CN112840442A - 用于在透明薄膜的上表面进行准确光学形貌测量的可移除不透明涂层 - Google Patents

用于在透明薄膜的上表面进行准确光学形貌测量的可移除不透明涂层 Download PDF

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CN112840442A
CN112840442A CN201980065105.6A CN201980065105A CN112840442A CN 112840442 A CN112840442 A CN 112840442A CN 201980065105 A CN201980065105 A CN 201980065105A CN 112840442 A CN112840442 A CN 112840442A
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highly reflective
reflective coating
wafer
topography
coating
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D·米勒
P·迪贺
申筱蒙
J·斋藤
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KLA Corp
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Abstract

一种使用可移除不透明涂层以在透明薄膜的上表面进行准确光学形貌测量的方法包含：将高度反射涂层沉积到晶片的上表面上；测量所述高度反射涂层上的形貌；及从所述晶片移除所述高度反射涂层。所述高度反射涂层包含有机材料。所述高度反射涂层包括介于1与2之间的折射率值。所述高度反射涂层包括大于635纳米的波长的复合波长。所述高度反射涂层反射至少20％的入射光。所述高度反射涂层在被沉积时以40×40微米的分辨率维持底层图案形貌。所述高度反射涂层未引起对所述晶片的破坏性应力。

Description

用于在透明薄膜的上表面进行准确光学形貌测量的可移除不 透明涂层
相关申请案的交叉参考
本申请案根据35U.S.C.§119规定主张2018年10月19日申请的标题为“用于在透明薄膜的上表面进行准确光学形貌测量的可移除不透明涂层(REMOVABLE OPAQUE COATINGFOR ACCURATE OPTICAL TOPOGRAPHY MEASUREMENTS ON TOP SURFACES OF TRANSPARENTFILMS)”的第62/748,300号美国临时申请案的优先权，所述申请案的标的物以引用的方式并入本文中。
技术领域
所描述实施例大体上涉及光学形貌测量，且更特定来说，涉及使用可移除不透明涂层在透明薄膜的上表面进行的改进式光学形貌测量。
背景技术
半导体晶片上的透明薄膜上的光学形貌测量受透明薄膜效应影响，从而影响测量的准确度。用于补偿透明薄膜效应的现有技术是基于校正模型，所述校正模型需要关于(若干)薄膜的光学性质及厚度的额外信息。如果关于薄膜性质的这个额外信息是不正确的或不完整的，那么校正将为不准确的。虽然校正模型可在具有众所周知的实际光学薄膜性质的情况下用于实验或工程分析，但其对于具有变化实际薄膜性质的大量制造环境中的生产计量来说过于复杂且过于耗时。
发明内容
在第一新颖方面中，一种使用可移除不透明涂层以在透明薄膜的上表面进行准确光学形貌测量的方法包含：将高度反射涂层沉积到晶片的上表面上；测量所述高度反射涂层上的形貌；及从所述晶片移除所述高度反射涂层。
在第二新颖方面中，所述高度反射涂层包含有机材料。
在第三新颖方面中，所述高度反射涂层包括介于1与2之间的折射率值。
在第四新颖方面中，所述高度反射涂层包括大于635纳米的波长的复合波长。
在第五新颖方面中，所述高度反射涂层反射至少20％的入射光。
在第六新颖方面中，所述高度反射涂层在被沉积时以至少40×40微米的分辨率维持底层图案形貌。
在第七新颖方面中，所述高度反射涂层未引起对所述晶片的形状改变应力。
在下文具体实施方式中描述进一步细节及实施例以及技术。本发明内容并不意在界定本发明。本发明是由权利要求书定义。
附图说明
附图(其中类似数字指示类似组件)说明本发明的实施例。
图1是说明来自透明层之间的多个界面的光反射的图。
图2是说明仅来自上表面高反射率涂层的光反射的图。
图3是说明晶片测量过程的多个步骤的图。
图4是说明晶片高反射率涂覆过程的图。
图5是描述高反射率晶片涂覆过程的流程图100。
具体实施方式
现在将详细参考本发明的背景实例及一些实施例，在附图中说明所述实施例的实例。在下文描述及权利要求书中，例如“上”、“下”、“上部”、“下部”、“顶部”、“底部”、“左”及“右”的关系术语可用于描述所描述结构的不同部分之间的相对定向，且应了解，所描述整体结构实际上可在三维空间中以任何方式定向。
