WO2024154645A1 - Transfer substrate holding device, transfer device, and transfer method - Google Patents

Transfer substrate holding device, transfer device, and transfer method Download PDF

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Publication number
WO2024154645A1
WO2024154645A1 PCT/JP2024/000454 JP2024000454W WO2024154645A1 WO 2024154645 A1 WO2024154645 A1 WO 2024154645A1 JP 2024000454 W JP2024000454 W JP 2024000454W WO 2024154645 A1 WO2024154645 A1 WO 2024154645A1
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Prior art keywords
transfer substrate
transfer
holding
substrate
facing
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PCT/JP2024/000454
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French (fr)
Japanese (ja)
Inventor
浩一 風間
義之 新井
達弥 岡田
敏行 陣田
遥 藤重
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東レエンジニアリング株式会社
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Publication of WO2024154645A1 publication Critical patent/WO2024154645A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present invention relates to a transfer substrate holding device, a transfer device, and a transfer method for transferring an element held on a transfer substrate to a transfer substrate by irradiation with active energy rays.
  • Patent Document 1 discloses an element transfer device that transfers elements using ablation technology.
  • a laser irradiation device is used that has a laser light source that generates a laser beam, a reflection means that reflects the laser beam from the laser light source in a required direction, and a control means that works in conjunction with the reflection means to control the irradiation and non-irradiation of the laser beam, to selectively irradiate a laser beam onto some of the elements arranged in a transfer substrate, causing ablation of the layer that holds the elements.
  • This selective ablation transfers some of the elements onto the transfer substrate.
  • the elements are transferred from the transfer substrate to the transfer substrate by laser lift-off.
  • the width dimension may be a few mm, while the thickness of the element may be a few microns, in order to improve performance.
  • transfer methods other than laser lift-off such as the needle pickup method or slider method, may concentrate the load on one part of the element during transfer, which may cause the element to crack.
  • the laser lift-off method can separate the element from the transfer substrate without damaging it.
  • the transfer substrate is flexible, such as in the form of a tape or film, and the elements held on this transfer substrate are to be transferred to the transfer substrate by laser lift-off, the transfer substrate itself must be held flat and without bending to prevent the spacing between the elements and the transfer substrate from varying from element to element.
  • the transfer substrate it is possible to ensure the flatness of the transfer substrate by attaching the back side of the transfer substrate (the side not holding the element) to a transparent member such as a glass plate, and then irradiating the interface between the transfer substrate and the element with a laser beam that passes through the transparent member to transfer the element to the transferee substrate.
  • the present invention aims to provide a transfer substrate holding device, a transfer device, and a transfer method that can accurately transfer elements held on a flexible transfer substrate to a transfer recipient substrate.
  • the transfer substrate holding device of the present invention is a transfer substrate holding device that holds the back side of a flexible transfer substrate having elements held on its front side in order to irradiate the transfer substrate with active energy rays, and is characterized in that a transparent portion that transmits the active energy rays and comes into contact with the transfer substrate is provided in a portion facing an element holding area, which is an area in the transfer substrate that holds elements, from a transfer substrate facing surface, which is the surface facing the transfer substrate, to the opposite surface of the transfer substrate facing surface, and a suction area, which is an area that generates a suction force to adsorb and hold the transfer substrate, is provided outside the transparent portion on the transfer substrate facing surface side.
  • This transfer substrate holding device makes it possible to hold the transfer substrate so that it conforms to the opposing surface of the transfer substrate without making the transfer substrate sticky, and it is possible to irradiate the interface between the transfer substrate and the element with active energy rays by passing them through the transparent portion.
  • the area in which the transmissive portion is provided encompasses the entire element holding area of the transfer substrate.
  • active energy rays can be irradiated to all elements held on the transfer substrate held by the transfer substrate holding device.
  • the suction region may also be divided into a number of small regions in the in-plane direction of the surface facing the transfer substrate, and the suction force may be switched on and off independently in each of the small regions.
  • the transfer device of the present invention is a transfer device that transfers elements held on a flexible transfer substrate to a transferee substrate by irradiation with active energy rays, and has a transfer substrate holding section that holds the back side of the transfer substrate with elements held on the front side, and an energy irradiation section that irradiates active energy rays through the transfer substrate toward the elements when the transfer substrate and the transferee substrate are opposed to each other with the elements sandwiched between them, peeling the elements from the transfer substrate and moving them to the transferee substrate, and the transfer substrate holding section is provided with a transmission section that transmits the active energy rays from the transfer substrate facing surface, which is the surface facing the transfer substrate, to the opposite surface of the transfer substrate facing surface, and that comes into contact with the transfer substrate, in a portion facing the element holding area, which is an area that holds the elements on the transfer substrate, from the transfer substrate facing surface, which is the surface facing the transfer substrate, to the opposite surface of the transfer substrate facing surface, and
  • This transfer device allows elements held on a flexible transfer substrate to be accurately transferred to a transfer substrate. Specifically, by having a transfer substrate holding section with a transparent section and a suction area, the transfer substrate can be held so as to conform to the opposing surface of the transfer substrate without the need for adhesiveness, and active energy rays can be irradiated to the interface between the transfer substrate and the element by passing through the transparent section.
  • the transfer substrate holding section holds the transfer substrate
  • the area in which the transmissive section is provided may preferably include the entire element holding area of the transfer substrate.
  • the suction region may also be divided into a number of small regions in the in-plane direction of the surface facing the transfer substrate, and the suction force may be switched on and off independently in each of the small regions.
  • the transfer method of the present invention is a transfer method in which an element held on a flexible transfer substrate is transferred to a transferee substrate by irradiation with active energy rays, and includes a transfer substrate holding step in which the back side of the transfer substrate, on which an element is held on the front side, is held by a transfer substrate holding part, and an energy irradiation step in which, in a state in which the transfer substrate and the transferee substrate face each other with the element sandwiched therebetween, active energy rays are irradiated through the transfer substrate toward the element, so that the element is peeled off from the transfer substrate and moved to the transferee substrate, and the transfer substrate holding part is provided with a transmission part that transmits the active energy rays from the transfer substrate facing surface, which is the surface facing the transfer substrate, to the opposite surface of the transfer substrate facing surface, and that comes into contact with the transfer substrate, in a portion facing the element holding area, which is an area in the transfer substrate that holds the element, and
  • This transfer method allows an element held on a flexible transfer substrate to be accurately transferred to a transfer substrate. Specifically, by having a transfer substrate holding section with a transparent section and a suction area, the transfer substrate can be held so as to conform to the opposing surface of the transfer substrate without the need for adhesiveness, and active energy rays can be irradiated to the interface between the transfer substrate and the element by passing through the transparent section.
  • the transfer substrate holding section holds the transfer substrate
  • the area in which the transmissive section is provided may preferably include the entire element holding area of the transfer substrate.
  • the suction area is divided into a plurality of small areas in the in-plane direction of the surface facing the transfer substrate, and the suction force can be switched on and off independently in the plurality of small areas.
  • the timing at which the suction force is switched from off to on in each of the plurality of small areas is differentiated, so that the transfer substrate is adsorbed and held in stages.
  • the transfer substrate holding process may also include a transfer substrate contact process in which the transfer substrate holding section and the transfer substrate are brought close to each other from a state in which the transfer substrate with the front side facing up is above the transfer substrate holding section with the opposing surface of the transfer substrate facing up, and the transfer substrate is placed on the transfer substrate holding section; a transfer substrate adsorption process in which the transfer substrate holding section adsorbs and holds the transfer substrate in the suction region; and an inversion process in which the transfer substrate holding section is inverted upside down so that the opposing surface of the transfer substrate faces downward while adsorbing and holding the transfer substrate.
  • a transfer substrate contact process in which the transfer substrate holding section and the transfer substrate are brought close to each other from a state in which the transfer substrate with the front side facing up is above the transfer substrate holding section with the opposing surface of the transfer substrate facing up, and the transfer substrate is placed on the transfer substrate holding section
  • a transfer substrate adsorption process in which the transfer substrate holding section adsorbs and holds the transfer substrate in the suction
  • the transfer substrate holding process may also include a transfer substrate contact process in which the transfer substrate holding part and the transfer substrate are brought close to each other and brought into contact with each other from a state in which the transfer substrate holding part is located above the transfer substrate with the surface side facing downward and the element held on the surface side facing downward, and a transfer substrate adsorption process in which the transfer substrate holding part adsorbs and holds the transfer substrate in the suction region.
  • a transfer substrate contact process in which the transfer substrate holding part and the transfer substrate are brought close to each other and brought into contact with each other from a state in which the transfer substrate holding part is located above the transfer substrate with the surface side facing downward and the element held on the surface side facing downward
  • a transfer substrate adsorption process in which the transfer substrate holding part adsorbs and holds the transfer substrate in the suction region.
  • the transfer substrate holder can be formed in a small number of steps so that it holds the transfer substrate facing downward without bending.
  • the transfer substrate may be held by a ring member, and the transfer substrate holding step may include a transfer substrate contact step in which the transfer substrate holding part and the transfer substrate are brought close to each other and brought into contact with each other from a state in which the transfer substrate holding part is located above the transfer substrate with the surface facing the transfer substrate facing downward and the ring member placed on a mounting table, and a transfer substrate adsorption step in which the transfer substrate holding part adsorbs and holds the transfer substrate in the suction area.
  • the transfer substrate holder can be formed in a small number of steps so that it holds the transfer substrate facing downward without bending.
  • the transfer substrate holding device, transfer device, and transfer method of the present invention allow elements held on a flexible transfer substrate to be accurately transferred to a transfer substrate.
  • FIG. 2 is a diagram illustrating a transfer device according to an embodiment of the present invention.
  • 1 is a diagram illustrating a transfer substrate holding device in the present embodiment.
  • 1A to 1C are diagrams illustrating a transfer substrate holding step in a transfer method using the transfer apparatus of the present embodiment.
  • 13A to 13C are views illustrating a transfer substrate holding step in another embodiment of the present invention.
  • 13A to 13C are views illustrating a transfer substrate holding step in another embodiment of the present invention.
  • FIG. 1 is a diagram illustrating a conventional transfer method.
  • the transfer device according to one embodiment of the present invention will be described with reference to FIG. 1.
  • the transfer device 10 includes a laser irradiation unit 12 that irradiates laser light 11, a transfer substrate holding unit 13 that holds a transfer substrate 22 and is movable in at least the X-axis and Y-axis directions, a transferred substrate gripping unit 14 that is located below the transfer substrate holding unit 13 and holds a transferred substrate 23 so as to face the transfer substrate 22 with a gap, and a control unit (not shown), and by irradiating the transfer substrate 22 with laser light 11, ablation occurs in the transfer substrate 22 and the element 21 is transferred from the transfer substrate 22 to the transferred substrate 23.
  • the gap between the element 21 held on the transfer substrate 22 and the transferred substrate 23 is about 50 um to 200 um.
  • the laser irradiation unit 12 is an embodiment of the energy irradiation unit in the present invention, and is a device that irradiates laser light 11 such as an excimer laser, which is an active energy ray, and is fixed to the transfer device 10.
  • the laser irradiation unit 12 irradiates spot-shaped laser light 11, and the irradiation position of the laser light 11 in the X-axis direction and the Y-axis direction is controlled via a galvanometer mirror 15 and an f ⁇ lens 16, the angles of which are adjusted by a control unit, and the laser light 11 is selectively irradiated near the elements 21 arranged in plurality on the transfer substrate 22 held by the transfer substrate holding unit 13.
  • the elements 21 are semiconductor chips such as LEDs, and hereinafter are also referred to as chips 21.
  • the transfer substrate 22 is a flexible substrate in the form of a tape, film, or thin plate that holds multiple chips 21, and has a substrate body 22a and a release layer 22b.
  • a dicing tape that adhesively holds a semiconductor wafer when dicing the semiconductor wafer, or a thin glass plate with a thickness of about 0.5 mm corresponds to this transfer substrate 22.
