WO2020166301A1

WO2020166301A1 - Semiconductor chip supporting substrate, transfer apparatus, and transfer method

Info

Publication number: WO2020166301A1
Application number: PCT/JP2020/002343
Authority: WO
Inventors: 新井　義之
Original assignee: 東レエンジニアリング株式会社
Priority date: 2019-02-14
Filing date: 2020-01-23
Publication date: 2020-08-20
Also published as: TW202105585A; TWI837302B

Abstract

Proposed are a semiconductor chip supporting substrate, a transfer apparatus, and a transfer method that enable high-precision transfer of semiconductor chips when the semiconductor chips are to be transferred from a supporting substrate to a transfer destination substrate by using a laser lift-off method. Specifically, this semiconductor chip supporting substrate has an adhesive layer on one surface, and holds semiconductor chips through the adhesive layer. When a laser beam is emitted toward the semiconductor chips from a side opposite to the side at which the semiconductor chips are held, the semiconductor-chip held state is released, and the semiconductor chips are biased. The surface, of the supporting substrate, which comes into contact with the semiconductor chips has projections formed of the adhesive layer. The projections each have a tacky leading end surface, and when the entire area of the leading end surface of the projection comes into contact with the corresponding semiconductor chip, the area comes into contact with a surface, of a semiconductor chip, closest to the adhesive layer such that the area is equivalent to the surface or the area falls within the inner side of the surface.

Description

Semiconductor chip support substrate, transfer device, and transfer method

The present invention relates to a mounting method and a mounting device for mounting a semiconductor chip with high accuracy and stability.

▽Semiconductor chips are becoming smaller to reduce costs, and efforts are being made to mount the miniaturized semiconductor chips with high precision. In particular, a semiconductor chip having a size of 50 μm×50 μm or less, which is called a micro LED, has been developed for a display, and it is required to mount the micro LED at high speed with an accuracy of several μm.

Patent Document 1 discloses a transfer substrate arrangement in which a transfer substrate is arranged in a vacuum environment so that one surface of the LED chip is opposite to the other surface of the LED chip held on the transfer substrate with a gap therebetween. And a transfer step of irradiating the transfer substrate with laser light to separate the LED chip from the transfer substrate and urging the LED chip toward the transfer substrate to transfer to the transfer substrate. There is described a technique for eliminating the influence of time-dependent air resistance and transferring and mounting the LED chip with high accuracy.

Japanese Patent Laid-Open No. 2018-60993

A supporting substrate for holding a semiconductor chip has an adhesive layer 103 made of an adhesive of uniform thickness on the surface of the supporting substrate 101 on the side for holding the semiconductor chip 6 as shown in FIG. 5A, for example. There are also many. In a state where the semiconductor chip 6 held by the supporting substrate 101 having such an adhesive layer 103 and the adhesive layer 103 are bonded to each other, for example, in order to bond the semiconductor chip 6 to the adhesive layer 103 provided on the substrate 102, a semiconductor There is a possibility that the adhesive layer 103 is deformed when the chip 6 is pressed against the adhesive layer 103, and the adhesive layer 103 also wraps around the side surface of the semiconductor chip. FIG. 5A shows a state in which the adhesive layer 103 wraps around the left side surface 8 a of the semiconductor chip 6.

In the state where the adhesive layer 103 wraps around the side surface 8a of the semiconductor chip 6, the method described in Patent Document 1, that is, the laser lift-off method is applied to the transferred substrate 9 facing the supporting substrate 101 with a gap in a vacuum environment. When the semiconductor chip 6 held by the support substrate 101 is transferred to the transfer target substrate 9 by using the adhesive layer 103 that has wrapped around the side surface 8a of the semiconductor chip 6, as shown in FIG. From the adhesive layer 103 between the upper surface 7 where the chip 6 is in contact with the adhesive layer 103 and each side surface 8 of the semiconductor chip 6, or between the side surface 8a of the semiconductor chip 6 and the other side surface 8. Differences occur in the timing at which the respective parts of the semiconductor chip 6 are separated. As a result, as shown in FIG. 5C, the posture of the semiconductor chip 6 when the semiconductor chip 6 is urged from the supporting substrate 101 toward the transferred substrate 9 by the laser lift-off method collapses, and FIG. As shown in (D), there is a possibility that the accuracy with which the semiconductor chip 6 is transferred to the transferred substrate 9 is adversely affected.

In view of the above problems, the present invention provides a semiconductor chip support substrate, a transfer device, and a transfer method capable of transferring the semiconductor chip with high accuracy when the semiconductor chip is transferred from the support substrate to the transfer target substrate using the laser lift-off method. It is intended to be a suggestion.

In order to solve the above problems, the support substrate of the present invention has an adhesive layer on one surface, holds a semiconductor chip via the adhesive layer, and the semiconductor chip is held from the side opposite to the side holding the semiconductor chip. Is a support substrate of the semiconductor chip, which releases the holding state of the semiconductor chip and urges the semiconductor chip by irradiating a laser beam toward the It has a convex portion consisting of a layer, the convex portion has adhesiveness on the tip surface, all regions of the tip surface of the convex portion most of the semiconductor chip when contacting the semiconductor chip. It is characterized in that the semiconductor chip is contacted only in a region equivalent to the surface close to the adhesive layer or in a region inside the surface of the semiconductor chip closest to the adhesive layer.

