TW202105585A - Semiconductor chip supporting substrate, transfer apparatus, and transfer method - Google Patents

Abstract

Proposed are a semiconductor chip supporting substrate, a transfer apparatus, and a transfer method that enable high-precision transfer of semiconductor chips when the semiconductor chips are to be transferred from a supporting substrate to a transfer destination substrate by using a laser lift-off method. Specifically, this semiconductor chip supporting substrate has an adhesive layer on one surface, and holds semiconductor chips through the adhesive layer. When a laser beam is emitted toward the semiconductor chips from a side opposite to the side at which the semiconductor chips are held, the semiconductor-chip held state is released, and the semiconductor chips are biased. The surface, of the supporting substrate, which comes into contact with the semiconductor chips has projections formed of the adhesive layer. The projections each have a tacky leading end surface, and when the entire area of the leading end surface of the projection comes into contact with the corresponding semiconductor chip, the area comes into contact with a surface, of a semiconductor chip, closest to the adhesive layer such that the area is equivalent to the surface or the area falls within the inner side of the surface.

Description

Supporting substrate of semiconductor wafer, transfer device and transfer method

The present invention relates to a mounting method and mounting device for mounting semiconductor chips with high precision and stability.

The miniaturization of semiconductor wafers has been promoted due to cost reduction, and research has been conducted to mount miniaturized semiconductor wafers with high precision. Especially for displays, semiconductor chips of 50 μm×50 μm or less called micro LEDs (Luminescent Diodes) have been developed, and micro LEDs are required to be mounted with a precision of several μm and at a high speed.

Patent Document 1 describes a technique for high-precision transfer and mounting of LED chips by eliminating the influence of air resistance during transfer by a transfer method. The transfer method includes: a step of arranging a substrate to be transferred, which is Under a vacuum environment, the substrate to be transferred is arranged on the surface of the LED chip held on one side of the transfer substrate on the opposite side with a gap; and the transfer step is performed by irradiating the transfer substrate with thunder The light is emitted to separate the LED chip from the transfer substrate, and is given kinetic energy to the transfer substrate to be transferred to the transfer substrate. Prior art literature Patent literature

Patent Document 1: Japanese Patent Laid-Open No. 2018-60993

[The problem to be solved by the invention]

Among the support substrates holding semiconductor chips, for example, the support substrate 101 shown in FIG. 5(A) has an adhesive layer 103 containing an adhesive with a uniform thickness on the surface of the support substrate 101 that holds the semiconductor chip 6. In the bonded state of the semiconductor chip 6 held by the support substrate 101 with the adhesive layer 103 and the adhesive layer 103, for example, there is the possibility of bonding the semiconductor chip 6 to the adhesive layer 103 provided on the substrate 102 When the semiconductor chip 6 is pressed against the adhesive layer 103, the adhesive layer 103 is deformed, and the adhesive layer 103 will also wrap around to the side of the semiconductor chip. FIG. 5(A) shows a situation where the adhesive layer 103 wraps around to the side 8a on the left side of the semiconductor chip 6.

With the adhesive layer 103 rewinding to the side surface 8a of the semiconductor wafer 6, by the method described in Patent Document 1, that is, for the substrate 9 to be transferred facing the supporting substrate 101 with a gap in a vacuum environment, When using the laser lift-off method to transfer the semiconductor wafer 6 held on the supporting substrate 101 to the substrate 9 to be transferred, the adhesive layer 103 that wraps around to the side surface 8a of the semiconductor wafer 6 is affected, as shown in FIG. 5(B) Shown, between the upper surface 7 of the semiconductor chip 6 and the adhesive layer 103, that is, between the upper surface 7 and each side surface 8 of the semiconductor chip 6, or between the side surface 8a of the semiconductor chip 6 and the other side surfaces 8, each part of the semiconductor chip 6 The timing at which the self-adhesive layer 103 leaves is different. Therefore, there is a possibility that, as shown in FIG. 5(C), the posture of the semiconductor wafer 6 is distorted when kinetic energy is applied from the support substrate 101 to the substrate 9 to be transferred by the laser lift-off method. As shown in FIG. 5(D), it adversely affects the accuracy of transferring the semiconductor wafer 6 to the substrate 9 to be transferred.

In view of the above-mentioned problems, the object of the present invention is to provide a support substrate, a transfer device and a semiconductor wafer that can transfer the semiconductor wafer with high precision when the semiconductor wafer is transferred from the support substrate to the substrate to be transferred using the laser lift-off method Transfer method. [Technical means to solve the problem]

In order to solve the above-mentioned problems, the supporting substrate of the present invention is characterized in that it is a supporting substrate of a semiconductor chip with an adhesive layer on one side, and the semiconductor chip is held by the adhesive layer, and the semiconductor chip is held by the side opposite to the side where the semiconductor chip is held. The semiconductor chip is irradiated with laser light to release the holding state of the semiconductor chip and impart kinetic energy to the semiconductor chip; and the surface on the side in contact with the semiconductor chip has a convex portion including the adhesive layer, and the convex portion has an adhesive on the front end surface When the entire area of the front end surface of the protrusion is in contact with the semiconductor chip, it is only in the area equivalent to the surface of the semiconductor chip closest to the adhesive layer or the surface of the semiconductor chip closest to the adhesive layer The inner region is in contact with the above-mentioned semiconductor wafer.