晶片形状及形貌计量是一个重要的领域且在半导体工业中变得越来越重要。许多在线晶片处理步骤包括使用一或多个透明层。晶片通常制造在衬底的顶部上，所述衬底也为至少部分透明的。当使用光学计量来测量至少部分透明层的特性时，并非全部入射光均从上表面反射。未从至少部分透明层的上表面反射的光行进穿过所述至少部分透明层且接着从其它后续表面反射。来自后续表面的这些反射引起对至少部分透明层的上表面的不准确光学测量。不准确的原因在于无法区分从所述上表面反射的光与从至少部分透明层的下表面反射的光。因此，至少部分透明层的下表面上的轮廓可能看起来像所述至少部分透明层的上表面上的轮廓。
图1说明入射光在至少部分透明层的上表面上的多个反射。图1中说明的晶片包括6个层。层6(n6)是部分透明的衬底。层1到5也为至少部分透明的。在光学检验期间，将入射光引导到层1的上表面。在这个实例中，期望测量层1的上表面的特性。然而，由于层1的至少部分透明性，入射光并未由层1完全反射。而是，入射光的一部分行进穿过层1且从层1与层2之间的表面界面反射。入射光的一部分也行进穿过2且从层2与层3之间的表面界面反射。入射光的一部分也行进穿过层3且从层3与层4之间的表面界面反射。入射光的一部分也行进穿过层4且从层4与层5之间的表面界面反射。入射的一部分也行进穿过层5且从层5与层6之间的表面界面反射。入射光的一部分也行进穿过层6且从层6的下表面反射。因此，图1说明产生入射光从晶片的多个反射，所述反射并非来自顶部透明层的所要上表面的反射。为了改进对透明层的上表面的特性的测量，需要一种新方法。
图2中说明新方法。图2说明高反射率涂层，其也被称为“物理层”，其用于改进对透明层上表面的光学测量。将高度反射涂层沉积在透明层上表面的上表面上。高度反射涂层经沉积使得高度反射涂层具有跨顶部透明层的上表面的均匀厚度。经沉积高度反射涂层的均匀厚度确保经沉积高度反射涂层的上表面与第一透明层的上表面相匹配。在一个实例中，高度反射涂层材料反射至少20％的入射光。高度反射涂层的增加的反射率提高基于光强度区分从高度反射涂层反射的光与从后续层反射的光的能力。
在一个实例中，高度反射涂层是有机材料，例如一种类型的光致抗蚀剂。
在另一实例中，高度反射涂层具有介于1与2之间的折射率值。
在另一实例中，高度反射涂层包括大于635纳米的波长的复合波长。
在另一实例中，高度反射涂层反射至少20％的入射光。
在另一实例中，高度反射涂层在被沉积时以40×40微米的分辨率维持底层图案形貌。
在另一实例中，高度反射涂层未引起对顶部透明层上表面的破坏性应力。
在另一实例中，高度反射涂层未引起对顶部透明层的破坏性应力。
在另一实例中，高度反射涂层未引起对晶片的破坏性应力或形状或形貌改变应力。
在另一实例中，高度反射涂层不包括金属。
在另一实例中，高度反射涂层是不透明的。
图3说明用于使用高度反射涂层测量透明层的上表面特性的步骤。在步骤1中，未涂覆晶片的顶部透明层的上表面。在步骤2中，以高度反射涂层涂覆晶片的顶部透明层的上表面。在一个实例中，涂层是有机、非金属材料。在另一实例中，涂层是金属层。涂层防止来自透明薄膜的底部或薄膜堆叠的内部界面的反射。因此，使用仅从上表面反射的光以测量晶片上表面形貌。本文中应注意，使用有机材料进行涂覆是有利的，这是因为有机薄膜的沉积未使薄膜应力增大到应力诱发晶片弯曲的水平。
在步骤3中，测量以高度反射涂层涂覆的晶片的上表面的形貌。在存在透明薄膜的情况下，在涂覆晶片之后测量上表面形貌提供更准确的光学形貌测量，这是因为避免透明薄膜效应，例如反射相的扭曲或反射光强度变动的损失。
在步骤4中，移除高度反射涂层。可使用各种方法移除高度反射涂层。在一个实例中，使用溶剂移除高度反射涂层。溶剂包含但不限于丙二醇甲醚、乳酸乙酯、氢氧化四甲铵。
图4说明用于将高度反射涂层沉积到晶片的上表面的方法。使晶片与真空吸盘接触。将高度反射材料的施配器定位在晶片上方。接着，旋转晶片，同时施配器将高度反射材料施配到晶片的上表面上。在通过真空吸盘旋转晶片时，使施配器移动以将高度反射材料沉积在晶片的中心处或晶片的外边缘处以及其间的全部位置处。
图5是描述用于可移除不透明涂层在透明薄膜的上表面进行准确光学形貌测量的步骤的流程图。在步骤101中，将高度反射涂层安置到晶片的上表面上。在步骤102中，对高度反射涂层进行上表面形貌测量。在一个实例中，使用基于光学干涉的全晶片几何计量平台来执行表面形貌测量，所述平台可测量晶片形状、晶片平坦度、双侧纳米形貌及高分辨率塌边(edge roll-off)。
在步骤103中，一旦完成上表面形貌测量，便可在不损坏晶片的情况下从晶片移除高度反射涂层。在一个实例中，使用溶剂移除反射涂层，例如丙二醇甲醚、乳酸乙酯、氢氧化四甲铵。在步骤104中，进一步处理晶片以供最终使用。
使用可移除不透明涂层以在透明薄膜的上表面进行准确光学形貌测量的这种方法容许：
-对上表面形貌进行准确测量
-防止在通过与晶片物理接触而测量形貌时对晶片的上表面的物理损坏。
-通过使用光学测量的较快速测量时间。
-通过溶剂洗涤快速移除高反射率涂层。
尽管上文出于指导目的描述某些特定实施例，但本专利文件的教示具有一般适用性且不限于上文所描述的特定实施例。因此，可在不脱离如在权利要求书中所阐述的本发明的范围的情况下实践所描述实施例的各种特征的各种修改、调适及组合。

