JP6918537B2 - Pickup method, pickup device, and mounting device - Google Patents

Pickup method, pickup device, and mounting device Download PDF

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JP6918537B2
JP6918537B2 JP2017058622A JP2017058622A JP6918537B2 JP 6918537 B2 JP6918537 B2 JP 6918537B2 JP 2017058622 A JP2017058622 A JP 2017058622A JP 2017058622 A JP2017058622 A JP 2017058622A JP 6918537 B2 JP6918537 B2 JP 6918537B2
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semiconductor chip
mounting surface
transfer plate
electrostatic transfer
charging pattern
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JP2018163900A (en
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岩出　卓
卓 岩出
新井　義之
義之 新井
潤 稲垣
潤 稲垣
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Toray Engineering Co Ltd
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Priority to KR1020197027401A priority patent/KR102416296B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/04—Mounting of components, e.g. of leadless components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips

Description

本発明は、配列された複数の半導体チップから所望の半導体チップをピックアップするピックアップ方法、ピックアップ装置、及び実装装置に関するものである。 The present invention relates to a pickup method, a pickup device, and a mounting device for picking up a desired semiconductor chip from a plurality of arranged semiconductor chips.

半導体チップは、コスト低減のために小型化し、小型化した半導体チップを高速・高精度に実装するための取組みが行われている。特に、ディスプレイに用いられるＬＥＤはマイクロＬＥＤと呼ばれる５０μｍ×５０μｍ以下のＬＥＤチップを数μｍの精度で高速に実装することが求められている。 Semiconductor chips have been miniaturized in order to reduce costs, and efforts are being made to mount the miniaturized semiconductor chips at high speed and with high accuracy. In particular, LEDs used in displays are required to mount LED chips of 50 μm × 50 μm or less, which are called micro LEDs, with an accuracy of several μm at high speed.

特許文献１には、ウェハに格子状に形成された半導体チップに帯状のレーザ光を照射して１ラインまたは複数ラインごとに一括して転写基板２００に転写したのち、転写基板２００に転写された後の複数の半導体チップに帯状のレーザ光を照射して１ラインまたは複数ラインごとに転写基板３００に一括して転写する構成が記載されている。 In Patent Document 1, a semiconductor chip formed in a grid pattern on a wafer is irradiated with a band-shaped laser beam to be collectively transferred to the transfer substrate 200 for each line or a plurality of lines, and then transferred to the transfer substrate 200. A configuration is described in which a plurality of semiconductor chips are irradiated with a band-shaped laser beam and transferred to the transfer substrate 300 for each line or a plurality of lines at once.

特許文献１：特開２０１０−１６１２２１号公報 Patent Document 1: Japanese Unexamined Patent Publication No. 2010-161221

しかしながら、特許文献１記載のものは、一の転写基板から他の転写基板に半導体チップを転写（ピックアップ）する際に、半導体チップが保持されている粘着力等の影響で一の転写基板から分離できず、他の転写基板にスムーズに転写できない恐れがあるという問題があった。 However, the one described in Patent Document 1 is separated from one transfer board due to the influence of the adhesive force held by the semiconductor chip when the semiconductor chip is transferred (picked up) from one transfer board to another transfer board. There was a problem that it could not be transferred smoothly to another transfer substrate.

本発明は、上記問題点を解決して、粘着力等の影響をなくして、半導体チップのピックアップ及び実装を信頼性高く行うことを課題とする。 An object of the present invention is to solve the above problems, eliminate the influence of adhesive strength and the like, and perform pick-up and mounting of a semiconductor chip with high reliability.

上記課題を解決するために本発明は、最表層が半導体チップ載持面を有する静電転写板により半導体チップをピックアップするピックアップ方法であって、
前記半導体チップ載持面に所望の帯電パターンを形成する帯電工程と、
配列された複数の前記半導体チップのうち、前記所望の帯電パターンに応じて前記半導体チップ載持面に吸着させることにより、選択的に前記半導体チップをピックアップするピックアップ工程と、を少なくとも有し、
前記静電転写板は絶縁層を備え、前記絶縁層の表面が前記半導体チップ載持面であり、
前記帯電工程においては、前記半導体チップ載持面に高電圧を印加した電極を選択的に接触又は近接させることにより、前記静電転写板の前記半導体チップ載持面に前記所望の帯電パターンを形成することを特徴とするピックアップ方法を提供するものである。 In order to solve the above problems, the present invention is a pickup method for picking up a semiconductor chip by an electrostatic transfer plate having a semiconductor chip mounting surface on the outermost surface.
A charging step of forming a desired charging pattern on the semiconductor chip mounting surface, and
Among the plurality of semiconductor chips are arranged, said by adsorption to the semiconductor chip diacetic surface, at least organic and pickup step of picking up selectively the semiconductor chip, the in accordance with the desired charge pattern,
The electrostatic transfer plate includes an insulating layer, and the surface of the insulating layer is a mounting surface for the semiconductor chip.
In the charging step, the desired charging pattern is formed on the semiconductor chip mounting surface of the electrostatic transfer plate by selectively contacting or bringing electrodes to which a high voltage is applied to the semiconductor chip mounting surface. It provides a pick-up method characterized by doing so.

この構成により、帯電した静電気で半導体チップをピックアップすることで、粘着力等の影響をなくして、半導体チップのピックアップを信頼性高く行うことができる。 With this configuration, by picking up the semiconductor chip with charged static electricity, the influence of the adhesive force and the like can be eliminated, and the semiconductor chip can be picked up with high reliability.

また、上記課題を解決するために本発明は、最表層が半導体チップ載持面を有する静電転写板により半導体チップをピックアップするピックアップ方法であって、
前記半導体チップ載持面に所望の帯電パターンを形成する帯電工程と、
配列された複数の前記半導体チップのうち、前記所望の帯電パターンに応じて前記半導体チップ載持面に吸着させることにより、選択的に前記半導体チップをピックアップするピックアップ工程と、を少なくとも有し、
前記静電転写板は光導電性を有する絶縁層を備え、前記絶縁層の表面が前記半導体チップ載持面であり、
前記帯電工程が、前記半導体チップ載持面を一様に帯電する一様帯電工程と、
前記所望の帯電パターンに応じて光エネルギーを前記半導体チップ載持面に対して照射する露光工程と、により前記静電転写板の前記半導体チップ載持面に前記所望の帯電パターンを形成するものであることを特徴とするピックアップ方法を提供するものである。 Further, in order to solve the above problems, the present invention is a pickup method for picking up a semiconductor chip by an electrostatic transfer plate having a semiconductor chip mounting surface as the outermost layer.
A charging step of forming a desired charging pattern on the semiconductor chip mounting surface, and
Among the plurality of arranged semiconductor chips, at least a pickup step of selectively picking up the semiconductor chip by adsorbing the semiconductor chip on the mounting surface of the semiconductor chip according to a desired charging pattern is provided.
The electrostatic transfer plate includes an insulating layer having photoconductive property, and the surface of the insulating layer is a mounting surface for the semiconductor chip.
The charging step is a uniform charging step of uniformly charging the semiconductor chip mounting surface.
So as to form the desired charge pattern on said desired the semiconductor chip diacetic surface of the electrostatic transfer plate by an exposure step of irradiating light energy in accordance with the charge pattern to the semiconductor chip diacetic surface It provides a pick-up method characterized by being present .

