TWI828003B - 電子封裝件及其製法 - Google Patents
電子封裝件及其製法 Download PDFInfo
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Abstract
一種電子封裝件,係於承載結構上配置一電子模組及一結合於該電子模組上之散熱結構,並將至少一調整結構結合於該散熱結構上並位於該電子模組之周圍,以藉由該調整結構分散熱應力而避免該電子模組發生翹曲。
Description
本發明係有關一種半導體裝置,尤指一種電子封裝件及其製法。
隨著近年來可攜式電子產品的蓬勃發展,各類相關產品逐漸朝向高密度、高性能以及輕、薄、短、小之趨勢發展,其中,應用於該可攜式電子產品之各態樣的半導體封裝結構也因而配合推陳出新,以期能符合輕薄短小與高密度的要求。
圖1係習知半導體封裝件1之剖面示意圖。如圖1所示,該半導體封裝件1係於一封裝基板19上以覆晶方式設置至少一電子模組1a,並於該封裝基板19上設置遮蓋該電子模組1a之散熱件17。
惟,習知半導體封裝件1中,由於該電子模組1a屬於大尺寸規格,其半導體晶片11與封裝材15之熱膨脹係數(Coefficient of thermal expansion,簡稱CTE)不匹配(mismatch),容易發生熱應力不均勻之情況,致使熱循環(thermal cycle)時,造成該電子模組1a發生翹曲。
因此,如何克服上述習知技術的問題,實已成目前亟欲解決的課題。
鑑於上述習知技術之種種缺失,本發明係提供一種電子封裝件,係包括:承載結構;電子模組,係設於該承載結構上並電性連接該承載結構;散熱結構,係結合於該電子模組上;以及調整結構,係結合於該散熱結構上並位於該電子模組之周圍。
本發明亦提供一種電子封裝件之製法,係包括:於一承載結構上設置電子模組,且令該電子模組電性連接該承載結構;將散熱結構結合於該電子模組上;以及將調整結構結合於該散熱結構上,並使該調整結構位於該電子模組之周圍。
前述之電子封裝件及其製法中,該散熱結構係具有延伸至該承載結構上之座部。
前述之電子封裝件及其製法中,該調整結構係為金屬材質或半導體材質。
前述之電子封裝件及其製法中,該調整結構係為環體。
前述之電子封裝件及其製法中,復包括於該承載結構上形成包覆該電子模組之第一封裝層、及包覆該調整結構與該第一封裝層之第二封裝層。例如,該第一封裝層之硬度係大於該第二封裝層之硬度。
前述之電子封裝件及其製法中,復包括以封裝層包覆該電子模組與該調整結構。
前述之電子封裝件及其製法中,復包括以封裝層包覆該電子模組,且該封裝層未包覆該調整結構。
由上可知,本發明之電子封裝件及其製法中,主要藉由該調整結構結合於該散熱結構上並位於該電子模組之周圍,以分散熱應力,故相較於習知技術,本發明於熱循環時能避免該電子模組發生翹曲。
1:半導體封裝件
1a,2a:電子模組
11:半導體晶片
15:封裝材
17:散熱件
19:封裝基板
2,3,4:電子封裝件
2b:封裝層
2c,261:底膠
20:線路結構
200:絕緣層
201:線路重佈層
202:電性接觸墊
21:第一電子元件
21a:作用面
21b:非作用面
210:電極墊
211:保護膜
212:導電體
212a,23a,23b:端面
22:結合層
23:導電柱
24,290:導電元件
240:線路部
25:第一包覆層
25a:第一表面
25b:第二表面
26:第二電子元件
260:導電凸塊
262:凸塊底下金屬層
27a,47a:調整結構
27b,47b:散熱結構
270:片體
271:腳部
272:座部
28:第二包覆層
29:承載結構
29a:線路層
31,41:第一封裝層
32:第二封裝層
40:空腔
47:框架
9:承載板
9a:晶種層
9b:金屬層
90:離型層
91:絕緣層
R:凹槽
S,L:切割路徑
圖1係為習知半導體封裝件之剖視示意圖。
