TWI832923B - Semiconductor device manufacturing method - Google Patents

Abstract

The present invention is a method for manufacturing a semiconductor device, characterized by forming a resin layer (13) on a bump forming surface (2A) of a bump member (2) on which a plurality of bumps (22) are formed. The process of irradiating the resin layer (13) with laser (LB) to remove the resin layer (13) covering the surface of the bump (22).

Description

Semiconductor device manufacturing method

The present invention relates to a method of manufacturing a semiconductor device.

In recent years, along with the miniaturization and thinning of electronic devices, the requirements for thinning and miniaturization of semiconductor packages have also increased. Therefore, as a method of mounting semiconductor elements, instead of the conventional wire bonding method of connecting using metal wires, a method has been proposed in which protruding electrodes called bumps are formed on the electrodes of the wafer and the substrate is directly connected to the bumps. Installation method of flip-chip connection between electrodes and chip electrodes. In such a flip-chip connection type mounting method, a resin layer is provided to cover the bumped wafer and bumped wafer, etc. for various purposes. Examples of such a resin layer include an adhesive layer for bonding the bumped wafer and the substrate, an underfill layer for reinforcing the connection between the bumped wafer and the substrate, and an underfill layer for protecting the bumped wafer. Round or protective layer with bump wafer, etc. However, when the resin layer covers the bumps, the resin layer on the bumps must be mechanically removed to ensure the electrical connection between the bumps and the electrodes of the substrate. Therefore, there is a problem in the reliability of the connection between the bumped chip and the substrate. In addition, when the bumped chip and the substrate are connected through the reflow process, the molten solder from the bump is covered by the resin layer, and the automatic alignment effect cannot be obtained (even if the electrodes of the chip and the substrate are connected) Deviations occur due to poor positional adjustment accuracy, and are automatically corrected to normal positions during reflow). In order to solve such a problem, for example, it is proposed to include a process of forming a resin layer on a bump forming surface of a bump member with a plurality of bumps, and subjecting the resin layer to plasma treatment, and A method of removing the resin layer covering the bump surface (Reference Document 1: International Publication No. 2016/194431). In addition, in order to solve the above-mentioned problems, for example, it is also proposed to include a process of forming a resin layer on a bump forming surface of a bump-attached member on which a plurality of bumps are formed, and to remove the coating of the bumps by grinding. The method of engineering the aforementioned resin layer on the surface of the block (Reference Document 2: Japanese Patent Application Laid-Open No. 2017-84903). In the method described in Document 1, plasma is irradiated not only in the area of the resin layer to be removed but also in the entire area within the irradiation surface. That is, not only the resin layer covering the top of the bump head, but also the resin layer covering the portion to be protected is also irradiated with plasma. Therefore, the parts intended to be protected are also affected by plasma irradiation, which may cause deterioration and damage. In addition, the method described in Document 2 is a method of removing the resin layer by grinding, and the chopper, grinder, or surface planer comes into contact with the resin layer covering the bumps, and the bumps are added with Mechanical load. Therefore, the position of the bump may be shifted or the bump may fall off, which may reduce the connection reliability.

Therefore, an object of the present invention is to provide a method for manufacturing a semiconductor device that can efficiently manufacture a semiconductor device with excellent connection reliability by preventing deterioration and damage of the portion with the bump member that is originally intended to be protected. A method for manufacturing a semiconductor device according to an aspect of the present invention includes the steps of forming a resin layer on a bump forming surface of a bump member with a plurality of bumps, and irradiating the resin layer with laser light. , and remove the process of covering the aforementioned resin layer on the surface of the aforementioned bump. According to this structure, a resin layer can be provided for various purposes on the bump forming surface with the bump member. Examples of the resin layer include an adhesive layer for bonding the bumped wafer and the substrate, an underfill layer for reinforcing the connection between the bumped wafer and the substrate, and a protective layer for protecting the bumped wafer. Attached with bump chip protective layer, etc. Furthermore, the resin layer covering the surface of the bump can be easily and efficiently removed by laser irradiation. The laser irradiation method makes it easy to control the irradiation position, and by selectively irradiating the laser to the parts that must be removed in the resin layer, it can prevent the parts with the bump members that are originally intended to be protected from deterioration and damage. . In addition, if the laser irradiation method is used instead of the grinding method, a chopper, a grinder, or a surface planer comes into contact with the resin layer covering the bumps, thereby preventing the bumps from shifting and falling off. Furthermore, by electrically connecting the electrodes of the bumps and the substrate by removing the resin layer covering the bump surface and exposing the surface, a semiconductor device with excellent connection reliability can be efficiently manufactured. In the method of manufacturing a semiconductor device according to one aspect of the present invention, it is preferable that the method further includes a process of bonding the dicing tape on a surface opposite to the bump formation surface. According to this configuration, the bump-attached member is in contact with the dicing tape, thereby suppressing positional deviation of the bump during laser irradiation. Therefore, by suppressing the positional shift of the focus of the laser with respect to the resin layer covering the bumps, the resin layer can be removed more reliably. In the method of manufacturing a semiconductor device according to one aspect of the present invention, it is preferable that the method further includes a process of electrically connecting the bumps and the electrodes of the substrate by removing the resin layer and exposing the surface. According to this structure, a semiconductor device with excellent connection reliability can be obtained by electrically connecting the bumps and the electrodes of the substrate by removing the resin layer covering the bump surface and exposing the surface. In the method of manufacturing a semiconductor device according to an aspect of the present invention, it is preferable that the step of removing the resin layer is a step of removing the resin layer covering the top portion of the bump by using the laser. According to this structure, since the resin layer on the top of the bump head is removed, the top of the bump head is exposed, and the connection reliability of the electrical connection between the electrode of the substrate and the top of the bump head can be improved. In the method for manufacturing a semiconductor device according to one aspect of the present invention, the laser is preferably a Yb laser, a YVO laser, a YAG laser, or a CO ₂ laser. With this configuration, the resin layer can be efficiently removed by irradiating the resin layer with Yb laser, YVO laser, YAG laser, or CO ₂ laser. In the manufacturing method of a semiconductor device according to one aspect of the present invention, as the laser irradiation conditions, the output is 1 W or more and 2 W or less, the frequency is 10 kHz or more and 100 kHz or less, and the scanning speed is 50 mm/s or more and 4000 mm/s or less. good. According to this configuration, since the output, frequency and scanning speed of the laser irradiation conditions are within a specific range, the resin layer can be removed efficiently.

