KR102416296B1 - Pickup method, pickup device, and mounting device - Google Patents

Abstract

It makes it a subject to reduce the influence of holding force, such as adhesive force, and to perform pickup and mounting of a semiconductor chip with high reliability. Specifically, it is a pickup method for picking up a semiconductor chip (1) by an electrostatic transfer plate having a semiconductor chip mounting surface (13) in its outermost layer, comprising: a charging step of forming a desired charging pattern on the semiconductor chip mounting surface (13); A pick-up method, characterized in that it has at least a pick-up step of selectively picking up the semiconductor chips (1) by adsorbing them to the semiconductor chip mounting surface (13) according to a desired electrification pattern from among the arrayed plurality of semiconductor chips (1). did

Description

Pickup method, pickup device, and mounting device

[0001] The present invention relates to a pickup method, a pickup apparatus, and a mounting apparatus for picking up a desired semiconductor chip from a plurality of arrayed semiconductor chips.

BACKGROUND ART Efforts have been made to miniaturize a semiconductor chip for cost reduction, and to mount the miniaturized semiconductor chip with high speed and high precision. In particular, LEDs used in displays are required to mount an LED chip of 50 μm × 50 μm or less called micro LED at a high speed with an accuracy of several μm.

In Patent Document 1, a semiconductor chip formed in a grid shape on a wafer is irradiated with band-shaped laser light, transferred to the transfer substrate 200 collectively for each line or plural lines, and then transferred to the transfer substrate 200 . A configuration is described in which a band-shaped laser light is irradiated to a semiconductor chip of , and the transfer substrate 300 is transferred in one line or in a plurality of lines at once.

Japanese Patent Laid-Open No. 2010-161221

However, the one described in Patent Document 1, when transferring (picking up) a semiconductor chip from one transfer substrate to another transfer substrate, does not separate from one transfer substrate due to the influence of the adhesive force maintained by the semiconductor chip, and does not transfer to another transfer substrate. There was a problem in that there was a possibility that the transfer could not be smoothly performed on the substrate.

The present invention solves the above problems, eliminates the influence of adhesive force, etc., and makes it a subject to perform pickup and mounting of semiconductor chips with high reliability.

In order to solve the above problems, the present invention provides a pickup method for picking up a semiconductor chip by an electrostatic transfer plate having an outermost layer having a semiconductor chip mounting surface,

a charging step of forming a desired charging pattern on the semiconductor chip mounting surface;

It is to provide a pickup method, characterized by comprising at least a pickup step of selectively picking up the semiconductor chips by adsorbing them to the semiconductor chip mounting surface according to the desired electrification pattern from among a plurality of the arrayed semiconductor chips.

According to this configuration, by picking up the semiconductor chip with the charged static electricity, the influence of adhesive force or the like is eliminated, and the pickup of the semiconductor chip can be performed with high reliability.

The electrostatic transfer plate includes an insulating layer, the surface of the insulating layer is the semiconductor chip mounting surface, and in the charging step, by selectively contacting or approaching an electrode to which a high voltage is applied to the semiconductor chip mounting surface, the It is good also as a structure which forms the said desired electrification pattern on the said semiconductor chip mounting surface of an electrostatic transfer plate.

With this configuration, it is possible to reliably form a desired charging pattern.

The electrostatic transfer plate includes an insulating layer having photoconductivity, and a surface of the insulating layer is the semiconductor chip mounting surface;

The charging step includes a uniform charging step of uniformly charging the semiconductor chip mounting surface;

The desired charging pattern may be formed on the semiconductor chip mounting surface of the electrostatic transfer plate by an exposure step of irradiating light energy to the semiconductor chip mounting surface according to the desired charging pattern.

Even with this configuration, it is possible to reliably form a desired charging pattern.

In addition, in order to solve the above problems, the present invention provides a pickup device for picking up a semiconductor chip by an electrostatic transfer plate having a semiconductor chip mounting surface as an outermost layer,

a charging pattern forming device for forming a desired charging pattern on the semiconductor chip mounting surface;

a mounting table for arranging a plurality of semiconductor chips;

at least an electrostatic transfer plate transfer head for transferring the electrostatic transfer plate;

The electrostatic transfer plate transfer head transfers the electrostatic transfer plate to the mounting table, and selectively places the semiconductor chip among a plurality of the semiconductor chips arranged on the mounting table according to the desired charging pattern, the semiconductor chip is mounted It is to provide a pickup device, characterized in that the pick-up by adsorption on the surface.