圖2A至圖2H係為本發明之電子封裝件之製法之第一實施例的剖面示意圖。
圖3A至圖3C係為本發明之電子封裝件之製法之第二實施例的剖面示意圖。
圖4A及圖4B係為圖3C之其它不同方式的剖面示意圖。
圖4C係為圖4B之另一態樣之局部剖面示意圖。
以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。
須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如「上」、「第一」、「第二」、「一」等之用語,亦僅為便於敘述之
明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。
圖2A至圖2H係為本發明之電子封裝件2之製法之第一實施例的剖面示意圖。
如圖2A及圖2B所示,提供一具有晶種層9a之承載板9,再於該承載板9上藉由該晶種層9a形成複數導電柱23。接著,設置至少一第一電子元件21於該承載板9上,其中,該第一電子元件21上係結合並電性連接複數導電體212,且該導電體212係為如導電線路、銲球之圓球狀、或如銅柱、銲錫凸塊等金屬材之柱狀、或銲線機製作之釘狀(stud)導電件,但不限於此。
於本實施例中,該承載板9例如為半導體材質(如矽或玻璃)之板體,其上以例如塗佈方式依序形成有一離型層90、如鈦/銅之金屬層9b與一如介電材或防銲材之絕緣層91,以供該晶種層9a設於該絕緣層91上。
再者,於圖2A中,該晶種層9a上可形成有一圖案化阻層(圖略),以令該阻層外露該晶種層9a之部分表面,俾供佈設該些導電柱23。待製作該些導電柱23後,移除該圖案化阻層及其下之晶種層9a,如圖2B所示。
又,形成該導電柱23之材質係為如銅之金屬材或銲錫材,且形成該晶種層9a之材質係例如鈦/銅。
另外,該第一電子元件21係為主動元件、被動元件或其二者組合,且該主動元件係例如半導體晶片,而該被動元件係例如電阻、電容及電感。於本實施例中,該第一電子元件21係為半導體晶片,其具有相對之作用面21a與非作用面21b,該第一電子元件21係以其非作用面21b藉由一結合層22黏固於該絕緣層91上,而該作用面21a設有複數電極墊210與一如鈍化材之保護膜211,且該導電體212設於該保護膜211中。
如圖2C所示,形成一第一包覆層25於該承載板9之絕緣層91上,以令該第一包覆層25包覆該第一電子元件21、該些導電體212與該些導電柱23,其中,該第一包覆層25係具有相對之第一表面25a與第二表面25b,且令該保護膜211、該導電體212之端面212a與該導電柱23之端面23a外露於該第一包覆層25之第一表面25a,以及令該第一包覆層25以其第二表面25b結合至該承載板9之絕緣層91上。
於本實施例中,該第一包覆層25係為絕緣材,如聚醯亞胺(polyimide,簡稱PI)、乾膜(dry film)、如環氧樹脂(epoxy)之封裝膠體或封裝材(molding compound)。例如,該第一包覆層25之製程可選擇液態封膠(liquid compound)、噴塗(injection)、壓合(lamination)或模壓(compression molding)等方式形成於該絕緣層91上。
再者,可藉由整平製程,使該第一包覆層25之第一表面25a齊平該保護膜211、該導電柱23之端面23a與該導電體212之端面212a,以令該導電柱23之端面23a與該導電體212之端面212a外露於該第一包覆層25之第一表面25a。例如,該整平製程係藉由研磨方式,移除該保護膜211之部分材質、該導電柱23之部分材質、該導電體212之部分材質與該第一包覆層25之部分材質。
又,該些導電柱23之另一端面23b(由於該晶種層9a之厚度極小故予以忽略)亦可大致齊平該第一包覆層25之第二表面25b。
