TW202105585A - Semiconductor chip supporting substrate, transfer apparatus, and transfer method - Google Patents
Semiconductor chip supporting substrate, transfer apparatus, and transfer method Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 316
- 239000004065 semiconductor Substances 0.000 title claims abstract description 304
- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000012790 adhesive layer Substances 0.000 claims abstract description 144
- 235000012431 wafers Nutrition 0.000 claims description 166
- 230000001678 irradiating effect Effects 0.000 claims description 15
- 230000005484 gravity Effects 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 description 15
- 239000000853 adhesive Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- -1 polysiloxane Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Abstract
Description
本發明係關於一種高精度且穩定地安裝半導體晶片之安裝方法及安裝裝置。The present invention relates to a mounting method and mounting device for mounting semiconductor chips with high precision and stability.
半導體晶片因成本降低而推進小型化,且一直在進行用以高精度地安裝小型化之半導體晶片之研究。尤其為了顯示器用,開發了稱為微LED(Luminescent Diode,發光二極體)之50 μm×50 μm以下之半導體晶片,要求以數μm之精度且高速地安裝微LED。The miniaturization of semiconductor wafers has been promoted due to cost reduction, and research has been conducted to mount miniaturized semiconductor wafers with high precision. Especially for displays, semiconductor chips of 50 μm×50 μm or less called micro LEDs (Luminescent Diodes) have been developed, and micro LEDs are required to be mounted with a precision of several μm and at a high speed.
專利文獻1中記載有藉由轉印方法而排除轉印時之空氣阻力之影響從而高精度地轉印、安裝LED晶片之技術,該轉印方法具備:被轉印基板配置步驟,其係在真空環境下於一面保持於轉印基板之LED晶片之與一面為相反側之面以存在間隙地對向之方式配置被轉印基板;及轉印步驟,其係藉由向轉印基板照射雷射光,而使LED晶片自轉印基板分離,並且向被轉印基板被賦予動能而轉印至被轉印基板。
先前技術文獻
專利文獻
專利文獻1:日本專利特開2018-60993號公報Patent Document 1: Japanese Patent Laid-Open No. 2018-60993
[發明所欲解決之問題][The problem to be solved by the invention]
於保持半導體晶片之支持基板中,多為例如於如圖5(A)所示之支持基板101之保持半導體晶片6之側之面具有均等厚度之包含黏著劑之黏著層103者。於此種具有黏著層103之支持基板101所保持之半導體晶片6與黏著層103之接著狀態下,例如存在如下可能性,即,為了使半導體晶片6接合於設置在基板102之黏著層103上而將半導體晶片6壓抵於黏著層103時,黏著層103變形,黏著層103亦會迴繞至半導體晶片之側面。圖5(A)中示出黏著層103迴繞至半導體晶片6之左側之側面8a之情況。Among the support substrates holding semiconductor chips, for example, the
於黏著層103迴繞至半導體晶片6之側面8a之狀態下,藉由專利文獻1中記載之方法,即,對於在真空環境下與支持基板101空開間隙地對向之被轉印基板9,使用雷射掀離法將保持於支持基板101之半導體晶片6轉印至被轉印基板9時,因迴繞至半導體晶片6之側面8a之黏著層103之影響,而如圖5(B)所示,於半導體晶片6與黏著層103接觸之面即上表面7與半導體晶片6之各側面8之間、或半導體晶片6之側面8a與其以外之側面8之間,該半導體晶片6之各部位自黏著層103離開之時機產生差異。因此,存在如下可能性,即,如圖5(C)所示,藉由雷射掀離法而讓半導體晶片6自支持基板101向被轉印基板9被賦予動能時半導體晶片6之姿態歪斜,如圖5(D)所示,對半導體晶片6轉印至被轉印基板9之精度產生不良影響。With the
鑒於上述問題,本發明之目的在於提出一種於使用雷射掀離法自支持基板向被轉印基板轉印半導體晶片時可高精度地轉印半導體晶片的半導體晶片之支持基板、轉印裝置及轉印方法。 [解決問題之技術手段]In view of the above-mentioned problems, the object of the present invention is to provide a support substrate, a transfer device and a semiconductor wafer that can transfer the semiconductor wafer with high precision when the semiconductor wafer is transferred from the support substrate to the substrate to be transferred using the laser lift-off method Transfer method. [Technical means to solve the problem]
為了解決上述問題,本發明之支持基板之特徵在於:其係半導體晶片之支持基板,於一面具有黏著層,經由上述黏著層保持半導體晶片,藉由自保持有上述半導體晶片之側之相反側向上述半導體晶片照射雷射光而解除上述半導體晶片之保持狀態,並且對上述半導體晶片賦予動能;且與上述半導體晶片接觸之側之面具有包含上述黏著層之凸部,上述凸部於前端面具有黏著性,上述凸部之上述前端面之全部區域於與上述半導體晶片接觸時,僅在與上述半導體晶片之最接近上述黏著層之面同等之區域或者較上述半導體晶片之最接近上述黏著層之面更內側之區域與上述半導體晶片接觸。In order to solve the above-mentioned problems, the supporting substrate of the present invention is characterized in that it is a supporting substrate of a semiconductor chip with an adhesive layer on one side, and the semiconductor chip is held by the adhesive layer, and the semiconductor chip is held by the side opposite to the side where the semiconductor chip is held. The semiconductor chip is irradiated with laser light to release the holding state of the semiconductor chip and impart kinetic energy to the semiconductor chip; and the surface on the side in contact with the semiconductor chip has a convex portion including the adhesive layer, and the convex portion has an adhesive on the front end surface When the entire area of the front end surface of the protrusion is in contact with the semiconductor chip, it is only in the area equivalent to the surface of the semiconductor chip closest to the adhesive layer or the surface of the semiconductor chip closest to the adhesive layer The inner region is in contact with the above-mentioned semiconductor wafer.