  • the area on this transfer substrate 22 where the chips 21 are held is called the element holding area 22c.
  • the substrate body 22a is a flexible member, such as a tape or film made of resin, that is capable of transmitting at least a portion of the laser light 11.
  • the release layer 22b is an adhesive layer provided on one side of the substrate body 22a, and adhesively holds the chip 21.
  • the side on which the release layer 22b is provided is referred to as the surface of the transfer substrate 22, and the chip 21 is held on this surface side.
  • the release layer 22b has the property of causing ablation when irradiated with the laser light 11, and the occurrence of this ablation urges the chip 21 towards the transfer substrate 23.
  • the transfer substrate holding part 13 is a member that adsorbs and grips the area near the outer periphery of the back side of the transfer substrate 22 (the side that does not hold the chip 21), and is also referred to as the transfer substrate holding device 13 in this description.
  • the transfer substrate holding part 13 the surface that faces the transfer substrate 22 when adsorbing and holding the transfer substrate 22 is referred to as the transfer substrate facing surface 13a.
  • the portion of this transfer substrate facing surface 13a that comes into contact with the element holding region 22c of the transfer substrate 22 is a flat surface, and by placing the transfer substrate 22 so as to conform to this flat surface, the flexible transfer substrate 22 is held flat without bending.
  • the transparent part 13b is provided in an area large enough to encompass the entire element holding area 22c of the transfer substrate 22 when the transfer substrate holding part 13 holds the transfer substrate 22.
  • the entire transfer substrate holding portion 13 is made of glass in this embodiment, only the portion corresponding to the transparent portion 13b is made of a material having optical transparency, and the portions other than the transparent portion 13b may be made of a material having no optical transparency, such as metal.
  • a suction region 17 that generates a suction force is provided so as to surround the transparent portion 13b.
  • porous metal 18 is embedded on the transfer substrate facing surface 13a side so as to surround the transparent portion 13b, and the porous metal 18 is exposed on the transfer substrate facing surface 13a so as to be flush with the flat surface of the transparent portion 13b.
  • the exposed portion of the porous metal 18 corresponds to the suction region 17.
  • the porous metal 18 is connected to a vacuum pump 19 via piping, and when the vacuum pump 19 is operated, a suction force is generated in the suction region 17, which adsorbs the transfer substrate 22.
  • the transfer substrate holding part 13 moves relative to the transferred substrate gripping part 14 at least in the X-axis direction and the Y-axis direction by a movement mechanism (not shown).
  • a control part controls this movement mechanism and adjusts the position of the transfer substrate holding part 13, thereby adjusting the relative position of the chip 21 held on the transfer substrate 22 with respect to the transferred substrate 23.
  • the transfer substrate holding part 13 is attached to the above-mentioned moving mechanism (not shown) via the inversion part 20.
  • the inversion part 20 is a member that rotates the transfer substrate holding part 13 with the horizontal direction as the rotation axis direction, and this inversion part 20 can invert the transfer substrate holding part 13 (transfer substrate facing surface 13a) upside down.
  • the transferred substrate gripping part 14 has a flat upper surface, and during the transfer process of the chip 21, grips the transferred substrate 23 so that the release layer 22b of the transfer substrate 22 and the chip 21 held by the release layer 22b face the transferred surface of the transferred substrate 23.
  • the upper surface of the transferred substrate gripping part 14 has multiple suction holes, and grips the back surface of the transferred substrate 23 (the surface to which the chip 1 is not transferred) by suction force.
  • the transferred substrate 23 has a substrate body 23a and a catch layer 23b.
  • the substrate body 23a is a substrate made of a material such as glass
  • the catch layer 23b is an adhesive layer provided on one side of the substrate body 23a, which adhesively holds the chip 21 biased from the transfer substrate 22.
  • the surface on which the catch layer 23b is provided becomes the transferred surface of the transferred substrate 23.
  • the transferred substrate gripping part 14 may also be provided with a movement mechanism in the X-axis and Y-axis directions.
  • the flexible transfer substrate 22 is adsorbed and held by the transfer substrate holding section 13, so that the transfer substrate 22 can be held so as to conform to the transfer substrate facing surface 13a.
  • the transparent section 13b is a flat surface
  • the transfer substrate 22 is held so as to be flat at least in the portion in contact with the transparent section 13b.
  • the suction area 17 is made of porous metal 18.
  • the transfer substrate 22 is slightly pulled into each small hole of the porous metal 18, so that a slight tension can be applied to the portion of the transfer substrate 22 that faces the transparent portion 13b in particular.
  • the transfer substrate 22 can be held so as to more firmly conform to the transparent portion 13b.
  • Figure 2 shows the transfer substrate holding section of this embodiment, viewed from the direction of arrow AA in Figure 1.
  • the suction area 17 is divided into a plurality of small areas (small areas 17a and 17b in this embodiment) in the in-plane direction of the transfer substrate facing surface 13a (at least one direction in the XY plane in FIG. 2), and each small area is separated from the others.
  • a vacuum pump 19a is connected to small area 17a, and a vacuum pump 19b is connected to small area 17b, and the operation of vacuum pump 19a and vacuum pump 19b are independently controlled by the control unit. This allows the suction force to be switched on and off independently in small area 17a and small area 17b.
  • the timing at which the suction force is switched from off to on in each small region is differentiated, for example, first the suction in small region 17a is turned on, then the suction in small region 17b is turned on. This makes it possible to prevent air that was trapped between the transfer substrate 22 and the transmission section 13b when the transfer substrate 22 was placed from remaining, and allows the transfer substrate 22 to be suction-held more flatly.
  • the transfer method using the transfer device 10 includes a transfer substrate holding step in which the back side of the transfer substrate 22, which has the chip 21 held on its front side, is held, and an energy irradiation step in which, with the transfer substrate 22 and the transferred substrate 23 facing each other with the chip 21 in between, laser light 11 is irradiated through the transfer substrate 22 toward the chip 21, peeling the chip 21 off the transfer substrate 22 and moving it to the transferred substrate 23.
  • the transfer substrate holding part 13 waits with the transfer substrate facing surface 13a facing upward before adsorbing the substrate.
  • the transfer substrate 22 with the release layer 22b on the upper side and the chip 21 held facing upward is placed above the transfer substrate holding part 13.
  • the transfer substrate 22 and the transfer substrate holding part 13 are brought close to each other, and the back surface of the transfer substrate 22 is placed on the transfer substrate facing surface 13a of the transfer substrate holding part 13.
  • this process of bringing the transfer substrate 22 close to the transfer substrate holding part 13 and placing it thereon is called the transfer substrate contact process, and in this embodiment, the transfer substrate 22 and the transfer substrate holding part 13 are brought close to each other by lowering the robot hand holding the transfer substrate 22 toward the transfer substrate holding part 13.
  • the vacuum pump 19 connected to the suction area 17 is then operated, causing the transfer substrate holding unit 13 to adsorb and hold the transfer substrate 22.
  • this is called the transfer substrate adsorption process.
  • the inversion unit 20 operates to invert the transfer substrate holding unit 13 upside down.
  • this is called the inversion process
  • the inversion process when the inversion process is performed, a form is formed in which the underside of the transfer substrate holding unit 13 holds the transfer substrate 22, which holds the chip 21 on its underside, as shown in FIG. 3(c).
  • the transfer substrate contact process, transfer substrate adsorption process, and inversion process are collectively called the transfer substrate holding process. According to the transfer substrate holding process of this embodiment, it is easy to place the transfer substrate 22 on the transfer substrate facing surface 13a.
  • the transfer substrate holding part 13 and the transferred substrate holding part 14 are moved relative to each other to position the chip 21 above the transferred substrate 23 on the transferred substrate holding part 14 with a predetermined distance between them.
  • the energy irradiation process is performed to irradiate the laser light 11 toward the chip 21 through the transparent part 13b of the transfer substrate holding part 13, thereby transferring the chip 21 from the transfer substrate 22 to the transferred substrate 23.
  • the transfer substrate 22 With the release layer 22b on the bottom side and holding the chip 21 facing downward, is placed on a flat surface such as a base plate 24. At this time, the chip 21 is in contact with this flat surface.
  • the transfer substrate holding part 13 is positioned above the transfer substrate 22 on the flat surface with the transfer substrate facing surface 13a facing downward, and the transfer substrate holding part 13 and the transfer substrate 22 are brought close to each other and brought into contact with each other (transfer substrate contact process).
  • the vacuum pump 19 connected to the suction area 17 is activated, causing the transfer substrate holding unit 13 to adsorb and hold the transfer substrate 22 (transfer substrate adsorption process).
  • the transfer substrate contact process and the transfer substrate adsorption process are collectively referred to as the transfer substrate holding process.
  • the transfer substrate holding section 13 that adsorbs and holds the transfer substrate 22 moves away from the base plate 24, forming a form in which the underside of the transfer substrate holding section 13 holds the transfer substrate 22, which holds the chip 21 on its underside, as shown in FIG. 4(c), in the same manner as in the transfer substrate holding process shown in FIG. 3.
  • the transfer substrate holding process of this embodiment allows the transfer substrate holding portion 13 to hold the transfer substrate 22 facing downward without bending, with fewer steps.
  • the outer periphery of the transfer substrate 22 may be held by a rigid ring member 25.
  • the ring member 25 that holds the transfer substrate 22 is first placed on the ring mounting table 26. At this time, the transfer substrate 22 is in a state where the release layer 22b is on the lower side and holds the chip 21 facing downward.
  • the transfer substrate holding part 13 and the transfer substrate 22 are brought closer together and brought into contact (transfer substrate contact process).
  • the transfer substrate holding part 13 further descends after contacting the transfer substrate 22, thereby applying tension to the transfer substrate 22, preventing any air that had entered between the transfer substrate 22 and the transfer substrate facing surface 13a from remaining, and allowing the transfer substrate 22 to be held so as to closely conform to the transfer substrate facing surface 13a.
  • the vacuum pump 19 connected to the suction area 17 is activated, causing the transfer substrate holding unit 13 to adsorb and hold the transfer substrate 22 (transfer substrate adsorption process).
  • the transfer substrate contact process and the transfer substrate adsorption process are collectively referred to as the transfer substrate holding process.
  • the transfer substrate holding part 13 that adsorbs and holds the transfer substrate 22 moves away from the ring mounting table 26, forming a form in which the underside of the transfer substrate holding part 13 holds the transfer substrate 22, which holds the chip 21 on its underside, as shown in FIG. 5(c), in the same manner as in the transfer substrate holding process shown in FIG. 3.
  • the transfer substrate holding process of this embodiment allows the transfer substrate holding portion 13 to hold the transfer substrate 22 facing downward without bending in a few steps.
  • the energy irradiation process may be performed while the ring member 25 is still holding the transfer substrate 22, and the ring member 25 may be removed after the transfer substrate holding portion 13 adsorbs and holds the transfer substrate 22.
  • the above transfer substrate holding device, transfer device, and transfer method make it possible to accurately transfer elements held on a flexible transfer substrate to a transfer substrate.
  • the transfer substrate holding device, transfer device, and transfer method of the present invention are not limited to the above-described forms, and may be of other forms within the scope of the present invention.
  • the area in which the transmissive portion 13b is provided is large enough to encompass the entire element holding area 22c of the transfer substrate 22 when the transfer substrate holding unit 13 holds the transfer substrate 22, and the transmissive portion 13b is provided. This allows the laser light 11 to be irradiated onto all of the chips 21 held on the transfer substrate 22 held by the transfer substrate holding unit 13, but this is not necessarily the case, and some chips 21 may be located outside the transmissive portion 13b.
  • the transfer substrate 22 is divided into the substrate body 22a and the release layer 22b, but this is not limited and they may be integrated.
  • the transfer substrate 23 may also be integrated into the substrate body 23a and the catch layer 23b, rather than being separated.
