer 43 of the support substrate of the present invention may not have adhesiveness over the entire range, but may have adhesiveness only on the front end surface 45.

Furthermore, the support substrate of the present invention may be an adhesive layer having only adhesive properties without containing a material that decomposes to generate a gas component when irradiated with laser light. In this case, a sacrificial layer containing a material that decomposes to generate a gas component when irradiated with laser light may be provided on the semiconductor chip side, or the material of the semiconductor chip may contain a material that decomposes to generate a gas component when irradiated with laser light.

Furthermore, as long as the laser irradiation unit of the transfer device of the present invention can irradiate laser light to any position, it is not limited to the configuration of Embodiment 3. For example, a polygonal mirror may be used instead of the galvanometer mirror 27 shown in FIG. 7 , and a mask may be used instead of the galvanometer mirror 27 and the fθ lens 28 .

Furthermore, the transfer device of the present invention may be a support substrate holding portion having a movable portion that is movable in the X-axis direction and the Y-axis direction relative to the support substrate holding portion 22 of embodiment 3 illustrated in FIG. 7 , or may be configured as follows, i.e., the movable portion of the support substrate holding portion 22 moves in the X-axis direction and the Y-axis direction while holding the support substrate 1, so that the position of any semiconductor chip 6 held on the support substrate 1 is aligned with the position of the laser light 25 irradiated from the laser light source 26, and then the laser light 25 is irradiated.

In addition, in the semiconductor chip holding step (S1) of the transfer method of the present invention illustrated in Figure 9 (A), as long as the upper surface 7 of the semiconductor chip 6 and the front end surface 5 of the protrusion 4 of the adhesive layer 3 of the supporting substrate 1 can be in contact with each other in a specific positional relationship, for example, a carrier substrate 30 provided with a carrier substrate adhesive layer 31 can be used and the semiconductor chip 6 can be held on the supporting substrate 1 by utilizing a laser lift-off method. The carrier substrate adhesive layer 31 has the following function: by irradiating laser light to generate a gas component, the holding state of the held semiconductor chip is released and kinetic energy is imparted to the semiconductor chip 6.

In addition, the semiconductor chip holding step (S1) of the transfer method of the present invention illustrated in Figure 9 (A) may also be that, for a semiconductor chip 6 that is directly held by a holding device not shown in the figure without using a carrier substrate 30, the semiconductor chip 6 is moved in a manner such that when the front end face 5 contacts the upper surface 7, the entire area of the front end face 5 contacts an area that is equal to an area of the opposite upper surface 7 or an inner side of an area of the opposite upper surface 7, and then the front end face 5 of the supporting substrate 1 contacts the upper surface 7 of the semiconductor chip 6, thereby holding the semiconductor chip 6 on the supporting substrate 1.

Furthermore, when a substrate having the same structure as the supporting substrate 1 described in Example 1 is used as the substrate to be transferred in the transfer device and transfer method of the present invention, the arrangement of the protrusions of the adhesive layer of the transferred substrate can be the same as the arrangement of the protrusions of the adhesive layer of the supporting substrate. Furthermore, the number of the front end faces of the supporting substrate can be the same as the number of the front end faces of the transferred substrate, or can be different.

1: Support substrate 2: Substrate 3: Adhesive layer 4: Protrusion 5: Front end surface 6: Semiconductor chip 7: Upper surface 8: Side surface 8a: Side surface 9: Transfer substrate 9': Transfer substrate 10: Transfer surface 11: Support substrate 13: Adhesive layer 15: Front end surface 16: Area 17: Area 18: Irradiation range 20: Transfer device 22: Support substrate holding portion 23: Laser light irradiation part 24: Transfer substrate holding part 25: Laser light 26: Laser light source 27: Galvanometer mirror 28: fθ lens 29: Moving part 30: Carrier substrate 31: Carrier substrate adhesive layer 37: Bottom surface 41: Support substrate 43: Adhesive layer 44: Protrusion 45: Front end surface 46: Surface 101: Support substrate 102: Substrate 103: Adhesive layer

Figures 1(A) and (B) are diagrams illustrating a semiconductor chip support substrate of Example 1 of the present invention. Figures 2(A) to (D) are diagrams illustrating a transfer method using a semiconductor chip support substrate of the present invention. Figure 3 is a diagram observed along the direction of arrow b in Figure 2(A), and is a diagram illustrating a semiconductor chip support substrate of Example 1 of the present invention. Figure 4 is a diagram illustrating a semiconductor chip support substrate of Example 2 of the present invention, and is a diagram observed from the same direction as the direction of arrow b in Figure 2(A) of Example 1. Figures 5(A) to (D) are diagrams illustrating transfer using a support substrate having an adhesive layer having a uniform thickness over the entire surface. Figures 6(A) and (B) are diagrams observed along the direction of arrow c in Figure 2(B). Figure 7 is a diagram illustrating a transfer device of Example 3 of the present invention. FIG8 is a flow chart for explaining the transfer method of Example 4 of the present invention. FIG9(A) and (B) are diagrams for explaining the transfer method of Example 4 of the present invention. FIG10(A) and (B) are diagrams for explaining other forms of the supporting substrate of the present invention.

