TWI826697B - processing device - Google Patents

processing device Download PDF

Info

Publication number
TWI826697B
TWI826697B TW109119551A TW109119551A TWI826697B TW I826697 B TWI826697 B TW I826697B TW 109119551 A TW109119551 A TW 109119551A TW 109119551 A TW109119551 A TW 109119551A TW I826697 B TWI826697 B TW I826697B
Authority
TW
Taiwan
Prior art keywords
holding
workpiece
holding surface
separated
tape
Prior art date
Application number
TW109119551A
Other languages
Chinese (zh)
Other versions
TW202105580A (en
Inventor
新田秀次
江角和也
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW202105580A publication Critical patent/TW202105580A/en
Application granted granted Critical
Publication of TWI826697B publication Critical patent/TWI826697B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05FSTATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICITY
    • H05F3/00Carrying-off electrostatic charges
    • H05F3/04Carrying-off electrostatic charges by means of spark gaps or other discharge devices
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05FSTATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICITY
    • H05F3/00Carrying-off electrostatic charges
    • H05F3/06Carrying-off electrostatic charges by means of ionising radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Dicing (AREA)

Abstract

[課題]在使晶圓從保持組件分開時,良好地進行靜電的消除。 [解決手段]藉由一邊將切割膠帶的下表面中的從工作夾台的保持面分開的分開部分的面積逐漸地變大,一邊對此部分噴附離子化空氣,而將切割膠帶所帶有的靜電去除。因此,可以既抑制從工作夾台的保持面分開的切割膠帶帶電之情形,並且一邊將切割膠帶所帶有的靜電除去一邊將工件組從保持面搬出。藉此,使已從工作夾台的保持面分開的切割膠帶難以帶有靜電。因此,可以抑制工件組之形成於晶圓的器件的品質的降低。[Problem] Eliminate static electricity well when separating the wafer from the holding assembly. [Solution] By spraying ionized air on the lower surface of the dicing tape that is separated from the holding surface of the work chuck while gradually increasing the area, the dicing tape is removed. of static electricity removal. Therefore, it is possible to remove the static electricity attached to the dicing tape while suppressing the charging of the dicing tape separated from the holding surface of the work chuck, while unloading the workpiece group from the holding surface. This makes it difficult for the dicing tape separated from the holding surface of the work chuck to become statically charged. Therefore, it is possible to suppress degradation in the quality of devices formed on the wafer in the workpiece set.

Description

處理裝置processing device

本發明是有關於一種處理裝置。The present invention relates to a processing device.

在如專利文獻1及專利文獻2所揭示之切割晶圓的切割裝置中,是將晶圓以隔著貼附於該其中一面之切割膠帶被保持組件所保持的狀態來進行切割加工。In the dicing apparatus for dicing wafers as disclosed in Patent Document 1 and Patent Document 2, the wafer is diced in a state held by a holding component via a dicing tape attached to one side thereof.

在此種切割裝置中,由於在切割加工後,在貼附於晶圓的切割膠帶帶有靜電,所以有形成於晶圓的器件的品質降低之情形。因此,為了去於切割膠帶所帶有的靜電,而對切割膠帶噴附有已離子化之空氣。In such a dicing device, the dicing tape attached to the wafer is charged with static electricity after the dicing process, so the quality of the devices formed on the wafer may be degraded. Therefore, in order to remove the static electricity contained in the dicing tape, the dicing tape is sprayed with ionized air.

例如,在專利文獻1所揭示的切割裝置中,是使已受到保持組件保持之貼附有切割膠帶之晶圓,在藉由搬送組件使其從保持組件分開之後,將空氣的噴射方向變更成緊跟著被搬送組件所保持而上升的晶圓,以讓已離子化之空氣碰觸於切割膠帶。 先前技術文獻 專利文獻For example, in the dicing device disclosed in Patent Document 1, the wafer with the dicing tape attached to it, which is held by the holding unit, is separated from the holding unit by the conveying unit, and then the direction of the air injection is changed to The wafer is lifted up as it is held by the transport assembly, allowing the ionized air to contact the dicing tape. Prior technical literature patent documents

專利文獻1:日本特開2012-049359號公報 專利文獻2:日本特開2015-112552號公報Patent Document 1: Japanese Patent Application Publication No. 2012-049359 Patent Document 2: Japanese Patent Application Publication No. 2015-112552

發明欲解決之課題The problem to be solved by the invention

但是,在以往的切割裝置中,是在晶圓完全地從保持面分開之後,才對切割膠帶噴附離子化空氣。因此,會有於切割膠帶殘存靜電的情形,仍然存在器件的品質降低的可能性。However, in conventional dicing devices, ionized air is sprayed onto the dicing tape after the wafer is completely separated from the holding surface. Therefore, there is a possibility that the quality of the device may be degraded due to residual static electricity in the cutting tape.

從而,本發明之目的在於:在使晶圓從保持組件分開時,藉由良好地進行靜電的消除,而抑制器件的品質降低。 用以解決課題之手段Therefore, an object of the present invention is to suppress degradation of device quality by effectively eliminating static electricity when the wafer is separated from the holding member. means to solve problems

本發明的第1處理裝置是以下的處理裝置,並具備: 保持組件,具有保持工件組的保持面,前述工件組是將切割膠帶貼附於環形框架與已配置在該環形框架的開口之被加工物來一體化之工件組,且前述保持面是隔著該切割膠帶來保持前述工件組; 處理組件,一邊對被加工物供給水一邊處理該被加工物,其中前述被加工物是已保持於該保持面之該工件組的被加工物; 升降組件,使具備有至少3個保持部的框架保持部在垂直於該保持面的方向上移動,且前述保持部是保持已保持於該保持面之該工件組的該環形框架;及 離子產生器,對該切割膠帶的下表面噴附離子化空氣,而將該切割膠帶所帶有的靜電去除, 又,該升降組件是構成為:使保持該工件組的該環形框架之該框架保持部上升,以讓該工件組的該切割膠帶的下表面從外周部分開始朝向中央逐漸地從該保持面分開, 該離子產生器是構成為:朝該切割膠帶的下表面中的已從該保持面分開的部分持續噴附離子化空氣,直到該切割膠帶的下表面全部從該保持面分開並進一步讓該切割膠帶的下表面從該保持面分開預定的距離為止, 且一邊去除該切割膠帶所帶有的靜電一邊將被加工物從該保持面搬出。The first processing device of the present invention is the following processing device and includes: The holding assembly has a holding surface that holds a workpiece group that is integrated with a workpiece arranged in an opening of the annular frame by attaching a cutting tape to the annular frame, and the holding surface is separated by The cutting tape to hold the aforementioned workpiece set; a processing component that processes the workpiece while supplying water to the workpiece, wherein the workpiece is a workpiece of the workpiece group held on the holding surface; The lifting assembly moves a frame holding part having at least three holding parts in a direction perpendicular to the holding surface, and the holding part is the annular frame holding the workpiece group held on the holding surface; and The ion generator sprays ionized air on the lower surface of the cutting tape to remove the static electricity carried by the cutting tape. Furthermore, the lifting assembly is configured to raise the frame holding portion of the annular frame holding the workpiece group so that the lower surface of the cutting tape of the workpiece group gradually separates from the holding surface starting from the outer peripheral portion toward the center. , The ion generator is configured to continue spraying ionized air toward the part of the lower surface of the cutting tape that has been separated from the holding surface until the lower surface of the cutting tape is completely separated from the holding surface and further allows the cutting until the lower surface of the tape is separated from the holding surface by a predetermined distance, The workpiece is removed from the holding surface while removing static electricity from the dicing tape.

本發明的第2處理裝置是以下的處理裝置,並具備: 保持組件,具有保持面,前述保持面將於其中一面具有保護構件的被加工物隔著該保護構件來保持; 處理組件,處理被該保持面所保持的被加工物; 升降組件,使具有吸附面的搬送墊在垂直於該保持面的方向上移動,前述吸附面是吸附保持其中一面已被該保持面所保持的被加工物的另一面;及 離子產生器,對該保護構件的下表面噴附離子化空氣,而將該保護構件所帶有的靜電去除, 又,前述處理裝置更具備變更該搬送墊的該吸附面與該保持面之相對的傾斜度的傾斜變更組件, 該傾斜變更組件是構成為:將吸附保持了被該保持面所保持的被加工物之該搬送墊的該吸附面與該保持面之相對的傾斜度,從該吸附面與該保持面互相平行的狀態逐漸地變大,藉此讓該被加工物的該保護構件的下表面中的從該保持面分開的分開部分之面積逐漸地變大, 該離子產生器是構成為:朝該保護構件的下表面中的從該保持面分開的分開部分持續噴附離子化空氣,直到該保護構件的下表面全部從該保持面分開並進一步讓該保護構件的下表面從該保持面分開預定的距離為止, 且一邊去除該保護構件所帶有的靜電一邊將被加工物從該保持面搬出。 發明效果The second processing device of the present invention is the following processing device and includes: A holding component having a holding surface that holds a workpiece having a protective member on one side across the protective member; The processing component processes the workpiece held by the holding surface; The lifting assembly moves the conveying pad having an adsorption surface in a direction perpendicular to the holding surface. The adsorption surface adsorbs and holds the other side of the workpiece, one side of which is held by the holding surface; and The ion generator sprays ionized air on the lower surface of the protective member to remove static electricity carried by the protective member. Furthermore, the aforementioned processing device further includes an inclination changing component for changing the relative inclination of the suction surface and the holding surface of the transfer pad, The inclination changing component is configured to adjust the relative inclination of the adsorption surface and the holding surface of the conveying pad that adsorbs and holds the workpiece held by the holding surface so that the adsorption surface and the holding surface are parallel to each other. The state gradually becomes larger, whereby the area of the separated portion separated from the holding surface in the lower surface of the protective member of the workpiece gradually becomes larger, The ion generator is configured to continuously spray ionized air toward the separated portion of the lower surface of the protective member that is separated from the holding surface until the lower surface of the protective member is completely separated from the holding surface and further allows the protection until the lower surface of the member is separated from the holding surface by a predetermined distance, And the workpiece is carried out from the holding surface while removing the static electricity carried by the protective member. Invention effect

