TW202105585A - Semiconductor chip supporting substrate, transfer apparatus, and transfer method - Google Patents

Semiconductor chip supporting substrate, transfer apparatus, and transfer method Download PDF

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TW202105585A
TW202105585A TW109104342A TW109104342A TW202105585A TW 202105585 A TW202105585 A TW 202105585A TW 109104342 A TW109104342 A TW 109104342A TW 109104342 A TW109104342 A TW 109104342A TW 202105585 A TW202105585 A TW 202105585A
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semiconductor wafer
substrate
adhesive layer
transferred
semiconductor chip
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TWI837302B (en
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新井義之
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日商東麗工程股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages

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Abstract

Proposed are a semiconductor chip supporting substrate, a transfer apparatus, and a transfer method that enable high-precision transfer of semiconductor chips when the semiconductor chips are to be transferred from a supporting substrate to a transfer destination substrate by using a laser lift-off method. Specifically, this semiconductor chip supporting substrate has an adhesive layer on one surface, and holds semiconductor chips through the adhesive layer. When a laser beam is emitted toward the semiconductor chips from a side opposite to the side at which the semiconductor chips are held, the semiconductor-chip held state is released, and the semiconductor chips are biased. The surface, of the supporting substrate, which comes into contact with the semiconductor chips has projections formed of the adhesive layer. The projections each have a tacky leading end surface, and when the entire area of the leading end surface of the projection comes into contact with the corresponding semiconductor chip, the area comes into contact with a surface, of a semiconductor chip, closest to the adhesive layer such that the area is equivalent to the surface or the area falls within the inner side of the surface.

Description

半導體晶片之支持基板、轉印裝置及轉印方法Supporting substrate of semiconductor wafer, transfer device and transfer method

本發明係關於一種高精度且穩定地安裝半導體晶片之安裝方法及安裝裝置。The present invention relates to a mounting method and mounting device for mounting semiconductor chips with high precision and stability.

半導體晶片因成本降低而推進小型化,且一直在進行用以高精度地安裝小型化之半導體晶片之研究。尤其為了顯示器用,開發了稱為微LED(Luminescent Diode,發光二極體)之50 μm×50 μm以下之半導體晶片,要求以數μm之精度且高速地安裝微LED。The miniaturization of semiconductor wafers has been promoted due to cost reduction, and research has been conducted to mount miniaturized semiconductor wafers with high precision. Especially for displays, semiconductor chips of 50 μm×50 μm or less called micro LEDs (Luminescent Diodes) have been developed, and micro LEDs are required to be mounted with a precision of several μm and at a high speed.

專利文獻1中記載有藉由轉印方法而排除轉印時之空氣阻力之影響從而高精度地轉印、安裝LED晶片之技術,該轉印方法具備:被轉印基板配置步驟,其係在真空環境下於一面保持於轉印基板之LED晶片之與一面為相反側之面以存在間隙地對向之方式配置被轉印基板;及轉印步驟,其係藉由向轉印基板照射雷射光,而使LED晶片自轉印基板分離,並且向被轉印基板被賦予動能而轉印至被轉印基板。 先前技術文獻 專利文獻Patent Document 1 describes a technique for high-precision transfer and mounting of LED chips by eliminating the influence of air resistance during transfer by a transfer method. The transfer method includes: a step of arranging a substrate to be transferred, which is Under a vacuum environment, the substrate to be transferred is arranged on the surface of the LED chip held on one side of the transfer substrate on the opposite side with a gap; and the transfer step is performed by irradiating the transfer substrate with thunder The light is emitted to separate the LED chip from the transfer substrate, and is given kinetic energy to the transfer substrate to be transferred to the transfer substrate. Prior art literature Patent literature

專利文獻1:日本專利特開2018-60993號公報Patent Document 1: Japanese Patent Laid-Open No. 2018-60993

[發明所欲解決之問題][The problem to be solved by the invention]

於保持半導體晶片之支持基板中,多為例如於如圖5(A)所示之支持基板101之保持半導體晶片6之側之面具有均等厚度之包含黏著劑之黏著層103者。於此種具有黏著層103之支持基板101所保持之半導體晶片6與黏著層103之接著狀態下,例如存在如下可能性,即,為了使半導體晶片6接合於設置在基板102之黏著層103上而將半導體晶片6壓抵於黏著層103時,黏著層103變形,黏著層103亦會迴繞至半導體晶片之側面。圖5(A)中示出黏著層103迴繞至半導體晶片6之左側之側面8a之情況。Among the support substrates holding semiconductor chips, for example, the support substrate 101 shown in FIG. 5(A) has an adhesive layer 103 containing an adhesive with a uniform thickness on the surface of the support substrate 101 that holds the semiconductor chip 6. In the bonded state of the semiconductor chip 6 held by the support substrate 101 with the adhesive layer 103 and the adhesive layer 103, for example, there is the possibility of bonding the semiconductor chip 6 to the adhesive layer 103 provided on the substrate 102 When the semiconductor chip 6 is pressed against the adhesive layer 103, the adhesive layer 103 is deformed, and the adhesive layer 103 will also wrap around to the side of the semiconductor chip. FIG. 5(A) shows a situation where the adhesive layer 103 wraps around to the side 8a on the left side of the semiconductor chip 6.

於黏著層103迴繞至半導體晶片6之側面8a之狀態下,藉由專利文獻1中記載之方法,即,對於在真空環境下與支持基板101空開間隙地對向之被轉印基板9,使用雷射掀離法將保持於支持基板101之半導體晶片6轉印至被轉印基板9時,因迴繞至半導體晶片6之側面8a之黏著層103之影響,而如圖5(B)所示,於半導體晶片6與黏著層103接觸之面即上表面7與半導體晶片6之各側面8之間、或半導體晶片6之側面8a與其以外之側面8之間,該半導體晶片6之各部位自黏著層103離開之時機產生差異。因此,存在如下可能性,即,如圖5(C)所示,藉由雷射掀離法而讓半導體晶片6自支持基板101向被轉印基板9被賦予動能時半導體晶片6之姿態歪斜,如圖5(D)所示,對半導體晶片6轉印至被轉印基板9之精度產生不良影響。With the adhesive layer 103 rewinding to the side surface 8a of the semiconductor wafer 6, by the method described in Patent Document 1, that is, for the substrate 9 to be transferred facing the supporting substrate 101 with a gap in a vacuum environment, When using the laser lift-off method to transfer the semiconductor wafer 6 held on the supporting substrate 101 to the substrate 9 to be transferred, the adhesive layer 103 that wraps around to the side surface 8a of the semiconductor wafer 6 is affected, as shown in FIG. 5(B) Shown, between the upper surface 7 of the semiconductor chip 6 and the adhesive layer 103, that is, between the upper surface 7 and each side surface 8 of the semiconductor chip 6, or between the side surface 8a of the semiconductor chip 6 and the other side surfaces 8, each part of the semiconductor chip 6 The timing at which the self-adhesive layer 103 leaves is different. Therefore, there is a possibility that, as shown in FIG. 5(C), the posture of the semiconductor wafer 6 is distorted when kinetic energy is applied from the support substrate 101 to the substrate 9 to be transferred by the laser lift-off method. As shown in FIG. 5(D), it adversely affects the accuracy of transferring the semiconductor wafer 6 to the substrate 9 to be transferred.

鑒於上述問題,本發明之目的在於提出一種於使用雷射掀離法自支持基板向被轉印基板轉印半導體晶片時可高精度地轉印半導體晶片的半導體晶片之支持基板、轉印裝置及轉印方法。 [解決問題之技術手段]In view of the above-mentioned problems, the object of the present invention is to provide a support substrate, a transfer device and a semiconductor wafer that can transfer the semiconductor wafer with high precision when the semiconductor wafer is transferred from the support substrate to the substrate to be transferred using the laser lift-off method Transfer method. [Technical means to solve the problem]

為了解決上述問題,本發明之支持基板之特徵在於:其係半導體晶片之支持基板,於一面具有黏著層,經由上述黏著層保持半導體晶片,藉由自保持有上述半導體晶片之側之相反側向上述半導體晶片照射雷射光而解除上述半導體晶片之保持狀態,並且對上述半導體晶片賦予動能;且與上述半導體晶片接觸之側之面具有包含上述黏著層之凸部,上述凸部於前端面具有黏著性,上述凸部之上述前端面之全部區域於與上述半導體晶片接觸時,僅在與上述半導體晶片之最接近上述黏著層之面同等之區域或者較上述半導體晶片之最接近上述黏著層之面更內側之區域與上述半導體晶片接觸。In order to solve the above-mentioned problems, the supporting substrate of the present invention is characterized in that it is a supporting substrate of a semiconductor chip with an adhesive layer on one side, and the semiconductor chip is held by the adhesive layer, and the semiconductor chip is held by the side opposite to the side where the semiconductor chip is held. The semiconductor chip is irradiated with laser light to release the holding state of the semiconductor chip and impart kinetic energy to the semiconductor chip; and the surface on the side in contact with the semiconductor chip has a convex portion including the adhesive layer, and the convex portion has an adhesive on the front end surface When the entire area of the front end surface of the protrusion is in contact with the semiconductor chip, it is only in the area equivalent to the surface of the semiconductor chip closest to the adhesive layer or the surface of the semiconductor chip closest to the adhesive layer The inner region is in contact with the above-mentioned semiconductor wafer.