Since laser lift-off can be performed without the adhesive layer wrapping around the side surface of the semiconductor chip, it is less likely that the semiconductor chip will separate from the adhesive layer within the range in which the semiconductor chip is in contact with the adhesive layer, and thus the transfer target substrate Since the falling posture of the semiconductor chip is stable, the transfer can be performed accurately.

Further, all regions of the tip surface of the convex portion, when in contact with the semiconductor chip, the most adhesive layer of the semiconductor chip including the center or center of gravity of the surface of the semiconductor chip closest to the adhesive layer. You may use the support substrate of a semiconductor chip characterized by making contact with the said semiconductor chip only in the area|region inside the surface which adjoins.

By making the area in contact with the adhesive layer of the semiconductor chip a small area including the center or the center of gravity of the semiconductor chip, in addition to making it more difficult to cause a timing discrepancy when the semiconductor chip separates from the adhesive layer because the contact area is small, Since the contact region includes the center or the center of gravity, the falling posture of the semiconductor chip on the second supporting substrate is more stable, and thus the transfer can be performed accurately.

Further, a support substrate for a semiconductor chip may be used, wherein the tip end surface of the protrusion is circular.

By making the area that contacts the adhesive layer of the semiconductor chip circular, the entire tip surface can be efficiently irradiated with laser light.

A transfer device of the present invention is a transfer device for transferring a semiconductor chip by using a laser beam, the support substrate holding one surface of the semiconductor chip, a support substrate holding portion holding the support substrate, The semiconductor substrate includes a laser light irradiation unit that irradiates a semiconductor chip with laser light, and a transferred substrate holding unit that holds a transferred substrate onto which the semiconductor chip is transferred. The supporting substrate holds the semiconductor chip. There is a convex portion formed of an adhesive layer on the side surface, the convex portion has an adhesive property on the tip surface, all regions of the tip surface of the convex portion when the semiconductor chip when contacting the semiconductor chip Of the semiconductor chip contacted with the semiconductor chip only in a region equivalent to the surface closest to the adhesive layer or in a region inside the surface of the semiconductor chip closest to the adhesive layer, and the semiconductor chip held by the support substrate. The transfer target substrate is held by the transfer target substrate holding portion such that a surface of the transfer target substrate opposite to the support substrate side and a surface of the transfer target substrate on which the semiconductor chip is transferred face each other with a space therebetween. In this state, the holding state of the semiconductor chip is released by irradiating the semiconductor chip from the side opposite to the side on which the semiconductor chip is held toward the semiconductor chip with laser light, and the adhesive is released. The semiconductor chip is transferred to the transfer target substrate by urging the semiconductor chip toward the semiconductor chip side when viewed from a layer.

By using the transfer device of the present invention, laser lift-off can be performed in a state where the side surface of the semiconductor chip does not wrap around the side surface of the semiconductor chip, and thus the timing at which the semiconductor chip separates from the adhesive layer within the range in which the semiconductor chip is in contact with the adhesive layer. Is less likely to occur, and the posture of the semiconductor chip falling onto the substrate to be transferred is stabilized, so that the transfer can be performed accurately.

Further, in the transfer device of the present invention, the transfer substrate has a convex portion formed of an adhesive layer on a surface on which the semiconductor chip is transferred, and the convex portion of the transfer substrate has an adhesive surface on a tip surface. And all regions of the tip end surface of the convex portion of the transferred substrate have a region equivalent to a surface closest to the adhesive layer of the semiconductor chip when contacting the semiconductor chip or the semiconductor chip. It may be characterized in that the semiconductor chip is contacted only in a region inside a surface closest to the adhesive layer.

By using a transfer target substrate having an adhesive layer that does not wrap around the side surface of the semiconductor chip like the support substrate, it is possible to accurately transfer this transfer target substrate to another transfer target substrate or a mounting substrate as a support substrate. Can be transcribed.

The transfer method of the present invention is a transfer method of transferring a semiconductor chip by using a laser beam, the semiconductor chip holding step of holding one surface of the semiconductor chip in an adhesive layer of a support substrate, The transfer target substrate is arranged at a position where a surface of the semiconductor chip opposite to the support substrate side held by the adhesive layer and a surface of the transfer target substrate on the semiconductor chip transfer side face each other with a space provided therebetween. Then, by irradiating the semiconductor chip from the side opposite to the side of the supporting substrate holding the semiconductor chip to the semiconductor chip, the holding state of the semiconductor chip by the supporting substrate is released and the semiconductor chip is directed toward the transfer target substrate. Transfer step of urging the semiconductor chip to transfer the semiconductor chip to the transfer target substrate, wherein the support substrate has a convex portion formed of the adhesive layer on a surface on a side for holding the semiconductor chip. And the convex portion has adhesiveness on the tip surface, and all the regions of the tip surface of the convex portion are the surfaces that are closest to the adhesive layer of the semiconductor chip when contacting the semiconductor chip. The semiconductor chip is contacted with the semiconductor chip only in an area equal to or closer to the surface of the semiconductor chip which is closest to the adhesive layer, and the semiconductor chip holding step includes the adhesive layer of the supporting substrate. The semiconductor chip is held on the support substrate by adhering the one surface of the semiconductor chip to the tip surface of the convex portion.