[First Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The present invention is not limited to the embodiments. However, in the drawings, some parts are shown enlarged or reduced for ease of explanation. First, the adhesive sheet and the bumped wafer used in this embodiment will be described. (Adhesive sheet) FIG. 1 shows an adhesive sheet 1 used in this embodiment. The adhesive sheet 1 used in this embodiment includes a support layer 11, an adhesive layer 12, and a resin layer 13 containing an adhesive. However, the surface of the resin layer 13 may be adhered between the wafers and may be protected by a release film or the like. As the support layer 11, a known support can be used as a support for the adhesive sheet, for example, a plastic film or the like can be used. In this way, the support layer 11 is placed between the objects to be processed and supports the objects to be processed. Examples of the plastic film system include: polyethylene film, polypropylene film, polybutylene film, polybutadiene rubber film, polymethylpentene film, polyvinyl chloride film, vinyl chloride copolymer film, polyvinyl chloride copolymer film, Ethylene phthalate film, polyethylene naphthalate film, polybutylene terephthalate film, polyurethane film, ethylene vinyl acetate copolymer film, ionomer resin film, ethylene･(methyl ) Methyl acrylate copolymer film, ethylene (meth)acrylate copolymer film, polystyrene film, polycarbonate film, polyimide film, and fluororesin film, etc. These films can also be single-layer films or laminated films. In addition, in the case of laminating films, one type of film may be laminated, or two types of films may be laminated. The adhesive layer 12 is formed using a known adhesive as an adhesive for bonding the sheet. Through the adhesive layer 12, the support layer 11 and the resin layer 13 are firmly fixed between the objects to be processed, and then the resin layer 13 is fixed to the object and remains peeled off from the support layer 11. Become easy. However, the adhesive layer 12 may be hardened by being irradiated with energy rays such as ultraviolet rays, so that the adhesive layer 12 may be easily peeled off from the resin layer 13 . Examples of the adhesive layer include acrylic adhesives, rubber adhesives, silicone adhesives, urethane adhesives, and the like. The resin layer 13 can be formed using a known adhesive as an adhesive that adheres to the sheet. When passing through the resin layer 13 containing such an adhesive, the bump wafer 2 a and the substrate 4 described later can be connected. Examples of the adhesive system include adhesives containing a thermosetting resin such as epoxy resin and a thermosetting agent. In addition, the adhesive may further contain an inorganic filler from the viewpoint of adjusting the thermal expansion coefficient of the cured product. Examples of inorganic fillers include silicon dioxide, alumina, talc, calcium carbonate, titanium dioxide, ocher hematite, silicon carbide, and boron carbide. These inorganic fillers can be used alone or in combination of two or more types. (Bumped Wafer) FIG. 2 shows a bumped wafer 2 (bumped member) used in this embodiment. The bumped wafer 2 used in this embodiment includes a semiconductor wafer 21 and bumps 22 . However, the bumps 22 are formed on the circuit side of the semiconductor wafer 21 . The bumped wafer 2 of this embodiment is provided with a plurality of bumps 22 . The bumped wafer 2 has a bump-formed surface 2A on which a plurality of bumps 22 are formed, and a back surface 2B on which no bumps 22 are formed. As the semiconductor wafer 21, a known semiconductor wafer can be used, for example, a silicon wafer or the like can be used. The thickness of the semiconductor wafer 21 is generally 10 μm or more and 1000 μm or less, and ideally is 50 μm or more and 750 μm or less. The bumps 22 may be made of publicly known conductive materials. Examples of materials for the bumps 22 include any material selected from the group consisting of copper, silver, gold, aluminum, and solder alloys. As the solder alloy, publicly known solder materials can be used. For example, lead-free solder containing tin, silver, and copper can be used. The height of the bumps 22 is usually 5 μm or more and 1000 μm or less, and is ideally 50 μm or more and 500 μm or less. The cross-sectional shape viewed from the side of the bump 22 is not particularly limited, but may also be semicircular, semielliptical, circular, rectangular, or trapezoidal. The type of bumps 22 is not particularly limited, but examples thereof include ball bumps, mushroom-shaped bumps, columnar bumps, cone-shaped bumps, cylindrical bumps, dot-shaped bumps, and rectangular bumps. And other columnar bumps, etc. One type of these bumps may be used alone, or two or more types may be used in combination. (Method for Manufacturing Semiconductor Device) Next, a method for manufacturing a semiconductor device according to this embodiment will be described. 3A to 3C and 4A to 4C are explanatory diagrams showing a method of manufacturing a semiconductor device according to the first embodiment of the present invention. In the method of manufacturing a semiconductor device according to this embodiment, first, the resin layer 13 is formed on the bump formation surface 2A of the bump wafer 2 on which a plurality of bumps 22 are formed. Specifically, as shown in FIG. 3A, FIG. 3B, and FIG. 3C, through a process including: bonding the resin layer 13 of the adhesive sheet 1 to the bump formation surface 2A of the bump-attached wafer 2 (the adhesive sheet bonding process), and the process of bonding the dicing tape 3 to the back surface 2B of the bumped wafer 2 (the dicing tape bonding process), and the process of bonding the support layer 11 and the adhesive layer 12 of the sheet 1, In the process of peeling off the resin layer 13 (support peeling process), the resin layer 13 is formed on the bump formation surface 2A of the bump wafer 2 on which a plurality of bumps 22 are formed. In the method of manufacturing a semiconductor device according to this embodiment, next, as shown in FIG. 4A , the resin layer 13 covering the surface of the bump 22 is irradiated with laser to remove the resin layer 13 (resin removal process). However, in this embodiment, part of the bump 22 is removed simultaneously with the resin layer 13, but only the resin layer 13 may be removed. Furthermore, as shown in FIGS. 4B and 4C , the process includes: a process (dicing process) of cutting the bumped wafer 2 with a dicing blade, and picking up the bumped wafer 2 a individualized by cutting, and then In the process (bonding