According to this configuration, by picking up the semiconductor chip with the charged static electricity, the influence of adhesive force or the like is eliminated, and the pickup of the semiconductor chip can be performed with high reliability.

The electrostatic transfer plate has an insulating layer, the surface of the insulating layer is the semiconductor chip mounting surface, and the charging pattern forming apparatus selectively contacts or approaches the electrode to which a voltage is applied to the semiconductor chip mounting surface. , the desired charging pattern may be formed on the semiconductor chip mounting surface of the electrostatic transfer plate.

With this configuration, it is possible to reliably form a desired charging pattern.

wherein the insulating layer has photoconductivity, the surface of the insulating layer is the semiconductor chip mounting surface, and the charging pattern forming apparatus includes a uniform charging device for uniformly charging the semiconductor chip mounting surface; It is good also as a structure which has an exposure apparatus which irradiates light energy with respect to the said semiconductor chip mounting surface.

Even with this configuration, it is possible to reliably form a desired charging pattern.

It is good also as a structure which mounts the said semiconductor chip picked up by the pickup apparatus collectively on a board|substrate.

With this configuration, the influence of adhesive force and the like can be eliminated, and the semiconductor chip picked up on the electrostatic transfer plate can be mounted with high reliability.

It is good also as a structure in which the said semiconductor chip is an LED chip which has a projected area of 50 micrometers x 50 micrometers or less.

With this configuration, a high-definition display device can be realized.

According to the pickup method, pickup device, and mounting device of the present invention, the influence of adhesive force and the like can be eliminated, and pickup and mounting of a semiconductor chip can be performed with high reliability.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure explaining a mounting table charging process and a carrier substrate separation process in Example 1 of this invention.
Fig. 2 is a view for explaining a charging step in Example 1 of the present invention.
It is a figure explaining the first half of the pick-up process in Example 1 of this invention.
It is a figure explaining the latter half of the pick-up process in Example 1 of this invention.
5 is a view for explaining a mounting step in Example 1 of the present invention.
6 is a view for explaining a uniform charging step in Example 2 of the present invention.
7 is a view for explaining an exposure step in Example 2 of the present invention.

Example 1

A first embodiment of the present invention will be described with reference to FIGS. 1 to 5 . BRIEF DESCRIPTION OF THE DRAWINGS It is a figure explaining the mounting table charging process and the carrier substrate separation process in Example 1 of this invention. Fig. 2 is a view for explaining a charging step in Example 1 of the present invention. It is a figure explaining the first half of the pick-up process in Example 1 of this invention. It is a figure explaining the latter half of the pick-up process in Example 1 of this invention. 5 is a view for explaining a mounting step in Example 1 of the present invention.

1(b) and 1(c), the semiconductor chip 1 is grown and formed on a carrier substrate 3 made of sapphire, and the semiconductor chip 1 is held on the carrier substrate 3 The bump 2 is formed by exposing one surface and the other surface which is a surface on the opposite side to the outside. Moreover, the carrier substrate 3 has a circular shape or a quadrangle, and what consists of gallium arsenide other than sapphire also exists. Moreover, the semiconductor chip 1 is diced, and a plurality (hundreds to tens of thousands) is two-dimensionally arranged on the carrier substrate 3 . In the small semiconductor chip 1 called microLED, it has a size of 50 micrometers x 50 micrometers or less, and is arranged at the pitch which added the dicing width to this size. It is calculated|required that such a small semiconductor chip 1 is mounted on a circuit board with high precision (for example, precision of 1 micrometer or less). As for the semiconductor chip 1 in Example 1, each semiconductor chip 1 is test|inspected beforehand, and the defective LED chip is removed. Specifically, the defective chip is destroyed by irradiating a laser light stronger than in the case of laser lift-off, which will be described later.

