TW202025276A

TW202025276A - Semiconductor device manufacturing method

Info

Publication number: TW202025276A
Application number: TW108140901A
Authority: TW
Inventors: 四宮圭亮
Original assignee: 日商琳得科股份有限公司
Priority date: 2018-11-27
Filing date: 2019-11-12
Publication date: 2020-07-01
Also published as: CN113165118A; TWI832923B; CN113165118B; KR20210093915A; WO2020110619A1; JP7402176B2; JPWO2020110619A1

Abstract

Provided is a semiconductor device manufacturing method comprising: a step of forming a resin layer (13) on a bump formation surface (2A) of a bumped member (2) on which a plurality of bumps (22) have been formed; and a step of irradiating the resin layer (13) with a laser (LB) to remove the resin layer (13) covering the surface of the bumps (22).

Description

Manufacturing method of semiconductor device

本發明係有關半導體裝置之製造方法。The present invention relates to a method of manufacturing a semiconductor device.

近年來，伴隨著電子機器之小型化及薄型化，而對於半導體封裝之薄型化及小型化而言之要求亦升高。因此，作為半導體元件之安裝方式，取代於使用金屬導線而連接之以往的打線接合方式，而加以提案有於晶片的電極上形成稱為凸塊之突起電極，藉由凸塊而直接連接基板的電極與晶片之電極之覆晶連接方式的安裝方法。在如此之覆晶連接方式之安裝方法中，因應各種目的，呈被覆附有凸塊之晶圓及附有凸塊之晶片等之凸塊地，加以設置樹脂層。作為如此之樹脂層，係例如，可舉出：為了接著附有凸塊晶片與基板之接著劑層，為了補強附有凸塊晶片與基板之連接的下填充層，為了保護附有凸塊晶圓或附有凸塊晶片之保護層等。但對於樹脂層則被覆凸塊之情況，係必須機械性地排除凸塊上的樹脂層，而確保凸塊與基板之電極的電性連接。因此，在附有凸塊晶片與基板之連接信賴性的點而有著問題。另外，對於經由迴焊處理，而連接附有凸塊晶片與基板之情況，來自凸塊之熔融焊錫則由樹脂層所被覆之故，而有無法得到自動對準效果(即使晶片及基板之電極彼此的位置調整精確度不佳而產生偏差，亦在迴焊時自動地加以補正為正常的位置之現象)之問題。為了解決如此之課題，例如，提案：具備：於加以形成有複數的凸塊的附有凸塊構件之凸塊形成面，形成樹脂層的工程，和對於前述樹脂層施以電漿處理，而除去被覆前述凸塊表面之前述樹脂層之工程之方法(參照文獻1：國際公開第2016/194431號)。另外，為了解決如上述之課題，例如，亦提案有：具備於加以形成有複數的凸塊的附有凸塊構件之凸塊形成面，形成樹脂層的工程，和經由研削而除去被覆前述凸塊表面之前述樹脂層之工程之方法(參照文獻2：日本特開2017-84903號公報)。在記載於文獻1之方法中，不僅欲除去之樹脂層之處所，而對於照射面內全域而言加以照射電漿。即，不僅被覆凸塊頭頂部之樹脂層，而對於被覆本來欲保護之部分的樹脂層，亦加以照射電漿。因此，對於本來欲保護之部分亦帶來電漿照射的影響，而有產生劣化及損傷之虞。另外，記載於文獻2之方法係經由研削而除去樹脂層之方法之故，而切碎機，研磨機，或表面刨機則接觸於被覆凸塊的樹脂層，對於凸塊而言加上有機械性負荷。因此，凸塊的位置產生偏移，以及凸塊產生脫落，而有連接信賴性降低之虞。In recent years, along with the miniaturization and thinning of electronic equipment, the requirements for thinning and miniaturization of semiconductor packages have also increased. Therefore, as a mounting method of semiconductor elements, instead of the conventional wire bonding method that uses metal wires to connect, it is proposed to form bumps called bumps on the electrodes of the chip, and directly connect the substrates by bumps. The mounting method of flip chip connection between electrode and chip electrode. In such a mounting method of flip-chip connection, for various purposes, a resin layer is provided on bump ground covering bumped wafers and bumped wafers. As such a resin layer, for example, there may be mentioned: for bonding the bumped wafer to the adhesive layer of the substrate, for reinforcing the underfill layer connecting the bumped wafer and the substrate, and for protecting the bumped wafer. Round or bumped chip protection layer, etc. However, when the resin layer covers the bumps, the resin layer on the bumps must be removed mechanically to ensure electrical connection between the bumps and the electrodes of the substrate. Therefore, there is a problem in the reliability of the connection between the bumped wafer and the substrate. In addition, in the case of connecting bumped wafers and substrates through reflow processing, the molten solder from the bumps is covered by the resin layer, and the automatic alignment effect cannot be obtained (even if the electrodes of the wafer and the substrate The position adjustment accuracy between each other is not good and the deviation occurs, and it is automatically corrected to the normal position during reflow). In order to solve such a problem, for example, it is proposed to provide a process of forming a resin layer on a bump forming surface with bump members on which plural bumps are formed, and applying plasma treatment to the resin layer, and The process of removing the resin layer covering the surface of the bump (refer to Document 1: International Publication No. 2016/194431). In addition, in order to solve the above-mentioned problems, for example, a process of forming a resin layer on a bump forming surface with a bump member on which plural bumps are formed, and removing the covering of the bumps by grinding has been proposed. The method of engineering the aforementioned resin layer on the surface of the block (refer to Document 2: JP 2017-84903 A). In the method described in Document 1, plasma is irradiated not only on the resin layer to be removed, but also on the entire irradiated surface. That is, not only the resin layer covering the top of the bump head, but also the resin layer covering the part to be protected is also irradiated with plasma. Therefore, the part to be protected is also affected by plasma irradiation, which may cause deterioration and damage. In addition, the method described in Document 2 is a method of removing the resin layer by grinding, while a shredder, grinder, or surface planer is in contact with the resin layer covering the bumps, and the bumps are added with Mechanical load. Therefore, the position of the bump is shifted, and the bump may fall off, which may reduce the reliability of the connection.