Since the laser lift-off is performed in a state where the adhesive layer does not wrap around the side surface of the semiconductor chip, it is difficult to cause a timing mismatch when the semiconductor chip separates from the adhesive layer within the range where the semiconductor chip is in contact with the adhesive layer. Since the posture of the semiconductor chip facing toward is stable, the transfer can be performed accurately.

Further, in the transfer method of the present invention, the transferred substrate has a convex portion formed of an adhesive layer on a surface of the transferred substrate on which the semiconductor chip is transferred, and the convex portion of the transferred substrate is The tip surface has adhesiveness, and all the areas of the tip surface of the convex portion of the transferred substrate are areas equivalent to the surface of the semiconductor chip closest to the adhesive layer when contacting the semiconductor chip. Alternatively, the semiconductor chip may be in contact with the semiconductor chip only in a region inside a surface of the semiconductor chip closest to the adhesive layer.

By using a transfer target substrate that has an adhesive layer that does not wrap around the side surface of the semiconductor chip like the support substrate, it is possible to transfer accurately even if it is transferred to another transfer target substrate or mounting substrate.

By using the semiconductor chip support substrate, the transfer device, and the transfer method of the present invention, when the semiconductor chip is transferred from the support substrate to the transfer target substrate by using the laser lift-off method, the adhesive layer of the support substrate is the side surface of the semiconductor chip. It is possible to prevent the orientation of the semiconductor chip from being disturbed when the semiconductor chip is biased toward the transfer target substrate due to the wraparound, and the semiconductor chip can be transferred with high accuracy.

It is a figure explaining the support substrate of the semiconductor chip of Example 1 of this invention. It is a figure explaining the transfer method using the support substrate of the semiconductor chip of this invention. FIG. 3B is a view as viewed from the direction of arrow b in FIG. 2A and is a diagram illustrating a support substrate of the semiconductor chip according to the first embodiment of the present invention. It is a figure explaining the support substrate of the semiconductor chip of Example 2 of this invention, and is the figure seen from the same direction as the arrow b of FIG. 2(A) of Example 1. FIG. It is a figure explaining transfer using the support substrate which has an adhesive layer of uniform thickness on the whole surface. It is a c arrow line view of FIG. 2(B). It is a figure explaining the transfer apparatus of Example 3 of this invention. It is a flowchart explaining the transfer method of Example 4 of this invention. It is a figure explaining the transfer method of Example 4 of this invention. It is a figure explaining another form of the support substrate of this invention.

Embodiments of a semiconductor chip support substrate, a transfer device, and a transfer method according to the present invention will be described with reference to the drawings.

Embodiment 1 of Embodiment 1 of a supporting substrate for a semiconductor chip of the present invention is shown in FIG.
FIG. 1A is a plan view of a support substrate 1 which is a support substrate for a semiconductor chip of Example 1, and FIG. 1B is a view of FIG. The supporting substrate 1 is a substrate 2 which is a flat plate made of a material that transmits laser light such as SiO2 or sapphire, and an adhesive layer 3 which is made of an adhesive material such as polyimide, silicon or dimethylpolysiloxane (PDMS). And have.

In this embodiment, the adhesive layer 3 is, for example, polyimide or silicon containing a photosensitive material and has a property of decomposing and generating a gas component when irradiated with a laser beam. The adhesive layer 3 is transmitted from the substrate 2 side of the supporting substrate 1 through a laser light irradiation unit (not shown) to contact the adhesive layer 3 with the laser light, and thus the adhesive layer 3 is directed toward the semiconductor chip 6 held by the supporting substrate 1. When irradiated, the polymer of the adhesive layer 3 is decomposed and gasified, thereby releasing the holding state of the semiconductor chip 6 by the supporting substrate 1 and urging the semiconductor chip 6. By having the adhesive layer 3 having such a function, the semiconductor chip 6 held on the supporting substrate 1 can be transferred by the laser lift-off method.

The adhesive layer 3 is provided on one surface of the substrate 2, and a plurality of convex portions 4 having a convex shape are formed on the one surface of the substrate 2. As shown in FIG. 1B, in the supporting substrate 1 of this embodiment, the adhesive layer 3 is not provided on the substrate 2 in the region other than the convex portion 4. Such an adhesive layer 3 is formed by applying a pressure sensitive adhesive forming the adhesive layer 3 to the entire surface of the substrate 2 with a uniform thickness using a slit coater or the like, and then applying a photolithographic method or the like to the areas other than the convex portions 4. The pressure-sensitive adhesive layer 3 may be removed to form, the pattern of the pressure-sensitive adhesive layer 3 may be formed on the substrate 2 by an inkjet method to form the convex portion 4, or the pressure-sensitive adhesive layer 3 may be formed by another method. May be.

