TWM631529U - Protection tape - Google Patents

Abstract

A protection tape includes a first substrate layer, an adhesive layer and a shrinkage layer. The shrinkage layer is located between the first substrate layer and the adhesive layer. The thermal expansion coefficient of the shrinkage layer at 180℃ is larger than or equal to 30 µm/m℃ and less than 100 µm/m℃, and the hardness of the shrinkage layer is greater than the Shore 30A at 23℃.

Description

protective tape

The present invention relates to a protective tape, and in particular, to a protective tape including a shrink layer and a method of manufacturing a semiconductor device using the protective tape.

At present, semiconductor materials are widely used in many electronic devices, such as Microelectromechanical Systems (Microelectromechanical Systems), Complementary Metal Oxide Semiconductor (Complementary Metal Oxide Semiconductor), 3D Integrated Circuits (3DIC), and Memory Chips , Logic chip, Power chip, Radio Frequency chip, Diode, Interposer, etc. With the advancement of technology, semiconductor devices continue to develop in the direction of lightness, thinness, compactness, high performance, and energy saving.

Wafer thinning techniques are often used to reduce the thickness of semiconductor substrates. In addition to reducing the thickness of the wafer, wafer thinning can also reduce the length of the Through Silicon Via (TSV), thereby reducing the power loss of the chip. In today's common three-dimensional integrated circuits, multiple chips are integrated with a semiconductor interposer including TSVs, thereby increasing the bulk density of the device. However, after the thickness of the semiconductor substrate is reduced by the wafer thinning technology, the semiconductor substrate is prone to warpage in the subsequent material deposition process because the thickness is too thin.

This new creation provides a protective tape that can improve the warpage problem of the substrate.

The present invention provides a method for manufacturing a semiconductor device, which can improve the warpage problem of the substrate after the conductive layer and the insulating layer are deposited.

At least one embodiment of the novel creation provides a protective tape. The protective tape includes a first substrate layer, an adhesive layer and a shrink layer. The shrinkage layer is located between the first substrate layer and the adhesive layer. The thermal expansion coefficient of the shrinkable layer at 180°C is greater than or equal to 30 µm/m°C and less than 100 µm/m°C, and the hardness of the shrinkable layer at 23°C is greater than Shore hardness 30A.

In an embodiment of the present invention, the flexural modulus of the shrinkage layer at 30°C is 1.45 MPa, and the flexural modulus at 180°C is 0.19 MPa.

In an embodiment of the present invention, the flexibility of the first substrate layer is greater than the flexibility of the shrinkage layer.

In an embodiment of the novel creation, the material of the shrinkable layer includes acrylic resin, polyurethane resin, epoxy resin, polysiloxane resin or a combination of the above materials.

In an embodiment of the novel creation, the protective tape further includes a second substrate layer. The shrinkage layer is located between the first base material layer and the second base material layer, and the second base material layer is located between the shrinkage layer and the adhesive layer. The thermal expansion coefficient of the shrinkable layer at 180°C is greater than the thermal expansion coefficient of the first substrate layer at 180°C and the thermal expansion coefficient of the second substrate layer at 180°C.

In an embodiment of the novel creation, the material of the first base material layer and the material of the second base material layer include polyethylene terephthalate, polyurethane, polyether, polyethylene naphthalate, Polyimide, polyetherimide, polyetheretherketone, or a combination of the above.

In an embodiment of the novel creation, the shrinkage layer is composed of raw materials, and the raw materials include oligomers, monomers and initiators, wherein the oligomers include epoxy acrylate, polyester acrylate, urethane acrylate, polyether Acrylate or a combination thereof, the monomers include monofunctional monomers, difunctional monomers, multifunctional monomers or a combination thereof, and the initiator includes a free-radical initiator or a cationic initiator.

In an embodiment of the present invention, in the raw materials of the shrinkable layer, the weight ratio of the oligomer is greater than or equal to 40 wt %, the weight ratio of the monomer is 20 wt % to 50 wt %, and the weight ratio of the initiator is less than or equal to 10wt%.

In an embodiment of the present invention, the thickness of the first substrate layer is 25 to 200 microns, the thickness of the shrink layer is 25 to 500 microns, and the thickness of the adhesive layer is 5 to 100 microns.

At least one embodiment of the present invention provides a method for manufacturing a semiconductor device, which includes attaching a protective tape to a first surface of a substrate, grinding a second surface of the substrate opposite to the first surface, and depositing at least one first surface on the second surface of the substrate. A conductive layer and at least a first insulating layer and removing protective tape. The protective tape includes a first substrate layer, an adhesive layer and a shrink layer. The shrinkage layer is located between the first substrate layer and the adhesive layer. The thermal expansion coefficient of the shrinkable layer at 180°C is greater than or equal to 30 µm/m°C and less than 100 µm/m°C, and the hardness of the shrinkable layer at 23°C is greater than Shore hardness 30A.

In an embodiment of the present invention, the method for manufacturing a semiconductor device further includes: after removing the protective tape, sticking another protective tape on the first surface of the substrate, wherein the other protective tape is The thermal expansion coefficient of the shrinkable layer at 180°C is greater than the thermal expansion coefficient of the shrinkage layer of the protective tape at 180°C; at least one second conductive layer and at least one second insulating layer are deposited on the first conductive layer and the first insulating layer ; and remove the other protective tape.

In an embodiment of the present invention, the method for manufacturing a semiconductor device further includes: before removing the protective tape, pasting another protective tape on the first base material layer of the protective tape; At least one second conductive layer and at least one second insulating layer are deposited on the conductive layer and the first insulating layer; the other protective tape and the protective tape are removed.

In an embodiment of the present invention, the viscosity of the other adhesive layer of the other protective tape is smaller than that of the adhesive layer of the protective tape.

In an embodiment of the novel creation, after the protective tape is attached to the first side of the substrate, the protective tape is cut.