Since the laser lift can be carried out without the rewinding of the adhesive layer on the side of the semiconductor chip, it is not easy to produce inconsistencies in the timing of the semiconductor chip leaving the adhesive layer within the contact range of the semiconductor chip and the adhesive layer, and the semiconductor chip will fall to the surface. The posture of the transfer substrate is stable, so the transfer can be performed with high precision.

In addition, it is also possible to use a support substrate of a semiconductor chip having the following characteristics, that is, when the entire area of the front end surface of the convex portion is in contact with the semiconductor chip, only the surface of the semiconductor chip that is closest to the adhesive layer is included. The center or the center of gravity is in contact with the semiconductor chip in the inner side of the surface of the semiconductor chip closest to the adhesive layer.

By forming the area in contact with the adhesive layer of the semiconductor chip into a smaller area including the center or center of gravity of the semiconductor chip, the smaller contact area makes the timing of the semiconductor chip away from the adhesive layer less likely to be inconsistent. In addition, Since the contact area includes the center or the center of gravity, the posture of the semiconductor wafer falling on the second support substrate is more stable, so that the transfer can be performed with high accuracy.

In addition, it is also possible to use a semiconductor wafer support substrate having the characteristic that the front end surface of the convex portion is circular.

By forming the area in contact with the adhesive layer of the semiconductor chip into a circular area, the entire front end surface can be irradiated with laser light efficiently.

The transfer device of the present invention is characterized in that it uses laser light to transfer a semiconductor wafer, and has: a support substrate that holds one surface of the semiconductor wafer; a support substrate holding portion that holds the support substrate; and a laser light irradiation portion , Which irradiates the semiconductor wafer with laser light; and a transferred substrate holding portion that holds the transferred substrate to which the semiconductor wafer is transferred; and the support substrate has an adhesive layer on its surface holding the semiconductor wafer The convex portion, the convex portion has adhesiveness on the front end surface, and the entire area of the front end surface of the convex portion when in contact with the semiconductor chip is only in the same area as the surface of the semiconductor chip closest to the adhesive layer or The area on the inner side of the semiconductor wafer closest to the adhesive layer is in contact with the semiconductor wafer, and the surface of the semiconductor wafer held on the support substrate opposite to the support substrate side and the transfer substrate The surface on the side on which the semiconductor wafer is transferred is spaced to face each other. In a state where the substrate to be transferred is held by the substrate holding portion to be transferred, the support substrate is removed from the laser light irradiating portion. The side opposite to the side where the semiconductor chip is held is irradiated with laser light to the semiconductor chip to release the held state of the semiconductor chip, and the semiconductor chip is provided with kinetic energy due to the side of the semiconductor chip when viewed from the adhesive layer. The semiconductor wafer is transferred to the substrate to be transferred.

By using the transfer device of the present invention, the laser lift can be carried out without the rewinding of the adhesive layer on the side of the semiconductor chip. Therefore, it is not easy to cause the semiconductor chip to leave the adhesive layer within the contact range of the semiconductor chip and the adhesive layer. The timing is not consistent, and the posture of the semiconductor wafer falling to the substrate to be transferred is stable, so the transfer can be performed with high precision.

Furthermore, in the transfer device of the present invention, the transfer device may be characterized in that the substrate to be transferred has a convex portion including an adhesive layer on the surface on the side to which the semiconductor wafer is transferred, and the convex portion of the substrate to be transferred The portion has adhesiveness on the front end surface. When the entire area of the front end surface of the convex portion of the substrate to be transferred is in contact with the semiconductor wafer, only the area equivalent to the surface of the semiconductor wafer closest to the adhesive layer or A region on the inner side of the surface of the semiconductor chip closest to the adhesive layer is in contact with the semiconductor chip.

By using a substrate to be transferred that has an adhesive layer that does not wrap around to the side surface of the semiconductor wafer as the support substrate, even if the substrate to be transferred is used as a support substrate and then transferred to other substrates to be transferred or mounting substrates , Can also transfer with high precision.

The transfer method of the present invention is characterized in that it is a transfer method that uses laser light to transfer a semiconductor wafer, and includes: a semiconductor wafer holding step in which an adhesive layer of a support substrate holds one side of the semiconductor wafer; and transfer The step is to provide a space on the surface of the semiconductor wafer held by the adhesive layer of the support substrate on the side opposite to the support substrate side and the surface of the substrate to be transferred on the side where the semiconductor wafer is transferred. The substrate to be transferred is arranged at an opposing position, and the semiconductor wafer is released from the holding state of the semiconductor wafer by the support substrate by irradiating the semiconductor wafer with laser light from the side opposite to the side on which the semiconductor wafer is held of the support substrate, And by imparting kinetic energy to the semiconductor wafer to the substrate to be transferred, the semiconductor wafer is transferred to the substrate to be transferred; and the supporting substrate is characterized in that the surface on the side that holds the semiconductor wafer includes the adhesive The convex part of the layer, the convex part has adhesiveness on the front end surface, and the entire area of the front end surface of the convex part when in contact with the semiconductor chip is only in the same area as the surface of the semiconductor chip closest to the adhesive layer Or a region on the inner side of the semiconductor chip closest to the adhesive layer is in contact with the semiconductor chip; and the semiconductor chip holding step is to attach the semiconductor to the front end surface of the convex portion of the adhesive layer of the support substrate The semiconductor wafer is held by the support substrate on the one side of the wafer.