process) of fixing the substrate 4 to the substrate 4, the resin layer 13 is electrically connected to expose the bumps 22 on the surface and the electrodes 42 of the substrate 4. Hereinafter, the subsequent sheet bonding process, the dicing tape bonding process, the support peeling process, the resin removal process, the cutting process, and the bonding process are explained in more detail. (Adhering sheet bonding process) In the adhering sheet bonding process, as shown in FIG. 3A , the resin layer 13 of the adhesive sheet 1 is bonded to the surface (bump) formed by the bumps of the bump wafer 2 Block forming surface 2A). After the sheet 1 is attached, the bumps 22 are covered through the resin layer 13 . Here, as the bonding method, a known method can be used and is not particularly limited, but a method of pressing is preferred. The pressing system is usually performed while pressing the bonded sheet 1 via a pressing roller or the like. The conditions for pressing are not particularly limited, but the pressing temperature is preferably from 40°C to 120°C. The roller pressure system is preferably between 0.1MPa and 20MPa. The pressing speed is preferably 1 mm/sec or more and 20 mm/sec or less. In addition, the thickness of the resin layer 13 attached to the sheet 1 is preferably smaller than the height dimension of the bumps 22, and is preferably less than 0.8 times the height dimension of the bumps 22, and the height dimension of the bumps 22 is Those between 0.1 times and 0.7 times are particularly ideal. If the thickness of the resin layer 13 is below the aforementioned upper limit, the resin layer 13 covering the surface of the bump 22 can be made thinner and can be easily removed by the resin removal process described below. (Dicing tape bonding process) In the dicing tape bonding process, as shown in FIG. 3B , the dicing tape 3 is bonded to the unformed surface (back surface) of the bump 22 of the bump wafer 2 . 2B). Here, as the bonding method, a known method can be used and is not particularly limited, but a method of pressing is preferred. The pressing system is usually performed while pressing the dicing belt 3 via a pressing roller or the like. The pressing conditions are not particularly limited and can be set appropriately. In addition, as the crystal cutting belt 3, a well-known crystal cutting belt can also be used. (Support Peeling Process) In the support peeling process, as shown in FIG. 3C , the support layer 11 and the adhesive layer 12 adhering to the sheet 1 are peeled off from the resin layer 13 . Through this support peeling process, the bumped wafer 2 with the resin layer 13 formed on the bump formation surface 2A can be obtained. In addition, the resin layer 13 is preferably formed to follow the shape of the bumps 22 . In this way, the resin layer 13 to be removed in the resin removal process described below can be reduced, thereby improving work efficiency. When the adhesive layer 12 has ultraviolet curability, ultraviolet rays are irradiated from the support layer 11 side as necessary. As a result, the adhesive layer 12 hardens, and the adhesive force at the interface between the adhesive layer 12 and the resin layer 13 decreases, making it easier to peel the adhesive layer 12 from the resin layer 13 . (Resin Removal Process) In the resin removal process, as shown in FIG. 4A , laser LB is irradiated toward the resin layer 13 covering the surface of the bump 22 to remove the resin layer 13 . The resin layer 13 can be removed depending on its purpose. For example, if the purpose is to electrically connect the bumps 22 with exposed surfaces to the electrodes 42 of the substrate 4, the resin layer 13 may be removed to the extent that the electrical connection is possible. Specifically, the removal amount of the resin layer 13 can be adjusted from the viewpoint of a balance between connection reliability and ensuring the function of the resin layer 13 . Accordingly, the laser LB may not be irradiated to the entire resin layer 13 . As mentioned above, if the bump 22 is electrically connected to the electrode 42 of the substrate 4, a part of the resin layer 13 covering the surface of the bump 22 (for example, the front end portion (top part) of the bump 22) ), selectively irradiate laser LB to remove the resin layer 13 covering the top of the head. In this way, when the resin layer 13 covering the top of the bump 22 is removed by laser irradiation, the surface of the bump 22 is exposed. In addition, in the resin removal process, the laser LB can be selectively irradiated to the area of the resin layer 13 to be removed, and the portion with the bump member that is originally intended to be protected does not need to be irradiated with the laser LB. , which can prevent deterioration and damage to the part with the bump member that is originally intended to be protected. Examples of the portions of the bump-attached member that are intended to be protected include the base portion of the bump 22 , the bump formation surface 2A, and the back surface 2B of the semiconductor wafer 21 . In addition, when the resin layer 13 is removed by grinding, a chopper, a grinder, a surface planer, etc. are in contact with the resin layer 13 covering the bumps 22. Therefore, a mechanical force is added to the bumps 22. However, in the resin removal process of this embodiment, such a mechanical load is not applied to the bumps 22, and the resin layer 13 can be removed. In the resin removal process, as shown in FIG. 4A , the laser irradiation device 50 is arranged to face the bump 22 . The portion of the resin layer 13 covering the bump 22 to be removed is irradiated while scanning the laser LB. For example, when the removal of the resin layer 13 is completed for one bump 22 , the laser irradiation device 50 is moved, and the resin layer 13 is removed in the same manner for the other bumps 22 . In this way, by repeatedly removing the resin layer 13 for each bump 22 , it is possible to selectively remove part of the resin layer 13 covering the plurality of bumps 22 provided in the bumped wafer 2 (for example, covering the bumps 22 ). The resin layer 13) on top of the head of block 22. In this embodiment, in the resin removal process, not only the resin layer 13 covering the top of the bump 22 but also the exposed top is irradiated with laser LB, and the bump 22 is removed as shown in FIG. 4A Front-end part. In this way, by removing a part of the bumps 22 (for example, the front end part) through the laser LB, the heights of the plurality of bumps 22 can be adjusted to any desired height. In addition, the heights of the plurality of