1: Support substrate

2: Substrate

3: Adhesive layer

4: Convex part

5: Front end

6: Semiconductor chip

7: Upper surface

8: Side

9: Transferred substrate

25: Laser light

Claims (7)

A semiconductor chip support substrate, characterized in that: it has an adhesive layer on one side, holds the semiconductor chip via the adhesive layer, releases the holding state of the semiconductor chip by irradiating the semiconductor chip with laser light from the side opposite to the side holding the semiconductor chip, and imparts kinetic energy to the semiconductor chip; and the side contacting the semiconductor chip has a convex portion including the adhesive layer, the front end surface of the convex portion has adhesiveness, and when the entire area of the front end surface of the convex portion contacts the semiconductor chip, only the area further inside the surface of the semiconductor chip closest to the adhesive layer contacts the semiconductor chip. As in claim 1, the entire area of the front end surface of the protrusion contacts the semiconductor chip only in the area that is inside the surface of the semiconductor chip closest to the adhesive layer and includes the center or center of gravity of the surface of the semiconductor chip closest to the adhesive layer. A supporting substrate for a semiconductor chip as claimed in claim 1 or 2, wherein the front end surface of the protrusion is circular. A transfer device, characterized in that it uses laser light to transfer semiconductor chips, and comprises: a supporting substrate, which holds one side of the semiconductor chip; a supporting substrate holding portion, which holds the supporting substrate; a laser light irradiation portion, which irradiates the semiconductor chip with laser light; and a transferred substrate holding portion, which holds the transferred substrate to which the semiconductor chip is transferred; and the supporting substrate has a convex portion including an adhesive layer on the side holding the semiconductor chip, the convex portion has adhesiveness on the front end surface, and the entire area of the front end surface of the convex portion, when in contact with the semiconductor chip, is only in the area further inside than the surface of the semiconductor chip closest to the adhesive layer. The semiconductor chip is brought into contact with the semiconductor chip region, and the transferred substrate is held by the transferred substrate holding portion in a state where the surface of the semiconductor chip held on the supporting substrate opposite to the supporting substrate side and the surface of the transferred substrate side on which the semiconductor chip is transferred face each other with a space therebetween. The holding state of the semiconductor chip is released by irradiating the semiconductor chip from the laser light irradiating portion from the side opposite to the side of the supporting substrate on which the semiconductor chip is held, and the semiconductor chip is transferred to the transferred substrate by imparting kinetic energy to the semiconductor chip from the side of the semiconductor chip when viewed from the adhesive layer. The transfer device of claim 4, wherein the transferred substrate has a convex portion including an adhesive layer on the side of the transferred substrate to which the semiconductor chip is transferred, and the front end surface of the convex portion of the transferred substrate has adhesiveness, and when the entire area of the front end surface of the convex portion of the transferred substrate contacts the semiconductor chip, only the area equal to the surface of the semiconductor chip closest to the adhesive layer or the area further inward than the surface of the semiconductor chip closest to the adhesive layer contacts the semiconductor chip. A semiconductor chip transfer method is characterized in that it is a transfer method for transferring semiconductor chips using laser light, and comprises: a semiconductor chip holding step, in which an adhesive layer of a supporting substrate holds one side of the semiconductor chip; and a transfer step, in which the transferred substrate is arranged at a position where a surface of the semiconductor chip held by the adhesive layer of the supporting substrate, which is opposite to the supporting substrate side, and a surface of the transferred substrate, on which the semiconductor chip is transferred, is spatially opposed to each other, and the holding state of the semiconductor chip by the supporting substrate is released by irradiating the semiconductor chip with laser light from the side of the supporting substrate opposite to the side on which the semiconductor chip is held, and The semiconductor chip is transferred to the transferred substrate by imparting kinetic energy to the semiconductor chip; and the supporting substrate is characterized in that: the side surface holding the semiconductor chip has a convex portion including the adhesive layer, the convex portion has adhesiveness at the front end surface, and when the entire area of the front end surface of the convex portion contacts the semiconductor chip, only the area further inward than the surface of the semiconductor chip closest to the adhesive layer contacts the semiconductor chip; and the semiconductor chip holding step is to attach the one side of the semiconductor chip to the front end surface of the convex portion of the adhesive layer of the supporting substrate to hold the semiconductor chip on the supporting substrate. A semiconductor chip transfer method as claimed in claim 6, wherein the transferred substrate has a convex portion including an adhesive layer on the side of the transferred substrate to which the semiconductor chip is transferred, the front end surface of the convex portion of the transferred substrate has adhesiveness, and when the entire area of the front end surface of the convex portion of the transferred substrate contacts the semiconductor chip, only the area equal to the surface of the semiconductor chip closest to the adhesive layer or the area further inward than the surface of the semiconductor chip closest to the adhesive layer contacts the semiconductor chip.