因此，本發明之目的係提供：防止附有凸塊構件的本來欲保護之部分的劣化，及損傷，可有效率地製造對於連接信賴性優越之半導體裝置的半導體裝置之製造方法者。有關本發明之一形態的半導體裝置之製造方法，係具備：於加以形成有複數的凸塊的附有凸塊構件之凸塊形成面，形成樹脂層的工程，和對於前述樹脂層照射雷射，而除去被覆前述凸塊表面之前述樹脂層之工程者。如根據此構成，可於附有凸塊構件之凸塊形成面，因應各種目的而設置樹脂層者。作為此樹脂層，係例如，可舉出為了接著附有凸塊晶片與基板之接著劑層，為了補強附有凸塊晶片與基板之連接的下填充層，為了保護附有凸塊晶圓或附有凸塊晶片之保護層等。並且，經由雷射照射之時，可以簡便，有效率地除去被覆凸塊之表面的樹脂層者。雷射照射法係可容易控制照射位置，而樹脂層之中，選擇性地照射雷射於必須除去之處之故，可防止附有凸塊構件之本來欲保護的部分之劣化，及損傷者。另外，如根據雷射照射法，未有如研削法，切碎機，研磨機，或表面刨機則接觸於被覆凸塊的樹脂層之故，可防止凸塊的位置偏移，及脫落者。並且，由電性地連接加以除去被覆凸塊表面之樹脂層，而加以露出表面的凸塊，和基板的電極者，可效率佳地製造對於連接信賴性優越之半導體裝置。在有關本發明之一形態的半導體裝置之製造方法中，更具備：於前述凸塊形成面的相反側的面，貼合切晶帶之工程者為佳。如根據此構成，附有凸塊構件則加以貼著於切晶帶之故，可在雷射照射時抑制凸塊的位置偏移。因此，加以抑制對於被覆凸塊之樹脂層而言之雷射的焦點之位置偏移，可更確實地除去樹脂層。在有關本發明之一形態的半導體裝置之製造方法中，係更具備：電性連接加以除去前述樹脂層，而加以露出表面的前述凸塊，和基板的電極之工程者為佳。如根據此構成，由電性地連接加以除去被覆凸塊表面之樹脂層，而加以露出表面的凸塊，和基板的電極者，可得到於連接信賴性優越之半導體裝置。在有關本發明之一形態的半導體裝置之製造方法中，除去前述樹脂層之工程係為經由前述雷射而除去被覆前述凸塊之頭頂部的前述樹脂層之工程者為佳。如根據此構成，因除去凸塊之頭頂部的樹脂層之故，凸塊頭頂部則露出，更可使基板之電極與凸塊的頭頂部之電性連接的連接信賴性提升者。在有關本發明之一形態的半導體裝置之製造方法中，前述雷射係為Yb雷射、YVO雷射、YAG雷射、或CO₂ 雷射者為佳。如根據此構成，因將Yb雷射、YVO雷射、YAG雷射、或CO₂ 雷射照射於樹脂層之故，可有效率佳地除去樹脂層者。在有關本發明之一形態的半導體裝置之製造方法中，作為前述雷射之照射條件，輸出為1W以上2W以下，頻率為10kHz以上100kHz以下，掃描速度為50mm/s以上4000mm/s以下者為佳。如根據此構成，作為雷射之照射條件的輸出，頻率及掃描速度為特定的範圍內之故，而可有效率地除去樹脂層。Therefore, the object of the present invention is to provide a method of manufacturing a semiconductor device that can efficiently manufacture a semiconductor device with excellent connection reliability by preventing deterioration and damage of the portion to be protected by the bump member. A method of manufacturing a semiconductor device according to one aspect of the present invention includes a process of forming a resin layer on a bump forming surface with bump members on which plural bumps are formed, and irradiating the resin layer with a laser , And remove the engineer who covers the resin layer on the surface of the bump. According to this structure, it is possible to provide a resin layer for various purposes on the bump forming surface with the bump member. The resin layer includes, for example, an adhesive layer for bonding bumped wafers and substrates, an underfill layer for reinforcing the connection between bumped wafers and substrates, and for protecting bumped wafers or Protective layer with bump chip etc. In addition, when irradiated by laser, the resin layer covering the surface of the bump can be removed simply and efficiently. The laser irradiation method can easily control the irradiation position, and in the resin layer, the laser is selectively irradiated to the place that must be removed, which can prevent the deterioration and damage of the part to be protected with the bump member . In addition, according to the laser irradiation method, there is no such thing as a grinding method, a shredder, a grinder, or a surface planer that contacts the resin layer of the coated bump, which prevents the bump from shifting and falling off. In addition, by electrically connecting and removing the resin layer covering the bump surface, and by adding the bumps on the surface and the electrodes of the substrate, a semiconductor device with excellent connection reliability can be manufactured efficiently. In the method of manufacturing a semiconductor device according to one aspect of the present invention, it is preferable to include a process for bonding the dicing tape to the surface on the opposite side of the bump formation surface. According to this structure, the bump member is attached to the dicing tape, so that the position shift of the bump can be suppressed during laser irradiation. Therefore, the positional deviation of the focus of the laser with respect to the resin layer covering the bumps is suppressed, and the resin layer can be removed more reliably. In the method of manufacturing a semiconductor device according to one aspect of the present invention, it is preferable to provide a process for electrically connecting, removing the resin layer, and exposing the bumps on the surface, and the electrodes of the substrate. According to this structure, the resin layer covering the bump surface is removed by electrical connection, and the bump and the electrode of the substrate are exposed, and a semiconductor device with excellent connection reliability can be obtained. In the method of manufacturing a semiconductor device according to one aspect of the present invention, the process of removing the resin layer is preferably a process of removing the resin layer covering the top of the bump through the laser. According to this structure, since the resin layer on the top of the bump is removed, the top of the bump is exposed, and the reliability of the electrical connection between the electrode of the substrate and the top of the bump can be improved. In the method of manufacturing a semiconductor device according to one aspect of the present invention, the aforementioned laser is preferably a Yb laser, YVO laser, YAG laser, or CO ₂ laser. According to this configuration, since Yb laser, YVO laser, YAG laser, or CO ₂ laser is irradiated to the resin layer, the resin layer can be removed efficiently. In the method of manufacturing a semiconductor device according to one aspect of the present invention, as the irradiation conditions of the aforementioned laser, the output is 1W or more and 2W or less, the frequency is 10kHz or more and 100kHz or less, and the scanning speed is 50mm/s or more and 4000mm/s or less. good. According to this configuration, as the output of the laser irradiation conditions, the frequency and scanning speed are within a specific range, and the resin layer can be removed efficiently.

