TWI825705B - Protection tape and manufacturing method of semiconductor device - Google Patents

Abstract

A protection tape includes a first substrate layer, an adhesive layer and a shrinkage layer. The shrinkage layer is located between the first substrate layer and the adhesive layer. The thermal expansion coefficient of the shrinkage layer at 180℃ is larger than or equal to 100 µm/m℃ and less than 400 µm/m℃, and the hardness of the shrinkage layer is greater than the Shore 30A at 23℃.

Description

Protective tape and method of manufacturing semiconductor device

The present invention relates to a protective tape, and in particular to a protective tape including a shrink layer and a manufacturing method of a semiconductor device using the protective tape.

Currently, semiconductor materials are widely used in many electronic devices, such as microelectromechanical systems, complementary metal oxide semiconductors, three-dimensional integrated circuits (3DIC), and memory chips. , Logic chip, Power chip, Radio Frequency chip, diode, interposer, etc. With the advancement of technology, semiconductor devices continue to develop in the directions of being light, thin, compact, high-performance, and energy-saving.

Fan-Out Wafer Level Packaging (FOWLP) is a technology that can effectively increase the volume density of semiconductor devices. In the general fan-out wafer packaging process, rewiring is deposited on a glass carrier. structure, and then the chip is packaged on the aforementioned rewiring structure. However, rewiring the junction The thermal expansion coefficient of the structure and the glass carrier are different. Therefore, after the rewiring structure is deposited, the glass carrier is prone to warping and affects the yield of subsequent processes.

The invention provides a protective tape that can improve the warping problem of the base.

The present invention provides a method for manufacturing a semiconductor device, which can improve the warping problem of a substrate after depositing a conductive layer and an insulating layer.

At least one embodiment of the present invention provides a protective tape. The protective tape includes a first base material layer, an adhesive layer and a shrink layer. The shrink layer is located between the first base material layer and the adhesive layer. The thermal expansion coefficient of the shrink layer at 180°C is greater than or equal to 100 μm/m°C and less than 400 μm/m°C, and the hardness of the shrink layer at 23°C is greater than Shore hardness 30A.

In some embodiments, the shrink layer has a flexural modulus at 30°C of 1.45 MPa and a flexural modulus at 180°C of 0.19 MPa.

In some embodiments, the first substrate layer is more flexible than the shrink layer.

In some embodiments, the material of the shrink layer includes acrylic resin, polyurethane resin, epoxy resin, polysiloxane resin or a combination of the above materials.

In some embodiments, the protective tape further includes a second substrate layer. The shrink layer is located between the first base material layer and the second base material layer, and the second base material layer is located between the shrink layer and the adhesive layer. The thermal expansion coefficient of the shrink layer at 180°C is greater than the thermal expansion coefficient of the first base material layer at 180°C and the thermal expansion coefficient of the second base material layer at 180°C.

In some embodiments, the material of the first substrate layer is the same as the material of the second substrate layer. Materials include polyethylene terephthalate, polyurethane, polyether ester, polyethylene naphthalate, polyimide, polyetherimide, polyether ether ketone or a combination of the above materials.

In some embodiments, the shrink layer is composed of raw materials, including oligomers, monomers, and initiators, wherein the oligomers include epoxy acrylate, polyester acrylate, polyurethane acrylate, polyether acrylate, or other In combination, the monomers include monofunctional monomers, difunctional monomers, multifunctional monomers or combinations thereof, and the initiators include free radical initiators or cationic initiators.

In some embodiments, in the raw materials of the shrink layer, the weight ratio of oligomers is greater than or equal to 40wt%, the weight ratio of monomers is 20wt% to 50wt%, and the weight ratio of the starter is less than or equal to 10wt%.

In some embodiments, the first substrate layer has a thickness of 25 microns to 200 microns, the shrink layer has a thickness of 25 microns to 500 microns, and the adhesive layer has a thickness of 5 microns to 100 microns.

At least one embodiment of the present invention provides a method for manufacturing a semiconductor device, which includes affixing a protective tape to a first surface of a substrate, depositing at least a first conductive layer and at least one conductive layer on a second surface of the substrate relative to the first surface. The first insulating layer and the first conductive layer and the first insulating layer are lifted from the substrate. The protective tape includes a first base material layer, an adhesive layer and a shrink layer. The shrink layer is located between the first base material layer and the adhesive layer. The thermal expansion coefficient of the shrink layer at 180°C is greater than or equal to 100 μm/m°C and less than 400 μm/m°C, and the hardness of the shrink layer at 23°C is greater than Shore hardness 30A.

In some embodiments, the method of manufacturing a semiconductor device further includes: removing the protective tape from the substrate; and applying another protective tape on the first side of the substrate, wherein The thermal expansion coefficient of the other shrinkage layer of the other protective tape at 180°C is greater than the thermal expansion coefficient of the shrinkage layer of the protective tape at 180°C; at least one second second conductive layer is deposited on the first conductive layer and the first insulating layer. a conductive layer and at least a second insulating layer; remove the other protective tape from the base; take the first conductive layer, the first insulating layer, the second conductive layer and the second insulating layer from the base.

In some embodiments, the manufacturing method of a semiconductor device further includes: sticking another protective tape on the first base material layer of the protective tape; depositing at least one second layer on the first conductive layer and the first insulating layer. The conductive layer and at least one second insulating layer; removing the other protective tape and the protective tape from the base; taking the first conductive layer, the first insulating layer, the second conductive layer and the second insulating layer from the base .

In some embodiments, the adhesiveness of the other adhesive layer of the other protective tape is less than the adhesiveness of the adhesive layer of the protective tape.

In some embodiments, after applying the protective tape to the first side of the substrate, the protective tape is cut.

In some embodiments, the method of manufacturing a semiconductor device further includes: after affixing the protective tape to the first surface of the substrate, placing the protective tape on a suction cup.