この構成により、帯電した静電気で半導体チップをピックアップすることで、粘着力等の影響をなくして、半導体チップのピックアップを信頼性高く行うことができる。 With this configuration, by picking up the semiconductor chip with charged static electricity, the influence of the adhesive force and the like can be eliminated, and the semiconductor chip can be picked up with high reliability.

また、上記課題を解決するために本発明は、最表層が半導体チップ載持面を有する静電転写板により半導体チップをピックアップするピックアップ装置であって、
前記半導体チップ載持面に所望の帯電パターンを形成する帯電パターン形成装置と、
複数の半導体チップを配列する載置台と、
前記静電転写板を移載する静電転写板移載ヘッドと、を少なくとも備え、
前記静電転写板は絶縁層を備え、前記絶縁層の表面が前記半導体チップ載持面であり、前記帯電パターン形成装置が、電圧を印加した電極を前記半導体チップ載持面に対して選択的に接触又は近接させることで、前記所望の帯電パターンを前記静電転写板の前記半導体チップ載持面に形成するものであり、
前記静電転写板移載ヘッドは、前記載置台まで前記静電転写板を移載し、前記所望の帯電パターンに応じて、前記載置台に配列された複数の前記半導体チップのうち選択的に前記半導体チップを、前記半導体チップ載持面に吸着してピックアップすることを特徴とするピックアップ装置を提供するものである。 Further, in order to solve the above problems, the present invention is a pickup device that picks up a semiconductor chip by an electrostatic transfer plate whose outermost layer has a semiconductor chip mounting surface.
A charging pattern forming device that forms a desired charging pattern on the semiconductor chip mounting surface,
A mounting table for arranging multiple semiconductor chips and
It is provided with at least an electrostatic transfer plate transfer head for transferring the electrostatic transfer plate.
The electrostatic transfer plate includes an insulating layer, the surface of the insulating layer is the semiconductor chip mounting surface, and the charging pattern forming device selectively selects an electrode to which a voltage is applied with respect to the semiconductor chip mounting surface. The desired charging pattern is formed on the semiconductor chip mounting surface of the electrostatic transfer plate by contacting or approaching the semiconductor chip.
The electrostatic transfer plate transfer head transfers the electrostatic transfer plate to the above-mentioned pedestal, and selectively selects the semiconductor chips arranged on the above-mentioned pedestal according to the desired charging pattern. The present invention provides a pickup device characterized in that the semiconductor chip is attracted to and picked up by the semiconductor chip mounting surface.

この構成により、帯電した静電気で半導体チップをピックアップすることで、粘着力等の影響をなくして、半導体チップのピックアップを信頼性高く行うことができる。 With this configuration, by picking up the semiconductor chip with charged static electricity, the influence of the adhesive force and the like can be eliminated, and the semiconductor chip can be picked up with high reliability.

さらに、上記課題を解決するために本発明は、最表層が半導体チップ載持面を有する静電転写板により半導体チップをピックアップするピックアップ装置であって、
前記半導体チップ載持面に所望の帯電パターンを形成する帯電パターン形成装置と、
複数の半導体チップを配列する載置台と、
前記静電転写板を移載する静電転写板移載ヘッドと、を少なくとも備え、
前記静電転写板は絶縁層を備え、前記絶縁層が光導電性を有するものであり、前記絶縁層の表面が前記半導体チップ載持面であり、
前記帯電パターン形成装置が、前記半導体チップ載持面を一様に帯電する一様帯電装置と、
前記所望の帯電パターンに応じて光エネルギーを前記半導体チップ載持面に対して照射する露光装置と、を有し、
前記静電転写板移載ヘッドは、前記載置台まで前記静電転写板を移載し、前記所望の帯電パターンに応じて、前記載置台に配列された複数の前記半導体チップのうち選択的に前記半導体チップを、前記半導体チップ載持面に吸着してピックアップすることを特徴とするピックアップ装置を提供するものである。 Further, in order to solve the above problems, the present invention is a pickup device that picks up a semiconductor chip by an electrostatic transfer plate whose outermost layer has a semiconductor chip mounting surface.
A charging pattern forming device that forms a desired charging pattern on the semiconductor chip mounting surface,
A mounting table for arranging multiple semiconductor chips and
It is provided with at least an electrostatic transfer plate transfer head for transferring the electrostatic transfer plate.
The electrostatic transfer plate includes an insulating layer, the insulating layer has photoconductive property, and the surface of the insulating layer is the mounting surface of the semiconductor chip.
A uniform charging device in which the charging pattern forming device uniformly charges the semiconductor chip mounting surface,
It has an exposure apparatus that irradiates the semiconductor chip mounting surface with light energy according to the desired charging pattern.
The electrostatic transfer plate transfer head transfers the electrostatic transfer plate to the above-mentioned pedestal, and selectively selects the semiconductor chips arranged on the above-mentioned pedestal according to the desired charging pattern. The present invention provides a pickup device characterized in that the semiconductor chip is attracted to and picked up by the semiconductor chip mounting surface.

この構成により、帯電した静電気で半導体チップをピックアップすることで、粘着力等の影響をなくして、半導体チップのピックアップを信頼性高く行うことができる。 With this configuration, by picking up the semiconductor chip with charged static electricity, the influence of the adhesive force and the like can be eliminated, and the semiconductor chip can be picked up with high reliability.

ピックアップ装置によりピックアップした前記半導体チップを、基板上に一括して実装する構成としてもよい。 The semiconductor chips picked up by the pick-up device may be collectively mounted on the substrate.

この構成により、粘着力等の影響をなくして、静電転写板にピックアップされた半導体チップの実装を信頼性高く行うことができる。 With this configuration, the semiconductor chip picked up on the electrostatic transfer plate can be mounted with high reliability without being affected by the adhesive force or the like.

前記半導体チップが５０μm×５０μm以下の投影面積を有するＬＥＤチップである構成としてもよい。 The semiconductor chip may be an LED chip having a projected area of 50 μm × 50 μm or less.

この構成により、高精細なディスプレイ装置を実現することができる。 With this configuration, a high-definition display device can be realized.

本発明のピックアップ方法、ピックアップ装置、及び実装装置により、粘着力等の影響をなくして、半導体チップのピックアップ及び実装を信頼性高く行うことができる。 With the pickup method, the pickup device, and the mounting device of the present invention, it is possible to pick up and mount the semiconductor chip with high reliability without being affected by the adhesive force and the like.

本発明の実施例１における載置台帯電工程及びキャリア基板分離工程を説明する図である。It is a figure explaining the mounting table charging process and the carrier substrate separation process in Example 1 of this invention. 本発明の実施例１における帯電工程を説明する図である。It is a figure explaining the charging process in Example 1 of this invention. 本発明の実施例１におけるピックアップ工程の前半を説明する図である。It is a figure explaining the first half of the pick-up process in Example 1 of this invention. 本発明の実施例１におけるピックアップ工程の後半を説明する図である。It is a figure explaining the latter half of the pick-up process in Example 1 of this invention. 本発明の実施例１における実装工程を説明する図である。It is a figure explaining the mounting process in Example 1 of this invention. 本発明の実施例２における一様帯電工程を説明する図である。It is a figure explaining the uniform charging process in Example 2 of this invention. 本発明の実施例２における露光工程を説明する図である。It is a figure explaining the exposure process in Example 2 of this invention.

