TWM633976U - Protection tape - Google Patents

Abstract

A protection tape includes a first substrate layer, an adhesive layer and a shrinkage layer. The shrinkage layer is located between the first substrate layer and the adhesive layer. The thermal expansion coefficient of the shrinkage layer at 180 DEG C is larger than or equal to 100 [mu]m/m DEG C and less than 400 [mu]m/m DEG C, and the hardness of the shrinkage layer is greater than the Shore 30A at 23 DEG C.

Description

protective tape

The present invention relates to a protective tape, and in particular to a protective tape including a shrink layer and a method of manufacturing a semiconductor device using the protective tape.

At present, semiconductor materials are widely used in many electronic devices, such as microelectromechanical systems (Microelectromechanical Systems), complementary metal oxide semiconductors (Complementary Metal Oxide Semiconductor), three-dimensional integrated circuits (3DIC), memory chips (Memories chip) , logic chip (Logic chip), power chip (Power chip), radio frequency chip (Radio Frequency chip), diode (diode), interposer (interposer) and so on. With the advancement of technology, semiconductor devices continue to develop in the direction of thinner, smaller, higher performance, and energy saving.

Fan-Out Wafer Level Packaging (FOWLP) is a technology that can effectively increase the bulk density of semiconductor devices. In the general fan-out wafer packaging process, rewiring is deposited on the glass substrate structure, and then package the chip on the aforementioned rewiring structure. However, the thermal expansion coefficient of the rewiring structure is different from that of the glass carrier, so, after depositing the rewiring structure Finally, the glass substrate is prone to warping and affects the yield of subsequent processes.

This new creation provides a protective tape that improves substrate warpage.

The present invention provides a method for manufacturing a semiconductor device, which can improve the warping problem of the substrate after depositing a conductive layer and an insulating layer.

At least one embodiment of the novel creation provides a protective tape. The protective tape includes a first base material layer, an adhesive layer and a shrinking layer. The shrink layer is located between the first substrate layer and the adhesive layer. The thermal expansion coefficient of the shrinking layer at 180°C is greater than or equal to 100 μm/m°C and less than 400 μm/m°C, and the hardness of the shrinking layer at 23°C is greater than 30A Shore hardness.

In some embodiments, the shrink layer has a flexural modulus of 1.45 MPa at 30°C and a flexural modulus of 0.19 MPa at 180°C.

In some embodiments, the flexibility of the first substrate layer is greater than the flexibility of the shrink layer.

In some embodiments, the material of the shrink layer includes acrylic resin, polyurethane resin, epoxy resin, polysiloxane resin or a combination of the above materials.

In some embodiments, the protective tape further includes a second substrate layer. The shrink layer is located between the first base material layer and the second base material layer, and the second base material layer is located between the shrink layer and the adhesive layer. The thermal expansion coefficient of the shrink layer at 180°C is greater than the thermal expansion coefficient of the first substrate layer at 180°C and the thermal expansion coefficient of the second substrate layer at 180°C.

In some embodiments, the material of the first substrate layer and the material of the second substrate layer include polyethylene terephthalate, polyurethane, polyethersulfone, polyethylene naphthalate, polyimide , polyetherimide, polyether ether ketone or a combination of the above materials.

In some embodiments, the shrink layer is composed of raw materials, and the raw materials include oligomers, monomers and initiators, wherein the oligomers include epoxy acrylate, polyester acrylate, polyurethane acrylate, polyether acrylate or In combination, the monomers include monofunctional monomers, difunctional monomers, multifunctional monomers or combinations thereof, and the initiator includes free radical initiators or cationic initiators.

In some embodiments, in the raw material of the shrink layer, the weight ratio of the oligomer is greater than or equal to 40wt%, the weight ratio of the monomer is 20wt% to 50wt%, and the weight ratio of the initiator is less than or equal to 10wt%.

In some embodiments, the first substrate layer has a thickness of 25 microns to 200 microns, the shrink layer has a thickness of 25 microns to 500 microns, and the adhesive layer has a thickness of 5 microns to 100 microns.