In some embodiments, the manufacturing method of the semiconductor device further includes: before depositing the first conductive layer and the first insulating layer, forming a release layer on the second side of the substrate, and depositing the first conductive layer and the first insulating layer on On the release layer.

In some embodiments, the method of manufacturing a semiconductor device further includes: irradiating the release layer with a laser to separate the first conductive layer and the first insulating layer from the substrate.

1:Semiconductor device

10,10a,10a’: protective tape

12A, 12A’: first base material layer

12B, 12B’: second base material layer

14,14’:shrink layer

16,16’: Adhesive layer

20: Release layer

100:Base

100a: Side 1

100b: Second side

120: First conductive layer

130: First insulation layer

140: Second conductive layer

142:Micro bumps

150: Second insulation layer

210:Chip

220:pad

230: Bottom filling material

240:Packaging material

250:Connection terminal

CK: Suction cup

CL: cutting line

F, F’: contraction force

RDL: rewiring structure

T1, T2, T3, T4: Thickness

Figure 1 is a schematic cross-sectional view of a protective tape according to an embodiment of the present invention.

Figure 2 is a schematic cross-sectional view of a protective tape according to an embodiment of the present invention.

3A to 3I are schematic cross-sectional views of a method for manufacturing a semiconductor device according to an embodiment of the present invention.

4A to 4E are schematic cross-sectional views of a method for manufacturing a semiconductor device according to an embodiment of the present invention.

Figure 1 is a schematic cross-sectional view of a protective tape according to an embodiment of the present invention.

Please refer to FIG. 1 , the protective tape 10 includes a first base material layer 12A, an adhesive layer 16 and a shrink layer 14 . The shrink layer 14 is located between the first base material layer 12A and the adhesive layer 16 . In some embodiments, before using the protective tape 10 , the protective tape 10 is disposed on the release layer 20 , with the adhesive layer 16 facing the release layer 20 . When the protective tape 10 is to be used, the protective tape 10 is torn off from the release layer 20 , and then the protective tape 10 is attached to another position.

In some embodiments, the material of the first substrate layer 12A includes polyterephthalene. Polyethylene terephthalate (PET), polyurethane (PU), polyethersulfones (PES), polyethylene naphthalate (PEN), polyimide (PI) ), polyetherimide (PEI), polyetheretherketone (PEEK), a combination of the above materials or other suitable materials. In the embodiment where the first base material layer 12A is polyurethane, the first base material layer 12A may be thermoplastic polyurethane, but the present invention is not limited thereto. In the embodiment where the first base material layer 12A is polyimide, the first base material layer 12A can be made of transparent polyimide, but the present invention is not limited thereto. In some embodiments, the first base material layer 12A is, for example, a material layer that can be rolled, and the manufacturing method of the first base material layer 12A includes, for example, extrusion molding, coating, or other suitable processes. The thickness T1 of the first base material layer 12A is, for example, 25 microns to 200 microns.

The shrink layer 14 is located on the first base material layer 12A. In this embodiment, the protective tape 10 has a high thermal expansion coefficient (eg, greater than or equal to 100 μm/m°C and less than 400 μm/m°C) at high temperature (eg, 180°C). For example, the thermal expansion coefficient of the shrink layer 14 at 180°C is 100 μm/m°C to 150 μm/m°C, 150 μm/m°C to 200 μm/m°C, 200 μm/m°C to 250 μm/m°C, and 250 μm/m°C to 300 μm /m℃, 300μm/m℃ to 350μm/m℃ or above 350μm/m℃. In some embodiments, the thermal expansion coefficient of the shrink layer 14 at 180°C is greater than the thermal expansion coefficient of the first substrate layer 12A at 180°C. In some embodiments, the shrink layer 14 has a flexural modulus at 30°C of 1.45 MPa and a flexural modulus at 180°C of 0.19 MPa.

In some embodiments, the first substrate layer 12A is more flexible than the shrink layer 14% flexibility. In other words, the first base material layer 12A is made of a relatively flexible material, while the shrinkage layer 14 is made of a relatively rigid material. In some embodiments, the hardness of the shrinkage layer 14 at 23 degrees Celsius is greater than Shore hardness 30A, such as Shore hardness 30A to 50A, 50A to 75A, or 75A to 100A, thereby preventing the substrate from warping after depositing the rewiring structure. Qu problem.

In some embodiments, the material of the shrink layer 14 includes acrylic resin, polyurethane resin, epoxy resin, polysiloxane resin, a combination of the above materials or other suitable polymer materials.

The thickness T2 of the shrink layer 14 is, for example, 25 microns to 500 microns. In some embodiments, the shrink layer 14 is directly formed on the first substrate layer 12A by coating, printing, hot melt extrusion, or other suitable processes.

In some embodiments, the shrink layer 14 is composed of raw materials, including oligomers, monomers, and initiators.

The oligomers in the raw materials that make up the shrink layer 14 constitute the main body of the shrink layer 14, and the oligomers determine the main properties of the cured shrink layer 14. In some embodiments, the weight ratio of the oligomer in the raw material of the shrink layer 14 is greater than or equal to 40 wt%, such as 40 to 80 wt%. In some embodiments, the oligomers include epoxy acrylates, polyester acrylates, urethane acrylates, polyether acrylates, or combinations thereof. Table 1 compares the properties of shrink layer 14 composed of different oligomers.

Table 1

It can be seen from Table 1 that in order to obtain the shrink layer 14 with relatively hard hardness, the oligomer is preferably epoxy acrylate and/or polyester acrylate. For example, one or more epoxy acrylates or polyester acrylates are selected as the oligomers, and the weight average molecular weight of the oligomers is 1,000 to 100,000, and the oligomers in the raw materials of the shrink layer 14 are The weight ratio is greater than or equal to 40wt%, 50wt%, 60wt% or 70wt%. Based on the above, the shrink layer 14 has the advantages of high rigidity, high tensile strength and wear resistance.

