TWI832913B - 光學形貌量測之方法 - Google Patents

光學形貌量測之方法 Download PDF

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TWI832913B
TWI832913B TW108137592A TW108137592A TWI832913B TW I832913 B TWI832913 B TW I832913B TW 108137592 A TW108137592 A TW 108137592A TW 108137592 A TW108137592 A TW 108137592A TW I832913 B TWI832913 B TW I832913B
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highly reflective
reflective coating
wafer
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戴特 穆勒
普萊薩納 迪吉
申筱濛
傑森 齋藤
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美商科磊股份有限公司
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Abstract

一種使用可移除不透明塗層在透明薄膜之上表面進行準確光學形貌量測之方法包含：將一高度反射塗層沈積至一晶圓之一上表面上；量測該高度反射塗層上之形貌；及自該晶圓移除該高度反射塗層。該高度反射塗層包含一有機材料。該高度反射塗層包括介於1與2之間之一折射率值。該高度反射塗層包括大於635奈米之一波長之一複合波長。該高度反射塗層反射至少20%之入射光。該高度反射塗層在被沈積時以40×40微米之一解析度維持一底層圖案形貌。該高度反射塗層未引起對該晶圓之破壞性應力。

Description

光學形貌量測之方法
所描述之實施例大體上係關於光學形貌量測，且更特定言之係關於使用可移除不透明塗層在透明薄膜之上表面進行之經改良光學形貌量測。
在半導體晶圓上之透明薄膜上之光學形貌量測受透明薄膜效應影響，從而影響量測之準確度。用於補償透明薄膜效應之現有技術係基於校正模型，該等校正模型需要關於(若干)薄膜之光學性質及厚度之額外資訊。若關於薄膜性質之此額外資訊係不正確的或不完整的，則校正將為不準確的。雖然校正模型可在具有熟知實際光學薄膜性質之情況下用於實驗或工程分析，但其等對於具有變化實際薄膜性質之大量製造環境中之生產度量而言過於複雜且過於耗時。
在一第一新穎態樣中，一種使用可移除不透明塗層在透明薄膜之上表面進行準確光學形貌量測之方法包含：將一高度反射塗層沈積至一晶圓之一上表面上；量測該高度反射塗層上之形貌；及自該晶圓移除 該高度反射塗層。
在一第二新穎態樣中，該高度反射塗層包含一有機材料。
在一第三新穎態樣中，該高度反射塗層包括介於1與2之間之一折射率值。
在一第四新穎態樣中，該高度反射塗層包括大於635奈米之一波長之一複合波長。
在一第五新穎態樣中，該高度反射塗層反射至少20%之入射光。
在一第六新穎態樣中，該高度反射塗層在被沈積時以至少40×40微米之一解析度維持一底層圖案形貌。
在一第七新穎態樣中，該高度反射塗層未引起對該晶圓之形變應力。
在下文[實施方式]中描述進一步細節及實施例以及技術。本[發明內容]並不意圖定義本發明。本發明係由發明申請專利範圍定義。
100:流程圖
101:步驟
102:步驟
103:步驟
104:步驟
隨附圖式(其中相同元件符號指示相同組件)繪示本發明之實施例。
圖1係繪示來自透明層之間之多個介面之光反射之一圖。
圖2係繪示僅來自上表面高反射率塗層之光反射之一圖。
圖3係繪示一晶圓量測程序之多個步驟之一圖。
圖4係繪示一晶圓高反射率塗佈程序之一圖。
圖5係描述高反射率晶圓塗佈程序之一流程圖100。
相關申請案之交叉參考
本申請案根據35 U.S.C.§119規定主張來自2018年10月19日申請之標題為「REMOVABLE OPAQUE COATING FOR ACCURATE OPTICAL TOPOGRAPHY MEASUREMENTS ON TOP SURFACES OF TRANSPARENT FILMS」之美國臨時申請案第62/748,300號之優先權，該案之標的物以引用的方式併入本文中。
現在將詳細參考本發明之背景實例及一些實施例，在隨附圖式中繪示該等實施例之實例。在下文描述及發明申請專利範圍中，諸如「上」、「下」、「上部」、「下部」、「頂部」、「底部」、「左」及「右」之關係術語可用於描述所描述之一結構之不同部分之間之相對定向，且應瞭解，所描述之整體結構實際上可在三維空間中以任何方式定向。