因能夠於半導體晶片之側面無黏著層之迴繞之狀態下進行雷射掀離,故而於半導體晶片與黏著層接觸之範圍內不易產生半導體晶片離開黏著層之時機之不一致,半導體晶片掉落至被轉印基板之姿態穩定,因此可高精度地進行轉印。Since the laser lift can be carried out without the rewinding of the adhesive layer on the side of the semiconductor chip, it is not easy to produce inconsistencies in the timing of the semiconductor chip leaving the adhesive layer within the contact range of the semiconductor chip and the adhesive layer, and the semiconductor chip will fall to the surface. The posture of the transfer substrate is stable, so the transfer can be performed with high precision.

又,亦可使用具有以下特徵之半導體晶片之支持基板,即,上述凸部之上述前端面之全部區域於與上述半導體晶片接觸時,僅在包含上述半導體晶片之最接近上述黏著層之面之中心或者重心的較上述半導體晶片之最接近上述黏著層之面更內側之區域與上述半導體晶片接觸。In addition, it is also possible to use a support substrate of a semiconductor chip having the following characteristics, that is, when the entire area of the front end surface of the convex portion is in contact with the semiconductor chip, only the surface of the semiconductor chip that is closest to the adhesive layer is included. The center or the center of gravity is in contact with the semiconductor chip in the inner side of the surface of the semiconductor chip closest to the adhesive layer.

藉由將與半導體晶片之黏著層接觸之區域形成為包含半導體晶片之中心或者重心之較小之區域,因接觸區域較小而使半導體晶片離開黏著層之時機更不易產生不一致,除此以外,因接觸區域包含中心或者重心部分而使半導體晶片掉落至第2支持基板上之姿態更穩定,因此可高精度地進行轉印。By forming the area in contact with the adhesive layer of the semiconductor chip into a smaller area including the center or center of gravity of the semiconductor chip, the smaller contact area makes the timing of the semiconductor chip away from the adhesive layer less likely to be inconsistent. In addition, Since the contact area includes the center or the center of gravity, the posture of the semiconductor wafer falling on the second support substrate is more stable, so that the transfer can be performed with high accuracy.

又,亦可使用具有如下特徵之半導體晶片之支持基板,即,上述凸部之上述前端面為圓形。In addition, it is also possible to use a semiconductor wafer support substrate having the characteristic that the front end surface of the convex portion is circular.

藉由將與半導體晶片之黏著層接觸之區域形成為圓形之區域,可向整個前端面高效率地照射雷射光。By forming the area in contact with the adhesive layer of the semiconductor chip into a circular area, the entire front end surface can be irradiated with laser light efficiently.

本發明之轉印裝置之特徵在於:其係使用雷射光轉印半導體晶片者,且具有:支持基板,其保持上述半導體晶片之一面;支持基板保持部,其保持上述支持基板;雷射光照射部,其向上述半導體晶片照射雷射光;及被轉印基板保持部,其保持被轉印有上述半導體晶片之被轉印基板;且上述支持基板於保持上述半導體晶片之側之面具有包含黏著層之凸部,上述凸部於前端面具有黏著性,上述凸部之上述前端面之全部區域於與上述半導體晶片接觸時,僅在與上述半導體晶片之最接近上述黏著層之面同等之區域或者較上述半導體晶片之最接近上述黏著層之面更內側之區域與上述半導體晶片接觸,在以保持於上述支持基板之上述半導體晶片之與上述支持基板側為相反側之面和上述被轉印基板之被轉印有上述半導體晶片之側之面設有空間地對向之方式利用上述被轉印基板保持部保持上述被轉印基板的狀態下,藉由從上述雷射光照射部自上述支持基板之保持有上述半導體晶片之側之相反側向上述半導體晶片照射雷射光而解除上述半導體晶片之保持狀態,且藉由於自上述黏著層觀察時之上述半導體晶片側對上述半導體晶片賦予動能而將上述半導體晶片轉印至上述被轉印基板。The transfer device of the present invention is characterized in that it uses laser light to transfer a semiconductor wafer, and has: a support substrate that holds one surface of the semiconductor wafer; a support substrate holding portion that holds the support substrate; and a laser light irradiation portion , Which irradiates the semiconductor wafer with laser light; and a transferred substrate holding portion that holds the transferred substrate to which the semiconductor wafer is transferred; and the support substrate has an adhesive layer on its surface holding the semiconductor wafer The convex portion, the convex portion has adhesiveness on the front end surface, and the entire area of the front end surface of the convex portion when in contact with the semiconductor chip is only in the same area as the surface of the semiconductor chip closest to the adhesive layer or The area on the inner side of the semiconductor wafer closest to the adhesive layer is in contact with the semiconductor wafer, and the surface of the semiconductor wafer held on the support substrate opposite to the support substrate side and the transfer substrate The surface on the side on which the semiconductor wafer is transferred is spaced to face each other. In a state where the substrate to be transferred is held by the substrate holding portion to be transferred, the support substrate is removed from the laser light irradiating portion. The side opposite to the side where the semiconductor chip is held is irradiated with laser light to the semiconductor chip to release the held state of the semiconductor chip, and the semiconductor chip is provided with kinetic energy due to the side of the semiconductor chip when viewed from the adhesive layer. The semiconductor wafer is transferred to the substrate to be transferred.

藉由使用本發明之轉印裝置,能夠於半導體晶片之側面無黏著層之迴繞之狀態下進行雷射掀離,因此,於半導體晶片與黏著層接觸之範圍內不易產生半導體晶片離開黏著層之時機之不一致,半導體晶片掉落至被轉印基板之姿態穩定,因此可高精度地進行轉印。By using the transfer device of the present invention, the laser lift can be carried out without the rewinding of the adhesive layer on the side of the semiconductor chip. Therefore, it is not easy to cause the semiconductor chip to leave the adhesive layer within the contact range of the semiconductor chip and the adhesive layer. The timing is not consistent, and the posture of the semiconductor wafer falling to the substrate to be transferred is stable, so the transfer can be performed with high precision.

又,於本發明之轉印裝置中,其特徵亦可在於:上述被轉印基板於被轉印有上述半導體晶片之側之面具有包含黏著層之凸部,上述被轉印基板之上述凸部於前端面具有黏著性,上述被轉印基板之上述凸部之上述前端面之全部區域於與上述半導體晶片接觸時,僅在與上述半導體晶片之最接近上述黏著層之面同等之區域或者較上述半導體晶片之最接近上述黏著層之面更內側之區域與上述半導體晶片接觸。Furthermore, in the transfer device of the present invention, the transfer device may be characterized in that the substrate to be transferred has a convex portion including an adhesive layer on the surface on the side to which the semiconductor wafer is transferred, and the convex portion of the substrate to be transferred The portion has adhesiveness on the front end surface. When the entire area of the front end surface of the convex portion of the substrate to be transferred is in contact with the semiconductor wafer, only the area equivalent to the surface of the semiconductor wafer closest to the adhesive layer or A region on the inner side of the surface of the semiconductor chip closest to the adhesive layer is in contact with the semiconductor chip.

藉由使用與支持基板同樣具有不會迴繞至半導體晶片之側面之形狀之黏著層之被轉印基板,而即便將該被轉印基板作為支持基板進而轉印至其他被轉印基板或安裝基板,亦可高精度地轉印。By using a substrate to be transferred that has an adhesive layer that does not wrap around to the side surface of the semiconductor wafer as the support substrate, even if the substrate to be transferred is used as a support substrate and then transferred to other substrates to be transferred or mounting substrates , Can also transfer with high precision.

本發明之轉印方法之特徵在於:其係使用雷射光轉印半導體晶片之轉印方法,且具備:半導體晶片保持步驟,其係使支持基板之黏著層保持上述半導體晶片之一面;以及轉印步驟,其係在上述支持基板之上述黏著層所保持之上述半導體晶片之與上述支持基板側為相反側之面和被轉印基板之被轉印有上述半導體晶片之側之面設有空間地對向之位置配置上述被轉印基板,且藉由自上述支持基板之保持有上述半導體晶片之側之相反側向上述半導體晶片照射雷射光而解除上述半導體晶片之利用上述支持基板之保持狀態,並且藉由向上述被轉印基板對上述半導體晶片賦予動能而將上述半導體晶片轉印至上述被轉印基板;且上述支持基板之特徵在於:於保持上述半導體晶片之側之面具有包含上述黏著層之凸部,上述凸部於前端面具有黏著性,上述凸部之上述前端面之全部區域於與上述半導體晶片接觸時,僅在與上述半導體晶片之最接近上述黏著層之面同等之區域或者較上述半導體晶片之最接近上述黏著層之面更內側之區域與上述半導體晶片接觸;且上述半導體晶片保持步驟係於上述支持基板之上述黏著層之上述凸部之上述前端面貼附上述半導體晶片之上述一面而使上述半導體晶片保持於上述支持基板。The transfer method of the present invention is characterized in that it is a transfer method that uses laser light to transfer a semiconductor wafer, and includes: a semiconductor wafer holding step in which an adhesive layer of a support substrate holds one side of the semiconductor wafer; and transfer The step is to provide a space on the surface of the semiconductor wafer held by the adhesive layer of the support substrate on the side opposite to the support substrate side and the surface of the substrate to be transferred on the side where the semiconductor wafer is transferred. The substrate to be transferred is arranged at an opposing position, and the semiconductor wafer is released from the holding state of the semiconductor wafer by the support substrate by irradiating the semiconductor wafer with laser light from the side opposite to the side on which the semiconductor wafer is held of the support substrate, And by imparting kinetic energy to the semiconductor wafer to the substrate to be transferred, the semiconductor wafer is transferred to the substrate to be transferred; and the supporting substrate is characterized in that the surface on the side that holds the semiconductor wafer includes the adhesive The convex part of the layer, the convex part has adhesiveness on the front end surface, and the entire area of the front end surface of the convex part when in contact with the semiconductor chip is only in the same area as the surface of the semiconductor chip closest to the adhesive layer Or a region on the inner side of the semiconductor chip closest to the adhesive layer is in contact with the semiconductor chip; and the semiconductor chip holding step is to attach the semiconductor to the front end surface of the convex portion of the adhesive layer of the support substrate The semiconductor wafer is held by the support substrate on the one side of the wafer.