在第1處理裝置中,是藉由一邊讓切割膠帶的下表面中的從保持組件的保持面分開的部分之面積逐漸地變大,一邊讓離子產生器對此部分噴附離子化空氣,而將切割膠帶所帶有的靜電去除。因此,可以既抑制從保持組件的保持面分開的切割膠帶帶電之情形,並且一邊將切割膠帶所帶有的靜電去除一邊將工件組從保持面搬出。藉此,已從保持組件的保持面分開的切割膠帶難以帶有靜電。因此,可以抑制工件組之形成於被加工物的器件的品質的降低。In the first processing device, the area of the portion of the lower surface of the dicing tape that is separated from the holding surface of the holding assembly is gradually increased, and the ion generator sprays ionized air to this portion. Remove static electricity from cutting tape. Therefore, it is possible to carry out the workpiece group from the holding surface while removing the static electricity attached to the dicing tape while suppressing the charging of the dicing tape separated from the holding surface of the holding unit. Thereby, the dicing tape separated from the holding surface of the holding assembly is less likely to become statically charged. Therefore, it is possible to suppress degradation in the quality of the devices formed on the workpiece of the workpiece group.

在第2處理裝置中,是一邊讓保護構件的下表面中的從保持組件的保持面分開的部分之面積逐漸地變大,一邊讓離子產生器對此部分噴附離子化空氣,而將保護構件所帶有的靜電去除。因此,可以既抑制從保持組件的保持面分開的保護構件帶電之情形,並且一邊將保護構件所帶有的靜電去除一邊將被加工物從保持面搬出。藉此,已從保持組件的保持面分開的保護構件難以帶有靜電。因此,可以抑制形成於被加工物之器件的品質的降低。In the second treatment device, while the area of the portion of the lower surface of the protective member separated from the holding surface of the holding assembly is gradually increased, the ion generator sprays ionized air on this portion to thereby protect the part. Remove static electricity from components. Therefore, it is possible to remove the static electricity attached to the protective member while suppressing the charge of the protective member separated from the holding surface of the holding unit, while unloading the workpiece from the holding surface. Thereby, the protective member separated from the holding surface of the holding assembly is less likely to be charged with static electricity. Therefore, it is possible to suppress deterioration in the quality of the device formed on the workpiece.

用以實施發明之形態Form used to implement the invention

如圖1所示,本實施形態之切割裝置1是處理裝置之一例,且對被加工物即晶圓W進行切割加工。As shown in FIG. 1 , the dicing device 1 of this embodiment is an example of a processing device, and performs dicing processing on a wafer W that is a workpiece.

晶圓W具有大致圓形形狀,且在正面形成有格子狀的分割預定線L。在藉由分割預定線L所區劃出的各區域中形成有各種器件(未圖示)。The wafer W has a substantially circular shape, and a grid-like dividing line L is formed on the front surface. Various devices (not shown) are formed in each area divided by the planned division line L.

於晶圓W的背面貼附有切割膠帶T1。於切割膠帶T1的外周貼附有環形框架F。亦即,工件組W1是藉由將切割膠帶T1貼附於環形框架F與已配置在環形框架F之開口的晶圓W來一體化而形成。A dicing tape T1 is attached to the back side of the wafer W. An annular frame F is attached to the outer periphery of the cutting tape T1. That is, the workpiece group W1 is formed by attaching the dicing tape T1 to the ring frame F and the wafer W arranged in the opening of the ring frame F to integrate them.

如此,晶圓W是以透過切割膠帶T1被環形框架F所支撐之工件組W1的狀態,在切割裝置1中被加工。又,工件組W1是容置於未圖示之片匣,並搬入切割裝置1。In this way, the wafer W is processed in the dicing device 1 in the state of the workpiece group W1 supported by the ring frame F through the dicing tape T1. In addition, the workpiece group W1 is accommodated in a cassette (not shown) and is carried into the cutting device 1 .

切割裝置1具有支撐台10、設置於支撐台10的工作夾台20、及豎立設置在支撐台10之長方體形的殼體12。The cutting device 1 has a support table 10 , a work clamp 20 provided on the support table 10 , and a rectangular parallelepiped-shaped housing 12 erected on the support table 10 .

於支撐台10的一端側設有片匣載台16,前述片匣載台16可供保持複數個工件組W1之片匣(未圖示)載置。A cassette holding platform 16 is provided at one end of the support platform 10 . The cassette holding platform 16 can be used to place cassettes (not shown) holding a plurality of workpiece groups W1 .

於片匣載台16與工作夾台20之間,設置有搬送工件組W1的推拉組件17。推拉組件17具備有:推拉臂171,使晶圓W從片匣出入;及推拉臂移動機構172,使推拉臂171在Y軸方向上往返移動。Between the cassette stage 16 and the work clamping table 20, a push-pull assembly 17 for transporting the workpiece group W1 is provided. The push-pull assembly 17 is provided with: a push-pull arm 171 that moves the wafer W in and out of the cassette; and a push-pull arm moving mechanism 172 that moves the push-pull arm 171 back and forth in the Y-axis direction.

又,於工作夾台20的殼體12側設有暫置工件組W1的暫置組件18。推拉組件17是從片匣載台16上的片匣將加工前的工件組W1搬送及載置到暫置組件18。暫置組件18是實施工件組W1的X軸方向的定位。In addition, a temporary holding unit 18 for temporarily holding the workpiece group W1 is provided on the casing 12 side of the work chuck 20 . The push-pull assembly 17 transports and places the pre-processed workpiece group W1 from the cassette on the cassette stage 16 to the temporary placement assembly 18 . The temporary assembly 18 performs positioning of the workpiece group W1 in the X-axis direction.

在工作夾台20之上部中的殼體12的前表面,設置有搬送組件30。搬送組件30會將暫置組件18上的工件組W1保持、並搬送及載置到工作夾台20。又,搬送組件30是在工作夾台20與旋轉洗淨單元24之間搬送工件組W1。A transfer unit 30 is provided on the front surface of the housing 12 in the upper part of the work chuck 20 . The transfer unit 30 holds the workpiece group W1 on the temporary holding unit 18, transfers it, and places it on the work chuck 20. Furthermore, the transport unit 30 transports the workpiece group W1 between the work chuck 20 and the rotary cleaning unit 24 .

搬送組件30具備有保持工件組W1的框架保持部31、使框架保持部31在Y軸方向上移動的框架保持部移動機構33、以及使框架保持部31在Z軸方向上升降的框架保持部升降機構35。The transfer unit 30 includes a frame holding part 31 that holds the workpiece group W1, a frame holding part moving mechanism 33 that moves the frame holding part 31 in the Y-axis direction, and a frame holding part that moves the frame holding part 31 up and down in the Z-axis direction. Lifting mechanism 35.

框架保持部31具備有保持工件組W1的環形框架F之4個保持部32。保持部32是所謂的吸盤,且可以吸附保持工件組W1的環形框架F。 又,框架保持部升降機構35是使框架保持部31在垂直於工作夾台20的保持面23的方向上移動之構成,且是升降組件之一例。The frame holding part 31 includes four holding parts 32 of the annular frame F holding the workpiece group W1. The holding part 32 is a so-called suction cup, and can suck and hold the annular frame F of the workpiece group W1. In addition, the frame holding part lifting mechanism 35 is configured to move the frame holding part 31 in a direction perpendicular to the holding surface 23 of the work chuck 20, and is an example of a lifting assembly.

工作夾台20是固定在移動板21上。移動板21是與蛇腹狀的防水蓋C一起覆蓋支撐台10的上表面中央的開口。在移動板21及防水蓋C的下方設有使移動板21及工作夾台20於X軸方向上移動之例如滾珠螺桿式的切割進給機構(未圖示)。The work clamping table 20 is fixed on the moving plate 21 . The movable plate 21 covers the opening in the center of the upper surface of the support base 10 together with the bellows-shaped waterproof cover C. Under the moving plate 21 and the waterproof cover C, a cutting feed mechanism (not shown), such as a ball screw type, is provided to move the moving plate 21 and the work chuck 20 in the X-axis direction.