Since the laser lift is performed in the state where there is no rewinding of the adhesive layer on the side of the semiconductor chip, it is not easy to produce inconsistencies in the timing of the semiconductor chip leaving the adhesive layer within the contact area of the semiconductor chip and the adhesive layer, so the semiconductor chip is turned and dropped. The posture of the printed circuit board is stable, so it can transfer with high precision.

In addition, the transfer method of the present invention may also be characterized in that the substrate to be transferred has a convex portion including an adhesive layer on the surface of the substrate to be transferred on the side where the semiconductor wafer is transferred, and the substrate to be transferred The front end surface of the convex portion has adhesiveness, and the entire area of the front end surface of the convex portion of the substrate to be transferred, when in contact with the semiconductor wafer, is only equivalent to the surface of the semiconductor wafer closest to the adhesive layer A region or a region on the inner side of the surface of the semiconductor chip closest to the adhesive layer is in contact with the semiconductor chip.

By using a substrate to be transferred that has an adhesive layer in a shape that does not wrap around the side surface of the semiconductor wafer as the support substrate, even if it is transferred to another substrate to be transferred or a mounting substrate, the transfer can be performed with high precision. [Effects of Invention]

By using the semiconductor wafer support substrate, transfer device and transfer method of the present invention, when the semiconductor wafer is transferred from the support substrate to the substrate to be transferred using the laser lift-off method, the adhesion layer of the support substrate can be prevented. Disturbance of the attitude of the semiconductor wafer when the semiconductor wafer is given kinetic energy to the substrate to be transferred caused by the winding to the side surface of the semiconductor wafer, so that the semiconductor wafer can be transferred with high precision.

The embodiments of the semiconductor wafer support substrate, transfer device, and transfer method of the present invention will be described using figures. Example 1

The embodiment of the first embodiment of the supporting substrate for the semiconductor wafer of the present invention is shown in FIG. 1. FIG. 1(A) is a plan view of the supporting substrate 1 of the semiconductor chip of the embodiment 1, and FIG. 1(B) is a view viewed in the direction of arrow a in FIG. 1(A). The supporting substrate 1 has, for example _{, a flat plate that contains a material such as SiO 2} or sapphire that allows laser light to pass through, that is, a substrate 2, and has adhesive properties such as polyimide, polysiloxane, and dimethylpolysiloxane (PDMS). Adhesive layer of the material 3.

In this embodiment, the adhesive layer 3 is, for example, polyimide or polysiloxane containing a photosensitive material, and has the property of decomposing to generate gas components by being irradiated with laser light. The adhesive layer 3 has the function of making the laser light irradiating part (not shown) of the laser light pass through the substrate 2 from the substrate 2 side of the support substrate 1 and face the semiconductor chip held on the support substrate 1 by contacting the adhesive layer 3 6 During irradiation, the polymer of the adhesive layer 3 is decomposed and gasified, thereby releasing the holding state of the semiconductor wafer 6 by the support substrate 1 and imparting kinetic energy to the semiconductor wafer 6. With the adhesive layer 3 having such a function, the semiconductor chip 6 held on the support substrate 1 can be transferred by the laser lift-off method.

The adhesive layer 3 is disposed on one surface of the substrate 2, and a plurality of convex portions 4 in the shape of convex portions are formed on the one surface of the substrate 2. As shown in FIG. 1(B), the supporting substrate 1 of this embodiment is not provided with an adhesive layer 3 on the substrate 2 except for the protrusions 4. Such an adhesive layer 3 can be used, for example, after the adhesive constituting the adhesive layer 3 is coated on the substrate 2 with a uniform thickness on the entire surface using a slit coater or the like, and then the convex-removing part 4 can be removed by photolithography or the like. The adhesive layer 3 other than that is formed, and the pattern of the adhesive layer 3 may be formed on the substrate 2 by an inkjet method to form the protrusions 4, or the adhesive layer 3 may be formed by other methods.

FIG. 2(A) shows a view of the support substrate 1 holding the semiconductor wafer 6 when viewed from the same direction as the direction of arrow a in FIG. 1(A). 3 is a view viewed in the direction of arrow b in FIG. 2(A), showing the range where the front end surface 5 of the support substrate 1 is in contact with one semiconductor wafer 6. 2(A) and the hatched portion of FIG. 3, the entire area of the front end surface 5 of each convex portion 4 when in contact with the semiconductor chip 6 is only on the surface of the semiconductor chip 6 that is closest to the adhesive layer 3, that is, the upper surface 7. The area on the inner side is in contact with the semiconductor chip 6. That is, when the support substrate 1 holds the semiconductor wafer 6, only the front end surface 5 of the semiconductor wafer 6 is in contact with the adhesive layer 3, and the entire area of each front end surface 5 in contact with the semiconductor wafer 6 is in contact with the semiconductor wafer 6. The support substrate 1 holds the semiconductor chip 6 by contacting the entire area of the front end surface 5 with the surface of the semiconductor chip 6 that is closest to the adhesive layer 3, that is, the area inside the upper surface 7.

Here, the entire area of the front end surface 5 is located inside compared to the area of the upper surface 7 of the semiconductor wafer 6 in contact with the front end surface 5. Therefore, even if the semiconductor wafer 6 is held on the support substrate 1, the semiconductor wafer 6 is pressed Abutting against the adhesive layer 3 causes the adhesive layer 3 to deform, and there is no rewinding of the adhesive layer 3 to the side surface 8 of the semiconductor chip 6.