因於半導體晶片之側面無黏著層之迴繞之狀態下進行雷射掀離,故而於半導體晶片與黏著層接觸之範圍內不易產生半導體晶片離開黏著層之時機之不一致,因此半導體晶片落向被轉印基板之姿態穩定,因此可高精度地轉印。Since the laser lift is performed in the state where there is no rewinding of the adhesive layer on the side of the semiconductor chip, it is not easy to produce inconsistencies in the timing of the semiconductor chip leaving the adhesive layer within the contact area of the semiconductor chip and the adhesive layer, so the semiconductor chip is turned and dropped. The posture of the printed circuit board is stable, so it can transfer with high precision.

又,本發明之轉印方法之特徵亦可在於:上述被轉印基板於上述被轉印基板之被轉印有上述半導體晶片之側之面具有包含黏著層之凸部,上述被轉印基板之上述凸部之前端面具有黏著性,上述被轉印基板之上述凸部之上述前端面之全部區域於與上述半導體晶片接觸時,僅在與上述半導體晶片之最接近上述黏著層之面同等之區域或者較上述半導體晶片之最接近上述黏著層之面更內側之區域與上述半導體晶片接觸。In addition, the transfer method of the present invention may also be characterized in that the substrate to be transferred has a convex portion including an adhesive layer on the surface of the substrate to be transferred on the side where the semiconductor wafer is transferred, and the substrate to be transferred The front end surface of the convex portion has adhesiveness, and the entire area of the front end surface of the convex portion of the substrate to be transferred, when in contact with the semiconductor wafer, is only equivalent to the surface of the semiconductor wafer closest to the adhesive layer A region or a region on the inner side of the surface of the semiconductor chip closest to the adhesive layer is in contact with the semiconductor chip.

藉由使用與支持基板同樣具有不會迴繞至半導體晶片之側面之形狀之黏著層之被轉印基板,即便進而轉印至其他被轉印基板或安裝基板,亦可高精度地轉印。 [發明之效果]By using a substrate to be transferred that has an adhesive layer in a shape that does not wrap around the side surface of the semiconductor wafer as the support substrate, even if it is transferred to another substrate to be transferred or a mounting substrate, the transfer can be performed with high precision. [Effects of Invention]

藉由使用本發明之半導體晶片之支持基板、轉印裝置及轉印方法,於使用雷射掀離法自支持基板將半導體晶片轉印至被轉印基板時,可防止因支持基板之黏著層迴繞至半導體晶片之側面所致之半導體晶片向被轉印基板被賦予動能時之半導體晶片之姿態之紊亂,從而高精度地轉印半導體晶片。By using the semiconductor wafer support substrate, transfer device and transfer method of the present invention, when the semiconductor wafer is transferred from the support substrate to the substrate to be transferred using the laser lift-off method, the adhesion layer of the support substrate can be prevented. Disturbance of the attitude of the semiconductor wafer when the semiconductor wafer is given kinetic energy to the substrate to be transferred caused by the winding to the side surface of the semiconductor wafer, so that the semiconductor wafer can be transferred with high precision.

使用圖式對本發明之半導體晶片之支持基板、轉印裝置及轉印方法之實施形態進行說明。 實施例1The embodiments of the semiconductor wafer support substrate, transfer device, and transfer method of the present invention will be described using figures. Example 1

將本發明之半導體晶片之支持基板之實施例1之實施形態示於圖1。圖1(A)係實施例1之半導體晶片之支持基板即支持基板1之俯視圖,圖1(B)係沿圖1(A)之a箭頭方向觀察之圖。支持基板1具有例如包含如SiO2 或藍寶石般使雷射光透過之素材之平板即基板2以及例如包含如聚醯亞胺、聚矽氧、二甲基聚矽氧烷(PDMS)般具有黏著性之素材之黏著層3。The embodiment of the first embodiment of the supporting substrate for the semiconductor wafer of the present invention is shown in FIG. 1. FIG. 1(A) is a plan view of the supporting substrate 1 of the semiconductor chip of the embodiment 1, and FIG. 1(B) is a view viewed in the direction of arrow a in FIG. 1(A). The supporting substrate 1 has, for example , a flat plate that contains a material such as SiO 2 or sapphire that allows laser light to pass through, that is, a substrate 2, and has adhesive properties such as polyimide, polysiloxane, and dimethylpolysiloxane (PDMS). Adhesive layer of the material 3.

黏著層3於本實施例中例如為包含感光性材料之聚醯亞胺或聚矽氧,具有藉由被照射雷射光而分解產生氣體成分之性質。黏著層3具有如下功能,即,使雷射光從未圖示之雷射光照射部自支持基板1之基板2側透過基板2並朝向藉由與黏著層3接觸而保持於支持基板1之半導體晶片6照射時黏著層3之聚合物因被分解而氣體化,藉此解除利用支持基板1對半導體晶片6之保持狀態並且對半導體晶片6賦予動能。藉由具有持有此種功能之黏著層3,可藉由雷射掀離法轉印保持於支持基板1之半導體晶片6。In this embodiment, the adhesive layer 3 is, for example, polyimide or polysiloxane containing a photosensitive material, and has the property of decomposing to generate gas components by being irradiated with laser light. The adhesive layer 3 has the function of making the laser light irradiating part (not shown) of the laser light pass through the substrate 2 from the substrate 2 side of the support substrate 1 and face the semiconductor chip held on the support substrate 1 by contacting the adhesive layer 3 6 During irradiation, the polymer of the adhesive layer 3 is decomposed and gasified, thereby releasing the holding state of the semiconductor wafer 6 by the support substrate 1 and imparting kinetic energy to the semiconductor wafer 6. With the adhesive layer 3 having such a function, the semiconductor chip 6 held on the support substrate 1 can be transferred by the laser lift-off method.

黏著層3設置於基板2之一面,於基板2之該一面形成凸部形狀之複數個凸部4。如圖1(B)所示,本實施例之支持基板1於基板2上除凸部4以外之區域未設置黏著層3。此種黏著層3可例如於使用狹縫式塗佈機等將構成黏著層3之黏著劑在基板2上以均等之厚度塗佈於整個面後,使用光微影法等去除除凸部4以外之黏著層3而形成,亦可藉由噴墨法於基板2上形成黏著層3之圖案後形成凸部4,亦可藉由其他方法形成黏著層3。The adhesive layer 3 is disposed on one surface of the substrate 2, and a plurality of convex portions 4 in the shape of convex portions are formed on the one surface of the substrate 2. As shown in FIG. 1(B), the supporting substrate 1 of this embodiment is not provided with an adhesive layer 3 on the substrate 2 except for the protrusions 4. Such an adhesive layer 3 can be used, for example, after the adhesive constituting the adhesive layer 3 is coated on the substrate 2 with a uniform thickness on the entire surface using a slit coater or the like, and then the convex-removing part 4 can be removed by photolithography or the like. The adhesive layer 3 other than that is formed, and the pattern of the adhesive layer 3 may be formed on the substrate 2 by an inkjet method to form the protrusions 4, or the adhesive layer 3 may be formed by other methods.

圖2(A)表示自與圖1(A)之a箭頭方向相同之方向觀察保持有半導體晶片6之支持基板1之圖。又,圖3係沿圖2(A)之b箭頭方向觀察之圖,表示支持基板1之前端面5與1個半導體晶片6接觸之範圍。如圖2(A)及圖3之影線部所示,各凸部4之前端面5之全部區域於與半導體晶片6接觸時僅在半導體晶片6之最接近黏著層3之面即上表面7之內側之區域與半導體晶片6接觸。即,於支持基板1保持半導體晶片6時,半導體晶片6僅前端面5與黏著層3接觸,與半導體晶片6接觸之各前端面5之全部區域與半導體晶片6接觸。藉由前端面5之全部區域與半導體晶片6之最接近黏著層3之面即上表面7之內側之區域接觸,而讓支持基板1保持半導體晶片6。FIG. 2(A) shows a view of the support substrate 1 holding the semiconductor wafer 6 when viewed from the same direction as the direction of arrow a in FIG. 1(A). 3 is a view viewed in the direction of arrow b in FIG. 2(A), showing the range where the front end surface 5 of the support substrate 1 is in contact with one semiconductor wafer 6. 2(A) and the hatched portion of FIG. 3, the entire area of the front end surface 5 of each convex portion 4 when in contact with the semiconductor chip 6 is only on the surface of the semiconductor chip 6 that is closest to the adhesive layer 3, that is, the upper surface 7. The area on the inner side is in contact with the semiconductor chip 6. That is, when the support substrate 1 holds the semiconductor wafer 6, only the front end surface 5 of the semiconductor wafer 6 is in contact with the adhesive layer 3, and the entire area of each front end surface 5 in contact with the semiconductor wafer 6 is in contact with the semiconductor wafer 6. The support substrate 1 holds the semiconductor chip 6 by contacting the entire area of the front end surface 5 with the surface of the semiconductor chip 6 that is closest to the adhesive layer 3, that is, the area inside the upper surface 7.