FIG. 2A shows a view of the support substrate 1 holding the semiconductor chip 6 from the same direction as the arrow a in FIG. 1A. Further, FIG. 3 is a view taken in the direction of arrow b in FIG. 2A, and shows a range in which the front end surface 5 of the support substrate 1 is in contact with one semiconductor chip 6. As shown by the hatched portions in FIGS. 2A and 3, all the regions of the tip surface 5 of each convex portion 4 are the surfaces of the semiconductor chip 6 that are closest to the adhesive layer 3 when in contact with the semiconductor chip 6. The semiconductor chip 6 is contacted only in a region inside the upper surface 7. That is, when the supporting substrate 1 holds the semiconductor chip 6, the semiconductor chip 6 contacts only the tip surface 5 with the adhesive layer 3, and the respective tip surfaces 5 in contact with the semiconductor chip 6 cover the entire area of the semiconductor chip 6. Contact. The support substrate 1 holds the semiconductor chip 6 by contacting all the regions of the tip surface 5 with the region inside the upper surface 7 which is the surface of the semiconductor chip 6 closest to the adhesive layer 3.

Here, since all the regions of the tip surface 5 are inside the region of the upper surface 7 of the semiconductor chip 6 that is in contact with the tip surface 5, the semiconductor chip 6 is held by the support substrate 1 in order to hold the semiconductor chip 6. Even if the adhesive layer 3 is deformed by being pressed against the adhesive layer 3, the adhesive layer 3 does not wrap around the side surface 8 of the semiconductor chip 6.

By using the supporting substrate 1 of the present embodiment, the substrate 2 is transmitted from the supporting substrate 1 from the substrate 2 side as shown in FIG. Even if the semiconductor chip 6 is peeled from the adhesive layer 3 and is urged by irradiating the entire front end surface 5 with a laser light irradiation section (not shown) toward the semiconductor chip 6, the upper surface 7 of the support substrate 1 There is no variation in the timing at which the semiconductor chip 6 separates from the adhesive layer 3 in the area in contact with the adhesive layer 3, and the falling posture of the semiconductor chip 6 becomes stable as shown in FIG. As shown in the figure, it can be transferred onto the transferred substrate 9 with high accuracy.

Further, in the supporting substrate 1 of the present invention, when the semiconductor chip 6 is held, the area of the tip surface 5 is located in the area including the center or the center of gravity of the upper surface 7 which is the surface of the semiconductor chip 6 closest to the adhesive layer 3. It may be the support substrate 1 having the tip surface 5 in contact therewith. By transferring the semiconductor chip 6 to the transferred substrate 9 by using the laser lift-off method using the support substrate 1 having the tip surface 5 as described above, all regions of the tip surface include the center or the center of gravity of the top surface 7. Since the semiconductor chip 6 is in contact with the area, the falling posture of the semiconductor chip 6 becomes more stable when the semiconductor chip 6 separates from the adhesive layer 3 in FIGS. 2(B) to 2(C). Can be transferred with higher accuracy than in the case of adhering to the center of the semiconductor chip 6 or a region not including the center of gravity. Further, it is more preferable that the center or the center of gravity of the tip surface 5 and the top surface 7 are substantially coincident with each other.

Embodiment of a supporting substrate for semiconductor chips of the present invention Embodiment 2 of a supporting substrate 11 which is a supporting substrate for semiconductor chips will be described with reference to FIG. FIG. 4 shows the relationship between the size and the position of the front end surface 15 and the upper surface 7 as in the view of arrow b of FIG. 2A described in the first embodiment. The tip surface 15 of the adhesive layer 13 of the support substrate 11 has a circular area, and all the areas of the tip surface 15 are in contact with the top surface 7 inside the area of the top surface 7 of the semiconductor chip 6. Since the front end surface 15 has a circular region, the efficiency is improved when the semiconductor chip 6 is irradiated with laser light from the laser light irradiation unit (not shown) from the support substrate 11 side as shown in FIG. 2B. It is possible to efficiently irradiate only the region of the tip surface 15 with laser light.

If the shape of the region of the tip surface 15 is rectangular, when laser light is applied to all the regions of the tip surface 15 when a circular laser beam is used, laser light is emitted in a circular range including the region of the rectangular tip surface 15. It will be irradiated with light. This state is shown in FIG. FIG. 6A is a view on arrow c in FIG. In FIG. 6A, the laser light irradiation range 18 is a circular area including the entire area of the tip surface 15 of the adhesive layer 13, so that the area 16 other than the rectangular tip surface 15 is also irradiated with the laser light. Will be done. Since the region 16 includes a part of the upper surface 7 of the semiconductor chip 6, the semiconductor chip 6 may be irradiated with laser light and damaged. FIG. 6B shows the range of the region 17 on the upper surface 7 of the semiconductor chip 6 that may be damaged by irradiation with the circular laser light.

On the other hand, by using the support substrate 11 of the present embodiment, the circular laser light can be efficiently irradiated only to the entire region of the tip surface 15 of the adhesive layer 13, so that the damage to the semiconductor chip 6 can be reduced. ..