At least one embodiment of the new creation provides a method of manufacturing a semiconductor device, including attaching a protective tape to a first surface of a substrate, depositing at least a first conductive layer on a second surface of the substrate opposite to the first surface, and at least A first insulating layer and the first conductive layer and the first insulating layer are lifted from the base. The protective tape includes a first base material layer, an adhesive layer and a shrinking layer. The shrink layer is located between the first substrate layer and the adhesive layer. The thermal expansion coefficient of the shrinking layer at 180°C is greater than or equal to 100 μm/m°C and less than 400 μm/m°C, and the hardness of the shrinking layer at 23°C is greater than 30A Shore hardness.

In some embodiments, the method of manufacturing a semiconductor device further includes: Remove the protective tape at the bottom; paste another protective tape on the first side of the substrate, wherein the thermal expansion coefficient of another shrinkage layer of the another protective tape is greater than that of the shrinkable layer of the protective tape at 180° C. thermal expansion coefficient of 180°C; depositing at least one second conductive layer and at least one second insulating layer on the first conductive layer and the first insulating layer; removing the other protective tape from the substrate; placing the first conductive layer, The first insulating layer, the second conductive layer and the second insulating layer are taken from the base.

In some embodiments, the method for manufacturing a semiconductor device further includes: pasting another protective tape on the first substrate layer of the protective tape; depositing at least one second layer on the first conductive layer and the first insulating layer; a conductive layer and at least one second insulating layer; removing the other protective tape and the protective tape from the base; taking the first conductive layer, the first insulating layer, the second conductive layer and the second insulating layer from the base .

In some embodiments, the another adhesive layer of the another protective tape has a lower viscosity than the adhesive layer of the protective tape.

In some embodiments, the protective tape is cut after the protective tape is applied to the first side of the substrate.

In some embodiments, the method for manufacturing a semiconductor device further includes: after attaching the protective tape to the first surface of the substrate, placing the protective tape on a suction cup.

In some embodiments, the manufacturing method of the semiconductor device further includes: before depositing the first conductive layer and the first insulating layer, forming a release layer on the second surface of the substrate, and depositing the first conductive layer and the first insulating layer on On the release layer.

In some embodiments, the method for manufacturing a semiconductor device further includes: and irradiating the release layer to separate the first conductive layer and the first insulating layer from the base.

1: Semiconductor device

10,10a,10a': Protective tape

12A, 12A': the first substrate layer

12B, 12B': second substrate layer

14,14': shrinkage layer

16,16': Adhesive layer

20: Release layer

100: base

100a: first side

100b: Second side

120: the first conductive layer

130: the first insulating layer

140: second conductive layer

142: micro bump

150: second insulating layer

210: chip

220: Pad

230: Bottom filling material

240: Packaging material

250: Connecting terminal

CK: suction cup

CL: cutting line

F, F': contraction force

RDL: Rewiring Structure

T1, T2, T3, T4: Thickness

Fig. 1 is a schematic cross-sectional view of a protective tape according to an embodiment of the present invention.

Fig. 2 is a schematic cross-sectional view of a protective tape according to an embodiment of the present invention.

3A to 3I are schematic cross-sectional views of a method for manufacturing a semiconductor device according to an embodiment of the present invention.

4A to 4E are schematic cross-sectional views of a method for manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 1 is a schematic cross-sectional view of a protective tape according to an embodiment of the present invention.

Please refer to FIG. 1 , the protective tape 10 includes a first substrate layer 12A, an adhesive layer 16 and a shrinkable layer 14 . The shrink layer 14 is located between the first base material layer 12A and the adhesive layer 16 . In some embodiments, before using the protective tape 10 , the protective tape 10 is disposed on the release layer 20 , wherein the adhesive layer 16 faces the release layer 20 . When the protective tape 10 is to be used, the protective tape 10 is torn off from the release layer 20 , and then the protective tape 10 is attached to other positions.

In some embodiments, the material of the first substrate layer 12A includes polyethylene terephthalate (Polyethylene terephthalate, PET), polyurethane (Polyurethane, PU), polyethersulfones (Polyethersulfones, PES), polyethylene naphthalate Ethylene glycol ester (Polyethylene naphthalate, PEN), polyimide (Polyimide, PI), polyetherimide (Polyetherimide, PEI), polyether ether ketone (Polyetheretherketone, PEEK), the combination of the above materials or other suitable Material. In the embodiment where the first base material layer 12A is polyurethane, the first base material layer 12A can be selected from thermoplastic polyurethane, but the present invention is not limited thereto. In the embodiment where the first substrate layer 12A is polyimide, the first substrate layer 12A may be transparent polyimide, but the present invention is not limited thereto. In some embodiments, the first substrate layer 12A is, for example, a rollable material layer, and the manufacturing method of the first substrate layer 12A includes, for example, extraction molding, coating or other suitable processes. The thickness T1 of the first substrate layer 12A is, for example, 25 microns to 200 microns.