因能夠於半導體晶片之側面無黏著層之迴繞之狀態下進行雷射掀離,故而於半導體晶片與黏著層接觸之範圍內不易產生半導體晶片離開黏著層之時機之不一致,半導體晶片掉落至被轉印基板之姿態穩定,因此可高精度地進行轉印。Since the laser lift can be carried out without the rewinding of the adhesive layer on the side of the semiconductor chip, it is not easy to produce inconsistencies in the timing of the semiconductor chip leaving the adhesive layer within the contact range of the semiconductor chip and the adhesive layer, and the semiconductor chip will fall to the surface. The posture of the transfer substrate is stable, so the transfer can be performed with high precision.
又,亦可使用具有以下特徵之半導體晶片之支持基板,即,上述凸部之上述前端面之全部區域於與上述半導體晶片接觸時,僅在包含上述半導體晶片之最接近上述黏著層之面之中心或者重心的較上述半導體晶片之最接近上述黏著層之面更內側之區域與上述半導體晶片接觸。In addition, it is also possible to use a support substrate of a semiconductor chip having the following characteristics, that is, when the entire area of the front end surface of the convex portion is in contact with the semiconductor chip, only the surface of the semiconductor chip that is closest to the adhesive layer is included. The center or the center of gravity is in contact with the semiconductor chip in the inner side of the surface of the semiconductor chip closest to the adhesive layer.
藉由將與半導體晶片之黏著層接觸之區域形成為包含半導體晶片之中心或者重心之較小之區域,因接觸區域較小而使半導體晶片離開黏著層之時機更不易產生不一致,除此以外,因接觸區域包含中心或者重心部分而使半導體晶片掉落至第2支持基板上之姿態更穩定,因此可高精度地進行轉印。By forming the area in contact with the adhesive layer of the semiconductor chip into a smaller area including the center or center of gravity of the semiconductor chip, the smaller contact area makes the timing of the semiconductor chip away from the adhesive layer less likely to be inconsistent. In addition, Since the contact area includes the center or the center of gravity, the posture of the semiconductor wafer falling on the second support substrate is more stable, so that the transfer can be performed with high accuracy.
又,亦可使用具有如下特徵之半導體晶片之支持基板,即,上述凸部之上述前端面為圓形。In addition, it is also possible to use a semiconductor wafer support substrate having the characteristic that the front end surface of the convex portion is circular.
藉由將與半導體晶片之黏著層接觸之區域形成為圓形之區域,可向整個前端面高效率地照射雷射光。By forming the area in contact with the adhesive layer of the semiconductor chip into a circular area, the entire front end surface can be irradiated with laser light efficiently.
本發明之轉印裝置之特徵在於:其係使用雷射光轉印半導體晶片者,且具有:支持基板,其保持上述半導體晶片之一面;支持基板保持部,其保持上述支持基板;雷射光照射部,其向上述半導體晶片照射雷射光;及被轉印基板保持部,其保持被轉印有上述半導體晶片之被轉印基板;且上述支持基板於保持上述半導體晶片之側之面具有包含黏著層之凸部,上述凸部於前端面具有黏著性,上述凸部之上述前端面之全部區域於與上述半導體晶片接觸時,僅在與上述半導體晶片之最接近上述黏著層之面同等之區域或者較上述半導體晶片之最接近上述黏著層之面更內側之區域與上述半導體晶片接觸,在以保持於上述支持基板之上述半導體晶片之與上述支持基板側為相反側之面和上述被轉印基板之被轉印有上述半導體晶片之側之面設有空間地對向之方式利用上述被轉印基板保持部保持上述被轉印基板的狀態下,藉由從上述雷射光照射部自上述支持基板之保持有上述半導體晶片之側之相反側向上述半導體晶片照射雷射光而解除上述半導體晶片之保持狀態,且藉由於自上述黏著層觀察時之上述半導體晶片側對上述半導體晶片賦予動能而將上述半導體晶片轉印至上述被轉印基板。The transfer device of the present invention is characterized in that it uses laser light to transfer a semiconductor wafer, and has: a support substrate that holds one surface of the semiconductor wafer; a support substrate holding portion that holds the support substrate; and a laser light irradiation portion , Which irradiates the semiconductor wafer with laser light; and a transferred substrate holding portion that holds the transferred substrate to which the semiconductor wafer is transferred; and the support substrate has an adhesive layer on its surface holding the semiconductor wafer The convex portion, the convex portion has adhesiveness on the front end surface, and the entire area of the front end surface of the convex portion when in contact with the semiconductor chip is only in the same area as the surface of the semiconductor chip closest to the adhesive layer or The area on the inner side of the semiconductor wafer closest to the adhesive layer is in contact with the semiconductor wafer, and the surface of the semiconductor wafer held on the support substrate opposite to the support substrate side and the transfer substrate The surface on the side on which the semiconductor wafer is transferred is spaced to face each other. In a state where the substrate to be transferred is held by the substrate holding portion to be transferred, the support substrate is removed from the laser light irradiating portion. The side opposite to the side where the semiconductor chip is held is irradiated with laser light to the semiconductor chip to release the held state of the semiconductor chip, and the semiconductor chip is provided with kinetic energy due to the side of the semiconductor chip when viewed from the adhesive layer. The semiconductor wafer is transferred to the substrate to be transferred.