An example of the transfer device of the present invention will be described with reference to FIG. The transfer device 20 according to the third exemplary embodiment of the present invention includes a support substrate 1, a support substrate holding portion 22, a laser beam irradiation portion 23, and a transfer substrate holding portion 24.

The supporting substrate 1 is the same as the supporting substrate 1 described in Embodiment 1 with reference to FIG.

The support substrate holding portion 22 has an opening, and holds the support substrate 1 holding the semiconductor chip 6 in advance with the side holding the semiconductor chip 6 facing downward in the Z-axis direction. At this time, the support substrate holding unit 22 holds the support substrate 1 in such a positional relationship that at least the semiconductor chip 6 held by the support substrate 1 is included in the opening range of the support substrate holding unit 22 with respect to the Z-axis direction. By doing so, the laser light 25 emitted from the laser light irradiation unit 23 strikes the semiconductor chip 6 held by the support substrate 1 held by the support substrate holding unit 22 through the opening of the support substrate holding unit 22. be able to.

The laser light irradiation section 23 is composed of a laser light source 26, a galvanometer mirror 27, and an fθ lens. The laser light source 26 is a light source for irradiating the laser light 25, and the galvano mirror 27 is rotatable in two axes and has a function of reflecting the laser light 25 at an arbitrary angle. The fθ lens 28 has a function of focusing the laser light 25 from the galvanometer mirror 27 at a predetermined position.

With this configuration, the laser light irradiation unit 23 emits the laser light from the laser light source 26 from the upper side in the Z-axis direction of the support substrate 1 held by the support substrate holding unit 22, that is, the side opposite to the side holding the semiconductor chip 6. The laser beam 25 is irradiated onto the arbitrary semiconductor chip 6 held by the supporting substrate 1 with the laser beam 25 focused by the galvano mirror 27 and the fθ lens 28.

The transferred substrate holding unit 24 holds the transferred substrate 9 so as to be below the supporting substrate holding unit 22 in the Z-axis direction and face the supporting substrate 1 with a gap. The transferred substrate holding unit 24 has a moving unit 29 that can move in the X-axis direction and the Y-axis direction, and any semiconductor chip 6 held by the support substrate 1 held by the support substrate holding unit 22. On the other hand, a predetermined position of the transfer target substrate 9 can be positioned at a predetermined transfer position in the X-axis direction and the Y-axis direction.

By the transfer substrate holder 24, the predetermined position on the transfer surface 10 of the transfer substrate 9 is aligned with the position of the predetermined semiconductor chip 6 held on the opposing support substrate 1 in the X-axis direction and the Y-axis direction. By irradiating the semiconductor chip 6 at a predetermined position held by the laser beam irradiating section 23 on the supporting substrate 1 with the laser beam 25, the laser beam irradiating section 23 is set at a predetermined position on the transfer surface 10 of the transfer substrate 9. The semiconductor chip 6 is transferred.

By using the transfer device 20, since the supporting substrate 1 has a shape in which the side surface of the semiconductor chip 6 does not wrap around the adhesive layer as described above, the range in which the semiconductor chip 6 is in contact with the adhesive layer. Since the timing mismatch of the semiconductor chip 6 from the adhesive layer is unlikely to occur in the inside, and the falling posture of the semiconductor chip 6 is stabilized during transfer, the semiconductor chip 6 can be accurately placed at a predetermined position on the transfer surface 9 of the transfer substrate 9. Can be transcribed.

Here, in the transfer device 20 of the third embodiment, the transfer target substrate 9 may be a transfer target substrate 9 ′ having a structure similar to that of the support substrate 1.

The transferred substrate 9 ′ has an adhesive layer that forms a convex portion, like the support substrate 1. The convex portion has adhesiveness on the tip surface. The semiconductor chip 6 is held by the transfer target substrate by the contact between the adhesive tip surface and the surface of the semiconductor chip 6 on the transfer side. In the present embodiment, the arrangement of the convex portions is different from that of the support substrate 1, for example, the pitch of the adjacent convex portions is wider than the pitch of the adjacent convex portions of the support substrate 1.

In this way, the transferred substrate 9′ held by the transferred substrate holding part 24 to which the semiconductor chip 6 is transferred is taken out from the transferred substrate holding part 24, and the transferred substrate 9′ is inverted in the Z-axis direction. The transfer substrate 9 ′ can be held by the support substrate holder 22 as a new support substrate with the side of the support substrate holder 22 holding the semiconductor chip 6 facing downward in the Z-axis direction.

By using the transferred substrate 9′ having the same structure as the support substrate 1 for the transferred substrate 9, since the adhesive layer of the transferred substrate 9′ does not wrap around the side surface of the semiconductor chip 6, the transferred substrate 9′ is removed. Even if it is transferred to another transfer target substrate or a mounting substrate as a supporting substrate, the transfer can be performed accurately.

The transfer method according to the fourth embodiment of the present invention includes a semiconductor chip holding step (S1) and a transfer step (S2) as shown in the flow chart of FIG. Each step will be described with reference to FIGS. 9 and 2.

The semiconductor chip holding step (S1) is a step of holding the semiconductor chip 6 on the supporting substrate 1 described in the first embodiment.