The shrink layer 14 is located on the first substrate layer 12A. In this embodiment, the protective tape 10 has a high coefficient of thermal expansion (eg, greater than or equal to 100 μm/m°C and less than 400 μm/m°C) at high temperature (eg, 180°C). For example, the thermal expansion coefficient of the shrinkage layer 14 at 180°C is 100 μm/m°C to 150 μm/m°C, 150 μm/m°C to 200 μm/m°C, 200 μm/m°C to 250 μm/m°C, 250 μm/m°C to 300 μm /m °C, 300 μm/m °C to 350 μm/m °C or above 350 μm/m °C. In some embodiments, the coefficient of thermal expansion of the shrink layer 14 at 180°C is greater than the coefficient of thermal expansion of the first substrate layer 12A at 180°C. In some embodiments, shrink layer 14 has a flexural modulus of 1.45 MPa at 30°C and a flexural modulus of 0.19 MPa at 180°C.

In some embodiments, the flexibility of the first substrate layer 12A is greater than the flexibility of the shrink layer 14 . In other words, the first substrate layer 12A is made of a relatively flexible material, while the shrinkage layer 14 is made of a relatively rigid material. In some embodiments, the shrinkage layer 14 has a hardness greater than Shore hardness 30A at 23 degrees Celsius, such as Shore hardness 30A to 50A, 50A to 75A, or 75A to 100A, thereby preventing the substrate from warping after the rewiring structure is deposited. song problem.

In some embodiments, the material of the shrink layer 14 includes acrylic resin, polyurethane resin, epoxy resin, polysiloxane resin, a combination of the above materials or other suitable polymer materials.

The thickness T2 of the shrink layer 14 is, for example, 25 micrometers to 500 micrometers. In some embodiments, the shrink layer 14 is directly formed on the first substrate layer 12A by coating, printing, hot-melt extrusion or other suitable processes.

In some embodiments, the shrink layer 14 is composed of raw materials including oligomers, monomers and initiators.

The oligomers in the raw materials constituting the shrinking layer 14 constitute the main body of the shrinking layer 14 , and the oligomers determine the main properties of the shrinking layer 14 after curing. In some embodiments, in the raw materials of the shrinking layer 14 , the weight ratio of the oligomer is greater than or equal to 40wt%, such as 40wt% to 80wt%. In some embodiments, the oligomer includes epoxy acrylate, polyester acrylate, urethane acrylate, polyether acrylate, or combinations thereof. Table 1 compares the properties of the shrink layer 14 composed of different oligomers.

Table 1

It can be known from Table 1 that in order to obtain a relatively hard shrinkage layer 14 , the oligomer is preferably epoxy acrylate and/or polyester acrylate. For example, the oligomer is selected from one or more than one epoxy acrylate or polyester acrylate, and the weight average molecular weight of the oligomer is 1,000 to 100,000, and in the raw material of the shrink layer 14, the oligomer The weight ratio is greater than or equal to 40wt%, 50wt%, 60wt% or 70wt%. Based on the above, the shrinkage layer 14 has the advantages of high rigidity, high tensile strength and wear resistance.

It should be noted that Table 1 provides the effect of different oligomers on the properties of the shrink layer 14, but it is not intended to limit the application. In fact, the properties of the shrink layer 14 may also vary due to other factors.

The monomers in the raw materials constituting the shrink layer 14 are suitable for adjusting the viscosity and will participate in the polymerization reaction. The amount of monomer in the raw material will also affect the performance of the cured shrink layer 14 . In some embodiments, in the raw material of the shrink layer 14 , the weight ratio of the monomer is 20wt% to 50wt%. In some embodiments, monomers include monofunctional monomers, Difunctional monomers, multifunctional monomers, or combinations thereof.