First, in order to firmly hold the carrier substrate 3 and the semiconductor chip 1 held by the carrier substrate 3 on the mounting table 50, as shown in FIG. 1(a), the surface of the mounting table 50 Executes the battalion battle process that elects the entire battlefield. In the mounting table charging step, the surface of the mounting table charging device 60 is brought into contact with or close to the entire surface of the mounting table 50 , and a positive voltage 70 of approximately 1 KV is applied. The mounting table 50 is composed of a pedestal 51 made of a metal such as iron and an insulator 52 made of glass formed on the surface of the pedestal 51 on the side where the mounting table charging device 60 is brought into contact with each other. By applying a positive voltage to the insulator 52 of the mounting table 50 , the entire surface of the mounting table 50 is charged with a positive potential.

In addition, in Example 1, although the mounting table 50 is charged with positive electric potential, it is not necessarily limited to this, A change is possible as appropriate. For example, it may be charged to a negative potential. In that case, the insulator 52 may be made of a material such as Teflon (registered trademark) or polypropylene in accordance with the electrification heat.

In addition, in Example 1, in order to charge the surface of the mounting table 50, the surface of the mounting table charging device 60 was configured to be in contact with or close to the entire surface of the mounting table 50. However, this It is not limited and can be suitably changed. For example, a charging bar in which corona discharge units are arranged in a line is used, and this charging bar is brought into contact with or close to the surface of the mounting table 50 to be relative to the mounting table 50 in a direction orthogonal to the arrangement direction of the corona discharge units. It may be configured to move. Thereby, the surface of the mounting table 50 can be electrically charged with a simple structure.

Next, after the mounting table charging device 60 is removed, the other surfaces of the plurality of semiconductor chips 1 whose one surface is held on the carrier substrate 3 by a carrier substrate transfer head (not shown) are applied to the other surfaces. It is placed on the charged mounting table 50 (see FIG. 1(b)). Thereby, the other surface of the semiconductor chip 1 holding the carrier substrate 3 is hold|maintained by the mounting table 50 by static electricity.

And the carrier substrate separation process which isolate|separates one surface of the semiconductor chip 1 from the carrier substrate 3 is performed. In Example 1, the carrier substrate 3 is irradiated with a laser beam 90 composed of an excimer laser in a line form by a carrier substrate separation device (not shown), and the carrier substrate 3 or a laser light in a line ( Any of 90) is moved relative to the direction orthogonal to the line of the laser beam 90, and the laser beam is irradiated to the entire carrier substrate 3 (refer to Fig. 1(c)). Then, a part of the GaN layer in the carrier substrate 3 made of sapphire is decomposed into Ga and N, and the semiconductor chip 1 is separated from the carrier substrate 3 . This technique is called laser lift-off. The separated carrier substrate 3 can be removed by the carrier substrate transfer head 20 .

As described above, the semiconductor chip 1 to be mounted is held by the mounting table 50 . Then, in parallel with the carrier substrate separation step or after the carrier substrate separation step, a charging step of picking up the semiconductor chip 1 by the electrostatic transfer plate 10 having the semiconductor chip mounting surface 13 as the outermost layer is performed. (See Fig. 2). The electrostatic transfer plate 10 includes a plate 11 made of a metal such as iron and an insulating layer 12 on one side of the plate 11 . The surface on the opposite side to the plate 11 side of this insulating layer 12 is called a semiconductor chip mounting surface in this specification. In the charging step, a desired charging pattern is formed on the semiconductor chip mounting surface 13 by bringing the semiconductor chip mounting surface 13 into contact with or close to the charging pattern forming apparatus 30 .

In other words, as shown in FIG. 2 , the charging pattern forming apparatus 30 includes a plurality of protruding electrode portions 31 with a part of the surface protruding and a plurality of non-protruding portions 32 that do not protrude. A positive voltage 40 of approximately 1 KV is applied to the charging pattern forming apparatus 30 , and the plurality of semiconductor chips 1 arranged on the mounting table 50 is matched to the arrangement pitch of the desired semiconductor chips 1 . The protruding electrode parts 31 protrude in two dimensions at a pitch (also in the depth direction in FIG. 2 ). The electrostatic transfer plate 10 is vacuum-sucked and held by the electrostatic transfer plate transfer head 20 , and a semiconductor chip of the electrostatic transfer plate 10 is mounted on the tip of the protruding electrode part 31 of the charging pattern forming apparatus 30 . The face 13 is brought into contact with or close to it.