此處,前端面5之全部區域相較於與前端面5接觸之半導體晶片6之上表面7之區域位於內側,因此,即便因為了使半導體晶片6保持於支持基板1而將半導體晶片6壓抵於黏著層3導致黏著層3變形,亦不存在黏著層3向半導體晶片6之側面8之迴繞。Here, the entire area of the front end surface 5 is located inside compared to the area of the upper surface 7 of the semiconductor wafer 6 in contact with the front end surface 5. Therefore, even if the semiconductor wafer 6 is held on the support substrate 1, the semiconductor wafer 6 is pressed Abutting against the adhesive layer 3 causes the adhesive layer 3 to deform, and there is no rewinding of the adhesive layer 3 to the side surface 8 of the semiconductor chip 6.

藉由使用本實施例之支持基板1,即便如圖2(B)所示,利用未圖示之雷射光照射部使雷射光自支持基板1之基板2側透過基板2並朝向藉由與黏著層3接觸而保持於支持基板1之半導體晶片6照射至前端面5整體,而使半導體晶片6自黏著層3剝離並且對半導體晶片6賦予動能,於支持基板1之上表面7與黏著層3接觸之範圍內亦不會產生半導體晶片6離開黏著層3之時機之偏差,而是如圖2(C)所示,半導體晶片6之掉落姿態穩定,如圖2(D)所示,可高精度地轉印至被轉印基板9上。By using the support substrate 1 of the present embodiment, even as shown in FIG. 2(B), the laser light irradiating part is used to make the laser light pass through the substrate 2 from the substrate 2 side of the support substrate 1 and face to pass and adhere The semiconductor wafer 6 held on the support substrate 1 in contact with the layer 3 is irradiated to the entire front end surface 5 to peel off the semiconductor wafer 6 from the adhesive layer 3 and impart kinetic energy to the semiconductor wafer 6 on the upper surface 7 of the support substrate 1 and the adhesive layer 3 There will be no deviation in the timing of the semiconductor chip 6 leaving the adhesive layer 3 within the contact range, but as shown in Fig. 2(C), the falling attitude of the semiconductor chip 6 is stable, as shown in Fig. 2(D). It is transferred to the substrate 9 to be transferred with high precision.

又,本發明之支持基板1亦可為具有前端面5之支持基板1,該前端面5係當支持基板1保持有半導體晶片6時,前端面5之區域與半導體晶片6之最接近黏著層3之面即上表面7之包含中心或者重心之區域相接觸。藉由使用具有此種前端面5之支持基板1且利用雷射掀離法將半導體晶片6轉印至被轉印基板9,而因前端面之全部區域與上表面7之包含中心或者重心之區域相接觸,使得圖2(B)至圖2(C)中當半導體晶片6離開黏著層3時半導體晶片6之掉落姿態更穩定,因此,較前端面5之全部區域與不包含半導體晶片6之中心或者重心之區域接著之實例而言可更高精度地轉印。又,若前端面5與上表面7之中心或者重心大致一致則更佳。 實施例2In addition, the support substrate 1 of the present invention can also be a support substrate 1 having a front end surface 5, which is the closest adhesive layer between the front end surface 5 and the semiconductor chip 6 when the support substrate 1 holds the semiconductor chip 6 The surfaces of 3 are in contact with the area containing the center or the center of gravity of the upper surface 7. By using the support substrate 1 with such a front end surface 5 and using the laser lift-off method to transfer the semiconductor wafer 6 to the substrate 9 to be transferred, the entire area of the front end surface and the upper surface 7 include the center or the center of gravity. Areas are in contact, so that when the semiconductor chip 6 leaves the adhesive layer 3 in Figs. 2(B) to 2(C), the falling attitude of the semiconductor chip 6 is more stable. Therefore, compared to the entire area of the front end surface 5 and not including the semiconductor chip The center of 6 or the area of the center of gravity can be transferred with higher precision in the following example. Moreover, it is more preferable if the center or the center of gravity of the front end surface 5 and the upper surface 7 are substantially the same. Example 2

利用圖4對本發明之半導體晶片之支持基板之實施例2之半導體晶片之支持基板即支持基板11之實施形態進行說明。圖4與實施例1中說明之沿圖2(A)之b箭頭方向觀察同樣地表示前端面15與上表面7之大小與位置之關係。支持基板11之黏著層13之前端面15具有圓形之區域,且在半導體晶片6之上表面7之區域之內側,前端面15之全部區域與上表面7接觸。因前端面15具有圓形之區域,故如圖2(B)所示於藉由未圖示之雷射光照射部自支持基板11側向半導體晶片6照射雷射光時,可效率較佳地僅對前端面15之區域高效地照射雷射光。The embodiment of the supporting substrate 11 that is the supporting substrate of the semiconductor chip of the second embodiment of the supporting substrate of the semiconductor chip of the present invention will be described with reference to FIG. 4. Fig. 4 shows the relationship between the size and position of the front end surface 15 and the upper surface 7 as viewed in the direction of arrow b in Fig. 2(A) as described in the first embodiment. The front end surface 15 of the adhesive layer 13 of the support substrate 11 has a circular area, and the entire area of the front end surface 15 is in contact with the upper surface 7 inside the area of the upper surface 7 of the semiconductor chip 6. Since the front end surface 15 has a circular area, as shown in FIG. 2(B), when the laser light is irradiated from the support substrate 11 side to the semiconductor chip 6 by the laser light irradiation part (not shown), the efficiency is only better. The area of the front end surface 15 is irradiated with laser light efficiently.

若前端面15之區域之形狀為矩形,則當於使用圓形之雷射光之情形時欲向整個前端面15之區域照射雷射光時,會向包含矩形之前端面15之區域之圓形之範圍照射雷射光。將該狀態示於圖6。圖6(A)係沿圖2(B)之c箭頭方向觀察之圖。於圖6(A)中,雷射光之照射範圍18為包含黏著層13之前端面15之整個區域之圓形之區域,因此,除矩形之前端面15之區域以外之區域16亦被照射到雷射光。區域16包含半導體晶片6之上表面7之一部分之區域,因此有半導體晶片6被照射到雷射光而半導體晶片6受到損害之可能性。圖6(B)表示半導體晶片6之上表面7中之因被照射圓形之雷射光而有可能受到損害之區域17之範圍。If the shape of the area of the front end surface 15 is rectangular, when a circular laser light is used to irradiate the entire area of the front end surface 15 with laser light, the area including the front end surface 15 of the rectangle will be applied to the circular area Irradiate laser light. This state is shown in FIG. 6. Fig. 6(A) is a view viewed in the direction of arrow c in Fig. 2(B). In FIG. 6(A), the irradiation range 18 of the laser light is a circular area including the entire area of the front end surface 15 of the adhesive layer 13. Therefore, the area 16 except for the area of the rectangular front end surface 15 is also irradiated to the laser light . The area 16 includes a part of the upper surface 7 of the semiconductor wafer 6, so there is a possibility that the semiconductor wafer 6 is irradiated with laser light and the semiconductor wafer 6 is damaged. FIG. 6(B) shows the range of the area 17 on the upper surface 7 of the semiconductor wafer 6 that may be damaged by the circular laser light.

相對於此,藉由使用本實施例之支持基板11,可僅向黏著層13之前端面15之全部區域高效率地照射圓形之雷射光,因此,可減輕對半導體晶片6之損害。 實施例3In contrast, by using the support substrate 11 of this embodiment, only the entire area of the front end surface 15 of the adhesive layer 13 can be irradiated with circular laser light efficiently, and therefore, damage to the semiconductor chip 6 can be reduced. Example 3

使用圖7對本發明之轉印裝置之一例進行說明。本發明之實施例3之轉印裝置20具有支持基板1、支持基板保持部22、雷射光照射部23、被轉印基板保持部24。An example of the transfer device of the present invention will be described with reference to FIG. 7. The transfer device 20 of the third embodiment of the present invention includes a support substrate 1, a support substrate holding portion 22, a laser light irradiation portion 23, and a transfer substrate holding portion 24.

支持基板1與實施例1中使用圖1進行說明之支持基板1相同。The support substrate 1 is the same as the support substrate 1 described with reference to FIG. 1 in the first embodiment.

支持基板保持部22具有開口,將預先保持有半導體晶片6之支持基板1以保持半導體晶片6之側朝向Z軸方向下側之方式保持。此時,以如至少保持於支持基板1之半導體晶片6相對於Z軸方向包含於支持基板保持部22之開口範圍之位置關係,由支持基板保持部22保持支持基板1。藉此,自雷射光照射部23產生之雷射光25可經由支持基板保持部22之開口,照射至保持於支持基板保持部22之支持基板1所保持之半導體晶片6。The support substrate holding portion 22 has an opening, and holds the support substrate 1 holding the semiconductor wafer 6 in advance so that the side holding the semiconductor wafer 6 faces the lower side in the Z-axis direction. At this time, the support substrate 1 is held by the support substrate holding portion 22 in such a positional relationship that at least the semiconductor wafer 6 held on the support substrate 1 is included in the opening range of the support substrate holding portion 22 with respect to the Z-axis direction. Thereby, the laser light 25 generated from the laser light irradiation part 23 can be irradiated to the semiconductor wafer 6 held by the support substrate 1 held by the support substrate holding part 22 through the opening of the support substrate holding part 22.

雷射光照射部23包含雷射光源26、檢流計鏡27、fθ透鏡。雷射光源26為照射雷射光25之光源,檢流計鏡27能夠二軸旋轉,且具有以任意角度反射雷射光25之功能。fθ透鏡28具有使來自檢流計鏡27之雷射光25於特定位置對焦之功能。The laser light irradiation unit 23 includes a laser light source 26, a galvanometer mirror 27, and an fθ lens. The laser light source 26 is a light source for irradiating the laser light 25. The galvanometer mirror 27 can rotate in two axes and has the function of reflecting the laser light 25 at any angle. The fθ lens 28 has a function of focusing the laser light 25 from the galvanometer mirror 27 at a specific position.