[第一實施形態] 以下，對於本發明將實施形態舉例，依據圖面加以說明。本發明係未加以限定於實施形態的內容。然而，在圖面中，為了容易進行說明，而有擴大或縮小而圖示之部分。首先，對於使用於本實施形態之接著薄片及附有凸塊晶圓加以說明。 (接著薄片) 對於圖1係記載有使用於本實施形態之接著薄片1。使用於本實施形態之接著薄片1係具備：支持體層11，和黏著劑層12，和含有接著劑之樹脂層13。然而，樹脂層13之表面係至加以貼著於晶圓之間，經由剝離薄膜等而加以保護亦可。作為支持體層11係可作為接著薄片之支持體而使用公知的支持體，例如，可使用塑料薄膜等者。如此之支持體層11係在加工被著體之間，支持被著體。作為塑料薄膜係例如，可舉出：聚乙烯薄膜，聚丙烯薄膜，聚丁烯薄膜，聚丁二烯橡膠薄膜，聚甲基戊烯薄膜，聚氯乙烯薄膜，氯乙烯共聚物薄膜，聚對苯二甲酸乙二酯薄膜，聚萘二酸乙二醇酯薄膜，聚對苯二甲酸丁二酯薄膜，聚氨酯薄膜，乙烯醋酸乙烯酯共聚物薄膜，離子聚合物樹脂薄膜，乙烯･(甲基)丙烯酸甲酯共聚物薄膜，乙烯･(甲基)丙烯酸酯共聚物薄膜，聚苯乙烯薄膜，聚碳酸酯薄膜，聚醯亞胺薄膜，及氟樹脂薄膜等。此等薄膜係亦可為單層薄膜，而亦可為層積薄膜。另外，對於層積薄膜之情況，係層積1種的薄膜亦可，而亦可層積2種類上的薄膜。黏著劑層12係作為接著薄片之黏著劑而可使用公知的黏著劑而形成者。經由如此之黏著劑層12，而加工被著體之間係堅固地固定支持體層11與樹脂層13之間，之後，使樹脂層13固著殘存於被著體而自支持體層11剝離者則成為容易。然而，於黏著劑層12，由照射紫外線等之能量線者而使其硬化，作為與樹脂層13之剝離呈成為容易亦可。作為黏著劑層，係例如，可舉出：丙烯酸系黏著劑，橡膠系黏著劑，聚矽氧系黏著劑及胺甲酸乙酯系黏著劑等。樹脂層13係作為接著薄片之黏著劑而可使用公知的黏著劑而形成者。經由含有如此之接著劑之樹脂層13之時，可接著後述之附有凸塊晶片2a與基板4者。作為接著劑係例如，可舉出含有環氧樹脂等之熱硬化性樹脂，和熱硬化劑的接著劑。另外，接著劑係從調整硬化物的熱膨脹係數之觀點，更含有無機充填材亦可。作為無機充填材，係可舉出：二氧化矽，氧化鋁，滑石，碳酸鈣，鈦白，赭色赤鐵礦，碳化矽，及碳化硼等。此等無機充填材係亦可單獨使用，或併用2種以上。 (附有凸塊晶圓) 對於圖2係記載使用於本實施形態之附有凸塊晶圓2(附有凸塊構件)。使用於本實施形態之附有凸塊晶圓2係具備：半導體晶圓21，和凸塊22。然而，凸塊22係加以形成於有半導體晶圓21之電路側。本實施形態之附有凸塊晶圓2係具備：複數的凸塊22。附有凸塊晶圓2係具有：形成有複數的凸塊22之凸塊形成面2A，和未形成有凸塊22之背面2B。作為半導體晶圓21係可使用公知的半導體晶圓者，例如，可使用矽晶圓等。半導體晶圓21之厚度係通常，10μm以上1000μm以下，而理想為50μm以上750μm以下。凸塊22之材料係可使用公知之導電性材料者。作為凸塊22之材料係例如，可舉出：選自銅，銀，金，鋁，及焊錫合金所成的群之任一材料。作為焊錫合金係可使用公知的焊錫材料者，例如，可使用含有錫，銀及銅之無鉛銲錫者。凸塊22之高度係通常，5μm以上1000μm以下，而理想為50μm以上500μm以下。自凸塊22側而視之剖面形狀係並無特別加以限定，但亦可為半圓形，半橢圓形，圓形，長方形或台形等。作為凸塊22的種類係並無特別加以限定，但可舉出焊球凸塊，蕈狀凸塊，柱狀凸塊，椎狀凸塊，圓柱凸塊，點狀凸塊，方體凸塊及等柱狀凸塊等。此等凸塊係亦可單獨使用1種，或併用2種以上。 (半導體裝置之製造方法) 接著，對於有關本實施形態之半導體裝置之製造方法加以說明。圖3A~圖3C及圖4A~圖4C係顯示有關本發明之第一實施形態的半導體裝置之製造方法之說明圖。在有關本實施形態之半導體裝置之製造方法中，首先，於形成有複數的凸塊22之附有凸塊晶圓2之凸塊形成面2A，形成樹脂層13。具體而言，如圖3A，圖3B，及圖3C所示地，經由具備：將接著薄片1之樹脂層13貼合於附有凸塊晶圓2之凸塊形成面2A的工程(接著薄片貼著工程)，和將切晶帶3貼合於附有凸塊晶圓2之背面2B的工程(切晶帶貼著工程)，和將接著薄片1之支持體層11及黏著劑層12，自樹脂層13剝離的工程(支持體剝離工程)之方法之時，於形成有複數的凸塊22之附有凸塊晶圓2之凸塊形成面2A，形成樹脂層13。在有關本實施形態之半導體裝置之製造方法中，接著，如圖4A所示，於被覆凸塊22之表面的樹脂層13照射雷射，除去樹脂層13(樹脂除去工程)。然而，在本實施形態中，與樹脂層13同時除去凸塊22之一部分，但僅除去樹脂層13亦可。並且，如圖4B及圖4C所示，經由具備：經由切割刀而切割附有凸塊晶圓2之工程(切割工程)，和拾取經由切割而個片化之附有凸塊晶片2a，接著固定於作為被著體之基板4之工程(接合工程)之方法，電性連接加以除去樹脂層13，而露出有表面之凸塊22，和基板4之電極42。以下，對於接著薄片貼著工程，切晶帶貼著工程，支持體剝離工程，樹脂除去工程，切割工程，及接合工程，更詳細地加以說明。 (接著薄片貼著工程) 在接著薄片貼著工程中，如圖3A所示，將接著薄片1之樹脂層13，貼合於附有凸塊晶圓2的凸塊之所形成的面(凸塊形成面2A)。接著薄片1之貼著後，凸塊22係經由樹脂層13而加以被覆。在此，作為貼著方法係可採用公知的方法，並無特別加以限定，但經由壓著之方法為佳。壓著係通常，經由壓著滾輪等而按壓接著薄片1同時加以進行。壓著的條件係無特別加以限定，但壓著溫度係40℃以上120℃以下者為佳。滾軸壓力係0.1MPa以上20MPa以下者為佳。壓著速度係1mm/sec以上20mm/sec以下者為佳。另外，接著薄片1之樹脂層13之厚度係作為較凸塊22之高度尺寸為小者為佳，而凸塊22之高度尺寸之0.8倍以下者為更佳，而凸塊22之高度尺寸之0.1倍以上0.7倍以下者則特別理想。樹脂層13之厚度則如為前述上限以下時，可將被覆凸塊22表面之樹脂層13，作為更薄者，而可以後述之樹脂除去工程容易地除去。 (切晶帶貼著工程) 在切晶帶貼著工程中，如圖3B所示，將切晶帶3，貼合於附有凸塊晶圓2之凸塊22之未形成的面(背面2B)。在此，作為貼著方法係可採用公知的方法，並無特別加以限定，但經由壓著之方法為佳。壓著係通常，經由壓著滾輪等而按壓切晶帶3同時而加以進行。壓著條件係無特別加以限定，而可作適宜設定。另外，對於切晶帶3，亦可使用公知的切晶帶。 (支持體剝離工程) 在支持體剝離工程中，如圖3C所示，將接著薄片1之支持體層11及黏著劑層12，自樹脂層13剝離。經由此支持體剝離工程，可得到形成有樹脂層13於凸塊形成面2A之附有凸塊晶圓2者。另外，樹脂層13係成隨著凸塊22之形狀地加以形成者為佳。如作為如此，可減少以後述之樹脂除去工程而除去之樹脂層13，而可提升作業效率。對於黏著劑層12為具有紫外線硬化性的情況，係因應必要而自支持體層11側照射紫外線。經由此，黏著劑層12則硬化，黏著劑層12與樹脂層13之界面的接著力則下降，而成為容易自樹脂層13剝離黏著劑層12。 (樹脂除去工程) 在樹脂除去工程中，係如圖4A所示地，朝向被覆凸塊22之表面的樹脂層13而照射雷射LB，除去樹脂層13。樹脂層13係可因應其目的而除去。例如，如為露出有表面之凸塊22，和基板4之電極42的電性連接為目的時，如作為可電性連接之程度而除去樹脂層13即可。具體而言，從連接信賴性與樹脂層13之機能的確保的平衡觀點，可調整樹脂層13之除去量。隨之，雷射LB係未照射於樹脂層13之全體亦可。如前述，如為凸塊22，和基板4之電極42的電性連接為目的時，如於被覆凸塊22之表面的樹脂層13之一部分(例如，凸塊22之前端部分(頭頂部))，選擇性地照射雷射LB，除去被覆頭頂部之樹脂層13即可。如此，如經由雷射照射而除去被覆凸塊22之頭頂部的樹脂層13時，露出有凸塊22之表面。另外，在樹脂除去工程中，因可選擇性地照射雷射LB於欲除去之樹脂層13的範圍，而於附有凸塊構件的本來欲保護之部分，未照射雷射LB亦可之故，可防止附有凸塊構件的本來欲保護之部分的劣化，及損傷。作為附有凸塊構件的本來欲保護之部分係例如，可舉出：凸塊22之根本部分，凸塊形成面2A，及半導體晶圓21之背面2B。另外，對於經由研削法而除去樹脂層13之情況，係切碎機，研磨機，或表面刨機等則接觸於被覆凸塊22的樹脂層13之故，對於凸塊22加上有機械性負荷，但在本實施形態的樹脂除去工程中，未有加上如此之機械性負荷於凸塊22，而可除去樹脂層13。在樹脂除去工程中係如圖4A所示，呈與凸塊22對向地配置雷射照射裝置50。於欲除去被覆凸塊22之樹脂層13之部分，掃描雷射LB同時，進行照射。如對於一個凸塊22，樹脂層13之除去結束時，移動雷射照射裝置50，對於另外的凸塊22，亦同樣地除去樹脂層13。如此作為，由對於各凸塊22反覆進行樹脂層13之除去者，可選擇性地除去被覆附有凸塊晶圓2所具備之複數的凸塊22之樹脂層13的一部分(例如，被覆凸塊22之頭頂部的樹脂層13)。在本實施形態，在樹脂除去工程中，不僅被覆凸塊22之頭頂部的樹脂層13，而亦對於使其露出之頭頂部，照射雷射LB，如圖4A所示地，除去凸塊22之前端部分。如此，由將凸塊22之一部分(例如，前端部分)，經由雷射LB而除去者，可將複數之凸塊22的高度調整為任意的高度。另外，可將複數之凸塊22的高度作為均一的高度者。更且，加以研削凸塊22之一部分之故，可確實地使凸塊22之表面露出，另外，可加大自樹脂層13露出之凸塊22的表面積。在樹脂除去工程中，使用雷射照射裝置50而照射雷射LB。雷射照射裝置50係如可照射可除去樹脂層13的雷射，未特別加以限定。另外，對於不僅樹脂層13，而亦除去凸塊22之一部分的情況，係如為照射可除去兩者之雷射的雷射照射裝置，未特別加以限定。例如，作為雷射照射裝置50，亦可使用雷射雕刻用之雷射照射裝置。雷射LB係例如，Yb雷射、YVO雷射、YAG雷射、或CO₂ 雷射為佳。雷射之振盪形式係未限定於記載於本說明書之形式。作為雷射LB之照射條件係如為可將樹脂層13(更且因應必要而將凸塊22)除去之條件，未特別加以限定。雷射之輸出係例如為1W以上2W以下者為佳。雷射之頻率係例如為10kHz以上100kHz以下者為佳。雷射的掃描速度係例如為50mm/s以上4000mm/s以下者為佳。然而，在樹脂除去工程中，並非雷射照射面呈成為平滑地除去樹脂層13，而雷射照射面呈具有凹凸地除去樹脂層13者為佳。例如，在樹脂除去工程中，如圖4A所示地，於凸塊22及樹脂層13所成之平面，殘留有凹凸者為佳。如此，如殘留有凹凸時，在後述之接合工程中，對於在將附有凸塊晶片2a連接於基板4之電極42上時，經由該凹凸的凹部而形成間隙於附有凸塊晶片2a與基板4之電極42之間。於此間隙有著凸塊22或樹脂層13移動的空間之故，可籠罩凸塊22同時進行連接。因此，在本實施形態中，與接合凸塊22及樹脂層13所成之平面為平滑之附有凸塊晶片2a的情況作比較，可提高連接信賴性者。 (切割工程) 在切割工程中，如圖4B所示，經由切割刀而切割附有凸塊晶圓2。由如此作為，可將附有凸塊晶圓2個片化為附有凸塊晶片2a。切割裝置係無特別加以限定，而可使用公知的切割裝置者。另外，對於切割條件，亦無特別加以限定。然而，取代使用切割刀之切割法，而使用雷射切割法，及隱形切割法等亦可。 (接合工程) 在接合工程中，如圖4C所示，拾取經由切割而個片化之附有凸塊晶片2a，接著固定於具備基材41與電極42之基板4。附有凸塊晶片2a之凸塊22係加以除去樹脂層13，而露出表面之故，可電性連接凸塊22，和基板4之電極42者。作為基板4係無特別加以限定，但可使用引線架，配線基板，以及形成有電路於表面之矽晶圓及矽晶片等。作為基材41之材質係無特別加以限定，但可舉出陶瓷及塑料等。另外，作為塑料係可舉出環氧，雙馬來酸酐縮亞胺三嗪，及聚醯亞胺等。在接合工程中係亦可因應必要而施以加熱處理，使樹脂層13之接著劑硬化。加熱處理的條件係可因應接著劑之種類等而作適宜設定。在接合工程中係亦可因應必要而施以迴焊處理，使附有凸塊晶片2a的凸塊22熔融，而使附有凸塊晶片2a與基板4焊錫接合。迴焊處理的條件係可因應焊錫之種類等而作適宜設定。由如以上作為，可製造半導體裝置100者。 (第一實施形態之作用效果) 如根據本實施形態，可得到如以下的作用效果者。 (1)經由雷射照射之時，可以簡便，有效率地除去被覆凸塊22之表面的樹脂層13者。另外，自凸塊22之側方而視之剖面形狀則即使為半圓形，半橢圓形，圓形，長方形或台形之情況，亦可除去被覆凸塊22表面之樹脂層13。 (2)如根據雷射照射法，可容易控制雷射LB之照射位置，而樹脂層13之中，可選擇性地照射雷射LB於必須除去之處之故，可防止附有凸塊晶圓2之本來欲保護的部分之劣化，及損傷者。 (3)如根據雷射照射法，如研削法，切碎機，研磨機，或表面刨機則接觸於被覆凸塊22的樹脂層13之故，可防止凸塊22的位置偏移，及凸塊22之脫落者。 (4)由電性地連接加以除去被覆凸塊22表面之樹脂層13，而加以露出表面的凸塊22，和基板4的電極42者，可得到對於連接信賴性優越之半導體裝置100。 (5)更且，經由不僅被覆凸塊22之頭頂部的樹脂層13，而亦對於使其露出之頭頂部，照射雷射LB而除去凸塊22之前端部分之時，亦可以任意的均一高度而將凸塊22之高度作為一致者。如以任意的均一高度而將凸塊22之高度作為一致時，亦可防止經由凸塊22之高度或其不均而產生的連接不良。由如此作為，可得到對於連接信賴性優越之半導體裝置。 (6)在樹脂除去工程中，在將附有凸塊晶圓2貼著於切晶帶3之狀態，加以照射雷射LB於凸塊22之故，可抑制在雷射LB之照射時凸塊22之位置產生偏移者。其結果，加以抑制對於被覆凸塊22之樹脂層13而言之雷射LB的焦點之位置偏移，可更確實地除去樹脂層13。 (7)於凸塊晶片2a之凸塊形成面2A，可設置為了接著附有凸塊晶片2a與基板4之接著劑層(樹脂層13)者。 (8)因設置樹脂層13於附有凸塊晶圓2，除去被覆凸塊22之表面的樹脂層13之後，再個片化為附有凸塊晶片2a之故，可彙整設置樹脂層13於複數之附有凸塊晶片2a者。 [第二實施形態] 以下，依據圖面而加以說明本發明之第二實施形態。然而，本實施形態之接著薄片1及基板4係自與在前述第一實施形態之接著薄片1及基板4各實質上同樣之情況，其詳細說明係省略或簡略化。圖5A，圖5B，圖5C及圖5D係顯示有關第二實施形態的半導體裝置之製造方法之說明圖。在前述第一實施形態中，在形成樹脂層13於附有凸塊晶圓2之後，進行雷射照射而除去樹脂層13，之後，經由切割而個片化為附有凸塊晶片2a。對此，在第二實施形態中，在於預先加以個片化之附有凸塊晶片2a，形成樹脂層13之後，照射雷射LB於樹脂層13。在有關本實施形態之半導體裝置之製造方法中，首先，於形成有複數的凸塊22之附有凸塊晶片2a之凸塊形成面2A，形成樹脂13層。具體而言，如圖5A及圖5B所示地，經由具備：將接著薄片1之樹脂層13貼合於附有凸塊晶片2a之凸塊形成面2A的工程(接著薄片貼著工程)，和將接著薄片1之支持體層11及黏著劑層12，自樹脂層13剝離的工程(支持體剝離工程)之方法之時，於形成有複數的凸塊22之附有凸塊晶片2a之凸塊形成面2A，形成樹脂層13。在有關本實施形態之半導體裝置之製造方法中，接著，如圖5C所示，於樹脂層13照射雷射LB，除去被覆凸塊22表面之樹脂層13(樹脂除去工程)。並且，如圖5D所示，拾取附有凸塊晶片2a，接著固定於為被著體之基板4(接合工程)。經由具備樹脂除去工程與接合工程之方法，電性連接加以除去樹脂層13，露出有表面的凸塊22，和基板4之電極42。對於在本實施形態之接著薄片貼著工程，支持體剝離工程，樹脂除去工程及接合工程，係可採用與在前述第一實施形態之接著薄片貼著工程，支持體剝離工程，電漿處理工程及接合工程同樣的方法。如根據本實施形態，可得到與在前述第一實施形態之作用效果(1)～(7)同樣的作用效果者。 [實施形態之變形] 本發明係未加以限定於前述之實施形態，而在可達成本發明之目的之範圍的變形，改良等係含於本發明。例如，在前述之實施形態中，舉例說明過在樹脂除去工程中，與樹脂層13同時，經由雷射照射而除去凸塊22之一部分的形態，但本發明係未限定於如此之形態。即，在本發明之另外的形態中，在樹脂除去工程中，經由雷射照射而僅除去樹脂層13亦可。在前述的實施形態中，樹脂層13係作為為了接著附有凸塊晶片2a與基板4之接著劑層而加以設置，但並不限定於此。即，在本發明中，可將樹脂層，因應各種目的而設置者。例如，樹脂層13係亦可作為為了補強附有凸塊晶片2a與基板4之連接的下填充材層而加以設置。另外，樹脂層13係亦可作為為了保護附有凸塊晶圓2或附有凸塊晶片2a之保護層而加以設置。然而，如此情況，作為樹脂層13之材料，係作為下填充材或保護層之材料而可使用公知的材料者。在前述的實施形態中，樹脂層13係接觸於附有凸塊晶片2a，及基板4之雙方，但並不限定於此。例如，對於樹脂層13則作為為了保護附有凸塊晶片2a之保護層而加以設置之情況，樹脂層13係如接觸於附有凸塊晶片2a即可，而未接觸於基板4亦可。在前述的實施形態中，作為附有凸塊構件，使用附有凸塊晶圓2，但並不限定於此。例如，附有凸塊構件係為具有凸塊之封裝(例如，BGA(Ball grid array)、CSP(Chip size package)等）亦可。在前述的實施形態，使用接著薄片1而將樹脂層13形成於凸塊形成面2A，而被覆凸塊22，但並不限定於此。例如，經由使樹脂組成物，塗佈於凸塊形成面2A而加以硬化之時，形成樹脂層13，被覆凸塊22亦可。在前述的實施形態中，使用具備支持體層11，黏著劑層12及樹脂層13之接著薄片1，但並不限定於此。例如，接著薄片1係具備支持體層11及樹脂層13，未具備黏著劑層12之接著薄片亦可。此情況，在支持體剝離工程中，如自樹脂層13剝離支持體層11即可。在前述第二實施形態之樹脂除去工程中，在固定於為了固定附有凸塊晶片2a之固定構件(例如，吸附台，黏著薄片等)之狀態，照射雷射LB於樹脂層13亦可。在除去樹脂層13之後，自固定構件拾取附有凸塊晶片2a，而實施接合工程亦可。實施例以下，舉出實施例而更詳細地說明本發明。本發明係對於此等實施例，未有任何限定。 [保護膜形成用薄片] 如以下方式而製作作為樹脂層之保護膜形成用薄片。首先，以下述調配比(固體含量換算)而混合下述(a)、(b)、(c)、(d)、及(e)成分，得到混合物。經由丁酮而稀釋此混合物，調製固體含量濃度為55質量%之保護膜形成薄膜用塗布劑。塗布此保護膜形成薄膜用塗布劑，再進行乾燥，得到厚度為30μm之保護膜形成用薄片。 (a)黏合劑聚合物(聚乙烯醇縮丁醛樹脂) 調配比：9.9質量% (b)環氧樹脂調配比：62.8質量% (c)苯酚樹脂調配比：18.1質量% (d)硬化促進劑(咪唑系化合物) 調配比：0.2質量% (e)二氧化矽填充劑調配比：9質量% [貼附保護膜之附有凸塊晶片的製作] 貼附保護膜之附有凸塊晶片(貼附保護膜之附有凸塊晶片)係如以下而製作。使作為具備黏著劑層之支持體層的貼附膠帶，和作為樹脂層之保護膜形成用薄片(厚度：30μm）層積，而製作接著薄片。作為貼附膠帶，使用LINTEC股份有限公司製之E-8510HR(製品名)。將此接著薄片，以下述之貼附條件，貼附於作為附有凸塊構件之下述附有凸塊晶片。・貼附條件裝置：滾軸式貼合機 (LINTEC股份有限公司製、製品名：RAD-3510F/12) 溫度：90℃ 壓力：0.5MPa 速度：2mm/sec ・附有凸塊晶片凸塊的種類：球形凸塊凸塊高度：200μm 凸塊口徑：250μm 凸塊間距：600μm 貼附接著薄片於附有凸塊晶片之後，使用LINTEC股份有限公司製之RAD-2700(製品名)，自接著薄片側，照射UV，僅剝離貼附膠帶，得到貼附保護膜形成用薄片之附有凸塊晶片。之後，以130℃、0.5MPa、2小時之條件而處理貼附保護膜形成用薄片之附有凸塊晶片，得到貼附保護膜之附有凸塊晶片。 [實施例1] 於貼附保護膜之附有凸塊晶片的凸塊頭頂部，使用以下的裝置，由下記條件而照射雷射，除去凸塊頭頂部的保護膜(相當於樹脂層)。・雷射照射的條件裝置：雷射標示器 (股份有限公司EO Technics製、製品名：EO-CSM CSM 3002 FC) 雷射種類：YVO_４輸出：1.27W 頻率：20000Hz 掃描速度：200mm/s 以掃描型電子顯微鏡(SEM)而觀察貼附雷射照射後之保護膜的附有凸塊晶片的凸塊表面，依照下述基準而評估保護膜之除去性。將所得到之結果，示於表1。 A：加以除去被覆凸塊頭頂部之保護膜，可確認到頭頂部的露出。 B：未除去被覆凸塊頭頂部之保護膜而殘留著。 C：不僅被覆凸塊頭頂部之保護膜，而亦除去本來欲保護之部分的保護膜。 D：晶片上的凸塊之位置產生偏移，以及脫落。 [實施例2及3] 依照表1所示之條件，變更雷射照射之條件以外係與實施例1同樣作為，除去凸塊頭頂部之保護膜。以掃描型電子顯微鏡(SEM)而觀察貼附雷射照射後之保護膜的附有凸塊晶片的凸塊表面，依照與實施例1同樣之基準而評估保護膜之除去性。將所得到之結果，示於表1。 [比較例1] 除未施以雷射照射以外，係實施例1同樣作為，而得到貼附保護膜之附有凸塊晶片。以掃描型電子顯微鏡(SEM)而觀察貼附保護膜的附有凸塊晶片的凸塊表面，依照與實施例1同樣之基準而評估保護膜之除去性。將所得到之結果，示於表1。 [比較例2] 除未施以雷射照射，而由下記條件，進行電漿照射以外，係與實施例1同樣作為，而得到貼附保護膜之附有凸塊晶片。以掃描型電子顯微鏡(SEM)而觀察貼附電漿照射後之保護膜的附有凸塊晶片的凸塊表面，依照與實施例1同樣之基準而評估保護膜之除去性。將所得到之結果，示於表1。・電漿照射之條件處理氣體：SF₆ 處理氣體的流量：40cm³ /min 處理壓力：100Pa 輸出：250W 處理時間：15分鐘沖淨：1次 [比較例3] 除未施以雷射照射，而將貼附保護膜之附有凸塊晶片，由兩面膠帶固定於治具，由下記條件，經由研磨研削而除去被覆凸塊之保護膜以外，係與實施例1同樣作為，而得到貼附保護膜之附有凸塊晶片。以掃描型電子顯微鏡(SEM)而觀察貼附研磨研削後之保護膜的附有凸塊晶片的凸塊表面，依照與實施例1同樣之基準而評估保護膜之除去性。將所得到之結果，示於表1。・研磨研削之條件裝置：REFINETEC股份有限公司製，Refine polisher HV 研磨紙：#120(REFINETEC股份有限公司製耐水研磨紙) 旋轉數：200rpm 加重：2N