Then, by the high voltage applied to the protruding electrode part 31 of the charging pattern forming apparatus 30 , the semiconductor chip mounting surface 13 of the electrostatic transfer plate 10 is in contact with the protruding electrode part 31 . A positive potential is charged to the portion of In other words, a positive potential is charged to the semiconductor chip mounting surface 13 of the electrostatic transfer plate 10 in contact with the desired region in which the protruding electrode portion 31 is formed in the charging pattern forming apparatus 30 to form a desired charging pattern. is formed At this time, in addition to the portion actually in contact with the protruding electrode part 31, since a small area around it may be charged, even if the protruding electrode part 31 is configured to contact an area smaller than the desired area. do.

That is, in the charging process, the projecting electrode 31 to which a voltage is applied is brought into contact with the semiconductor chip mounting surface 13 of the electrostatic transfer plate 10 in a desired area, and the projecting electrode 31 to which a voltage is applied other than the desired area. ), a desired electrification pattern can be formed by the electrification pattern forming apparatus 30 in which the non-projecting portion 32 is formed so as not to contact.

Further, in Example 1, a charging pattern forming apparatus 30 having a plurality of protruding electrode portions 31 and a plurality of non-protruding portions 32 was installed on the semiconductor chip mounting surface 13 of the electrostatic transfer plate 10 . Although it has been configured to form a desired charging pattern by contacting or close to it, it is not necessarily limited thereto and may be appropriately changed. For example, the single electrode portion may be configured to be brought into contact with or close to the insulating layer 12 of the electrostatic transfer plate 10 while moving to form a desired charging pattern. That is, in the charging step, a desired charging pattern may be formed by selectively contacting or approaching an electrode to which a high voltage is applied to the insulating layer 12 .

Moreover, in Example 1, although it comprised so that a desired charging pattern might be formed so that the some semiconductor chip 1 may be picked up, it is not necessarily limited to this, A change is possible as appropriate. For example, you may comprise so that a desired electrification pattern may be formed so that one semiconductor chip 1 may be picked up.

Moreover, in Example 1, although the electrostatic transfer plate 10 is charged with a positive electric potential, it is not necessarily limited to this, A change is possible as appropriate. For example, it may be charged to a negative potential. In that case, what is necessary is just to comprise the insulating layer 12 from materials, such as Teflon (trademark) or polypropylene, in accordance with the electrification heat.

Next, the electrostatic transfer plate 10 is brought into contact with the semiconductor chip 1 on the mounting table 50 to be picked up, but the electric potential charged on the surface of the mounting table 50 just before that is neutralized. The static elimination can be performed on the mounting table 50 by light discharge, AC static elimination, or the like. When the static electricity is removed, the semiconductor chip 1 held by the mounting table 50 may be shaken by static electricity, so that the static electricity transfer plate 10 removes the static electricity immediately before being picked up.

Then, the pick-up process is performed, and among the plurality of the semiconductor chips arranged above, the semiconductor chips are selectively picked up by adsorbing them to the semiconductor chip mounting surface 13 according to a desired electrification pattern. That is, the electrostatic transfer plate 10 charged with the desired charging pattern is transferred to the semiconductor chip 1 placed on the mounting table 50 by the electrostatic transfer plate transfer head 20 adsorbed (see Fig. 3(a) ). ), the semiconductor chip mounting surface 13 charged with the desired charging pattern of the electrostatic transfer plate 10 is selectively brought into contact with the semiconductor chip 1 so as to overlap (see Fig. 3(b)). Then, as the electrostatic transfer plate transfer head 20 moves away from the mounting table 50 , the electrostatic transfer plate 10 also moves away from the mounting table 50 . At this time, a plurality of semiconductor chips 1 according to a desired electrification pattern are adsorbed and picked up by the electrostatic transfer plate 10 by static electricity (see FIG. 4 ).

Here, if pickup is carried out according to a desired electrification pattern, it is not necessary to pick up at a specific position of the set of semiconductor chips 1 on the mounting table 50, but may be picked up at any part.

In Example 1, by selectively picking up the semiconductor chips 1 corresponding to the pitch and arrangement|sequence number mounted on the board|substrate, it is making it possible to transfer efficiently to the mounting process mentioned later.

Moreover, in Example 1, although it comprised so that the electric potential charged on the surface of the mounting table 50 may be statically removed prior to a pick-up process, it is not necessarily limited to this, A change is possible suitably. For example, the surface of the mounting table 50 remains charged, and in the charging step, the semiconductor chip mounting surface 13 of the electrostatic transfer plate 10 has a potential higher than the potential charged to the mounting table 50 (eg For example, about 2 KV), you may comprise so that a pick-up process may be performed. Thereby, while eliminating the electric potential charged to the surface of the mounting table 50 becomes unnecessary, the semiconductor chip 1 can be picked up easily.