晶圓形狀及形貌度量係一重要領域且在半導體工業中變得愈來愈重要。許多線上晶圓處理步驟包括對一或多個透明層之使用。晶圓通常製造於一基板之頂部上，該基板亦為至少部分透明的。當使用光學度量來量測一至少部分透明層之特性時，並非全部入射光皆自上表面反射。非自至少部分透明層之上表面反射之光行進穿過該至少部分透明層且接著自其他後續表面反射。來自後續表面之此等反射引起對至少部分透明層之上表面之不準確光學量測。不準確之原因在於無法區分自上表面反射之光與自至少部分透明層之下表面反射之光。因此，至少部分透明層之下表面上之一輪廓可能看似該至少部分透明層之上表面上之一輪廓。
圖1繪示入射光在一至少部分透明層之上表面上之多個反射。圖1中繪示之晶圓包括6個層。層6(n6)係部分透明之一基板。層1至5亦為至少部分透明的。在光學檢測期間，將一入射光引導至層1之上表 面。在此實例中，期望量測層1之上表面之特性。然而，歸因於層1之至少部分透明性，入射光並未由層1完全反射。實情係，入射光之一部分行進穿過層1且自層1與層2之間之表面介面反射。入射光之一部分亦行進穿過層2且自層2與層3之間之表面介面反射。入射光之一部分亦行進穿過層3且自層3與層4之間之表面介面反射。入射光之一部分亦行進穿過層4且自層4與層5之間之表面介面反射。入射光之一部分亦行進穿過層5且自層5與層6之間之表面介面反射。入射光之一部分亦行進穿過層6且自層6之下表面反射。因此，圖1繪示產生入射光自晶圓之多個反射，該等反射並非來自頂部透明層之所要上表面之反射。為改良對透明層之上表面之特性之量測，需要一種新方法。
圖2中繪示一新方法。圖2繪示高反射率塗層，其亦被稱為一「實體層」，其用於改良對透明層上表面之光學量測。將一高度反射塗層沈積於透明層上表面之上表面上。高度反射塗層經沈積使得高度反射塗層具有跨頂部透明層之上表面之一均勻厚度。經沈積高度反射塗層之均勻厚度確保經沈積高度反射塗層之上表面與第一透明層之上表面相匹配。在一項實例中，高度反射塗層材料反射至少20%之入射光。高度反射塗層之增加的反射率提高基於光強度區分自高度反射塗層反射之光與自後續層反射之光的能力。
在一項實例中，高度反射塗層係一有機材料，諸如一類型之光阻劑。
在另一實例中，高度反射塗層具有介於1與2之間之一折射率值。
在另一實例中，高度反射塗層包括大於635奈米之一波長 之一複合波長。
在另一實例中，高度反射塗層反射至少20%之入射光。
在另一實例中，高度反射塗層在被沈積時以40×40微米之一解析度維持一底層圖案形貌。
在另一實例中，高度反射塗層未引起對頂部透明層上表面之破壞性應力。
在另一實例中，高度反射塗層未引起對頂部透明層之破壞性應力。
在另一實例中，高度反射塗層未引起對晶圓之破壞性應力或形變或形貌改變應力。
在另一實例中，高度反射塗層不包括金屬。
在另一實例中，高度反射塗層係不透明的。
圖3繪示使用一高度反射塗層量測一透明層之上表面特性之步驟。在步驟1中，一晶圓之頂部透明層之上表面未被塗佈。在步驟2中，以一高度反射塗層塗佈晶圓之頂部透明層之上表面。在一項實例中，塗層係一有機、非金屬材料。在另一實例中，塗層係一金屬層。塗層防止來自透明薄膜之底部或薄膜堆疊之內部介面之反射。因此，僅自上表面反射之光被用於量測晶圓上表面形貌。本文中應注意，使用有機材料用於塗層係有利的，此係因為有機薄膜之沈積未使薄膜應力增大至應力誘發晶圓彎曲之位準。
在步驟3中，量測以高度反射塗層塗佈之晶圓之上表面之形貌。在存在透明薄膜之情況下，在塗佈晶圓之後量測上表面形貌提供一更準確的光學形貌量測，此係因為避免透明薄膜效應(諸如反射相之扭曲 或反射光強度變動之損失)。
在步驟4中，移除高度反射塗層。可使用各種方法移除高度反射塗層。在一項實例中，使用一溶劑移除高度反射塗層。溶劑包含但不限於丙二醇甲醚、乳酸乙酯、氫氧化四甲銨。
圖4繪示用於將高度反射塗層沈積至晶圓之上表面之一方法。使晶圓與一真空吸盤接觸。將高度反射材料之一施配器定位於晶圓上方。接著，旋轉晶圓，同時施配器將高度反射材料施配至晶圓之上表面上。在藉由真空吸盤旋轉晶圓時，使施配器移動以將高度反射材料沈積於晶圓之中心處或晶圓之外邊緣處以及其等間之全部位置處。
圖5係描述可移除不透明塗層在透明薄膜之上表面進行準確光學形貌量測之步驟之一流程圖。在步驟101中，將一高度反射塗層沈積至晶圓之上表面上。在步驟102中，對高度反射塗層進行上表面形貌量測。在一項實例中，使用一基於光學干涉之全晶圓晶圓幾何度量平台來執行表面形貌量測，該平台可量測晶圓形狀、晶圓平坦度、雙側奈米形貌及高解析度塌邊(edge roll-off)。
在步驟103中，一旦完成上表面形貌量測，便可在不損壞晶圓之情況下自晶圓移除高度反射塗層。在一項實例中，使用溶劑移除反射塗層，該等溶劑諸如丙二醇甲醚、乳酸乙酯、氫氧化四甲銨。在步驟104中，晶圓經進一步處理用於最終用途。
使用可移除不透明塗層在透明薄膜之上表面進行準確光學形貌量測之此方法容許：
- 對上表面形貌進行準確量測
- 防止在經由與晶圓實體接觸而量測形貌時對晶圓之上表 面的實體損壞。
- 藉由使用光學量測之較快速量測時間。
- 藉由溶劑洗滌快速移除高反射率塗層。
儘管上文描述某些特定實施例用於指導目的，然本專利文件之教示具有一般適用性且不限於上文描述之特定實施例。因此，可在不脫離如在發明申請專利範圍中所闡述之本發明之範疇之情況下實踐所描述實施例之各種特徵之各種修改、調適及組合。

