JP2017103362A - Semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method capable of manufacturing a semiconductor device excellent in connection reliability with high efficiency.SOLUTION: A semiconductor device manufacturing method comprises: a step of forming a resin layer 13 on a bump formation surface of a member with a bump 2 where a plurality of bumps 22 are formed; and a step of performing a hot-air treatment for blowing a high-temperature gas to the resin layer 13 to remove the resin layer 13 which coats surfaces of the bumps 22.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a method for manufacturing a semiconductor device.

In recent years, with the miniaturization and thinning of electronic devices, demands for thinning and miniaturization of semiconductor packages are also increasing. Therefore, as a semiconductor device mounting method, instead of the conventional wire bonding method in which metal wires are used for connection, bump electrodes called bumps are formed on the chip electrodes, and bumps are formed between the substrate electrodes and the chip electrodes. There has been proposed a flip-chip mounting method in which direct connection is made.
In such a flip-chip connection method, a resin layer is provided so as to cover bumps such as a bumped wafer and a bumped chip according to various purposes. Examples of such a resin layer include an adhesive layer for bonding the chip with bump and the substrate, an underfill layer for reinforcing the connection between the chip with bump and the substrate, a wafer with bump, or a chip with bump. Examples include a protective layer for protection.

However, when the resin layer covers the bump, the resin layer on the bump must be mechanically pushed away to ensure electrical connection between the bump and the electrode on the substrate. Therefore, there is a problem in connection reliability between the bumped chip and the substrate. Also, when the bumped chip and the substrate are connected by the reflow process, the molten solder derived from the bump is covered with the resin layer, so the self-alignment effect (the alignment accuracy between the chip and substrate electrodes is Unfortunately, there is a problem that even if a deviation occurs, a phenomenon that is automatically corrected to a normal position at the time of reflow cannot be obtained.
In order to solve the above problems, for example, in the process of grinding the back surface of the wafer with bumps, a thermosetting resin layer in contact with the circuit surface and the flexibility to embed the bumps laminated on this layer There has been proposed a method of using a laminated sheet including a thermoplastic resin layer having an outermost layer and an outermost layer laminated on this layer (see Patent Document 1).

JP 2005-28734 A

  When the laminated sheet described in Patent Document 1 is used, a layer other than the thermosetting resin layer is peeled off after allowing the thermosetting resin layer to penetrate the bumps. Therefore, it has been necessary to make the bump shape of the wafer with bumps into a needle shape or the like. Further, when the bump has a semicircular or trapezoidal cross-sectional shape, a resin layer tends to remain on the bump, which causes a problem in connection reliability.

  Accordingly, an object of the present invention is to provide a semiconductor device manufacturing method capable of efficiently manufacturing a semiconductor device having excellent connection reliability.

A method for manufacturing a semiconductor device according to an aspect of the present invention includes a step of forming a resin layer on a bump forming surface of a bumped member on which a plurality of bumps are formed, and a hot air treatment for blowing a high-temperature gas to the resin layer. And removing the resin layer covering the surface of the bump.
According to this configuration, the resin layer can be provided on the bump forming surface of the bumped member according to various purposes. As this resin layer, for example, an adhesive layer for bonding the bumped chip and the substrate, an underfill layer for reinforcing the connection between the bumped chip and the substrate, a bumped wafer or a bumped chip is protected. For example, a protective layer.
And the resin layer which covers the surface of bump can be removed by performing a hot-air process with respect to this resin layer. Further, in the hot air treatment, the nozzle that blows out the high-temperature gas does not contact the resin layer that covers the surface of the bump. On the other hand, when the resin layer covering the surface of the bump is mechanically removed by grinding means or the like, the member with bump and the grinding means are used because the grinding means comes into contact with the resin layer covering the surface of the bump. It is necessary to control the distance with high accuracy. On the other hand, in the hot air treatment, high accuracy is not required for the distance between the bumped member and the nozzle as compared with the case of mechanical removal. Furthermore, in the hot air treatment, only the resin layer covering the surface of the bump can be easily removed without cutting the bump. Then, the resin layer covering the surface of the bump is removed, and the bump whose exposed surface is electrically connected to the electrode of the substrate, whereby a semiconductor device having excellent connection reliability can be efficiently manufactured.