  • the suction area 17 is provided with porous metal 18, but the suction area 17 may be provided with a groove-shaped or multiple hole-shaped suction mechanism that surrounds the transmission portion 13b. In addition, the suction area 17 does not necessarily have to be provided to completely surround the transmission portion 13b.
  • Transfer device 11 Laser light (active energy ray) 12 Laser irradiation unit 13 Transfer substrate holding unit (transfer substrate holding device) 13a Transfer substrate facing surface 13b Transmission section 14 Transferred substrate gripping section 15 Galvanometer mirror 16 F ⁇ lens 17 Suction section 17a Small section 17b Small section 18 Porous metal 19 Decompression pump 19a Decompression pump 19b Decompression pump 20 Reversal section 21 Chip (element) 21a Bonding surface 22 Transfer substrate 22a Substrate body 22b Release layer 22c Element holding area 23 Transferred substrate 23a Substrate body 23b Catch layer 24 Surface plate 25 Ring member 26 Ring mounting base 91 Transfer substrate holder 92 Transfer substrate 93 Element 94 Wrinkle

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Abstract

The present invention provides a transfer substrate holding device, a transfer device, and a transfer method which make it possible to accurately transfer, to a transfer-receiving substrate, an element held by a flexible transfer substrate. Specifically, provided is a transfer substrate holding device 13 that holds the rear surface side of a flexible transfer substrate 22, which holds an element 21 on the front surface side thereof, in order to irradiate the transfer substrate 22 with active energy rays 11, wherein: at a portion that faces an element holding region 22c, which is a region of the transfer substrate 22 where the element 21 is held, provided is a transmission part 13b that transmits active energy rays 11, from a transfer substrate facing surface 13a which faxes the transfer substrate 22 to a surface on the opposite side from the transfer substrate facing surface 13a, and that makes contact with the transfer substrate 22; and a clamping region 17 for producing a clamping force to clamp and hold the transfer substrate 22 is provided outside the transmission part 13b on the transfer substrate facing surface 13a side.

Description

転写基板保持装置、転写装置、および転写方法Transfer substrate holding device, transfer device, and transfer method
　本発明は、転写基板に保持された素子を活性エネルギー線の照射によって被転写基板へ転写するための転写基板保持装置、転写装置、および転写方法に関する。 The present invention relates to a transfer substrate holding device, a transfer device, and a transfer method for transferring an element held on a transfer substrate to a transfer substrate by irradiation with active energy rays.
　近年、半導体チップはコスト低減のために小型化され、この小型化した半導体チップを高精度に実装するための取組みが行われている。この小型化したチップを高速で実装するにあたり、転写基板に接合されたチップの転写基板との接合面へレーザを照射することによってアブレーションを生じさせ、チップを転写基板から剥離、付勢させて被転写基板へと転写する、いわゆるレーザリフトオフなる手法が採用されている。 In recent years, semiconductor chips have been miniaturized to reduce costs, and efforts are being made to mount these miniaturized semiconductor chips with high precision. To mount these miniaturized chips at high speed, a method known as laser lift-off is used in which a laser is irradiated onto the bonding surface of the chip bonded to the transfer substrate to cause ablation, peeling the chip off from the transfer substrate and transferring it to the transfer substrate by applying a force.
　特許文献１には、アブレーション技術を用いて素子を転写する素子の転写装置が開示されている。この素子の転写装置では、レーザビームを発生させるレーザ光源と、そのレーザ光源からのレーザビームを所要の方向に反射させる反射手段と、その反射手段と連動してレーザビームの照射及び非照射を制御する制御手段とを有するレーザ照射装置を用いて、転写基板上に複数配列された素子の一部に対してレーザビームを選択的に照射し、素子を保持する層のアブレーション（溶発）を発生させる。この選択的なアブレーションによって素子の一部が被転写基板上に転写される。すなわち、レーザリフトオフにより素子が転写基板から被転写基板へ転写される。 Patent Document 1 discloses an element transfer device that transfers elements using ablation technology. In this element transfer device, a laser irradiation device is used that has a laser light source that generates a laser beam, a reflection means that reflects the laser beam from the laser light source in a required direction, and a control means that works in conjunction with the reflection means to control the irradiation and non-irradiation of the laser beam, to selectively irradiate a laser beam onto some of the elements arranged in a transfer substrate, causing ablation of the layer that holds the elements. This selective ablation transfers some of the elements onto the transfer substrate. In other words, the elements are transferred from the transfer substrate to the transfer substrate by laser lift-off.
　特に、次世代パッケージングや次世代パワーデバイスなどでは性能を向上させるために幅寸法が数ｍｍであるのに対し素子の厚みが数ｕｍとなることもある。このような素子を転写基板から被転写基板やボンディングヘッドへ移し替えるにあたり、レーザリフトオフ以外の転写方式、たとえばニードルピックアップ方式やスライダー方式では転写時に素子の一部分に荷重が集中して素子に割れが生じる可能性がある。これに対し、レーザリフトオフ方式では素子にダメージを与えることなく転写基板から素子を分離させることができる。 In particular, in the case of next-generation packaging and next-generation power devices, the width dimension may be a few mm, while the thickness of the element may be a few microns, in order to improve performance. When transferring such elements from a transfer substrate to a transfer substrate or a bonding head, transfer methods other than laser lift-off, such as the needle pickup method or slider method, may concentrate the load on one part of the element during transfer, which may cause the element to crack. In contrast, the laser lift-off method can separate the element from the transfer substrate without damaging it.
特開２００３－７７９４０号公報JP 2003-77940 A
　一方、転写基板がテープ状、フィルム状といった可撓性を有するものであり、この転写基板に保持された素子をレーザリフトオフにより被転写基板へ転写する場合には、素子と被転写基板との間隔が素子ごとにばらつくことを防ぐために、転写基板自体を撓み無く平坦に保持する必要がある。 On the other hand, if the transfer substrate is flexible, such as in the form of a tape or film, and the elements held on this transfer substrate are to be transferred to the transfer substrate by laser lift-off, the transfer substrate itself must be held flat and without bending to prevent the spacing between the elements and the transfer substrate from varying from element to element.
　この場合、たとえばガラス板など透過性を有する透過部材に転写基板の裏面側（素子を保持していない方の面側）を貼り付けることにより転写基板の平坦性を確保し、当該透過部材を透過させて転写基板と素子の界面にレーザビームを照射することによって素子を被転写基板へ転写させることが考え得る。しかしながら、この場合には転写基板の裏面側に粘着性を持たせる工程が必要であるといった問題、そして、図６に示すように透過部材９１に転写基板９２を貼り付けた際に皺９４が生じてしまった場合、被転写基板９５と素子９３との間隔にばらつきが生じたり被転写基板９５に対して素子９３が傾いたりしてしまい、正確に被転写基板９５へ素子９３を転写できなくなるといった問題が生じるおそれがあった。 In this case, it is possible to ensure the flatness of the transfer substrate by attaching the back side of the transfer substrate (the side not holding the element) to a transparent member such as a glass plate, and then irradiating the interface between the transfer substrate and the element with a laser beam that passes through the transparent member to transfer the element to the transferee substrate. However, in this case, there is a problem that a process is required to make the back side of the transfer substrate adhesive, and if wrinkles 94 are generated when the transfer substrate 92 is attached to the transparent member 91 as shown in Figure 6, there is a risk of problems such as variations in the distance between the transferee substrate 95 and the element 93 or the element 93 being tilted relative to the transferee substrate 95, making it impossible to accurately transfer the element 93 to the transferee substrate 95.
　本願発明は、上記問題点を鑑み、可撓性を有する転写基板に保持された素子を正確に被転写基板へ転写することができる転写基板保持装置、転写装置、および転写方法を提供することを目的とする。 In consideration of the above problems, the present invention aims to provide a transfer substrate holding device, a transfer device, and a transfer method that can accurately transfer elements held on a flexible transfer substrate to a transfer recipient substrate.
　上記課題を解決するために本発明の転写基板保持装置は、表面側に素子が保持された可撓性を有する転写基板へ活性エネルギー線を照射するために当該転写基板の裏面側を保持する転写基板保持装置であって、前記転写基板における素子を保持する領域である素子保持領域と対向する部分には、前記転写基板と対向する面である転写基板対向面から当該転写基板対向面の反対面にかけて前記活性エネルギー線を透過させるとともに前記転写基板と接する透過部が設けられ、前記転写基板対向面側における前記透過部の外側には、吸引力を発して前記転写基板を吸着保持する領域である吸引領域が設けられていることを特徴としている。 In order to solve the above problems, the transfer substrate holding device of the present invention is a transfer substrate holding device that holds the back side of a flexible transfer substrate having elements held on its front side in order to irradiate the transfer substrate with active energy rays, and is characterized in that a transparent portion that transmits the active energy rays and comes into contact with the transfer substrate is provided in a portion facing an element holding area, which is an area in the transfer substrate that holds elements, from a transfer substrate facing surface, which is the surface facing the transfer substrate, to the opposite surface of the transfer substrate facing surface, and a suction area, which is an area that generates a suction force to adsorb and hold the transfer substrate, is provided outside the transparent portion on the transfer substrate facing surface side.
　この転写基板保持装置により、転写基板に粘着性を持たせずとも転写基板を転写基板対向面に倣うように保持することができ、透過部を透過させて転写基板と素子の界面に活性エネルギー線を照射することが可能である。 This transfer substrate holding device makes it possible to hold the transfer substrate so that it conforms to the opposing surface of the transfer substrate without making the transfer substrate sticky, and it is possible to irradiate the interface between the transfer substrate and the element with active energy rays by passing them through the transparent portion.
　また、前記転写基板を保持した状態において、前記透過部が設けられた領域が前記転写基板の前記素子保持領域の全体を内包すると良い。 Furthermore, when the transfer substrate is held, it is preferable that the area in which the transmissive portion is provided encompasses the entire element holding area of the transfer substrate.
　こうすることにより、転写基板保持装置が保持した転写基板に保持された全ての素子に活性エネルギー線を照射することができる。 By doing this, active energy rays can be irradiated to all elements held on the transfer substrate held by the transfer substrate holding device.
　また、前記吸引領域は、前記転写基板対向面の面内方向に複数の小領域に分割されており、当該複数の小領域において互いに独立して吸引力のオンオフを切り替えることが可能であっても良い。 The suction region may also be divided into a number of small regions in the in-plane direction of the surface facing the transfer substrate, and the suction force may be switched on and off independently in each of the small regions.
　こうすることにより、転写基板と透過部との間に空気が残存することを防ぎ、転写基板を転写基板対向面にしっかりと倣うように保持することができる。 This prevents air from remaining between the transfer substrate and the transmissive portion, and allows the transfer substrate to be held firmly in contact with the opposing surface of the transfer substrate.
　また、上記課題を解決するために本発明の転写装置は、可撓性を有する転写基板に保持された素子を活性エネルギー線の照射により被転写基板に転写する転写装置であり、表面側に素子が保持された前記転写基板の裏面側を保持する転写基板保持部と、素子を挟んで前記転写基板と前記被転写基板とが対向した状態において前記転写基板を通して素子に向けて活性エネルギー線を照射し、素子を前記転写基板から剥離させて前記被転写基板へ移動させる、エネルギー照射部を有し、前記転写基板保持部は、前記転写基板における素子を保持する領域である素子保持領域と対向する部分には、前記転写基板と対向する面である転写基板対向面から当該転写基板対向面の反対面にかけて前記活性エネルギー線を透過させるとともに前記転写基板と接する透過部が設けられ、前記転写基板対向面側における前記透過部の外側には、吸引力を発して前記転写基板を吸着保持する領域である吸引領域が設けられていることを特徴としている。 In order to solve the above problem, the transfer device of the present invention is a transfer device that transfers elements held on a flexible transfer substrate to a transferee substrate by irradiation with active energy rays, and has a transfer substrate holding section that holds the back side of the transfer substrate with elements held on the front side, and an energy irradiation section that irradiates active energy rays through the transfer substrate toward the elements when the transfer substrate and the transferee substrate are opposed to each other with the elements sandwiched between them, peeling the elements from the transfer substrate and moving them to the transferee substrate, and the transfer substrate holding section is provided with a transmission section that transmits the active energy rays from the transfer substrate facing surface, which is the surface facing the transfer substrate, to the opposite surface of the transfer substrate facing surface, and that comes into contact with the transfer substrate, in a portion facing the element holding area, which is an area that holds the elements on the transfer substrate, from the transfer substrate facing surface, which is the surface facing the transfer substrate, to the opposite surface of the transfer substrate facing surface, and a suction area, which is an area that generates a suction force to adsorb and hold the transfer substrate, is provided outside the transmission section on the transfer substrate facing surface side.