In an embodiment of the present invention, the method for manufacturing a semiconductor device further includes: before attaching the protective tape to the first surface of the substrate, forming an opening on the first surface of the substrate; forming a conductive structure on the first surface of the substrate in the opening on one side; grinding the second side of the substrate until the conductive structure in the opening is exposed; and depositing a first conductive layer and a first insulating layer on the conductive structure.

In an embodiment of the present invention, the method for manufacturing a semiconductor device further includes: after the protective tape is attached to the first surface of the substrate, placing the protective tape on the suction cup.

In an embodiment of the present invention, the substrate is a semiconductor wafer.

FIG. 1 is a schematic cross-sectional view of a protective tape according to an embodiment of the present invention.

Please refer to FIG. 1 , the protective tape 10 includes a first substrate layer 12A, an adhesive layer 16 and a shrink layer 14 . The shrinkage layer 14 is located between the first base material layer 12A and the adhesive layer 16 . In some embodiments, before the protective tape 10 is used, the protective tape 10 is disposed on the release layer 20 , wherein the adhesive layer 16 faces the release layer 20 . When the protective tape 10 is to be used, the protective tape 10 is torn off from the release layer 20 , and then the protective tape 10 is attached to other positions.

In some embodiments, the material of the first substrate layer 12A includes polyethylene terephthalate (PET), polyurethane (PU), polyethersulfones (PES), polyethylene naphthalate Polyethylene naphthalate (PEN), Polyimide (PI), Polyetherimide (PEI), Polyetheretherketone (PEEK), a combination of the above materials or other suitable Material. In the embodiment in which the first base material layer 12A is made of polyurethane, the first base material layer 12A can be selected from thermoplastic polyurethane, but the invention is not limited to this. In the embodiment in which the first base material layer 12A is polyimide, the first base material layer 12A can be selected from transparent polyimide, but the invention is not limited to this. In some embodiments, the first base material layer 12A is, for example, a rollable material layer, and the manufacturing method of the first base material layer 12A includes, for example, extraction molding, coating or other suitable processes. The thickness T1 of the first base material layer 12A is, for example, 25 μm to 200 μm.

The shrink layer 14 is located on the first base material layer 12A. In this embodiment, the protective tape 10 has a high thermal expansion coefficient (eg, greater than or equal to 30 µm/m°C and less than 100 µm/m°C) at a high temperature (eg, 180°C). For example, the thermal expansion coefficient of the shrink layer 14 at 180°C is 30 µm/m°C to 40 µm/m°C, 40 µm/m°C to 50 µm/m°C, 50 µm/m°C to 60 µm/m°C, 60 µm/m°C m°C to 70µm/m°C, 70 µm/m°C to 80µm/m°C, 80 µm/m°C to 90µm/m°C or above 90 µm/m°C. In some embodiments, the thermal expansion coefficient of the shrink layer 14 at 180°C is greater than the thermal expansion coefficient of the first substrate layer 12A at 180°C. In some embodiments, the shrinkage layer 14 has a flexural modulus of 1.45 MPa at 30°C and a flexural modulus of 0.19 MPa at 180°C.

In some embodiments, the flexibility of the first substrate layer 12A is greater than the flexibility of the shrink layer 14 . In other words, the first base material layer 12A is selected from a relatively flexible material, and the shrinkable layer 14 is selected from a relatively rigid material. In some embodiments, the hardness of the shrinkable layer 14 at 23 degrees Celsius is greater than 30A Shore Hardness, such as 30A to 50A, 50A to 75A, or 75A to 100A Shore Hardness, thereby preventing the warpage of the ground substrate. .

In some embodiments, the material of the shrink layer 14 includes acrylic resin, polyurethane resin, epoxy resin, polysiloxane resin, a combination of the above materials, or other suitable polymer materials.

The thickness T2 of the shrink layer 14 is, for example, 25 micrometers to 500 micrometers. In some embodiments, the shrink layer 14 is formed directly on the first substrate layer 12A by coating, printing, hot melt extrusion, or other suitable processes.

In some embodiments, the shrinkage layer 14 is composed of raw materials including oligomers, monomers and initiators.

The oligomers in the raw materials constituting the shrinkage layer 14 constitute the main body of the shrinkage layer 14 , and the oligomers determine the main properties of the shrinkage layer 14 after curing. In some embodiments, in the raw material of the shrink layer 14 , the weight ratio of the oligomer is greater than or equal to 40 wt %, for example, 40 wt % to 80 wt %. In some embodiments, the oligomers include epoxy acrylates, polyester acrylates, urethane acrylates, polyether acrylates, or combinations thereof. Table 1 compares the properties of shrink layers 14 composed of different oligomers. Table 1 epoxy acrylate polyester acrylate urethane acrylate polyether acrylate Hardening rate quick middle slow middle flexibility middle middle it is good Difference elasticity Difference it is good it is good it is good chemical resistance excellent middle it is good middle hardness high middle Low Low Yellowing resistance Difference Difference middle excellent

As can be seen from Table 1, in order to obtain the shrinkage layer 14 with relatively hard hardness, the oligomer is preferably epoxy acrylate and/or polyester acrylate. For example, the oligomer is selected from one or more kinds of epoxy acrylate or polyester acrylate, and the weight average molecular weight of the oligomer is 1,000 to 100,000, and in the raw material of the shrink layer 14, the oligomer has a The weight ratio is greater than or equal to 40 wt%, 50 wt%, 60 wt% or 70 wt%. Based on the above, the shrinkable layer 14 has the advantages of high rigidity, high tensile strength, and wear resistance.

It should be noted that Table 1 provides the effect of different oligomers on the properties of the shrink layer 14, but is not intended to limit the present application. In fact, the properties of the shrink layer 14 may also vary due to other factors.

The monomers in the raw materials constituting the shrinkable layer 14 are suitable for adjusting the viscosity and participate in the polymerization reaction. The amount of monomer in the raw material also affects the performance of the shrink layer 14 after curing. In some embodiments, in the raw material of the shrink layer 14, the weight ratio of the monomers is 20 wt% to 50 wt%. In some embodiments, the monomers include monofunctional monomers, difunctional monomers, multifunctional monomers, or combinations thereof.