In the method for manufacturing a semiconductor device according to one aspect of the present invention, it is preferable that the method further includes a step of electrically connecting the bump from which the resin layer is removed and the surface is exposed to the electrode of the substrate.
According to this configuration, the resin layer covering the surface of the bump is removed, and the bump whose surface is exposed is electrically connected to the electrode of the substrate, thereby obtaining a semiconductor device having excellent connection reliability. It is done.

In the method for manufacturing a semiconductor device according to one embodiment of the present invention, the temperature of the gas in the hot air treatment is preferably 80 ° C. or higher and 200 ° C. or lower.
If the gas temperature in the hot air treatment is within the above range as in this configuration, the resin layer covering the bump surface can be efficiently removed.

In the method for manufacturing a semiconductor device according to one embodiment of the present invention, the gas flow rate in the hot air treatment is preferably 50 L / min or more and 175 L / min or less.
As in this configuration, when the gas flow rate in the hot air treatment is within the above range, the resin layer covering the surface of the bump can be efficiently removed.

It is a schematic sectional drawing which shows the lamination sheet for forming the resin layer which concerns on 1st embodiment of this invention. It is a schematic sectional drawing which shows the member with bump (wafer with bump) which concerns on 1st embodiment of this invention. It is explanatory drawing for demonstrating the manufacturing method of the semiconductor device which concerns on 1st embodiment of this invention. It is the schematic which shows the state by which the resin layer was formed in the bump formation surface of the member with bump (wafer with bump) which concerns on 1st embodiment of this invention. It is the schematic which shows the nozzle and the wafer with a bump seen from the upper direction of a bump formation surface in the hot-air processing process which concerns on 1st embodiment of this invention. It is the schematic which shows the nozzle and the wafer with a bump seen from the side of the wafer with a bump in the hot-air treatment process which concerns on 1st embodiment of this invention. It is explanatory drawing for demonstrating the manufacturing method of the semiconductor device which concerns on 2nd embodiment of this invention.

[First embodiment]
Hereinafter, the present invention will be described with reference to the drawings, taking an embodiment as an example. The present invention is not limited to the contents of the embodiment. In the drawings, there are portions enlarged or reduced for easy explanation.
First, the adhesive sheet and the wafer with bumps used in this embodiment will be described.

(Adhesive sheet)
The adhesive sheet 1 used for this embodiment is provided with the support body layer 11, the adhesive layer 12, and the resin layer 13 containing an adhesive agent as shown in FIG. Note that the surface of the resin layer 13 may be protected by a release film or the like until it is attached to the wafer.

As the support layer 11, a known support can be used as a support for the adhesive sheet, and for example, a plastic film or the like can be used. Such a support layer 11 supports the adherend while processing the adherend.
Examples of the plastic film include polyethylene film, polypropylene film, polybutene film, polybutadiene film, polymethylpentene film, polyvinyl chloride film, vinyl chloride copolymer film, polyethylene terephthalate film, polyethylene naphthalate film, polybutylene terephthalate film, Polyurethane film, ethylene vinyl acetate copolymer film, ionomer resin film, ethylene (meth) acrylic acid copolymer film, ethylene (meth) acrylic acid ester copolymer film, polystyrene film, polycarbonate film, polyimide film, and A fluororesin film etc. are mentioned. These films may be single-layer films or laminated films. In the case of a laminated film, one kind of film may be laminated, or two or more kinds of films may be laminated.