工作夾台20是保持組件之一例,且具有由多孔陶瓷材所構成之保持面23。藉由在此保持面23所產生的負壓,可隔著切割膠帶T1吸引保持工件組W1。在工作夾台20的周圍設置有4個夾具22。可藉由各夾具22而從四方將工件組W1的環形框架F夾持固定。The work clamp 20 is an example of a holding component and has a holding surface 23 made of porous ceramic material. By the negative pressure generated on the holding surface 23, the workpiece group W1 can be attracted and held through the dicing tape T1. Four clamps 22 are provided around the work clamp table 20 . The annular frame F of the workpiece group W1 can be clamped and fixed from four directions by each clamp 22 .

工作夾台20是在保持有工件組W1的狀態下,與移動板21一起被切割進給機構從支撐台10上搬運至殼體12的內部的加工空間。在加工空間設有圖2所示之切割機構41。在加工空間中,是藉由切割機構41將晶圓W切割加工。The work clamp 20 holds the workpiece group W1 and is transported from the support table 10 to the processing space inside the casing 12 by the cutting and feeding mechanism together with the moving plate 21 . A cutting mechanism 41 shown in Figure 2 is provided in the processing space. In the processing space, the wafer W is cut and processed by the cutting mechanism 41 .

切割機構41是一邊對晶圓W供給水(切割水)一邊處理(切割加工)晶圓W的機構,且是處理機構之一例,其中前述晶圓W是已保持於工作夾台20的保持面23之工件組W1的晶圓W。The cutting mechanism 41 is a mechanism that processes (cuts) the wafer W while supplying water (cutting water) to the wafer W that is held on the holding surface of the chuck 20 , and is an example of the processing mechanism. 23. Wafer W of workpiece group W1.

如圖2所示,切割機構41具備有具有水平方向之旋轉軸的主軸42、以及可與主軸42一起旋轉的切割刀片43。 在切割加工之時,是一邊使主軸42旋轉一邊使切割刀片43下降,而使切割刀片43接觸於晶圓W。在切割刀片43與晶圓W的接觸部分,可藉由未圖示之切割水供給組件來供給切割水。此外,保持有工件組W1的工作夾台20在水平面內朝與主軸42的旋轉軸正交的方向移動。 如此進行,切割刀片43會沿著工件組W1中的晶圓W的分割預定線L(參照圖1)來切割加工晶圓W。As shown in FIG. 2 , the cutting mechanism 41 includes a main shaft 42 having a horizontal rotation axis, and a cutting blade 43 that can rotate together with the main shaft 42 . During the dicing process, the dicing blade 43 is lowered while the main shaft 42 is rotated, so that the dicing blade 43 is brought into contact with the wafer W. At the contact portion between the cutting blade 43 and the wafer W, cutting water can be supplied by a cutting water supply component (not shown). Furthermore, the work chuck 20 holding the workpiece group W1 moves in a horizontal plane in a direction orthogonal to the rotation axis of the spindle 42 . In this manner, the dicing blade 43 cuts the wafer W along the planned division line L (see FIG. 1 ) of the wafer W in the workpiece group W1.

已將晶圓W切割加工後,圖1所示之工作夾台20及移動板21是藉由切割進給機構而返回到支撐台10上。並且,工件組W1是藉由搬送組件30而從工作夾台20被送到工作夾台20的後側之旋轉洗淨單元24。After the wafer W has been cut and processed, the work chuck 20 and the moving plate 21 shown in FIG. 1 are returned to the support table 10 by the cutting and feeding mechanism. Furthermore, the workpiece group W1 is sent from the work chuck 20 to the rotary cleaning unit 24 on the rear side of the work chuck 20 by the transfer unit 30 .

旋轉洗淨單元24具備有保持工件組W1的旋轉工作台27、以及朝向已保持在旋轉工作台27的工件組W1噴射洗淨水及乾燥空氣之各種噴嘴(未圖示)。 旋轉工作台27是保持組件之一例,且具有隔著切割膠帶T1來保持工件組W1的旋轉保持面28。The rotary cleaning unit 24 includes a rotary table 27 that holds the workpiece group W1 and various nozzles (not shown) that inject wash water and dry air toward the workpiece group W1 held on the rotary table 27 . The rotary table 27 is an example of a holding unit, and has a rotary holding surface 28 that holds the workpiece group W1 via the dicing tape T1.

在旋轉洗淨單元24中,保持有工件組W1的旋轉工作台27會高速旋轉。並且,可朝向正在高速旋轉的工件組W1噴射洗淨水,來洗淨工件組W1。之後,噴射乾燥空氣來將工件組W1乾燥。 已乾燥的工件組W1是藉由搬送組件30而從旋轉工作台27取下。In the rotary cleaning unit 24, the rotary table 27 holding the workpiece group W1 rotates at high speed. Furthermore, the wash water can be sprayed toward the workpiece group W1 that is rotating at high speed, so that the workpiece group W1 can be washed. Thereafter, dry air is sprayed to dry the workpiece group W1. The dried workpiece group W1 is removed from the rotary table 27 by the transport assembly 30 .

如此,旋轉洗淨單元24是一邊對晶圓W供給水(洗淨水)一邊處理(洗淨)晶圓W之單元,且是處理組件之一例,其中前述晶圓W是已保持於旋轉工作台27的旋轉保持面28之工件組W1的晶圓W。In this way, the spin cleaning unit 24 is a unit that processes (cleans) the wafer W while supplying water (cleaning water) to the wafer W. The wafer W is held in the rotating operation and is an example of a processing module. The rotating surface 28 of the stage 27 holds the wafer W of the workpiece group W1.

在殼體12的側面設置有觸控面板40。可在觸控面板40顯示有關於切割裝置1之加工條件等的各種資訊。又,觸控面板40亦可為了設定加工條件等的各種資訊而使用。如此,觸控面板40作為顯示各種資訊的顯示組件(顯示畫面)而發揮功能,並且也作為用於輸入資訊的輸入組件而發揮功能。 又,在殼體12的內部具備有控制切割裝置1的各構件之控制部14。A touch panel 40 is provided on the side of the housing 12 . Various information regarding the processing conditions of the cutting device 1 can be displayed on the touch panel 40 . In addition, the touch panel 40 can also be used to set various information such as processing conditions. In this manner, the touch panel 40 functions as a display unit (display screen) that displays various information, and also functions as an input unit for inputting information. Furthermore, a control unit 14 for controlling each component of the cutting device 1 is provided inside the casing 12 .

又,在工作夾台20中的-Y方向側及+Y方向側,是將一對離子產生器51設置成沿著Y軸方向夾著工作夾台20。此外,在旋轉洗淨單元24中的-Y方向側及+Y方向側,也是將一對離子產生器51設置成沿著Y軸方向夾著旋轉工作台27。In addition, a pair of ion generators 51 are provided on the -Y direction side and the +Y direction side of the work chuck 20 so as to sandwich the work chuck 20 along the Y-axis direction. In addition, a pair of ion generators 51 are also provided on the -Y direction side and the +Y direction side of the rotary cleaning unit 24 so as to sandwich the rotary table 27 along the Y-axis direction.

如圖3所示,離子產生器51具有複數個送風口53。離子產生器51內置有風扇(未圖示),並構成為使風扇旋轉來從外部攝入空氣,並從送風口53吹出為離子化空氣。 再者,離子產生器51亦可是不使用風扇的構成。在該情況下,是使其與空氣供給源連通,並將從空氣供給源所供給的空氣從送風口53吹出為離子化空氣。As shown in FIG. 3 , the ion generator 51 has a plurality of air supply ports 53 . The ion generator 51 has a built-in fan (not shown), and is configured to rotate the fan to take in air from the outside and blow it out as ionized air from the air supply port 53 . Furthermore, the ion generator 51 may be configured without using a fan. In this case, it is connected to the air supply source, and the air supplied from the air supply source is blown out from the air blower 53 as ionized air.

設置成夾著工作夾台20的離子產生器51是以將送風口53朝向工作夾台20的方式配置。這些離子產生器51是朝向工作夾台20的保持面23吹出離子化空氣。從而,在將工件組W1從保持面23分開時,離子產生器51是朝向工件組W1中的切割膠帶T1的下表面吹出離子化空氣。藉此,離子產生器51將切割膠帶T1所帶有的靜電去除。The ion generator 51 installed across the work chuck 20 is disposed so that the air blower 53 faces the work chuck 20 . These ion generators 51 blow ionized air toward the holding surface 23 of the work chuck 20 . Therefore, when the workpiece group W1 is separated from the holding surface 23 , the ion generator 51 blows the ionized air toward the lower surface of the dicing tape T1 in the workpiece group W1 . Thereby, the ion generator 51 removes the static electricity contained in the dicing tape T1.