如根據實施例1~3，防止作為附有凸塊構件之附有凸塊晶片的本來欲保護之部分的劣化，及損傷，可選擇性地除去凸塊頭頂部之保護膜。更且，如根據實施例1~3，未發生有晶片上之凸塊的位置偏移，及脫落。因此，經由實施例1~3之方法，由電性地連接加以除去樹脂層，而加以露出表面的凸塊，和基板的電極者，可製造對於連接信賴性優越之半導體裝置。有關比較例1係無法除去保護膜。有關比較例2係不僅被覆凸塊頭頂部之保護膜，而亦除去本來欲保護之部分的保護膜。有關比較例3係經由研磨機之機械性負荷則加上於凸塊之故，凸塊則自晶片脫落。[First Embodiment] Hereinafter, an embodiment of the present invention will be exemplified and explained based on the drawings. The present invention is not limited to the content of the embodiment. However, in the drawing, for ease of description, there are parts shown in the figure enlarged or reduced. First, the adhesive sheet and bumped wafer used in this embodiment will be described. (Adhesive sheet) Fig. 1 shows the adhesive sheet 1 used in this embodiment. The adhesive sheet 1 used in this embodiment includes a support layer 11, an adhesive layer 12, and a resin layer 13 containing an adhesive. However, the surface of the resin layer 13 is stuck between the wafers, and may be protected by a release film or the like. As the support layer 11, a known support can be used as a support of the adhesive sheet, for example, a plastic film or the like can be used. In this way, the supporting body layer 11 is tied between the processed body and supports the body. Examples of plastic film systems include: polyethylene film, polypropylene film, polybutene film, polybutadiene rubber film, polymethylpentene film, polyvinyl chloride film, vinyl chloride copolymer film, and polymer Ethylene phthalate film, polyethylene naphthalate film, polybutylene terephthalate film, polyurethane film, ethylene vinyl acetate copolymer film, ionomer resin film, ethylene･(methyl )Methyl acrylate copolymer film, ethylene･(meth)acrylate copolymer film, polystyrene film, polycarbonate film, polyimide film, fluororesin film, etc. These films may be single-layer films or laminated films. In addition, in the case of a laminated film, one type of film may be laminated, or two types of films may be laminated. The adhesive layer 12 is formed by using a known adhesive as an adhesive for bonding the sheet. The adhesive layer 12 is used to process the adhered body to firmly fix the support layer 11 and the resin layer 13, and then the resin layer 13 is fixed and left on the adhered body and peeled off from the support layer 11 Become easy. However, the adhesive layer 12 may be cured by being irradiated with energy rays such as ultraviolet rays, so that the peeling from the resin layer 13 may be easy. Examples of the adhesive layer include acrylic adhesives, rubber adhesives, silicone adhesives, and urethane adhesives. The resin layer 13 is formed by using a well-known adhesive as an adhesive for the adhesive sheet. When passing through the resin layer 13 containing such an adhesive, the bump-attached wafer 2a and the substrate 4 described later can be followed. Examples of the adhesive system include adhesives containing thermosetting resins such as epoxy resins and thermosetting agents. In addition, the adhesive system may further contain an inorganic filler from the viewpoint of adjusting the thermal expansion coefficient of the cured product. Examples of inorganic fillers include silica, alumina, talc, calcium carbonate, titanium dioxide, ochre hematite, silicon carbide, and boron carbide. These inorganic filler systems can also be used alone or in combination of two or more. (Bump-attached wafer) Fig. 2 shows a bump-attached wafer 2 (bump member attached) used in this embodiment. The bump-attached wafer 2 used in this embodiment includes a semiconductor wafer 21 and bumps 22. However, the bump 22 is formed on the circuit side of the semiconductor wafer 21. The bump-attached wafer 2 of this embodiment includes a plurality of bumps 22. The bump-attached wafer 2 has a bump formation surface 2A on which a plurality of bumps 22 are formed, and a back surface 2B on which the bumps 22 are not formed. As the semiconductor wafer 21, a known semiconductor wafer can be used, for example, a silicon wafer or the like can be used. The thickness of the semiconductor wafer 21 is usually 10 μm or more and 1000 μm or less, and preferably 50 μm or more and 750 μm or less. The material of the bump 22 can be a known conductive material. Examples of the material system of the bump 22 include any material selected from the group consisting of copper, silver, gold, aluminum, and solder alloys. As the solder alloy system, a known solder material can be used. For example, a lead-free solder containing tin, silver, and copper can be used. The height of the bump 22 is usually 5 μm or more and 1000 μm or less, and preferably 50 μm or more and 500 μm or less. The cross-sectional shape viewed from the side of the bump 22 is not particularly limited, but it may be semicircular, semi-elliptical, circular, rectangular, or mesa. The type of bump 22 is not particularly limited, but it can include solder ball bumps, mushroom bumps, column bumps, cone bumps, cylindrical bumps, point bumps, and cube bumps. And other columnar bumps. These bump systems may be used alone or in combination of two or more. (Method of Manufacturing Semiconductor Device) Next, a method of manufacturing the semiconductor device of this embodiment will be described. FIGS. 3A to 3C and FIGS. 4A to 4C are explanatory diagrams showing the manufacturing method of the semiconductor device according to the first embodiment of the present invention. In the manufacturing method of the semiconductor device according to this embodiment, first, the resin layer 13 is formed on the bump forming surface 2A of the bump-attached wafer 2 on which the plural bumps 22 are formed. Specifically, as shown in FIG. 3A, FIG. 3B, and FIG. 3C, through a process including: bonding the resin layer 13 of the adhesive sheet 1 to the bump forming surface 2A of the bump-attached wafer 2 (adhesive sheet Bonding process), and bonding the dicing tape 3 to the back side 2B of the bumped wafer 2 (die dicing tape bonding process), and bonding the support layer 11 and the adhesive layer 12 of the sheet 1, In the process of peeling from the resin layer 13 (support peeling process), the resin layer 13 is formed on the bump forming surface 2A of the bump-attached wafer 2 where the plural bumps 22 are formed. In the method of manufacturing the semiconductor device according to this embodiment, next, as shown in FIG. 4A, the resin layer 13 covering the surface of the bump 22 is irradiated with a laser to remove the resin layer 13 (resin removal process). However, in this embodiment, a part of the bump 22 is removed simultaneously with the resin layer 13, but only the resin layer 13 may be removed. And, as shown in FIG. 4B and FIG. 4C, through the process of cutting the bump-attached wafer 2 with a dicing knife (dicing process), and picking up the bump-attached wafer 2a that is individually sliced through dicing, and then The method of the process (bonding process) of fixing to the substrate 4 as the object is to electrically connect to remove the resin layer 13 and expose the bumps 22 on the surface and the electrodes 42 of the substrate 4. Hereinafter, the adhesive sheet pasting process, the dicing tape pasting process, the support peeling process, the resin removing process, the cutting process, and the joining process will be described in more detail. (Next sheet pasting process) In the next sheet pasting process, as shown in FIG. 3A, the resin layer 13 of the adhesive sheet 1 is bonded to the surface (convex) formed by the bumps of the bump-attached wafer 2 Block forming surface 2A). After the sheet 1 is attached, the bump 22 is covered by the resin layer 13. Here, as the bonding method, a known method can be used, and it is not particularly limited, but a method by pressing is preferable. The pressing system is usually performed while pressing the adhesive sheet 1 through pressing rollers or the like. The conditions for pressing are not particularly limited, but the pressing temperature is preferably 40°C or more and 120°C or less. The roller pressure is preferably 0.1MPa or more and 20MPa or less. The pressing speed is preferably 1mm/sec or more and 20mm/sec or less. In addition, the thickness of the resin layer 13 of the adhesive sheet 1 is preferably smaller than the height dimension of the bumps 22, and the height dimension of the bumps 22 is 0.8 times or less, and the height dimension of the bumps 22 is better 0.1 times or more and 0.7 times or less are particularly desirable. When the thickness of the resin layer 13 is less than the aforementioned upper limit, the resin layer 13 covering the surface of the bump 22 can be made thinner and can be easily removed by the resin removal process described later. (Die cutting tape pasting process) In the die cutting tape pasting process, as shown in FIG. 3B, the dicing tape 3 is attached to the unformed surface (back side) of the bump 22 of the bumped wafer 2 2B). Here, as the bonding method, a known method can be used, and it is not particularly limited, but a method by pressing is preferable. The crimping system is usually performed while pressing the dicing tape 3 via a crimping roller or the like. The pressing conditions are not particularly limited, and can be appropriately set. In addition, for the dicing tape 3, a well-known dicing tape may also be used. (Support peeling process) In the support peeling process, as shown in FIG. 3C, the support layer 11 and the adhesive layer 12 of the adhesive sheet 1 are peeled from the resin layer 13. Through this support peeling process, the bump-attached wafer 2 with the resin layer 13 formed on the bump forming surface 2A can be obtained. In addition, the resin layer 13 is preferably formed in accordance with the shape of the bump 22. In this way, the resin layer 13 to be removed by the resin removal process described later can be reduced, and work efficiency can be improved. When the adhesive layer 12 has ultraviolet curability, ultraviolet rays are irradiated from the support layer 11 side as necessary. As a result, the adhesive layer 12 is hardened, the adhesive force of the interface between the adhesive layer 12 and the resin layer 13 is reduced, and the adhesive layer 12 is easily peeled from the resin layer 13. (Resin removal process) In the resin removal process, as shown in FIG. 4A, the laser LB is irradiated toward the resin layer 13 covering the surface of the bump 22, and the resin layer 13 is removed. The resin layer 13 can be removed according to its purpose. For example, if the purpose is to electrically connect the bump 22 with the exposed surface to the electrode 42 of the substrate 4, the resin layer 13 may be removed to the extent that it can be electrically connected. Specifically, the removal amount of the resin layer 13 can be adjusted from the viewpoint of the balance between connection reliability and the function of the resin layer 13. Accordingly, the laser LB system may not be irradiated to the entire resin layer 13. As mentioned above, for the purpose of electrical connection between the bump 22 and the electrode 42 of the substrate 4, for example, a part of the resin layer 13 covering the surface of the bump 22 (for example, the front end portion (top part) of the bump 22) ), selectively irradiate the laser LB to remove the resin layer 13 on the top of the covering head. In this way, when the resin layer 13 covering the top of the bump 22 is removed by laser irradiation, the surface of the bump 22 is exposed. In addition, in the resin removal process, since the laser LB can be selectively irradiated to the area of the resin layer 13 to be removed, the portion of the bump member that is originally intended to be protected may not be irradiated with the laser LB. , It can prevent the deterioration and damage of the part to be protected with the bump member. As the part to be protected with the bump member, for example, the fundamental part of the bump 22, the bump forming surface 2A, and the back surface 2B of the semiconductor wafer 21 can be cited. In addition, when the resin layer 13 is removed by a grinding method, a shredder, grinder, or surface planer is in contact with the resin layer 13 covering the bumps 22, and the bumps 22 are mechanically added. However, in the resin removal process of this embodiment, such a mechanical load is not applied to the bumps 22, and the resin layer 13 can be removed. In the resin removal process, as shown in FIG. 4A, the laser irradiation device 50 is arranged opposite to the bump 22. At the portion of the resin layer 13 to be removed from the covering bump 22, the laser LB is scanned while being irradiated. For example, for one bump 22, when the removal of the resin layer 13 is completed, the laser irradiation device 50 is moved, and for the other bumps 22, the resin layer 13 is also removed in the same manner. In this way, by repeatedly removing the resin layer 13 for each bump 22, it is possible to selectively remove a part of the resin layer 13 covering the plurality of bumps 22 provided in the bump-attached wafer 2 (for example, the covering bump The resin layer 13 on the top of the head of the block 22). In this embodiment, in the resin removal process, not only the resin layer 13 on the top of the bump 22 is covered, but also the exposed top of the head is irradiated with a laser LB. As shown in FIG. 4A, the bump 22 is removed. The front part. In this way, by removing a part of the bump 22 (for example, the tip portion) through the laser LB, the height of the plurality of bumps 22 can be adjusted to any height. In addition, the height of the plurality of bumps 22 may be a uniform height. Furthermore, by grinding a part of the bump 22, the surface of the bump 22 can be reliably exposed, and the surface area of the bump 22 exposed from the resin layer 13 can be increased. In the resin removal process, the laser irradiation device 50 is used to irradiate the laser LB. The laser irradiation device 50 is, for example, a laser capable of irradiating the removable resin layer 13 and is not particularly limited. In addition, the case where not only the resin layer 13 but also a part of the bump 22 is removed is a laser irradiation device that irradiates a laser capable of removing both, and is not particularly limited. For example, as the laser irradiation device 50, a laser irradiation device for laser engraving may also be used. For example, the LB laser is a Yb laser, YVO laser, YAG laser, or CO ₂ laser. The oscillation form of the laser is not limited to the form described in this specification. The irradiation conditions of the laser LB are, for example, the conditions under which the resin layer 13 (and the bumps 22 can be removed as necessary), and are not particularly limited. The output of the laser is preferably 1W or more and 2W or less. The frequency of the laser is preferably above 10 kHz and below 100 kHz. The scanning speed of the laser is preferably 50 mm/s or more and 4000 mm/s or less. However, in the resin removal process, it is not preferable to remove the resin layer 13 smoothly on the laser irradiation surface, but to remove the resin layer 13 with unevenness on the laser irradiation surface. For example, in the resin removal process, as shown in FIG. 4A, it is preferable that unevenness remains on the plane formed by the bump 22 and the resin layer 13. In this way, if unevenness remains, in the bonding process described later, when the bumped wafer 2a is connected to the electrode 42 of the substrate 4, a gap is formed between the bumped wafer 2a and the bumped wafer 2a through the recessed portion of the bump Between the electrodes 42 of the substrate 4. Since there is a space for the bump 22 or the resin layer 13 to move in this gap, the bump 22 can be covered and connected at the same time. Therefore, in this embodiment, compared with the case where the plane formed by the bonding bumps 22 and the resin layer 13 is a smooth bump-attached wafer 2a, the connection reliability can be improved. (Dicing Process) In the dicing process, as shown in FIG. 4B, the bump-attached wafer 2 is cut through a dicing blade. In this way, two bump-attached wafers can be sliced into bump-attached wafers 2a. The cutting device is not particularly limited, and a known cutting device can