The pressure-sensitive adhesive layer 12 can be formed using a known pressure-sensitive adhesive as the pressure-sensitive adhesive for the adhesive sheet. With the pressure-sensitive adhesive layer 12, the support layer 11 and the resin layer 13 are firmly fixed while the adherend is processed, and then the resin layer 13 is fixedly left on the adherend and supported. It becomes easy to peel from the body layer 11. The pressure-sensitive adhesive layer 12 may be cured by irradiating energy rays such as ultraviolet rays so as to be easily separated from the resin layer 13.
Examples of the adhesive include acrylic adhesives, rubber adhesives, silicone adhesives, and urethane adhesives.

The resin layer 13 can be formed using a known adhesive as an adhesive for the adhesive sheet. By using the resin layer 13 containing such an adhesive, the later-described bumped chip 2a and the substrate 4 can be bonded.
Examples of the adhesive include those containing a thermosetting resin such as an epoxy resin and a thermosetting agent. The adhesive may further contain an inorganic filler from the viewpoint of adjusting the thermal expansion coefficient of the cured product. Examples of the inorganic filler include silica, alumina, talc, calcium carbonate, titanium white, bengara, silicon carbide, and boron nitride.

(Wafer with bump)
As shown in FIG. 2, the bumped wafer 2 (bumped member) used in this embodiment includes a semiconductor wafer 21 and bumps 22. The bumps 22 are formed on the circuit side of the semiconductor wafer 21.

As the semiconductor wafer 21, a known semiconductor wafer can be used. For example, a silicon wafer or the like can be used.
The thickness of the semiconductor wafer 21 is usually 10 μm or more and 1000 μm or less, and preferably 50 μm or more and 750 μm or less.

As a material of the bump 22, a known conductive material can be used, for example, solder or the like can be used. As the solder, a known solder material can be used. For example, lead-free solder containing tin, silver and copper can be used.
The height of the bump 22 is usually 5 μm or more and 1000 μm or less, and preferably 50 μm or more and 500 μm or less.
The cross-sectional shape viewed from the side of the bump 22 is not particularly limited, but may be a semicircular shape, a semielliptical shape, a circular shape, a rectangular shape, a trapezoidal shape, or the like.
Although it does not specifically limit as a kind of bump 22, A ball bump, a mushroom bump, a stud bump, a cone bump, a cylinder bump, a dot bump, a cube bump, etc. are mentioned.

(Method for manufacturing semiconductor device)
Next, a method for manufacturing the semiconductor device according to the present embodiment will be described.
FIG. 3 is an explanatory view showing the method of manufacturing the semiconductor device according to the first embodiment.
In the method for manufacturing a semiconductor device according to the present embodiment, first, the resin layer 13 is formed on the bump forming surface 2A of the bumped wafer 2 on which the plurality of bumps 22 are formed. Specifically, as shown in FIGS. 3A to 3C, a step of bonding the resin layer 13 of the adhesive sheet 1 to the bump forming surface 2A of the bumped wafer 2 (adhesive sheet attaching step), and dicing A process of bonding the tape 3 to the back surface of the wafer 2 with bumps (dicing tape bonding process), and a process of peeling the support layer 11 and the adhesive layer 12 of the adhesive sheet 1 from the resin layer 13 (support peeling process). The resin layer 13 is formed on the bump forming surface 2A of the bumped wafer 2 on which the plurality of bumps 22 are formed.
In the method for manufacturing the semiconductor device according to the present embodiment, next, as shown in FIG. 3D, a resin that covers the surface of the bump 22 by performing hot air treatment for blowing a high-temperature gas to the resin layer 13 is applied. The layer 13 is removed (hot air treatment process).
Then, as shown in FIGS. 3E and 3F, a process of dicing the bumped wafer 2 with a dicing blade (dicing process), and the bumped chip 2a separated by dicing are picked up, and an adherend The bumps 22 from which the resin layer 13 is removed and the surface is exposed are electrically connected to the electrodes 42 of the substrate 4 by a method including the step of bonding and fixing to the substrate 4 (bonding step).
Hereinafter, the adhesive sheet attaching step, the dicing tape attaching step, the support peeling step, the hot air treatment step, the dicing step and the bonding step will be described in more detail.