It should be noted that Table 1 provides the effects of different oligomers on the properties of the shrink layer 14, but it is not intended to limit this application. In fact, the properties of the shrink layer 14 may also change due to other factors.

The monomers in the raw materials that make up the shrink layer 14 are suitable for adjusting the viscosity and will participate in the polymerization reaction. The amount of monomer in the raw material will also affect the performance of the shrink layer 14 after curing. In some embodiments, the weight ratio of the monomer in the raw material of the shrink layer 14 is 20 wt% to 50 wt%. In some embodiments, monomers include monofunctional monomers, Difunctional monomers, multifunctional monomers or combinations thereof.

In some embodiments, the monofunctional monomer is, for example, Isodecyl acrylate (IDA) or Tetrahydrofuryl acrylate (THFA), wherein the chemical structures of Isodecyl acrylate and Tetrahydrofuryl acrylate are as follows respectively It is shown in Chemical Formula 1 and Chemical Formula 2.

In some embodiments, the bifunctional monomer is, for example, hexanediol diacrylate (HDDA), wherein the chemical structure of hexanediol diacrylate is as follows Chemical Formula 3.

In some embodiments, the multifunctional monomer is, for example, trimethylolpropane triacrylate (TMPTA) or dipentaerythritol hexaacrylate (DPHA), wherein The chemical structures of trimethylolpropane triacrylate and dipentaerythritol hexaacrylate are as follows Chemical Formula 4 and Chemical Formula 5 respectively.

Table 2 compares the effect of increasing the number of functional groups of the monomer on the properties of the formed shrink layer 14 and the effect of increasing the chain length of the monomer on the properties of the formed shrink layer 14 .

It can be seen from Table 2 that in order to obtain the shrinkage layer 14 with relatively hard hardness, the monomer is preferably a bifunctional and/or multifunctional monomer. For example, one or more difunctional monomers are selected together with multifunctional monomers, and in the raw materials of the shrink layer 14, the weight ratio of the monomers is greater than 20wt%, greater than 30wt%, or greater than 40wt %, thereby controlling the formula and improving the wettability of the substrate. In addition, after curing (such as UV curing), the bridging density of the structure can be increased, and rigidity can be imparted to the material, so that the hardness of the shrinkage layer 14 after curing is increased.

It should be noted that Table 2 provides the effects of adjusting monomers on the properties of the shrink layer 14, but it is not used to limit this application. In fact, the properties of the shrink layer 14 may also change due to other factors.

The initiator in the raw materials that make up the shrink layer 14 is suitable for initiating polymerization and bridging reactions. For example, one or more initiators are used to cause polymerization and bridging reactions of monomers and oligomers. In some embodiments, the initiator includes a free radical initiator or a cationic initiator. In some embodiments, in the raw materials of the shrink layer 14, the weight ratio of the starter is less than or equal to 10wt%, such as less than or equal to 9wt%, 8wt%, 7wt%, 6wt%, 5wt%, 4wt%, 3wt%, 2wt% or 1wt%. In some embodiments, the initiator is a photoinitiator, and it is suitable for absorbing ultraviolet light to initiate polymerization reaction, but the present invention is not limited thereto. In other embodiments, shrink layer 14 may be a thermoset material.

In some embodiments, the polyester acrylate resin uses a free radical photoinitiator The starting agent, such as 1-hydroxycyclohexyl phenyl ketone, has the following chemical structure: Chemical Formula 6.

In some embodiments, the epoxy acrylate resin uses a cationic photoinitiator, such as diphenyl(4-phenylthio)phenyl sulfonium hexafluoroantimonate and /or (Thiodi-4,1-phenylene)bis(diphenylsulfonium)dihexafluoroatimonate), whose chemical structures are as follows: Chemical formula 7 and chemical formula 8.

In some embodiments, the raw materials making up the shrink layer 14 also include additives. Additives are, for example, surfactants, stabilizers, dyes, solvents or other materials. exist In some embodiments, in the raw materials of the shrink layer 14, the weight ratio of the additive is 0wt% to 10wt%, such as 9wt%, 8wt%, 7wt%, 6wt%, 5wt%, 4wt%, 3wt%, 2wt% or 1wt%.

In one embodiment, the raw materials of the shrink layer 14 include oligomers, monomers, photoinitiators and additives, wherein the weight ratio of oligomers is greater than 50wt%, the weight ratio of monomers is 20wt% to 40wt%, and the weight ratio of light The weight ratio of the starter is less than 10wt%, and the weight ratio of the additive is less than 5wt%. In the foregoing embodiments, the oligomers include Bisphenol A Epoxy Diacrylate (Bisphenol A Epoxy Diacrylate) and Polyester diacrylate (Polyester diacrylate), and the monomers include Tetrahydrofurfuryl acrylate (THFA) and hexane Hexanediol diacrylate (HDDA), photoinitiator includes 1-hydroxycyclohexyl phenyl ketone and phenyl bis(2,4,6-trimethylbenzoyl) ) phosphine oxide (phenyl bis(2,4,6-trimethylbenzoyl)-phosphine oxide), and the additive is γ-mercaptopropyltrimethoxysilane.

The adhesive layer 16 is located on the shrink layer 14 . In some embodiments, the adhesiveness of adhesive layer 16 is greater than the adhesiveness of shrink layer 14 . The adhesive layer 16 is, for example, pressure-sensitive adhesive. In some embodiments, the material of the adhesive layer 16 includes acrylic resin, polyurethane resin, polysiloxane resin, a combination of the above materials, or other suitable polymer materials.