be used. In addition, the cutting conditions are not particularly limited. However, instead of the cutting method using a cutting knife, a laser cutting method, an invisible cutting method, etc. can also be used. (Joining process) In the joining process, as shown in FIG. 4C, the bump-attached wafer 2a which is sliced by dicing is picked up, and then fixed to the substrate 4 provided with the base material 41 and the electrode 42. Since the bumps 22 of the bumped wafer 2a are removed from the resin layer 13 and the surface is exposed, the bumps 22 and the electrodes 42 of the substrate 4 can be electrically connected. The substrate 4 is not particularly limited, but lead frames, wiring substrates, silicon wafers and silicon wafers with circuits formed on the surface, etc. can be used. The material of the substrate 41 is not particularly limited, but ceramics, plastics, and the like can be cited. In addition, examples of the plastic system include epoxy, bismaleic anhydride iminotriazine, and polyimide. In the joining process, heat treatment may be applied as necessary to harden the adhesive of the resin layer 13. The conditions of the heat treatment can be appropriately set according to the type of adhesive, etc. In the bonding process, a reflow process may be applied as necessary to melt the bumps 22 of the bump-attached wafer 2a, and solder the bump-attached wafer 2a and the substrate 4 to bond. The conditions of the reflow treatment can be appropriately set according to the type of solder, etc. As described above, the semiconductor device 100 can be manufactured. (Functions and effects of the first embodiment) According to this embodiment, the following effects can be obtained. (1) When irradiated by laser, the resin layer 13 covering the surface of the bump 22 can be removed simply and efficiently. In addition, even if the cross-sectional shape viewed from the side of the bump 22 is semicircular, semi-elliptical, circular, rectangular or mesa, the resin layer 13 covering the surface of the bump 22 can be removed. (2) According to the laser irradiation method, the irradiation position of the laser LB can be easily controlled, and in the resin layer 13, the laser LB can be selectively irradiated where it must be removed to prevent bump crystals from being attached. Deterioration and damage of the original part of circle 2 to be protected. (3) If according to the laser irradiation method, such as a grinding method, a shredder, a grinder, or a surface planer, the resin layer 13 covering the bump 22 is contacted, the position of the bump 22 can be prevented from shifting, and The bump 22 falls off. (4) By electrically connecting, removing the resin layer 13 covering the surface of the bump 22, and adding the bump 22 on the exposed surface and the electrode 42 of the substrate 4, a semiconductor device 100 with excellent connection reliability can be obtained. (5) Furthermore, when not only the resin layer 13 covering the top of the bump 22 but also the exposed top of the head is irradiated with the laser LB to remove the front end of the bump 22, it can be uniformly arbitrarily uniform. The height of the bump 22 is regarded as the same. If the height of the bump 22 is set to be uniform with any uniform height, it is also possible to prevent poor connection caused by the height of the bump 22 or its unevenness. In this way, a semiconductor device with excellent connection reliability can be obtained. (6) In the resin removal process, when the bumped wafer 2 is attached to the dicing tape 3, the laser LB is irradiated to the bump 22, which can prevent the bumps from being irradiated by the laser LB. The position of block 22 is offset. As a result, the position shift of the focus of the laser LB with respect to the resin layer 13 covering the bump 22 is suppressed, and the resin layer 13 can be removed more reliably. (7) The bump forming surface 2A of the bump wafer 2a can be provided to adhere to the adhesive layer (resin layer 13) of the bump wafer 2a and the substrate 4. (8) Since the resin layer 13 is placed on the bump-attached wafer 2 and the resin layer 13 covering the surface of the bump 22 is removed, and then the bumped wafer 2a is sliced, the resin layer 13 can be integrated. For the plural bumped wafers 2a. [Second Embodiment] Hereinafter, the second embodiment of the present invention will be described based on the drawings. However, the adhesive sheet 1 and the substrate 4 of the present embodiment are substantially the same as the adhesive sheet 1 and the substrate 4 of the aforementioned first embodiment, and the detailed description thereof is omitted or simplified. 5A, FIG. 5B, FIG. 5C, and FIG. 5D are explanatory diagrams showing the manufacturing method of the semiconductor device of the second embodiment. In the aforementioned first embodiment, after the resin layer 13 is formed on the bump-attached wafer 2, laser irradiation is performed to remove the resin layer 13, and thereafter, the bump-attached wafer 2 a is sliced by dicing. In this regard, in the second embodiment, the bump-attached wafer 2a is sliced in advance to form the resin layer 13, and then the laser LB is irradiated on the resin layer 13. In the manufacturing method of the semiconductor device according to this embodiment, first, the resin 13 layer is formed on the bump forming surface 2A of the bump-attached wafer 2a on which the plural bumps 22 are formed. Specifically, as shown in FIG. 5A and FIG. 5B, through a process of bonding the resin layer 13 of the adhesive sheet 1 to the bump forming surface 2A of the bump-attached wafer 2a (the sheet bonding process), In the process of peeling the support layer 11 and the adhesive layer 12 of the adhesive sheet 1 from the resin layer 13 (support peeling process), the bumps of the bump-attached wafer 2a are formed on the bumps 22 The block forming surface 2A is formed with a resin layer 13. In the manufacturing method of the semiconductor device according to this embodiment, next, as shown in FIG. 5C, the resin layer 13 is irradiated with a laser LB to remove the resin layer 13 covering the surface of the bump 22 (resin removal process). And, as shown in FIG. 5D, the bump-attached wafer 2a is picked up, and then fixed to the substrate 4 as the object (bonding process). The resin layer 13 is electrically connected to remove the resin layer 13 through a method including a resin removal process and a bonding process, and the bumps 22 on the surface and the electrodes 42 of the substrate 4 are exposed. For the adhesive sheet pasting process, support peeling process, resin removal process, and bonding process in this embodiment, the adhesive sheet pasting process, support peeling process, and plasma treatment process of the first embodiment can be used. The same method as the joining process. According to this embodiment, it is possible to obtain the same effects as those of the above-mentioned first embodiment (1) to (7). [Modifications of Embodiments] The present invention is not limited to the foregoing embodiments, and modifications, improvements, etc. within the scope of achieving the object of the invention are included in the present invention. For example, in the foregoing embodiment, an example was described in which a part of the bump 22 was removed by laser irradiation simultaneously with the resin layer 13 in the resin removal process, but the present invention is not limited to such an aspect. That is, in another aspect of the present invention, in the resin removal process, only the resin layer 13 may be removed by laser irradiation. In the aforementioned embodiment, the resin layer 13 is provided as an adhesive layer for bonding the bumped wafer 2a and the substrate 4, but it is not limited to this. That is, in the present invention, the resin layer may be provided for various purposes. For example, the resin layer 13 may also be provided as an underfill material layer for reinforcing the connection between the bump-attached wafer 2a and the substrate 4. In addition, the resin layer 13 may be provided as a protective layer for protecting the bump-attached wafer 2 or the bump-attached wafer 2a. However, in this case, as the material of the resin layer 13, a known material can be used as the material of the underfill material or the protective layer. In the foregoing embodiment, the resin layer 13 is in contact with both the bump-attached wafer 2a and the substrate 4, but it is not limited to this. For example, in the case where the resin layer 13 is provided as a protective layer to protect the bump-attached wafer 2a, the resin layer 13 may be in contact with the bump-attached wafer 2a but not in contact with the substrate 4. In the aforementioned embodiment, the bump-attached wafer 2 is used as the bump-attached member, but it is not limited to this. For example, the bump-attached member may be a package with bumps (for example, BGA (Ball grid array), CSP (Chip size package), etc.). In the foregoing embodiment, the adhesive sheet 1 is used to form the resin layer 13 on the bump formation surface 2A and cover the bump 22, but it is not limited to this. For example, when a resin composition is applied to the bump formation surface 2A and cured, the resin layer 13 may be formed and the bump 22 may be covered. In the aforementioned embodiment, the adhesive sheet 1 including the support layer 11, the adhesive layer 12, and the resin layer 13 is used, but it is not limited to this. For example, the adhesive sheet 1 includes a support layer 11 and a resin layer 13, but an adhesive sheet without the adhesive layer 12 may be used. In this case, in the support peeling process, the support layer 11 may be peeled from the resin layer 13. In the resin removal process of the aforementioned second embodiment, the resin layer 13 may be irradiated with the laser LB in the state of being fixed to a fixing member (for example, a suction table, an adhesive sheet, etc.) for fixing the bump wafer 2a. After the resin layer 13 is removed, the bump-attached wafer 2a is picked up from the fixing member, and the bonding process may be performed. EXAMPLES Hereinafter, the present invention will be explained in more detail with examples. The present invention is not limited to these embodiments. [Sheet for Forming a Protective Film] A sheet for forming a protective film as a resin layer was produced as follows. First, the following components (a), (b), (c), (d), and (e) are mixed at the following mixing ratio (in terms of solid content) to obtain a mixture. This mixture was diluted with methyl ethyl ketone to prepare a coating agent for forming a protective film with a solid content concentration of 55% by mass. This coating agent for forming a protective film was applied and dried to obtain a protective film forming sheet having a thickness of 30 μm. (a) Binder polymer (polyvinyl butyral resin) blending ratio: 9.9 mass% (b) epoxy resin blending ratio: 62.8 mass% (c) phenol resin blending ratio: 18.1 mass% (d) hardening promotion Agent (imidazole compound) Blending ratio: 0.2% by mass (e) Silica filler blending ratio: 9% by mass [Production of bumped wafer with protective film attached] Bumped wafer with protective film attached (The chip with bumps attached to the protective film) is produced as follows. The adhesive tape as a support layer provided with an adhesive layer and a sheet (thickness: 30 μm) for forming a protective film as a resin layer were laminated to produce an adhesive sheet. As the sticking tape, E-8510HR (product name) manufactured by LINTEC Co., Ltd. was used. This adhesive sheet was attached to the following bumped wafer as a bumped member under the following attaching conditions.・Attaching condition device: Roller laminator (manufactured by LINTEC Co., Ltd., product name: RAD-3510F/12) Temperature: 90°C Pressure: 0.5MPa Speed: 2mm/sec ・Bumped wafer bump Type: spherical bump bump height: 200μm bump diameter: 250μm bump pitch: 600μm Attach the adhesive sheet to the bumped wafer, use RAD-2700 (product name) manufactured by LINTEC Co., Ltd., self-adhesive thin On the sheet side, UV was irradiated, and only the adhesive tape was peeled off to obtain a bumped wafer with a protective film forming sheet attached. After that, the bumped wafer with the protective film forming sheet was processed under conditions of 130° C., 0.5 MPa, and 2 hours to obtain a bumped wafer with a protective film. [Example 1] On the top of the bump head with the bump wafer attached with the protective film, the following device was used to irradiate the laser under the following conditions to remove the protective film (corresponding to the resin layer) on the top of the bump.・Laser irradiation condition device: Laser marker (manufactured by EO Technics Co., Ltd., product name: EO-CSM CSM 3002 FC) Laser type: YVO ₄ Output: 1.27W Frequency: 20000 Hz Scanning speed: 200mm/s A scanning electron microscope (SEM) was used to observe the bump surface of the bump-attached wafer on which the protective film irradiated by the laser was attached, and the removability of the protective film was evaluated according to the following criteria. The results obtained are shown in Table 1. A: After removing the protective film covering the top of the bump, it can be confirmed that the top of the head is exposed. B: The protective film covering the top of the bump head is not removed and remains. C: Not only covers the protective film on the top of the bump head, but also removes the protective film that originally intended to be protected. D: The position of the bumps on the wafer is shifted and falls off. [Examples 2 and 3] According to the conditions shown in Table 1, except that the conditions of laser irradiation were changed, the same as Example 1 was performed, except that the protective film on the top of the bump was removed. The bump surface of the bump-attached wafer on which the protective film irradiated by the laser was attached was observed with a scanning electron microscope (SEM), and the removability of the protective film was evaluated according to the same criteria as in Example 1. The results obtained are shown in Table 1. [Comparative Example 1] Except that the laser irradiation was not applied, Example 1 was used in the same manner to obtain a protective film-attached bump-attached wafer. The bump surface of the bump-attached wafer to which the protective film was attached was observed with a scanning electron microscope (SEM), and the removability of the protective film was evaluated according to the same criteria as in Example 1. The results obtained are shown in Table 1. [Comparative Example 2] Except that the laser irradiation was not applied, and plasma irradiation was performed under the following conditions, the same procedure as in Example 1 was performed to obtain a protective film-attached bump-attached wafer. The bump surface of the bump-attached wafer on which the plasma irradiated protective film was attached was observed with a scanning electron microscope (SEM), and the removability of the protective film was evaluated according to the same criteria as in Example 1. The results obtained are shown in Table 1.・Conditions of plasma irradiation Process gas: SF ₆ Process gas flow rate: 40cm ³ /min Process pressure: 100Pa Output: 250W Process time: 15 minutes Rinsing: 1 time [Comparative example 3] Except for laser irradiation, The bumped wafer attached with the protective film was fixed to the jig with double-sided tape, and under the conditions described below, the protective film covering the bumps was removed by grinding and grinding. The same procedure as in Example 1 was performed to obtain the attachment The protective film has bumped chips. The bump surface of the bump-attached wafer to which the polished protective film was attached was observed with a scanning electron microscope (SEM), and the removability of the protective film was evaluated according to the same criteria as in Example 1. The results obtained are shown in Table 1.・Condition device for grinding and grinding: Refine polisher HV made by REFINETEC Co., Ltd. Grinding paper: #120 (Waterproof abrasive paper made by REFINETEC Co., Ltd.) Rotation number: 200rpm Weight: 2N