In the adhesive sheet attaching step, as shown in FIG. 3A, the resin layer 13 of the adhesive sheet 1 is attached to the surface on which the bumps 22 of the bumped wafer 2 are formed (bump forming surface 2A).
Here, as a sticking method, a known method can be adopted and is not particularly limited, but a method by pressure bonding is preferable. The crimping is usually performed while pressing with a crimping roll or the like. The conditions for pressure bonding are not particularly limited, but the pressure bonding temperature is preferably 40 ° C. or higher and 120 ° C. or lower. The roll pressure is preferably from 0.1 MPa to 20 MPa. The crimping speed is preferably 1 mm / sec or more and 20 mm / sec or less.
The thickness of the resin layer 13 of the adhesive sheet 1 is preferably smaller than the height dimension of the bump 22, more preferably 0.8 times or less the height dimension of the bump 22, and the height of the bump 22. It is particularly preferable that the size is 0.1 to 0.7 times the size. If the thickness of the resin layer 13 is equal to or less than the above upper limit, the resin layer 13 covering the surface of the bump 22 can be made thinner and can be easily removed in a hot air treatment process described later.

In the dicing tape attaching step, as shown in FIG. 3B, the dicing tape 3 is attached to the surface (back surface 2B) where the bumps 22 of the bumped wafer 2 are not formed.
Here, as a sticking method, a known method can be adopted and is not particularly limited, but a method by pressure bonding is preferable. The crimping is usually performed while pressing with a crimping roll or the like. The conditions for pressure bonding are not particularly limited and can be set as appropriate. Also for the dicing tape 3, a known dicing tape can be used.

In the support peeling process, the support layer 11 and the adhesive layer 12 of the adhesive sheet 1 are peeled from the resin layer 13 as shown in FIG.
In the case where the pressure-sensitive adhesive layer 12 has ultraviolet curing properties, ultraviolet rays are irradiated from the support layer 11 side as necessary. Thereby, the pressure-sensitive adhesive layer 12 is cured, the adhesive force at the interface between the pressure-sensitive adhesive layer 12 and the resin layer 13 is reduced, and the pressure-sensitive adhesive layer 12 is easily peeled from the resin layer 13.

  In the hot air treatment step, as shown in FIG. 3 (D), a hot-air treatment in which a high-temperature gas is blown onto the resin layer 13 to provide the bump-formed wafer 2 with the resin layer 13 formed on the bump formation surface 2A (FIG. 4). The resin layer 13 covering the surface of the bump 22 is removed. Here, the resin layer 13 can be removed according to the purpose. For example, if the electrical connection between the bump 22 whose surface is exposed and the electrode 42 of the substrate 4 is intended, it may be removed to the extent that electrical connection is possible. Specifically, the removal amount of the resin layer 13 can be adjusted from the viewpoint of a balance between connection reliability and ensuring of the function of the resin layer 13.

There is no particular limitation on the hot air treatment apparatus used for the hot air treatment, and an apparatus capable of blowing a high-temperature gas to the object to be processed can be used as appropriate. As such a hot-air treatment apparatus, for example, a table capable of fixing the wafer 2 with bumps, a nozzle 5 (see FIGS. 5 and 6) that can move and blow out high-temperature gas, and a high-temperature gas from the nozzle 5 are used. And a high-temperature gas supply means for supplying to the apparatus.
When such a hot air processing apparatus is used, as shown in FIGS. 5 and 6, the resin layer 13 covering the surface of the bump 22 is removed while the nozzle 5 moves in the direction of the arrow D1. Here, FIG. 5 is a schematic view showing the nozzle 5 and the wafer 2 with bumps as seen from above the bump forming surface 2A. FIG. 6 is a schematic view showing the nozzle 5 and the bumped wafer 2 as seen from the side of the bumped wafer 2.
Further, if the nozzle 5 is moved in the direction orthogonal to the direction of the arrow D1 by, for example, the pitch dimension of the bump 22 and the above operation is repeated, the surface of the bump 22 is spread over the entire bump forming surface 2A. The resin layer 13 covering can be removed.