In some embodiments, the monofunctional monomer is, for example, Isodecyl acrylate (IDA) or tetrahydrofurfuryl acrylate (Tetrahydrofurfuryl acrylate, THFA), wherein the chemical structures of decayl acrylate and tetrahydrofurfuryl methyl acrylate are as follows Chemical formula 1 and chemical formula 2 show.

In some embodiments, the bifunctional monomer is, for example, hexanediol diacrylate (Hexanediol diacrylate, HDDA), wherein the chemical structure of hexanediol diacrylate is shown in Chemical Formula 3 below.

In some embodiments, the multifunctional monomer is, for example, trimethylolpropane triacrylate (TMPTA) or dipentaerythritol hexaacrylate (Dipentaerythritol Hexaacrylate, DPHA), wherein The chemical structures of trimethylolpropane triacrylate and dipentaerythritol hexaacrylate are shown in Chemical Formula 4 and Chemical Formula 5 respectively.

Table 2 compares the effect of increasing the number of functional groups of the monomers on the properties of the formed shrink layer 14 and the effect of increasing the chain length of the monomers on the properties of the formed shrink layer 14 .

It can be seen from Table 2 that in order to obtain a relatively hard shrinkage layer 14 , the monomer is preferably a bifunctional and/or multifunctional monomer. For example, the monomer is selected from one or more bifunctional monomers and multifunctional monomers, and in the raw materials of the shrink layer 14, the weight ratio of the monomers is greater than 20wt%, greater than 30wt%, or greater than 40wt% %, so as to regulate the formula and improve the wettability of the substrate. In addition, after curing (such as UV curing), the bridging density of the structure can be increased, and rigidity can be imparted to the material, so that the hardness of the shrinkage layer 14 after curing can be increased.

It should be noted that Table 2 provides the effect of adjusting monomers on the properties of the shrink layer 14, but it is not intended to limit the application. In fact, the properties of the shrink layer 14 may also vary due to other factors.

The initiator in the raw materials constituting the shrink layer 14 is suitable for initiating polymerization and bridging reactions. For example, one or more initiators are used to cause polymerization and bridging reactions of monomers and oligomers. In some embodiments, the initiator includes a free radical initiator or a cationic initiator. In some embodiments, in the raw material of shrinkage layer 14, the weight ratio of the initiator is less than or equal to 10wt%, such as less than or equal to 9wt%, 8wt%, 7wt%, 6wt%, 5wt%, 4wt%, 3wt%, 2wt% or 1wt%. In some embodiments, the initiator is a photoinitiator, and it is suitable for absorbing ultraviolet light to initiate a polymerization reaction, but the present invention is not limited thereto. In other embodiments, shrink layer 14 may be a thermosetting material.

In some embodiments, polyester acrylate resins use free radical photocatalysts An initiator, such as 1-hydroxycyclohexyl phenyl ketone (1-hydroxycyclohexyl phenyl ketone), has a chemical structure as shown in Chemical Formula 6.

In some embodiments, the epoxy acrylate resin uses a cationic photoinitiator, such as diphenyl (4-phenylthio) phenylsulfonium hexafluoroantimonate (Diphenyl (4-phenylthio) phenyl sulfonium hexafluoroantimonate) and / or (Thiodi-4,1-phenylene)bis(diphenylsulfonium)dihexafluoroimidate ((Thiodi-4,1-phenylene)bis(diphenylsulfonium)dihexafluoroatimonate), the chemical structures are as follows Chemical formula 7 and chemical formula 8.

In some embodiments, the raw materials constituting the shrink layer 14 also include additives. Additives are, for example, surfactants, stabilizers, dyes, solvents or other materials. exist In some embodiments, in the raw material of shrinkage layer 14, the weight ratio of the additive is 0wt% to 10wt%, such as 9wt%, 8wt%, 7wt%, 6wt%, 5wt%, 4wt%, 3wt%, 2wt% or 1wt%.