　この転写装置により、可撓性を有する転写基板に保持された素子を正確に被転写基板へ転写することができる。具体的には、透過部と吸引領域を有する転写基板保持部を有することにより、転写基板に粘着性を持たせずとも転写基板を転写基板対向面に倣うように保持することができ、透過部を透過させて転写基板と素子の界面に活性エネルギー線を照射することが可能である。 This transfer device allows elements held on a flexible transfer substrate to be accurately transferred to a transfer substrate. Specifically, by having a transfer substrate holding section with a transparent section and a suction area, the transfer substrate can be held so as to conform to the opposing surface of the transfer substrate without the need for adhesiveness, and active energy rays can be irradiated to the interface between the transfer substrate and the element by passing through the transparent section.
　また、前記転写基板保持部は、前記転写基板を保持した状態において、前記透過部が設けられた領域が前記転写基板の前記素子保持領域の全体を内包すると良い。 Furthermore, when the transfer substrate holding section holds the transfer substrate, the area in which the transmissive section is provided may preferably include the entire element holding area of the transfer substrate.
　こうすることにより、転写基板保持部が保持した転写基板に保持された全ての素子に活性エネルギー線を照射することができる。 By doing this, active energy rays can be irradiated to all elements held on the transfer substrate held by the transfer substrate holding unit.
　また、前記吸引領域は、前記転写基板対向面の面内方向に複数の小領域に分割されており、当該複数の小領域において互いに独立して吸引力のオンオフを切り替えることが可能であっても良い。 The suction region may also be divided into a number of small regions in the in-plane direction of the surface facing the transfer substrate, and the suction force may be switched on and off independently in each of the small regions.
　こうすることにより、転写基板と透過部との間に空気が残存することを防ぎ、転写基板を転写基板対向面にしっかりと倣うように保持することができる。 This prevents air from remaining between the transfer substrate and the transmissive portion, and allows the transfer substrate to be held firmly in contact with the opposing surface of the transfer substrate.
　また、上記課題を解決するために本発明の転写方法は、可撓性を有する転写基板に保持された素子を活性エネルギー線の照射により被転写基板に転写する転写方法であり、表面側に素子が保持された前記転写基板の裏面側を転写基板保持部により保持する転写基板保持工程と、素子を挟んで前記転写基板と前記被転写基板とが対向した状態において前記転写基板を通して素子に向けて活性エネルギー線を照射し、素子を前記転写基板から剥離させて前記被転写基板へ移動させる、エネルギー照射工程を有し、前記転写基板保持部は、前記転写基板における素子を保持する領域である素子保持領域と対向する部分には、前記転写基板と対向する面である転写基板対向面から当該転写基板対向面の反対面にかけて前記活性エネルギー線を透過させるとともに前記転写基板と接する透過部が設けられ、前記転写基板対向面側における前記透過部の外側には、吸引力を発して前記転写基板を吸着保持する領域である吸引領域が設けられていることを特徴としている。 　In order to solve the above problems, the transfer method of the present invention is a transfer method in which an element held on a flexible transfer substrate is transferred to a transferee substrate by irradiation with active energy rays, and includes a transfer substrate holding step in which the back side of the transfer substrate, on which an element is held on the front side, is held by a transfer substrate holding part, and an energy irradiation step in which, in a state in which the transfer substrate and the transferee substrate face each other with the element sandwiched therebetween, active energy rays are irradiated through the transfer substrate toward the element, so that the element is peeled off from the transfer substrate and moved to the transferee substrate, and the transfer substrate holding part is provided with a transmission part that transmits the active energy rays from the transfer substrate facing surface, which is the surface facing the transfer substrate, to the opposite surface of the transfer substrate facing surface, and that comes into contact with the transfer substrate, in a portion facing the element holding area, which is an area in the transfer substrate that holds the element, and a suction area, which is an area that generates a suction force to adsorb and hold the transfer substrate, is provided outside the transmission part on the transfer substrate facing surface side.
　この転写方法により、可撓性を有する転写基板に保持された素子を正確に被転写基板へ転写することができる。具体的には、透過部と吸引領域を有する転写基板保持部を有することにより、転写基板に粘着性を持たせずとも転写基板を転写基板対向面に倣うように保持することができ、透過部を透過させて転写基板と素子の界面に活性エネルギー線を照射することが可能である。 This transfer method allows an element held on a flexible transfer substrate to be accurately transferred to a transfer substrate. Specifically, by having a transfer substrate holding section with a transparent section and a suction area, the transfer substrate can be held so as to conform to the opposing surface of the transfer substrate without the need for adhesiveness, and active energy rays can be irradiated to the interface between the transfer substrate and the element by passing through the transparent section.
　また、前記転写基板保持部は、前記転写基板を保持した状態において、前記透過部が設けられた領域が前記転写基板の前記素子保持領域の全体を内包すると良い。 Furthermore, when the transfer substrate holding section holds the transfer substrate, the area in which the transmissive section is provided may preferably include the entire element holding area of the transfer substrate.
　こうすることにより、転写基板保持部が保持した転写基板に保持された全ての素子に活性エネルギー線を照射することができる。 By doing this, active energy rays can be irradiated to all elements held on the transfer substrate held by the transfer substrate holding unit.
　また、前記吸引領域は、前記転写基板対向面の面内方向に複数の小領域に分割されており、当該複数の小領域において互いに独立して吸引力のオンオフを切り替えることが可能であって、前記転写基板保持工程では各前記複数の小領域において吸引力をオフからオンに切り替えるタイミングに差を持たせ、段階的に前記転写基板を吸着保持すると良い。 Furthermore, the suction area is divided into a plurality of small areas in the in-plane direction of the surface facing the transfer substrate, and the suction force can be switched on and off independently in the plurality of small areas. In the transfer substrate holding process, the timing at which the suction force is switched from off to on in each of the plurality of small areas is differentiated, so that the transfer substrate is adsorbed and held in stages.
　こうすることにより、転写基板と透過部との間に空気が残存することを防ぎ、転写基板を転写基板対向面にしっかりと倣うように保持することができる。 This prevents air from remaining between the transfer substrate and the transmissive portion, and allows the transfer substrate to be held firmly in contact with the opposing surface of the transfer substrate.
　また、前記転写基板保持工程は、前記転写基板対向面が上を向いた状態の前記転写基板保持部に対し前記表面側が上を向いた状態の前記転写基板が上方にある状態から前記転写基板保持部と前記転写基板を接近させ、前記転写基板を前記転写基板保持部に載置させる転写基板接触工程と、前記吸引領域において前記転写基板保持部が前記転写基板を吸着保持する転写基板吸着工程と、前記転写基板を吸着保持した状態で前記転写基板対向面が下向きとなるように前記転写基板保持部が上下反転する反転工程と、を有しても良い。 The transfer substrate holding process may also include a transfer substrate contact process in which the transfer substrate holding section and the transfer substrate are brought close to each other from a state in which the transfer substrate with the front side facing up is above the transfer substrate holding section with the opposing surface of the transfer substrate facing up, and the transfer substrate is placed on the transfer substrate holding section; a transfer substrate adsorption process in which the transfer substrate holding section adsorbs and holds the transfer substrate in the suction region; and an inversion process in which the transfer substrate holding section is inverted upside down so that the opposing surface of the transfer substrate faces downward while adsorbing and holding the transfer substrate.
　こうすることにより、転写基板を転写基板対向面に載置させやすく、かつ、素子の転写時に転写基板保持部が転写基板を下向きに保持することができる。 This makes it easier to place the transfer substrate on the surface facing the transfer substrate, and allows the transfer substrate holding section to hold the transfer substrate facing downwards when transferring elements.
　また、前記転写基板保持工程は、前記表面側が下を向き、前記表面側に保持された素子が平坦面に載置されている状態の前記転写基板に対し前記転写基板対向面が下を向いた状態の前記転写基板保持部が上方にある状態から前記転写基板保持部と前記転写基板を接近させ接触させる転写基板接触工程と、前記吸引領域において前記転写基板保持部が前記転写基板を吸着保持する転写基板吸着工程と、を有しても良い。 The transfer substrate holding process may also include a transfer substrate contact process in which the transfer substrate holding part and the transfer substrate are brought close to each other and brought into contact with each other from a state in which the transfer substrate holding part is located above the transfer substrate with the surface side facing downward and the element held on the surface side facing downward, and a transfer substrate adsorption process in which the transfer substrate holding part adsorbs and holds the transfer substrate in the suction region.
　こうすることにより、転写基板保持部が転写基板を下向きに撓み無く保持する形態を少ない工程で形成することができる。 By doing this, the transfer substrate holder can be formed in a small number of steps so that it holds the transfer substrate facing downward without bending.
　また、前記転写基板は、リング部材により把持されており、前記転写基板保持工程は、前記表面側が下を向き、前記リング部材が載置台に載置されている状態の前記転写基板に対し前記転写基板対向面が下を向いた状態の前記転写基板保持部が上方にある状態から前記転写基板保持部と前記転写基板を接近させ接触させる転写基板接触工程と、前記吸引領域において前記転写基板保持部が前記転写基板を吸着保持する転写基板吸着工程と、を有しても良い。 The transfer substrate may be held by a ring member, and the transfer substrate holding step may include a transfer substrate contact step in which the transfer substrate holding part and the transfer substrate are brought close to each other and brought into contact with each other from a state in which the transfer substrate holding part is located above the transfer substrate with the surface facing the transfer substrate facing downward and the ring member placed on a mounting table, and a transfer substrate adsorption step in which the transfer substrate holding part adsorbs and holds the transfer substrate in the suction area.
　こうすることにより、転写基板保持部が転写基板を下向きに撓み無く保持する形態を少ない工程で形成することができる。 By doing this, the transfer substrate holder can be formed in a small number of steps so that it holds the transfer substrate facing downward without bending.
　本発明の転写基板保持装置、転写装置、および転写方法により、可撓性を有する転写基板に保持された素子を正確に被転写基板へ転写することができる。 The transfer substrate holding device, transfer device, and transfer method of the present invention allow elements held on a flexible transfer substrate to be accurately transferred to a transfer substrate.
本発明の一実施形態における転写装置を説明する図である。FIG. 2 is a diagram illustrating a transfer device according to an embodiment of the present invention. 本実施形態における転写基板保持装置を説明する図である。1 is a diagram illustrating a transfer substrate holding device in the present embodiment. 本実施形態の転写装置を用いた転写方法における転写基板保持工程を説明する図である。1A to 1C are diagrams illustrating a transfer substrate holding step in a transfer method using the transfer apparatus of the present embodiment. 本発明の他の実施形態における転写基板保持工程を説明する図である。13A to 13C are views illustrating a transfer substrate holding step in another embodiment of the present invention. 本発明の他の実施形態における転写基板保持工程を説明する図である。13A to 13C are views illustrating a transfer substrate holding step in another embodiment of the present invention. 従来の転写方法を説明する図である。FIG. 1 is a diagram illustrating a conventional transfer method.
　本発明の一実施形態における転写装置について、図１を参照して説明する。 The transfer device according to one embodiment of the present invention will be described with reference to FIG. 1.