Although the conditions in a hot air process are not specifically limited, For example, the following conditions are employable.
The gas temperature in the hot air treatment is preferably 80 ° C. or higher and 200 ° C. or lower, more preferably 80 ° C. or higher and 140 ° C. or lower, and particularly preferably 100 ° C. or higher and 120 ° C. or lower. If the temperature of gas is more than the said minimum, a resin layer can be removed efficiently. Further, if the gas temperature is equal to or lower than the above upper limit, the problem that the resin layer is hardened by heat (for example, when the resin layer is an adhesive layer, the adhesive layer is cured in the hot air treatment step). And the problem that the resin layer is hardened and deteriorated by heat).
The gas flow rate in the hot air treatment is preferably 50 L / min or more and 175 L / min or less. When the gas flow rate is equal to or higher than the lower limit, the resin layer can be efficiently removed. Moreover, if the gas flow rate is less than or equal to the above upper limit, the removal amount of the resin layer can be easily controlled.
The gas in the hot air treatment is not particularly limited, and air and nitrogen gas may be used.

The temperature of the table on which the bumped wafer 2 can be fixed is preferably 200 ° C. or less, more preferably from room temperature (for example, 23 ° C.) to 200 ° C., and even more preferably from 30 ° C. to 120 ° C. It is preferably 50 ° C. or higher and 80 ° C. or lower. If the temperature of a table is below the said upper limit, the problem that the resin layer hardens | cures with a heat | fever can be suppressed.
In addition, in order to control the temperature of a table, it is preferable that a hot air processing apparatus is provided with the cooling means for cooling the wafer 2 with a bump. According to this cooling means, it is possible to prevent the wafer 21 and the bump 22 of the bumped wafer 2 from becoming excessively hot due to the hot air treatment. Therefore, according to the hot air processing apparatus provided with this cooling means, the resin layer 13 can be efficiently removed.
This cooling means is preferably provided on a table to which the bumped wafer 2 can be fixed, for example. In addition, this table is preferably made of a material having high thermal conductivity from the viewpoint that the wafer 2 with bumps can be efficiently cooled.

The moving speed of the nozzle 5 in the direction of the arrow D1 is preferably 1 mm / sec or more and 10 mm / sec or less from the viewpoint of efficiently removing the resin layer.
The distance L (see FIG. 6) between the tip of the nozzle 5 and the bumped wafer 2 in which the resin layer 13 is formed on the bump forming surface 2A that is the object to be processed is preferably 1 mm or more and 50 mm or less. When the distance L is equal to or greater than the lower limit, contact between the resin layer and the nozzle can be prevented. Moreover, if the distance L is below the said upper limit, the removal amount of a resin layer can be controlled easily.

In the dicing process, as shown in FIG. 3E, the bumped wafer 2 is diced by a dicing blade. In this way, the bumped wafer 2 can be separated into the bumped chips 2a.
The dicing apparatus is not particularly limited, and a known dicing apparatus can be used. Also, the dicing conditions are not particularly limited. Laser dicing and stealth dicing may be used instead of the dicing blade.

In the bonding step, as shown in FIG. 3F, the bumped chip 2a separated by dicing is picked up and bonded and fixed to the substrate 4 including the base material 41 and the electrode. Since the resin layer 13 is removed and the surface of the bump 22 of the chip with bump 2a is exposed, the bump 22 and the electrode 42 of the substrate 4 can be electrically connected.
Although it does not specifically limit as the board | substrate 4, A lead frame, a wiring board, a silicon wafer with a circuit formed on the surface, a silicon chip, etc. can be used. Although it does not specifically limit as a material of the base material 41, A ceramic, a plastics, etc. are mentioned. Examples of the plastic include epoxy, bismaleimide triazine, and polyimide.