如圖2D所示,形成一線路結構20於該第一包覆層25之第一表面25a上,且令該線路結構20電性連接該導電柱23與該導電體212。
於本實施例中,該線路結構20係包括複數絕緣層200及設於該絕緣層200上之複數線路重佈層(redistribution layer,簡稱RDL)201,其中,最外層之絕緣層200可作為防銲層,且令最外層之線路重佈層201外露於該防銲層,俾
供作為電性接觸墊202,如微墊(micro pad,俗稱μ-pad)。或者,該線路結構20亦可僅包括單一絕緣層200及單一線路重佈層201。
再者,形成該線路重佈層201之材質係為銅,且形成該絕緣層200之材質係為如聚對二唑苯(Polybenzoxazole,簡稱PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)等之介電材、或如綠漆、油墨等之防銲材。
如圖2E所示,設置至少一第二電子元件26於該線路結構20上,再以一第二包覆層28包覆該第二電子元件26。於本實施例中,係設置兩個第二電子元件26於該線路結構20上。
於本實施例中,該第二電子元件26係為主動元件、被動元件或其二者組合,且該主動元件係例如半導體晶片,而該被動元件係例如電阻、電容及電感。於一實施態樣中,該第二電子元件26係例如為圖形處理器(graphics processing unit,簡稱GPU)、高頻寬記憶體(High Bandwidth Memory,簡稱HBM)等半導體晶片,並無特別限制。
再者,該第二電子元件26係藉由複數如銲錫凸塊、銅凸塊或其它等之導電凸塊260電性連接該電性接觸墊202,且該第二包覆層28可同時包覆該第二電子元件26與該些導電凸塊260。於本實施例中,可形成一凸塊底下金屬層(Under Bump Metallurgy,簡稱UBM)262於該電性接觸墊202上,以利於結合該導電凸塊260。
又,該第二包覆層28係為絕緣材,如聚醯亞胺(polyimide,簡稱PI)、乾膜(dry film)、如環氧樹脂(epoxy)之封裝膠體或封裝材(molding compound),其可用壓合(lamination)或模壓(molding)之方式形成於該線路結構20上。應可理解地,形成該第二包覆層28之材質可相同或不相同該第一包覆層25之材質。
另外,亦可先形成底膠261於該第二電子元件26與該線路結構20之間以包覆該些導電凸塊260,再形成該第二包覆層28以包覆該底膠261與該第二電子元件26。
如圖2F所示,移除該承載板9及其上之離型層90與金屬層9b,並保留該絕緣層91。接著,形成一線路部240於該絕緣層91上以電性連接該導電柱23。之後,沿如圖2E所示之切割路徑S進行切單製程,以獲取複數電子模組2a。
於本實施例中,於剝離該離型層90時,藉由該金屬層9b作為阻障之用,以避免破壞該絕緣層91,且待移除該承載板9及其上之離型層90後,再以蝕刻方式移除該金屬層9b。
再者,該絕緣層91係藉由雷射方式形成有複數開孔,以令該些導電柱23之端面23b及該第一包覆層25之部分第二表面25b外露於該些開孔,俾供結合該線路部240。例如,該線路部240係為凸塊底下金屬層(UBM),以供結合如複數銲錫凸塊或銲球(其規格為C4型)之導電元件24。應可理解地,當該接點(IO)之數量不足時,可藉由RDL製程於該絕緣層91上進行增層作業,以重新配置該導電元件24之IO數量及其位置。
又,可藉由整平製程,如研磨方式,移除該第二包覆層28之部分材質,使該第二包覆層28之上表面齊平該第二電子元件26之上表面,以令該第二電子元件26外露於該第二包覆層28(如圖2F所示)。
另外,藉由提供具有絕緣層91之承載板9,以於移除該承載板9後,可利用該絕緣層91形成該線路部240,因而無需再佈設介電層,故能節省製程時間與製程步驟,以達到降低製程成本之目的。