In the semiconductor chip holding step (S1), the upper surface 7, which is the surface of the semiconductor chip 6 closest to the adhesive layer 3 of the supporting substrate 1, is attached to the tip surface 5 having the adhesive property of the convex portion 4 of the adhesive layer 3 of the supporting substrate 1. The tip surface 5 and the upper surface 7 are brought into contact with each other so that all the areas of the above are inside the area of the upper surface 7, and the semiconductor chip 6 is held on the support substrate 1.

Here, in the case of simultaneously holding a plurality of semiconductor chips 6 on the support substrate 1, the carrier substrate 30 holding the semiconductor chips 6 is prepared. The carrier substrate 30 has a carrier substrate adhesive layer 31 on one surface, and the carrier substrate adhesive layer 31 contacts a bottom surface 37, which is the surface opposite to the upper surface 7 of the semiconductor chip 6, as shown in FIG. 9A, for example. By doing so, the semiconductor chip 6 is held. In addition, the adhesive force between the carrier substrate adhesive layer 31 and the bottom surface 37 due to the adhesive is smaller than the adhesive force due to the adhesive when the front end surface 5 and the upper surface 7 of the support substrate 1 contact each other. Is made.

Further, in accordance with the arrangement of the respective upper surfaces 7 of the plurality of semiconductor chips 6 on the carrier substrate 30, the arrangement of the tip surfaces 5 of the convex portions 4 of the adhesive layer 3 of the support substrate 1 is such that each tip surface 5 is different. When the upper surface 7 is contacted, all the areas of the respective tip surfaces 5 are formed so as to be contacted inside the area of the upper surface 7 facing each other.

At a position where the front end surface 5 of the support substrate 1 and the upper surface 7 of the semiconductor chip 6 held by the carrier substrate 30 face each other with a gap therebetween, all the regions of the respective front end surfaces 5 have the upper surface 7 of the predetermined semiconductor chip 6. In the area equal to or inside the area of the above, the positional relationship between the carrier substrate 30 and the supporting substrate 1 in the X-axis direction and the Y-axis direction is previously adjusted by a positioning device (not shown) so as to come into contact with the upper surface 7. The upper surface 7 and the tip surface 5 are brought into close contact with each other in the axial direction.

Here, the carrier substrate adhesive layer 31 is adjusted so that the adhesive force between the carrier substrate adhesive layer 31 and the bottom surface 37 due to the adhesive is smaller than the adhesive force due to the adhesive between the front end surface 5 and the upper surface 7 of the support substrate 1. Since the carrier substrate 30 and the support substrate 1 are separated from each other after the top surface 7 is brought into contact with the tip surface 5, the adhesive force between the tip surface 5 and the top surface 7 due to the adhesion is smaller than the bottom surface 37. The bottom surface 37 is peeled from the carrier substrate adhesive layer 31 and the semiconductor chip 6 is held on the support substrate 1 because the adhesion is larger than the adhesion with the carrier substrate adhesive layer 31. In this way, the semiconductor chip 6 is mounted on the support substrate 1 so that all the areas of the respective tip surfaces 5 are equal to or within the area of the upper surface 7 of the predetermined semiconductor chip 6 so as to be in contact with the upper surface 7. Can be held.

The transfer step (S2) is a step of transferring the semiconductor chip 6 held by the support substrate 1 to the transfer surface 10 of the transfer substrate 9 using the laser lift-off method.

First, the support substrate 1 holding the semiconductor chip 6 in the semiconductor chip holding step (S1) is transferred to the Z axis direction with the bottom surface 37 of the semiconductor chip 6 using the transfer device 20 described in FIG. The supporting substrate holding unit 22 holds the substrate so that it is on the lower side.

Subsequently, as shown in FIG. 9B, the transfer substrate 9 is held by the transfer substrate holding portion 24 so that the transfer surface 10 of the transfer substrate 9 is on the upper side in the Z-axis direction. Then, the transfer substrate 9 is positioned so that a predetermined position on the transfer surface 10 is aligned with the position of the predetermined semiconductor chip 6 held by the opposing support substrate 1 in the X-axis direction and the Y-axis direction. By irradiating the semiconductor chip 6 at a predetermined position held by the supporting substrate 1 with the laser light 25 through the substrate 2 through the substrate 2, the laser light 25 is irradiated to the transfer surface 10 of the transfer substrate 9. A predetermined semiconductor chip 6 is transferred to the position.

By using this transfer method, it is possible to transfer without sticking of the adhesive layer to the side surface 8 of the semiconductor chip 6, so that the semiconductor chip 6 adheres within the range where the semiconductor chip 6 is in contact with the adhesive layer 3 at the time of transfer. The timing of leaving the layer 3 is not likely to be inconsistent, and the falling posture of the semiconductor chip 6 during transfer is stable, so that the semiconductor chip 6 can be transferred to a predetermined position on the transfer surface 10 of the transfer substrate 9 with high accuracy.

In the transfer step (S2), the transferred substrate 9 may be replaced with a transferred substrate 9'having an adhesive layer having the same structure as the supporting substrate 1 described in the first embodiment.