　転写装置１０は、レーザ光１１を照射するレーザ照射部１２、転写基板２２を保持して少なくともＸ軸方向、Ｙ軸方向に移動可能な転写基板保持部１３、転写基板保持部１３の下側にあって転写基板２２と隙間を有して対向するように被転写基板２３を保持する被転写基板把持部１４、および図示しない制御部を備えており、転写基板２２にレーザ光１１を照射することによって転写基板２２でアブレーションを生じさせ、転写基板２２から被転写基板２３へ素子２１を転写する。このとき、転写基板２２に保持された素子２１と被転写基板２３との隙間は、５０ｕｍ～２００ｕｍ程度である。 The transfer device 10 includes a laser irradiation unit 12 that irradiates laser light 11, a transfer substrate holding unit 13 that holds a transfer substrate 22 and is movable in at least the X-axis and Y-axis directions, a transferred substrate gripping unit 14 that is located below the transfer substrate holding unit 13 and holds a transferred substrate 23 so as to face the transfer substrate 22 with a gap, and a control unit (not shown), and by irradiating the transfer substrate 22 with laser light 11, ablation occurs in the transfer substrate 22 and the element 21 is transferred from the transfer substrate 22 to the transferred substrate 23. At this time, the gap between the element 21 held on the transfer substrate 22 and the transferred substrate 23 is about 50 um to 200 um.
　レーザ照射部１２は、本発明におけるエネルギー照射部の一実施形態であって、活性エネルギー線であるエキシマレーザなどのレーザ光１１を照射する装置であり、転写装置１０に固定して設けられる。本実施形態においては、レーザ照射部１２はスポット状のレーザ光１１を照射し、レーザ光１１は、制御部により角度が調節されるガルバノミラー１５およびｆθレンズ１６を介してＸ軸方向およびＹ軸方向の照射位置が制御され、転写基板保持部１３に保持された転写基板２２に複数配置されている素子２１の近傍に選択的に照射する。レーザ光１１が転写基板２２を通して素子２１近傍に入射することによって、転写基板２２と素子２１との間で活性エネルギー（光エネルギー）の付与によるアブレーションが生じ、このアブレーションによって素子２１は付勢され、転写基板２２から被転写基板２３へ素子２１が転写される。なお、本説明では素子２１はＬＥＤなどの半導体チップであり、以降、チップ２１とも呼ぶ。 The laser irradiation unit 12 is an embodiment of the energy irradiation unit in the present invention, and is a device that irradiates laser light 11 such as an excimer laser, which is an active energy ray, and is fixed to the transfer device 10. In this embodiment, the laser irradiation unit 12 irradiates spot-shaped laser light 11, and the irradiation position of the laser light 11 in the X-axis direction and the Y-axis direction is controlled via a galvanometer mirror 15 and an fθ lens 16, the angles of which are adjusted by a control unit, and the laser light 11 is selectively irradiated near the elements 21 arranged in plurality on the transfer substrate 22 held by the transfer substrate holding unit 13. When the laser light 11 is incident on the vicinity of the elements 21 through the transfer substrate 22, ablation occurs between the transfer substrate 22 and the elements 21 due to the application of active energy (light energy), and the elements 21 are energized by this ablation, and the elements 21 are transferred from the transfer substrate 22 to the transfer substrate 23. In this description, the elements 21 are semiconductor chips such as LEDs, and hereinafter are also referred to as chips 21.
　転写基板２２は、複数のチップ２１を保持するテープ状、フィルム状、もしくは薄板状といった可撓性を有する基板であり、基板本体２２ａとリリース層２２ｂとを有する。たとえば半導体ウェーハのダイシングの際に半導体ウェーハを粘着保持するダイシングテープや厚さ０．５ｍｍ程度のガラス薄板がこの転写基板２２に相当する。また、この転写基板２２上においてチップ２１が保持されている領域を素子保持領域２２ｃと呼ぶ。 The transfer substrate 22 is a flexible substrate in the form of a tape, film, or thin plate that holds multiple chips 21, and has a substrate body 22a and a release layer 22b. For example, a dicing tape that adhesively holds a semiconductor wafer when dicing the semiconductor wafer, or a thin glass plate with a thickness of about 0.5 mm corresponds to this transfer substrate 22. The area on this transfer substrate 22 where the chips 21 are held is called the element holding area 22c.
　基板本体２２ａは、レーザ光１１の少なくとも一部を透過することが可能なたとえば樹脂からなるテープ状、フィルム状といった可撓性を有する部材である。リリース層２２ｂは、基板本体２２ａの片面側に設けられた粘着性を有する層であり、チップ２１を粘着保持する。このリリース層２２ｂが設けられた方の面を本説明では転写基板２２の表面と呼び、この表面側にチップ２１が保持される。また、リリース層２２ｂはレーザ光１１の照射によってアブレーションが生じる性質を有し、このアブレーションの発生によってチップ２１が被転写基板２３に向かって付勢される。 The substrate body 22a is a flexible member, such as a tape or film made of resin, that is capable of transmitting at least a portion of the laser light 11. The release layer 22b is an adhesive layer provided on one side of the substrate body 22a, and adhesively holds the chip 21. In this description, the side on which the release layer 22b is provided is referred to as the surface of the transfer substrate 22, and the chip 21 is held on this surface side. In addition, the release layer 22b has the property of causing ablation when irradiated with the laser light 11, and the occurrence of this ablation urges the chip 21 towards the transfer substrate 23.
　転写基板保持部１３は、転写基板２２の裏面側（チップ２１を保持していない方の面）の外周部近傍を吸着把持する部材であり、本説明では転写基板保持装置１３とも呼ぶ。なお、転写基板保持部１３において、転写基板２２の吸着保持時に転写基板２２と対向する面を転写基板対向面１３ａと呼ぶ。この転写基板対向面１３ａにおける転写基板２２の素子保持領域２２ｃと接する部分は平坦面であり、この平坦面に倣うように転写基板２２が載置されることにより、可撓性を有する転写基板２２は撓み無く平坦となるように保持される。 The transfer substrate holding part 13 is a member that adsorbs and grips the area near the outer periphery of the back side of the transfer substrate 22 (the side that does not hold the chip 21), and is also referred to as the transfer substrate holding device 13 in this description. Note that in the transfer substrate holding part 13, the surface that faces the transfer substrate 22 when adsorbing and holding the transfer substrate 22 is referred to as the transfer substrate facing surface 13a. The portion of this transfer substrate facing surface 13a that comes into contact with the element holding region 22c of the transfer substrate 22 is a flat surface, and by placing the transfer substrate 22 so as to conform to this flat surface, the flexible transfer substrate 22 is held flat without bending.
　また、転写基板保持部１３において上記素子保持領域２２ｃと対向する部分の少なくとも一部はガラスなどの光透過性を有する部材により形成されており、本説明ではこの部分を透過部１３ｂと呼ぶ。また、本実施形態では、転写基板保持部１３が転写基板２２を保持した状態において透過部１３ｂが設けられた領域が転写基板２２の素子保持領域２２ｃの全体を内包する程度の大きさで、透過部１３ｂが設けられている。 In addition, at least a part of the portion of the transfer substrate holding part 13 that faces the element holding area 22c is made of a light-transmitting material such as glass, and in this description, this portion is referred to as the transparent part 13b. In this embodiment, the transparent part 13b is provided in an area large enough to encompass the entire element holding area 22c of the transfer substrate 22 when the transfer substrate holding part 13 holds the transfer substrate 22.
　この透過部１３ｂでは、転写基板保持部１３の転写基板対向面１３ａと反対側の面から入射した光が透過部１３ｂを通って転写基板対向面１３ａへと抜ける。そのため、レーザ照射部１２から発せられたレーザ光１１を、転写基板保持部１３に保持された転写基板２２のリリース層２２ｂに、この透過部１３ｂを介して当てることができる。なお、本実施形態では転写基板保持部１３全体がガラスにより構成されているが、この透過部１３ｂに相当する部分のみ光透過性を有する部材で構成され、透過部１３ｂ以外の部分は金属などの光透過性を有しない部材で構成されていても良い。 In this transparent portion 13b, light incident from the surface of the transfer substrate holding portion 13 opposite the transfer substrate facing surface 13a passes through the transparent portion 13b and passes through to the transfer substrate facing surface 13a. Therefore, the laser light 11 emitted from the laser irradiation portion 12 can be directed through the transparent portion 13b to the release layer 22b of the transfer substrate 22 held by the transfer substrate holding portion 13. Note that, although the entire transfer substrate holding portion 13 is made of glass in this embodiment, only the portion corresponding to the transparent portion 13b is made of a material having optical transparency, and the portions other than the transparent portion 13b may be made of a material having no optical transparency, such as metal.
　また、転写基板対向面１３ａ側の透過部１３ｂの外側には、吸引力を発する領域である吸引領域１７が透過部１３ｂを囲むように設けられている。本実施形態では透過部１３ｂを囲むように多孔質金属１８が転写基板対向面１３ａ側に埋め込まれており、透過部１３ｂの平坦面と面一となるように転写基板対向面１３ａ上で多孔質金属１８が露出している。この多孔質金属１８が露出している部分が吸引領域１７に相当する。この多孔質金属１８が配管を介して減圧ポンプ１９と接続されており、減圧ポンプ１９が作動することにより吸引領域１７において吸引力が生じ、転写基板２２を吸着する。 In addition, outside the transparent portion 13b on the transfer substrate facing surface 13a side, a suction region 17 that generates a suction force is provided so as to surround the transparent portion 13b. In this embodiment, porous metal 18 is embedded on the transfer substrate facing surface 13a side so as to surround the transparent portion 13b, and the porous metal 18 is exposed on the transfer substrate facing surface 13a so as to be flush with the flat surface of the transparent portion 13b. The exposed portion of the porous metal 18 corresponds to the suction region 17. The porous metal 18 is connected to a vacuum pump 19 via piping, and when the vacuum pump 19 is operated, a suction force is generated in the suction region 17, which adsorbs the transfer substrate 22.
　また、転写基板保持部１３は図示しない移動機構により、少なくともＸ軸方向、Ｙ軸方向に関して被転写基板把持部１４に対して相対移動する。図示しない制御部がこの移動機構を制御し、転写基板保持部１３の位置を調節することにより、転写基板２２に保持されたチップ２１の被転写基板２３に対する相対位置を調節することができる。 In addition, the transfer substrate holding part 13 moves relative to the transferred substrate gripping part 14 at least in the X-axis direction and the Y-axis direction by a movement mechanism (not shown). A control part (not shown) controls this movement mechanism and adjusts the position of the transfer substrate holding part 13, thereby adjusting the relative position of the chip 21 held on the transfer substrate 22 with respect to the transferred substrate 23.
　また、本実施形態では転写基板保持部１３は反転部２０を介して上記の図示しない移動機構に取り付けられている。反転部２０は、水平方向を回転軸方向として転写基板保持部１３を回転させる部材であり、この反転部２０により転写基板保持部１３（転写基板対向面１３ａ）を上下反転させることができる。 In addition, in this embodiment, the transfer substrate holding part 13 is attached to the above-mentioned moving mechanism (not shown) via the inversion part 20. The inversion part 20 is a member that rotates the transfer substrate holding part 13 with the horizontal direction as the rotation axis direction, and this inversion part 20 can invert the transfer substrate holding part 13 (transfer substrate facing surface 13a) upside down.
　被転写基板把持部１４は、上面に平坦面を有し、チップ２１の転写工程中、転写基板２２のリリース層２２ｂおよびリリース層２２ｂが保持するチップ２１と被転写基板２３の被転写面が対向するように被転写基板２３を把持する。この被転写基板把持部１４の上面には複数の吸引孔が設けられており、吸引力により被転写基板２３の裏面（チップ１が転写されない方の面）を把持する。 The transferred substrate gripping part 14 has a flat upper surface, and during the transfer process of the chip 21, grips the transferred substrate 23 so that the release layer 22b of the transfer substrate 22 and the chip 21 held by the release layer 22b face the transferred surface of the transferred substrate 23. The upper surface of the transferred substrate gripping part 14 has multiple suction holes, and grips the back surface of the transferred substrate 23 (the surface to which the chip 1 is not transferred) by suction force.