bumps 22 may be set to a uniform height. Furthermore, by grinding part of the bump 22, the surface of the bump 22 can be reliably exposed, and the surface area of the bump 22 exposed from the resin layer 13 can be increased. In the resin removal process, the laser irradiation device 50 is used to irradiate the laser LB. The laser irradiation device 50 is not particularly limited, for example, it can irradiate the laser that can remove the resin layer 13 . In addition, in the case where not only the resin layer 13 but also a part of the bump 22 is removed, a laser irradiation device that irradiates laser that can remove both is not particularly limited. For example, as the laser irradiation device 50, a laser irradiation device for laser engraving may be used. The laser LB system is, for example, Yb laser, YVO laser, YAG laser, or CO ₂ laser. The oscillation form of the laser is not limited to the form described in this specification. The irradiation conditions of the laser LB are conditions that can remove the resin layer 13 (and the bumps 22 if necessary), and are not particularly limited. The output of the laser is preferably 1W or more and 2W or less, for example. The frequency of the laser is preferably 10 kHz or more and 100 kHz or less, for example. The scanning speed of the laser is preferably 50 mm/s or more and 4000 mm/s or less. However, in the resin removal process, it is preferable not to remove the resin layer 13 so that the laser irradiation surface is smooth, but to remove the resin layer 13 so as to have uneven surfaces. For example, in the resin removal process, as shown in FIG. 4A , it is preferable that unevenness remains on the plane formed by the bump 22 and the resin layer 13 . In this way, if the unevenness remains, when the bumped wafer 2a is connected to the electrode 42 of the substrate 4 in the bonding process described later, a gap is formed between the bumped wafer 2a and the bumped wafer 2a through the concave portion of the unevenness. between the electrodes 42 of the substrate 4 . Since there is space for the bumps 22 or the resin layer 13 to move in this gap, the bumps 22 can be covered and connected at the same time. Therefore, in this embodiment, connection reliability can be improved compared to the case where the bumped wafer 2 a has a smooth flat surface where the bumps 22 and the resin layer 13 are joined. (Dicing Process) In the dicing process, as shown in FIG. 4B , the bumped wafer 2 is cut using a dicing knife. By doing this, the two bumped wafers can be divided into two bumped wafers 2 a. The cutting device is not particularly limited, and a known cutting device can be used. In addition, the cutting conditions are not particularly limited. However, instead of using a cutting knife, laser cutting, invisible cutting, etc. can also be used. (Joining process) In the bonding process, as shown in FIG. 4C , the bump-attached wafer 2 a that has been cut into individual pieces is picked up, and then fixed to the substrate 4 provided with the base material 41 and the electrode 42 . The bump 22 with the bump chip 2a has the resin layer 13 removed to expose the surface, so that the bump 22 and the electrode 42 of the substrate 4 can be electrically connected. The substrate 4 is not particularly limited, but a lead frame, a wiring board, a silicon wafer or a silicon chip having a circuit formed on the surface, etc. can be used. The material of the base material 41 is not particularly limited, but examples thereof include ceramics, plastics, and the like. Examples of the plastic system include epoxy, bismaleic anhydride imide triazine, polyimide, and the like. During the joining process, heat treatment may also be performed as necessary to harden the adhesive of the resin layer 13 . The conditions of the heat treatment can be appropriately set according to the type of adhesive, etc. In the bonding process, a reflow process may also be performed as necessary to melt the bumps 22 of the bumped wafer 2a, so that the bumped wafer 2a and the substrate 4 are soldered and joined. The conditions of the reflow treatment can be appropriately set according to the type of solder, etc. As described above, the semiconductor device 100 can be manufactured. (Operations and Effects of the First Embodiment) According to this embodiment, the following operations and effects can be obtained. (1) The resin layer 13 covering the surface of the bump 22 can be easily and efficiently removed by laser irradiation. In addition, even if the cross-sectional shape viewed from the side of the bump 22 is semicircular, semi-elliptical, circular, rectangular or trapezoidal, the resin layer 13 covering the surface of the bump 22 can be removed. (2) According to the laser irradiation method, the irradiation position of the laser LB can be easily controlled, and in the resin layer 13, the laser LB can be selectively irradiated at the places that must be removed, thereby preventing the attachment of bump crystals. Deterioration and damage to the part of circle 2 that was originally intended to be protected. (3) If the laser irradiation method, such as a grinding method, a chopper, a grinder, or a surface planer comes into contact with the resin layer 13 covering the bumps 22, the positional deviation of the bumps 22 can be prevented, and The bump 22 has fallen off. (4) By electrically connecting the bump 22 and the electrode 42 of the substrate 4 by removing the resin layer 13 covering the surface of the bump 22 and exposing the surface, a semiconductor device 100 with excellent connection reliability can be obtained. (5) Furthermore, when the front end portion of the bump 22 is removed by irradiating the laser LB through the resin layer 13 covering not only the top portion of the bump 22 but also the exposed top portion, the front end portion of the bump 22 can be arbitrarily uniform. The height of the bump 22 is regarded as consistent. If the height of the bumps 22 is set to be an arbitrary uniform height, poor connection caused by the height of the bumps 22 or unevenness can be prevented. By doing this, a semiconductor device excellent in connection reliability can be obtained. (6) In the resin removal process, since the bumped wafer 2 is attached to the dicing belt 3 and the laser LB is irradiated on the bumps 22, it is possible to suppress the bumping during the irradiation of the laser LB. The position of block 22 is offset. As a result, the positional shift of the focus of the laser LB with respect to the resin layer 13 covering the bumps 22 is suppressed, and the resin layer 13 can be removed more reliably. (7) An adhesive layer (resin layer 13) to which the bump wafer 2a and the substrate 4 are attached may be provided on the bump forming surface 2A of the bump wafer 2a. (8) Since the resin layer 13 is provided on the bumped wafer 2, the resin layer 13 covering the surface of the bump 22 is removed, and then the resin layer 13 is diced into the bumped wafer 2a. Therefore, the resin layer 13 can be provided in an integrated manner. A plurality of bump wafers 2a are attached. [Second Embodiment] Hereinafter, a second embodiment of the present invention will be described based on the drawings. However, the adhesive sheet 1 and the substrate 4 of this embodiment are substantially the same as the adhesive sheet 1 and the substrate 4 of the first embodiment, and their detailed descriptions are omitted or simplified. 