藉由該構成,雷射光照射部23自保持於支持基板保持部22之支持基板1之Z軸方向上部、即保持半導體晶片6之側之相反側將來自雷射光源26之雷射光25藉由檢流計鏡27與fθ透鏡28使雷射光25之焦點對準保持於支持基板1之任意半導體晶片6而照射。With this configuration, the laser light irradiation section 23 passes the laser light 25 from the laser light source 26 from the upper part of the support substrate 1 held in the support substrate holding section 22 in the Z-axis direction, that is, the side opposite to the side where the semiconductor chip 6 is held. The galvanometer mirror 27 and the fθ lens 28 align the focus of the laser light 25 on any semiconductor wafer 6 held on the support substrate 1 and irradiate it.

被轉印基板保持部24位於支持基板保持部22之Z軸方向下側,且以與支持基板1空開間隙地對向之方式保持被轉印基板9。被轉印基板保持部24具有能夠向X軸方向及Y軸方向移動之移動部29,可在相對於被保持在支持基板保持部22之支持基板1所保持之任意半導體晶片6為特定之X軸方向及Y軸方向之被轉印位置決定被轉印基板9之特定之位置。The transferred substrate holding portion 24 is located on the lower side of the supporting substrate holding portion 22 in the Z-axis direction, and holds the transferred substrate 9 so as to face the supporting substrate 1 with a gap. The substrate holding portion 24 to be transferred has a moving portion 29 capable of moving in the X-axis direction and the Y-axis direction, and can be set to a specific X relative to any semiconductor wafer 6 held by the support substrate 1 held by the support substrate holding portion 22 The transfer position in the axial direction and the Y-axis direction determines the specific position of the substrate 9 to be transferred.

藉由被轉印基板保持部24,以使被轉印基板9之被轉印面10上之特定之位置對準相對向之支持基板1所保持之特定之半導體晶片6之X軸方向及Y軸方向之位置之方式進行定位,藉由利用雷射光照射部23向保持於支持基板1之特定之位置之半導體晶片6照射雷射光25,而於被轉印基板9之被轉印面10之特定之位置轉印特定之半導體晶片6。The transferred substrate holding portion 24 aligns the specific position on the transferred surface 10 of the transferred substrate 9 with the X-axis direction and the Y-axis of the specific semiconductor wafer 6 held by the opposing support substrate 1 Positioning is performed by using the laser light irradiating section 23 to irradiate the semiconductor wafer 6 held at a specific position of the support substrate 1 with laser light 25, and the specific position of the transfer surface 10 of the substrate 9 to be transferred is irradiated with laser light 25 Position transfer of a specific semiconductor wafer 6.

藉由使用本轉印裝置20,如上所述,支持基板1具有不存在黏著層向半導體晶片6之側面之迴繞之形狀,因此,於半導體晶片6與黏著層接觸之範圍內不易產生半導體晶片6離開黏著層之時機之不一致,於轉印時半導體晶片6之掉落姿態穩定,因此,可於轉印基板9之被轉印面10之特定之位置高精度地轉印半導體晶片6。By using the transfer device 20, as described above, the support substrate 1 has a shape in which there is no rewinding of the adhesive layer to the side surface of the semiconductor chip 6. Therefore, it is not easy to produce the semiconductor chip 6 in the area where the semiconductor chip 6 contacts the adhesive layer. The timing of leaving the adhesive layer is inconsistent, and the falling posture of the semiconductor wafer 6 is stable during transfer. Therefore, the semiconductor wafer 6 can be transferred at a specific position on the transferred surface 10 of the transfer substrate 9 with high precision.

此處,實施例3之轉印裝置20亦可使用與支持基板1相同構造之被轉印基板9'作為被轉印基板9。Here, the transfer device 20 of the third embodiment can also use the transfer substrate 9 ′ having the same structure as the support substrate 1 as the transfer substrate 9.

被轉印基板9'與支持基板1同樣地具有形成凸部之黏著層。凸部於前端面具有黏著性。藉由具有黏著性之前端面與半導體晶片6要被轉印之側之面相接觸,而利用被轉印基板保持半導體晶片6。於本實施例中,凸部之排列不同於支持基板1,例如相鄰凸部之間距大於支持基板1之相鄰凸部之間距等。The substrate 9'to be transferred has an adhesive layer forming protrusions similarly to the supporting substrate 1. The convex part has adhesiveness on the front end surface. The semiconductor wafer 6 is held by the substrate to be transferred by contacting the front end surface of the adhesive with the surface of the semiconductor wafer 6 to be transferred. In this embodiment, the arrangement of the protrusions is different from that of the support substrate 1, for example, the distance between adjacent protrusions is greater than the distance between adjacent protrusions of the support substrate 1, and so on.

藉此,可將轉印有半導體晶片6之保持於被轉印基板保持部24之被轉印基板9'自被轉印基板保持部24取出,使被轉印基板9'向Z軸方向反轉,將於支持基板保持部22保持半導體晶片6之側朝向Z軸方向下側,將被轉印基板9'作為新支持基板藉由支持基板保持部22加以保持。Thereby, the transferred substrate 9'held by the transferred substrate holding portion 24 on which the semiconductor wafer 6 has been transferred can be taken out from the transferred substrate holding portion 24, and the transferred substrate 9'can be reversed in the Z-axis direction. Then, the side holding the semiconductor wafer 6 in the supporting substrate holding portion 22 faces the lower side in the Z-axis direction, and the transferred substrate 9 ′ is held as a new supporting substrate by the supporting substrate holding portion 22.

被轉印基板9使用與支持基板1為相同構造之被轉印基板9',藉此,不存在被轉印基板9'之黏著層向半導體晶片6之側面之迴繞,因此即便將被轉印基板9'作為支持基板進一步轉印至其他被轉印基板或安裝基板亦可高精度地轉印。 實施例4The transferred substrate 9 uses the transferred substrate 9'with the same structure as the support substrate 1, whereby there is no rewinding of the adhesive layer of the transferred substrate 9'to the side surface of the semiconductor wafer 6, so even if it will be transferred The substrate 9'serves as a supporting substrate and is further transferred to other substrates to be transferred or mounting substrates, which can also be transferred with high precision. Example 4

本發明之實施例4之轉印方法如圖8之流程所示,具有半導體晶片保持步驟(S1)以及轉印步驟(S2)。使用圖9、圖2對各步驟進行說明。As shown in the flow chart of FIG. 8, the transfer method of Embodiment 4 of the present invention has a semiconductor wafer holding step (S1) and a transfer step (S2). Each step will be described using FIG. 9 and FIG. 2.

半導體晶片保持步驟(S1)係使半導體晶片6保持於實施例1中說明之支持基板1之步驟。The semiconductor wafer holding step (S1) is a step of holding the semiconductor wafer 6 on the support substrate 1 described in the first embodiment.

於半導體晶片保持步驟(S1)中,針對半導體晶片6之最接近支持基板1之黏著層3之面即上表面7,以支持基板1之黏著層3之凸部4之具有黏著性之前端面5之全部區域進入上表面7之區域之內側之方式使前端面5與上表面7接觸,而使半導體晶片6保持於支持基板1。In the semiconductor chip holding step (S1), for the surface of the semiconductor chip 6 closest to the adhesive layer 3 of the support substrate 1, that is, the upper surface 7, to support the adhesive front end surface 5 of the protrusion 4 of the adhesive layer 3 of the substrate 1 The entire area enters the inner side of the area of the upper surface 7 so that the front end surface 5 is in contact with the upper surface 7 and the semiconductor chip 6 is held on the support substrate 1.

此處,於使複數個半導體晶片6同時保持於支持基板1之實例中,準備保持有半導體晶片6之載體基板30。載體基板30於一面具有載體基板黏著層31,例如如圖9(A)所示,藉由載體基板黏著層31與半導體晶片6之上表面7之相反側之面即底面37接觸而保持半導體晶片6。又,以載體基板黏著層31與底面37之間之因黏著產生之接著力小於支持基板1之前端面5與上表面7接觸時之因黏著產生之接著力之方式而製作載體基板黏著層31。Here, in an example in which a plurality of semiconductor wafers 6 are held on the support substrate 1 at the same time, a carrier substrate 30 holding the semiconductor wafers 6 is prepared. The carrier substrate 30 has a carrier substrate adhesive layer 31 on one side. For example, as shown in FIG. 9(A), the semiconductor wafer is held by contacting the carrier substrate adhesive layer 31 with the bottom surface 37 that is the opposite side of the upper surface 7 of the semiconductor chip 6 6. In addition, the carrier substrate adhesive layer 31 is fabricated in such a way that the adhesive force between the carrier substrate adhesive layer 31 and the bottom surface 37 is smaller than the adhesive force generated by the adhesive when the front end surface 5 of the support substrate 1 is in contact with the upper surface 7.

又,根據載體基板30上之複數個半導體晶片6各自之上表面7之配置,支持基板1之黏著層3之凸部4之前端面5之配置係以如各前端面5與各上表面7接觸時各前端面5之全部區域於相對向之上表面7之區域之內側相接觸之配置形成。Moreover, according to the arrangement of the respective upper surfaces 7 of the plurality of semiconductor chips 6 on the carrier substrate 30, the arrangement of the front end faces 5 of the protrusions 4 of the adhesive layer 3 of the support substrate 1 is such that the front end faces 5 are in contact with the upper faces 7 At this time, the entire area of each front end surface 5 is formed in an arrangement in which the inner side of the area facing the upper surface 7 is in contact.