　本実施形態における被転写基板２３は、基板本体２３ａとキャッチ層２３ｂとを有する。基板本体２３ａはガラスなどを材料とする基板であり、キャッチ層２３ｂは基板本体２３ａの片面側に設けられた粘着性を有する層であり、転写基板２２から付勢されたチップ２１を粘着保持する。すなわち、キャッチ層２３ｂが設けられた方の面が、被転写基板２３の被転写面となる。 In this embodiment, the transferred substrate 23 has a substrate body 23a and a catch layer 23b. The substrate body 23a is a substrate made of a material such as glass, and the catch layer 23b is an adhesive layer provided on one side of the substrate body 23a, which adhesively holds the chip 21 biased from the transfer substrate 22. In other words, the surface on which the catch layer 23b is provided becomes the transferred surface of the transferred substrate 23.
　なお、本実施形態では、転写基板保持部１３のみがＸ軸方向およびＹ軸方向に移動することにより転写基板保持部１３と被転写基板把持部１４とが相対移動する形態をとっているが、被転写基板２３の寸法が大きく、レーザ光１１の照射範囲の直下に被転写基板２３の全面が位置できない場合には、被転写基板把持部１４にもＸ軸方向およびＹ軸方向の移動機構が設けられていても良い。 In this embodiment, only the transfer substrate holding part 13 moves in the X-axis and Y-axis directions, thereby causing relative movement between the transfer substrate holding part 13 and the transferred substrate gripping part 14. However, if the dimensions of the transferred substrate 23 are large and the entire surface of the transferred substrate 23 cannot be positioned directly under the irradiation range of the laser light 11, the transferred substrate gripping part 14 may also be provided with a movement mechanism in the X-axis and Y-axis directions.
　以上の構成の転写装置１０において、転写基板保持部１３により可撓性を有する転写基板２２を吸着保持することにより、転写基板２２を転写基板対向面１３ａに倣うように保持することができる。特に、本実施形態では透過部１３ｂは平坦面となっているため、少なくとも透過部１３ｂと接する部分において、転写基板２２は平坦となるように保持される。このように転写基板２２が平坦となるように保持されることにより、転写基板２２が保持する複数のチップ２１にわたってチップ２１と被転写基板２３との距離を均一にすることができ、また、水平に載置された被転写基板２３に対して転写基板２２上の各チップ２１の傾きも水平にすることができるため、チップ２１を正確に被転写基板２３へ転写することができる。 In the transfer device 10 configured as above, the flexible transfer substrate 22 is adsorbed and held by the transfer substrate holding section 13, so that the transfer substrate 22 can be held so as to conform to the transfer substrate facing surface 13a. In particular, in this embodiment, since the transparent section 13b is a flat surface, the transfer substrate 22 is held so as to be flat at least in the portion in contact with the transparent section 13b. By holding the transfer substrate 22 so as to be flat in this manner, the distance between the chips 21 and the transferred substrate 23 can be made uniform across the multiple chips 21 held by the transfer substrate 22, and the inclination of each chip 21 on the transfer substrate 22 can also be made horizontal with respect to the transferred substrate 23 placed horizontally, so that the chips 21 can be accurately transferred to the transferred substrate 23.
　また、本実施形態では吸引領域１７は多孔質金属１８により構成されている。この吸引領域１７により転写基板２２を吸引することにより、多孔質金属１８の各小孔に転写基板２２がわずかに引き込まれるため、転写基板２２の特に透過部１３ｂと対向する部分にわずかにテンションをかけることができる。そのため、よりしっかりと透過部１３ｂに倣うように転写基板２２を保持することができる。 In addition, in this embodiment, the suction area 17 is made of porous metal 18. By sucking the transfer substrate 22 with this suction area 17, the transfer substrate 22 is slightly pulled into each small hole of the porous metal 18, so that a slight tension can be applied to the portion of the transfer substrate 22 that faces the transparent portion 13b in particular. As a result, the transfer substrate 22 can be held so as to more firmly conform to the transparent portion 13b.
　次に、本実施形態の転写基板保持部を説明する図であって図１におけるＡＡ矢視図を図２に示す。 Next, Figure 2 shows the transfer substrate holding section of this embodiment, viewed from the direction of arrow AA in Figure 1.
　本実施形態では、吸引領域１７は転写基板対向面１３ａの面内方向（図２におけるＸＹ平面内の少なくとも一方向）に複数の小領域（本実施形態では小領域１７ａと小領域１７ｂ）に分割されており、各小領域間は縁切りされている。小領域１７ａには減圧ポンプ１９ａが、小領域１７ｂには減圧ポンプ１９ｂがそれぞれ接続されており、制御部により減圧ポンプ１９ａと減圧ポンプ１９ｂの動作が独立して制御される。これにより、小領域１７ａと小領域１７ｂとにおいて互いに独立して吸引力のオンオフを切り替えることができる。 In this embodiment, the suction area 17 is divided into a plurality of small areas (small areas 17a and 17b in this embodiment) in the in-plane direction of the transfer substrate facing surface 13a (at least one direction in the XY plane in FIG. 2), and each small area is separated from the others. A vacuum pump 19a is connected to small area 17a, and a vacuum pump 19b is connected to small area 17b, and the operation of vacuum pump 19a and vacuum pump 19b are independently controlled by the control unit. This allows the suction force to be switched on and off independently in small area 17a and small area 17b.
　このように吸引領域１７が複数の小領域に分割された転写基板保持部１３によって転写基板２２の裏面側を吸着保持する転写基板保持工程において、たとえば最初に小領域１７ａの吸引がオンとなり、次に小領域１７ｂの吸引がオンとなるというように各小領域において吸引力をオフからオンに切り替えるタイミングに差を持たせる。こうすることにより、転写基板２２の載置時に転写基板２２と透過部１３ｂとの間に入り込んでいた空気が残存することを防ぐことができ、より平坦に転写基板２２を吸着保持することができる。 In this manner, in the transfer substrate holding process in which the back side of the transfer substrate 22 is suction-held by the transfer substrate holding section 13 in which the suction region 17 is divided into a number of small regions, the timing at which the suction force is switched from off to on in each small region is differentiated, for example, first the suction in small region 17a is turned on, then the suction in small region 17b is turned on. This makes it possible to prevent air that was trapped between the transfer substrate 22 and the transmission section 13b when the transfer substrate 22 was placed from remaining, and allows the transfer substrate 22 to be suction-held more flatly.
　次に、本実施形態の転写装置を用いた転写方法における転写基板保持工程について、図３を用いて説明する。 Next, the transfer substrate holding process in the transfer method using the transfer device of this embodiment will be explained with reference to FIG. 3.
　転写装置１０を用いた転写方法は、表面側にチップ２１が保持された転写基板２２の裏面側を保持する転写基板保持工程と、チップ２１を挟んで転写基板２２と被転写基板２３とが対向した状態において転写基板２２を通してチップ２１に向けてレーザ光１１を照射し、チップ２１を転写基板２２から剥離させて被転写基板２３へ移動させる、エネルギー照射工程を有している。 The transfer method using the transfer device 10 includes a transfer substrate holding step in which the back side of the transfer substrate 22, which has the chip 21 held on its front side, is held, and an energy irradiation step in which, with the transfer substrate 22 and the transferred substrate 23 facing each other with the chip 21 in between, laser light 11 is irradiated through the transfer substrate 22 toward the chip 21, peeling the chip 21 off the transfer substrate 22 and moving it to the transferred substrate 23.
　本実施形態の転写基板保持工程では、まず図３（ａ）に示すように基板吸着前の転写基板保持部１３は転写基板対向面１３ａが上を向いた状態で待機している。次に、リリース層２２ｂが上側にあってチップ２１が上向きに保持されている転写基板２２を転写基板保持部１３の上方に配置する。 In the transfer substrate holding step of this embodiment, first, as shown in FIG. 3(a), the transfer substrate holding part 13 waits with the transfer substrate facing surface 13a facing upward before adsorbing the substrate. Next, the transfer substrate 22 with the release layer 22b on the upper side and the chip 21 held facing upward is placed above the transfer substrate holding part 13.
　そして、転写基板２２と転写基板保持部１３とを接近させ、転写基板２２の裏面を転写基板保持部１３の転写基板対向面１３ａに載置させる。本説明ではこのように転写基板２２を転写基板保持部１３に接近、載置させる工程を転写基板接触工程と呼び、本実施形態では転写基板２２を把持したロボットハンドを転写基板保持部１３に向かって下降させることにより転写基板２２と転写基板保持部１３とを接近させている。 Then, the transfer substrate 22 and the transfer substrate holding part 13 are brought close to each other, and the back surface of the transfer substrate 22 is placed on the transfer substrate facing surface 13a of the transfer substrate holding part 13. In this description, this process of bringing the transfer substrate 22 close to the transfer substrate holding part 13 and placing it thereon is called the transfer substrate contact process, and in this embodiment, the transfer substrate 22 and the transfer substrate holding part 13 are brought close to each other by lowering the robot hand holding the transfer substrate 22 toward the transfer substrate holding part 13.
　転写基板２２が転写基板保持部１３に載置された後、次に吸引領域１７に接続された減圧ポンプ１９が作動することにより、転写基板保持部１３が転写基板２２を吸着保持する。本説明では、これを転写基板吸着工程と呼ぶ。 After the transfer substrate 22 is placed on the transfer substrate holding unit 13, the vacuum pump 19 connected to the suction area 17 is then operated, causing the transfer substrate holding unit 13 to adsorb and hold the transfer substrate 22. In this description, this is called the transfer substrate adsorption process.
　次に、図３（ｂ）に示すように反転部２０が動作して転写基板保持部１３が上下反転する。本説明ではこれを反転工程と呼び、反転工程が実施されると、図３（ｃ）に示すように下面側でチップ２１を保持している転写基板２２を転写基板保持部１３の下面側が保持する形態を形成される。本実施形態では、転写基板接触工程、転写基板吸着工程、反転工程を合わせて転写基板保持工程と呼ぶ。本実施形態の転写基板保持工程によれば、転写基板２２を転写基板対向面１３ａに載置させることが容易である。 Next, as shown in FIG. 3(b), the inversion unit 20 operates to invert the transfer substrate holding unit 13 upside down. In this description, this is called the inversion process, and when the inversion process is performed, a form is formed in which the underside of the transfer substrate holding unit 13 holds the transfer substrate 22, which holds the chip 21 on its underside, as shown in FIG. 3(c). In this embodiment, the transfer substrate contact process, transfer substrate adsorption process, and inversion process are collectively called the transfer substrate holding process. According to the transfer substrate holding process of this embodiment, it is easy to place the transfer substrate 22 on the transfer substrate facing surface 13a.
　上記の転写基板保持工程を経て、下面側でチップ２１を保持している転写基板２２を転写基板保持部１３の下面側が保持する形態が形成された後は、転写基板保持部１３と被転写基板保持部１４とを相対移動させて被転写基板保持部１４上の被転写基板２３の上方に所定の間隔を設けてチップ２１を位置させる。これにより、チップ２１を挟んで転写基板２２と被転写基板２３とが対向する形態が形成される。その後、エネルギー照射工程により転写基板保持部１３の透過部１３ｂを透過させてレーザ光１１をチップ２１に向けて照射することにより、チップ２１を転写基板２２から被転写基板２３へ転写することができる。 After the transfer substrate holding process described above has been completed, and the transfer substrate 22, which holds the chip 21 on its underside, is held by the underside of the transfer substrate holding part 13, the transfer substrate holding part 13 and the transferred substrate holding part 14 are moved relative to each other to position the chip 21 above the transferred substrate 23 on the transferred substrate holding part 14 with a predetermined distance between them. This forms a configuration in which the transfer substrate 22 and the transferred substrate 23 face each other with the chip 21 in between. Thereafter, the energy irradiation process is performed to irradiate the laser light 11 toward the chip 21 through the transparent part 13b of the transfer substrate holding part 13, thereby transferring the chip 21 from the transfer substrate 22 to the transferred substrate 23.