5A, 5B, 5C and 5D are explanatory diagrams showing a method of manufacturing a semiconductor device according to the second embodiment. In the first embodiment described above, after the resin layer 13 is formed on the bumped wafer 2 , laser irradiation is performed to remove the resin layer 13 , and then the resin layer 13 is separated into individual bumped wafers 2 a by dicing. On the other hand, in the second embodiment, after the resin layer 13 is formed on the bumped wafer 2 a that has been singulated in advance, the resin layer 13 is irradiated with the laser LB. In the method of manufacturing a semiconductor device according to this embodiment, first, a resin layer 13 is formed on the bump formation surface 2A of the bump wafer 2 a on which a plurality of bumps 22 are formed. Specifically, as shown in FIGS. 5A and 5B , by including a process of bonding the resin layer 13 of the adhesive sheet 1 to the bump formation surface 2A of the bump wafer 2 a (the adhesive sheet bonding process), In the process of peeling off the support layer 11 and the adhesive layer 12 of the adhered sheet 1 from the resin layer 13 (the support peeling process), the bumps of the bump wafer 2a with a plurality of bumps 22 are formed. The block forms surface 2A, and the resin layer 13 is formed. In the method of manufacturing a semiconductor device according to this embodiment, next, as shown in FIG. 5C , the resin layer 13 is irradiated with laser LB to remove the resin layer 13 covering the surface of the bumps 22 (resin removal process). And, as shown in FIG. 5D , the bump-attached wafer 2 a is picked up and then fixed to the substrate 4 as the adherend (bonding process). Through a method including a resin removal process and a bonding process, the resin layer 13 is electrically connected to expose the bumps 22 on the surface and the electrodes 42 of the substrate 4 . For the adhesive sheet sticking process, support peeling process, resin removal process and bonding process in this embodiment, the same adhesive sheet sticking process, support peeling process and plasma treatment process as in the first embodiment can be used. The same method as the joining process. According to this embodiment, the same effects as (1) to (7) in the first embodiment can be obtained. [Modifications of Embodiments] The present invention is not limited to the above-described embodiments, and modifications, improvements, etc. within the scope that achieves the object of the present invention are included in the present invention. For example, in the above embodiment, a part of the bumps 22 is removed by laser irradiation simultaneously with the resin layer 13 in the resin removal process, but the present invention is not limited to such a mode. That is, in another aspect of the present invention, in the resin removal process, only the resin layer 13 may be removed by laser irradiation. In the aforementioned embodiment, the resin layer 13 is provided as an adhesive layer for bonding the bump wafer 2 a and the substrate 4 , but the resin layer 13 is not limited to this. That is, in the present invention, the resin layer can be provided according to various purposes. For example, the resin layer 13 may be provided as a lower filling material layer for reinforcing the connection between the bumped chip 2 a and the substrate 4 . In addition, the resin layer 13 may also be provided as a protective layer for protecting the bumped wafer 2 or the bumped wafer 2 a. However, in this case, as the material of the resin layer 13, well-known materials can be used as the material of the lower filler or the protective layer. In the aforementioned embodiment, the resin layer 13 is in contact with both the bumped wafer 2 a and the substrate 4 , but it is not limited to this. For example, when the resin layer 13 is provided as a protective layer to protect the bumped wafer 2 a , the resin layer 13 may be in contact with the bumped wafer 2 a but may not be in contact with the substrate 4 . In the aforementioned embodiment, the bumped wafer 2 is used as the bumped member, but the invention is not limited to this. For example, the bump-attached component may be a package with bumps (for example, BGA (Ball grid array), CSP (Chip size package), etc.). In the aforementioned embodiment, the resin layer 13 is formed on the bump formation surface 2A using the adhesive sheet 1 to cover the bumps 22, but the resin layer 13 is not limited to this. For example, the resin layer 13 may be formed to cover the bumps 22 by applying the resin composition to the bump formation surface 2A and then hardening the resin composition. In the aforementioned embodiment, the adhesive sheet 1 including the support layer 11, the adhesive layer 12 and the resin layer 13 is used, but it is not limited to this. For example, the adhesive sheet 1 includes the support layer 11 and the resin layer 13, and an adhesive sheet without the adhesive layer 12 may be used. In this case, the support layer 11 may be peeled off from the resin layer 13 in the support peeling process. In the resin removal process of the second embodiment, the resin layer 13 may be irradiated with the laser LB while being fixed to a fixing member (for example, an adsorption table, an adhesive sheet, etc.) for fixing the bump wafer 2 a. After removing the resin layer 13, the bump-attached wafer 2a may be picked up from the fixing member and the bonding process may be performed. EXAMPLES Hereinafter, an Example is given and this invention is demonstrated in more detail. The present invention is not limited to these embodiments. [Sheet for protective film formation] A sheet for protective film formation as a resin layer was produced as follows. First, the following components (a), (b), (c), (d), and (e) are mixed at the following mixing ratio (solid content conversion) to obtain a