本発明の実施例１について、図１〜図５を参照して説明する。図１は、本発明の実施例１における載置台帯電工程及びキャリア基板分離工程を説明する図である。図２は、本発明の実施例１における帯電工程を説明する図である。図３は、本発明の実施例１におけるピックアップ工程の前半を説明する図である。図４は、本発明の実施例１におけるピックアップ工程の後半を説明する図である。図５は、本発明の実施例１における実装工程を説明する図である。 Example 1 of the present invention will be described with reference to FIGS. 1 to 5. FIG. 1 is a diagram illustrating a mounting table charging step and a carrier substrate separation step in the first embodiment of the present invention. FIG. 2 is a diagram illustrating a charging process according to the first embodiment of the present invention. FIG. 3 is a diagram illustrating the first half of the pick-up process according to the first embodiment of the present invention. FIG. 4 is a diagram illustrating the latter half of the pickup process according to the first embodiment of the present invention. FIG. 5 is a diagram illustrating a mounting process according to the first embodiment of the present invention.

図１（ｂ）、図１（ｃ）に示すように、サファイヤからなるキャリア基板３に半導体チップ１が成長させられて形成されており、半導体チップ１はキャリア基板３に保持された一方の面と反対側の面である他方の面が外部に露出しバンプ２が形成されている。また、キャリア基板３は円形又は四角形を有しており、サファイヤ以外にガリウムヒ素からなるものもある。また、半導体チップ１はダイシングされてキャリア基板３に複数個（数百個〜数万個）が２次元に配列されている。マイクロＬＥＤと呼ばれる小型の半導体チップ１では、５０μｍ×５０μｍ以下のサイズであり、このサイズにダイシング幅を加えたピッチで配列されている。このような小型の半導体チップ１は、高精度（例えば、１μｍ以下の精度）に回路基板に実装することが求められている。実施例１における半導体チップ１は、事前に各半導体チップ１を検査し不良のＬＥＤチップを除去している。具体的には、後述のレーザリフトオフの場合よりも強いレーザ光を照射し、不良チップを焼失させている。 As shown in FIGS. 1 (b) and 1 (c), the semiconductor chip 1 is formed by growing the semiconductor chip 1 on the carrier substrate 3 made of sapphire, and the semiconductor chip 1 is one surface held by the carrier substrate 3. The other surface, which is the surface opposite to the above surface, is exposed to the outside and the bump 2 is formed. Further, the carrier substrate 3 has a circular shape or a quadrangular shape, and some of them are made of gallium arsenide in addition to sapphire. Further, the semiconductor chip 1 is diced and a plurality (hundreds to tens of thousands) of the semiconductor chips 1 are arranged two-dimensionally on the carrier substrate 3. The small semiconductor chip 1 called a micro LED has a size of 50 μm × 50 μm or less, and is arranged at a pitch obtained by adding the dicing width to this size. Such a small semiconductor chip 1 is required to be mounted on a circuit board with high accuracy (for example, an accuracy of 1 μm or less). In the semiconductor chip 1 of the first embodiment, each semiconductor chip 1 is inspected in advance to remove defective LED chips. Specifically, it irradiates a stronger laser beam than in the case of laser lift-off, which will be described later, and burns out defective chips.

まず、キャリア基板３及びキャリア基板３に保持された半導体チップ１を載置台５０にしっかりと保持させるために、図１（ａ）に示すように、載置台５０の表面全域を帯電させる載置台帯電工程を実行する。載置台帯電工程では、載置台帯電装置６０の表面を載置台５０の表面全域に接触または、近接させて、およそ１ＫＶのプラス電圧７０を印加する。載置台５０は、鉄等の金属からなる台５１と台５１の載置台帯電装置６０を接触させる側の表面に設けられたガラスからなる絶縁体５２とからなる。この載置台５０の絶縁体５２にプラス電圧を印加することにより、載置台５０の表面全域がプラス電位に帯電する。 First, in order to firmly hold the carrier substrate 3 and the semiconductor chip 1 held by the carrier substrate 3 on the mounting table 50, as shown in FIG. 1A, the mounting table charging is performed to charge the entire surface of the mounting table 50. Perform the process. In the mounting table charging step, the surface of the mounting table charging device 60 is brought into contact with or close to the entire surface of the mounting table 50, and a positive voltage 70 of about 1 KV is applied. The mounting table 50 is composed of a table 51 made of metal such as iron and an insulator 52 made of glass provided on the surface of the table 51 on the side where the mounting table charging device 60 is brought into contact with each other. By applying a positive voltage to the insulator 52 of the mounting table 50, the entire surface of the mounting table 50 is charged with a positive potential.

なお、実施例１においては、載置台５０をプラス電位に帯電させているが、必ずしもこれに限定されず適宜変更が可能である。例えば、マイナス電位に帯電させてもよい。その場合、帯電列にしたがって、絶縁体５２をテフロン（登録商標）やポリプロピレン等の材料で構成すればよい。 In Example 1, the mounting table 50 is charged to a positive potential, but the present invention is not necessarily limited to this and can be changed as appropriate. For example, it may be charged to a negative potential. In that case, the insulator 52 may be made of a material such as Teflon (registered trademark) or polypropylene according to the charged train.

また、実施例１においては、載置台５０の表面を帯電させるために、載置台帯電装置６０の表面を載置台５０の表面全域に接触又は近接させる構成としたが、必ずしもこれに限定されず適宜変更が可能である。例えば、一列にコロナ放電部を配列させた帯電バーを用いて、この帯電バーを載置台５０の表面に接触又は近接させてコロナ放電部の配列方向と直交する方向に載置台５０に対して相対移動させるように構成してもよい。これにより簡単な構成で載置台５０の表面に帯電させることができる。 Further, in the first embodiment, in order to charge the surface of the mounting table 50, the surface of the mounting table charging device 60 is configured to be in contact with or close to the entire surface of the mounting table 50, but the present invention is not necessarily limited to this and is appropriate. It can be changed. For example, using a charging bar in which the corona discharge parts are arranged in a row, the charging bar is brought into contact with or close to the surface of the mounting table 50 and is relative to the mounting table 50 in a direction orthogonal to the arrangement direction of the corona discharge parts. It may be configured to move. As a result, the surface of the mounting table 50 can be charged with a simple structure.

次に、載置台帯電装置６０を取り除いた後、図示しないキャリア基板移載ヘッドにより、キャリア基板３に一方の面が保持された複数の半導体チップ１の他方の面を表面が帯電された載置台５０に載置する（図１（ｂ）参照）。これにより、キャリア基板３を保持された半導体チップ１の他方の面は、静電気によって載置台５０に保持させられる。 Next, after removing the mounting table charging device 60, a mounting table whose surface is charged on the other surface of a plurality of semiconductor chips 1 in which one surface is held by the carrier substrate 3 by a carrier substrate transfer head (not shown). Place on 50 (see FIG. 1 (b)). As a result, the other surface of the semiconductor chip 1 holding the carrier substrate 3 is held by the mounting table 50 by static electricity.