以於支持基板1之前端面5與保持於載體基板30之半導體晶片6之上表面7空開間隙且相對向之位置,各前端面5之全部區域在與特定之半導體晶片6之上表面7之範圍之區域相等或者較其為內側之區域與上表面7接觸的方式,預先藉由未圖示之位置決定裝置對準載體基板30與支持基板1之X軸方向及Y軸方向之位置關係後於Z軸方向上使上表面7與前端面5接近後接觸。The front end surface 5 of the support substrate 1 and the upper surface 7 of the semiconductor wafer 6 held on the carrier substrate 30 are opposed to each other with a gap, and the entire area of each front end surface 5 is between the upper surface 7 of the specific semiconductor wafer 6 The area of the range is equal to or the inner area is in contact with the upper surface 7, and the positional relationship between the carrier substrate 30 and the support substrate 1 in the X-axis direction and the Y-axis direction is aligned by a position determining device not shown in advance. The upper surface 7 and the front end surface 5 are brought into contact with each other in the Z-axis direction.

此處,以載體基板黏著層31與底面37之間之因黏著產生之接著力小於支持基板1之前端面5與上表面7之間之因黏著產生之接著力之方式製作載體基板黏著層31,故若於使前端面5與上表面7接觸後使載體基板30與支持基板1相隔,則前端面5與上表面7之間之因黏著產生之接著力大於底面37與載體基板黏著層31之間之因黏著產生之接著,因此,底面37自載體基板黏著層31剝離,半導體晶片6保持於支持基板1。藉此,能夠以各前端面5之全部區域在與特定之半導體晶片6之上表面7之範圍之區域相等或者較其為內側之區域與上表面7接觸之方式將半導體晶片6保持於支持基板1。Here, the carrier substrate adhesive layer 31 is made in such a way that the adhesive force between the carrier substrate adhesive layer 31 and the bottom surface 37 is smaller than the adhesive force between the front end surface 5 and the upper surface 7 of the support substrate 1 due to the adhesion. Therefore, if the carrier substrate 30 is separated from the support substrate 1 after the front end surface 5 and the upper surface 7 are brought into contact, the adhesive force between the front end surface 5 and the upper surface 7 due to the adhesion is greater than that between the bottom surface 37 and the carrier substrate adhesive layer 31 Since there is a bond due to adhesion, the bottom surface 37 is peeled off from the carrier substrate adhesive layer 31, and the semiconductor chip 6 is held on the support substrate 1. Thereby, the semiconductor wafer 6 can be held on the support substrate in such a manner that the entire area of each front end surface 5 is in contact with the upper surface 7 of the specific semiconductor wafer 6 in an area equal to or inside the area of the upper surface 7 1.

轉印步驟(S2)係使用雷射掀離法將保持於支持基板1之半導體晶片6轉印至被轉印基板9之被轉印面10之步驟。The transfer step (S2) is a step of transferring the semiconductor wafer 6 held on the support substrate 1 to the transfer surface 10 of the transfer substrate 9 using a laser lift-off method.

首先,使用例如於實施例3之圖7中說明之轉印裝置20使於半導體晶片保持步驟(S1)中保持半導體晶片6之支持基板1以半導體晶片6之底面37成為Z軸方向下側之方式保持於支持基板保持部22。First, for example, the transfer device 20 described in FIG. 7 of the third embodiment is used to make the support substrate 1 holding the semiconductor wafer 6 in the semiconductor wafer holding step (S1) so that the bottom surface 37 of the semiconductor wafer 6 becomes the lower side in the Z-axis direction. The method is held in the support substrate holding portion 22.

繼而,如圖9(B)所示,以被轉印基板9之被轉印面10成為Z軸方向上側之方式藉由被轉印基板保持部24保持被轉印基板9。然後以使被轉印基板9之被轉印面10上之特定之位置對準相對向之支持基板1所保持之特定之半導體晶片6之X軸方向及Y軸方向之位置之方式定位,藉由未圖示之雷射光照射部使雷射光25透過支持基板1之基板2且向保持於支持基板1之特定位置之半導體晶片6照射,而將特定之半導體晶片6轉印至被轉印基板9之被轉印面10之特定之位置。Then, as shown in FIG. 9(B), the transferred substrate 9 is held by the transferred substrate holding portion 24 so that the transferred surface 10 of the transferred substrate 9 becomes the upper side in the Z-axis direction. Then, the specific position on the transferred surface 10 of the substrate 9 to be transferred is aligned with the position of the specific semiconductor chip 6 held by the opposite support substrate 1 in the X-axis direction and the Y-axis direction, by The not-shown laser light irradiating part allows the laser light 25 to pass through the substrate 2 of the support substrate 1 and irradiate the semiconductor wafer 6 held at a specific position of the support substrate 1 to transfer the specific semiconductor wafer 6 to the substrate 9 to be transferred. The specific position of the transferred surface 10.

藉由使用本轉印方法,可於不存在黏著層繞向半導體晶片6之側面8之狀態下轉印,因此,轉印時於半導體晶片6與黏著層3接觸之範圍內不易產生半導體晶片6離開黏著層3之時機之不一致,且轉印時之半導體晶片6之掉落姿態穩定,因此可高精度地將半導體晶片6轉印至被轉印基板9之被轉印面10之特定之位置。By using this transfer method, the transfer can be performed without the adhesive layer winding to the side surface 8 of the semiconductor wafer 6. Therefore, the semiconductor wafer 6 is not easily produced in the range where the semiconductor wafer 6 and the adhesive layer 3 are in contact during transfer. The timing of leaving the adhesive layer 3 is inconsistent, and the falling posture of the semiconductor wafer 6 during transfer is stable. Therefore, the semiconductor wafer 6 can be transferred to a specific position of the transfer surface 10 of the transfer substrate 9 with high accuracy.

又,於轉印步驟(S2)中,亦可使用與實施例1中說明之支持基板1相同構造之黏著層之被轉印基板9'代替被轉印基板9。In addition, in the transfer step (S2), the transferred substrate 9 ′ of the adhesive layer having the same structure as the support substrate 1 described in the first embodiment can also be used instead of the transferred substrate 9.

被轉印基板9'與支持基板1同樣地具有形成凸部之黏著層。凸部於前端面具有黏著性。藉由具有黏著性之前端面與半導體晶片6之要被轉印之側之面相接觸,可利用被轉印基板保持半導體晶片6。於本實施例中,凸部之排列不同於支持基板1,例如相鄰凸部之間距大於支持基板1之相鄰凸部之間距等。The substrate 9'to be transferred has an adhesive layer forming protrusions similarly to the supporting substrate 1. The convex part has adhesiveness on the front end surface. By contacting the front end surface of the adhesive with the surface of the semiconductor wafer 6 on the side to be transferred, the semiconductor wafer 6 can be held by the substrate to be transferred. In this embodiment, the arrangement of the protrusions is different from that of the support substrate 1, for example, the distance between adjacent protrusions is greater than the distance between adjacent protrusions of the support substrate 1, and so on.

藉此,可將被轉印基板9'作為新支持基板而高精度地轉印至其他被轉印基板或安裝基板。Thereby, it is possible to transfer the transferred substrate 9'as a new supporting substrate to another transferred substrate or a mounting substrate with high accuracy.

以上,對本發明之實施例進行了說明,但本發明並不限定於該等。例如,本發明之支持基板亦可為,黏著層之凸部之前端面之全部區域於與半導體晶片接觸時不僅較半導體晶片之最接近黏著層之面更內側之區域,還在僅與半導體晶片之最接近黏著層之面同等之區域與上述半導體晶片接觸。Above, the embodiments of the present invention have been described, but the present invention is not limited to these. For example, the support substrate of the present invention can also be that the entire area of the front end surface of the protruding portion of the adhesive layer is not only the area more inside than the surface of the semiconductor wafer closest to the adhesive layer when it is in contact with the semiconductor chip, but also only the area with the semiconductor chip. The same area as the surface closest to the adhesive layer is in contact with the semiconductor chip.

又,亦可為,本發明之支持基板之凸部具有複數個前端面,複數個前端面之全部區域於一個半導體晶片之最接近黏著層之面之區域之範圍內相接。In addition, it is also possible that the convex portion of the support substrate of the present invention has a plurality of front end surfaces, and all areas of the plurality of front end surfaces are in contact with each other within the area of the surface of a semiconductor chip closest to the adhesive layer.

又,本發明之支持基板之黏著層亦可存在於除凸部以外之部分。例如如圖10(A)(B)所示,於支持基板41之黏著層43之基板2側之相反側之面中,亦可存在不同於凸部44之前端面45之面46。此處圖10(A)係自黏著層43側觀察之支持基板41之俯視圖,圖10(B)係沿圖10(A)之d箭頭方向觀察之圖。In addition, the adhesive layer of the supporting substrate of the present invention may also exist in parts other than the convex portions. For example, as shown in FIG. 10(A)(B), on the surface of the adhesive layer 43 of the support substrate 41 on the opposite side of the substrate 2 side, there may be a surface 46 different from the front end surface 45 of the convex portion 44. Here, FIG. 10(A) is a plan view of the support substrate 41 viewed from the adhesive layer 43 side, and FIG. 10(B) is a view viewed in the direction of arrow d in FIG. 10(A).

又,本發明之支持基板之黏著層43可不於整個範圍內具有黏著性,亦可僅於前端面45具有黏著性。In addition, the adhesive layer 43 of the supporting substrate of the present invention may not have adhesiveness in the entire range, or may have adhesiveness only on the front end surface 45.