化學式2

In some embodiments, the monofunctional monomer is, for example, deca acrylate (Isodecyl acrylate, IDA) or tetrahydrofurfuryl acrylate (Tetrahydrofurfuryl acrylate, THFA), wherein the chemical structures of deca acrylate and tetrahydrofurfuryl acrylate are as follows, respectively Chemical formula 1 and chemical formula 2 are shown. Chemical formula 1

Chemical formula 2

In some embodiments, the difunctional monomer is, for example, hexanediol diacrylate (Hexanediol diacrylate, HDDA), wherein the chemical structure of hexanediol diacrylate is as follows Chemical formula 3. chemical formula 3

化學式5

In some embodiments, the multifunctional monomer is, for example, Trimethylolpropane Triacrylate (TMPTA) or Dipentaerythritol Hexaacrylate (DPHA), wherein Trimethylolpropane Triacrylate (DPHA) The chemical structures of the ester and dipentaerythritol hexaacrylate are as follows Chemical formula 4 and Chemical formula 5, respectively. chemical formula 4

chemical formula 5

Table 2 compares the effect of increasing the number of functional groups of the monomer on the properties of the formed shrink layer 14 and the effect of increasing the chain length of the monomer on the properties of the formed shrink layer 14 . Table 2 polymerization rate hardness Shrinkage stickiness flexibility chemical resistance Increased number of functional groups Increase Increase Increase reduce reduce Increase chain length increase reduce reduce reduce Increase Increase reduce

As can be seen from Table 2, in order to obtain the shrinkage layer 14 with relatively hard hardness, the monomers are preferably bifunctional and/or multifunctional monomers. For example, the monomers are selected from one or more difunctional monomers and multifunctional monomers, and in the raw materials of the shrinkable layer 14, the weight ratio of the monomers is greater than 20 wt%, greater than 30 wt% or More than 40 wt%, to adjust the formula and improve the wettability of the substrate. In addition, after curing (eg, UV curing), the bridging density of the structure can be increased, and can impart rigidity to the material, thereby increasing the hardness of the cured shrink layer 14 .

It should be noted that Table 2 provides the effect of adjusting the monomers on the properties of the shrink layer 14, but is not intended to limit the present application. In fact, the properties of the shrink layer 14 may also vary due to other factors.

The initiators in the raw materials constituting the shrinkable layer 14 are suitable for initiating polymerization and bridging reactions. For example, monomers and oligomers are polymerized and bridged with one or more initiators. In some embodiments, the initiator includes a free-radical initiator or a cationic initiator. In some embodiments, in the raw material of the shrink layer 14, the weight ratio of the initiator is less than or equal to 10wt%, for example, less than or equal to 9wt%, 8wt%, 7wt%, 6wt%, 5wt%, 4wt%, 3wt%, 2wt% or 1wt%. In some embodiments, the initiator is a photoinitiator, and it is suitable for absorbing ultraviolet light to initiate a polymerization reaction, but the invention is not limited thereto. In other embodiments, the shrink layer 14 may be a thermoset material.

In some embodiments, the polyester acrylate resin uses a free radical type photoinitiator, such as 1-hydroxycyclohexyl phenyl ketone (1-hydroxycyclohexyl phenyl ketone), the chemical structure of which is as follows Chemical formula 6. chemical formula 6

化學式8

In some embodiments, epoxy acrylate resins use cationic photoinitiators such as Diphenyl (4-phenylthio) phenyl sulfonium hexafluoroantimonate and / or (Thiodi-4,1-phenylene) bis(diphenylsulfonium) dihexafluoroiminate ((Thiodi-4,1-phenylene) bis (diphenylsulfonium) dihexafluoroatimonate), the chemical structures of which are as follows Chemical formula 7 and chemical formula 8. chemical formula 7

chemical formula 8

In some embodiments, the raw materials composing the shrink layer 14 further include additives. Additives are, for example, surfactants, stabilizers, dyes, solvents or other materials. In some embodiments, in the raw material of the shrinkage layer 14, the weight ratio of the additive is 0wt% to 10wt%, such as 9wt%, 8wt%, 7wt%, 6wt%, 5wt%, 4wt%, 3wt%, 2wt% % or 1wt%.

In one embodiment, the raw materials of the shrinkable layer 14 include oligomers, monomers, photoinitiators and additives, wherein the weight ratio of the oligomers is greater than 50wt%, the weight ratio of the monomers is 20wt% to 40wt%, and the light The weight ratio of the initiator is less than 10 wt%, and the weight ratio of the additive is less than 5 wt%. In the foregoing embodiment, the oligomer includes polybutadiene dimethacrylate oligomer, and the monomer includes Tetrahydrofurfurly Acrylate and 1,6-hexanediol diacrylate ( 1,6-Hexanediol diacrylate, HDDA), photoinitiators including 1-hydroxycyclohexyl phenyl ketone and phenyl bis(2,4,6-trimethylbenzoyl) oxidation Phosphine (phenyl bis(2,4,6-trimethylbenzoyl)-phosphine oxide), and the additive is γ-mercaptopropyltrimethoxysilane (γ-Mercaptopropyltrimethoxysilane).

The adhesive layer 16 is located on the shrink layer 14 . In some embodiments, the adhesiveness of the adhesive layer 16 is greater than the adhesiveness of the shrinkage layer 14 . The adhesive layer 16 is, for example, a pressure-sensitive adhesive. In some embodiments, the material of the adhesive layer 16 includes acrylic resin, polyurethane resin, polysiloxane resin, a combination of the above materials, or other suitable polymer materials.

In some embodiments, the adhesive layer 16 includes a photosensitive material, and the adhesive layer 16 reduces the adhesive force after being irradiated with light (eg, ultraviolet light), so that the protective tape 10 can be debonded by the light. In some embodiments, the adhesive layer 16 includes a thermosetting material, and the adhesive layer 16 reduces the adhesive force after heating, so that the protective tape 10 can be debonded by heating. In some embodiments, the adhesive layer 16 includes a cryolytic material, and the temperature of the adhesive layer 16 below the glass transition temperature reduces the adhesive force, so that the protective tape 10 can be debonded by refrigeration.