　次に、本発明の他の実施形態における転写基板保持工程を、図４を用いて説明する。 Next, the transfer substrate holding process in another embodiment of the present invention will be described with reference to FIG. 4.
　本実施形態の転写基板保持工程では、図４（ａ）に示すようにまずリリース層２２ｂが下側にあってチップ２１を下向きに保持している転写基板２２が定盤２４などの平坦面上に載置されている。このとき、この平坦面にはチップ２１が接触している。 In the transfer substrate holding step of this embodiment, as shown in FIG. 4(a), first, the transfer substrate 22, with the release layer 22b on the bottom side and holding the chip 21 facing downward, is placed on a flat surface such as a base plate 24. At this time, the chip 21 is in contact with this flat surface.
　次に、平坦面上の転写基板２２に対し転写基板対向面１３ａが下を向いた状態の転写基板保持部１３が上方にある状態から、転写基板保持部１３と転写基板２２とを接近させ、接触させる（転写基板接触工程）。 Next, the transfer substrate holding part 13 is positioned above the transfer substrate 22 on the flat surface with the transfer substrate facing surface 13a facing downward, and the transfer substrate holding part 13 and the transfer substrate 22 are brought close to each other and brought into contact with each other (transfer substrate contact process).
　次に、吸引領域１７に接続された減圧ポンプ１９が作動することにより、転写基板保持部１３が転写基板２２を吸着保持する（転写基板吸着工程）。 Next, the vacuum pump 19 connected to the suction area 17 is activated, causing the transfer substrate holding unit 13 to adsorb and hold the transfer substrate 22 (transfer substrate adsorption process).
　本実施形態では、これら転写基板接触工程と転写基板吸着工程とを合わせて転写基板保持工程と呼ぶ。この転写基板保持工程を経た後、図４（ｂ）に示すように転写基板２２を吸着保持した転写基板保持部１３が定盤２４から離間することによって、図３に示した転写基板保持工程と同様に、図４（ｃ）に示すように下面側でチップ２１を保持している転写基板２２を転写基板保持部１３の下面側が保持する形態が形成される。 In this embodiment, the transfer substrate contact process and the transfer substrate adsorption process are collectively referred to as the transfer substrate holding process. After this transfer substrate holding process, as shown in FIG. 4(b), the transfer substrate holding section 13 that adsorbs and holds the transfer substrate 22 moves away from the base plate 24, forming a form in which the underside of the transfer substrate holding section 13 holds the transfer substrate 22, which holds the chip 21 on its underside, as shown in FIG. 4(c), in the same manner as in the transfer substrate holding process shown in FIG. 3.
　本実施形態の転写基板保持工程によれば、転写基板保持部１３が転写基板２２を下向きに撓み無く保持する形態を少ない工程で形成することができる。 The transfer substrate holding process of this embodiment allows the transfer substrate holding portion 13 to hold the transfer substrate 22 facing downward without bending, with fewer steps.
　次に、本発明のさらに他の実施形態における転写基板保持工程を、図５を用いて説明する。 Next, the transfer substrate holding process in yet another embodiment of the present invention will be described with reference to FIG. 5.
　転写基板２２がダイシングテープであって、チップ２１がダイシングテープ上でダイシングされた半導体ウェーハである場合、この転写基板２２の外周部は剛性を有するリング部材２５に把持されている場合がある。この場合において、本実施形態の転写基板保持工程では、図５（ａ）に示すようにまず転写基板２２を把持するリング部材２５がリング載置台２６上に載置されている。このとき、転写基板２２は、リリース層２２ｂが下側にあってチップ２１を下向きに保持している状態である。 When the transfer substrate 22 is a dicing tape and the chip 21 is a semiconductor wafer diced on the dicing tape, the outer periphery of the transfer substrate 22 may be held by a rigid ring member 25. In this case, in the transfer substrate holding step of this embodiment, as shown in FIG. 5(a), the ring member 25 that holds the transfer substrate 22 is first placed on the ring mounting table 26. At this time, the transfer substrate 22 is in a state where the release layer 22b is on the lower side and holds the chip 21 facing downward.
　次に、転写基板２２に対し転写基板対向面１３ａが下を向いた状態の転写基板保持部１３が上方にある状態から、転写基板保持部１３と転写基板２２とを接近させ、接触させる（転写基板接触工程）。このとき、転写基板保持部１３が転写基板２２と接触した後さらに下降することによって、転写基板２２にテンションをかけることができるため、転写基板２２と転写基板対向面１３ａとの間に入り込んでいた空気が残存することを防ぎ、転写基板２２を転写基板対向面１３ａにしっかりと倣うように保持することができる。 Next, from a state in which the transfer substrate holding part 13 is above the transfer substrate 22 with the transfer substrate facing surface 13a facing downward, the transfer substrate holding part 13 and the transfer substrate 22 are brought closer together and brought into contact (transfer substrate contact process). At this time, the transfer substrate holding part 13 further descends after contacting the transfer substrate 22, thereby applying tension to the transfer substrate 22, preventing any air that had entered between the transfer substrate 22 and the transfer substrate facing surface 13a from remaining, and allowing the transfer substrate 22 to be held so as to closely conform to the transfer substrate facing surface 13a.
　次に、吸引領域１７に接続された減圧ポンプ１９が作動することにより、転写基板保持部１３が転写基板２２を吸着保持する（転写基板吸着工程）。 Next, the vacuum pump 19 connected to the suction area 17 is activated, causing the transfer substrate holding unit 13 to adsorb and hold the transfer substrate 22 (transfer substrate adsorption process).
　本実施形態では、これら転写基板接触工程と転写基板吸着工程とを合わせて転写基板保持工程と呼ぶ。この転写基板保持工程を経た後、図５（ｂ）に示すように転写基板２２を吸着保持した転写基板保持部１３がリング載置台２６から離間することによって、図３に示した転写基板保持工程と同様に、図５（ｃ）に示すように下面側でチップ２１を保持している転写基板２２を転写基板保持部１３の下面側が保持する形態が形成される。 In this embodiment, the transfer substrate contact process and the transfer substrate adsorption process are collectively referred to as the transfer substrate holding process. After this transfer substrate holding process, as shown in FIG. 5(b), the transfer substrate holding part 13 that adsorbs and holds the transfer substrate 22 moves away from the ring mounting table 26, forming a form in which the underside of the transfer substrate holding part 13 holds the transfer substrate 22, which holds the chip 21 on its underside, as shown in FIG. 5(c), in the same manner as in the transfer substrate holding process shown in FIG. 3.
　本実施形態の転写基板保持工程によれば、転写基板保持部１３が転写基板２２を下向きに撓み無く保持する形態を少ない工程で形成することができる。なお、本実施形態では、リング部材２５が転写基板２２を把持した形態を維持したままエネルギー照射工程を実施しても良く、また、転写基板保持部１３が転写基板２２を吸着保持した後にリング部材２５が取り外されても良い。 The transfer substrate holding process of this embodiment allows the transfer substrate holding portion 13 to hold the transfer substrate 22 facing downward without bending in a few steps. Note that in this embodiment, the energy irradiation process may be performed while the ring member 25 is still holding the transfer substrate 22, and the ring member 25 may be removed after the transfer substrate holding portion 13 adsorbs and holds the transfer substrate 22.
　以上の転写基板保持装置、転写装置、および転写方法により、可撓性を有する転写基板に保持された素子を正確に被転写基板へ転写することが可能である。 The above transfer substrate holding device, transfer device, and transfer method make it possible to accurately transfer elements held on a flexible transfer substrate to a transfer substrate.
　ここで、本発明の転写基板保持装置、転写装置、および転写方法は、以上で説明した形態に限らず本発明の範囲内において他の形態のものであってもよい。たとえば、上記の説明では転写基板保持部１３が転写基板２２を保持した状態において透過部１３ｂが設けられた領域が転写基板２２の素子保持領域２２ｃの全体を内包する程度の大きさで、透過部１３ｂが設けられている。これにより転写基板保持部１３が保持した転写基板２２に保持された全てのチップ２１にレーザ光１１を照射することができるが、必ずしもそうである必要は無く、一部のチップ２１が透過部１３ｂの外側に位置していても良い。 The transfer substrate holding device, transfer device, and transfer method of the present invention are not limited to the above-described forms, and may be of other forms within the scope of the present invention. For example, in the above description, the area in which the transmissive portion 13b is provided is large enough to encompass the entire element holding area 22c of the transfer substrate 22 when the transfer substrate holding unit 13 holds the transfer substrate 22, and the transmissive portion 13b is provided. This allows the laser light 11 to be irradiated onto all of the chips 21 held on the transfer substrate 22 held by the transfer substrate holding unit 13, but this is not necessarily the case, and some chips 21 may be located outside the transmissive portion 13b.
　また、上記の説明では転写基板２２は基板本体２２ａとリリース層２２ｂとが分かれているが、これに限らず一体となっていても良い。また、被転写基板２３に関しても基板本体２３ａとキャッチ層２３ｂとに分かれずに一体となっていても良い。 In the above explanation, the transfer substrate 22 is divided into the substrate body 22a and the release layer 22b, but this is not limited and they may be integrated. In addition, the transfer substrate 23 may also be integrated into the substrate body 23a and the catch layer 23b, rather than being separated.
　また、上記の説明では吸引領域１７には多孔質金属１８が設けられているが、それに限らずたとえば透過部１３ｂを囲むように設けられた溝形状もしくは複数の穴形状の吸引機構であっても良い。また、必ずしも透過部１３ｂを完全に囲むように吸引領域１７が設けられていなくても構わない。 In the above description, the suction area 17 is provided with porous metal 18, but the suction area 17 may be provided with a groove-shaped or multiple hole-shaped suction mechanism that surrounds the transmission portion 13b. In addition, the suction area 17 does not necessarily have to be provided to completely surround the transmission portion 13b.
　１０　転写装置
　１１　レーザ光（活性エネルギー線）
　１２　レーザ照射部
　１３　転写基板保持部（転写基板保持装置）
　１３ａ　転写基板対向面
　１３ｂ　透過部
　１４　被転写基板把持部
　１５　ガルバノミラー
　１６　Ｆθレンズ
　１７　吸引領域
　１７ａ　小領域
　１７ｂ　小領域
　１８　多孔質金属
　１９　減圧ポンプ
　１９ａ　減圧ポンプ
　１９ｂ　減圧ポンプ
　２０　反転部
　２１　チップ（素子）
　２１ａ　接合面
　２２　転写基板
　２２ａ　基板本体
　２２ｂ　リリース層
　２２ｃ　素子保持領域
　２３　被転写基板
　２３ａ　基板本体
　２３ｂ　キャッチ層
　２４　定盤
　２５　リング部材
　２６　リング載置台
　９１　転写基板保持体
　９２　転写基板
　９３　素子
　９４　皺 10 Transfer device 11 Laser light (active energy ray)
12 Laser irradiation unit 13 Transfer substrate holding unit (transfer substrate holding device)
13a Transfer substrate facing surface 13b Transmission section 14 Transferred substrate gripping section 15 Galvanometer mirror 16 Fθ lens 17 Suction section 17a Small section 17b Small section 18 Porous metal 19 Decompression pump 19a Decompression pump 19b Decompression pump 20 Reversal section 21 Chip (element)
21a Bonding surface 22 Transfer substrate 22a Substrate body 22b Release layer 22c Element holding area 23 Transferred substrate 23a Substrate body 23b Catch layer 24 Surface plate 25 Ring member 26 Ring mounting base 91 Transfer substrate holder 92 Transfer substrate 93 Element 94 Wrinkle

Claims (12)

  1. 　表面側に素子が保持された可撓性を有する転写基板へ活性エネルギー線を照射するために当該転写基板の裏面側を保持する転写基板保持装置であって、
    　前記転写基板における素子を保持する領域である素子保持領域と対向する部分には、前記転写基板と対向する面である転写基板対向面から当該転写基板対向面の反対面にかけて前記活性エネルギー線を透過させるとともに前記転写基板と接する透過部が設けられ、
    　前記転写基板対向面側における前記透過部の外側には、吸引力を発して前記転写基板を吸着保持する領域である吸引領域が設けられていることを特徴とする、転写基板保持装置。     A transfer substrate holding device that holds a back side of a flexible transfer substrate on a front side of which an element is held, in order to irradiate the transfer substrate with active energy rays, comprising:
    a transmission part that transmits the active energy rays from a transfer substrate facing surface that faces the transfer substrate to a surface opposite the transfer substrate facing surface, the transmission part being in contact with the transfer substrate, in a portion facing an element holding region that is a region for holding an element in the transfer substrate;
    The transfer substrate holding device is characterized in that a suction region that generates a suction force to suction and hold the transfer substrate is provided outside the transmission section on the side facing the transfer substrate.