藉由使用本發明之轉印裝置,能夠於半導體晶片之側面無黏著層之迴繞之狀態下進行雷射掀離,因此,於半導體晶片與黏著層接觸之範圍內不易產生半導體晶片離開黏著層之時機之不一致,半導體晶片掉落至被轉印基板之姿態穩定,因此可高精度地進行轉印。By using the transfer device of the present invention, the laser lift can be carried out without the rewinding of the adhesive layer on the side of the semiconductor chip. Therefore, it is not easy to cause the semiconductor chip to leave the adhesive layer within the contact range of the semiconductor chip and the adhesive layer. The timing is not consistent, and the posture of the semiconductor wafer falling to the substrate to be transferred is stable, so the transfer can be performed with high precision.
又,於本發明之轉印裝置中,其特徵亦可在於:上述被轉印基板於被轉印有上述半導體晶片之側之面具有包含黏著層之凸部,上述被轉印基板之上述凸部於前端面具有黏著性,上述被轉印基板之上述凸部之上述前端面之全部區域於與上述半導體晶片接觸時,僅在與上述半導體晶片之最接近上述黏著層之面同等之區域或者較上述半導體晶片之最接近上述黏著層之面更內側之區域與上述半導體晶片接觸。Furthermore, in the transfer device of the present invention, the transfer device may be characterized in that the substrate to be transferred has a convex portion including an adhesive layer on the surface on the side to which the semiconductor wafer is transferred, and the convex portion of the substrate to be transferred The portion has adhesiveness on the front end surface. When the entire area of the front end surface of the convex portion of the substrate to be transferred is in contact with the semiconductor wafer, only the area equivalent to the surface of the semiconductor wafer closest to the adhesive layer or A region on the inner side of the surface of the semiconductor chip closest to the adhesive layer is in contact with the semiconductor chip.
藉由使用與支持基板同樣具有不會迴繞至半導體晶片之側面之形狀之黏著層之被轉印基板,而即便將該被轉印基板作為支持基板進而轉印至其他被轉印基板或安裝基板,亦可高精度地轉印。By using a substrate to be transferred that has an adhesive layer that does not wrap around to the side surface of the semiconductor wafer as the support substrate, even if the substrate to be transferred is used as a support substrate and then transferred to other substrates to be transferred or mounting substrates , Can also transfer with high precision.
本發明之轉印方法之特徵在於:其係使用雷射光轉印半導體晶片之轉印方法,且具備:半導體晶片保持步驟,其係使支持基板之黏著層保持上述半導體晶片之一面;以及轉印步驟,其係在上述支持基板之上述黏著層所保持之上述半導體晶片之與上述支持基板側為相反側之面和被轉印基板之被轉印有上述半導體晶片之側之面設有空間地對向之位置配置上述被轉印基板,且藉由自上述支持基板之保持有上述半導體晶片之側之相反側向上述半導體晶片照射雷射光而解除上述半導體晶片之利用上述支持基板之保持狀態,並且藉由向上述被轉印基板對上述半導體晶片賦予動能而將上述半導體晶片轉印至上述被轉印基板;且上述支持基板之特徵在於:於保持上述半導體晶片之側之面具有包含上述黏著層之凸部,上述凸部於前端面具有黏著性,上述凸部之上述前端面之全部區域於與上述半導體晶片接觸時,僅在與上述半導體晶片之最接近上述黏著層之面同等之區域或者較上述半導體晶片之最接近上述黏著層之面更內側之區域與上述半導體晶片接觸;且上述半導體晶片保持步驟係於上述支持基板之上述黏著層之上述凸部之上述前端面貼附上述半導體晶片之上述一面而使上述半導體晶片保持於上述支持基板。The transfer method of the present invention is characterized in that it is a transfer method that uses laser light to transfer a semiconductor wafer, and includes: a semiconductor wafer holding step in which an adhesive layer of a support substrate holds one side of the semiconductor wafer; and transfer The step is to provide a space on the surface of the semiconductor wafer held by the adhesive layer of the support substrate on the side opposite to the support substrate side and the surface of the substrate to be transferred on the side where the semiconductor wafer is transferred. The substrate to be transferred is arranged at an opposing position, and the semiconductor wafer is released from the holding state of the semiconductor wafer by the support substrate by irradiating the semiconductor wafer with laser light from the side opposite to the side on which the semiconductor wafer is held of the support substrate, And by imparting kinetic energy to the semiconductor wafer to the substrate to be transferred, the semiconductor wafer is transferred to the substrate to be transferred; and the supporting substrate is characterized in that the surface on the side that holds the semiconductor wafer includes the adhesive The convex part of the layer, the convex part has adhesiveness on the front end surface, and the entire area of the front end surface of the convex part when in contact with the semiconductor chip is only in the same area as the surface of the semiconductor chip closest to the adhesive layer Or a region on the inner side of the semiconductor chip closest to the adhesive layer is in contact with the semiconductor chip; and the semiconductor chip holding step is to attach the semiconductor to the front end surface of the convex portion of the adhesive layer of the support substrate The semiconductor wafer is held by the support substrate on the one side of the wafer.
因於半導體晶片之側面無黏著層之迴繞之狀態下進行雷射掀離,故而於半導體晶片與黏著層接觸之範圍內不易產生半導體晶片離開黏著層之時機之不一致,因此半導體晶片落向被轉印基板之姿態穩定,因此可高精度地轉印。Since the laser lift is performed in the state where there is no rewinding of the adhesive layer on the side of the semiconductor chip, it is not easy to produce inconsistencies in the timing of the semiconductor chip leaving the adhesive layer within the contact area of the semiconductor chip and the adhesive layer, so the semiconductor chip is turned and dropped. The posture of the printed circuit board is stable, so it can transfer with high precision.