In the bonding step, heat treatment may be performed as necessary to cure the adhesive.
The conditions for the heat treatment can be set as appropriate according to the type of adhesive and the like. In addition, it is preferable that the temperature of heat processing is 80 degreeC or more and 120 degrees C or less from a viewpoint of hardening an adhesive agent by this heat processing, without hardening an adhesive agent in a hot-air processing process.
In the bonding step, if necessary, a reflow process may be performed to melt the bumps 22 of the bumped chip 2a, and the bumped chip 2a and the substrate 4 may be soldered.
The reflow processing conditions can be set as appropriate according to the type of solder and the like.
As described above, the semiconductor device 100 can be manufactured.

(Operational effects of the first embodiment)
According to this embodiment, the following operational effects can be achieved.
(1) By applying hot air treatment to the resin layer 13, the resin layer 13 covering the surface of the bump 22 can be removed. Further, even when the cross-sectional shape viewed from the side of the bump 22 is a semicircular shape, a semi-elliptical shape, a circular shape, a rectangular shape or a trapezoidal shape, the resin layer 13 covering the surface of the bump 22 can be removed.
(2) In the hot air treatment, the nozzle 5 that blows out the high-temperature gas does not contact the resin layer 13 that covers the surface of the bump 22. On the other hand, when the resin layer 13 covering the surface of the bump 22 is mechanically removed by a grinding means or the like, the grinding means comes into contact with the resin layer 13 covering the surface of the bump 22. It is necessary to control the distance between the wafer 2 and the grinding means with high accuracy. On the other hand, in the hot air treatment, a high accuracy is not required for the distance between the bumped wafer 2 and the nozzle 5 as compared with the case of mechanical removal. Furthermore, in the hot air treatment, only the resin layer covering the surface of the bump can be easily removed without cutting the bump.
(3) The resin layer 13 covering the surface of the bump 22 is removed, and the bump 22 whose surface is exposed and the electrode 42 of the substrate 4 are electrically connected to each other by the bump 22 whose surface is exposed. The bumped chip 2a and the electrodes of the substrate 4 can be connected by soldering. In this way, the semiconductor device 100 having excellent connection reliability can be obtained.
(4) An adhesive layer (resin layer 13) for bonding the bumped chip 2a and the substrate 4 can be provided on the bump forming surface 2A of the bumped chip 2a.
(5) Since the resin layer 13 is provided on the wafer 2 with bumps and the hot air treatment is performed, the chips are separated into the chips 2a with bumps. Therefore, the resin layers 13 can be provided collectively on the plurality of chips 2a with bumps.

[Second Embodiment]
Next, a second embodiment of the present invention will be described based on the drawings.
In addition, since the adhesive sheet 1 and the board | substrate 4 of this embodiment are respectively substantially the same as the adhesive sheet 1 and the board | substrate 4 in said 1st embodiment, the detailed description is abbreviate | omitted or simplified.
FIG. 7 is an explanatory diagram showing a method for manufacturing a semiconductor device according to the second embodiment.
In the first embodiment, after the resin layer 13 is formed on the bumped wafer 2, hot air treatment is performed, and then the chips are separated into bumped chips 2 a by dicing. On the other hand, in the second embodiment, the hot air treatment is performed after the resin layer 13 is formed on the chip 2a with bumps separated in advance.