如圖2G所示,將該電子模組2a藉由該些導電元件24設置於一整版面規格之承載結構29上,且於該承載結構29上形成包覆該電子模組2a之封裝層
2b,其中,該承載結構29上配置有複數嵌埋於該封裝層2b內之調整結構27a,且該調整結構27a環繞該電子模組2a。
於本實施例中,該承載結構29係例如具有核心層之封裝基板(substrate)或無核心層(coreless)式封裝基板,其具有一絕緣基體與結合該絕緣基體之線路層29a,該線路層29a例如為扇出(fan out)型重佈線路層(RDL)。例如,形成該線路層29a之材質係例如為銅,而形成該絕緣基體之材質係例如為聚對二唑苯(Polybenzoxazole,簡稱PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)等之介電材。應可理解地,該承載結構亦可為其它可供承載電子元件之承載單元,例如導線架(lead frame)或矽中介板(silicon interposer),並不限於上述。
再者,可先形成底膠2c於該承載結構29與該電子模組2a之間以包覆該些導電元件24,再以該封裝層2b包覆該底膠2c與該電子模組2a,且該承載結構29下側可進行植球製程,以形成複數如銲球之導電元件290,俾於後續製程中,該承載結構29可以其下側之導電元件290接置於一電路板(圖略)上。
又,於該封裝層2b上沿切割路徑L形成凹槽R,以令該承載結構29之部分表面外露於該凹槽R,且該封裝層2b係為絕緣材,如聚醯亞胺(polyimide,簡稱PI)、乾膜(dry film)、如環氧樹脂(epoxy)之封裝膠體或封裝材(molding compound),其可用壓合(lamination)或模壓(molding)之方式形成於該承載結構29上。應可理解地,形成該封裝層2b之材質可相同或不相同該第一及/或第二包覆層25,28之材質。
另外,該調整結構27a係為如銅材之金屬環體或如矽材、玻璃之半導體材環體,其可藉由電鍍、黏固或其它方式配置於該承載結構29上。另,可藉由整平製程,如研磨方式,移除該封裝層2b之部分材質、該調整結構27a之部分材質與該電子模組2a之部分材質,使該封裝層2b之頂面齊平該調整結構27a之端
面與該電子模組2a之頂面,以令該調整結構27a之端面與該電子模組2a之頂面外露於該封裝層2b之頂面。
如圖2H所示,沿如圖2G所示之切割路徑L進行切單製程,再於該封裝層2b上形成散熱結構27b,以獲取電子封裝件2。
於本實施例中,該散熱結構27b係為金屬體,其以電鍍、沉積或其它方式形成於該封裝層2b上以接觸該調整結構27a。例如,該散熱結構27b係包含一形成於該封裝層2b頂面以接觸該調整結構27a之片體270及至少一形成於該封裝層2b側面之腳部271,並延伸至該承載結構29之部分表面上以作為座部272,其中,該座部272係突出該腳部271。
因此,本發明之製法主要藉由該調整結構27a分散熱應力,以於該電子模組2a屬於大尺寸規格時,其第一電子元件21與該第一包覆層25之熱膨脹係數(或該第二電子元件26與該第二包覆層28之熱膨脹係數)即使不匹配,仍可避免熱應力集中之情況,故相較於習知技術,本發明之電子封裝件2於熱循環時能避免該電子模組2a發生翹曲。
圖3A至圖3B係為本發明之電子封裝件3之製法之第二實施例的剖面示意圖。本實施例與第一實施例之差異在於封裝層之製作,故以下不再贅述相同處。
如圖3A所示,於圖2G所示之製程中,於該承載結構29上形成包覆該電子模組2a之第一封裝層31,且該第一封裝層31並未包覆該調整結構27a之外周面,以令該調整結構27a之周面外露於該第一封裝層31。
於本實施例中,該第一封裝層31係為絕緣材,如聚醯亞胺(polyimide,簡稱PI)、乾膜(dry film)、如環氧樹脂(epoxy)之封裝膠體或封裝材(molding compound),其可用壓合(lamination)或模壓(molding)之