In one embodiment, the raw materials of the shrink layer 14 include oligomers, monomers, photoinitiators and additives, wherein the weight ratio of oligomers is greater than 50wt%, and the weight ratio of monomers is 20wt% to 40wt%. The weight ratio of the initiator is less than 10wt%, and the weight ratio of the additive is less than 5wt%. In the aforementioned embodiments, the oligomers include bisphenol A epoxy diacrylate (Bisphenol A Epoxy Diacrylate) and polyester diacrylate (Polyester diacrylate), and the monomers include tetrahydrofurfuryl acrylate (Tetrahydrofurfuryl acrylate, THFA) and acetonitrile. Diol diacrylate (Hexanediol diacrylate, HDDA), photoinitiators include 1-hydroxycyclohexyl phenyl ketone (1-hydroxycyclohexyl phenyl ketone) and phenyl bis (2,4,6-trimethylbenzoyl ) phosphine oxide (phenyl bis(2,4,6-trimethylbenzoyl)-phosphine oxide), and the additive is γ-Mercaptopropyltrimethoxysilane (γ-Mercaptopropyltrimethoxysilane).

The adhesive layer 16 is located on the shrink layer 14 . In some embodiments, the adhesiveness of the adhesive layer 16 is greater than the adhesiveness of the shrink layer 14 . The adhesive layer 16 is, for example, pressure-sensitive adhesive. In some embodiments, the material of the adhesive layer 16 includes acrylic resin, polyurethane resin, polysiloxane resin, a combination of the above materials, or other suitable polymer materials.

In some embodiments, the adhesive layer 16 includes a photosensitive material, and the adhesive layer 16 can reduce the adhesive force after being irradiated with light (such as ultraviolet light), so that the protective tape 10 can be debonded through the light. In some embodiments, the adhesive layer 16 includes a thermosetting material, and the adhesive The adhesive force of the layer 16 will be reduced after being heated, so that the protective tape 10 can be degummed through heating. In some embodiments, the adhesive layer 16 includes a pyrolytic material, and cooling the adhesive layer 16 below the glass transition temperature will reduce the adhesive force, so that the protective tape 10 can pass through the cryogenic gel.

The thickness T3 of the adhesive layer 16 is, for example, 5 microns to 100 microns. In some embodiments, the adhesive layer 16 is directly formed on the shrink layer 14 by coating, printing or other suitable processes.

The adhesive layer 16 is suitable for adhering the protective tape 10 to an object (such as a substrate). Adhesion methods of the adhesive layer 16 and other materials include physical adsorption (Adsorption), diffusion, electrostatic adsorption, mechanical interlocking and chemical bonding. Physical adsorption is, for example, by involving van der Waals forces or hydrogen bond adsorption. Diffusion is, for example, a phenomenon of mutual diffusion at the interface between the adhesive layer 16 and the object to be attached when the temperature is higher than the glass transition temperature of the adhesive layer 16 . The mechanical interlocking is, for example, performing physical or chemical treatment on the surface of the sticker to roughen the surface of the sticker so that the adhesive layer 16 can be engaged with the rough surface of the sticker.

In order to make the adhesive layer 16 can be better bonded with the object to be stuck, the rigidity of the adhesive layer 16 can not be too high, so that the adhesive layer 16 can fill all the slits on the surface of the object to be stuck, so as to enhance the adhesion between the adhesive layer 16 and the object to be pasted. The contact area between the surfaces of objects.

In this embodiment, the bridging density of the shrinkage layer 14 is greater than the bridging density of the adhesive layer 16, the weight average molecular weight of the shrinkage layer 14 is greater than the weight average molecular weight of the adhesive layer 16, and the glass transition temperature of the shrinkage layer 14 is greater than that of the adhesive layer 16. temperature.

In some embodiments, the shrinkage layer 14 has a weight average molecular weight of 400,000 to 800,000 g/mol, and the weight average molecular weight of the adhesive layer 16 is 10,000 to 1,200,000 g/mol. In some embodiments, the glass transition temperature of the shrink layer 14 is greater than 20°C, and the glass transition temperature of the adhesive layer 16 is less than 20°C. For example, when using a protective tape 10 that can be degummed through light or heat, the glass transition temperature of the adhesive layer 16 is less than -20°C, such as -20°C to -60°C. When the adhesive tape 10 is used, the glass transition temperature of the adhesive layer 16 is less than 20°C, for example -10°C to 10°C.

The release layer 20 can be any release material. For example, the release layer 20 is polyethylene terephthalate (PET), polyolefins (PO) or release paper. The thickness of the release layer 20 is, for example, 25 microns to 175 microns.