In some embodiments, the adhesive layer 16 includes a photosensitive material, and the adhesive layer 16 will reduce the adhesive force after being illuminated by light (such as ultraviolet light), so that the protective tape 10 can be deglued through the light. In some embodiments, the adhesive layer 16 includes a thermoset material, and the adhesive layer 16 When the layer 16 is heated, the adhesive force will be reduced, so that the protective tape 10 can be deglued through heating. In some embodiments, the adhesive layer 16 includes a pyrolyzable material, and cooling the adhesive layer 16 below the glass transition temperature will reduce the adhesive force, allowing the protective tape 10 to pass through the pyrolysis material.

The thickness T3 of the adhesive layer 16 is, for example, 5 microns to 100 microns. In some embodiments, the adhesive layer 16 is formed directly on the shrink layer 14 by coating, printing, or other suitable processes.

The adhesive layer 16 is suitable for adhering the protective tape 10 to the object to be adhered (such as a substrate). The adhesive layer 16 is bonded to other materials by physical adsorption, diffusion, electrostatic adsorption, mechanical interlocking, and chemical bonding. Physical adsorption may include, for example, van der Waals forces or hydrogen bonding adsorption. Diffusion is, for example, a mutual diffusion phenomenon occurring at the interface between the adhesive layer 16 and the adhered object when the temperature is higher than the glass transition temperature of the adhesive layer 16 . Mechanical interlocking involves, for example, physical treatment or chemical treatment on the surface of the object to be attached, so as to roughen the surface of the object to be attached, so that the adhesive layer 16 can engage with the rough surface of the object to be attached.

In order to make the adhesive layer 16 better adhere to the object to be adhered, the rigidity of the adhesive layer 16 should not be too high, so that the adhesive layer 16 can fill in all the small gaps on the surface of the object to be adhered, so as to improve the bonding between the adhesive layer 16 and the object to be adhered. The contact area between surfaces of an object.

In this embodiment, the bridging density of the shrink layer 14 is greater than the bridging density of the adhesive layer 16 , the weight average molecular weight of the shrink layer 14 is greater than the weight average molecular weight of the adhesive layer 16 , and the glass transition temperature of the shrink layer 14 is greater than the glass transition of the adhesive layer 16 temperature.

In some embodiments, shrink layer 14 has a weight average molecular weight of from 400,000 to 800,000g/mol, and the weight average molecular weight of the adhesive layer 16 is 10,000 to 1,200,000g/mol. In some embodiments, the shrink layer 14 has a glass transition temperature greater than 20°C, and the adhesive layer 16 has a glass transition temperature less than 20°C. For example, when using a protective tape 10 that can be deglued by illumination or heating, the glass transition temperature of the adhesive layer 16 is less than -20°C, such as -20°C to -60°C. When the adhesive tape 10 is used, the glass transition temperature of the adhesive layer 16 is less than 20°C, for example -10°C to 10°C.

The release layer 20 can be any release material. For example, the release layer 20 is made of polyethylene terephthalate (PET), polyolefins (PO) or release paper. The thickness of the release layer 20 is, for example, 25 microns to 175 microns.

Figure 2 is a schematic cross-sectional view of a protective tape according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 2 follows the component numbers and part of the content of the embodiment of FIG. 1 , where the same or similar numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be described again here.

The main difference between the protective tape 10a of FIG. 2 and the protective tape 10 of FIG. 1 is that the protective tape 10a further includes a second base material layer 12B.

Please refer to FIG. 2 , the protective tape 10 a includes a first base material layer 12A, a second base material layer 12B, an adhesive layer 16 and a shrink layer 14 . The shrink layer 14 is located between the first base material layer 12A and the second base material layer 12B, and the second base material layer 12B is located between the shrink layer 14 and the adhesive layer 16 . In some embodiments, the second substrate layer 12B is The flexural modulus is 1.4GPa, and the flexural modulus at 180°C is 0.18GPa.

In some embodiments, the materials of the first substrate layer 12A and the second substrate layer 12B include polyethylene terephthalate, polyurethane, polyether ester, polyethylene naphthalate, and polyimide. , polyetherimide, polyetheretherketone, combinations of the above materials or other suitable materials. In the embodiment where the second base material layer 12B is polyurethane, the second base material layer 12B may be thermoplastic polyurethane, but the present invention is not limited thereto. In the embodiment where the second base material layer 12B is polyimide, the second base material layer 12B may be made of transparent polyimide. In some embodiments, the first base material layer 12A and the second base material layer 12B are, for example, rollable material layers, and the manufacturing methods of the first base material layer 12A and the second base material layer 12B include, for example, extrusion molding, coating. cloth or other suitable process. The thickness T1 of the first base material layer 12A and the thickness T4 of the second base material layer 12B are, for example, 25 microns to 200 microns.

The first base material layer 12A and the second base material layer 12B may include the same or different materials. In some embodiments, the thermal expansion coefficient of the second substrate layer 12B at 180°C is greater than the thermal expansion coefficient of the first substrate layer 12A at 180°C.

In some embodiments, the thermal expansion coefficient of the shrink layer 14 at 180°C is greater than the thermal expansion coefficient of the first substrate layer 12A at 180°C and the thermal expansion coefficient of the second substrate layer 12B at 180°C.

Table 3 shows the effect of changing the thickness T1 of the first base material layer 12A, the thickness T2 of the shrink layer 14 and the thickness T4 of the second base material layer 12B on the degree of warpage of the protective tape 10a. It should be noted that Table 3 shows the degree of warpage after heat treatment when the protective tape 10a is not attached to other devices. In Example 1 In Embodiment 9, the material of the first base material layer 12A is polyethylene terephthalate, the material of the shrink layer 14 is acrylic resin, and the material of the second base material layer 12B is polyethylene terephthalate. Ethylene glycol.

In Examples 1 to 4 of Table 3, the protective tape 10a tends to become more curved after the heat treatment at 150° C. as the thickness of the shrink layer 14 becomes smaller. In addition, in Embodiments 1 to 4, since the thermal expansion coefficient of the second base material layer 12B is greater than the thermal expansion coefficient of the first base material layer 12A, the protective tape 10a is easily warped toward the direction of the second base material layer 12B.