方式形成於該承載結構29上。應可理解地,形成該第一封裝層31之材質可相同或不相同該第一及/或第二包覆層25,28之材質。
再者,形成該調整結構27a之材質係為如銅之金屬材或銲錫材,且可藉由整平製程,如研磨方式,移除該第一封裝層31之部分材質、該調整結構27a之部分材質與該電子模組2a之部分材質,使該第一封裝層31之頂面齊平該調整結構27a之端面與該電子模組2a之頂面,以令該調整結構27a之端面與該電子模組2a之頂面外露於該第一封裝層31之頂面。
如圖3B所示,於該承載結構29上形成包覆該調整結構27a周面與該第一封裝層31之第二封裝層32,且於該第二封裝層32上沿切割路徑L形成凹槽R,以令該承載結構29之部分表面外露於該凹槽R,以於該第二封裝層32及該凹槽R壁面上形成散熱結構27b,使該散熱結構27b覆蓋該承載結構29之外露處。
於本實施例中,該第二封裝層32係為絕緣材,如聚醯亞胺(polyimide,簡稱PI)、乾膜(dry film)、如環氧樹脂(epoxy)之封裝膠體或封裝材(molding compound),其可用壓合(lamination)或模壓(molding)之方式形成於該承載結構29上。應可理解地,形成該第二封裝層32材質可相同或不相同該第一封裝層31之材質。例如,該第一封裝層31之硬度可大於該第二封裝層32之硬度。
再者,可藉由整平製程,如研磨方式,移除該第二封裝層32之部分材質,使該第二封裝層32之頂面齊平該第一封裝層31之頂面,其後再設置散熱結構27b。
如圖3C所示,沿如圖3B所示之切割路徑L進行切單製程,以獲取電子封裝件3。
於前述實施例中,該承載結構29上係藉由兩次封裝製程,以形成第一封裝層31與第二封裝層32。惟可理解地,如圖4A所示之電子封裝件4,該承
載結構29上可依需求僅形成有第一封裝層,省略第二封裝層之配置,藉此於該散熱結構27b與該調整結構27a之間形成空腔40,使第一封裝層41形成於該電子模組2a與該調整結構27a之間,以令該調整結構27a之周面外露於該第一封裝層41。進一步地,如圖4B所示,該承載結構29上亦可依需求省略封裝製程(亦即省略第一封裝層及第二封裝層之配置),以於該散熱結構27b內形成空腔40。
再者,該調整結構27a係可藉由電鍍、黏固或其它方式配置於該承載結構29上,且該散熱結構27b係為金屬架,其以黏固方式設於該承載結構29上。應可理解地,若該調整結構與該散熱結構均以黏固方式設於該承載結構29上,則如圖4C所示,調整結構47a與散熱結構47b可為一體成形之框架47。
因此,本發明之製法主要藉由該調整結構27a,47a分散熱應力,以於該電子模組2a屬於大尺寸規格時,其第一電子元件21與第一包覆層25之熱膨脹係數(或該第二電子元件26與該第二包覆層28之熱膨脹係數)即使不匹配,仍可避免熱應力集中之情況,故相較於習知技術,本發明之電子封裝件3,4於熱循環時能避免該電子模組2a發生翹曲。
本發明亦提供一種電子封裝件2,3,4,係包括:一承載結構29、至少一電子模組2a、一散熱結構27b,47b、以及至少一調整結構27a,47a。
所述之電子模組2a係設於該承載結構29上並電性連接該承載結構29。
所述之散熱結構27b,47b係結合於該電子模組2a上。
所述之調整結構27a,47a係結合於該散熱結構27b,47b上並位於該電子模組2a之周圍。
於一實施例中,該散熱結構27b,47b係具有延伸至該承載結構29上之座部272。
於一實施例中,該調整結構27a,47a係為金屬材質或半導體材質。
於一實施例中,該調整結構27a,47a係為環體。
於一實施例中,該承載結構29上形成有包覆該電子模組2a之第一封裝層31、及包覆該調整結構27a,47a與該第一封裝層31之第二封裝層32。例如,該第一封裝層31之硬度係大於該第二封裝層32之硬度。