The thickness T3 of the adhesive layer 16 is, for example, 5 μm to 100 μm. In some embodiments, the adhesive layer 16 is formed directly on the shrink layer 14 by coating, printing or other suitable process.

The adhesive layer 16 is suitable for adhering the protective tape 10 to an object to be attached (eg, a substrate). The ways of adhering the adhesive layer 16 to other materials include physical adsorption (Adsorption), diffusion, electrostatic adsorption, mechanical interlocking (Mechanical interlocking) and chemical bonding. Physical adsorption, for example, involves adsorption by Van der Waals forces or hydrogen bonding. Diffusion is, for example, a phenomenon of mutual diffusion at the interface between the adhesive layer 16 and the object to be attached when the temperature is higher than the glass transition temperature of the adhesive layer 16 . The mechanical interlocking buckle is, for example, subjected to physical treatment or chemical treatment on the surface of the object to be attached, so as to roughen the surface of the object to be attached, so that the adhesive layer 16 can be engaged with the rough surface of the object to be attached.

In order to make the adhesive layer 16 better adhere to the object to be attached, the rigidity of the adhesive layer 16 should not be too high, so that the adhesive layer 16 can fill all the slits on the surface of the object to be attached, so as to improve the adhesion between the adhesive layer 16 and the object to be attached. contact area between surfaces.

In this embodiment, the bridging density of the shrinkage layer 14 is greater than that of the adhesive layer 16 , the weight average molecular weight of the shrinkage layer 14 is greater than that of the adhesive layer 16 , and the glass transition temperature of the shrinkage layer 14 is greater than that of the adhesive layer 16 . temperature.

In some embodiments, the weight average molecular weight of the shrink layer 14 is 400,000 to 800,000 g/mol, and the weight average molecular weight of the adhesive layer 16 is 10,000 to 1,200,000 g/mol. In some embodiments, the glass transition temperature of the shrink layer 14 is greater than 20°C, and the glass transition temperature of the adhesive layer 16 is less than 20°C. For example, when using the protective tape 10 that can be debonded by light or heat, the glass transition temperature of the adhesive layer 16 is less than -20°C, such as -20°C to -60°C. When the adhesive tape 10 is used, the glass transition temperature of the adhesive layer 16 is less than 20°C, for example, -10°C to 10°C.

The release layer 20 can be any kind of release material. For example, the release layer 20 is polyethylene terephthalate (PET), polyolefins (PO) or release paper. The thickness of the release layer 20 is, for example, 25 μm to 175 μm.

2 is a schematic cross-sectional view of a protective tape according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 2 uses the element numbers and part of the content of the embodiment of FIG. 1 , wherein the same or similar numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated here.

The main difference between the protective tape 10a of FIG. 2 and the protective tape 10 of FIG. 1 is that the protective tape 10a further includes a second base material layer 12B.

Referring to FIG. 2 , the protective tape 10 a includes a first substrate layer 12A, a second substrate layer 12B, an adhesive layer 16 and a shrink layer 14 . The shrinkage layer 14 is located between the first base material layer 12A and the second base material layer 12B, and the second base material layer 12B is located between the shrinkage layer 14 and the adhesive layer 16 . In some embodiments, the second substrate layer 12B has a flexural modulus of 1.4 GPa at 30°C and a flexural modulus of 0.18 GPa at 180°C.

In some embodiments, the materials of the first substrate layer 12A and the second substrate layer 12B include polyethylene terephthalate, polyurethane, polyether, polyethylene naphthalate, and polyimide , polyetherimide, polyetheretherketone, combinations of the above materials, or other suitable materials. In the embodiment in which the second base material layer 12B is made of polyurethane, the second base material layer 12B can be selected from thermoplastic polyurethane, but the invention is not limited to this. In the embodiment in which the second base material layer 12B is polyimide, the second base material layer 12B can be selected from transparent polyimide. In some embodiments, the first base material layer 12A and the second base material layer 12B are, for example, rollable material layers, and the manufacturing methods of the first base material layer 12A and the second base material layer 12B include, for example, extraction molding, coating cloth or other suitable process. The thickness T1 of the first base material layer 12A and the thickness T4 of the second base material layer 12B are, for example, 25 μm to 200 μm.

The first base material layer 12A and the second base material layer 12B may include the same or different materials. In some embodiments, the thermal expansion coefficient of the second substrate layer 12B at 180°C is greater than the thermal expansion coefficient of the first substrate layer 12A at 180°C.

In some embodiments, the thermal expansion coefficient of the shrinkable layer 14 at 180°C is greater than the thermal expansion coefficient of the first substrate layer 12A at 180°C and the thermal expansion coefficient of the second substrate layer 12B at 180°C.

Table 3 shows the effect of varying the thickness T1 of the first base material layer 12A, the thickness T2 of the shrink layer 14, and the thickness T4 of the second base material layer 12B on the degree of warpage of the protective tape 10a. It should be noted that Table 3 shows the degree of warpage after the heat treatment when the protective tape 10a is not attached to other devices. In Examples 1 to 9, the material of the first base material layer 12A is polyethylene terephthalate, the material of the shrinkable layer 14 is acrylic resin, and the material of the second base material layer 12B is polyethylene terephthalate. Ethylene terephthalate. table 3 T1(µm) T2(µm) T4(µm) Warpage degree after heating at 150℃ for 4hr(mm) Warpage at 200℃ for 1hr(mm) Example 1 50 200 38 1 7.5~8 Example 2 100 1.5~3 4~6.5 Example 3 75 2.5~4.5 7~ 10.5 Example 4 50 2.5~4.5 6.5~11.5 Example 5 38 200 38 1.5~2.5 1.5 Example 6 100 2~3.5 1.5 Example 7 75 1~3.5 1.5~2 Example 8 50 1~2.5 1.5~2.5 Example 9 125 50 38 11~12 10~11

In Examples 1 to 4 in Table 3, the thinner the thickness of the shrink layer 14 is, the more the protective tape 10a tends to be bent after the heat treatment at 150°C. In addition, in Examples 1 to 4, since the thermal expansion coefficient of the second base material layer 12B is larger than that of the first base material layer 12A, the protective tape 10a tends to warp in the direction of the second base material layer 12B.