In addition, it can be known from Examples 5 to 8 of Table 3 that when the thickness of the first base material layer 12A and the second base material layer 12B is consistent with the material, the thickness of the shrink layer 14 has a significant impact on the temperature of the protective tape 10a at 200°C. The degree of warpage after heat treatment does not have much impact. In addition, in Examples 5 to 8, the protective tape 10a is warped in random directions.

In addition, in Example 9 in Table 3, after heat treatment at 150°C, although the thermal expansion coefficient of the first base material layer 12A is low, the flexural modulus of the material is large, causing the protective tape 10a to easily move toward the first base material layer 12A. direction of warping. After the heat treatment at 200°C, since the bending modulus of the first base material layer 12A becomes smaller, the overall internal stress decreases, causing the protective tape 10a to warp toward the second base material layer 12B with a larger thermal expansion coefficient. In other words, in Example 9, the warping direction of the protective tape 10a after the heat treatment at 150°C is different from the warping direction of the protective tape 10a after the heat treatment at 200°C.

Table 4 provides the thermal expansion coefficient and glass transition temperature (Tg) of the shrink layer and some second substrate layers in the MD direction (film drawing direction).

Table 5 provides the thermal expansion coefficient and glass transition temperature (Tg) of the first substrate layer, the shrink layer and some second substrate layers in the TD direction (perpendicular to the film drawing direction).

In Table 4 and Table 5, the material of the shrink layer is acrylic resin, and the material of the second base material layer is polyethylene terephthalate. In addition, in Table 5, the material of the first base material layer is polyimide with high heat resistance and thermal stability.

3A to 3I are schematic cross-sectional views of a method for manufacturing a semiconductor device according to an embodiment of the present invention. It must be noted here that the embodiments of FIGS. 3A to 3I follow the component numbers and part of the content of the embodiment of FIG. 2 , where the same or similar numbers are used to represent the same or similar elements, and references with the same technical content are omitted. instruction. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be described again here.

Referring to Figure 3A, a substrate 100 is provided. The substrate 100 is, for example, a carrier substrate whose material includes glass, semiconductor, metal or other suitable materials. The substrate 100 includes a first side 100a and a second side 100b opposite to the first side 100a. In some embodiments, substrate 100 has a thickness of 700 microns to 1100 microns.

The protective tape 10a is attached to the first side 100a of the base 100. In this embodiment, the hardness of the protective tape 10a at room temperature (for example, 23°C) is greater than Shore hardness 30A. Therefore, it helps to reduce the warping problem of the substrate 100.

In some embodiments, the area of protective tape 10a is greater than the area of first side 100a of substrate 100. After the protective tape 10a, which is larger than the substrate 100, is attached to the first surface 100a of the substrate 100, the protective tape 10a and the substrate 100 are aligned along the cutting line CL through a cutting process. Therefore, when attaching the protective tape 10a to the substrate 100 (the step shown in FIG. 3B), there is no need to accurately align the protective tape 10a and the substrate 100.

In addition, it should be noted that although this embodiment takes the protective tape 10a of FIG. 2 as an example, the present invention is not limited thereto. In other embodiments, the protective tape 10 of FIG. 1 is affixed to the first surface 100a of the substrate 100.

Please refer to Figure 3B and place the protective tape 10a on the suction cup CK. In some embodiments, the suction cup CK absorbs the first base material layer 12A of the protective tape 10a through electrostatic force, vacuum force or other means.

A release layer 102 is formed on the second surface 100b of the substrate 100. The release layer 102 is formed entirely on the second surface 100b. The release layer 102 includes, for example, organic materials. The method of forming the release layer 102 includes coating, doctoring, or other suitable processes.

Referring to FIG. 3C , at least a first conductive layer 120 and at least a first insulating layer 130 are deposited on the second surface 100b of the substrate 100 . In this embodiment, multiple layers of first conductive layers 120 and multiple layers of first insulating layers 130 are deposited on the second surface 100b of the substrate 100 . In this embodiment, the first conductive layer 120 and the first insulating layer 130 are deposited on the release layer 102 . In some embodiments, the layer of the first conductive layer 120 closest to the substrate 100 is an under-bump metallurgy (UBM) layer.

In some embodiments, the method of depositing the first conductive layer 120 includes, for example, physical vapor deposition, chemical vapor deposition, electroplating, sputtering or other suitable deposition processes, and the method of depositing the first insulating layer 130 includes, for example, physical vapor deposition. Phase deposition, chemical vapor deposition, spin coating or other suitable deposition process. In some embodiments, the shape of the first conductive layer 120 and the shape of the first insulating layer 130 are defined through a lithography process and an etching process.

In some embodiments, the process of forming the first conductive layer 120 and the first insulating layer 130 includes a high-temperature process (for example, a process with a temperature higher than 180° C.). Since the thermal expansion coefficient of the first conductive layer 120 and/or the first insulating layer 130 is higher than the thermal expansion coefficient of the substrate 100, when the substrate 100 drops from high temperature to room temperature, the second surface 100b of the substrate 100 may be affected by the first conductive layer. 120 and/or the first insulating layer 130 shrinks to produce a shrinkage force F that causes the substrate 100 to tend to warp upward.