In the manufacturing method of the semiconductor device according to the present embodiment, first, the resin layer 13 is formed on the bump forming surface 2A of the bumped chip 2a on which the plurality of bumps 22 are formed. Specifically, as shown in FIGS. 7A and 7B, a step of bonding the resin layer 13 of the adhesive sheet 1 to the bump forming surface 2A of the bumped chip 2a (adhesive sheet attaching step), and adhesion Bump formation of chip 2a with bumps in which a plurality of bumps 22 are formed by a method comprising a step of peeling the support layer 11 and the adhesive layer 12 of the sheet 1 from the resin layer 13 (support peel step). A resin layer 13 is formed on the surface 2A.
In the method for manufacturing a semiconductor device according to the present embodiment, next, as shown in FIG. 7C, the resin layer 13 is subjected to hot air treatment to remove the resin layer 13 covering the surface of the bump 22. (Hot air treatment process).
Then, as shown in FIG. 3D, the resin layer 13 is removed by a method including a step (bonding step) of picking up the chip 2a with bumps and bonding and fixing it to the substrate 4 as an adherend, The bump 22 whose surface is exposed is electrically connected to the electrode 42 of the substrate 4.

About the adhesive sheet sticking process in this embodiment, a support body peeling process, a hot air treatment process, and a bonding process, it is the same as the adhesive sheet sticking process in the said 1st embodiment, a support body peeling process, a hot air processing process, and a bonding process. The method can be adopted.
According to this embodiment, there can exist an effect similar to the effect (1)-(4) in said 1st embodiment.

[Modification of Embodiment]
The present invention is not limited to the above-described embodiments, and modifications, improvements, and the like within the scope that can achieve the object of the present invention are included in the present invention.
For example, in the above-described embodiment, the resin layer 13 is removed while the nozzle 5 of the hot air processing apparatus moves, but the present invention is not limited to this. For example, the hot air processing apparatus in which the nozzle 5 of the hot air processing apparatus does not move and the table moves instead may be used. Moreover, the hot air processing apparatus in which both the nozzle 5 and the table move may be used.
In the above-described embodiment, the hot air processing apparatus is provided with one nozzle 5, but is not limited thereto. The hot air treatment apparatus may be provided with a plurality of nozzles 5. Thereby, a resin layer can be removed more efficiently.
In the above-described embodiment, the resin layer 13 is provided as an adhesive layer for bonding the bumped chip 2 a and the substrate 4, but is not limited thereto. That is, in the present invention, the resin layer can be provided according to various purposes. For example, the resin layer 13 may be provided as an underfill layer for reinforcing the connection between the bumped chip 2 a and the substrate 4. The resin layer 13 may be provided as a protective layer for protecting the bumped wafer 2 or the bumped chip 2a. In such a case, as the material for the resin layer 13, a known material can be used as the material for the underfill or protective layer.
In the above-described embodiment, the resin layer 13 is in contact with both the bumped chip 2a and the substrate 4, but is not limited thereto. For example, when the resin layer 13 is provided as a protective layer for protecting the bumped chip 2 a, the resin layer 13 may be in contact with the bumped chip 2 a and may not be in contact with the substrate 4.

In the above-described embodiment, the bumped wafer 2 or the bumped chip 2a is used as the bumped member, but the present invention is not limited to this. For example, the bumped member may be a package having a bump (for example, a BGA (Ball Grid Array), a CSP (Chip size package), or the like).
In the above-described embodiment, the resin layer 13 is formed on the bump forming surface 2A using the adhesive sheet 1 and covers the bumps 22. However, the present invention is not limited to this. For example, the resin layer 13 may be formed by applying and curing a resin composition on the bump forming surface 2A and covering the bumps 22.
In the above-described embodiment, the adhesive sheet 1 including the support layer 11, the pressure-sensitive adhesive layer 12, and the resin layer 13 is used, but is not limited thereto. For example, the adhesive sheet 1 may be a laminated sheet including the support layer 11 and the resin layer 13. In this case, what is necessary is just to peel the support body layer 11 from the resin layer 13 in a support body peeling process.