By using the support substrate 1 of the present embodiment, even as shown in FIG. 2(B), the laser light irradiating part is used to make the laser light pass through the substrate 2 from the substrate 2 side of the support substrate 1 and face to pass and adhere The semiconductor wafer 6 held on the support substrate 1 in contact with the layer 3 is irradiated to the entire front end surface 5 to peel off the semiconductor wafer 6 from the adhesive layer 3 and impart kinetic energy to the semiconductor wafer 6 on the upper surface 7 of the support substrate 1 and the adhesive layer 3 There will be no deviation in the timing of the semiconductor chip 6 leaving the adhesive layer 3 within the contact range, but as shown in Fig. 2(C), the falling attitude of the semiconductor chip 6 is stable, as shown in Fig. 2(D). It is transferred to the substrate 9 to be transferred with high precision.

In addition, the support substrate 1 of the present invention can also be a support substrate 1 having a front end surface 5, which is the closest adhesive layer between the front end surface 5 and the semiconductor chip 6 when the support substrate 1 holds the semiconductor chip 6 The surfaces of 3 are in contact with the area containing the center or the center of gravity of the upper surface 7. By using the support substrate 1 with such a front end surface 5 and using the laser lift-off method to transfer the semiconductor wafer 6 to the substrate 9 to be transferred, the entire area of the front end surface and the upper surface 7 include the center or the center of gravity. Areas are in contact, so that when the semiconductor chip 6 leaves the adhesive layer 3 in Figs. 2(B) to 2(C), the falling attitude of the semiconductor chip 6 is more stable. Therefore, compared to the entire area of the front end surface 5 and not including the semiconductor chip The center of 6 or the area of the center of gravity can be transferred with higher precision in the following example. Moreover, it is more preferable if the center or the center of gravity of the front end surface 5 and the upper surface 7 are substantially the same. Example 2

The embodiment of the supporting substrate 11 that is the supporting substrate of the semiconductor chip of the second embodiment of the supporting substrate of the semiconductor chip of the present invention will be described with reference to FIG. 4. Fig. 4 shows the relationship between the size and position of the front end surface 15 and the upper surface 7 as viewed in the direction of arrow b in Fig. 2(A) as described in the first embodiment. The front end surface 15 of the adhesive layer 13 of the support substrate 11 has a circular area, and the entire area of the front end surface 15 is in contact with the upper surface 7 inside the area of the upper surface 7 of the semiconductor chip 6. Since the front end surface 15 has a circular area, as shown in FIG. 2(B), when the laser light is irradiated from the support substrate 11 side to the semiconductor chip 6 by the laser light irradiation part (not shown), the efficiency is only better. The area of the front end surface 15 is irradiated with laser light efficiently.

If the shape of the area of the front end surface 15 is rectangular, when a circular laser light is used to irradiate the entire area of the front end surface 15 with laser light, the area including the front end surface 15 of the rectangle will be applied to the circular area Irradiate laser light. This state is shown in FIG. 6. Fig. 6(A) is a view viewed in the direction of arrow c in Fig. 2(B). In FIG. 6(A), the irradiation range 18 of the laser light is a circular area including the entire area of the front end surface 15 of the adhesive layer 13. Therefore, the area 16 except for the area of the rectangular front end surface 15 is also irradiated to the laser light . The area 16 includes a part of the upper surface 7 of the semiconductor wafer 6, so there is a possibility that the semiconductor wafer 6 is irradiated with laser light and the semiconductor wafer 6 is damaged. FIG. 6(B) shows the range of the area 17 on the upper surface 7 of the semiconductor wafer 6 that may be damaged by the circular laser light.

In contrast, by using the support substrate 11 of this embodiment, only the entire area of the front end surface 15 of the adhesive layer 13 can be irradiated with circular laser light efficiently, and therefore, damage to the semiconductor chip 6 can be reduced. Example 3

An example of the transfer device of the present invention will be described with reference to FIG. 7. The transfer device 20 of the third embodiment of the present invention includes a support substrate 1, a support substrate holding portion 22, a laser light irradiation portion 23, and a transfer substrate holding portion 24.

The support substrate 1 is the same as the support substrate 1 described with reference to FIG. 1 in the first embodiment.

The support substrate holding portion 22 has an opening, and holds the support substrate 1 holding the semiconductor wafer 6 in advance so that the side holding the semiconductor wafer 6 faces the lower side in the Z-axis direction. At this time, the support substrate 1 is held by the support substrate holding portion 22 in such a positional relationship that at least the semiconductor wafer 6 held on the support substrate 1 is included in the opening range of the support substrate holding portion 22 with respect to the Z-axis direction. Thereby, the laser light 25 generated from the laser light irradiation part 23 can be irradiated to the semiconductor wafer 6 held by the support substrate 1 held by the support substrate holding part 22 through the opening of the support substrate holding part 22.

The laser light irradiation unit 23 includes a laser light source 26, a galvanometer mirror 27, and an fθ lens. The laser light source 26 is a light source for irradiating the laser light 25. The galvanometer mirror 27 can rotate in two axes and has the function of reflecting the laser light 25 at any angle. The fθ lens 28 has a function of focusing the laser light 25 from the galvanometer mirror 27 at a specific position.