另一方面,設置成夾著旋轉洗淨單元24的旋轉工作台27之離子產生器51,是以將送風口53朝向旋轉工作台27的方式配置。這些離子產生器51是朝向旋轉工作台27的旋轉保持面28吹出離子化空氣。從而,在將工件組W1從旋轉保持面28分開時,離子產生器51是朝向工件組W1中的切割膠帶T1的下表面吹出離子化空氣。藉此,離子產生器51將切割膠帶T1所帶有的靜電去除。On the other hand, the ion generator 51 installed across the rotary table 27 of the rotary cleaning unit 24 is arranged so that the air blower 53 faces the rotary table 27 . These ion generators 51 blow ionized air toward the rotation holding surface 28 of the rotation table 27 . Therefore, when the workpiece group W1 is separated from the rotation holding surface 28, the ion generator 51 blows the ionized air toward the lower surface of the dicing tape T1 in the workpiece group W1. Thereby, the ion generator 51 removes the static electricity contained in the dicing tape T1.

接著,說明切割裝置1中的由搬送組件30所進行之工件組W1的搬送動作。以下的動作是藉由例如控制部14的控制來實施。Next, the transport operation of the workpiece group W1 by the transport unit 30 in the cutting device 1 will be described. The following operations are implemented, for example, under the control of the control unit 14 .

將已載置於工作夾台20之工件組W1於藉由圖2所示之切割機構41來切割加工,且讓工作夾台20返回到支撐台10上之後,控制部14會控制搬送組件30,而將工件組W1從工作夾台20取下並搬送至旋轉洗淨單元24。After the workpiece group W1 placed on the work chuck 20 is cut by the cutting mechanism 41 shown in FIG. 2 and the work chuck 20 is returned to the support table 10 , the control unit 14 controls the transport assembly 30 , and the workpiece group W1 is removed from the work chuck 20 and transported to the rotary cleaning unit 24 .

也就是,首先,如圖4所示,可將搬送組件30配置在已載置於工作夾台20的保持面23之工件組W1的上方。如此圖所示,框架保持部31的保持部32是透過吸引閥36而連接到吸引源37。藉由將吸引閥36開放,可將保持部32連通於吸引源37而讓保持部32具有吸引力。再者,在圖4所示之狀態下,吸引閥36是關閉的。That is, first, as shown in FIG. 4 , the transport assembly 30 can be arranged above the workpiece group W1 placed on the holding surface 23 of the work chuck 20 . As shown in this figure, the holding part 32 of the frame holding part 31 is connected to the suction source 37 through the suction valve 36. By opening the suction valve 36, the holding part 32 can be connected to the suction source 37 so that the holding part 32 has suction force. Furthermore, in the state shown in Fig. 4, the suction valve 36 is closed.

之後,如圖5所示,讓已將工件組W1的環形框架F固定住之夾具22從環形框架F退開。此外,將吸引閥36開放,並且搬送組件30的框架保持部升降機構35將框架保持部31朝下方(-Z方向)移動,直到該保持部32吸附保持環形框架F為止。Thereafter, as shown in FIG. 5 , the clamp 22 that has fixed the annular frame F of the workpiece group W1 is retracted from the annular frame F. Furthermore, the suction valve 36 is opened, and the frame holding part lifting mechanism 35 of the conveyance unit 30 moves the frame holding part 31 downward (-Z direction) until the holding part 32 attracts and holds the annular frame F.

當保持部32已吸附保持環形框架F後,如圖6所示,框架保持部升降機構35將框架保持部31朝上方(+Z方向)移動。 此時,框架保持部升降機構35是如圖6及圖7所示,使保持環形框架F的框架保持部31上升,以使工件組W1的切割膠帶T1的下表面從外周部分開始朝向中央逐漸地從保持面23分開。After the holding part 32 has attracted and held the annular frame F, as shown in FIG. 6 , the frame holding part lifting mechanism 35 moves the frame holding part 31 upward (+Z direction). At this time, as shown in FIGS. 6 and 7 , the frame holding part lifting mechanism 35 lifts the frame holding part 31 holding the annular frame F so that the lower surface of the dicing tape T1 of the workpiece group W1 gradually moves from the outer peripheral part toward the center. The ground is separated from the retaining surface 23.

亦即,在框架保持部31(工件組W1)的上升的開始時,是透過框架保持部31的保持部32及環形框架F,將柔軟的切割膠帶T1的外周部分舉起。藉此,撓曲成切割膠帶T1的中央變得較低,而變形成外周部分朝上方翹曲。然後,隨著框架保持部31的上升,切割膠帶T1的下表面中的已從保持面23分開的部分朝向中央部分而擴大。亦即,隨著框架保持部31的上升,切割膠帶T1的下表面中的從工作夾台20的保持面23分開的部分的面積逐漸地變大。That is, when the frame holding part 31 (workpiece group W1) starts to rise, the outer peripheral part of the flexible dicing tape T1 is lifted through the holding part 32 of the frame holding part 31 and the ring frame F. Thereby, the center of the dicing tape T1 is deflected to become lower, and the outer peripheral portion is deformed to be bent upward. Then, as the frame holding portion 31 rises, the portion of the lower surface of the dicing tape T1 separated from the holding surface 23 expands toward the center portion. That is, as the frame holding portion 31 rises, the area of the portion of the lower surface of the dicing tape T1 separated from the holding surface 23 of the work chuck 20 gradually becomes larger.

又,此時,如圖7所示,離子產生器51會從例如切割膠帶T1的下表面的外周部分已開始從保持面23分開時起,對切割膠帶T1的下表面中的已從保持面23分開的部分噴附離子化空氣A1。In addition, at this time, as shown in FIG. 7 , the ion generator 51 , for example, starts from the time when the outer peripheral part of the lower surface of the dicing tape T1 starts to separate from the holding surface 23 . 23 The separated parts are sprayed with ionized air A1.

然後,如圖7及圖8所示,離子產生器51是朝切割膠帶T1的下表面中的已從保持面23分開的部分持續噴附離子化空氣A1,直到切割膠帶T1的下表面全部從保持面23分開並進一步讓切割膠帶T1的下表面從保持面23分開預定的距離D1為止。 此距離D1是例如保持面23與切割膠帶T1的下表面之間的靜電的相互作用變得小到可以忽略的程度之距離。Then, as shown in FIGS. 7 and 8 , the ion generator 51 continues to spray the ionized air A1 toward the portion of the lower surface of the dicing tape T1 that has been separated from the holding surface 23 until the lower surface of the dicing tape T1 is completely separated from the holding surface 23 . The holding surface 23 is separated until the lower surface of the cutting tape T1 is further separated from the holding surface 23 by a predetermined distance D1. This distance D1 is, for example, a distance at which the electrostatic interaction between the holding surface 23 and the lower surface of the dicing tape T1 becomes so small that it can be ignored.

如以上,在本實施形態中,是藉由一邊將切割膠帶T1的下表面中的從工作夾台20的保持面23分開的分開部分的面積逐漸地變大,一邊讓離子產生器51對此部分噴附離子化空氣A1,而將切割膠帶T1所帶有的靜電去除。因此,可以既抑制從工作夾台20的保持面23分開的切割膠帶T1帶電之情形,並且一邊將切割膠帶T1所帶有的靜電除去一邊將工件組W1從保持面23搬出。藉此,使已從工作夾台20的保持面23分開的切割膠帶T1難以帶有靜電。因此,可以抑制工件組W1之形成於晶圓W的器件的品質的降低。As described above, in this embodiment, the ion generator 51 responds by gradually increasing the area of the separated portion of the lower surface of the dicing tape T1 that is separated from the holding surface 23 of the work chuck 20 . The ionized air A1 is partially sprayed to remove the static electricity contained in the cutting tape T1. Therefore, it is possible to unload the workpiece group W1 from the holding surface 23 while removing the static electricity attached to the dicing tape T1 while suppressing the charging of the dicing tape T1 separated from the holding surface 23 of the work chuck 20 . Thereby, the dicing tape T1 separated from the holding surface 23 of the work chuck 20 is less likely to be charged with static electricity. Therefore, it is possible to suppress degradation in the quality of the devices formed on the wafer W in the workpiece group W1.

再者,「切割膠帶T1的下表面從外周部分開始朝向中央逐漸地從保持面23分開」意指例如以下情形:首先使切割膠帶T1的下表面中的僅外周部分從保持面23分開,另一方面,其他部分仍接觸於保持面23,之後,切割膠帶T1的下表面中的從保持面23分開的部分,隨著框架保持部31的上升而朝中央部分擴大,當中央部分已分開時,切割膠帶T1的下表面的整體即從保持面23分開。Furthermore, "the lower surface of the dicing tape T1 is gradually separated from the holding surface 23 from the outer peripheral part toward the center" means, for example, the following situation: first, only the outer peripheral part of the lower surface of the dicing tape T1 is separated from the holding surface 23, and then On the one hand, other parts are still in contact with the holding surface 23. After that, the part of the lower surface of the cutting tape T1 that is separated from the holding surface 23 expands toward the central part as the frame holding part 31 rises. When the central part has been separated , the entire lower surface of the cutting tape T1 is separated from the holding surface 23 .