Fig. 2 is a schematic cross-sectional view of a protective tape according to an embodiment of the present invention. It must be noted here that the embodiment in FIG. 2 follows the component numbers and part of the content of the embodiment in FIG. 1 , wherein the same or similar numbers are used to denote the same or similar components, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, and details are not repeated here.

The main difference between the protective tape 10 a of FIG. 2 and the protective tape 10 of FIG. 1 is that the protective tape 10 a further includes a second base material layer 12B.

Please refer to FIG. 2 , the protective tape 10 a includes a first substrate layer 12A, a second substrate layer 12B, an adhesive layer 16 and a shrinkage layer 14 . The shrink layer 14 is located between the first base layer 12A and the second base layer 12B, and the second base layer 12B is located between the shrink layer 14 and the adhesive layer 16 . In some embodiments, the temperature of the second substrate layer 12B at 30°C The flexural modulus was 1.4 GPa, and the flexural modulus at 180° C. was 0.18 GPa.

In some embodiments, the materials of the first substrate layer 12A and the second substrate layer 12B include polyethylene terephthalate, polyurethane, polyethersulfone, polyethylene naphthalate, polyimide , polyetherimide, polyether ether ketone, a combination of the above materials or other suitable materials. In the embodiment where the second substrate layer 12B is polyurethane, the second substrate layer 12B can be selected from thermoplastic polyurethane, but the present invention is not limited thereto. In the embodiment where the second base material layer 12B is polyimide, the second base material layer 12B can be selected from transparent polyimide. In some embodiments, the first substrate layer 12A and the second substrate layer 12B are, for example, rollable material layers, and the manufacturing methods of the first substrate layer 12A and the second substrate layer 12B include, for example, extraction molding, coating cloth or other suitable process. The thickness T1 of the first substrate layer 12A and the thickness T4 of the second substrate layer 12B are, for example, 25 micrometers to 200 micrometers.

The first substrate layer 12A and the second substrate layer 12B may include the same or different materials. In some embodiments, the coefficient of thermal expansion of the second substrate layer 12B at 180°C is greater than the coefficient of thermal expansion of the first substrate layer 12A at 180°C.

In some embodiments, the thermal expansion coefficient of the shrink layer 14 at 180°C is greater than the thermal expansion coefficient of the first substrate layer 12A at 180°C and the thermal expansion coefficient of the second substrate layer 12B at 180°C.

Table 3 shows the effects of changing the thickness T1 of the first substrate layer 12A, the thickness T2 of the shrinkage layer 14 and the thickness T4 of the second substrate layer 12B on the warpage of the protective tape 10a. It should be noted that Table 3 shows the degree of warpage after heat treatment when the protective tape 10a is not attached to other devices. In Example 1 In Example 9, the material of the first substrate layer 12A is polyethylene terephthalate, the material of the shrink layer 14 is acrylic resin, and the material of the second substrate layer 12B is polyethylene terephthalate Ethylene glycol.

In Example 1 to Example 4 in Table 3, the thinner the thickness of the shrinkage layer 14, the protective tape 10a tends to be more curved after the heat treatment at 150°C. In addition, in Embodiment 1 to Embodiment 4, since the thermal expansion coefficient of the second base material layer 12B is greater than that of the first base material layer 12A, the protective tape 10a tends to warp toward the second base material layer 12B.

In addition, from Example 5 to Example 8 in Table 3, it can be known that when the thickness of the first base material layer 12A and the second base material layer 12B are consistent with the material, the thickness of the shrinkage layer 14 has a significant effect on the temperature of the protective tape 10a at 200°C. The degree of warpage after heat treatment does not have much effect. In addition, in Examples 5 to 8, the protective tape 10a was warped in random directions.

In addition, in Example 9 in Table 3, after heat treatment at 150°C, although the thermal expansion coefficient of the first base material layer 12A is low, the bending modulus of the material is relatively large, so that the protective tape 10a is easy to move toward the first base material layer 12A. direction warping. After the heat treatment at 200° C., the overall internal stress decreases because the flexural modulus of the first base material layer 12A decreases, causing the protective tape 10 a to warp toward the second base material layer 12B with a larger thermal expansion coefficient. In other words, in Example 9, the warping direction of the protective tape 10a after heat treatment at 150°C was different from that of the protective tape 10a after heat treatment at 200°C.