Claims (19)

  1. 一種光學形貌量測之方法，其包括：將一高度反射塗層沈積至一晶圓上；量測該高度反射塗層上之形貌；及自該晶圓移除該高度反射塗層，其中該高度反射塗層包括介於1與2之間之一折射率值。
  2. 如請求項1之方法，其中該高度反射塗層包括有機材料。
  3. 如請求項1之方法，其中該高度反射塗層包括大於635奈米之一波長之一複合波長。
  4. 如請求項1之方法，其中該高度反射塗層反射至少20%之入射光。
  5. 如請求項1之方法，其中該高度反射塗層在被沈積時以40×40微米之一解析度維持一底層圖案形貌。
  6. 如請求項1之方法，其中該高度反射塗層未引起對該晶圓之破壞性應力。
  7. 如請求項1之方法，其中該高度反射塗層不包括金屬材料。
  8. 如請求項1之方法，其中該高度反射塗層係不透明的。
  9. 如請求項1之方法，其中該晶圓包括一透明材料層。
  10. 如請求項1之方法，其中藉由一旋轉塗佈機執行該高度反射塗層之該沈積。
  11. 如請求項1之方法，其中使用一光學干涉術執行該量測形貌。
  12. 如請求項1之方法，其中量測晶圓形狀。
  13. 如請求項1之方法，其中量測晶圓平坦度。
  14. 如請求項1之方法，其中量測雙側奈米形貌。
  15. 如請求項1之方法，其中量測高解析度塌邊。
  16. 如請求項1之方法，其中使用一溶劑執行該高度反射塗層之該移除。
  17. 如請求項16之方法，其中該溶劑係丙二醇甲醚。
  18. 如請求項16之方法，其中該溶劑係乳酸乙酯。
  19. 如請求項16之方法，其中該溶劑係氫氧化四甲銨。
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