そして、キャリア基板３から半導体チップ１の一方の面を分離するキャリア基板分離工程を実行する。実施例１においては、図示しないキャリア基板分離装置により、キャリア基板３に対してライン状にエキシマレーザからなるレーザ光９０を照射し、キャリア基板３又はライン状のレーザ光９０のいずれかをレーザ光９０のラインと直交する方向に相対移動させてキャリア基板３全体にレーザ光を照射する（図１（ｃ）参照）。そして、サファイヤからなるキャリア基板３におけるＧａＮ層の一部をＧａとＮに分解させて、キャリア基板３から半導体チップ１を分離する。この手法はレーザリフトオフと呼ばれる。分離したキャリア基板３は、キャリア基板移載ヘッド２０により除去することができる。 Then, a carrier substrate separation step of separating one surface of the semiconductor chip 1 from the carrier substrate 3 is executed. In the first embodiment, a carrier substrate separating device (not shown) irradiates the carrier substrate 3 with a line-shaped laser beam 90 composed of an excima laser, and either the carrier substrate 3 or the line-shaped laser beam 90 is irradiated with the laser beam. The entire carrier substrate 3 is irradiated with laser light by moving relative to the line 90 (see FIG. 1 (c)). Then, a part of the GaN layer in the carrier substrate 3 made of sapphire is decomposed into Ga and N to separate the semiconductor chip 1 from the carrier substrate 3. This technique is called laser lift-off. The separated carrier substrate 3 can be removed by the carrier substrate transfer head 20.

以上で、実装すべき半導体チップ１が載置台５０に保持される。そして、キャリア基板分離工程と並行して、又はキャリア基板分離工程の後に、最表層が半導体チップ載持面１３を有する静電転写板１０により半導体チップ１をピックアップする帯電工程を実行する（図２参照）。静電転写板１０は鉄等の金属からなる板１１と板１１の一方側には絶縁層１２を有している。この絶縁層１２の板１１側とは反対側の表面を、本明細書においては、半導体チップ載持面と呼ぶ。帯電工程では、半導体チップ載持面１３を帯電パターン形成装置３０に接触又は近接させて所望の帯電パターンを半導体チップ載持面１３に形成する。 With the above, the semiconductor chip 1 to be mounted is held on the mounting table 50. Then, in parallel with the carrier substrate separation step or after the carrier substrate separation step, a charging step of picking up the semiconductor chip 1 by the electrostatic transfer plate 10 having the semiconductor chip mounting surface 13 on the outermost layer is executed (FIG. 2). reference). The electrostatic transfer plate 10 has a plate 11 made of a metal such as iron and an insulating layer 12 on one side of the plate 11. The surface of the insulating layer 12 opposite to the plate 11 side is referred to as a semiconductor chip mounting surface in this specification. In the charging step, the semiconductor chip mounting surface 13 is brought into contact with or close to the charging pattern forming apparatus 30 to form a desired charging pattern on the semiconductor chip mounting surface 13.

つまり、帯電パターン形成装置３０は、図２に示すように、その表面の一部が突出した複数の突出電極部３１と突出していない複数の非突出部３２とを備えている。帯電パターン形成装置３０にはおよそ１ＫＶのプラス電圧４０が印加されており、載置台５０に配列されている複数の半導体チップ１のうち所望の半導体チップ１の配列ピッチに合わせたピッチで２次元に（図２の奥行き方向にも）突出電極部３１が突出している。静電転写板移載ヘッド２０で静電転写板１０を真空吸着して保持し、この帯電パターン形成装置３０の突出電極部３１の先端部に静電転写板１０の半導体チップ載持面１３を接触又は近接させる。 That is, as shown in FIG. 2, the charging pattern forming apparatus 30 includes a plurality of protruding electrode portions 31 having a part of its surface protruding, and a plurality of non-protruding portions 32 having no protrusions. A positive voltage 40 of about 1 KV is applied to the charging pattern forming apparatus 30, and the two-dimensional pitch is matched to the arrangement pitch of the desired semiconductor chips 1 among the plurality of semiconductor chips 1 arranged on the mounting table 50. The protruding electrode portion 31 protrudes (also in the depth direction of FIG. 2). The electrostatic transfer plate transfer head 20 vacuum attracts and holds the electrostatic transfer plate 10, and the semiconductor chip mounting surface 13 of the electrostatic transfer plate 10 is placed on the tip of the protruding electrode portion 31 of the charging pattern forming apparatus 30. Make contact or proximity.

そして、帯電パターン形成装置３０の突出電極部３１に印加されている高電圧により、静電転写板１０における突出電極部３１が接触している半導体チップ載持面１３の部分にプラス電位が帯電される。つまり、帯電パターン形成装置３０における突出電極部３１を形成した所望領域に接触した静電転写板１０の半導体チップ載持面１３にプラス電位が帯電して所望の帯電パターンが形成される。このとき、実際には突出電極部３１に接触した部分に加えて、その周囲のわずかな領域に帯電させられることがあるため、所望領域よりも小さい面積を接触させるように突出電極部３１を構成してもよい。 Then, the high voltage applied to the protruding electrode portion 31 of the charging pattern forming apparatus 30 charges a positive potential to the portion of the semiconductor chip mounting surface 13 in contact with the protruding electrode portion 31 of the electrostatic transfer plate 10. NS. That is, a positive potential is charged on the semiconductor chip mounting surface 13 of the electrostatic transfer plate 10 in contact with the desired region on which the protruding electrode portion 31 of the charging pattern forming apparatus 30 is formed, and a desired charging pattern is formed. At this time, in addition to the portion actually in contact with the protruding electrode portion 31, a small area around the protruding electrode portion 31 may be charged. Therefore, the protruding electrode portion 31 is configured so as to contact an area smaller than the desired region. You may.

つまり、帯電工程では、静電転写板１０の半導体チップ載持面１３に対して、所望領域には電圧を印加した突出電極３１を接触させ、所望領域以外には電圧を印加した突出電極３１を接触させないように非突出部３２を形成した帯電パターン形成装置３０により、所望の帯電パターンを形成することができる。 That is, in the charging step, the protruding electrode 31 to which the voltage is applied is brought into contact with the semiconductor chip mounting surface 13 of the electrostatic transfer plate 10 in the desired region, and the protruding electrode 31 to which the voltage is applied is brought into contact with the region other than the desired region. A desired charging pattern can be formed by the charging pattern forming apparatus 30 in which the non-protruding portion 32 is formed so as not to come into contact with each other.

なお、実施例１においては、複数の突出電極部３１と複数の非突出部３２とを備えた帯電パターン形成装置３０を静電転写板１０の半導体チップ載持面１３に接触又は近接させて所望の帯電パターンを形成するように構成したが、必ずしもこれに限定されず適宜変更が可能である。例えば、単一の電極部を移動させながら静電転写板１０の絶縁層１２に接触又は近接させて所望の帯電パターンを形成するように構成してもよい。すなわち、帯電工程においては、絶縁層１２に高電圧を印加した電極を選択的に接触又は近接させることにより、所望の帯電パターンを形成すればよい。 In the first embodiment, it is desired that the charging pattern forming apparatus 30 provided with the plurality of protruding electrode portions 31 and the plurality of non-projecting portions 32 is brought into contact with or close to the semiconductor chip mounting surface 13 of the electrostatic transfer plate 10. Although it is configured to form the charging pattern of, it is not necessarily limited to this and can be changed as appropriate. For example, the single electrode portion may be moved and brought into contact with or close to the insulating layer 12 of the electrostatic transfer plate 10 to form a desired charging pattern. That is, in the charging step, a desired charging pattern may be formed by selectively contacting or bringing the electrodes to which a high voltage is applied to the insulating layer 12 into contact with each other or close to each other.

また、実施例１においては、複数の半導体チップ１をピックアップするように所望の帯電パターンを形成するように構成したが、必ずしもこれに限定されず適宜変更が可能である。例えば、一の半導体チップ１をピックアップするように所望の帯電パターンを形成するように構成してもよい。 Further, in the first embodiment, a desired charging pattern is formed so as to pick up a plurality of semiconductor chips 1, but the present invention is not necessarily limited to this and can be appropriately changed. For example, it may be configured to form a desired charging pattern so as to pick up one semiconductor chip 1.