Table 4 provides the thermal expansion coefficient and glass transition temperature (Tg) in the MD direction (film-drawing direction) of the shrinkage layer and some second substrate layers.

Table 5 provides the thermal expansion coefficients and glass transition temperatures (Tg) in the TD direction (perpendicular to the film-drawing direction) of the first substrate layer, the shrinkage layer, and some second substrate layers.

In Table 4 and Table 5, the material of the shrink layer is acrylic resin, and the material of the second substrate layer is polyethylene terephthalate. In addition, in Table 5, the material of the first base material layer is polyimide with high heat resistance and thermal stability.

3A to 3I are schematic cross-sectional views of a method for manufacturing a semiconductor device according to an embodiment of the present invention. It must be noted here that the embodiment in Fig. 3A to Fig. 3I follows the component numbers and part of the content of the embodiment in Fig. 2, wherein the same or similar symbols are used to indicate the same or similar components, and the same technical content is omitted. illustrate. For the description of the omitted part, reference may be made to the foregoing embodiments, and details are not repeated here.

Referring to FIG. 3A , a substrate 100 is provided. The base 100 is, for example, a carrier substrate, and its material includes glass, semiconductor, metal or other suitable materials. The substrate 100 includes a first surface 100a and a second surface 100b opposite to the first surface 100a. In some embodiments, the substrate 100 has a thickness of 700 microns to 1100 microns.

The protective tape 10a is pasted on the first surface 100a of the substrate 100 . In this implementation In one example, the hardness of the protective tape 10 a at room temperature (eg, 23° C.) is greater than 30 A on Shore hardness, thus helping to reduce the warpage of the substrate 100 .

In some embodiments, the area of the protective tape 10a is larger than the area of the first side 100a of the substrate 100 . After the protective tape 10a larger than the substrate 100 is pasted on the first surface 100a of the substrate 100, the protective tape 10a and the substrate 100 are trimmed and aligned along the cutting line CL through a cutting process. Therefore, when affixing the protective tape 10a to the substrate 100 (the step shown in FIG. 3B ), it is not necessary to accurately align the protective tape 10a and the substrate 100 .

In addition, it should be noted that although this embodiment takes the protective tape 10a in FIG. 2 as an example, the present invention is not limited thereto. In other embodiments, the protective tape 10 of FIG. 1 is pasted on the first surface 100 a of the substrate 100 .

Please refer to FIG. 3B , place the protective tape 10a on the suction cup CK. In some embodiments, the suction cup CK absorbs the first substrate layer 12A of the protective tape 10a by electrostatic force, vacuum force or other means.

A release layer 102 is formed on the second surface 100 b of the substrate 100 . The release layer 102 is formed entirely on the second surface 100b. The release layer 102 includes, for example, an organic material. The method of forming the release layer 102 includes coating, doctor blade or other suitable processes.

Referring to FIG. 3C , at least one first conductive layer 120 and at least one first insulating layer 130 are deposited on the second surface 100 b of the substrate 100 . In this embodiment, multiple first conductive layers 120 and multiple first insulating layers 130 are deposited on the second surface 100 b of the substrate 100 . In this embodiment, the first conductive layer 120 and the first insulating layer 130 are deposited on the release layer 102 . In some embodiments, the closest part of the first conductive layer 120 A layer near the substrate 100 is an under bump metallurgy (UBM) layer.

In some embodiments, the method of depositing the first conductive layer 120 includes, for example, physical vapor deposition, chemical vapor deposition, electroplating, sputtering, or other suitable deposition processes, and the method of depositing the first insulating layer 130 includes, for example, physical vapor deposition. phase deposition, chemical vapor deposition, spin coating, or other suitable deposition processes. In some embodiments, the shape of the first conductive layer 120 and the shape of the first insulating layer 130 are defined through a lithography process and an etching process.

In some embodiments, the process of forming the first conductive layer 120 and the first insulating layer 130 includes a high temperature process (eg, a process with a temperature higher than 180° C.). Since the coefficient of thermal expansion of the first conductive layer 120 and/or the first insulating layer 130 is higher than that of the substrate 100, when the substrate 100 drops from high temperature to room temperature, the second surface 100b of the substrate 100 may 120 and/or the first insulating layer 130 shrink to produce a shrinkage force F that tends to warp the substrate 100 upward.