With this configuration, the laser light irradiation section 23 passes the laser light 25 from the laser light source 26 from the upper part of the support substrate 1 held in the support substrate holding section 22 in the Z-axis direction, that is, the side opposite to the side where the semiconductor chip 6 is held. The galvanometer mirror 27 and the fθ lens 28 align the focus of the laser light 25 on any semiconductor wafer 6 held on the support substrate 1 and irradiate it.

The transferred substrate holding portion 24 is located on the lower side of the supporting substrate holding portion 22 in the Z-axis direction, and holds the transferred substrate 9 so as to face the supporting substrate 1 with a gap. The substrate holding portion 24 to be transferred has a moving portion 29 capable of moving in the X-axis direction and the Y-axis direction, and can be set to a specific X relative to any semiconductor wafer 6 held by the support substrate 1 held by the support substrate holding portion 22 The transfer position in the axial direction and the Y-axis direction determines the specific position of the substrate 9 to be transferred.

The transferred substrate holding portion 24 aligns the specific position on the transferred surface 10 of the transferred substrate 9 with the X-axis direction and the Y-axis of the specific semiconductor wafer 6 held by the opposing support substrate 1 Positioning is performed by using the laser light irradiating section 23 to irradiate the semiconductor wafer 6 held at a specific position of the support substrate 1 with laser light 25, and the specific position of the transfer surface 10 of the substrate 9 to be transferred is irradiated with laser light 25 Position transfer of a specific semiconductor wafer 6.

By using the transfer device 20, as described above, the support substrate 1 has a shape in which there is no rewinding of the adhesive layer to the side surface of the semiconductor chip 6. Therefore, it is not easy to produce the semiconductor chip 6 in the area where the semiconductor chip 6 contacts the adhesive layer. The timing of leaving the adhesive layer is inconsistent, and the falling posture of the semiconductor wafer 6 is stable during transfer. Therefore, the semiconductor wafer 6 can be transferred at a specific position on the transferred surface 10 of the transfer substrate 9 with high precision.

Here, the transfer device 20 of the third embodiment can also use the transfer substrate 9 ′ having the same structure as the support substrate 1 as the transfer substrate 9.

The substrate 9'to be transferred has an adhesive layer forming protrusions similarly to the supporting substrate 1. The convex part has adhesiveness on the front end surface. The semiconductor wafer 6 is held by the substrate to be transferred by contacting the front end surface of the adhesive with the surface of the semiconductor wafer 6 to be transferred. In this embodiment, the arrangement of the protrusions is different from that of the support substrate 1, for example, the distance between adjacent protrusions is greater than the distance between adjacent protrusions of the support substrate 1, and so on.

Thereby, the transferred substrate 9'held by the transferred substrate holding portion 24 on which the semiconductor wafer 6 has been transferred can be taken out from the transferred substrate holding portion 24, and the transferred substrate 9'can be reversed in the Z-axis direction. Then, the side holding the semiconductor wafer 6 in the supporting substrate holding portion 22 faces the lower side in the Z-axis direction, and the transferred substrate 9 ′ is held as a new supporting substrate by the supporting substrate holding portion 22.

The transferred substrate 9 uses the transferred substrate 9'with the same structure as the support substrate 1, whereby there is no rewinding of the adhesive layer of the transferred substrate 9'to the side surface of the semiconductor wafer 6, so even if it will be transferred The substrate 9'serves as a supporting substrate and is further transferred to other substrates to be transferred or mounting substrates, which can also be transferred with high precision. Example 4

As shown in the flow chart of FIG. 8, the transfer method of Embodiment 4 of the present invention has a semiconductor wafer holding step (S1) and a transfer step (S2). Each step will be described using FIG. 9 and FIG. 2.

The semiconductor wafer holding step (S1) is a step of holding the semiconductor wafer 6 on the support substrate 1 described in the first embodiment.

In the semiconductor chip holding step (S1), for the surface of the semiconductor chip 6 closest to the adhesive layer 3 of the support substrate 1, that is, the upper surface 7, to support the adhesive front end surface 5 of the protrusion 4 of the adhesive layer 3 of the substrate 1 The entire area enters the inner side of the area of the upper surface 7 so that the front end surface 5 is in contact with the upper surface 7 and the semiconductor chip 6 is held on the support substrate 1.

Here, in an example in which a plurality of semiconductor wafers 6 are held on the support substrate 1 at the same time, a carrier substrate 30 holding the semiconductor wafers 6 is prepared. The carrier substrate 30 has a carrier substrate adhesive layer 31 on one side. For example, as shown in FIG. 9(A), the semiconductor wafer is held by contacting the carrier substrate adhesive layer 31 with the bottom surface 37 that is the opposite side of the upper surface 7 of the semiconductor chip 6 6. In addition, the carrier substrate adhesive layer 31 is fabricated in such a way that the adhesive force between the carrier substrate adhesive layer 31 and the bottom surface 37 is smaller than the adhesive force generated by the adhesive when the front end surface 5 of the support substrate 1 is in contact with the upper surface 7.

Moreover, according to the arrangement of the respective upper surfaces 7 of the plurality of semiconductor chips 6 on the carrier substrate 30, the arrangement of the front end faces 5 of the protrusions 4 of the adhesive layer 3 of the support substrate 1 is such that the front end faces 5 are in contact with the upper faces 7 At this time, the entire area of each front end surface 5 is formed in an arrangement in which the inner side of the area facing the upper surface 7 is in contact.