又,本發明之轉印方法之特徵亦可在於:上述被轉印基板於上述被轉印基板之被轉印有上述半導體晶片之側之面具有包含黏著層之凸部,上述被轉印基板之上述凸部之前端面具有黏著性,上述被轉印基板之上述凸部之上述前端面之全部區域於與上述半導體晶片接觸時,僅在與上述半導體晶片之最接近上述黏著層之面同等之區域或者較上述半導體晶片之最接近上述黏著層之面更內側之區域與上述半導體晶片接觸。In addition, the transfer method of the present invention may also be characterized in that the substrate to be transferred has a convex portion including an adhesive layer on the surface of the substrate to be transferred on the side where the semiconductor wafer is transferred, and the substrate to be transferred The front end surface of the convex portion has adhesiveness, and the entire area of the front end surface of the convex portion of the substrate to be transferred, when in contact with the semiconductor wafer, is only equivalent to the surface of the semiconductor wafer closest to the adhesive layer A region or a region on the inner side of the surface of the semiconductor chip closest to the adhesive layer is in contact with the semiconductor chip.
藉由使用與支持基板同樣具有不會迴繞至半導體晶片之側面之形狀之黏著層之被轉印基板,即便進而轉印至其他被轉印基板或安裝基板,亦可高精度地轉印。 [發明之效果]By using a substrate to be transferred that has an adhesive layer in a shape that does not wrap around the side surface of the semiconductor wafer as the support substrate, even if it is transferred to another substrate to be transferred or a mounting substrate, the transfer can be performed with high precision. [Effects of Invention]
藉由使用本發明之半導體晶片之支持基板、轉印裝置及轉印方法,於使用雷射掀離法自支持基板將半導體晶片轉印至被轉印基板時,可防止因支持基板之黏著層迴繞至半導體晶片之側面所致之半導體晶片向被轉印基板被賦予動能時之半導體晶片之姿態之紊亂,從而高精度地轉印半導體晶片。By using the semiconductor wafer support substrate, transfer device and transfer method of the present invention, when the semiconductor wafer is transferred from the support substrate to the substrate to be transferred using the laser lift-off method, the adhesion layer of the support substrate can be prevented. Disturbance of the attitude of the semiconductor wafer when the semiconductor wafer is given kinetic energy to the substrate to be transferred caused by the winding to the side surface of the semiconductor wafer, so that the semiconductor wafer can be transferred with high precision.
使用圖式對本發明之半導體晶片之支持基板、轉印裝置及轉印方法之實施形態進行說明。 實施例1The embodiments of the semiconductor wafer support substrate, transfer device, and transfer method of the present invention will be described using figures. Example 1
將本發明之半導體晶片之支持基板之實施例1之實施形態示於圖1。圖1(A)係實施例1之半導體晶片之支持基板即支持基板1之俯視圖,圖1(B)係沿圖1(A)之a箭頭方向觀察之圖。支持基板1具有例如包含如SiO2
或藍寶石般使雷射光透過之素材之平板即基板2以及例如包含如聚醯亞胺、聚矽氧、二甲基聚矽氧烷(PDMS)般具有黏著性之素材之黏著層3。The embodiment of the first embodiment of the supporting substrate for the semiconductor wafer of the present invention is shown in FIG. 1. FIG. 1(A) is a plan view of the supporting
黏著層3於本實施例中例如為包含感光性材料之聚醯亞胺或聚矽氧,具有藉由被照射雷射光而分解產生氣體成分之性質。黏著層3具有如下功能,即,使雷射光從未圖示之雷射光照射部自支持基板1之基板2側透過基板2並朝向藉由與黏著層3接觸而保持於支持基板1之半導體晶片6照射時黏著層3之聚合物因被分解而氣體化,藉此解除利用支持基板1對半導體晶片6之保持狀態並且對半導體晶片6賦予動能。藉由具有持有此種功能之黏著層3,可藉由雷射掀離法轉印保持於支持基板1之半導體晶片6。In this embodiment, the