又,在本實施形態中,作為由搬送組件30所進行之工件組W1的搬送動作之例,已針對從工作夾台20的保持面23將工件組W1取下之動作進行說明。有關於此,在從圖1所示之旋轉洗淨單元24中的旋轉工作台27之旋轉保持面28取下工件組W1時,搬送組件30及離子產生器51也是實施同樣的動作。Furthermore, in this embodiment, as an example of the transportation operation of the workpiece group W1 by the transportation unit 30, the operation of removing the workpiece group W1 from the holding surface 23 of the work chuck 20 has been described. In this regard, when the workpiece group W1 is removed from the rotation holding surface 28 of the rotation table 27 in the rotation cleaning unit 24 shown in FIG. 1 , the transport unit 30 and the ion generator 51 also perform the same operation.

亦即,搬送組件30的框架保持部升降機構35是與使用圖4~圖8所示的動作同樣地,使工件組W1從旋轉保持面28上升,以使切割膠帶T1的下表面中的從旋轉工作台27的旋轉保持面28分開的分開部分之面積逐漸地變大。此時,設置成夾著旋轉洗淨單元24的離子產生器51朝切割膠帶T1中的從旋轉保持面28分開的部分噴附離子化空氣。That is, the frame holding part lifting mechanism 35 of the conveying unit 30 lifts the workpiece group W1 from the rotation holding surface 28 in the same manner as shown in FIGS. 4 to 8 so that the lower surface of the dicing tape T1 moves from The area of the divided portion where the rotation holding surface 28 of the rotation table 27 is separated gradually becomes larger. At this time, the ion generator 51 provided so as to sandwich the rotation cleaning unit 24 sprays ionized air toward the portion of the dicing tape T1 separated from the rotation holding surface 28 .

藉此,可抑制從旋轉保持面28分開的切割膠帶T1帶電之情形,並且將切割膠帶T1所帶有的靜電去除。因此,可以使已從旋轉保持面28分開的切割膠帶T1難以帶有靜電。從而,可以抑制工件組W1之形成於晶圓W的器件的品質的降低。Thereby, the charging of the dicing tape T1 separated from the rotation holding surface 28 can be suppressed, and the static electricity carried by the dicing tape T1 can be removed. Therefore, the dicing tape T1 separated from the rotation holding surface 28 can be made less likely to become statically charged. Therefore, it is possible to suppress a decrease in the quality of the devices formed on the wafer W in the workpiece group W1.

又,在本實施形態中,在搬送組件30的框架保持部31所具備的保持部32為吸盤。 又,在本實施形態中,框架保持部31具備有4個保持部32。有關於此,框架保持部31只要具備有至少3個保持部32即可。Moreover, in this embodiment, the holding part 32 provided in the frame holding part 31 of the conveyance unit 30 is a suction cup. Furthermore, in this embodiment, the frame holding part 31 is provided with four holding parts 32 . In this regard, the frame holding part 31 only needs to include at least three holding parts 32 .

又,在本實施形態中,作為對被加工物進行加工處理的處理裝置,例示有切割加工晶圓W的切割裝置1。本實施形態的處理裝置亦可為例如以下裝置來取而代之:對被加工物進行磨削加工的磨削裝置、藉由雷射光來加工被加工物的雷射加工裝置、對被加工物進行刀具切割的刀具切割裝置、用於將被加工物分割成晶片的擴張裝置、或是將膠帶安裝到被加工物的膠帶貼合機。In this embodiment, as a processing device for processing a workpiece, a dicing device 1 for dicing the wafer W is exemplified. The processing device of this embodiment may be replaced by, for example, the following devices: a grinding device that grinds the workpiece, a laser processing device that processes the workpiece with laser light, or a cutting device that cuts the workpiece. A knife cutting device, an expansion device for dividing the workpiece into wafers, or a tape laminating machine for attaching tape to the workpiece.

在此,說明本實施形態之處理裝置為磨削裝置的情況。 如圖9所示,磨削裝置2具有用於保持被加工物之作為保持組件之工作夾台60、對被加工物進行磨削處理的處理組件55、用於對工作夾台60搬送(搬入及搬出)被加工物的搬送機構71、圖3所示的離子產生器51、以及控制磨削裝置2的各構件的控制部57。Here, a case where the processing device according to this embodiment is a grinding device will be described. As shown in FIG. 9 , the grinding device 2 has a work chuck 60 as a holding unit for holding a workpiece, a processing unit 55 for grinding the workpiece, and a work chuck 60 for transporting (carrying in) the workpiece. and unloading) the workpiece conveying mechanism 71, the ion generator 51 shown in FIG. 3, and the control unit 57 that controls each component of the grinding device 2.

如圖10所示,在作為被加工物的晶圓W中,在其中一面即正面Wa形成有未圖示的器件。晶圓W的正面Wa在圖10中是朝向下方,並藉由貼附為保護構件的保護膠帶T2而被保護。晶圓W的另一面即背面Wb,是成為施行磨削處理的被加工面。As shown in FIG. 10 , in a wafer W that is a workpiece, a device (not shown) is formed on one of the front surfaces Wa. The front surface Wa of the wafer W faces downward in FIG. 10 and is protected by a protective tape T2 attached as a protective member. The other surface of the wafer W, that is, the back surface Wb, serves as a surface to be processed by grinding.

工作夾台60具有由多孔陶瓷材所構成的保持面63。可藉由產生於此保持面63的負壓,而隔著保護膠帶T2來吸引保持晶圓W。 圖9所示的處理組件55是對保持於此保持面63的晶圓W進行磨削處理。The work clamp 60 has a holding surface 63 made of porous ceramic material. The negative pressure generated on the holding surface 63 can attract and hold the wafer W through the protective tape T2. The processing assembly 55 shown in FIG. 9 performs a grinding process on the wafer W held on the holding surface 63 .

又,如圖10所示,搬送機構71具備有保持晶圓W的搬送墊72、透過連結部76保持搬送墊72的搬送臂74、及使搬送墊72及搬送臂74升降的升降組件75。Furthermore, as shown in FIG. 10 , the transfer mechanism 71 includes a transfer pad 72 that holds the wafer W, a transfer arm 74 that holds the transfer pad 72 through the connection portion 76 , and a lifting assembly 75 that raises and lowers the transfer pad 72 and the transfer arm 74 .

搬送墊72具有用於保持晶圓W之平行於工作夾台60的保持面63的向下的吸附面73。在藉由搬送機構71將已保持於工作夾台60的保持面63之晶圓W搬出時,吸附面73是對已保持在保持面63之晶圓W的背面Wb進行吸附保持。The transfer pad 72 has a downward suction surface 73 for holding the wafer W parallel to the holding surface 63 of the chuck 60 . When the wafer W held on the holding surface 63 of the chuck 60 is moved out by the transport mechanism 71 , the suction surface 73 suctions and holds the back surface Wb of the wafer W held on the holding surface 63 .

搬送墊72是透過連結部76而安裝在搬送臂74的前端。 連結部76是以貫通於設置在搬送臂74的前端的貫通孔77的狀態安裝於搬送臂74。連結部76在上端具有擴徑部81,而使從貫通孔77脫落之情形受到抑制。The conveying pad 72 is attached to the front end of the conveying arm 74 through the connecting portion 76 . The connecting portion 76 is attached to the transfer arm 74 in a state of penetrating through a through hole 77 provided at the front end of the transfer arm 74 . The connecting portion 76 has an enlarged diameter portion 81 at the upper end, thereby suppressing the connecting portion 76 from falling off from the through hole 77 .

連結部76之下端是安裝於搬送墊72的上表面。又,搬送臂74的下表面與搬送墊72的上表面之間配設有彈簧83,前述彈簧83是設置成包圍連結部76。彈簧83是將搬送臂74的下表面與搬送墊72的上表面朝讓其等相互遠離的方向賦與勢能。The lower end of the connecting portion 76 is attached to the upper surface of the transfer pad 72 . In addition, a spring 83 is disposed between the lower surface of the transfer arm 74 and the upper surface of the transfer pad 72 , and the spring 83 is provided so as to surround the connecting portion 76 . The spring 83 imparts potential energy to the lower surface of the transfer arm 74 and the upper surface of the transfer pad 72 in a direction that moves them away from each other.

搬送臂74的基端側是安裝於升降組件75。升降組件75是使搬送墊72及搬送臂74沿著垂直於工作夾台60的保持面63之方向即Z軸方向升降。The base end side of the transfer arm 74 is attached to the lifting assembly 75 . The lifting assembly 75 raises and lowers the transfer pad 72 and the transfer arm 74 along the direction perpendicular to the holding surface 63 of the work chuck 60 , that is, the Z-axis direction.