さらに、実施例１においては、静電転写板１０をプラス電位に帯電させているが、必ずしもこれに限定されず適宜変更が可能である。例えば、マイナス電位に帯電させてもよい。その場合、帯電列にしたがって、絶縁層１２をテフロンやポリプロピレン等の材料で構成すればよい。 Further, in the first embodiment, the electrostatic transfer plate 10 is charged to a positive potential, but the present invention is not necessarily limited to this and can be appropriately changed. For example, it may be charged to a negative potential. In that case, the insulating layer 12 may be made of a material such as Teflon or polypropylene according to the charged train.

次に、静電転写板１０を載置台５０上の半導体チップ１に重ねて接触させピックアップするが、その直前に載置台５０の表面に帯電した電位を除電しておく。除電は、載置台５０に光放電やＡＣ除電等により行うことができる。除電すると、静電気によって載置台５０に保持されていた半導体チップ１が躍ることもあるので、静電転写板１０によりピックアップする直前に除電する。 Next, the electrostatic transfer plate 10 is placed on the semiconductor chip 1 on the mounting table 50 and brought into contact with the semiconductor chip 1 to be picked up. Immediately before that, the electric potential charged on the surface of the mounting table 50 is eliminated. The static elimination can be performed on the mounting table 50 by light discharge, AC static elimination, or the like. When static electricity is removed, the semiconductor chip 1 held on the mounting table 50 may jump due to static electricity, so the static electricity is removed immediately before picking up by the electrostatic transfer plate 10.

そして、ピックアップ工程を実行して、配列された複数の前記半導体チップのうち、所望の帯電パターンに応じて半導体チップ載持面１３に吸着させることにより、選択的に半導体チップをピックアップする。すなわち、所望の帯電パターンに帯電した静電転写板１０は、静電転写板移載ヘッド２０が吸着して載置台５０に載置された半導体チップ１まで移載し（図３（ａ）参照）、静電転写板１０の所望の帯電パターンに帯電した半導体チップ載持面１３が選択的に半導体チップ１に重なるように接触させる（図３（ｂ）参照）。そして、静電転写板移載ヘッド２０が載置台５０から離れるに伴って、静電転写板１０も載置台５０から離れる。このとき、静電転写板１０には、静電気によって所望の帯電パターンに応じた複数の半導体チップ１が吸着してピックアップされる（図４参照）。 Then, the pickup step is executed, and the semiconductor chips are selectively picked up by adsorbing the semiconductor chips on the semiconductor chip mounting surface 13 according to a desired charging pattern among the plurality of arranged semiconductor chips. That is, the electrostatic transfer plate 10 charged with the desired charging pattern is transferred to the semiconductor chip 1 mounted on the mounting table 50 by the electrostatic transfer plate transfer head 20 being adsorbed (see FIG. 3A). ), The semiconductor chip mounting surface 13 charged in the desired charging pattern of the electrostatic transfer plate 10 is selectively brought into contact with the semiconductor chip 1 (see FIG. 3B). Then, as the electrostatic transfer plate transfer head 20 separates from the mounting table 50, the electrostatic transfer plate 10 also separates from the mounting table 50. At this time, a plurality of semiconductor chips 1 corresponding to a desired charging pattern are attracted to and picked up by static electricity on the electrostatic transfer plate 10 (see FIG. 4).

ここで、所望の帯電パターンに応じてピックアップするのであれば、載置台５０上の半導体チップ１の集合の特定の位置からピックアップする必要はなく、どこの部分からピックアップしてもよい。 Here, if picking up according to a desired charging pattern, it is not necessary to pick up from a specific position of the set of semiconductor chips 1 on the mounting table 50, and picking up from any part may be performed.

実施例１においては、基板に実装するピッチ及び配列数に相当する半導体チップ１を選択的にピックアップすることで、後述の実装工程に効率よく移行できるようにしている。 In the first embodiment, the semiconductor chips 1 corresponding to the pitch and the number of arrays to be mounted on the substrate are selectively picked up so that the process can be efficiently shifted to the mounting process described later.

なお、実施例１においては、ピックアップ工程に先立って載置台５０の表面に帯電した電位を除電しておくように構成したが、必ずしもこれに限定されず適宜変更が可能である。例えば、載置台５０の表面は帯電したままとし、帯電工程で静電転写板１０の半導体チップ載持面１３に載置台５０に帯電している電位よりも高い電位（例えば、２ＫＶ程度）を帯電してピックアップ工程を実行するように構成してもよい。これにより、載置台５０の表面に帯電した電位の除電が不要となるとともに、容易に半導体チップ１をピックアップすることができる。 In the first embodiment, the electric potential charged on the surface of the mounting table 50 is eliminated prior to the pick-up process, but the present invention is not limited to this and can be changed as appropriate. For example, the surface of the mounting table 50 is left charged, and the semiconductor chip mounting surface 13 of the electrostatic transfer plate 10 is charged with a potential higher than the potential charged on the mounting table 50 (for example, about 2 KV) in the charging process. It may be configured to execute the pick-up process. As a result, it is not necessary to eliminate the electric potential charged on the surface of the mounting table 50, and the semiconductor chip 1 can be easily picked up.

次に、実装工程を実行して静電転写板１０に保持された半導体チップ１を基板８０に実装する。すなわち、静電転写板移載ヘッド２０が静電転写板１０を吸着して基板８０まで移載して静電転写板１０に保持されている半導体チップ１を基板８０に実装する。実装に際しては、半導体チップ１のバンプ２と基板８０の電極とを金属接合により行う（図５（ａ）参照）。そして、静電転写板移載ヘッド２０が真空吸着を解除して静電転写板１０から離れることによって静電転写板１０と半導体チップ１が基板８０に残り、実装工程が完了する。つまり、静電転写板移載ヘッド２０は、静電転写板１０にピックアップされた半導体チップ１を静電転写板１０とともに実装する。 Next, the mounting step is executed to mount the semiconductor chip 1 held on the electrostatic transfer plate 10 on the substrate 80. That is, the electrostatic transfer plate transfer head 20 attracts the electrostatic transfer plate 10 and transfers it to the substrate 80, and mounts the semiconductor chip 1 held on the electrostatic transfer plate 10 on the substrate 80. At the time of mounting, the bump 2 of the semiconductor chip 1 and the electrode of the substrate 80 are metal-bonded (see FIG. 5A). Then, when the electrostatic transfer plate transfer head 20 releases the vacuum adsorption and separates from the electrostatic transfer plate 10, the electrostatic transfer plate 10 and the semiconductor chip 1 remain on the substrate 80, and the mounting process is completed. That is, the electrostatic transfer plate transfer head 20 mounts the semiconductor chip 1 picked up on the electrostatic transfer plate 10 together with the electrostatic transfer plate 10.

その後、必要に応じて、静電転写板１０の除電を行って、静電転写板１０を半導体チップ１から取り去ることができる。除電は、静電転写板１０に光放電やＡＣ除電等により行うことができる。また、半導体チップ１は、基板に接合されているので、静電転写板１０の帯電が軽ければ、除電しなくても静電転写板移載ヘッド２０で真空吸着して取り去ることもできる。 After that, if necessary, the electrostatic transfer plate 10 can be statically removed to remove the electrostatic transfer plate 10 from the semiconductor chip 1. Static electricity elimination can be performed on the electrostatic transfer plate 10 by light discharge, AC static electricity elimination, or the like. Further, since the semiconductor chip 1 is bonded to the substrate, if the electrostatic transfer plate 10 is lightly charged, it can be removed by vacuum adsorption with the electrostatic transfer plate transfer head 20 without static electricity removal.