In some embodiments, since the thermal expansion coefficient of the protective tape 10a is higher than the thermal expansion coefficient of the first conductive layer 120 and the first insulating layer 130, the shrinkage force F' generated by the shrinkage of the protective tape 10a can prevent the shrinkage force F from causing damage to the substrate. 100 warps upward, even causing the base 100 to tend to warp downward. Since the suction cup CK exerts a downward force on the substrate 100 to adsorb the substrate 100, the substrate 100 that is warped downward is more likely to be adsorbed by the suction cup CK than the substrate 100 that is warped upward. In some embodiments, the thermal expansion coefficient of the shrink layer 14 of the protective tape 10a at 180°C is greater than the thermal expansion coefficients of the first conductive layer 120 and the first insulating layer 130 at 180°C. In some embodiments, in addition to the shrink layer 14 , the thermal expansion coefficients of the first base material layer 12A and the second base material layer 12B of the protective tape 10 a at 180° C. are also greater than those of the first conductive layer 120 . and the thermal expansion coefficient of the first insulating layer 130 at 180° C., thereby further preventing the substrate 100 from warping upward.

In this embodiment, three layers of first conductive layers 120 and two layers of first insulating layers 130 are formed. After each layer of first conductive layer 120 or first insulating layer 130 is formed, the shrinkage force F gradually increases. It should be noted that this embodiment takes the formation of three first conductive layers 120 and two first insulating layers 130 as an example, but the present invention is not limited to this. The quantities of the first conductive layer 120 and the first insulating layer 130 can be adjusted according to actual requirements.

As the contraction force F increases, the substrate 100 may transition from tending to warp downward to warping upward. After the shrinkage force F reaches a certain level, in order to prevent the base 100 from warping upward and breaking away from the suction cup CK, the base 100 and the protective tape 10a are removed from the suction cup CK, and another layer is attached to the first surface 100a of the base 100. Protective tape 10a', as shown in Figures 3D to 3E.

Please refer to FIG. 3D . After the substrate 100 and the protective tape 10 a are picked up from the suction cup CK, the protective tape 10 a is removed from the substrate 100 .

Referring to Figure 3E, another protective tape 10a' is affixed to the first side 100a of the substrate 100. The protective tape 10a' includes a first base material layer 12A', a second base material layer 12B', an adhesive layer 16' and a shrink layer 14'. The protective tape 10a' has a larger thermal expansion coefficient than the protective tape 10a. In some embodiments, the thermal expansion coefficient of the shrink layer 14' of the protective tape 10a' at 180°C is greater than the thermal expansion coefficient of the shrink layer 14 of the protective tape 10a at 180°C. In some embodiments, the thermal expansion coefficient of the first base material layer 12A' and the second base material layer 12B' of the protective tape 10a' at 180°C is greater than that of the protective tape 10a'. Thermal expansion coefficients of the first base material layer 12A and the second base material layer 12B at 180°C.

In some embodiments, the original area of the protective tape 10a' is larger than the area of the substrate 100, and after the protective tape 10a' is attached to the substrate 100, the protective tape 10a' and the substrate 100 are aligned through a cutting process.

In some embodiments, by adjusting the materials or thicknesses of the first base material layer, the second base material layer and the shrinkage layer, the protective tape 10a' is easier to generate shrinkage force F' on the substrate 100 than the protective tape 10a.

In some embodiments, the hardness of the shrink layer 14' at 23 degrees Celsius is greater than Shore hardness 30A, such as Shore hardness 30A to 50A, 50A to 75A, or 75A to 100A, thereby suppressing the warping problem of the substrate 100.

After the protective tape 10a' is attached to the substrate 100, the protective tape 10a' is placed on the suction cup CK. In some embodiments, the suction cup CK absorbs the first base material layer 12A' of the protective tape 10a' through electrostatic force, vacuum force or other means.

Referring to FIG. 3E , at least one second conductive layer 140 and at least one second insulating layer 150 are deposited on the first conductive layer 120 and the first insulating layer 130 . Micro bumps 142 are formed on the outermost second conductive layer 140 .

In some embodiments, the method of depositing the second conductive layer 140 includes, for example, physical vapor deposition, chemical vapor deposition, electroplating, sputtering or other suitable deposition processes, and the method of depositing the second insulating layer 150 includes, for example, physical vapor deposition. Phase deposition, chemical vapor deposition, spin coating or other suitable deposition process. In some embodiments, the shape of the second conductive layer 140 and the shape of the second insulating layer 150 are defined through a photolithography process and an etching process.

In some embodiments, the process of forming the second conductive layer 140 and the second insulating layer 150 includes a high-temperature process (for example, a process with a temperature higher than 180° C.). Since the thermal expansion coefficient of the first conductive layer 120 , the first insulating layer 130 , the second conductive layer 140 and/or the second insulating layer 150 is higher than the thermal expansion coefficient of the substrate 100 , when the substrate 100 drops from high temperature to room temperature, the substrate 100 The second surface 100b may have a shrinkage force F due to the shrinkage of the first conductive layer 120, the first insulating layer 130, the second conductive layer 140 and/or the second insulating layer 150, causing the substrate 100 to tend to warp upward.

In some embodiments, since the thermal expansion coefficient of the protective tape 10a' is higher than the thermal expansion coefficient of the first conductive layer 120, the first insulating layer 130, the second conductive layer 140 and/or the second insulating layer 150, the protective tape 10a' The 'shrinkage force F' generated by shrinkage can prevent the base 100 from tending to warp upward due to the shrinkage force F, or even cause the base 100 to tend to warp downward. In some embodiments, the thermal expansion coefficient of the shrink layer 14' of the protective tape 10a' at 180°C is greater than that of the first conductive layer 120, the first insulating layer 130, the second conductive layer 140 and/or the second insulating layer 150 at 180°C. thermal expansion coefficient. In some embodiments, in addition to the shrink layer 14', the thermal expansion coefficients of the first base material layer 12A' and the second base material layer 12B' of the protective tape 10a' at 180°C are also greater than those of the first conductive layer 120, the first The thermal expansion coefficient of the insulating layer 130, the second conductive layer 140 and/or the second insulating layer 150 at 180° C. thereby further prevents the substrate 100 from warping upward.