According to Embodiments 1 to 3, it is possible to prevent deterioration and damage of the portion of the bump-attached chip that is the bump-attached member to be protected, and the protective film on the top of the bump head can be selectively removed. Furthermore, as in Examples 1 to 3, the bumps on the wafer are not shifted in position or fall off. Therefore, by using the methods of Examples 1 to 3, the resin layer is removed by electrical connection, and the bumps on the surface and the electrodes on the substrate are added, and a semiconductor device with excellent connection reliability can be manufactured. Regarding Comparative Example 1, the protective film could not be removed. Regarding Comparative Example 2, not only the protective film covering the top of the bump head, but also the protective film removing the part to be protected. Regarding Comparative Example 3, the mechanical load of the grinder was applied to the bumps, and the bumps fell off the wafer.

1:接著薄片 2:附有凸塊晶圓 2a:附有凸塊晶片 3:切晶帶 4:基板 11:支持體層 12:黏著劑層 13:樹脂層 21:半導體晶圓 22:凸塊 42:電極 50:雷射照射裝置 100:半導體裝置 LB:雷射1: then slice 2: Wafer with bump 2a: Chip with bump 3: Cut crystal strip 4: substrate 11: Support body layer 12: Adhesive layer 13: Resin layer 21: Semiconductor wafer 22: bump 42: Electrode 50: Laser irradiation device 100: Semiconductor device LB: Laser