In addition, from Examples 5 to 8 in Table 3, it can be known that when the thicknesses of the first base material layer 12A and the second base material layer 12B are the same as the materials, the thickness of the shrinkable layer 14 is significantly affected by the thickness of the protective tape 10a at 200°C. The degree of warpage after heat treatment does not have much effect. In addition, in Examples 5 to 8, the protective tape 10a is warped in random directions.

In addition, in Example 9 of Table 3, after the heat treatment at 150° C., although the thermal expansion coefficient of the first base material layer 12A is low, the flexural modulus of the material is large, so that the protective tape 10a tends to move to the first base material layer 12A. warping in the direction. After heat treatment at 200°C, since the flexural modulus of the first base material layer 12A decreases, the overall internal stress decreases, and the protective tape 10a warps in the direction of the second base material layer 12B having a higher thermal expansion coefficient. In other words, in Example 9, the warpage direction of the protective tape 10a after the heat treatment at 150°C was different from the warpage direction of the protective tape 10a after the heat treatment at 200°C.

Table 4 provides the coefficient of thermal expansion in the MD direction (film draw direction) and glass transition temperature (Tg) for the shrink layer and some of the second substrate layers. Table 4 Thickness (µm) Thermal expansion coefficient α1 Tg(℃) Thermal expansion coefficient α2 µm/m°C Temperature range (℃) µm/m°C Temperature range (℃) shrink layer 200 8.51 30~70 127.29 89.63 165~195 second substrate layer 38 14.83 30~70 113.87 97.56 165~195 second substrate layer 50 8.227 30~70 108.66 67.01 165~195 second substrate layer 125 7.729 30~70 93.5 49.22 165~195

Table 5 provides the thermal expansion coefficients and glass transition temperatures (Tg) in the TD direction (perpendicular to the draw-down direction) for the first substrate layer, the shrink layer, and some second substrate layers. table 5 Thickness (µm) Thermal expansion coefficient α1 Tg(℃) Thermal expansion coefficient α2 µm/m°C Temperature range (℃) µm/m°C Temperature range (℃) first substrate layer 50 22.81 30~280 - - - shrink layer 200 7.77 30~70 120.14 99.48 165~195 second substrate layer 38 5.907 30~70 120.2 125.5 165~195 second substrate layer 50 5.994 30~70 113.4 109.1 165~195 second substrate layer 125 5.321 30~70 114.56 73.76 165~195

In Tables 4 and 5, the material of the shrinkable layer is acrylic resin, and the material of the second base material layer is polyethylene terephthalate. In addition, in Table 5, the material of the first base material layer is polyimide with high heat resistance and thermal stability.

3A to 3J are schematic cross-sectional views of a method for fabricating a semiconductor device according to an embodiment of the present invention. It must be noted here that the embodiments of FIG. 3A to FIG. 3J use the element numbers and part of the content of the embodiment of FIG. 2 , wherein the same or similar numbers are used to represent the same or similar elements, and the same technical content is omitted. illustrate. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated here.

Referring to FIG. 3A , a substrate 100 is provided. The substrate 100 is, for example, a semiconductor substrate, and its material includes silicon, gallium arsenide, silicon carbide, gallium nitride or other semiconductor materials. In some embodiments, the substrate 100 is a semiconductor wafer. The substrate 100 includes a first side 100a and a second side 100b opposite to the first side 100a. In some embodiments, the substrate 100 initially has a thickness of 750 microns to 775 microns.

Referring to FIG. 3B , an opening 102 is formed on the first surface 100 a of the substrate 100 . In the step shown in FIG. 3B , the opening 102 does not penetrate the substrate 100 .

Referring to FIG. 3C, a conductive structure 110 is formed in the opening 102 on the first surface 100a. In some embodiments, the method of forming the conductive structure 110 includes, for example, physical vapor deposition, chemical vapor deposition, electroplating, sputtering, or other suitable deposition processes. In some embodiments, portions of the deposited conductive material beyond openings 102 are removed through a polishing process (eg, a chemical mechanical polishing process) to leave conductive structures 110 . In other embodiments, the shape of the conductive structure 110 is defined by a lithography process and an etching process.

In some embodiments, a seed layer (not shown) is formed on the first side 100 a of the substrate 100 and in the opening 102 before forming the conductive structure 110 , thereby improving the manufacturing yield of the conductive structure 110 .

After the conductive structure 110 is formed, a micro bump 112 is formed on the conductive structure 110 . In some embodiments, the method of forming the microbumps 112 includes, for example, sputtering, electroplating, or other suitable processes.

In some embodiments, the process of forming the conductive structures 110 and the microbumps 112 includes a high temperature process (eg, a process with a temperature higher than 180° C.). Since the thermal expansion coefficient of the conductive structure 110 and/or the micro-bumps 112 is higher than the thermal expansion coefficient of the substrate 100, when the substrate 100 is lowered from a high temperature to room temperature, the first surface 100a of the substrate 100 may The shrinkage of the bumps 112 occurs with a shrinking force F that tends to warp the substrate 100 upwards.

Referring to FIG. 3D , the protective tape 10 a is attached to the first surface 100 a of the substrate 100 . In this embodiment, the hardness of the protective tape 10 a at room temperature (eg, 23° C.) is greater than the Shore hardness of 30A, thus helping to reduce the warpage problem of the substrate 100 .

In some embodiments, the area of the protective tape 10a is larger than the area of the first side 100a of the substrate 100 . After the protective tape 10a larger than the substrate 100 is attached to the first surface 100a of the substrate 100, the protective tape 10a and the substrate 100 are aligned along the dicing line CL through a dicing process. Therefore, when attaching the protective tape 10a to the substrate 100 (the step shown in FIG. 3D ), it is not necessary to precisely align the protective tape 10a with the substrate 100 . Based on the above, compared to the precise alignment required for attaching other rigid supports (eg glass) to the substrate 100 by wax or other adhesive materials, the present embodiment can more easily attach the protective tape 10a to the substrate 100 . In addition, the present embodiment will not affect subsequent processes due to inaccurate alignment during the lamination process.