又,在搬送臂74的上表面74a安裝有傾斜變更組件85,前述傾斜變更組件85是變更搬送墊72的吸附面73與工作夾台20的保持面23之相對的傾斜度。傾斜變更組件85是構成為可藉由控制部57的控制而沿著搬送臂74的延伸方向移動。Furthermore, an inclination changing unit 85 for changing the relative inclination between the suction surface 73 of the transfer pad 72 and the holding surface 23 of the work chuck 20 is mounted on the upper surface 74 a of the transfer arm 74 . The inclination changing unit 85 is configured to be movable along the extending direction of the transport arm 74 under the control of the control unit 57 .

傾斜變更組件85,在其前端具有楔形的楔部86。傾斜變更組件85可藉由在搬送臂74的上表面74a朝搬送臂74的前端方向移動,而使楔部86進入上表面74a與連結部76的擴徑部81之間。The tilt changing assembly 85 has a wedge-shaped wedge portion 86 at its front end. The tilt changing assembly 85 moves the upper surface 74 a of the transport arm 74 toward the front end of the transport arm 74 so that the wedge portion 86 enters between the upper surface 74 a and the enlarged diameter portion 81 of the connecting portion 76 .

又,於工作夾台60中的-X側是將圖3所示的離子產生器51以讓其送風口53朝向工作夾台60的狀態來設置。離子產生器51是朝向工作夾台60的保持面63吹出離子化空氣。 從而,在藉由搬送墊72將晶圓W從保持面63分開時,離子產生器51是朝向晶圓W的保護膠帶T2的下表面吹出離子化空氣。藉此,離子產生器51將保護膠帶T2所帶有的靜電去除。In addition, the ion generator 51 shown in FIG. 3 is installed on the -X side of the work chuck 60 with its air blower 53 facing the work chuck 60 . The ion generator 51 blows ionized air toward the holding surface 63 of the work chuck 60 . Therefore, when the wafer W is separated from the holding surface 63 by the transfer pad 72 , the ion generator 51 blows the ionized air toward the lower surface of the protective tape T2 of the wafer W. Thereby, the ion generator 51 removes the static electricity contained in the protective tape T2.

在此,說明由搬送機構71所進行之晶圓W的搬送動作。以下的動作是藉由例如控制部57的控制來實施。 將已載置於工作夾台60之晶圓W藉由圖9所示之處理組件55來磨削加工後,控制部57會控制搬送機構71,而將晶圓W從工作夾台60取下。Here, the transportation operation of the wafer W by the transportation mechanism 71 will be described. The following operations are implemented, for example, under the control of the control unit 57 . After the wafer W placed on the work chuck 60 is ground by the processing assembly 55 shown in FIG. 9 , the control unit 57 controls the transport mechanism 71 to remove the wafer W from the work chuck 60 .

亦即,首先,如圖10所示,將搬送機構71配置在已載置於工作夾台60的保持面63之晶圓W的上方。如此圖所示,安裝在搬送臂74之搬送墊72的吸附面73是透過吸引閥91而連接到吸引源92。藉由將吸引閥91開放,可將吸附面73連通於吸引源92而讓吸附面73具有吸引力。再者,在圖10所示之狀態下,吸引閥91是關閉的。That is, first, as shown in FIG. 10 , the transport mechanism 71 is arranged above the wafer W placed on the holding surface 63 of the chuck 60 . As shown in this figure, the suction surface 73 of the transfer pad 72 installed on the transfer arm 74 is connected to the suction source 92 through the suction valve 91 . By opening the suction valve 91, the adsorption surface 73 can be connected to the suction source 92 so that the adsorption surface 73 has suction force. Furthermore, in the state shown in Fig. 10, the suction valve 91 is closed.

之後,將吸引閥91開放,並且搬送機構71的升降組件75使搬送臂74朝下方(-Z方向)移動到搬送墊72的吸附面73保持(吸附)晶圓W為止。Thereafter, the suction valve 91 is opened, and the lift assembly 75 of the transfer mechanism 71 moves the transfer arm 74 downward (-Z direction) until the suction surface 73 of the transfer pad 72 holds (adsorbs) the wafer W.

在吸附面73保持有晶圓W之後,如圖11所示,藉由傾斜變更組件85在搬送臂74的上表面74a朝搬送臂74的前端方向(+X方向)移動,使楔部86進入上表面74a與連結部76的擴徑部81之間。After the wafer W is held on the suction surface 73 , as shown in FIG. 11 , the tilt change unit 85 moves the upper surface 74 a of the transfer arm 74 toward the front end direction (+X direction) of the transfer arm 74 , so that the wedge portion 86 enters the transfer arm 74 . between the upper surface 74a and the enlarged diameter portion 81 of the connecting portion 76.

當像這樣使楔部86進入到搬送臂74的上表面74a與連結部76的擴徑部81之間時,連結部76中的搬送臂74的基端側(-X側)之部分會逐漸被楔部86所舉起。其結果,被連結部76所支撐的搬送墊72的吸附面73相對於工作夾台60的保持面63逐漸地傾斜成使-X側變得較高。When the wedge portion 86 is inserted between the upper surface 74a of the transfer arm 74 and the enlarged diameter portion 81 of the connection portion 76, the portion of the connection portion 76 on the base end side (-X side) of the transfer arm 74 gradually Lifted by wedge 86. As a result, the adsorption surface 73 of the transfer pad 72 supported by the connection part 76 is gradually inclined with respect to the holding surface 63 of the work chuck 60 so that the −X side becomes higher.

如此進行,傾斜變更組件85會將吸附保持了被保持面63所保持之晶圓W的搬送墊72的吸附面73與保持面63的相對的傾斜度,從吸附面73與保持面63互相平行的狀態逐漸地變大。也就是說,傾斜變更組件85是讓搬送墊72的吸附面73從相對於工作夾台60的保持面63平行的狀態(傾斜度差為零的狀態),逐漸地傾斜(傾斜度差變大的狀態)。藉此,使晶圓W的保護膠帶T2的下表面中的-X側從保持面63一點一點地分開。如此進行,傾斜變更組件85會將晶圓W的保護膠帶T2的下表面中的從保持面63分開的分開部分的面積逐漸地變大。In this manner, the inclination changing component 85 adjusts the relative inclination of the adsorption surface 73 of the transfer pad 72 holding the wafer W held by the holding surface 63 to the position where the adsorption surface 73 and the holding surface 63 are parallel to each other. The state gradually becomes larger. That is, the inclination changing unit 85 gradually inclines the suction surface 73 of the transfer pad 72 from a state in which it is parallel to the holding surface 63 of the work chuck 60 (a state in which the inclination difference is zero) (the inclination difference becomes larger). status). Thereby, the −X side of the lower surface of the protective tape T2 of the wafer W is gradually separated from the holding surface 63 . In this manner, the tilt changing component 85 gradually increases the area of the separated portion separated from the holding surface 63 in the lower surface of the protective tape T2 of the wafer W.

又,此時,如圖11所示,位於工作夾台60的-X側的離子產生器51從例如保護膠帶T2的一部分已開始從保持面63分開時起,對保護膠帶T2的下表面中的從保持面63分開的分開部分噴附離子化空氣A2。At this time, as shown in FIG. 11 , the ion generator 51 located on the −X side of the work chuck 60 starts to ignite the lower surface of the protective tape T2 from the time when a part of the protective tape T2 starts to separate from the holding surface 63 . The separated portion separated from the holding surface 63 is sprayed with ionized air A2.

之後,升降組件75使搬送臂74朝上方(+Z方向)移動。藉此,可使保護膠帶T2的下表面中的從保持面63分開的分開部分進一步擴大地露出。 然後,如圖11及圖12所示,離子產生器51是朝保護膠帶T2的下表面中的已從保持面63分開的部分持續噴附離子化空氣A2,直到保護膠帶T2的下表面全部從保持面63分開並進一步讓保護膠帶T2的下表面從保持面63分開預定的距離D2為止。 此距離D2是例如保持面63與保護膠帶T2的下表面之間的靜電的相互作用變得小到可以忽略的程度之距離。Thereafter, the lifting unit 75 moves the transfer arm 74 upward (+Z direction). Thereby, the separated part separated from the holding surface 63 in the lower surface of the protective tape T2 can be further expanded and exposed. Then, as shown in FIGS. 11 and 12 , the ion generator 51 continues to spray the ionized air A2 toward the portion of the lower surface of the protective tape T2 that has been separated from the holding surface 63 until the lower surface of the protective tape T2 is completely separated from the holding surface 63 . The holding surface 63 is separated until the lower surface of the protective tape T2 is further separated from the holding surface 63 by a predetermined distance D2. This distance D2 is, for example, a distance at which the electrostatic interaction between the holding surface 63 and the lower surface of the protective tape T2 becomes so small that it can be ignored.