It should be noted that this embodiment takes the formation of a second conductive layer 140 and a second insulating layer 150 as an example, but the invention is not limited thereto. The numbers of the second conductive layer 140 and the second insulating layer 150 can be adjusted according to actual requirements.

In this embodiment, the redistribution structure RDL on the substrate 100 includes a A conductive layer 120, a first insulating layer 130, a second conductive layer 140 and a second insulating layer 150, but the invention is not limited thereto. The redistribution structure RDL on the substrate 100 may also include other conductive layers and insulating layers.

Referring to FIG. 3F , one or more wafers 210 are bonded to the microbumps 142 . For example, the pads 220 of the chip 210 are connected to the redistribution structure RDL through the microbumps 142 .

Referring to FIG. 3G, an underfill material 230 is formed around the pads 220 and the microbumps 142 to protect the contacts between the chip 210 and the redistribution structure RDL. Then, a packaging material 240 is formed to package the chip 210 on the redistribution structure RDL. The packaging material 240 contacts the die 210 and the redistribution structure RDL.

Referring to FIG. 3H, the substrate 100 and the protective tape 10a' are picked up from the suction cup CK, and then the protective tape 10a' is removed from the substrate 100.

Referring to FIG. 3I , the wafer 210 and the first conductive layer 120 , the first insulating layer 130 , the second conductive layer 140 and the second insulating layer 150 of the redistribution structure RDL are removed from the substrate 100 . In some embodiments, the release layer 102 is irradiated with laser to separate the first conductive layer 120 and the first insulating layer 130 of the redistribution structure RDL from the substrate 100 .

Then, the connection terminals 250 are formed on the first conductive layer 120 . The connection terminals 250 are, for example, solder balls or other suitable materials. At this point, the semiconductor device 1 is substantially completed.

In this embodiment, the protective tape 10a and the protective tape 10a' are used in the process of manufacturing the semiconductor device 1, but the invention is not limited thereto. In other embodiments, more than three different protections may be used in the process of manufacturing the semiconductor device 1 tape to form more conductive layers and insulating layers on the substrate 100 .

4A to 4E are schematic cross-sectional views of a method for manufacturing a semiconductor device according to an embodiment of the present invention. It must be noted here that the embodiment of FIGS. 4A to 4E follows the component numbers and part of the content of the embodiment of FIGS. 3A to 3I , where the same or similar numbers are used to represent the same or similar elements, and the same or similar elements are omitted. Description of technical content. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be described again here.

Please refer to Figure 4A. Following the steps of Figure 3C, after the shrinkage force F reaches a certain level, in order to prevent the base 100 from warping upward and breaking away from the suction cup CK, the base 100 and the protective tape 10a are picked up from the suction cup CK, and Another protective tape 10a' is pasted on the first base material layer 12A of the protective tape 10a. Then put the protective tape 10a' on the suction cup CK. In other words, in this embodiment, after the protective tape 10a is picked up from the suction cup CK, the protective tape 10a is not removed from the substrate 100.

In some embodiments, the original area of the protective tape 10a' is larger than the area of the protective tape 10a, and after the protective tape 10a' is attached to the protective tape 10a, the protective tape 10a' and the protective tape 10a are aligned through a cutting process. Accurate.

Next, please refer to FIG. 4B , at least one second conductive layer 140 and at least one second insulating layer 150 are deposited on the first conductive layer 120 and the first insulating layer 130 . Microbumps 142 are formed on the outermost second conductive layer 140 .

In this embodiment, the thermal expansion coefficients of the protective tape 10a and the protective tape 10a' at 180°C are both greater than those of the first conductive layer 120, the first insulating layer 130, the second conductive layer 140 and/or the second insulating layer 150 at 180°C. thermal expansion coefficient. Thus, in After the second conductive layer 140 and the second insulating layer 150 are deposited, the shrinkage force F' generated by the protective tape 10a and the protective tape 10a' can prevent the substrate 100 from shrinking the force F generated by the second conductive layer 140 and the second insulating layer 150. Warping occurs.

In some embodiments, the adhesive layer 16' of the protective tape 10a' is less adhesive than the adhesive layer 16 of the protective tape 10a. Therefore, the protective tape 10a' can be prevented from tearing the protective tape 10a away from the substrate 100.

Referring to FIG. 4C , one or more wafers 210 are bonded to the microbumps 142 . For example, the pads 220 of the chip 210 are connected to the redistribution structure RDL through the microbumps 142 . An underfill material 230 is formed around the pads 220 and the microbumps 142 to protect the contacts between the chip 210 and the redistribution structure RDL. Then, a packaging material 240 is formed to package the chip 210 on the redistribution structure RDL. The packaging material 240 contacts the die 210 and the redistribution structure RDL.

Next, please refer to FIG. 4D to pick up the base 100, the protective tape 10a' and the protective tape 10a from the suction cup CK, and then remove the protective tape 10a' and the protective tape 10a from the base 100.

Referring to FIG. 4E , the wafer 210 and the first conductive layer 120 , the first insulating layer 130 , the second conductive layer 140 and the second insulating layer 150 of the redistribution structure RDL are removed from the substrate 100 . In some embodiments, the release layer 102 is irradiated with laser to separate the first conductive layer 120 and the first insulating layer 130 of the redistribution structure RDL from the substrate 100 .

Then, the connection terminals 250 are formed on the first conductive layer 120 . The connection terminals 250 are, for example, solder balls or other suitable materials. At this point, the semiconductor device 1 is substantially completed.

In summary, the protective tape 10a and the protective tape 10a' can prevent the substrate 100 from warping, thereby improving the manufacturing yield of the semiconductor device 1. In addition, the protective tape 10a and the protective tape 10a' have the advantages of high vacuum resistance, low pollution, heat resistance, chemical resistance, etc., and can make the processing process of the semiconductor device 1 more stable. In addition, the protective tape 10a and the protective tape 10a' can be removed from the substrate 100 by UV light degumming, heating degluing or cold degluing, thereby preventing the substrate 100 from cracking and keeping the surface of the substrate 100 clean.