In addition, it should be noted that although this embodiment takes the protective tape 10a of FIG. 2 as an example, the invention is not limited to this. In other embodiments, the protective tape 10 of FIG. 1 is attached to the first surface 100 a of the substrate 100 .

Next, referring to FIG. 3E, the protective tape 10a is placed on the suction cup CK. In some embodiments, the suction cup CK adsorbs the first base material layer 12A of the protective tape 10a by electrostatic force, vacuum force or other methods.

The second side 100b of the substrate 100 is ground until the conductive structures 110 in the openings 102 are exposed. In some embodiments, the aforementioned polishing process includes a chemical mechanical polishing process. In some embodiments, the thickness of the substrate 100 after grinding is 10 microns to 100 microns.

Referring to FIG. 3F , at least one first conductive layer 120 and at least one first insulating layer 130 are deposited on the conductive structure 110 and the second surface 100 b of the substrate 100 . In this embodiment, multiple layers of the first conductive layer 120 and multiple layers of the first insulating layer 130 are deposited on the conductive structure 110 and the second surface 100 b of the substrate 100 .

In some embodiments, the method of depositing the first conductive layer 120 includes, for example, physical vapor deposition, chemical vapor deposition, electroplating, sputtering or other suitable deposition processes, and the method of depositing the first insulating layer 130 includes, for example, physical vapor deposition Phase deposition, chemical vapor deposition, spin coating or other suitable deposition process. In some embodiments, the shape of the first conductive layer 120 and the shape of the first insulating layer 130 are defined through a lithography process and an etching process.

In some embodiments, the process of forming the first conductive layer 120 and the first insulating layer 130 includes a high temperature process (eg, a process with a temperature higher than 180° C.). Since the thermal expansion coefficient of the first conductive layer 120 and/or the first insulating layer 130 is higher than the thermal expansion coefficient of the substrate 100, when the substrate 100 is lowered from a high temperature to room temperature, the second surface 100b of the substrate 100 may be damaged by the first conductive layer 120 and/or the first insulating layer 130 shrink to produce a shrinking force F that tends to warp the substrate 100 upward.

In some embodiments, since the thermal expansion coefficient of the protective tape 10a is higher than the thermal expansion coefficient of the first conductive layer 120 and the first insulating layer 130, the shrinkage force F' generated by the shrinkage of the protective tape 10a can prevent the shrinkage force F from causing the substrate 100 warps upwards, even causing the substrate 100 to tend to warp downwards. Since the suction cup CK exerts a downward force on the substrate 100 to suck the substrate 100 , the substrate 100 warped downward is more likely to be sucked by the suction cup CK than the substrate 100 warped upward. In some embodiments, the thermal expansion coefficient of the shrinkable layer 14 of the protective tape 10a at 180°C is greater than the thermal expansion coefficient of the first conductive layer 120 and the first insulating layer 130 at 180°C. In some embodiments, in addition to the shrink layer 14 , the thermal expansion coefficients of the first substrate layer 12A and the second substrate layer 12B of the protective tape 10 a at 180° C. are also greater than those of the first conductive layer 120 and the first insulating layer 130 at 180° C. A thermal expansion coefficient of 180° C., thereby further avoiding upward warping of the substrate 100 .

In this embodiment, three layers of the first conductive layer 120 and two layers of the first insulating layer 130 are formed, wherein after each layer of the first conductive layer 120 or the first insulating layer 130 is formed, the shrinkage force F gradually increases. It should be noted that, in this embodiment, three layers of the first conductive layer 120 and two layers of the first insulating layer 130 are formed as an example, but the invention is not limited to this. The numbers of the first conductive layers 120 and the first insulating layers 130 can be adjusted according to actual needs.

As the shrinking force F increases, the substrate 100 may transition from a tendency to warp downward to warping upward. After the shrinking force F reaches a certain level, in order to prevent the substrate 100 from warping upward and detaching from the suction cup CK, the base 100 and the protective tape 10a are removed from the suction cup CK, and another surface is attached to the first surface 100a of the base 100 The protective tape 10a' is shown in Figs. 3G to 3H.

Referring to FIG. 3G , after the substrate 100 and the protective tape 10 a are removed from the suction cup CK, the protective tape 10 a is removed from the substrate 100 .

Referring to FIG. 3H , another protective tape 10a' is attached to the first surface 100a of the substrate 100 . The protective tape 10a' includes a first substrate layer 12A', a second substrate layer 12B', an adhesive layer 16', and a shrink layer 14'. The protective tape 10a' has a larger thermal expansion coefficient than the protective tape 10a. In some embodiments, the thermal expansion coefficient of the shrink layer 14' of the protective tape 10a' at 180°C is greater than the thermal expansion coefficient of the shrink layer 14 of the protective tape 10a at 180°C. In some embodiments, the thermal expansion coefficient of the first base material layer 12A' and the second base material layer 12B' of the protective tape 10a' at 180°C is greater than that of the first base material layer 12A and the second base material layer 12B of the protective tape 10a Thermal expansion coefficient at 180°C.

In some embodiments, the original area of the protective tape 10a' is larger than the area of the substrate 100, and after the protective tape 10a' is attached to the substrate 100, the protective tape 10a' is aligned with the substrate 100 through a cutting process.

In some embodiments, by adjusting the materials or thicknesses of the first base material layer, the second base material layer, and the shrinkage layer, the protective tape 10a' is easier to generate the shrinkage force F' on the substrate 100 than the protective tape 10a.

In some embodiments, the shrinkage layer 14' has a hardness greater than 30A Shore hardness at 23 degrees Celsius, such as 30A to 50A, 50A to 75A, or 75A to 100A Shore hardness, thereby suppressing the warpage problem of the substrate 100.