By doing so, it is possible to accurately transfer the transferred substrate 9'to another transferred substrate or a mounting substrate as a new supporting substrate.

Although the embodiments of the present invention have been described above, the present invention is not limited to these. For example, the support substrate of the present invention is not limited to the area inside the surface of the semiconductor chip closest to the adhesive layer when all the areas of the tip surface of the convex portion of the adhesive layer are in contact with the semiconductor chip. May be in contact with the semiconductor chip only in a region equivalent to the surface closest to the adhesive layer.

Further, the convex portion of the support substrate of the present invention has a plurality of tip surfaces, and even if all the areas of the tip surfaces are in contact with the area of the surface of the one semiconductor chip closest to the adhesive layer. Good.

Moreover, the adhesive layer of the support substrate of the present invention may be present in a portion other than the convex portion. For example, as shown in FIGS. 10A and 10B, a surface 46 different from the tip surface 45 of the convex portion 44 may be present on the surface of the adhesive layer 43 of the supporting substrate 41 opposite to the substrate 2 side. Here, FIG. 10A is a plan view of the support substrate 41 as seen from the adhesive layer 43 side, and FIG. 10B is a view taken in the direction of arrow d of FIG. 10A.

Further, the adhesive layer 43 of the supporting substrate of the present invention may not have adhesiveness in all ranges, but may have adhesiveness only in the tip surface 45.

Further, the supporting substrate of the present invention may be an adhesive layer having only an adhesive property that does not include a material that decomposes to generate a gas component when irradiated with laser light. In this case, the semiconductor chip side may be provided with a sacrificial layer containing a material that decomposes to generate a gas component when irradiated with laser light, or the material of the semiconductor chip is irradiated with laser light. It may contain a material that decomposes to generate a gas component.

Also, the laser light irradiation unit of the transfer device of the present invention is not limited to the configuration of the third embodiment as long as it can irradiate the laser light at an arbitrary position. For example, a polygon mirror may be used instead of the galvano mirror 27 shown in FIG. 7, or a mask may be used instead of the galvano mirror 27 and the fθ lens 28.

Further, the transfer apparatus of the present invention further includes a supporting substrate holding unit that further includes a moving unit that can move in the X axis direction and the Y axis direction with respect to the supporting substrate holding unit 22 of the third embodiment described with reference to FIG. The movable portion of the supporting substrate holding portion 22 moves in the X-axis direction and the Y-axis direction while holding the supporting substrate 1 so that the position of any semiconductor chip 6 held by the supporting substrate 1 can be changed by a laser. The structure may be such that the laser light 25 is irradiated after being aligned with the position of the laser light 25 emitted from the light source 26.

Further, in the semiconductor chip holding step (S1) of the transfer method of the present invention described with reference to FIG. 9A, the upper surface 7 of the semiconductor chip 6 and the tip surface 5 of the convex portion 4 of the adhesive layer 3 of the supporting substrate 1 are formed. Need only be in contact with each other in a predetermined positional relationship. For example, a carrier substrate adhesive that acts to urge the semiconductor chip 6 by releasing a holding state of the semiconductor chip held by generating a gas component by irradiating laser light. The semiconductor chip 6 may be held on the support substrate 1 by using the laser lift-off method using the carrier substrate 30 provided with the layer 31.

Further, in the semiconductor chip holding step (S1) of the transfer method of the present invention described with reference to FIG. 9A, the semiconductor chip 6 directly gripped by the gripping device (not shown) without using the carrier substrate 30 When the semiconductor chip 5 contacts the upper surface 7, the semiconductor chip 6 has such a positional relationship that all the areas of the tip surface 5 are in contact with the area equivalent to the area of the opposed upper surface 7 or inside the area of the opposed upper surface 7. Alternatively, the upper surface 7 of the semiconductor chip 6 may be brought into contact with the front end surface 5 of the supporting substrate 1 after moving the substrate 1 to hold the semiconductor chip 6 on the supporting substrate 1.

Further, when the transfer substrate having the same structure as the support substrate 1 described in Embodiment 1 is used as the transfer substrate by the transfer device and the transfer method of the present invention, the arrangement of the convex portions of the adhesive layer of the transfer substrate is supported. It may be the same as the arrangement of the convex portions of the adhesive layer of the substrate. Further, the number of tip surfaces of the supporting substrate may be the same as or different from the number of tip surfaces of the transfer substrate.

DESCRIPTION OF SYMBOLS 1 Support substrate 2 Substrate 3 Adhesive layer 4 Convex portion 5 Tip surface 6 Semiconductor chip 7 Top surface 8, 8a Side surface 9 Transfer target substrate 10 Transfer target surface 11 Support substrate 13 Adhesive layer 15 Tip surface 16 Area 17 Area 18 Irradiation range 20 Transfer device 22 Supporting Substrate Holding Section 23 Laser Light Irradiating Section 24 Transferred Substrate Holding Section 25 Laser Light 26 Laser Light Source 27 Galvano Mirror 28 fθ Lens 29 Moving Section 30 Carrier Substrate 31 Carrier Substrate Adhesive Layer 37 Bottom 41 Supporting Substrate 43 Adhesive Layer 44 Convex Section 45 Tip surface 46 Surface 101 Support substrate 102 Substrate 103 Adhesive layer