mixture. The mixture was diluted with methyl ethyl ketone to prepare a coating agent for forming a protective film with a solid content concentration of 55% by mass. This protective film-forming thin film coating agent was applied and dried to obtain a protective film-forming sheet with a thickness of 30 μm. (a) Binder polymer (polyvinyl butyral resin) blending ratio: 9.9 mass% (b) Epoxy resin blending ratio: 62.8 mass% (c) Phenol resin blending ratio: 18.1 mass% (d) Hardening acceleration Agent (imidazole compound) Mixing ratio: 0.2 mass% (e) Silica filler mixing ratio: 9 mass% [Production of bumped wafer with protective film attached] Bumped wafer with protective film attached (Bumped chip with protective film attached) is produced as follows. An adhesive tape as a support layer having an adhesive layer and a protective film forming sheet (thickness: 30 μm) as a resin layer were laminated to produce an adhesive sheet. As the attachment tape, E-8510HR (product name) manufactured by LINTEC Co., Ltd. was used. This adhesive sheet is attached to the bump-attached wafer described below as the bump-attached member under the attachment conditions described below.・Laying condition device: Roller type laminating machine (manufactured by LINTEC Co., Ltd., product name: RAD-3510F/12) Temperature: 90°C Pressure: 0.5MPa Speed: 2mm/sec ・With bump wafer bumps Type: spherical bump Bump height: 200μm Bump diameter: 250μm Bump pitch: 600μm After attaching the sheet to the bumped wafer, use RAD-2700 (product name) manufactured by LINTEC Co., Ltd. to self-attach the sheet. The chip side was irradiated with UV, and only the adhesive tape was peeled off to obtain a bumped wafer with a protective film-forming sheet attached. Thereafter, the bumped wafer to which the protective film forming sheet was attached was processed under conditions of 130° C., 0.5 MPa, and 2 hours to obtain a bumped wafer to which the protective film was attached. [Example 1] The protective film (equivalent to the resin layer) on the top of the bump head with the bump chip attached with the protective film was irradiated with laser under the following conditions using the following device.・Conditional device for laser irradiation: Laser marker (manufactured by EO Technics Co., Ltd., product name: EO-CSM CSM 3002 FC) Laser type: YVO _４ Output: 1.27W Frequency: 20000Hz Scanning speed: 200mm/s A scanning electron microscope (SEM) was used to observe the bump surface of the bumped wafer to which the laser-irradiated protective film was attached, and the removability of the protective film was evaluated based on the following criteria. The obtained results are shown in Table 1. A: After removing the protective film covering the top of the bump head, you can confirm that the top of the head is exposed. B: The protective film covering the top of the bump head has not been removed and remains. C: Not only does the protective film cover the top of the bump head, but it also removes the protective film from the part that was originally intended to be protected. D: The position of the bumps on the chip has shifted and fallen off. [Examples 2 and 3] According to the conditions shown in Table 1, the protective film on the top of the bump head was removed in the same manner as in Example 1 except that the conditions for laser irradiation were changed. The bump surface of the bumped wafer to which the laser-irradiated protective film was attached was observed with a scanning electron microscope (SEM), and the removability of the protective film was evaluated based on the same criteria as in Example 1. The obtained results are shown in Table 1. [Comparative Example 1] A bumped wafer with a protective film was obtained in the same manner as Example 1 except that no laser irradiation was applied. The bump surface of the bumped wafer with the protective film attached was observed with a scanning electron microscope (SEM), and the removability of the protective film was evaluated based on the same criteria as in Example 1. The obtained results are shown in Table 1. [Comparative Example 2] A bumped wafer with a protective film was obtained in the same manner as in Example 1, except that laser irradiation was not performed and plasma irradiation was performed under the following conditions. The bump surface of the bumped wafer with the protective film attached after plasma irradiation was observed with a scanning electron microscope (SEM), and the removability of the protective film was evaluated based on the same criteria as in Example 1. The obtained results are shown in Table 1.・Conditions for plasma irradiation Processing gas: SF ₆ Processing gas flow rate: 40cm ³ /min Processing pressure: 100Pa Output: 250W Processing time: 15 minutes Flush: 1 time [Comparative Example 3] Except that no laser irradiation is performed, The bump-attached wafer with the protective film attached was fixed to the jig with double-sided tape, and the protective film covering the bumps was removed by grinding under the following conditions. The process was the same as in Example 1, and the attached chip was obtained. The bump chip is attached to the protective film. The bump surface of the bumped wafer with the polished protective film attached was observed with a scanning electron microscope (SEM), and the removability of the protective film was evaluated based on the same criteria as in Example 1. The obtained results are shown in Table 1.・Grinding and grinding conditions: Refine polisher HV made by REFINETEC Co., Ltd. Polishing paper: #120 (water-resistant polishing paper made by REFINETEC Co., Ltd.) Number of revolutions: 200rpm Weight: 2N For example, according to Embodiments 1 to 3, the protective film on the top of the bump head can be selectively removed to prevent deterioration and damage to the portion of the bumped chip as the bumped member that is originally intended to be protected. Furthermore, as in Examples 1 to 3, the bumps on the wafer did not shift or fall off. Therefore, by using the methods of Embodiments 1 to 3, by removing the resin layer for electrical connection and adding bumps on the surface and electrodes of the substrate, a semiconductor device with excellent connection reliability can be manufactured. Regarding Comparative Example 1, the protective film could not be removed. Regarding Comparative Example 2, the protective film not only covers the top of the bump head, but also removes the protective film from the part that is originally intended to be protected. Regarding Comparative Example 3, the mechanical load through the grinder is applied to the bumps, and the bumps fall off from the wafer.