なお、実施例１においては、キャリア基板移載ヘッドによりキャリア基板を移載し、静電転写板移載ヘッドにより静電転写板を移載するように構成したが、必ずしもこれに限定されず適宜変更が可能である。例えば、共通の移載ヘッドにより、キャリア基板及び静電転写板を移載するように構成してもよい。 In the first embodiment, the carrier substrate is transferred by the carrier substrate transfer head, and the electrostatic transfer plate is transferred by the electrostatic transfer plate transfer head, but the present invention is not necessarily limited to this and is appropriate. It can be changed. For example, the carrier substrate and the electrostatic transfer plate may be configured to be transferred by a common transfer head.

このように、実施例１においては、最表層が半導体チップ載持面を有する静電転写板により半導体チップをピックアップするピックアップ方法であって、
前記半導体チップ載持面に所望の帯電パターンを形成する帯電工程と、
配列された複数の前記半導体チップのうち、前記所望の帯電パターンに応じて前記半導体チップ載持面に吸着させることにより、選択的に前記半導体チップをピックアップするピックアップ工程と、を少なくとも有することを特徴とするピックアップ方法により、粘着力等の影響をなくして、静電転写板にピックアップされた半導体チップの実装を信頼性高く行うことができる。 As described above, in the first embodiment, the pickup method of picking up the semiconductor chip by the electrostatic transfer plate having the outermost surface layer having the semiconductor chip mounting surface.
A charging step of forming a desired charging pattern on the semiconductor chip mounting surface, and
It is characterized by having at least a pickup step of selectively picking up the semiconductor chip by adsorbing it on the mounting surface of the semiconductor chip according to the desired charging pattern among the plurality of arranged semiconductor chips. According to the pickup method, the semiconductor chip picked up on the electrostatic transfer plate can be mounted with high reliability without being affected by the adhesive force or the like.

また、最表層が半導体チップ載持面を有する静電転写板により半導体チップをピックアップするピックアップ装置であって、
前記半導体チップ載持面に所望の帯電パターンを形成する帯電パターン形成装置と、
複数の半導体チップを配列する載置台と、
前記静電転写板を移載する静電転写板移載ヘッドと、を少なくとも備え、
前記静電転写板移載ヘッドは、前記載置台まで前記静電転写板を移載し、前記所望の帯電パターンに応じて、前記載置台に配列された複数の前記半導体チップのうち選択的に前記半導体チップを、前記半導体チップ載持面に吸着してピックアップすることを特徴とするピックアップ装置により、粘着力等の影響をなくして、静電転写板にピックアップされた半導体チップの実装を信頼性高く行うことができる。 Further, it is a pickup device that picks up a semiconductor chip by an electrostatic transfer plate whose outermost layer has a semiconductor chip mounting surface.
A charging pattern forming device that forms a desired charging pattern on the semiconductor chip mounting surface,
A mounting table for arranging multiple semiconductor chips and
It is provided with at least an electrostatic transfer plate transfer head for transferring the electrostatic transfer plate.
The electrostatic transfer plate transfer head transfers the electrostatic transfer plate to the above-mentioned pedestal, and selectively selects the semiconductor chips arranged on the above-mentioned pedestal according to the desired charging pattern. The pickup device, which is characterized by adsorbing the semiconductor chip on the mounting surface of the semiconductor chip and picking it up, eliminates the influence of adhesive force and the like, and makes the mounting of the semiconductor chip picked up on the electrostatic transfer plate reliable. Can be done high.

本発明の実施例２は、帯電パターン形成装置及び帯電工程の構成が実施例１と異なっている。実施例２について、図６、図７を参照して説明する。図６は、本発明の実施例２における一様帯電工程を説明する図である。図７は、本発明の実施例２における露光工程を説明する図である。 In Example 2 of the present invention, the configuration of the charging pattern forming apparatus and the charging process is different from that of Example 1. The second embodiment will be described with reference to FIGS. 6 and 7. FIG. 6 is a diagram illustrating a uniform charging process according to a second embodiment of the present invention. FIG. 7 is a diagram illustrating an exposure process according to a second embodiment of the present invention.

実施例２においては、帯電パターン形成装置が実行する帯電工程は、一様帯電工程と露光工程とで構成される。 In the second embodiment, the charging step executed by the charging pattern forming apparatus includes a uniform charging step and an exposure step.

実施例２における静電転写板１１０は鉄等の金属からなる板１１と板１１の一方の面には光導電性を有する絶縁層１１２を備え、その表面が半導体チップ載持面１１３である。一様帯電工程では、静電転写板移載ヘッド２０が吸着保持している静電転写板１１０の半導体チップ載持面１１３を帯電パターン形成装置１３の表面が一様に平坦面である一様帯電部１３１に接触又は近接させる（図６参照）。一様帯電部１３１は、およそ１ＫＶの電圧が印加されており、これにより、静電転写板１１０の半導体チップ載持面１１３は、一様にプラス電位が帯電する。その後、静電転写板移載ヘッド２０により静電転写板１１０を一様帯電部１３１から離す。 The electrostatic transfer plate 110 in the second embodiment is provided with an insulating layer 112 having photoconductivity on one surface of the plate 11 made of a metal such as iron and the plate 11, and the surface thereof is a semiconductor chip mounting surface 113. In the uniform charging step, the surface of the charging pattern forming apparatus 13 is uniformly flat on the semiconductor chip mounting surface 113 of the electrostatic transfer plate 110 that is adsorbed and held by the electrostatic transfer plate transfer head 20. It is brought into contact with or close to the charged portion 131 (see FIG. 6). A voltage of about 1 KV is applied to the uniformly charged portion 131, whereby the semiconductor chip mounting surface 113 of the electrostatic transfer plate 110 is uniformly charged with a positive potential. After that, the electrostatic transfer plate transfer head 20 separates the electrostatic transfer plate 110 from the uniformly charged portion 131.

次に、露光工程を実行して、静電転写板１１０の半導体チップ載持面１１３に所望の帯電パターンを形成する。すなわち、静電転写板移載ヘッド２０が吸着保持している静電転写板１１０の半導体チップ載持面１１３に対して、図示しない露光部からレーザ光１９０を照射する（図７（ａ）参照）。レーザ光１９０を半導体チップ載持面１１３に対して照射することにより、光導電性を有する絶縁層１１２の導電率が増加して帯電している電位が消失する。したがって、レーザ光１９０を照射した領域は帯電が消失し、レーザ光１９０を照射しない領域は帯電したままとすることができる。実施例２においては、この性質を利用して、静電転写板１１０の半導体チップ載持面１１３に対して、所望の帯電パターンに応じて、レーザ光１９０を照射しない領域とレーザ光１９０を照射する領域とを選択する。これにより、静電転写板１１０の半導体チップ載持面１１３に所望の帯電パターンを形成させることができる（図７（ｂ）参照）。 Next, an exposure step is executed to form a desired charging pattern on the semiconductor chip mounting surface 113 of the electrostatic transfer plate 110. That is, the laser beam 190 is irradiated from an exposed portion (not shown) to the semiconductor chip mounting surface 113 of the electrostatic transfer plate 110 attracted and held by the electrostatic transfer plate transfer head 20 (see FIG. 7A). ). By irradiating the semiconductor chip mounting surface 113 with the laser beam 190, the conductivity of the photoconductive insulating layer 112 increases and the charged potential disappears. Therefore, the charge disappears in the region irradiated with the laser beam 190, and the region not irradiated with the laser beam 190 can remain charged. In the second embodiment, utilizing this property, the semiconductor chip mounting surface 113 of the electrostatic transfer plate 110 is irradiated with a region not irradiated with the laser beam 190 and the laser beam 190 according to a desired charging pattern. Select the area to be used. As a result, a desired charging pattern can be formed on the semiconductor chip mounting surface 113 of the electrostatic transfer plate 110 (see FIG. 7B).