黏著層3設置於基板2之一面,於基板2之該一面形成凸部形狀之複數個凸部4。如圖1(B)所示,本實施例之支持基板1於基板2上除凸部4以外之區域未設置黏著層3。此種黏著層3可例如於使用狹縫式塗佈機等將構成黏著層3之黏著劑在基板2上以均等之厚度塗佈於整個面後,使用光微影法等去除除凸部4以外之黏著層3而形成,亦可藉由噴墨法於基板2上形成黏著層3之圖案後形成凸部4,亦可藉由其他方法形成黏著層3。The
圖2(A)表示自與圖1(A)之a箭頭方向相同之方向觀察保持有半導體晶片6之支持基板1之圖。又,圖3係沿圖2(A)之b箭頭方向觀察之圖,表示支持基板1之前端面5與1個半導體晶片6接觸之範圍。如圖2(A)及圖3之影線部所示,各凸部4之前端面5之全部區域於與半導體晶片6接觸時僅在半導體晶片6之最接近黏著層3之面即上表面7之內側之區域與半導體晶片6接觸。即,於支持基板1保持半導體晶片6時,半導體晶片6僅前端面5與黏著層3接觸,與半導體晶片6接觸之各前端面5之全部區域與半導體晶片6接觸。藉由前端面5之全部區域與半導體晶片6之最接近黏著層3之面即上表面7之內側之區域接觸,而讓支持基板1保持半導體晶片6。FIG. 2(A) shows a view of the
此處,前端面5之全部區域相較於與前端面5接觸之半導體晶片6之上表面7之區域位於內側,因此,即便因為了使半導體晶片6保持於支持基板1而將半導體晶片6壓抵於黏著層3導致黏著層3變形,亦不存在黏著層3向半導體晶片6之側面8之迴繞。Here, the entire area of the
藉由使用本實施例之支持基板1,即便如圖2(B)所示,利用未圖示之雷射光照射部使雷射光自支持基板1之基板2側透過基板2並朝向藉由與黏著層3接觸而保持於支持基板1之半導體晶片6照射至前端面5整體,而使半導體晶片6自黏著層3剝離並且對半導體晶片6賦予動能,於支持基板1之上表面7與黏著層3接觸之範圍內亦不會產生半導體晶片6離開黏著層3之時機之偏差,而是如圖2(C)所示,半導體晶片6之掉落姿態穩定,如圖2(D)所示,可高精度地轉印至被轉印基板9上。By using the
又,本發明之支持基板1亦可為具有前端面5之支持基板1,該前端面5係當支持基板1保持有半導體晶片6時,前端面5之區域與半導體晶片6之最接近黏著層3之面即上表面7之包含中心或者重心之區域相接觸。藉由使用具有此種前端面5之支持基板1且利用雷射掀離法將半導體晶片6轉印至被轉印基板9,而因前端面之全部區域與上表面7之包含中心或者重心之區域相接觸,使得圖2(B)至圖2(C)中當半導體晶片6離開黏著層3時半導體晶片6之掉落姿態更穩定,因此,較前端面5之全部區域與不包含半導體晶片6之中心或者重心之區域接著之實例而言可更高精度地轉印。又,若前端面5與上表面7之中心或者重心大致一致則更佳。
實施例2In addition, the
利用圖4對本發明之半導體晶片之支持基板之實施例2之半導體晶片之支持基板即支持基板11之實施形態進行說明。圖4與實施例1中說明之沿圖2(A)之b箭頭方向觀察同樣地表示前端面15與上表面7之大小與位置之關係。支持基板11之黏著層13之前端面15具有圓形之區域,且在半導體晶片6之上表面7之區域之內側,前端面15之全部區域與上表面7接觸。因前端面15具有圓形之區域,故如圖2(B)所示於藉由未圖示之雷射光照射部自支持基板11側向半導體晶片6照射雷射光時,可效率較佳地僅對前端面15之區域高效地照射雷射光。The embodiment of the supporting substrate 11 that is the supporting substrate of the semiconductor chip of the second embodiment of the supporting substrate of the semiconductor chip of the present invention will be described with reference to FIG. 4. Fig. 4 shows the relationship between the size and position of the
若前端面15之區域之形狀為矩形,則當於使用圓形之雷射光之情形時欲向整個前端面15之區域照射雷射光時,會向包含矩形之前端面15之區域之圓形之範圍照射雷射光。將該狀態示於圖6。圖6(A)係沿圖2(B)之c箭頭方向觀察之圖。於圖6(A)中,雷射光之照射範圍18為包含黏著層13之前端面15之整個區域之圓形之區域,因此,除矩形之前端面15之區域以外之區域16亦被照射到雷射光。區域16包含半導體晶片6之上表面7之一部分之區域,因此有半導體晶片6被照射到雷射光而半導體晶片6受到損害之可能性。圖6(B)表示半導體晶片6之上表面7中之因被照射圓形之雷射光而有可能受到損害之區域17之範圍。If the shape of the area of the
相對於此,藉由使用本實施例之支持基板11,可僅向黏著層13之前端面15之全部區域高效率地照射圓形之雷射光,因此,可減輕對半導體晶片6之損害。
實施例3In contrast, by using the support substrate 11 of this embodiment, only the entire area of the
使用圖7對本發明之轉印裝置之一例進行說明。本發明之實施例3之轉印裝置20具有支持基板1、支持基板保持部22、雷射光照射部23、被轉印基板保持部24。An example of the transfer device of the present invention will be described with reference to FIG. 7. The
支持基板1與實施例1中使用圖1進行說明之支持基板1相同。The
支持基板保持部22具有開口,將預先保持有半導體晶片6之支持基板1以保持半導體晶片6之側朝向Z軸方向下側之方式保持。此時,以如至少保持於支持基板1之半導體晶片6相對於Z軸方向包含於支持基板保持部22之開口範圍之位置關係,由支持基板保持部22保持支持基板1。藉此,自雷射光照射部23產生之雷射光25可經由支持基板保持部22之開口,照射至保持於支持基板保持部22之支持基板1所保持之半導體晶片6。The support
雷射光照射部23包含雷射光源26、檢流計鏡27、fθ透鏡。雷射光源26為照射雷射光25之光源,檢流計鏡27能夠二軸旋轉,且具有以任意角度反射雷射光25之功能。fθ透鏡28具有使來自檢流計鏡27之雷射光25於特定位置對焦之功能。The laser
藉由該構成,雷射光照射部23自保持於支持基板保持部22之支持基板1之Z軸方向上部、即保持半導體晶片6之側之相反側將來自雷射光源26之雷射光25藉由檢流計鏡27與fθ透鏡28使雷射光25之焦點對準保持於支持基板1之任意半導體晶片6而照射。With this configuration, the laser