1: followed by thin slices 2: With bumped wafer 2a: With bumped chip 3: Cutting strip 4:Substrate 11:Support layer 12: Adhesive layer 13:Resin layer 21:Semiconductor wafer 22: Bump 42:Electrode 50:Laser irradiation device 100:Semiconductor device LB:Laser

[Fig. 1] is a schematic cross-sectional view showing an adhesive sheet for forming a resin layer according to the first embodiment of the present invention. [Fig. 2] is a schematic cross-sectional view showing a bumped member (bumped wafer) according to the first embodiment of the present invention. [FIG. 3A] is an explanatory diagram for explaining the manufacturing method of the semiconductor device according to the first embodiment of the present invention. [FIG. 3B] is an explanatory diagram for explaining the manufacturing method of the semiconductor device according to the first embodiment of the present invention. [FIG. 3C] is an explanatory diagram for explaining the manufacturing method of the semiconductor device according to the first embodiment of the present invention. [FIG. 4A] is an explanatory diagram for explaining the manufacturing method of the semiconductor device according to the first embodiment of the present invention. [FIG. 4B] is an explanatory diagram for explaining the manufacturing method of the semiconductor device according to the first embodiment of the present invention. [FIG. 4C] is an explanatory diagram for explaining the manufacturing method of the semiconductor device according to the first embodiment of the present invention. [FIG. 5A] is an explanatory diagram for explaining a method of manufacturing a semiconductor device according to the second embodiment of the present invention. [FIG. 5B] is an explanatory diagram for explaining a method of manufacturing a semiconductor device according to the second embodiment of the present invention. [FIG. 5C] is an explanatory diagram for explaining a method of manufacturing a semiconductor device according to the second embodiment of the present invention. [FIG. 5D] is an explanatory diagram for explaining a method of manufacturing a semiconductor device according to the second embodiment of the present invention.