Hereinafter, the present invention will be described in more detail with reference to examples. However, the present invention is not limited to these examples.
[Example 1]
A chip with bumps (chip size: 6 mm × 6 mm, chip thickness: 200 μm, bump type: ball bump, bump height: 200 μm, bump diameter: 250 μm, bump pitch: 400 μm) was prepared. Moreover, the laminated sheet provided with the resin layer which consists of the following resin composition, an adhesive layer (UV hardening type), and a support body layer was prepared.
(Resin composition)
Acrylic polymer: 100 parts by mass Epoxy resin: 30 parts by mass Epoxy resin curing agent: 1 part by mass After the resin layer of the laminated sheet is bonded to the bump forming surface of the chip with bumps, UV irradiation (integrated light amount: 150 mJ / cm ² ), and the pressure-sensitive adhesive layer of the laminated sheet was cured. Thereafter, the support layer and the pressure-sensitive adhesive layer of the laminated sheet were peeled from the resin layer, and heat treatment (treatment temperature: 130 ° C., treatment time: 2 hours) was performed on the resin layer. In this way, a resin layer was formed on the bump forming surface of the bumped chip. And the hot air process was performed to the resin layer of this chip | tip with a bump on the following conditions, the resin layer which has covered the surface of the bump was removed, and the chip | tip with a resin layer formation bump was obtained. When the surface of the bump of the obtained chip with resin layer forming bump was observed with a scanning electron microscope (SEM), the resin layer on the bump was removed.
(Hot air treatment conditions)
Gas type: Air gas temperature: 120 ° C
Gas flow rate: 150 L / min
Table temperature: 80 ° C. or less Moving speed of control nozzle: 5 mm / sec
Distance L between the tip of the nozzle and the object to be processed: 5 mm
The obtained chip with resin layer forming bump was placed on an evaluation substrate, and then placed in a reflow apparatus to melt and join the solder. Then, after this joining, it was evaluated using a tester whether or not conduction was obtained. As a result, it was confirmed that conduction was obtained and the electrode of the chip with the resin layer forming bump and the electrode of the evaluation substrate were soldered.

[Comparative Example 1]
A chip with a resin layer forming bump was obtained in the same manner as in Example 1 except that the hot air treatment step was not performed.
The obtained chip with resin layer forming bump was placed on an evaluation substrate, and then placed in a reflow apparatus to melt and join the solder. Then, after this joining, it was evaluated using a tester whether or not conduction was obtained. As a result, it was confirmed that conduction was not achieved and the electrode of the chip with the resin layer forming bump and the electrode of the evaluation substrate were not solder-bonded.

  As is clear from the comparison results with Example 1 and Comparative Example 1, when the chip with resin layer forming bump obtained in Example 1 was used, the chip with resin layer forming bump and the electrodes of the substrate were connected to each other. It was confirmed that it could be connected by solder joint. Therefore, according to the manufacturing method of the semiconductor device of Example 1, it was confirmed that a semiconductor device excellent in connection reliability can be efficiently manufactured.

  The present invention can be used in a method for manufacturing a semiconductor device.

  DESCRIPTION OF SYMBOLS 13 ... Resin layer, 2 ... Bumped wafer, 22 ... Bump, 2a ... Bumped chip, 4 ... Board | substrate, 42 ... Electrode, 100 ... Semiconductor device.

Claims (4)

Forming a resin layer on the bump forming surface of the bumped member on which a plurality of bumps are formed;
And a step of removing the resin layer covering the surface of the bump by performing a hot air treatment for blowing a high-temperature gas to the resin layer. A method for manufacturing a semiconductor device, comprising: In the manufacturing method of the semiconductor device according to claim 1,
A method of manufacturing a semiconductor device, further comprising a step of electrically connecting the bump from which the resin layer is removed and the surface is exposed to an electrode of a substrate. In the manufacturing method of the semiconductor device according to claim 1 or 2,
The method of manufacturing a semiconductor device, wherein the temperature of the gas in the hot air treatment is 80 ° C. or higher and 200 ° C. or lower. In the manufacturing method of the semiconductor device of any one of Claims 1-3,
The method for manufacturing a semiconductor device, wherein a flow rate of the gas in the hot air treatment is 50 L / min or more and 175 L / min or less.

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