又,本發明之支持基板亦可為不包含藉由被照射雷射光而分解產生氣體成分之材料而僅具有黏著性之黏著層。於該情形時,可於半導體晶片側設置包含藉由被照射雷射光而分解產生氣體成分之材料之犧牲層,亦可為半導體晶片之素材包含藉由被照射雷射光而分解產生氣體成分之材料。In addition, the supporting substrate of the present invention may also be an adhesive layer that does not include a material that decomposes to generate gas components by being irradiated with laser light, but has only adhesive properties. In this case, a sacrificial layer containing a material that decomposes to generate gas components by being irradiated with laser light can be provided on the semiconductor chip side, or the material of the semiconductor chip can include a material that decomposes to generate gas components by being irradiated with laser light .

又,只要本發明之轉印裝置之雷射光照射部能向任意位置照射雷射光即可,並不拘泥於實施例3之構成。例如,可使用多面鏡代替圖7所示之檢流計鏡27,亦可使用遮罩代替檢流計鏡27與fθ透鏡28。Moreover, as long as the laser light irradiating part of the transfer device of the present invention can irradiate laser light to any position, it is not limited to the configuration of the third embodiment. For example, a polygon mirror can be used instead of the galvanometer mirror 27 shown in FIG. 7, and a mask can also be used instead of the galvanometer mirror 27 and the fθ lens 28.

又,本發明之轉印裝置可為相對於使用圖7說明之實施例3之支持基板保持部22而言進而具有能夠向X軸方向及Y軸方向移動之移動部之支持基板保持部,亦可為如下構造,即,支持基板保持部22之移動部於保持支持基板1之狀態下向X軸方向及Y軸方向移動,使保持於支持基板1之任意半導體晶片6之位置對準自雷射光源26照射之雷射光25之位置後,照射雷射光25。In addition, the transfer device of the present invention may be a support substrate holding portion having a moving portion capable of moving in the X-axis direction and the Y-axis direction, compared to the support substrate holding portion 22 of the third embodiment described using FIG. 7, or It may have a structure in which the moving part of the support substrate holding portion 22 moves in the X-axis direction and the Y-axis direction while holding the support substrate 1, so that the position of any semiconductor wafer 6 held on the support substrate 1 is aligned with the lightning. After the position of the laser light 25 irradiated by the light source 26, the laser light 25 is irradiated.

又,使用圖9(A)說明之本發明之轉印方法之半導體晶片保持步驟(S1),只要半導體晶片6之上表面7與支持基板1之黏著層3之凸部4之前端面5能以特定之位置關係接觸即可,例如,亦可使用設置載體基板黏著層31之載體基板30且利用雷射掀離法而使半導體晶片6保持於支持基板1,該載體基板黏著層31發揮如下功能:藉由照射雷射光而產生氣體成分,藉此解除所保持之半導體晶片之保持狀態並對半導體晶片6賦予動能。Moreover, the semiconductor wafer holding step (S1) of the transfer method of the present invention described using FIG. 9(A), as long as the upper surface 7 of the semiconductor wafer 6 and the front end surface 5 of the protrusion 4 of the adhesive layer 3 of the support substrate 1 can be Contact with a specific positional relationship is sufficient. For example, a carrier substrate 30 provided with a carrier substrate adhesive layer 31 can also be used and a laser lift method is used to hold the semiconductor chip 6 on the support substrate 1. The carrier substrate adhesive layer 31 performs the following functions : The gas component is generated by irradiating the laser light, thereby releasing the held state of the held semiconductor chip and imparting kinetic energy to the semiconductor chip 6.

又,使用圖9(A)說明之本發明之轉印方法之半導體晶片保持步驟(S1)亦可為,針對不使用載體基板30而藉由未圖示之固持裝置直接固持之半導體晶片6,以前端面5與上表面7接觸時成為如前端面5之全部區域於與相對向之上表面7之區域同等之區域或相對向之上表面7之區域之內側相接觸之位置關係之方式使半導體晶片6移動後,使支持基板1之前端面5與半導體晶片6之上表面7接觸,而使半導體晶片6保持於支持基板1。In addition, the semiconductor wafer holding step (S1) of the transfer method of the present invention described using FIG. 9(A) may also be for the semiconductor wafer 6 directly held by a holding device not shown without using the carrier substrate 30, When the front end surface 5 and the upper surface 7 are in contact, the entire area of the front end surface 5 is in contact with the same area as the area opposite to the upper surface 7 or the inner side of the area opposite to the upper surface 7. After the wafer 6 is moved, the front end surface 5 of the support substrate 1 is brought into contact with the upper surface 7 of the semiconductor wafer 6 so that the semiconductor wafer 6 is held on the support substrate 1.

又,於本發明之轉印裝置及轉印方法中對被轉印基板使用具有與實施例1中說明之支持基板1相同之構造之被轉印基板時,被轉印基板之黏著層之凸部之排列可與支持基板之黏著層之凸部之排列相同。又,支持基板之前端面之數量可與被轉印基板之前端面之數量相同,亦可不同。Moreover, when the transfer substrate having the same structure as the support substrate 1 described in Embodiment 1 is used for the transfer substrate in the transfer device and the transfer method of the present invention, the convexity of the adhesive layer of the transfer substrate is The arrangement of the parts can be the same as the arrangement of the convex parts of the adhesive layer of the support substrate. In addition, the number of the front end surfaces of the supporting substrate may be the same as or different from the number of the front end surfaces of the substrate to be transferred.

1:支持基板 2:基板 3:黏著層 4:凸部 5:前端面 6:半導體晶片 7:上表面 8:側面 8a:側面 9:被轉印基板 9':被轉印基板 10:被轉印面 11:支持基板 13:黏著層 15:前端面 16:區域 17:區域 18:照射範圍 20:轉印裝置 22:支持基板保持部 23:雷射光照射部 24:被轉印基板保持部 25:雷射光 26:雷射光源 27:檢流計鏡 28:fθ透鏡 29:移動部 30:載體基板 31:載體基板黏著層 37:底面 41:支持基板 43:黏著層 44:凸部 45:前端面 46:面 101:支持基板 102:基板 103:黏著層1: Support substrate 2: substrate 3: Adhesive layer 4: Convex 5: Front face 6: Semiconductor wafer 7: Upper surface 8: side 8a: side 9: Substrate to be transferred 9': substrate to be transferred 10: Surface to be transferred 11: Support substrate 13: Adhesive layer 15: Front face 16: area 17: area 18: Irradiation range 20: transfer device 22: Support substrate holding part 23: Laser light irradiation section 24: Transfer substrate holding part 25: Laser light 26: Laser light source 27: Galvanometer mirror 28: fθ lens 29: Mobile Department 30: Carrier substrate 31: Carrier substrate adhesive layer 37: Bottom 41: Support substrate 43: Adhesive layer 44: Convex 45: Front face 46: Noodles 101: Support substrate 102: substrate 103: Adhesive layer

圖1(A)、(B)係說明本發明之實施例1之半導體晶片之支持基板之圖。 圖2(A)~(D)係說明使用本發明之半導體晶片之支持基板之轉印方法之圖。 圖3係沿圖2(A)之b箭頭方向觀察之圖,且係說明本發明之實施例1之半導體晶片之支持基板之圖。 圖4係說明本發明之實施例2之半導體晶片之支持基板之圖,且係自與沿實施例1之圖2(A)之b箭頭方向相同之方向觀察之圖。 圖5(A)~(D)係說明使用整面具有均等厚度之黏著層之支持基板之轉印之圖。 圖6(A)、(B)係沿圖2(B)之c箭頭方向觀察之圖。 圖7係說明本發明之實施例3之轉印裝置之圖。 圖8係說明本發明之實施例4之轉印方法之流程圖。 圖9(A)、(B)係說明本發明之實施例4之轉印方法之圖。 圖10(A)、(B)係說明本發明之支持基板之其他形態之圖。1(A) and (B) are diagrams illustrating the supporting substrate of the semiconductor chip according to the first embodiment of the present invention. 2(A) to (D) are diagrams illustrating the transfer method of the supporting substrate using the semiconductor wafer of the present invention. FIG. 3 is a view viewed in the direction of arrow b in FIG. 2(A), and is a view illustrating the support substrate of the semiconductor chip of the first embodiment of the present invention. FIG. 4 is a diagram illustrating the support substrate of the semiconductor chip of the second embodiment of the present invention, and is a diagram viewed from the same direction as the direction of the arrow b in FIG. 2(A) of the first embodiment. 5(A)-(D) are diagrams illustrating the transfer of a support substrate with an adhesive layer of uniform thickness on the entire surface. Figures 6(A) and (B) are diagrams viewed in the direction of arrow c in Figure 2(B). Fig. 7 is a diagram illustrating the transfer device of the third embodiment of the present invention. FIG. 8 is a flowchart illustrating the transfer method of Embodiment 4 of the present invention. 9(A) and (B) are diagrams illustrating the transfer method of Embodiment 4 of the present invention. 10(A) and (B) are diagrams illustrating other forms of the supporting substrate of the present invention.