The front end surface 5 of the support substrate 1 and the upper surface 7 of the semiconductor wafer 6 held on the carrier substrate 30 are opposed to each other with a gap, and the entire area of each front end surface 5 is between the upper surface 7 of the specific semiconductor wafer 6 The area of the range is equal to or the inner area is in contact with the upper surface 7, and the positional relationship between the carrier substrate 30 and the support substrate 1 in the X-axis direction and the Y-axis direction is aligned by a position determining device not shown in advance. The upper surface 7 and the front end surface 5 are brought into contact with each other in the Z-axis direction.

Here, the carrier substrate adhesive layer 31 is made in such a way that the adhesive force between the carrier substrate adhesive layer 31 and the bottom surface 37 is smaller than the adhesive force between the front end surface 5 and the upper surface 7 of the support substrate 1 due to the adhesion. Therefore, if the carrier substrate 30 is separated from the support substrate 1 after the front end surface 5 and the upper surface 7 are brought into contact, the adhesive force between the front end surface 5 and the upper surface 7 due to the adhesion is greater than that between the bottom surface 37 and the carrier substrate adhesive layer 31 Since there is a bond due to adhesion, the bottom surface 37 is peeled off from the carrier substrate adhesive layer 31, and the semiconductor chip 6 is held on the support substrate 1. Thereby, the semiconductor wafer 6 can be held on the support substrate in such a manner that the entire area of each front end surface 5 is in contact with the upper surface 7 of the specific semiconductor wafer 6 in an area equal to or inside the area of the upper surface 7 1.

The transfer step (S2) is a step of transferring the semiconductor wafer 6 held on the support substrate 1 to the transfer surface 10 of the transfer substrate 9 using a laser lift-off method.

First, for example, the transfer device 20 described in FIG. 7 of the third embodiment is used to make the support substrate 1 holding the semiconductor wafer 6 in the semiconductor wafer holding step (S1) so that the bottom surface 37 of the semiconductor wafer 6 becomes the lower side in the Z-axis direction. The method is held in the support substrate holding portion 22.

Then, as shown in FIG. 9(B), the transferred substrate 9 is held by the transferred substrate holding portion 24 so that the transferred surface 10 of the transferred substrate 9 becomes the upper side in the Z-axis direction. Then, the specific position on the transferred surface 10 of the substrate 9 to be transferred is aligned with the position of the specific semiconductor chip 6 held by the opposite support substrate 1 in the X-axis direction and the Y-axis direction, by The not-shown laser light irradiating part allows the laser light 25 to pass through the substrate 2 of the support substrate 1 and irradiate the semiconductor wafer 6 held at a specific position of the support substrate 1 to transfer the specific semiconductor wafer 6 to the substrate 9 to be transferred. The specific position of the transferred surface 10.

By using this transfer method, the transfer can be performed without the adhesive layer winding to the side surface 8 of the semiconductor wafer 6. Therefore, the semiconductor wafer 6 is not easily produced in the range where the semiconductor wafer 6 and the adhesive layer 3 are in contact during transfer. The timing of leaving the adhesive layer 3 is inconsistent, and the falling posture of the semiconductor wafer 6 during transfer is stable. Therefore, the semiconductor wafer 6 can be transferred to a specific position of the transfer surface 10 of the transfer substrate 9 with high accuracy.

In addition, in the transfer step (S2), the transferred substrate 9 ′ of the adhesive layer having the same structure as the support substrate 1 described in the first embodiment can also be used instead of the transferred substrate 9.

The substrate 9'to be transferred has an adhesive layer forming protrusions similarly to the supporting substrate 1. The convex part has adhesiveness on the front end surface. By contacting the front end surface of the adhesive with the surface of the semiconductor wafer 6 on the side to be transferred, the semiconductor wafer 6 can be held by the substrate to be transferred. In this embodiment, the arrangement of the protrusions is different from that of the support substrate 1, for example, the distance between adjacent protrusions is greater than the distance between adjacent protrusions of the support substrate 1, and so on.

Thereby, it is possible to transfer the transferred substrate 9'as a new supporting substrate to another transferred substrate or a mounting substrate with high accuracy.

Above, the embodiments of the present invention have been described, but the present invention is not limited to these. For example, the support substrate of the present invention can also be that the entire area of the front end surface of the protruding portion of the adhesive layer is not only the area more inside than the surface of the semiconductor wafer closest to the adhesive layer when it is in contact with the semiconductor chip, but also only the area with the semiconductor chip. The same area as the surface closest to the adhesive layer is in contact with the semiconductor chip.

In addition, it is also possible that the convex portion of the support substrate of the present invention has a plurality of front end surfaces, and all areas of the plurality of front end surfaces are in contact with each other within the area of the surface of a semiconductor chip closest to the adhesive layer.

In addition, the adhesive layer of the supporting substrate of the present invention may also exist in parts other than the convex portions. For example, as shown in FIG. 10(A)(B), on the surface of the adhesive layer 43 of the support substrate 41 on the opposite side of the substrate 2 side, there may be a surface 46 different from the front end surface 45 of the convex portion 44. Here, FIG. 10(A) is a plan view of the support substrate 41 viewed from the adhesive layer 43 side, and FIG. 10(B) is a view viewed in the direction of arrow d in FIG. 10(A).