被轉印基板保持部24位於支持基板保持部22之Z軸方向下側,且以與支持基板1空開間隙地對向之方式保持被轉印基板9。被轉印基板保持部24具有能夠向X軸方向及Y軸方向移動之移動部29,可在相對於被保持在支持基板保持部22之支持基板1所保持之任意半導體晶片6為特定之X軸方向及Y軸方向之被轉印位置決定被轉印基板9之特定之位置。The transferred
藉由被轉印基板保持部24,以使被轉印基板9之被轉印面10上之特定之位置對準相對向之支持基板1所保持之特定之半導體晶片6之X軸方向及Y軸方向之位置之方式進行定位,藉由利用雷射光照射部23向保持於支持基板1之特定之位置之半導體晶片6照射雷射光25,而於被轉印基板9之被轉印面10之特定之位置轉印特定之半導體晶片6。The transferred
藉由使用本轉印裝置20,如上所述,支持基板1具有不存在黏著層向半導體晶片6之側面之迴繞之形狀,因此,於半導體晶片6與黏著層接觸之範圍內不易產生半導體晶片6離開黏著層之時機之不一致,於轉印時半導體晶片6之掉落姿態穩定,因此,可於轉印基板9之被轉印面10之特定之位置高精度地轉印半導體晶片6。By using the
此處,實施例3之轉印裝置20亦可使用與支持基板1相同構造之被轉印基板9'作為被轉印基板9。Here, the
被轉印基板9'與支持基板1同樣地具有形成凸部之黏著層。凸部於前端面具有黏著性。藉由具有黏著性之前端面與半導體晶片6要被轉印之側之面相接觸,而利用被轉印基板保持半導體晶片6。於本實施例中,凸部之排列不同於支持基板1,例如相鄰凸部之間距大於支持基板1之相鄰凸部之間距等。The substrate 9'to be transferred has an adhesive layer forming protrusions similarly to the supporting
藉此,可將轉印有半導體晶片6之保持於被轉印基板保持部24之被轉印基板9'自被轉印基板保持部24取出,使被轉印基板9'向Z軸方向反轉,將於支持基板保持部22保持半導體晶片6之側朝向Z軸方向下側,將被轉印基板9'作為新支持基板藉由支持基板保持部22加以保持。Thereby, the transferred substrate 9'held by the transferred
被轉印基板9使用與支持基板1為相同構造之被轉印基板9',藉此,不存在被轉印基板9'之黏著層向半導體晶片6之側面之迴繞,因此即便將被轉印基板9'作為支持基板進一步轉印至其他被轉印基板或安裝基板亦可高精度地轉印。
實施例4The transferred
本發明之實施例4之轉印方法如圖8之流程所示,具有半導體晶片保持步驟(S1)以及轉印步驟(S2)。使用圖9、圖2對各步驟進行說明。As shown in the flow chart of FIG. 8, the transfer method of
半導體晶片保持步驟(S1)係使半導體晶片6保持於實施例1中說明之支持基板1之步驟。The semiconductor wafer holding step (S1) is a step of holding the
於半導體晶片保持步驟(S1)中,針對半導體晶片6之最接近支持基板1之黏著層3之面即上表面7,以支持基板1之黏著層3之凸部4之具有黏著性之前端面5之全部區域進入上表面7之區域之內側之方式使前端面5與上表面7接觸,而使半導體晶片6保持於支持基板1。In the semiconductor chip holding step (S1), for the surface of the
此處,於使複數個半導體晶片6同時保持於支持基板1之實例中,準備保持有半導體晶片6之載體基板30。載體基板30於一面具有載體基板黏著層31,例如如圖9(A)所示,藉由載體基板黏著層31與半導體晶片6之上表面7之相反側之面即底面37接觸而保持半導體晶片6。又,以載體基板黏著層31與底面37之間之因黏著產生之接著力小於支持基板1之前端面5與上表面7接觸時之因黏著產生之接著力之方式而製作載體基板黏著層31。Here, in an example in which a plurality of
又,根據載體基板30上之複數個半導體晶片6各自之上表面7之配置,支持基板1之黏著層3之凸部4之前端面5之配置係以如各前端面5與各上表面7接觸時各前端面5之全部區域於相對向之上表面7之區域之內側相接觸之配置形成。Moreover, according to the arrangement of the respective
以於支持基板1之前端面5與保持於載體基板30之半導體晶片6之上表面7空開間隙且相對向之位置,各前端面5之全部區域在與特定之半導體晶片6之上表面7之範圍之區域相等或者較其為內側之區域與上表面7接觸的方式,預先藉由未圖示之位置決定裝置對準載體基板30與支持基板1之X軸方向及Y軸方向之位置關係後於Z軸方向上使上表面7與前端面5接近後接觸。The
此處,以載體基板黏著層31與底面37之間之因黏著產生之接著力小於支持基板1之前端面5與上表面7之間之因黏著產生之接著力之方式製作載體基板黏著層31,故若於使前端面5與上表面7接觸後使載體基板30與支持基板1相隔,則前端面5與上表面7之間之因黏著產生之接著力大於底面37與載體基板黏著層31之間之因黏著產生之接著,因此,底面37自載體基板黏著層31剝離,半導體晶片6保持於支持基板1。藉此,能夠以各前端面5之全部區域在與特定之半導體晶片6之上表面7之範圍之區域相等或者較其為內側之區域與上表面7接觸之方式將半導體晶片6保持於支持基板1。Here, the carrier
轉印步驟(S2)係使用雷射掀離法將保持於支持基板1之半導體晶片6轉印至被轉印基板9之被轉印面10之步驟。The transfer step (S2) is a step of transferring the
首先,使用例如於實施例3之圖7中說明之轉印裝置20使於半導體晶片保持步驟(S1)中保持半導體晶片6之支持基板1以半導體晶片6之底面37成為Z軸方向下側之方式保持於支持基板保持部22。First, for example, the
繼而,如圖9(B)所示,以被轉印基板9之被轉印面10成為Z軸方向上側之方式藉由被轉印基板保持部24保持被轉印基板9。然後以使被轉印基板9之被轉印面10上之特定之位置對準相對向之支持基板1所保持之特定之半導體晶片6之X軸方向及Y軸方向之位置之方式定位,藉由未圖示之雷射光照射部使雷射光25透過支持基板1之基板2且向保持於支持基板1之特定位置之半導體晶片6照射,而將特定之半導體晶片6轉印至被轉印基板9之被轉印面10之特定之位置。Then, as shown in FIG. 9(B), the transferred