Next, a mounting process is performed to mount the semiconductor chip 1 held by the electrostatic transfer plate 10 on the substrate 80 . That is, the electrostatic transfer plate transfer head 20 adsorbs the electrostatic transfer plate 10 and transfers it to the substrate 80 to mount the semiconductor chip 1 held by the electrostatic transfer plate 10 on the substrate 80 . . At the time of mounting, the bump 2 of the semiconductor chip 1 and the electrode of the board|substrate 80 are performed by metal bonding (refer FIG.5(a)). Then, the electrostatic transfer plate transfer head 20 releases the vacuum suction and moves away from the electrostatic transfer plate 10 , so that the electrostatic transfer plate 10 and the semiconductor chip 1 remain on the substrate 80 , and the mounting process is completed. . In other words, the electrostatic transfer plate transfer head 20 mounts the semiconductor chip 1 picked up on the electrostatic transfer plate 10 together with the electrostatic transfer plate 10 .

After that, the electrostatic transfer plate 10 can be removed from the semiconductor chip 1 by removing the static electricity from the electrostatic transfer plate 10 as necessary. The static elimination can be performed on the electrostatic transfer plate 10 by light discharge, AC static elimination, or the like. In addition, since the semiconductor chip 1 is bonded to the substrate, if the electrostatic transfer plate 10 is lightly charged, it can be removed by vacuum suction with the electrostatic transfer plate transfer head 20 without removing the static electricity.

Further, in Example 1, the carrier substrate was transferred by the carrier substrate transfer head and the electrostatic transfer plate was transferred by the electrostatic transfer plate transfer head. For example, the carrier substrate and the electrostatic transfer plate may be transferred by a common transfer head.

As described above, in Example 1, as a pickup method for picking up a semiconductor chip by an electrostatic transfer plate whose outermost layer has a semiconductor chip mounting surface,

a charging step of forming a desired charging pattern on the semiconductor chip mounting surface;

Influence of adhesive force, etc. by a pickup method characterized by comprising at least a pickup step of selectively picking up the semiconductor chip by adsorbing it to the semiconductor chip mounting surface according to the desired charging pattern from among the plurality of semiconductor chips arranged In this case, the semiconductor chip picked up on the electrostatic transfer plate can be mounted with high reliability.

In addition, as a pickup device for picking up a semiconductor chip by an electrostatic transfer plate having a semiconductor chip mounting surface as an outermost layer,

a charging pattern forming device for forming a desired charging pattern on the semiconductor chip mounting surface;

a mounting table for arranging a plurality of semiconductor chips;

at least an electrostatic transfer plate transfer head for transferring the electrostatic transfer plate;

The electrostatic transfer plate transfer head transfers the electrostatic transfer plate to the mounting table, and selectively places the semiconductor chip among a plurality of the semiconductor chips arranged on the mounting table according to the desired charging pattern, the semiconductor chip is mounted With the pickup device characterized in that the pickup device is picked up by adsorption on the surface, the influence of adhesive force or the like is eliminated, and the semiconductor chip picked up on the electrostatic transfer plate can be mounted with high reliability.

Example 2

Embodiment 2 of the present invention is different from Embodiment 1 in the configuration of the charging pattern forming apparatus and charging process. The second embodiment will be described with reference to FIGS. 6 and 7 . 6 is a view for explaining a uniform charging step in Example 2 of the present invention. 7 is a view for explaining an exposure step in Example 2 of the present invention.

In Example 2, the charging process performed by the charging pattern forming apparatus consists of a uniform charging process and an exposure process.

The electrostatic transfer plate 110 in Example 2 includes a plate 11 made of a metal such as iron and an insulating layer 112 having photoconductivity on one surface of the plate 11, the surface of which is a semiconductor It is the chip mounting surface 113 . In the uniform charging process, the semiconductor chip mounting surface 113 of the electrostatic transfer plate 110 held by the electrostatic transfer plate transfer head 20 is subjected to uniform charging in which the surface of the charging pattern forming apparatus 13 is a uniformly flat surface. contact or close to the portion 131 (see FIG. 6 ). A voltage of approximately 1 KV is applied to the uniform charging unit 131 , whereby the semiconductor chip mounting surface 113 of the electrostatic transfer plate 110 is uniformly charged with positive potential. Thereafter, the electrostatic transfer plate 110 is separated from the uniform charging unit 131 by the electrostatic transfer plate transfer head 20 .