像這樣,即使在磨削裝置2中,也是藉由一邊將保護膠帶T2的下表面中的從保持面63分開的分開部分的面積逐漸地變大,一邊讓離子產生器51對此部分噴附離子化空氣A2,而將保護膠帶T2所帶有的靜電去除。因此,可以既抑制從工作夾台60的保持面63分開的保護膠帶T2帶電之情形,並且一邊將保護膠帶T2所帶有的靜電去除一邊將晶圓W從保持面63搬出。藉此,已從保持面63分開的保護膠帶T2難以帶有靜電。因此,可以抑制形成於晶圓W的器件的品質的降低。In this way, even in the grinding device 2, the area of the separated portion separated from the holding surface 63 in the lower surface of the protective tape T2 is gradually increased, and the ion generator 51 is sprayed on this portion. The air A2 is ionized to remove the static electricity contained in the protective tape T2. Therefore, it is possible to unload the wafer W from the holding surface 63 while removing the static electricity attached to the protective tape T2 while suppressing the charge of the protective tape T2 separated from the holding surface 63 of the chuck 60 . Thereby, the protective tape T2 separated from the holding surface 63 is less likely to be charged with static electricity. Therefore, it is possible to suppress deterioration in the quality of devices formed on the wafer W.

再者,磨削裝置2具備有1個離子產生器51。取而代之,磨削裝置2亦可具備複數個離子產生器51。Furthermore, the grinding device 2 is provided with one ion generator 51 . Alternatively, the grinding device 2 may be provided with a plurality of ion generators 51 .

又,在本實施形態中,傾斜變更組件85是構成為使搬送墊72的吸附面73傾斜。傾斜變更組件只要是可以變更搬送墊72的吸附面73與工作夾台60的保持面63的相對的傾斜度之組件即可,並不受限於此。例如,磨削裝置2亦可具備變更(調整)工作夾台60的保持面63之傾斜度的傾斜變更組件,來取代此傾斜變更組件85。這種傾斜變更組件已揭示於例如日本專利特開2013-119123號公報中。Furthermore, in this embodiment, the inclination changing unit 85 is configured to incline the suction surface 73 of the transfer pad 72 . The inclination changing unit is not limited as long as it can change the relative inclination of the suction surface 73 of the transfer pad 72 and the holding surface 63 of the work chuck 60 . For example, the grinding device 2 may be provided with an inclination changing unit that changes (adjusts) the inclination of the holding surface 63 of the work chuck 60 instead of the inclination changing unit 85 . Such a tilt changing unit is disclosed in, for example, Japanese Patent Application Laid-Open No. 2013-119123.

在此構成中,傾斜變更組件是讓保持有晶圓W的工作夾台60的保持面63從相對於吸附保持了晶圓W的搬送墊72的吸附面73平行的狀態逐漸地傾斜。在此構成中,也可以將晶圓W的保護膠帶T2的下表面中的從保持面63分開的分開部分的面積逐漸地變大,且可以讓離子產生器51對此部分噴附離子化空氣。In this configuration, the tilt changing unit gradually tilts the holding surface 63 of the chuck 60 holding the wafer W from being parallel to the suction surface 73 of the transfer pad 72 that suction-holds the wafer W. In this configuration, the area of the separated portion separated from the holding surface 63 in the lower surface of the protective tape T2 of the wafer W may be gradually increased, and the ion generator 51 may spray ionized air to this portion. .

1:切割裝置 2:磨削裝置 10:支撐台 12:殼體 14:控制部 16:片匣載台 17:推拉組件 171:推拉臂 172:推拉臂移動機構 18:暫置組件 20:工作夾台 21:移動板 22:夾具 23:保持面 24:旋轉洗淨單元 27:旋轉工作台 28:旋轉保持面 30:搬送組件 31:框架保持部 32:保持部 33:框架保持部移動機構 35:框架保持部升降機構 36,91:吸引閥 37,92:吸引源 40:觸控面板 41:切割機構 42:主軸 43:切割刀片 51:離子產生器 53:送風口 55:處理組件 57:控制部 60:工作夾台 63:保持面 71:搬送機構 72:搬送墊 73:吸附面 74:搬送臂 74a:上表面 75:升降組件 76:連結部 77:貫通孔 81:擴徑部 83:彈簧 85:傾斜變更組件 86:楔部 A1,A2:離子化空氣 C:防水蓋 D1,D2:距離 F:環形框架 L:分割預定線 T1:切割膠帶 T2:保護膠帶 W:晶圓 Wa:正面 Wb:背面 W1:工件組 X,Y,+X,-X,+Y,-Y,+Z,-Z:方向1: Cutting device 2:Grinding device 10: Support platform 12: Shell 14:Control Department 16:Cassette carrier 17:Push-pull components 171: Push-pull arm 172:Push-pull arm moving mechanism 18: Temporary component 20:Work clamp table 21:Mobile board 22: Fixture 23:Keep the surface 24: Rotary cleaning unit 27: Rotary table 28: Rotation retaining surface 30:Transporting components 31: Frame holding part 32:Maintenance Department 33: Frame holding part moving mechanism 35: Frame holding part lifting mechanism 36,91:Suction valve 37,92: Source of attraction 40:Touch panel 41: Cutting mechanism 42:Spindle 43:Cutting blade 51:Ion generator 53:Air supply outlet 55: Processing components 57:Control Department 60:Work clamp 63:Keep the surface 71:Transportation mechanism 72:Transfer pad 73: Adsorption surface 74:Conveying arm 74a: Upper surface 75: Lifting components 76:Connection Department 77:Through hole 81: Expanded diameter part 83:Spring 85: Tilt change component 86: Wedge A1,A2: ionized air C: Waterproof cover D1, D2: distance F: ring frame L: dividing line T1: cutting tape T2: Protective tape W:wafer Wa:front Wb: back W1: workpiece group X,Y,+X,-X,+Y,-Y,+Z,-Z: direction

圖1是本實施形態之加工裝置的立體圖。 圖2是顯示切割機構的說明圖。 圖3是顯示離子產生器的構成的立體圖。 圖4是顯示正在將搬送組件配置在已保持於工作夾台的保持面之工件組上之狀態的說明圖。 圖5是顯示工件組的環形框架已被搬送組件的保持部所保持之狀態的說明圖。 圖6是顯示工件組的環形框架已被搬送組件的保持部舉起之狀態的說明圖。 圖7是顯示工件組中的切割膠帶的下表面之外周部分已從保持面分開之狀態的說明圖。 圖8是顯示切割膠帶的下表面已從工作夾台的保持面分開到預定的距離之狀態的說明圖。 圖9是顯示磨削裝置之構成的方塊圖。 圖10是顯示正在將搬送組件配置在已保持於工作夾台的保持面之晶圓上之狀態的說明圖。 圖11是顯示晶圓的保護膠帶的下表面的一部分正在從工作夾台的保持面分開之狀態的說明圖。 圖12是顯示保護膠帶的下表面已從工作夾台的保持面分開到預定的距離之狀態的說明圖。Fig. 1 is a perspective view of the processing device of this embodiment. Fig. 2 is an explanatory diagram showing a cutting mechanism. FIG. 3 is a perspective view showing the structure of the ion generator. FIG. 4 is an explanatory diagram showing a state in which the transfer unit is being arranged on the workpiece group held on the holding surface of the work chuck. FIG. 5 is an explanatory diagram showing a state in which the ring frame of the workpiece group is held by the holding portion of the transport unit. 6 is an explanatory diagram showing a state in which the ring frame of the workpiece group is lifted up by the holding portion of the transport unit. 7 is an explanatory diagram showing a state in which the outer peripheral portion of the lower surface of the dicing tape in the workpiece group has been separated from the holding surface. 8 is an explanatory diagram showing a state in which the lower surface of the cutting tape is separated from the holding surface of the work chuck by a predetermined distance. Fig. 9 is a block diagram showing the structure of the grinding device. FIG. 10 is an explanatory diagram showing a state in which the transfer unit is placed on the wafer held on the holding surface of the chuck. FIG. 11 is an explanatory diagram showing a state where a part of the lower surface of the protective tape of the wafer is being separated from the holding surface of the chuck. 12 is an explanatory diagram showing a state in which the lower surface of the protective tape is separated from the holding surface of the work chuck by a predetermined distance.