レーザ光１９０を照射しない領域とレーザ光１９０を照射する領域とを選択するには、露光部にガルバノミラーを備え、ガルバノミラーにレーザビームを照射してレーザ光１９０を照射する位置を制御することで行うことができる。 In order to select a region that does not irradiate the laser beam 190 and a region that irradiates the laser beam 190, a galvano mirror is provided in the exposed portion, and the galvano mirror is irradiated with the laser beam to control the position of irradiating the laser beam 190. Can be done with.

なお、実施例２においては、ガルバノミラーによってレーザ光１９０を照射する位置を制御するように構成したが、必ずしもこれに限定されず適宜変更が可能である。例えば、所望の帯電パターンの領域を遮蔽したマスクを露光部と静電転写板１１０の半導体チップ載持面１１３の間に配置して、レーザ光１９０をマスクに対してまんべんなく照射することにより、静電転写板１１０の半導体チップ載持面１１３における所望の帯電パターンに応じて照射させるように構成してもよい。 In the second embodiment, the position where the laser beam 190 is irradiated is controlled by the galvanometer mirror, but the position is not necessarily limited to this and can be changed as appropriate. For example, a mask that shields a region of a desired charging pattern is placed between the exposed portion and the semiconductor chip mounting surface 113 of the electrostatic transfer plate 110, and the laser beam 190 is evenly applied to the mask to generate static electricity. It may be configured to irradiate according to a desired charging pattern on the semiconductor chip mounting surface 113 of the electric transfer plate 110.

また、２次元に発光素子を配列したレーザアレイを用いて、所望の帯電パターン以外の領域にのみレーザ光１９０を照射するようにレーザアレイを制御して静電転写板１１０の半導体チップ載持面１１３に所望の帯電パターンに応じて照射させるように構成してもよい。 Further, using a laser array in which light emitting elements are arranged two-dimensionally, the laser array is controlled so as to irradiate the laser beam 190 only in a region other than the desired charging pattern, and the semiconductor chip mounting surface of the electrostatic transfer plate 110 is mounted. The 113 may be configured to irradiate according to a desired charging pattern.

さらに、実施例２においては、レーザ光１９０を半導体チップ載持面１１３に照射するように露光工程を構成したが、必ずしもこれに限定されず適宜変更が可能である。例えば、レーザ光ではない可視光等の光を半導体チップ載持面１１３に照射するように露光工程を構成してもよい。つまり、所望の帯電パターンに応じて光エネルギーを半導体チップ載持面１１３に対して照射するように露光工程を構成すればよい。 Further, in the second embodiment, the exposure step is configured so as to irradiate the semiconductor chip mounting surface 113 with the laser beam 190, but the exposure process is not necessarily limited to this, and can be appropriately changed. For example, the exposure process may be configured to irradiate the semiconductor chip mounting surface 113 with light such as visible light other than laser light. That is, the exposure step may be configured so as to irradiate the semiconductor chip mounting surface 113 with light energy according to a desired charging pattern.

このように、実施例２においては、前記静電転写板は光導電性を有する絶縁層を備え、前記絶縁層の表面が前記半導体チップ載持面であり、
前記帯電工程が、前記半導体チップ載持面を一様に帯電する一様帯電工程と、
前記所望の帯電パターンに応じて光エネルギーを前記半導体チップ載持面に対して照射する露光工程と、により前記静電転写板の前記半導体チップ載持面に前記所望の帯電パターンを形成するものであることにより、確実に所望の帯電パターンを形成することができる。 As described above, in the second embodiment, the electrostatic transfer plate is provided with an insulating layer having photoconductive property, and the surface of the insulating layer is the mounting surface of the semiconductor chip.
The charging step is a uniform charging step of uniformly charging the semiconductor chip mounting surface.
The desired charging pattern is formed on the semiconductor chip mounting surface of the electrostatic transfer plate by an exposure step of irradiating the semiconductor chip mounting surface with light energy according to the desired charging pattern. This makes it possible to reliably form a desired charging pattern.

また、前記絶縁層が光導電性を有するものであり、前記絶縁層の表面が前記半導体チップ載持面であり、
前記帯電パターン形成装置が、前記半導体チップ載持面を一様に帯電する一様帯電装置と、
前記所望の帯電パターンに応じて光エネルギーを前記半導体チップ載持面に対して照射する露光装置と、を有したことにより、確実に所望の帯電パターンを形成することができる。 Further, the insulating layer has photoconductive property, and the surface of the insulating layer is the mounting surface of the semiconductor chip.
A uniform charging device in which the charging pattern forming device uniformly charges the semiconductor chip mounting surface,
By having an exposure device that irradiates the semiconductor chip mounting surface with light energy according to the desired charging pattern, the desired charging pattern can be reliably formed.

本発明におけるピックアップ方法、ピックアップ装置、及び実装装置は、配列された複数の半導体チップから所望の半導体チップをピックアップする分野に広く用いることができる。 The pick-up method, the pick-up device, and the mounting device in the present invention can be widely used in the field of picking up a desired semiconductor chip from a plurality of arranged semiconductor chips.

１：半導体チップ ２：バンプ ３：キャリア基板 １０：静電転写板 １１：板 １２：絶縁層 １３：半導体チップ載持面 ２０：静電転写板移載ヘッド ３０：帯電パターン形成装置 ３１：突出電極部 ３２：非突出部 ４０： プラス電圧 ５０：載置台 ５１：台 ５２：絶縁体 ６０：載置台帯電装置 ７０：プラス電圧 ８０：基板 ９０：レーザ光 １１０：静電転写板 １１２：絶縁層 １１３：半導体チップ載持面 １３０：帯電パターン形成装置 １３１：一様帯電部 １９０：レーザ光 1: Semiconductor chip 2: Bump 3: Carrier substrate 10: Electrostatic transfer plate 11: Plate 12: Insulation layer 13: Semiconductor chip mounting surface 20: Electrostatic transfer plate transfer head 30: Charging pattern forming device 31: Protruding electrode Part 32: Non-protruding part 40: Positive voltage 50: Mounting stand 51: Stand 52: Insulator 60: Mounting stand Charging device 70: Positive voltage 80: Substrate 90: Laser light 110: Electrostatic transfer plate 112: Insulation layer 113: Semiconductor chip mounting surface 130: Charging pattern forming device 131: Uniform charging unit 190: Laser light

Claims (6)