After the protective tape 10a' is attached to the substrate 100, the protective tape 10a' is placed on the suction cup CK. In some embodiments, the suction cup CK adsorbs the first substrate layer 12A' of the protective tape 10a' by electrostatic force, vacuum force or other means.

Referring to FIG. 3I , at least one second conductive layer 140 and at least one second insulating layer 150 are deposited on the first conductive layer 120 and the first insulating layer 130 . In this embodiment, multiple layers of the second conductive layer 140 and multiple layers of the second insulating layer 150 are deposited on the first conductive layer 120 and the first insulating layer 130 .

In some embodiments, the method for depositing the second conductive layer 140 includes, for example, physical vapor deposition, chemical vapor deposition, electroplating, sputtering or other suitable deposition processes, and the method for depositing the second insulating layer 150 includes, for example, physical vapor deposition Phase deposition, chemical vapor deposition, spin coating or other suitable deposition process. In some embodiments, the shape of the second conductive layer 140 and the shape of the second insulating layer 150 are defined through a lithography process and an etching process.

In some embodiments, the process of forming the second conductive layer 140 and the second insulating layer 150 includes a high temperature process (eg, a process with a temperature higher than 180° C.). Since the thermal expansion coefficient of the first conductive layer 120 , the first insulating layer 130 , the second conductive layer 140 and/or the second insulating layer 150 is higher than that of the substrate 100 , when the substrate 100 is lowered from a high temperature to room temperature, the substrate 100 The second surface 100b of the substrate 100b may experience a shrinkage force F that tends to warp the substrate 100 upward due to the shrinkage of the first conductive layer 120, the first insulating layer 130, the second conductive layer 140 and/or the second insulating layer 150.

In some embodiments, since the thermal expansion coefficient of the protective tape 10 a ′ is higher than the thermal expansion coefficient of the first conductive layer 120 , the first insulating layer 130 , the second conductive layer 140 and/or the second insulating layer 150 , the protective tape 10 a ′ The 'contraction force F generated by shrinkage' can prevent the substrate 100 from warping upwards due to the contractile force F, or even causing the substrate 100 to warp downwards. In some embodiments, the thermal expansion coefficient of the shrink layer 14 ′ of the protective tape 10 a ′ at 180° C. is greater than that of the first conductive layer 120 , the first insulating layer 130 , the second conductive layer 140 and/or the second insulating layer 150 at 180° C. the thermal expansion coefficient. In some embodiments, in addition to the shrink layer 14', the thermal expansion coefficients of the first substrate layer 12A' and the second substrate layer 12B' of the protective tape 10a' at 180°C are also greater than those of the first conductive layer 120, the first substrate layer 12B' The thermal expansion coefficient of the insulating layer 130 , the second conductive layer 140 and/or the second insulating layer 150 at 180° C., thereby further preventing the substrate 100 from bending upward.

It should be noted that, in this embodiment, two layers of the second conductive layer 140 and two layers of the second insulating layer 150 are formed as an example, but the invention is not limited to this. The number of the second conductive layer 140 and the second insulating layer 150 can be adjusted according to actual needs.

In this embodiment, the redistribution structure RDL on the substrate 100 includes the first conductive layer 120 , the first insulating layer 130 , the second conductive layer 140 and the second insulating layer 150 , but the invention is not limited thereto. The redistribution structure RDL on the substrate 100 may further include other conductive layers and insulating layers.

3J, the substrate 100 and the protective tape 10a' are removed from the suction cup CK, and then the protective tape 10a' is removed from the substrate 100. So far, the semiconductor device 1 is substantially completed. In this embodiment, the semiconductor device 1 is, for example, an interposer in a three-dimensional integrated circuit. In some embodiments, one or more chips are bonded on the microbumps 112 of the semiconductor device 1 , and solder balls or other similar elements are formed on the redistribution structure RDL of the semiconductor device 1 .

In this embodiment, the protective tape 10a and the protective tape 10a' are used in the process of manufacturing the semiconductor device 1, but the invention is not limited to this. In other embodiments, more than three different protective tapes may be used in the process of manufacturing the semiconductor device 1 to form more conductive layers and insulating layers on the substrate 100 .

4A to 4C are schematic cross-sectional views of a method for fabricating a semiconductor device according to an embodiment of the present invention. It must be noted here that the embodiments of FIGS. 4A to 4C use the element numbers and part of the content of the embodiments of FIGS. 3A to 3J , wherein the same or similar numbers are used to represent the same or similar elements, and the same elements are omitted. Description of technical content. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated here.

Referring to FIG. 4A , following the step of FIG. 3F , after the shrinking force F is large to a certain extent, in order to prevent the substrate 100 from warping upward and detaching from the suction cup CK, the base 100 and the protective tape 10a are taken up from the suction cup CK, and Another protective tape 10a' is attached to the first base material layer 12A of the protective tape 10a. Next, the protective tape 10a' is placed on the suction cup CK. In other words, in this embodiment, after the protective tape 10a is taken up from the suction cup CK, the protective tape 10a is not removed from the substrate 100 .

In some embodiments, the original area of the protective tape 10a' is larger than the area of the protective tape 10a, and after the protective tape 10a' is attached to the protective tape 10a, the protective tape 10a' and the protective tape 10a are trimmed and aligned by a cutting process allow.

Next, please refer to FIG. 4B , at least one second conductive layer 140 and at least one second insulating layer 150 are deposited on the first conductive layer 120 and the first insulating layer 130 .

In this embodiment, the thermal expansion coefficients of the protective tape 10 a and the protective tape 10 a ′ at 180° C. are both greater than those of the first conductive layer 120 , the first insulating layer 130 , the second conductive layer 140 and/or the second insulating layer 150 at 180° C. the thermal expansion coefficient. Therefore, after the deposition of the second conductive layer 140 and the second insulating layer 150 , the shrinkage force F′ generated by the protective tape 10 a and the protective tape 10 a ′ can prevent the substrate 100 from being generated by the second conductive layer 140 and the second insulating layer 150 . The shrinkage force F causes warping.