20:工作夾台 20:Work clamp table

22:夾具 22: Fixture

23:保持面 23:Keep the surface

31:框架保持部 31: Frame holding part

32:保持部 32:Maintenance Department

35:框架保持部升降機構 35: Frame holding part lifting mechanism

36:吸引閥 36:Suction valve

37:吸引源 37: source of attraction

51:離子產生器 51:Ion generator

A1:離子化空氣 A1: Ionized air

F:環形框架 F: ring frame

T1:切割膠帶 T1: cutting tape

W:晶圓 W:wafer

W1:工件組 W1: workpiece group

X,+Y,-Y,+Z,-Z:方向 X,+Y,-Y,+Z,-Z: direction

Claims (2)

一種處理裝置,具備: 保持組件,具有保持工件組的保持面,前述工件組是將切割膠帶貼附於環形框架與已配置在該環形框架的開口之被加工物來一體化之工件組,且前述保持面是隔著該切割膠帶來保持前述工件組; 處理組件,一邊對被加工物供給水一邊處理該被加工物,其中前述被加工物是已保持於該保持面之該工件組的被加工物; 升降組件,使具備有至少3個保持部的框架保持部在垂直於該保持面的方向上移動,且前述保持部是保持已保持於該保持面之該工件組的該環形框架;及 離子產生器,對該切割膠帶的下表面噴附離子化空氣,而將該切割膠帶所帶有的靜電去除, 又,該升降組件是構成為:使保持該工件組的該環形框架之該框架保持部上升,以讓該工件組的該切割膠帶的下表面從外周部分開始朝向中央逐漸地從該保持面分開, 該離子產生器是構成為:朝該切割膠帶的下表面中的已從該保持面分開的部分持續噴附離子化空氣,直到該切割膠帶的下表面全部從該保持面分開並進一步讓該切割膠帶的下表面從該保持面分開預定的距離為止, 且一邊去除該切割膠帶所帶有的靜電一邊將被加工物從該保持面搬出。A processing device having: The holding assembly has a holding surface that holds a workpiece group that is integrated with a workpiece arranged in an opening of the annular frame by attaching a cutting tape to the annular frame, and the holding surface is separated by The cutting tape to hold the aforementioned workpiece set; a processing component that processes the workpiece while supplying water to the workpiece, wherein the workpiece is a workpiece of the workpiece group held on the holding surface; The lifting assembly moves a frame holding part having at least three holding parts in a direction perpendicular to the holding surface, and the holding part is the annular frame holding the workpiece group held on the holding surface; and The ion generator sprays ionized air on the lower surface of the cutting tape to remove the static electricity carried by the cutting tape. Furthermore, the lifting assembly is configured to raise the frame holding portion of the annular frame holding the workpiece group so that the lower surface of the cutting tape of the workpiece group gradually separates from the holding surface starting from the outer peripheral portion toward the center. , The ion generator is configured to continue spraying ionized air toward the part of the lower surface of the cutting tape that has been separated from the holding surface until the lower surface of the cutting tape is completely separated from the holding surface and further allows the cutting until the lower surface of the tape is separated from the holding surface by a predetermined distance, The workpiece is removed from the holding surface while removing static electricity from the dicing tape. 一種處理裝置,具備: 保持組件,具有保持面,前述保持面將於其中一面具有保護構件的被加工物隔著該保護構件來保持; 處理組件,處理被該保持面所保持的被加工物; 升降組件,使具有吸附面的搬送墊在垂直於該保持面的方向上移動,前述吸附面是吸附保持其中一面已被該保持面所保持的被加工物的另一面;及 離子產生器,對該保護構件的下表面噴附離子化空氣,而將該保護構件所帶有的靜電去除, 又,前述處理裝置更具備變更該搬送墊的該吸附面與該保持面之相對的傾斜度的傾斜變更組件, 該傾斜變更組件是構成為:將吸附保持了被該保持面所保持的被加工物之該搬送墊的該吸附面與該保持面之相對的傾斜度,從該吸附面與該保持面互相平行的狀態逐漸地變大,藉此讓該被加工物的該保護構件的下表面中的從該保持面分開的分開部分之面積逐漸地變大, 該離子產生器是構成為:朝該保護構件的下表面中的從該保持面分開的分開部分持續噴附離子化空氣,直到該保護構件的下表面全部從該保持面分開並進一步讓該保護構件的下表面從該保持面分開預定的距離為止, 且一邊去除該保護構件所帶有的靜電一邊將被加工物從該保持面搬出。A processing device having: A holding component having a holding surface that holds a workpiece having a protective member on one side across the protective member; The processing component processes the workpiece held by the holding surface; The lifting assembly moves the conveying pad having an adsorption surface in a direction perpendicular to the holding surface. The adsorption surface adsorbs and holds the other side of the workpiece, one side of which is held by the holding surface; and The ion generator sprays ionized air on the lower surface of the protective member to remove static electricity carried by the protective member. Furthermore, the aforementioned processing device further includes an inclination changing component for changing the relative inclination of the suction surface and the holding surface of the transfer pad, The inclination changing component is configured to adjust the relative inclination of the adsorption surface and the holding surface of the conveying pad that adsorbs and holds the workpiece held by the holding surface so that the adsorption surface and the holding surface are parallel to each other. The state gradually becomes larger, whereby the area of the separated portion separated from the holding surface in the lower surface of the protective member of the workpiece gradually becomes larger, The ion generator is configured to continuously spray ionized air toward the separated portion of the lower surface of the protective member that is separated from the holding surface until the lower surface of the protective member is completely separated from the holding surface and further allows the protection until the lower surface of the member is separated from the holding surface by a predetermined distance, And the workpiece is carried out from the holding surface while removing the static electricity carried by the protective member.
TW109119551A 2019-07-02 2020-06-10 processing device TWI826697B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019123613A JP7265430B2 (en) 2019-07-02 2019-07-02 processing equipment
JP2019-123613 2019-07-02

Publications (2)

Publication Number Publication Date
TW202105580A TW202105580A (en) 2021-02-01
TWI826697B true TWI826697B (en) 2023-12-21

Family

ID=73919397

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109119551A TWI826697B (en) 2019-07-02 2020-06-10 processing device

Country Status (4)

Country Link
JP (1) JP7265430B2 (en)
KR (1) KR20210003673A (en)
CN (1) CN112185874A (en)
TW (1) TWI826697B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115547895B (en) * 2022-11-24 2023-03-10 深圳新控半导体技术有限公司 Chip pasting tool

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5254201A (en) * 1989-08-30 1993-10-19 Nitto Denko Corporation Method of stripping off wafer-protective sheet
JP2002066865A (en) * 2000-09-01 2002-03-05 Disco Abrasive Syst Ltd Cutting device
US20130334713A1 (en) * 2011-12-22 2013-12-19 Dingying D. Xu Electrostatic discharge compliant patterned adhesive tape
TWI423321B (en) * 2009-08-31 2014-01-11 Nitto Denko Corp Method for peeling and removing dicing surface protection tape from diced body
TW201918441A (en) * 2017-08-10 2019-05-16 日商東京威力科創股份有限公司 Substrate processing method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3163973B2 (en) * 1996-03-26 2001-05-08 日本電気株式会社 Semiconductor wafer chuck device and semiconductor wafer peeling method
JP4761088B1 (en) 2010-03-29 2011-08-31 株式会社東京精密 Dicing apparatus and dicing method
JP5554661B2 (en) 2010-08-27 2014-07-23 株式会社ディスコ Dicing machine
JP6076063B2 (en) 2012-12-11 2017-02-08 株式会社ディスコ Processing equipment
JP6305750B2 (en) 2013-12-12 2018-04-04 株式会社ディスコ Processing machine with static eliminator

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5254201A (en) * 1989-08-30 1993-10-19 Nitto Denko Corporation Method of stripping off wafer-protective sheet
JP2002066865A (en) * 2000-09-01 2002-03-05 Disco Abrasive Syst Ltd Cutting device
TWI423321B (en) * 2009-08-31 2014-01-11 Nitto Denko Corp Method for peeling and removing dicing surface protection tape from diced body
US20130334713A1 (en) * 2011-12-22 2013-12-19 Dingying D. Xu Electrostatic discharge compliant patterned adhesive tape
TW201918441A (en) * 2017-08-10 2019-05-16 日商東京威力科創股份有限公司 Substrate processing method

Also Published As

Publication number Publication date
CN112185874A (en) 2021-01-05
KR20210003673A (en) 2021-01-12
JP7265430B2 (en) 2023-04-26
JP2021009946A (en) 2021-01-28
TW202105580A (en) 2021-02-01

Similar Documents

Publication Publication Date Title
CN107026109B (en) Substrate cleaning apparatus and method, substrate processing apparatus and method
JP6076063B2 (en) Processing equipment
JP5554661B2 (en) Dicing machine
KR102051261B1 (en) Substrate cleaning device, substrate processing apparatus, substrate cleaning method and substrate processing method
TWI830833B (en) cutting device
TW201923872A (en) Polishing apparutus
TWI826697B (en) processing device
CN111386598B (en) Substrate conveying device, substrate processing system, substrate processing method and computer storage medium
JP5192999B2 (en) Ionized air supply program
JP2010123858A (en) Method and device for spinner type washing
JP7045212B2 (en) Grinding device
JP7071818B2 (en) Board processing system
JPWO2019151041A1 (en) Board processing system, board processing method and computer storage medium
CN111566784A (en) Cleaning device, cleaning method, and computer storage medium
JP6301728B2 (en) Transport device
JP2014008597A (en) Grinding apparatus
KR20230003055A (en) Exchange device and exchange method
JP2009076773A (en) Chuck table mechanism
JP6983311B2 (en) Board processing system and board processing method
JP2015135888A (en) Cutting device
JP2024021225A (en) Processor
JP2022029691A (en) Cleaning mechanism and processing device
JP2024026950A (en) Grinding device
TW202205504A (en) Substrate processing device and substrate inverting method
CN116135458A (en) Processing device and processing method