2: With bumped wafer

2A: Bump forming surface

3: Cutting strip

13:Resin layer

21:Semiconductor wafer

22: Bump

50:Laser irradiation device

LB:Laser

Claims (6)

A manufacturing method of a semiconductor device, characterized by comprising: a process of forming a resin layer on a bump forming surface with a bump member on which a plurality of bumps are formed; and irradiating the resin layer with laser to remove the coating. The process of removing the resin layer on the surface of the bump; the process of removing the resin layer is to remove only the resin layer covering the top of the bump head through the laser, or to remove not only the head covering the bump through the laser The resin layer on the top exposes the top of the head, and the engineer also irradiates the laser to remove the front end portion of the bump. For example, the manufacturing method of a semiconductor device described in claim 1 further includes a process of bonding a dicing tape to a surface opposite to the bump formation surface. For example, the manufacturing method of a semiconductor device described in claim 1 further includes a process of electrically connecting the electrodes of the substrate and the bumps on the surface by removing the resin layer. For example, the manufacturing method of a semiconductor device described in item 1 of the patent application scope, wherein: In the process of removing the resin layer, the heights of the plurality of bumps are adjusted. For example, in the manufacturing method of a semiconductor device described in item 1 of the patent application, the aforementioned laser is a Yb laser, a YVO laser, a YAG laser, or a CO ₂ laser. For example, the manufacturing method of a semiconductor device described in any one of items 1 to 5 of the patent application scope, wherein, as the irradiation conditions of the aforementioned laser, the output is 1W or more and 2W or less, the frequency is 10kHz or more and 100kHz or less, and the scanning speed is Above 50mm/s and below 4000mm/s.

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