藉由使用本轉印方法,可於不存在黏著層繞向半導體晶片6之側面8之狀態下轉印,因此,轉印時於半導體晶片6與黏著層3接觸之範圍內不易產生半導體晶片6離開黏著層3之時機之不一致,且轉印時之半導體晶片6之掉落姿態穩定,因此可高精度地將半導體晶片6轉印至被轉印基板9之被轉印面10之特定之位置。By using this transfer method, the transfer can be performed without the adhesive layer winding to the
又,於轉印步驟(S2)中,亦可使用與實施例1中說明之支持基板1相同構造之黏著層之被轉印基板9'代替被轉印基板9。In addition, in the transfer step (S2), the transferred
被轉印基板9'與支持基板1同樣地具有形成凸部之黏著層。凸部於前端面具有黏著性。藉由具有黏著性之前端面與半導體晶片6之要被轉印之側之面相接觸,可利用被轉印基板保持半導體晶片6。於本實施例中,凸部之排列不同於支持基板1,例如相鄰凸部之間距大於支持基板1之相鄰凸部之間距等。The substrate 9'to be transferred has an adhesive layer forming protrusions similarly to the supporting
藉此,可將被轉印基板9'作為新支持基板而高精度地轉印至其他被轉印基板或安裝基板。Thereby, it is possible to transfer the transferred substrate 9'as a new supporting substrate to another transferred substrate or a mounting substrate with high accuracy.
以上,對本發明之實施例進行了說明,但本發明並不限定於該等。例如,本發明之支持基板亦可為,黏著層之凸部之前端面之全部區域於與半導體晶片接觸時不僅較半導體晶片之最接近黏著層之面更內側之區域,還在僅與半導體晶片之最接近黏著層之面同等之區域與上述半導體晶片接觸。Above, the embodiments of the present invention have been described, but the present invention is not limited to these. For example, the support substrate of the present invention can also be that the entire area of the front end surface of the protruding portion of the adhesive layer is not only the area more inside than the surface of the semiconductor wafer closest to the adhesive layer when it is in contact with the semiconductor chip, but also only the area with the semiconductor chip. The same area as the surface closest to the adhesive layer is in contact with the semiconductor chip.
又,亦可為,本發明之支持基板之凸部具有複數個前端面,複數個前端面之全部區域於一個半導體晶片之最接近黏著層之面之區域之範圍內相接。In addition, it is also possible that the convex portion of the support substrate of the present invention has a plurality of front end surfaces, and all areas of the plurality of front end surfaces are in contact with each other within the area of the surface of a semiconductor chip closest to the adhesive layer.
又,本發明之支持基板之黏著層亦可存在於除凸部以外之部分。例如如圖10(A)(B)所示,於支持基板41之黏著層43之基板2側之相反側之面中,亦可存在不同於凸部44之前端面45之面46。此處圖10(A)係自黏著層43側觀察之支持基板41之俯視圖,圖10(B)係沿圖10(A)之d箭頭方向觀察之圖。In addition, the adhesive layer of the supporting substrate of the present invention may also exist in parts other than the convex portions. For example, as shown in FIG. 10(A)(B), on the surface of the
又,本發明之支持基板之黏著層43可不於整個範圍內具有黏著性,亦可僅於前端面45具有黏著性。In addition, the
又,本發明之支持基板亦可為不包含藉由被照射雷射光而分解產生氣體成分之材料而僅具有黏著性之黏著層。於該情形時,可於半導體晶片側設置包含藉由被照射雷射光而分解產生氣體成分之材料之犧牲層,亦可為半導體晶片之素材包含藉由被照射雷射光而分解產生氣體成分之材料。In addition, the supporting substrate of the present invention may also be an adhesive layer that does not include a material that decomposes to generate gas components by being irradiated with laser light, but has only adhesive properties. In this case, a sacrificial layer containing a material that decomposes to generate gas components by being irradiated with laser light can be provided on the semiconductor chip side, or the material of the semiconductor chip can include a material that decomposes to generate gas components by being irradiated with laser light .