Next, an exposure step is performed to form a desired electrification pattern on the semiconductor chip mounting surface 113 of the electrostatic transfer plate 110 . That is, the semiconductor chip mounting surface 113 of the electrostatic transfer plate 110 held by the electrostatic transfer plate transfer head 20 is irradiated with laser light 190 from an exposed portion (not shown) (FIG. 7 ( a) see). By irradiating the laser light 190 to the semiconductor chip mounting surface 113, the electrical conductivity of the insulating layer 112 having photoconductivity increases, and the electric potential being charged is lost. Accordingly, the region irradiated with the laser light 190 is not charged, and the region not irradiated with the laser light 190 can remain charged. In Example 2, using this property, on the semiconductor chip mounting surface 113 of the electrostatic transfer plate 110, the region not irradiated with the laser light 190 and the laser light 190 according to a desired electrification pattern. ) to select the area to be investigated. Thereby, a desired electrification pattern can be formed on the semiconductor chip mounting surface 113 of the electrostatic transfer plate 110 (refer to Fig. 7(b)).

In order to select a region not irradiated with the laser light 190 and a region irradiated with the laser light 190, a galvanometer mirror is provided in the exposure unit, and the laser beam 190 is irradiated to the galvanometer mirror. It can be carried out by controlling the position to be irradiated.

Moreover, in Example 2, although it comprised so that the position which irradiates the laser beam 190 with a galvanometer mirror may be controlled, it is not necessarily limited to this, A change is possible as appropriate. For example, by arranging a mask that shields the region of the desired electrification pattern between the exposure portion and the semiconductor chip mounting surface 113 of the electrostatic transfer plate 110, and irradiating the laser light 190 to the mask without leaving, The semiconductor chip mounting surface 113 of the electrostatic transfer plate 110 may be irradiated according to a desired charging pattern.

In addition, using a laser array in which light-emitting elements are arranged two-dimensionally, the laser array is controlled to irradiate the laser light 190 only to areas other than the desired electrification pattern, so that the semiconductor chip mounting surface 113 of the electrostatic transfer plate 110 is may be configured to irradiate according to a desired electrification pattern.

Moreover, in Example 2, although the exposure process was comprised so that the laser beam 190 might be irradiated to the semiconductor chip mounting surface 113, it is not necessarily limited to this, A change is possible as appropriate. For example, you may comprise the exposure process so that light, such as visible light, not a laser beam, may be irradiated to the semiconductor chip mounting surface 113. FIG. In other words, the exposure process may be configured to irradiate the semiconductor chip mounting surface 113 with light energy according to a desired charging pattern.

As described above, in the second embodiment, the electrostatic transfer plate includes an insulating layer having photoconductivity, and the surface of the insulating layer is the semiconductor chip mounting surface;

The charging step includes a uniform charging step of uniformly charging the semiconductor chip mounting surface;

By forming the desired charging pattern on the semiconductor chip mounting surface of the electrostatic transfer plate by an exposure step of irradiating light energy to the semiconductor chip mounting surface according to the desired charging pattern, the desired charging pattern is reliably formed can do.

In addition, the insulating layer has photoconductivity, the surface of the insulating layer is the semiconductor chip mounting surface,

a uniform charging device for uniformly charging the semiconductor chip mounting surface in the charging pattern forming device;

By having an exposure apparatus that irradiates light energy to the semiconductor chip mounting surface in accordance with the desired charging pattern, it is possible to reliably form a desired charging pattern.

The pickup method, pickup device, and mounting device in the present invention can be widely used in the field of picking up a desired semiconductor chip from a plurality of arrayed semiconductor chips.