In addition, the adhesive layer 43 of the supporting substrate of the present invention may not have adhesiveness in the entire range, or may have adhesiveness only on the front end surface 45.

In addition, the supporting substrate of the present invention may also be an adhesive layer that does not include a material that decomposes to generate gas components by being irradiated with laser light, but has only adhesive properties. In this case, a sacrificial layer containing a material that decomposes to generate gas components by being irradiated with laser light can be provided on the semiconductor chip side, or the material of the semiconductor chip can include a material that decomposes to generate gas components by being irradiated with laser light .

Moreover, as long as the laser light irradiating part of the transfer device of the present invention can irradiate laser light to any position, it is not limited to the configuration of the third embodiment. For example, a polygon mirror can be used instead of the galvanometer mirror 27 shown in FIG. 7, and a mask can also be used instead of the galvanometer mirror 27 and the fθ lens 28.

In addition, the transfer device of the present invention may be a support substrate holding portion having a moving portion capable of moving in the X-axis direction and the Y-axis direction, compared to the support substrate holding portion 22 of the third embodiment described using FIG. 7, or It may have a structure in which the moving part of the support substrate holding portion 22 moves in the X-axis direction and the Y-axis direction while holding the support substrate 1, so that the position of any semiconductor wafer 6 held on the support substrate 1 is aligned with the lightning. After the position of the laser light 25 irradiated by the light source 26, the laser light 25 is irradiated.

Moreover, the semiconductor wafer holding step (S1) of the transfer method of the present invention described using FIG. 9(A), as long as the upper surface 7 of the semiconductor wafer 6 and the front end surface 5 of the protrusion 4 of the adhesive layer 3 of the support substrate 1 can be Contact with a specific positional relationship is sufficient. For example, a carrier substrate 30 provided with a carrier substrate adhesive layer 31 can also be used and a laser lift method is used to hold the semiconductor chip 6 on the support substrate 1. The carrier substrate adhesive layer 31 performs the following functions : The gas component is generated by irradiating the laser light, thereby releasing the held state of the held semiconductor chip and imparting kinetic energy to the semiconductor chip 6.

In addition, the semiconductor wafer holding step (S1) of the transfer method of the present invention described using FIG. 9(A) may also be for the semiconductor wafer 6 directly held by a holding device not shown without using the carrier substrate 30, When the front end surface 5 and the upper surface 7 are in contact, the entire area of the front end surface 5 is in contact with the same area as the area opposite to the upper surface 7 or the inner side of the area opposite to the upper surface 7. After the wafer 6 is moved, the front end surface 5 of the support substrate 1 is brought into contact with the upper surface 7 of the semiconductor wafer 6 so that the semiconductor wafer 6 is held on the support substrate 1.

Moreover, when the transfer substrate having the same structure as the support substrate 1 described in Embodiment 1 is used for the transfer substrate in the transfer device and the transfer method of the present invention, the convexity of the adhesive layer of the transfer substrate is The arrangement of the parts can be the same as the arrangement of the convex parts of the adhesive layer of the support substrate. In addition, the number of the front end surfaces of the supporting substrate may be the same as or different from the number of the front end surfaces of the substrate to be transferred.

1: Support substrate 2: substrate 3: Adhesive layer 4: Convex 5: Front face 6: Semiconductor wafer 7: Upper surface 8: side 8a: side 9: Substrate to be transferred 9': substrate to be transferred 10: Surface to be transferred 11: Support substrate 13: Adhesive layer 15: Front face 16: area 17: area 18: Irradiation range 20: transfer device 22: Support substrate holding part 23: Laser light irradiation section 24: Transfer substrate holding part 25: Laser light 26: Laser light source 27: Galvanometer mirror 28: fθ lens 29: Mobile Department 30: Carrier substrate 31: Carrier substrate adhesive layer 37: Bottom 41: Support substrate 43: Adhesive layer 44: Convex 45: Front face 46: Noodles 101: Support substrate 102: substrate 103: Adhesive layer

1(A) and (B) are diagrams illustrating the supporting substrate of the semiconductor chip according to the first embodiment of the present invention. 2(A) to (D) are diagrams illustrating the transfer method of the supporting substrate using the semiconductor wafer of the present invention. FIG. 3 is a view viewed in the direction of arrow b in FIG. 2(A), and is a view illustrating the support substrate of the semiconductor chip of the first embodiment of the present invention. FIG. 4 is a diagram illustrating the support substrate of the semiconductor chip of the second embodiment of the present invention, and is a diagram viewed from the same direction as the direction of the arrow b in FIG. 2(A) of the first embodiment. 5(A)-(D) are diagrams illustrating the transfer of a support substrate with an adhesive layer of uniform thickness on the entire surface. Figures 6(A) and (B) are diagrams viewed in the direction of arrow c in Figure 2(B). Fig. 7 is a diagram illustrating the transfer device of the third embodiment of the present invention. FIG. 8 is a flowchart illustrating the transfer method of Embodiment 4 of the present invention. 9(A) and (B) are diagrams illustrating the transfer method of Embodiment 4 of the present invention. 10(A) and (B) are diagrams illustrating other forms of the supporting substrate of the present invention.