於一實施例中,所述之電子封裝件2復包括包覆該電子模組2a與該調整結構27a,47a之封裝層2b。
於一實施例中,所述之電子封裝件4復包括包覆該電子模組2a之第一封裝層41,其未包覆該調整結構27a,47a。亦或省略封裝製程,以於該散熱結構27b內形成有空腔40。
綜上所述,本發明之電子封裝件及其製法,係藉由調整結構之設計,以分散熱應力,故於電子模組屬於大尺寸規格時,其電子元件與包覆層之熱膨脹係數即使不匹配,仍可避免熱應力集中之情況,進而於熱循環時能避免電子模組發生翹曲。
上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。
2:電子封裝件
2a:電子模組
2b:封裝層
27a:調整結構
27b:散熱結構
270:片體
271:腳部
272:座部
29:承載結構
Claims (10)
- 一種電子封裝件,係包括:承載結構;電子模組,係設於該承載結構上並電性連接該承載結構,其中,該電子模組係包括第一包覆層、複數嵌埋於該第一包覆層中之導電柱、至少一嵌埋於該第一包覆層中之第一電子元件、一設於該第一包覆層上之線路結構及至少一設於該線路結構上且電性連接該線路結構之第二電子元件,以令該電子模組藉由複數導電元件設置於該承載結構上,且該複數導電元件係電性連接該複數導電柱;調整結構,係配置於該承載結構上並位於該電子模組之周圍;第一封裝層,係形成於該承載結構上以包覆該電子模組;第二封裝層,係形成於該承載結構上以包覆該調整結構與該第一封裝層,其中,該第一封裝層之硬度係大於該第二封裝層之硬度;以及散熱結構,係結合於該電子模組之第二電子元件與該調整結構之端面上,其中,該調整結構與該散熱結構係非一體成形。
- 如請求項1所述之電子封裝件,其中,該散熱結構係具有延伸至該承載結構上之座部。
- 如請求項1所述之電子封裝件,其中,該調整結構係為金屬材質或半導體材質。
- 如請求項1所述之電子封裝件,其中,該調整結構係為環體。
- 如請求項1所述之電子封裝件,其中,該第一封裝層未包覆該調整結構。
- 一種電子封裝件之製法,係包括: 於一承載結構上設置電子模組,且令該電子模組電性連接該承載結構,其中,該電子模組係包括第一包覆層、複數嵌埋於該第一包覆層中之導電柱、至少一嵌埋於該第一包覆層中之第一電子元件、一設於該第一包覆層上之線路結構及至少一設於該線路結構上且電性連接該線路結構之第二電子元件,以令該電子模組藉由複數導電元件設置於該承載結構上,且該複數導電元件係電性連接該複數導電柱;於該承載結構上形成第一封裝層,以令該第一封裝層包覆該電子模組;將調整結構結合於該承載結構上,並使該調整結構位於該電子模組之周圍;形成第二封裝層於該承載結構上,以令該第二封裝層包覆該調整結構與該第一封裝層,其中,該第一封裝層之硬度係大於該第二封裝層之硬度;以及於該調整結構結合於該承載結構上後,將散熱結構結合於該電子模組之第二電子元件與該調整結構之端面上。
- 如請求項6所述之電子封裝件之製法,其中,該散熱結構係具有延伸至該承載結構上之座部。
- 如請求項6所述之電子封裝件之製法,其中,該調整結構係為金屬材質或半導體材質。
- 如請求項6所述之電子封裝件之製法,其中,該調整結構係為環體。
- 如請求項6所述之電子封裝件之製法,其中,該第一封裝層未包覆該調整結構。
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US9466550B2 (en) * | 2014-10-11 | 2016-10-11 | Stmicroelectronics Pte Ltd | Electronic device with redistribution layer and stiffeners and related methods |
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