最表層が半導体チップ載持面を有する静電転写板により半導体チップをピックアップするピックアップ方法であって、
前記半導体チップ載持面に所望の帯電パターンを形成する帯電工程と、
配列された複数の前記半導体チップのうち、前記所望の帯電パターンに応じて前記半導体チップ載持面に吸着させることにより、選択的に前記半導体チップをピックアップするピックアップ工程と、を少なくとも有し、
前記静電転写板は絶縁層を備え、前記絶縁層の表面が前記半導体チップ載持面であり、
前記帯電工程においては、前記半導体チップ載持面に高電圧を印加した電極を選択的に接触又は近接させることにより、前記静電転写板の前記半導体チップ載持面に前記所望の帯電パターンを形成することを特徴とするピックアップ方法。 This is a pickup method in which a semiconductor chip is picked up by an electrostatic transfer plate whose outermost layer has a semiconductor chip mounting surface.
A charging step of forming a desired charging pattern on the semiconductor chip mounting surface, and
Among the plurality of semiconductor chips are arranged, said by adsorption to the semiconductor chip diacetic surface, at least organic and pickup step of picking up selectively the semiconductor chip, the in accordance with the desired charge pattern,
The electrostatic transfer plate includes an insulating layer, and the surface of the insulating layer is a mounting surface for the semiconductor chip.
In the charging step, the desired charging pattern is formed on the semiconductor chip mounting surface of the electrostatic transfer plate by selectively contacting or bringing electrodes to which a high voltage is applied to the semiconductor chip mounting surface. A pickup method characterized by doing. 最表層が半導体チップ載持面を有する静電転写板により半導体チップをピックアップするピックアップ方法であって、
前記半導体チップ載持面に所望の帯電パターンを形成する帯電工程と、
配列された複数の前記半導体チップのうち、前記所望の帯電パターンに応じて前記半導体チップ載持面に吸着させることにより、選択的に前記半導体チップをピックアップするピックアップ工程と、を少なくとも有し、
前記静電転写板は光導電性を有する絶縁層を備え、前記絶縁層の表面が前記半導体チップ載持面であり、
前記帯電工程が、前記半導体チップ載持面を一様に帯電する一様帯電工程と、
前記所望の帯電パターンに応じて光エネルギーを前記半導体チップ載持面に対して照射する露光工程と、により前記静電転写板の前記半導体チップ載持面に前記所望の帯電パターンを形成するものであることを特徴とするピックアップ方法。 This is a pickup method in which a semiconductor chip is picked up by an electrostatic transfer plate whose outermost layer has a semiconductor chip mounting surface.
A charging step of forming a desired charging pattern on the semiconductor chip mounting surface, and
Among the plurality of arranged semiconductor chips, at least a pickup step of selectively picking up the semiconductor chip by adsorbing the semiconductor chip on the mounting surface of the semiconductor chip according to a desired charging pattern is provided.
The electrostatic transfer plate includes an insulating layer having photoconductive property, and the surface of the insulating layer is a mounting surface for the semiconductor chip.
The charging step is a uniform charging step of uniformly charging the semiconductor chip mounting surface.
The desired charging pattern is formed on the semiconductor chip mounting surface of the electrostatic transfer plate by an exposure step of irradiating the semiconductor chip mounting surface with light energy according to the desired charging pattern. A pickup method characterized by being present. 最表層が半導体チップ載持面を有する静電転写板により半導体チップをピックアップするピックアップ装置であって、
前記半導体チップ載持面に所望の帯電パターンを形成する帯電パターン形成装置と、
複数の半導体チップを配列する載置台と、
前記静電転写板を移載する静電転写板移載ヘッドと、を少なくとも備え、
前記静電転写板は絶縁層を備え、前記絶縁層の表面が前記半導体チップ載持面であり、前記帯電パターン形成装置が、電圧を印加した電極を前記半導体チップ載持面に対して選択的に接触又は近接させることで、前記所望の帯電パターンを前記静電転写板の前記半導体チップ載持面に形成するものであり、
前記静電転写板移載ヘッドは、前記載置台まで前記静電転写板を移載し、前記所望の帯電パターンに応じて、前記載置台に配列された複数の前記半導体チップのうち選択的に前記半導体チップを、前記半導体チップ載持面に吸着してピックアップすることを特徴とするピックアップ装置。 A pickup device that picks up a semiconductor chip with an electrostatic transfer plate whose outermost layer has a semiconductor chip mounting surface.
A charging pattern forming device that forms a desired charging pattern on the semiconductor chip mounting surface,
A mounting table for arranging multiple semiconductor chips and
It is provided with at least an electrostatic transfer plate transfer head for transferring the electrostatic transfer plate.
The electrostatic transfer plate includes an insulating layer, the surface of the insulating layer is the semiconductor chip mounting surface, and the charging pattern forming device selectively selects an electrode to which a voltage is applied with respect to the semiconductor chip mounting surface. The desired charging pattern is formed on the semiconductor chip mounting surface of the electrostatic transfer plate by contacting or approaching the semiconductor chip.
The electrostatic transfer plate transfer head transfers the electrostatic transfer plate to the above-mentioned pedestal, and selectively selects the semiconductor chips arranged on the above-mentioned pedestal according to the desired charging pattern. A pickup device characterized in that the semiconductor chip is attracted to the mounting surface of the semiconductor chip and picked up. 最表層が半導体チップ載持面を有する静電転写板により半導体チップをピックアップするピックアップ装置であって、
前記半導体チップ載持面に所望の帯電パターンを形成する帯電パターン形成装置と、
複数の半導体チップを配列する載置台と、
前記静電転写板を移載する静電転写板移載ヘッドと、を少なくとも備え、
前記静電転写板は絶縁層を備え、前記絶縁層が光導電性を有するものであり、前記絶縁層の表面が前記半導体チップ載持面であり、
前記帯電パターン形成装置が、前記半導体チップ載持面を一様に帯電する一様帯電装置と、
前記所望の帯電パターンに応じて光エネルギーを前記半導体チップ載持面に対して照射する露光装置と、を有し、
前記静電転写板移載ヘッドは、前記載置台まで前記静電転写板を移載し、前記所望の帯電パターンに応じて、前記載置台に配列された複数の前記半導体チップのうち選択的に前記半導体チップを、前記半導体チップ載持面に吸着してピックアップすることを特徴とするピックアップ装置。 A pickup device that picks up a semiconductor chip with an electrostatic transfer plate whose outermost layer has a semiconductor chip mounting surface.
A charging pattern forming device that forms a desired charging pattern on the semiconductor chip mounting surface,
A mounting table for arranging multiple semiconductor chips and
It is provided with at least an electrostatic transfer plate transfer head for transferring the electrostatic transfer plate.
The electrostatic transfer plate includes an insulating layer, the insulating layer has photoconductive property, and the surface of the insulating layer is the mounting surface of the semiconductor chip.
A uniform charging device in which the charging pattern forming device uniformly charges the semiconductor chip mounting surface,
It has an exposure apparatus that irradiates the semiconductor chip mounting surface with light energy according to the desired charging pattern.
The electrostatic transfer plate transfer head transfers the electrostatic transfer plate to the above-mentioned pedestal, and selectively selects the semiconductor chips arranged on the above-mentioned pedestal according to the desired charging pattern. A pickup device characterized in that the semiconductor chip is attracted to the mounting surface of the semiconductor chip and picked up. 請求項３又は４に記載のピックアップ装置によりピックアップした前記半導体チップを、基板上に一括して実装することを特徴とする実装装置。 A mounting device characterized in that the semiconductor chips picked up by the pick-up device according to claim 3 or 4 are collectively mounted on a substrate. 前記半導体チップが５０μm×５０μm以下の投影面積を有するＬＥＤチップであることを特徴とする請求項５に記載の実装装置。 The mounting device according to claim 5 , wherein the semiconductor chip is an LED chip having a projected area of 50 μm × 50 μm or less.
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