In some embodiments, the tackiness of the adhesive layer 16' of the protective tape 10a' is less than that of the adhesive layer 16 of the protective tape 10a, so that the protective tape 10a' can be prevented from tearing the protective tape 10a from the substrate 100.

Next, referring to FIG. 4C, the substrate 100, the protective tape 10a' and the protective tape 10a are taken up from the suction cup CK, and then the protective tape 10a' and the protective tape 10a are removed. So far, the semiconductor device 1 is substantially completed.

In conclusion, the protective tape 10a and the protective tape 10a' can replace the conventional glass carrier for transferring the substrate 100 in the process. In addition, the protective tape 10a and the protective tape 10a' have the advantages of high vacuum resistance, low contamination, heat resistance, chemical resistance, etc., and can make the processing of the semiconductor device 1 more stable. In addition, the protective tape 10a and the protective tape 10a' can be removed from the substrate 100 by means of ultraviolet photodissolving, thermal dissolving or cooling dissolving, thereby preventing the substrate 100 from being broken and keeping the surface of the substrate 100 clean.

5A to 5B are schematic cross-sectional views of a method for fabricating a semiconductor device according to an embodiment of the present invention.

Referring to FIG. 5A , a redistribution structure RDL is formed on the second surface 100 b of the substrate 100 in the manner of FIGS. 3A to 3J or FIGS. 4A to 4C . In this embodiment, the micro-bumps 112 are not formed on the first surface 100 a of the substrate 100 .

Next, referring to FIG. 5B , a redistribution structure RDL' is formed on the first surface 100a of the substrate 100 in the manner of FIGS. 3A to 3J or 4A to 4C. Specifically, the substrate 100 is turned over, and one or more protective tapes in the foregoing embodiments are attached to the redistribution structure RDL, and a first conductive layer 120 ′ and a first insulating layer are deposited on the second surface 100 b of the substrate 100 130', the second conductive layer 140' and the second insulating layer 150'. So far, the semiconductor device 2 is substantially completed.

In summary, the protective tape can replace the conventional glass carrier for transferring the substrate 100 during the process. In addition, the protective tape has the advantages of high vacuum resistance, low contamination, heat resistance, chemical resistance, etc., and can make the processing process of the semiconductor device 2 more stable. In addition, the protective tape can be removed from the substrate 100 by means of ultraviolet photodissolving, thermal dissolving or cooling dissolving, thereby preventing the substrate 100 from being broken and keeping the surface of the substrate 100 clean.

1: Semiconductor device 2: Semiconductor device 10, 10a, 10a’: Protective tape 12A, 12A': first substrate layer 12B, 12B': Second substrate layer 14, 14': shrink layer 16, 16': Adhesive layer 20: release layer 100: base 100a: first side 100b: Second side 102: Opening 110: Conductive structure 112: Micro bumps 120: the first conductive layer 130: first insulating layer 140: the second conductive layer 150: Second insulating layer CK: sucker CL: cutting line F, F': contractile force RDL: Rewired Structure T1, T2, T3, T4: Thickness

FIG. 1 is a schematic cross-sectional view of a protective tape according to an embodiment of the present invention. 2 is a schematic cross-sectional view of a protective tape according to an embodiment of the present invention. 3A to 3J are schematic cross-sectional views of a method for fabricating a semiconductor device according to an embodiment of the present invention. 4A to 4C are schematic cross-sectional views of a method for fabricating a semiconductor device according to an embodiment of the present invention. 5A to 5B are schematic cross-sectional views of a method for fabricating a semiconductor device according to an embodiment of the present invention.

10: Protective tape

12A: The first substrate layer

14: Shrink layer

16: Adhesive layer

20: release layer

T1, T2, T3: Thickness

Claims (9)

A protective tape comprising: a first substrate layer; adhesive layer; and A shrinkage layer, the shrinkage layer is located between the first substrate layer and the adhesive layer, wherein the thermal expansion coefficient of the shrinkage layer at 180°C is greater than or equal to 30 µm/m°C and less than 100 µm/m°C, and The hardness of the shrinkage layer at 23° C. is greater than the Shore hardness of 30A. The protective tape of claim 1, wherein the shrinkage layer has a flexural modulus of 1.45 MPa at 30°C and a flexural modulus of 0.19 MPa at 180°C. The protective tape of claim 1, wherein the flexibility of the first substrate layer is greater than the flexibility of the shrink layer. The protective tape of claim 1, wherein the material of the shrinkage layer comprises acrylic resin, polyurethane resin, epoxy resin, polysiloxane resin or a combination of the above materials. The protective tape as claimed in claim 1, further comprising: A second base material layer, wherein the shrinkage layer is located between the first base material layer and the second base material layer, and the second base material layer is located between the shrinkage layer and the adhesive layer , wherein the thermal expansion coefficient of the shrinkable layer at 180°C is greater than the thermal expansion coefficient of the first substrate layer at 180°C and the thermal expansion coefficient of the second substrate layer at 180°C. The protective tape according to claim 5, wherein the material of the first base material layer and the material of the second base material layer include polyethylene terephthalate, polyurethane, polyether tallow, polyethylene naphthalate Glycol ester, polyimide, polyetherimide, polyetheretherketone, or a combination of the above. The protective tape according to claim 1, wherein the shrinkable layer is composed of raw materials, the raw materials include oligomers, monomers and initiators, wherein the oligomers include epoxy acrylate, polyester acrylate , urethane acrylate, polyether acrylate or a combination thereof, the monomers include a monofunctional monomer, a difunctional monomer, a multifunctional monomer or a combination thereof, and the initiator includes a free radical type starting agent starter or cationic starter. The protective tape according to claim 7, wherein in the raw material of the shrinkable layer, the weight ratio of the oligomer is greater than or equal to 40 wt %, and the weight ratio of the monomer is 20 wt % to 50 wt % %, and the weight ratio of the initiator is less than or equal to 10 wt%. The protective tape of claim 1, wherein the thickness of the first substrate layer is 25 to 200 microns, the thickness of the shrink layer is 25 to 500 microns, and the thickness of the adhesive layer is 5 microns to 100 microns.

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