1:支持基板 1: Support substrate

2:基板 2: substrate

3:黏著層 3: Adhesive layer

4:凸部 4: Convex

5:前端面 5: Front face

6:半導體晶片 6: Semiconductor wafer

7:上表面 7: Upper surface

8:側面 8: side

9:被轉印基板 9: Substrate to be transferred

25:雷射光 25: Laser light

Claims (7)

一種半導體晶片之支持基板,其特徵在於:其係於一面具有黏著層,經由上述黏著層保持半導體晶片,藉由自保持有上述半導體晶片之側之相反側向上述半導體晶片照射雷射光而解除上述半導體晶片之保持狀態,並且對上述半導體晶片賦予動能者;且 與上述半導體晶片接觸之側之面具有包含上述黏著層之凸部, 上述凸部之前端面具有黏著性, 上述凸部之上述前端面之全部區域於與上述半導體晶片接觸時,僅在與上述半導體晶片之最接近上述黏著層之面同等之區域或者較上述半導體晶片之最接近上述黏著層之面更內側之區域與上述半導體晶片接觸。A support substrate for a semiconductor chip, characterized in that it has an adhesive layer on one side, holds the semiconductor chip via the adhesive layer, and releases the semiconductor chip by irradiating the semiconductor chip with laser light from the side opposite to the side where the semiconductor chip is held. The holding state of the semiconductor chip and imparting kinetic energy to the above-mentioned semiconductor chip; and The surface on the side in contact with the semiconductor chip has a convex portion including the adhesive layer, The front end surface of the above-mentioned protrusion has adhesiveness, When the entire area of the front end surface of the convex portion is in contact with the semiconductor chip, it is only in the same area as the surface of the semiconductor chip closest to the adhesive layer or inside than the surface of the semiconductor chip closest to the adhesive layer The area is in contact with the above-mentioned semiconductor wafer. 如請求項1之半導體晶片之支持基板,其中上述凸部之上述前端面之全部區域於與上述半導體晶片接觸時,僅在包含上述半導體晶片之最接近上述黏著層之面之中心或者重心的較上述半導體晶片之最接近上述黏著層之面更內側之區域與上述半導體晶片接觸。The support substrate for a semiconductor chip according to claim 1, wherein when the entire area of the front end surface of the protrusion is in contact with the semiconductor chip, only the center or the center of gravity of the surface closest to the adhesive layer of the semiconductor chip is included. The area on the inner side of the surface closest to the adhesive layer of the semiconductor chip is in contact with the semiconductor chip. 如請求項1或2之半導體晶片之支持基板,其中上述凸部之上述前端面為圓形。The semiconductor chip supporting substrate of claim 1 or 2, wherein the front end surface of the convex portion is circular. 一種轉印裝置,其特徵在於其係使用雷射光轉印半導體晶片者,且 具有: 支持基板,其保持上述半導體晶片之一面; 支持基板保持部,其保持上述支持基板; 雷射光照射部,其向上述半導體晶片照射雷射光;及 被轉印基板保持部,其保持被轉印有上述半導體晶片之被轉印基板;且 上述支持基板於保持有上述半導體晶片之側之面具有包含黏著層之凸部, 上述凸部於前端面具有黏著性, 上述凸部之上述前端面之全部區域於與上述半導體晶片接觸時,僅在與上述半導體晶片之最接近上述黏著層之面同等之區域或者較上述半導體晶片之最接近上述黏著層之面更內側之區域與上述半導體晶片接觸, 在以保持於上述支持基板之上述半導體晶片之與上述支持基板側為相反側之面和上述被轉印基板之被轉印有上述半導體晶片之側之面設有空間地對向之方式利用上述被轉印基板保持部保持上述被轉印基板的狀態下,藉由從上述雷射光照射部自上述支持基板之保持有上述半導體晶片之側之相反側向上述半導體晶片照射雷射光而解除上述半導體晶片之保持狀態,且藉由於自上述黏著層觀察時之上述半導體晶片側對上述半導體晶片賦予動能而將上述半導體晶片轉印至上述被轉印基板。A transfer device, characterized in that it uses laser light to transfer semiconductor wafers, and have: A supporting substrate, which holds one side of the above-mentioned semiconductor wafer; A support substrate holding portion, which holds the above-mentioned support substrate; A laser light irradiating part which irradiates the above-mentioned semiconductor wafer with laser light; and A transferred substrate holding portion, which holds the transferred substrate to which the above-mentioned semiconductor wafer is transferred; and The support substrate has a convex portion including an adhesive layer on the surface of the side holding the semiconductor chip, The above-mentioned protrusion has adhesiveness on the front end surface, When the entire area of the front end surface of the convex portion is in contact with the semiconductor wafer, it is only in the area equivalent to the surface of the semiconductor wafer closest to the adhesive layer or more inside than the surface of the semiconductor wafer closest to the adhesive layer The area is in contact with the above-mentioned semiconductor wafer, The surface of the semiconductor wafer held on the support substrate opposite to the support substrate side and the surface of the transfer substrate on the side to which the semiconductor wafer is transferred are spaced to face each other. While the transferred substrate holding portion holds the transferred substrate, the semiconductor wafer is released by irradiating the semiconductor wafer with laser light from the laser light irradiating portion from the side opposite to the side of the support substrate on which the semiconductor wafer is held. The holding state of the wafer, and the transfer of the semiconductor wafer to the substrate to be transferred due to the kinetic energy imparted to the semiconductor wafer from the side of the semiconductor wafer when viewed from the adhesive layer. 如請求項4之轉印裝置,其中上述被轉印基板 於上述被轉印基板之被轉印有上述半導體晶片之側之面具有包含黏著層之凸部,且 上述被轉印基板之上述凸部之前端面具有黏著性, 上述被轉印基板之上述凸部之上述前端面之全部區域於與上述半導體晶片接觸時,僅在與上述半導體晶片之最接近上述黏著層之面同等之區域或者較上述半導體晶片之最接近上述黏著層之面更內側之區域與上述半導體晶片接觸。The transfer device of claim 4, wherein the substrate to be transferred is A convex portion including an adhesive layer is provided on the surface of the substrate to be transferred on the side on which the semiconductor wafer is transferred, and The front end surface of the convex portion of the substrate to be transferred has adhesiveness, When the entire area of the front end surface of the convex portion of the substrate to be transferred is in contact with the semiconductor wafer, only the area equivalent to the surface of the semiconductor wafer closest to the adhesive layer or the area closest to the semiconductor wafer The area on the inner side of the adhesive layer is in contact with the semiconductor chip. 一種半導體晶片之轉印方法,其特徵在於其係使用雷射光轉印半導體晶片之轉印方法,且具備: 半導體晶片保持步驟,其係使支持基板之黏著層保持上述半導體晶片之一面;以及 轉印步驟,其係在上述支持基板之上述黏著層所保持之上述半導體晶片之與上述支持基板側為相反側之面和被轉印基板之被轉印有上述半導體晶片之側之面設有空間地對向之位置配置上述被轉印基板,且藉由自上述支持基板之保持有上述半導體晶片之側之相反側向上述半導體晶片照射雷射光而解除上述半導體晶片之利用上述支持基板之保持狀態,並且藉由向上述被轉印基板對上述半導體晶片賦予動能而將上述半導體晶片轉印至上述被轉印基板;且 上述支持基板之特徵在於: 於保持上述半導體晶片之側之面具有包含上述黏著層之凸部, 上述凸部於前端面具有黏著性, 上述凸部之上述前端面之全部區域於與上述半導體晶片接觸時,僅在與上述半導體晶片之最接近上述黏著層之面同等之區域或者較上述半導體晶片之最接近上述黏著層之面更內側之區域與上述半導體晶片接觸;且 上述半導體晶片保持步驟係 於上述支持基板之上述黏著層之上述凸部之上述前端面貼附上述半導體晶片之上述一面而使上述半導體晶片保持於上述支持基板。A method for transferring semiconductor wafers, characterized in that it is a method for transferring semiconductor wafers using laser light, and includes: A semiconductor wafer holding step, which is to make the adhesive layer of the support substrate hold one side of the semiconductor wafer; and The transfer step is provided on the surface of the semiconductor wafer held by the adhesive layer of the support substrate on the side opposite to the support substrate side and the surface of the substrate to be transferred on the side where the semiconductor wafer is transferred The substrate to be transferred is arranged in a spatially opposed position, and the holding of the semiconductor wafer by the support substrate is released by irradiating the semiconductor wafer with laser light from the side opposite to the side on which the semiconductor wafer is held of the support substrate State, and transfer the semiconductor wafer to the transferred substrate by imparting kinetic energy to the transferred substrate to the semiconductor wafer; and The above-mentioned supporting substrate is characterized by: Having a convex portion including the adhesive layer on the surface on the side holding the semiconductor chip, The above-mentioned protrusion has adhesiveness on the front end surface, When the entire area of the front end surface of the convex portion is in contact with the semiconductor chip, it is only in the same area as the surface of the semiconductor chip closest to the adhesive layer or inside than the surface of the semiconductor chip closest to the adhesive layer The area is in contact with the aforementioned semiconductor wafer; and The above-mentioned semiconductor wafer holding step is The one surface of the semiconductor wafer is attached to the front end surface of the protrusion of the adhesive layer of the support substrate to hold the semiconductor wafer on the support substrate. 如請求項6之半導體晶片之轉印方法,其中上述被轉印基板 於上述被轉印基板之被轉印有上述半導體晶片之側之面具有包含黏著層之凸部, 上述被轉印基板之上述凸部之前端面具有黏著性, 上述被轉印基板之上述凸部之上述前端面之全部區域於與上述半導體晶片接觸時,僅在與上述半導體晶片之最接近上述黏著層之面同等之區域或者較上述半導體晶片之最接近上述黏著層之面更內側之區域與上述半導體晶片接觸。The semiconductor wafer transfer method of claim 6, wherein the substrate to be transferred is Having a convex portion including an adhesive layer on the surface of the substrate to be transferred on the side on which the semiconductor wafer is transferred, The front end surface of the convex portion of the substrate to be transferred has adhesiveness, When the entire area of the front end surface of the convex portion of the substrate to be transferred is in contact with the semiconductor wafer, only the area equivalent to the surface of the semiconductor wafer closest to the adhesive layer or the area closest to the semiconductor wafer The area on the inner side of the adhesive layer is in contact with the semiconductor chip.
TW109104342A 2019-02-14 2020-02-12 Support substrate, transfer device and transfer method for semiconductor wafer TWI837302B (en)

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