[圖1] 係顯示為了形成有關本發明之第一實施形態之樹脂層的接著薄片之概略剖面圖。 [圖2] 係顯示有關本發明之第一實施形態之附有凸塊構件(附有凸塊晶圓)之概略剖面圖。 [圖3A] 係為了說明有關本發明之第一實施形態的半導體裝置之製造方法之說明圖。 [圖3B] 係為了說明有關本發明之第一實施形態的半導體裝置之製造方法之說明圖。 [圖3C] 係為了說明有關本發明之第一實施形態的半導體裝置之製造方法之說明圖。 [圖4A] 係為了說明有關本發明之第一實施形態的半導體裝置之製造方法之說明圖。 [圖4B] 係為了說明有關本發明之第一實施形態的半導體裝置之製造方法之說明圖。 [圖4C] 係為了說明有關本發明之第一實施形態的半導體裝置之製造方法之說明圖。 [圖5A] 係為了說明有關本發明之第二實施形態的半導體裝置之製造方法之說明圖。 [圖5B] 係為了說明有關本發明之第二實施形態的半導體裝置之製造方法之說明圖。 [圖5C] 係為了說明有關本發明之第二實施形態的半導體裝置之製造方法之說明圖。 [圖5D] 係為了說明有關本發明之第二實施形態的半導體裝置之製造方法之說明圖。[Fig. 1] A schematic cross-sectional view showing an adhesive sheet for forming the resin layer of the first embodiment of the present invention. [Fig. 2] A schematic cross-sectional view showing a bump-attached member (a bump-attached wafer) related to the first embodiment of the present invention. [FIG. 3A] It is an explanatory diagram for explaining the manufacturing method of the semiconductor device according to the first embodiment of the present invention. [FIG. 3B] It is an explanatory diagram for explaining the manufacturing method of the semiconductor device according to the first embodiment of the present invention. [FIG. 3C] is an explanatory diagram for explaining the manufacturing method of the semiconductor device according to the first embodiment of the present invention. [FIG. 4A] It is an explanatory diagram for explaining the manufacturing method of the semiconductor device according to the first embodiment of the present invention. [Fig. 4B] is an explanatory diagram for explaining the method of manufacturing the semiconductor device according to the first embodiment of the present invention. [FIG. 4C] is an explanatory diagram for explaining the manufacturing method of the semiconductor device according to the first embodiment of the present invention. [FIG. 5A] It is an explanatory diagram for explaining the manufacturing method of the semiconductor device according to the second embodiment of the present invention. [FIG. 5B] It is an explanatory diagram for explaining the manufacturing method of the semiconductor device according to the second embodiment of the present invention. [FIG. 5C] is an explanatory diagram for explaining the manufacturing method of the semiconductor device according to the second embodiment of the present invention. [FIG. 5D] is an explanatory diagram for explaining the manufacturing method of the semiconductor device according to the second embodiment of the present invention.