10: Protective tape 12A: First base material layer 14:Shrink layer 16:Adhesive layer 20: Release layer T1, T2, T3: Thickness

Claims (15)

A protective tape, including: a first base material layer; an adhesive layer; and a shrink layer, the shrink layer is located between the first base material layer and the adhesive layer, wherein the thermal expansion coefficient of the shrink layer at 180°C is greater than Or equal to 100 μm/m°C and less than 400 μm/m°C, and the hardness of the shrinkage layer at 23°C is greater than Shore hardness 30A, wherein the shrinkage layer is composed of raw materials, and the raw materials include oligomers, monomers and polymers. Starting agent, wherein the oligomer includes epoxy acrylate, polyester acrylate, polyurethane acrylate, polyether acrylate or a combination thereof, and the monomer includes monofunctional monomer, difunctional monomer, poly Functional monomers or combinations thereof, and the initiator includes a free radical initiator or a cationic initiator, wherein in the raw material of the shrink layer, the weight ratio of the oligomer is greater than or Equal to 40wt%, the weight ratio of the monomer is 20wt% to 50wt%, and the weight ratio of the starter is less than or equal to 10wt%. The protective tape according to claim 1, wherein the flexural modulus of the shrink layer at 30°C is 1.45MPa, and the flexural modulus at 180°C is 0.19MPa. The protective tape according to claim 1, wherein the flexibility of the first base material layer is greater than the flexibility of the shrink layer. The protective tape according to claim 1, wherein the material of the shrink layer includes acrylic resin, polyurethane resin, epoxy resin, polysiloxane resin or a combination of the above materials. The protective tape according to claim 1, further comprising: a second base material layer, wherein the shrinkage layer is located between the first base material layer and the second base material layer, and the second base material layer The layer is located between the shrink layer and the adhesive layer, wherein the thermal expansion coefficient of the shrink layer at 180°C is greater than the thermal expansion coefficient of the first base material layer at 180°C and the second base material layer at 180°C. thermal expansion coefficient. The protective tape according to claim 5, wherein the material of the first base material layer and the material of the second base material layer include polyethylene terephthalate, polyurethane, polyether ester, polynaphthalene dicarboxylic acid Glycol ester, polyimide, polyetherimide, polyetheretherketone or a combination of the above materials. The protective tape according to claim 1, wherein the thickness of the first base material layer is 25 microns to 200 microns, the thickness of the shrinkage layer is 25 microns to 500 microns, and the thickness of the adhesive layer is 5 microns. to 100 microns. A method of manufacturing a semiconductor device, including: affixing protective tape to the first surface of a substrate, wherein the protective tape includes: a first base material layer; an adhesive layer; and a shrink layer, the shrink layer is located on the first base material layer and the adhesive layer, wherein the thermal expansion coefficient of the shrinkage layer at 180°C is greater than or equal to 100 μm/m°C and less than 400 μm/m°C, and the hardness of the shrinkage layer at 23°C is greater than Shore hardness 30A, The shrink layer is composed of raw materials, and the raw materials include oligomers, monomers and initiators, wherein the oligomers include epoxy acrylate, polyester acrylate, polyurethane acrylate, polyether acrylate or combinations thereof, the monomers include monofunctional base monomer, difunctional monomer, multifunctional monomer or a combination thereof, and the initiator includes a free radical initiator or a cationic initiator, wherein in the raw material of the shrink layer , the weight ratio of the oligomer is greater than or equal to 40wt%, the weight ratio of the monomer is 20wt% to 50wt%, and the weight ratio of the starter is less than or equal to 10wt%; relative to the substrate Depositing at least one first conductive layer and at least one first insulating layer on a second side of the first side; and removing the at least one first conductive layer and the at least one first insulating layer from the substrate. rise. The method of manufacturing a semiconductor device according to claim 8, further comprising: removing the protective tape from the substrate; and affixing another protective tape on the first side of the substrate, wherein the other protective tape The thermal expansion coefficient of the other shrinkage layer of the tape at 180°C is greater than the thermal expansion coefficient of the shrinkage layer of the protective tape at 180°C; deposit at least one on the at least one first conductive layer and the at least one first insulating layer. a second conductive layer and at least a second insulating layer; removing the other protective tape from the substrate; and attaching the at least one first conductive layer, the at least one first insulating layer, the at least one The second conductive layer and the at least one second insulating layer are lifted from the substrate. The manufacturing method of a semiconductor device according to claim 8, further comprising: affixing another protective tape on the first base material layer of the protective tape; Depositing at least one second conductive layer and at least one second insulating layer on the at least one first conductive layer and the at least one first insulating layer; removing the other protective tape and the protective tape from the substrate Tape; and take the at least one first conductive layer, the at least one first insulating layer, the at least one second conductive layer and the at least one second insulating layer from the substrate. The method of manufacturing a semiconductor device according to claim 10, wherein the viscosity of the other adhesive layer of the other protective tape is smaller than the viscosity of the adhesive layer of the protective tape. The method of manufacturing a semiconductor device according to claim 8, wherein after the protective tape is affixed to the first surface of the substrate, the protective tape is cut. The method of manufacturing a semiconductor device according to claim 8, further comprising: after affixing the protective tape to the first surface of the substrate, placing the protective tape on a suction cup. The method of manufacturing a semiconductor device according to claim 8, further comprising: before depositing the at least one first conductive layer and the at least one first insulating layer, forming a release mold on the second surface of the substrate. layer, and the at least one first conductive layer and the at least one first insulating layer are deposited on the release layer. The method of manufacturing a semiconductor device as claimed in claim 14, further comprising: The release layer is irradiated with laser to separate the at least one first conductive layer and the at least one first insulating layer from the substrate.

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