又,只要本發明之轉印裝置之雷射光照射部能向任意位置照射雷射光即可,並不拘泥於實施例3之構成。例如,可使用多面鏡代替圖7所示之檢流計鏡27,亦可使用遮罩代替檢流計鏡27與fθ透鏡28。Moreover, as long as the laser light irradiating part of the transfer device of the present invention can irradiate laser light to any position, it is not limited to the configuration of the third embodiment. For example, a polygon mirror can be used instead of the
又,本發明之轉印裝置可為相對於使用圖7說明之實施例3之支持基板保持部22而言進而具有能夠向X軸方向及Y軸方向移動之移動部之支持基板保持部,亦可為如下構造,即,支持基板保持部22之移動部於保持支持基板1之狀態下向X軸方向及Y軸方向移動,使保持於支持基板1之任意半導體晶片6之位置對準自雷射光源26照射之雷射光25之位置後,照射雷射光25。In addition, the transfer device of the present invention may be a support substrate holding portion having a moving portion capable of moving in the X-axis direction and the Y-axis direction, compared to the support
又,使用圖9(A)說明之本發明之轉印方法之半導體晶片保持步驟(S1),只要半導體晶片6之上表面7與支持基板1之黏著層3之凸部4之前端面5能以特定之位置關係接觸即可,例如,亦可使用設置載體基板黏著層31之載體基板30且利用雷射掀離法而使半導體晶片6保持於支持基板1,該載體基板黏著層31發揮如下功能:藉由照射雷射光而產生氣體成分,藉此解除所保持之半導體晶片之保持狀態並對半導體晶片6賦予動能。Moreover, the semiconductor wafer holding step (S1) of the transfer method of the present invention described using FIG. 9(A), as long as the
又,使用圖9(A)說明之本發明之轉印方法之半導體晶片保持步驟(S1)亦可為,針對不使用載體基板30而藉由未圖示之固持裝置直接固持之半導體晶片6,以前端面5與上表面7接觸時成為如前端面5之全部區域於與相對向之上表面7之區域同等之區域或相對向之上表面7之區域之內側相接觸之位置關係之方式使半導體晶片6移動後,使支持基板1之前端面5與半導體晶片6之上表面7接觸,而使半導體晶片6保持於支持基板1。In addition, the semiconductor wafer holding step (S1) of the transfer method of the present invention described using FIG. 9(A) may also be for the
又,於本發明之轉印裝置及轉印方法中對被轉印基板使用具有與實施例1中說明之支持基板1相同之構造之被轉印基板時,被轉印基板之黏著層之凸部之排列可與支持基板之黏著層之凸部之排列相同。又,支持基板之前端面之數量可與被轉印基板之前端面之數量相同,亦可不同。Moreover, when the transfer substrate having the same structure as the
1:支持基板 2:基板 3:黏著層 4:凸部 5:前端面 6:半導體晶片 7:上表面 8:側面 8a:側面 9:被轉印基板 9':被轉印基板 10:被轉印面 11:支持基板 13:黏著層 15:前端面 16:區域 17:區域 18:照射範圍 20:轉印裝置 22:支持基板保持部 23:雷射光照射部 24:被轉印基板保持部 25:雷射光 26:雷射光源 27:檢流計鏡 28:fθ透鏡 29:移動部 30:載體基板 31:載體基板黏著層 37:底面 41:支持基板 43:黏著層 44:凸部 45:前端面 46:面 101:支持基板 102:基板 103:黏著層1: Support substrate 2: substrate 3: Adhesive layer 4: Convex 5: Front face 6: Semiconductor wafer 7: Upper surface 8: side 8a: side 9: Substrate to be transferred 9': substrate to be transferred 10: Surface to be transferred 11: Support substrate 13: Adhesive layer 15: Front face 16: area 17: area 18: Irradiation range 20: transfer device 22: Support substrate holding part 23: Laser light irradiation section 24: Transfer substrate holding part 25: Laser light 26: Laser light source 27: Galvanometer mirror 28: fθ lens 29: Mobile Department 30: Carrier substrate 31: Carrier substrate adhesive layer 37: Bottom 41: Support substrate 43: Adhesive layer 44: Convex 45: Front face 46: Noodles 101: Support substrate 102: substrate 103: Adhesive layer
圖1(A)、(B)係說明本發明之實施例1之半導體晶片之支持基板之圖。
圖2(A)~(D)係說明使用本發明之半導體晶片之支持基板之轉印方法之圖。
圖3係沿圖2(A)之b箭頭方向觀察之圖,且係說明本發明之實施例1之半導體晶片之支持基板之圖。
圖4係說明本發明之實施例2之半導體晶片之支持基板之圖,且係自與沿實施例1之圖2(A)之b箭頭方向相同之方向觀察之圖。
圖5(A)~(D)係說明使用整面具有均等厚度之黏著層之支持基板之轉印之圖。
圖6(A)、(B)係沿圖2(B)之c箭頭方向觀察之圖。
圖7係說明本發明之實施例3之轉印裝置之圖。
圖8係說明本發明之實施例4之轉印方法之流程圖。
圖9(A)、(B)係說明本發明之實施例4之轉印方法之圖。
圖10(A)、(B)係說明本發明之支持基板之其他形態之圖。1(A) and (B) are diagrams illustrating the supporting substrate of the semiconductor chip according to the first embodiment of the present invention.
2(A) to (D) are diagrams illustrating the transfer method of the supporting substrate using the semiconductor wafer of the present invention.
FIG. 3 is a view viewed in the direction of arrow b in FIG. 2(A), and is a view illustrating the support substrate of the semiconductor chip of the first embodiment of the present invention.
FIG. 4 is a diagram illustrating the support substrate of the semiconductor chip of the second embodiment of the present invention, and is a diagram viewed from the same direction as the direction of the arrow b in FIG. 2(A) of the first embodiment.
5(A)-(D) are diagrams illustrating the transfer of a support substrate with an adhesive layer of uniform thickness on the entire surface.
Figures 6(A) and (B) are diagrams viewed in the direction of arrow c in Figure 2(B).
Fig. 7 is a diagram illustrating the transfer device of the third embodiment of the present invention.
FIG. 8 is a flowchart illustrating the transfer method of
1:支持基板 1: Support substrate
2:基板 2: substrate
3:黏著層 3: Adhesive layer
4:凸部 4: Convex
5:前端面 5: Front face
6:半導體晶片 6: Semiconductor wafer
7:上表面 7: Upper surface
8:側面 8: side
9:被轉印基板 9: Substrate to be transferred
25:雷射光 25: Laser light
Claims (7)
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JP2019-024311 | 2019-02-14 |
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