2:附有凸塊晶圓 2: Wafer with bump

2A:凸塊形成面 2A: Bump forming surface

3:切晶帶 3: Cut crystal strip

13:樹脂層 13: Resin layer

21:半導體晶圓 21: Semiconductor wafer

22:凸塊 22: bump

50:雷射照射裝置 50: Laser irradiation device

LB:雷射 LB: Laser

Claims

A method of manufacturing a semiconductor device, characterized by comprising: a process of forming a resin layer on a bump forming surface with bump members on which plural bumps are formed, And irradiating a laser on the resin layer to remove the resin layer covering the surface of the bump.

Such as the method of manufacturing a semiconductor device described in item 1 of the scope of the patent application, in which: It is also equipped with a process of bonding the dicing tape to the surface on the opposite side of the bump forming surface.

Such as the method of manufacturing a semiconductor device described in item 1 of the scope of the patent application, in which: It also has the process of electrically connecting, removing the resin layer, and exposing the bumps on the surface, and the electrodes of the substrate.

Such as the method of manufacturing a semiconductor device described in item 1 of the scope of the patent application, in which: The process of removing the resin layer is a process of removing the resin layer covering the top part of the bump through the laser.

For example, in the method of manufacturing a semiconductor device described in item 1 of the scope of patent application, the aforementioned laser is a Yb laser, a YVO laser, a YAG laser, or a CO ₂ laser.

For example, the method of manufacturing a semiconductor device described in any one of items 1 to 5 of the scope of patent application, wherein: As the irradiation condition of the aforementioned laser, The output is above 1W and below 2W, The frequency is above 10kHz and below 100kHz, The scanning speed is above 50mm/s and below 4000mm/s.