Claims

The semiconductor chip having an adhesive layer on one surface, holding the semiconductor chip via the adhesive layer, and irradiating the semiconductor chip with laser light from the side opposite to the side holding the semiconductor chip. A supporting substrate for the semiconductor chip, which releases the holding state of the semiconductor chip and biases the semiconductor chip,
The surface contacting the semiconductor chip has a convex portion made of the adhesive layer,
The convex portion has adhesiveness on the tip surface,
All the regions of the tip end surface of the convex portion are equal to the region closest to the adhesive layer of the semiconductor chip when contacting the semiconductor chip or the region closest to the adhesive layer of the semiconductor chip. A support substrate for a semiconductor chip, characterized in that the semiconductor chip is contacted with the semiconductor chip only in an inner region.
All regions of the tip end surface of the convex portion are closest to the adhesive layer of the semiconductor chip including the center or center of gravity of the surface of the semiconductor chip closest to the adhesive layer when contacting the semiconductor chip. The support substrate for a semiconductor chip according to claim 1, wherein the support substrate is in contact with the semiconductor chip only in a region inside the surface.
The support substrate for a semiconductor chip according to claim 1 or 2, wherein the tip surface of the convex portion is circular.
A transfer device for transferring a semiconductor chip using laser light,
A support substrate for holding one surface of the semiconductor chip,
A supporting substrate holding section for holding the supporting substrate,
A laser light irradiation unit for irradiating the semiconductor chip with laser light,
A transferred substrate holding portion that holds a transferred substrate to which the semiconductor chip is transferred,
Have
The supporting substrate has a convex portion formed of an adhesive layer on the surface on the side that holds the semiconductor chip,
The convex portion has adhesiveness on the tip surface,
All the regions of the tip surface of the convex portion are the same as the region closest to the adhesive layer of the semiconductor chip when contacting the semiconductor chip or the region closest to the adhesive layer of the semiconductor chip. Also contacts the semiconductor chip only in the inner region,
The transfer target substrate so that the surface of the semiconductor chip held by the support substrate on the side opposite to the support substrate side and the surface of the transfer target substrate on the side to which the semiconductor chip is transferred face each other with a space provided therebetween. While being held by the transferred substrate holding section, by irradiating a laser beam from the laser beam irradiating section toward the semiconductor chip from the side opposite to the side of the supporting substrate holding the semiconductor chip, A transfer device, wherein the semiconductor chip is transferred to the transfer substrate by releasing the holding state of the semiconductor chip and urging the semiconductor chip toward the semiconductor chip as viewed from the adhesive layer.
The transferred substrate is
The surface of the transferred substrate on which the semiconductor chip is transferred has a convex portion formed of an adhesive layer,
The convex portion of the transferred substrate has adhesiveness on the tip surface,
All the regions of the tip surface of the convex portion of the transferred substrate are the same as the region closest to the adhesive layer of the semiconductor chip when contacting the semiconductor chip or the most adhesive layer of the semiconductor chip. The transfer device according to claim 4, wherein the transfer device is in contact with the semiconductor chip only in a region inside a surface close to the semiconductor chip.
A transfer method for transferring a semiconductor chip using laser light,
A semiconductor chip holding step of holding one surface of the semiconductor chip in an adhesive layer of a supporting substrate,
The surface of the semiconductor chip held by the adhesive layer of the support substrate on the side opposite to the support substrate side and the surface of the transferred substrate on the side to which the semiconductor chip is transferred face each other with a space provided therebetween. The transferred substrate is arranged, and the holding state of the semiconductor chip by the supporting substrate is released by irradiating the semiconductor chip with laser light from the side opposite to the side holding the semiconductor chip of the supporting substrate. A transfer step of urging the semiconductor chip toward the transferred substrate to transfer the semiconductor chip to the transferred substrate;
Have
The support substrate is
The surface of the side that holds the semiconductor chip has a convex portion formed of the adhesive layer,
The convex portion has adhesiveness on the tip surface,
All the regions of the tip end surface of the convex portion are equal to the region closest to the adhesive layer of the semiconductor chip when contacting the semiconductor chip or the region closest to the adhesive layer of the semiconductor chip. Is also in contact with the semiconductor chip only in the inner region,
The semiconductor chip holding step,
A method for transferring a semiconductor chip, characterized in that the one surface of the semiconductor chip is attached to the tip surface of the convex portion of the adhesive layer of the support substrate to hold the semiconductor chip on the support substrate.
The transferred substrate is
The surface of the transferred substrate on which the semiconductor chip is transferred has a convex portion formed of an adhesive layer,
The convex portion of the transferred substrate has adhesiveness on the tip surface,
All the regions of the tip surface of the convex portion of the transferred substrate are the same as the region closest to the adhesive layer of the semiconductor chip when contacting the semiconductor chip or the most adhesive layer of the semiconductor chip. 7. The method of transferring a semiconductor chip according to claim 6, wherein the semiconductor chip is contacted with the semiconductor chip only in an area inside a surface close to the semiconductor chip.