  2. 　前記転写基板を保持した状態において、前記透過部が設けられた領域が前記転写基板の前記素子保持領域の全体を内包することを特徴とする、請求項１に記載の転写基板保持装置。 The transfer substrate holding device according to claim 1, characterized in that, when the transfer substrate is held, the area in which the transmissive portion is provided encompasses the entire element holding area of the transfer substrate.
  3. 　前記吸引領域は、前記転写基板対向面の面内方向に複数の小領域に分割されており、当該複数の小領域において互いに独立して吸引力のオンオフを切り替えることが可能であることを特徴とする、請求項１もしくは２に記載の転写基板保持装置。 The transfer substrate holding device according to claim 1 or 2, characterized in that the suction area is divided into a plurality of small areas in the in-plane direction of the transfer substrate facing surface, and the suction force can be switched on and off in the plurality of small areas independently of each other.
  4. 　可撓性を有する転写基板に保持された素子を活性エネルギー線の照射により被転写基板に転写する転写装置であり、
    　表面側に素子が保持された前記転写基板の裏面側を保持する転写基板保持部と、
    　素子を挟んで前記転写基板と前記被転写基板とが対向した状態において前記転写基板を通して素子に向けて活性エネルギー線を照射し、素子を前記転写基板から剥離させて前記被転写基板へ移動させる、エネルギー照射部を有し、
    　前記転写基板保持部は、前記転写基板における素子を保持する領域である素子保持領域と対向する部分には、前記転写基板と対向する面である転写基板対向面から当該転写基板対向面の反対面にかけて前記活性エネルギー線を透過させるとともに前記転写基板と接する透過部が設けられ、前記転写基板対向面側における前記透過部の外側には、吸引力を発して前記転写基板を吸着保持する領域である吸引領域が設けられていることを特徴とする転写装置。     A transfer device that transfers an element held on a flexible transfer substrate to a transfer substrate by irradiation with active energy rays,
    a transfer substrate holding section that holds a back surface side of the transfer substrate having an element held on a front surface side thereof;
    an energy irradiation unit that irradiates an active energy ray through the transfer substrate toward the element in a state in which the transfer substrate and the transferee substrate face each other with an element sandwiched therebetween, thereby peeling the element from the transfer substrate and moving it to the transferee substrate;
    The transfer substrate holding section has a transmission section in a portion facing an element holding area, which is an area of the transfer substrate that holds an element, that transmits the active energy rays from a transfer substrate facing surface, which is a surface facing the transfer substrate, to an opposite surface of the transfer substrate facing surface, and the transmission section is in contact with the transfer substrate, and a suction area, which is an area that generates a suction force to adsorb and hold the transfer substrate, is provided outside the transmission section on the transfer substrate facing surface side.
  5. 　前記転写基板保持部は、前記転写基板を保持した状態において、前記透過部が設けられた領域が前記転写基板の前記素子保持領域の全体を内包することを特徴とする、請求項４に記載の転写装置。 The transfer device according to claim 4, characterized in that when the transfer substrate holding section holds the transfer substrate, the area in which the transmissive section is provided encompasses the entire element holding area of the transfer substrate.
  6. 　前記吸引領域は、前記転写基板対向面の面内方向に複数の小領域に分割されており、当該複数の小領域において互いに独立して吸引力のオンオフを切り替えることが可能であることを特徴とする、請求項４もしくは５に記載の転写装置。 The transfer device according to claim 4 or 5, characterized in that the suction area is divided into a plurality of small areas in the in-plane direction of the surface facing the transfer substrate, and the suction force can be switched on and off in the plurality of small areas independently of each other.
  7. 　可撓性を有する転写基板に保持された素子を活性エネルギー線の照射により被転写基板に転写する転写方法であり、
    　表面側に素子が保持された前記転写基板の裏面側を転写基板保持部により保持する転写基板保持工程と、
    　素子を挟んで前記転写基板と前記被転写基板とが対向した状態において前記転写基板を通して素子に向けて活性エネルギー線を照射し、素子を前記転写基板から剥離させて前記被転写基板へ移動させる、エネルギー照射工程を有し、
    　前記転写基板保持部は、前記転写基板における素子を保持する領域である素子保持領域と対向する部分には、前記転写基板と対向する面である転写基板対向面から当該転写基板対向面の反対面にかけて前記活性エネルギー線を透過させるとともに前記転写基板と接する透過部が設けられ、前記転写基板対向面側における前記透過部の外側には、吸引力を発して前記転写基板を吸着保持する領域である吸引領域が設けられていることを特徴とする転写方法。     A transfer method in which an element held on a flexible transfer substrate is transferred to a transfer substrate by irradiation with active energy rays,
    a transfer substrate holding step of holding a back surface side of the transfer substrate having an element held on a front surface side thereof by a transfer substrate holding part;
    an energy irradiation step of irradiating an element through the transfer substrate with active energy rays in a state in which the transfer substrate and the transferee substrate face each other with an element sandwiched therebetween, thereby peeling the element from the transfer substrate and moving it to the transferee substrate;
    a transfer substrate holding portion having a transmission portion that transmits the active energy rays from a transfer substrate facing surface, which is a surface facing the transfer substrate, to a surface opposite the transfer substrate facing surface, and that contacts the transfer substrate, in a portion facing an element holding region, which is a region that holds an element on the transfer substrate; and a suction region, which is a region that generates a suction force to adsorb and hold the transfer substrate, is provided outside the transmission portion on the transfer substrate facing surface side.
  8. 　前記転写基板保持部は、前記転写基板を保持した状態において、前記透過部が設けられた領域が前記転写基板の前記素子保持領域の全体を内包することを特徴とする、請求項７に記載の転写方法。 The transfer method according to claim 7, characterized in that, when the transfer substrate holding part holds the transfer substrate, the area in which the transmissive part is provided encompasses the entire element holding area of the transfer substrate.
  9. 　前記吸引領域は、前記転写基板対向面の面内方向に複数の小領域に分割されており、当該複数の小領域において互いに独立して吸引力のオンオフを切り替えることが可能であって、前記転写基板保持工程では各前記複数の小領域において吸引力をオフからオンに切り替えるタイミングに差を持たせ、段階的に前記転写基板を吸着保持することを特徴とする、請求項７に記載の転写方法。 The transfer method according to claim 7, characterized in that the suction area is divided into a plurality of small areas in the in-plane direction of the surface facing the transfer substrate, and the suction force can be switched on and off independently in the plurality of small areas, and in the transfer substrate holding step, the timing at which the suction force is switched from off to on is differentiated in each of the plurality of small areas, thereby suctioning and holding the transfer substrate in stages.
  10. 　前記転写基板保持工程は、
    　前記転写基板対向面が上を向いた状態の前記転写基板保持部に対し前記表面側が上を向いた状態の前記転写基板が上方にある状態から前記転写基板保持部と前記転写基板を接近させ、前記転写基板を前記転写基板保持部に載置させる転写基板接触工程と、
    　前記吸引領域において前記転写基板保持部が前記転写基板を吸着保持する転写基板吸着工程と、
    　前記転写基板を吸着保持した状態で前記転写基板対向面が下向きとなるように前記転写基板保持部が上下反転する反転工程と、
    を有することを特徴とする、請求項７から９のいずれかに記載の転写方法。     The transfer substrate holding step includes:
    a transfer substrate contacting step of bringing the transfer substrate holding part and the transfer substrate, with the front surface side facing upward, closer to each other from a state in which the transfer substrate is located above the transfer substrate holding part, with the transfer substrate facing surface facing upward, and placing the transfer substrate on the transfer substrate holding part;
    a transfer substrate adsorption step in which the transfer substrate holding part adsorbs and holds the transfer substrate in the suction region;
    an inversion step of inverting the transfer substrate holding unit upside down so that the surface facing the transfer substrate faces downward while the transfer substrate is attracted and held by the transfer substrate holding unit;
    The method for transferring according to any one of claims 7 to 9, comprising:
  11. 　前記転写基板保持工程は、
    　前記表面側が下を向き、前記表面側に保持された素子が平坦面に載置されている状態の前記転写基板に対し前記転写基板対向面が下を向いた状態の前記転写基板保持部が上方にある状態から前記転写基板保持部と前記転写基板を接近させ接触させる転写基板接触工程と、
    　前記吸引領域において前記転写基板保持部が前記転写基板を吸着保持する転写基板吸着工程と、
    を有することを特徴とする、請求項７から９のいずれかに記載の転写方法。     The transfer substrate holding step includes:
    a transfer substrate contacting step of bringing the transfer substrate holding part and the transfer substrate into contact with each other from a state in which the transfer substrate holding part is located above the transfer substrate in a state in which the transfer substrate facing surface faces downward and the element held on the front surface is placed on a flat surface;
    a transfer substrate adsorption step in which the transfer substrate holding part adsorbs and holds the transfer substrate in the suction region;
    The method for transferring according to any one of claims 7 to 9, comprising:
  12. 　前記転写基板は、リング部材により把持されており、
    　前記転写基板保持工程は、
    　前記表面側が下を向き、前記リング部材が載置台に載置されている状態の前記転写基板に対し前記転写基板対向面が下を向いた状態の前記転写基板保持部が上方にある状態から前記転写基板保持部と前記転写基板を接近させ接触させる転写基板接触工程と、
    　前記吸引領域において前記転写基板保持部が前記転写基板を吸着保持する転写基板吸着工程と、
    を有することを特徴とする、請求項７から９のいずれかに記載の転写方法。     The transfer substrate is held by a ring member,
    The transfer substrate holding step includes:
    a transfer substrate contacting step of bringing the transfer substrate holding part and the transfer substrate into contact with each other from a state in which the transfer substrate holding part is located above the transfer substrate in a state in which the transfer substrate facing surface faces downward and the ring member is placed on a mounting table;
    a transfer substrate adsorption step in which the transfer substrate holding part adsorbs and holds the transfer substrate in the suction region;
    The method for transferring according to any one of claims 7 to 9, comprising:
PCT/JP2024/000454 2023-01-16 2024-01-11 Transfer substrate holding device, transfer device, and transfer method WO2024154645A1 (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282690A (en) * 2002-03-25 2003-10-03 Toto Ltd Electrostatic chuck
JP2022521498A (en) * 2019-02-15 2022-04-08 キューリック・アンド・ソファ・ネザーランズ・ベーフェー Dynamic release tape for assembling individual components

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282690A (en) * 2002-03-25 2003-10-03 Toto Ltd Electrostatic chuck
JP2022521498A (en) * 2019-02-15 2022-04-08 キューリック・アンド・ソファ・ネザーランズ・ベーフェー Dynamic release tape for assembling individual components

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