1: Support substrate

2: substrate

3: Adhesive layer

4: Convex

5: Front face

6: Semiconductor wafer

7: Upper surface

8: side

9: Substrate to be transferred

25: Laser light

Claims (7)

A support substrate for a semiconductor chip, characterized in that it has an adhesive layer on one side, holds the semiconductor chip via the adhesive layer, and releases the semiconductor chip by irradiating the semiconductor chip with laser light from the side opposite to the side where the semiconductor chip is held. The holding state of the semiconductor chip and imparting kinetic energy to the above-mentioned semiconductor chip; and The surface on the side in contact with the semiconductor chip has a convex portion including the adhesive layer, The front end surface of the above-mentioned protrusion has adhesiveness, When the entire area of the front end surface of the convex portion is in contact with the semiconductor chip, it is only in the same area as the surface of the semiconductor chip closest to the adhesive layer or inside than the surface of the semiconductor chip closest to the adhesive layer The area is in contact with the above-mentioned semiconductor wafer. The support substrate for a semiconductor chip according to claim 1, wherein when the entire area of the front end surface of the protrusion is in contact with the semiconductor chip, only the center or the center of gravity of the surface closest to the adhesive layer of the semiconductor chip is included. The area on the inner side of the surface closest to the adhesive layer of the semiconductor chip is in contact with the semiconductor chip. The semiconductor chip supporting substrate of claim 1 or 2, wherein the front end surface of the convex portion is circular. A transfer device, characterized in that it uses laser light to transfer semiconductor wafers, and have: A supporting substrate, which holds one side of the above-mentioned semiconductor wafer; A support substrate holding portion, which holds the above-mentioned support substrate; A laser light irradiating part which irradiates the above-mentioned semiconductor wafer with laser light; and A transferred substrate holding portion, which holds the transferred substrate to which the above-mentioned semiconductor wafer is transferred; and The support substrate has a convex portion including an adhesive layer on the surface of the side holding the semiconductor chip, The above-mentioned protrusion has adhesiveness on the front end surface, When the entire area of the front end surface of the convex portion is in contact with the semiconductor wafer, it is only in the area equivalent to the surface of the semiconductor wafer closest to the adhesive layer or more inside than the surface of the semiconductor wafer closest to the adhesive layer The area is in contact with the above-mentioned semiconductor wafer, The surface of the semiconductor wafer held on the support substrate opposite to the support substrate side and the surface of the transfer substrate on the side to which the semiconductor wafer is transferred are spaced to face each other. While the transferred substrate holding portion holds the transferred substrate, the semiconductor wafer is released by irradiating the semiconductor wafer with laser light from the laser light irradiating portion from the side opposite to the side of the support substrate on which the semiconductor wafer is held. The holding state of the wafer, and the transfer of the semiconductor wafer to the substrate to be transferred due to the kinetic energy imparted to the semiconductor wafer from the side of the semiconductor wafer when viewed from the adhesive layer. The transfer device of claim 4, wherein the substrate to be transferred is A convex portion including an adhesive layer is provided on the surface of the substrate to be transferred on the side on which the semiconductor wafer is transferred, and The front end surface of the convex portion of the substrate to be transferred has adhesiveness, When the entire area of the front end surface of the convex portion of the substrate to be transferred is in contact with the semiconductor wafer, only the area equivalent to the surface of the semiconductor wafer closest to the adhesive layer or the area closest to the semiconductor wafer The area on the inner side of the adhesive layer is in contact with the semiconductor chip. A method for transferring semiconductor wafers, characterized in that it is a method for transferring semiconductor wafers using laser light, and includes: A semiconductor wafer holding step, which is to make the adhesive layer of the support substrate hold one side of the semiconductor wafer; and The transfer step is provided on the surface of the semiconductor wafer held by the adhesive layer of the support substrate on the side opposite to the support substrate side and the surface of the substrate to be transferred on the side where the semiconductor wafer is transferred The substrate to be transferred is arranged in a spatially opposed position, and the holding of the semiconductor wafer by the support substrate is released by irradiating the semiconductor wafer with laser light from the side opposite to the side on which the semiconductor wafer is held of the support substrate State, and transfer the semiconductor wafer to the transferred substrate by imparting kinetic energy to the transferred substrate to the semiconductor wafer; and The above-mentioned supporting substrate is characterized by: Having a convex portion including the adhesive layer on the surface on the side holding the semiconductor chip, The above-mentioned protrusion has adhesiveness on the front end surface, When the entire area of the front end surface of the convex portion is in contact with the semiconductor chip, it is only in the same area as the surface of the semiconductor chip closest to the adhesive layer or inside than the surface of the semiconductor chip closest to the adhesive layer The area is in contact with the aforementioned semiconductor wafer; and The above-mentioned semiconductor wafer holding step is The one surface of the semiconductor wafer is attached to the front end surface of the protrusion of the adhesive layer of the support substrate to hold the semiconductor wafer on the support substrate. The semiconductor wafer transfer method of claim 6, wherein the substrate to be transferred is Having a convex portion including an adhesive layer on the surface of the substrate to be transferred on the side on which the semiconductor wafer is transferred, The front end surface of the convex portion of the substrate to be transferred has adhesiveness, When the entire area of the front end surface of the convex portion of the substrate to be transferred is in contact with the semiconductor wafer, only the area equivalent to the surface of the semiconductor wafer closest to the adhesive layer or the area closest to the semiconductor wafer The area on the inner side of the adhesive layer is in contact with the semiconductor chip.

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