1: semiconductor chip
2: bump
3: carrier substrate
10: electrostatic transfer plate
11: plate
12: insulating layer
13: semiconductor chip mounting surface
20: electrostatic transfer plate transfer head
30: electrification pattern forming device
31: protruding electrode part
32: non-protrusion
40: positive voltage
50 : wit
51: pedestal
52: insulator
60: wit battle device
70: positive voltage
80: substrate
90: laser light
110: electrostatic transfer plate
112: insulating layer
113: semiconductor chip mounting surface
130: electrification pattern forming device
131: uniform electrification
190: laser light

Claims (8)

A pickup method for picking up a semiconductor chip by means of an electrostatic transfer plate having a semiconductor chip mounting surface as the outermost layer, the pickup method comprising:
a charging step of forming a desired charging pattern on the semiconductor chip mounting surface;
at least a pick-up step of selectively picking up the semiconductor chips by adsorbing them to the semiconductor chip mounting surface according to the desired charging pattern from among the plurality of semiconductor chips arranged in the array;
The electrostatic transfer plate includes an insulating layer, the surface of the insulating layer is the semiconductor chip mounting surface, and in the charging step, by selectively contacting or approaching an electrode to which a high voltage is applied to the semiconductor chip mounting surface, the and forming the desired electrification pattern on the semiconductor chip mounting surface of an electrostatic transfer plate. A pickup method for picking up a semiconductor chip by means of an electrostatic transfer plate having a semiconductor chip mounting surface as the outermost layer, the pickup method comprising:
a charging step of forming a desired charging pattern on the semiconductor chip mounting surface;
at least a pick-up step of selectively picking up the semiconductor chips by adsorbing them to the semiconductor chip mounting surface according to the desired charging pattern from among the plurality of semiconductor chips arranged in the array;
The electrostatic transfer plate includes an insulating layer having photoconductivity, and a surface of the insulating layer is the semiconductor chip mounting surface;
The charging step includes a uniform charging step of uniformly charging the semiconductor chip mounting surface;
and forming the desired charging pattern on the semiconductor chip mounting surface of the electrostatic transfer plate by an exposure step of irradiating light energy to the semiconductor chip mounting surface according to the desired charging pattern. A pickup device for picking up a semiconductor chip by an electrostatic transfer plate having a semiconductor chip mounting surface as the outermost layer, the pickup device comprising:
a charging pattern forming device for forming a desired charging pattern on the semiconductor chip mounting surface;
a mounting table for arranging a plurality of semiconductor chips;
at least an electrostatic transfer plate transfer head for transferring the electrostatic transfer plate;
The electrostatic transfer plate has an insulating layer, the surface of the insulating layer is the semiconductor chip mounting surface, and the charging pattern forming apparatus selectively contacts or approaches the electrode to which a voltage is applied to the semiconductor chip mounting surface. , to form the desired charging pattern on the semiconductor chip mounting surface of the electrostatic transfer plate,
The electrostatic transfer plate transfer head transfers the electrostatic transfer plate to the mounting table, and selectively places the semiconductor chip among a plurality of the semiconductor chips arranged on the mounting table according to the desired charging pattern, the semiconductor chip is mounted A pickup device, characterized in that the pickup is picked up by adsorption on the surface. A pickup device for picking up a semiconductor chip by an electrostatic transfer plate having a semiconductor chip mounting surface as the outermost layer, the pickup device comprising:
a charging pattern forming device for forming a desired charging pattern on the semiconductor chip mounting surface;
a mounting table for arranging a plurality of semiconductor chips;
at least an electrostatic transfer plate transfer head for transferring the electrostatic transfer plate;
the electrostatic transfer plate has an insulating layer, the insulating layer has photoconductivity, the surface of the insulating layer is the semiconductor chip mounting surface;
a uniform charging device for uniformly charging the semiconductor chip mounting surface in the charging pattern forming device;
an exposure apparatus for irradiating light energy to the semiconductor chip mounting surface according to the desired electrification pattern;
The electrostatic transfer plate transfer head transfers the electrostatic transfer plate to the mounting table, and selectively places the semiconductor chip among a plurality of the semiconductor chips arranged on the mounting table according to the desired charging pattern, the semiconductor chip is mounted A pickup device, characterized in that the pickup is picked up by adsorption on the surface. The said semiconductor chip picked up by the pickup apparatus of Claim 3 or 4 is mounted collectively on a board|substrate, The mounting apparatus characterized by the above-mentioned. 6. The method of claim 5,
The mounting apparatus according to claim 1, wherein the semiconductor chip is an LED chip having a projected area of 50 µm x 50 µm or less. delete delete

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