Claims (20)

1.一种方法，其包括：
将高度反射涂层沉积到晶片上；
测量所述高度反射涂层上的形貌；及
从所述晶片移除所述高度反射涂层。
2.根据权利要求1所述的方法，其中所述高度反射涂层包括有机材料。
3.根据权利要求1所述的方法，其中所述高度反射涂层包括介于1与2之间的折射率值。
4.根据权利要求1所述的方法，其中所述高度反射涂层包括大于635纳米的波长的复合波长。
5.根据权利要求1所述的方法，其中所述高度反射涂层反射至少20％的入射光。
6.根据权利要求1所述的方法，其中所述高度反射涂层在被沉积时以40×40微米的分辨率维持底层图案形貌。
7.根据权利要求1所述的方法，其中所述高度反射涂层未引起对所述晶片的破坏性应力。
8.根据权利要求1所述的方法，其中所述高度反射涂层不包括金属材料。
9.根据权利要求1所述的方法，其中所述高度反射涂层是不透明的。
10.根据权利要求1所述的方法，其中所述晶片包括透明材料层。
11.根据权利要求1所述的方法，其中通过旋转涂覆机执行所述高度反射涂层的所述沉积。
12.根据权利要求1所述的方法，其中使用光学干涉术执行所述测量形貌。
13.根据权利要求1所述的方法，其中测量晶片形状。
14.根据权利要求1所述的方法，其中测量晶片平坦度。
15.根据权利要求1所述的方法，其中测量双侧纳米形貌。
16.根据权利要求1所述的方法，其中测量高分辨率塌边。
17.根据权利要求1所述的方法，其中使用溶剂执行所述高度反射涂层的所述移除。
18.根据权利要求17所述的方法，其中所述溶剂是丙二醇甲醚。
19.根据权利要求17所述的方法，其中所述溶剂是乳酸乙酯。
20.根据权利要求17所述的方法，其中所述溶剂是氢氧化四甲铵。
CN201980065105.6A 2018-10-19 2019-10-18 用于在透明薄膜的上表面进行准确光学形貌测量的可移除不透明涂层 Pending CN112840442A (zh)

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