In some embodiments, since the thermal expansion coefficient of the protective tape 10a is higher than that of the first conductive layer 120 and the first insulating layer 130, the shrinkage force F' generated by the shrinkage of the protective tape 10a can prevent the shrinkage force F from causing the substrate 100 warps upwards, even making the substrate 100 prone to warping downwards. Since the suction cup CK exerts a downward force on the substrate 100 to absorb the substrate 100 , the substrate 100 warped downward is more likely to be absorbed by the suction cup CK than the substrate 100 warped upward. In some embodiments, the thermal expansion coefficient of the shrink layer 14 of the protective tape 10a at 180°C is greater than the thermal expansion coefficients of the first conductive layer 120 and the first insulating layer 130 at 180°C. In some embodiments, in addition to the shrink layer 14, the first substrate layer 12A of the protective tape 10a and The thermal expansion coefficient of the second substrate layer 12B at 180° C. is also greater than the thermal expansion coefficients of the first conductive layer 120 and the first insulating layer 130 at 180° C., thereby further preventing the substrate 100 from warping upward.

In this embodiment, three layers of the first conductive layer 120 and two layers of the first insulating layer 130 are formed, wherein after each layer of the first conductive layer 120 or the first insulating layer 130 is formed, the shrinkage force F gradually increases. It should be noted that this embodiment is an example of forming three first conductive layers 120 and two first insulating layers 130 , but the present invention is not limited thereto. The quantities of the first conductive layer 120 and the first insulating layer 130 can be adjusted according to actual needs.

As the contraction force F increases, the substrate 100 may shift from a tendency to warp downward to warp upward. After the contraction force F is large to a certain extent, in order to prevent the substrate 100 from warping upwards and detaching from the suction cup CK, the substrate 100 and the protective tape 10a are removed from the suction cup CK, and another adhesive tape is pasted on the first surface 100a of the substrate 100. The protective tape 10a' is shown in Fig. 3D to Fig. 3E.

Referring to FIG. 3D , after the substrate 100 and the protective tape 10 a are lifted from the suction cup CK, the protective tape 10 a is removed from the substrate 100 .

Referring to FIG. 3E , another protective tape 10a' is pasted on the first surface 100a of the substrate 100 . The protective tape 10a' includes a first substrate layer 12A', a second substrate layer 12B', an adhesive layer 16' and a shrink layer 14'. The protective tape 10a' has a larger coefficient of thermal expansion than the protective tape 10a. In some embodiments, the shrink layer 14' of the protective tape 10a' has a coefficient of thermal expansion at 180°C that is greater than the coefficient of thermal expansion of the shrink layer 14 of the protective tape 10a at 180°C. In some embodiments, the first substrate layer 12A' of the protective tape 10a' And the thermal expansion coefficient of the second substrate layer 12B' at 180°C is greater than the thermal expansion coefficients of the first substrate layer 12A and the second substrate layer 12B of the protective tape 10a at 180°C.

In some embodiments, the original area of the protective tape 10a' is larger than that of the substrate 100, and after the protective tape 10a' is attached to the substrate 100, the protective tape 10a' is trimmed and aligned with the substrate 100 through a cutting process.

In some embodiments, by adjusting the material or thickness of the first substrate layer, the second substrate layer, and the shrinkage layer, the protective tape 10a' is easier to generate the shrinkage force F' on the substrate 100 than the protective tape 10a.

In some embodiments, the shrinkage layer 14' has a hardness greater than 30A Shore hardness at 23 degrees Celsius, such as 30A to 50A, 50A to 75A, or 75A to 100A, so that the warpage of the substrate 100 can be suppressed.

After the protective tape 10a' is attached to the substrate 100, the protective tape 10a' is placed on the suction cup CK. In some embodiments, the suction cup CK absorbs the first substrate layer 12A' of the protective tape 10a' by electrostatic force, vacuum force or other means.

Referring to FIG. 3E , at least one second conductive layer 140 and at least one second insulating layer 150 are deposited on the first conductive layer 120 and the first insulating layer 130 . Micro bumps 142 are formed on the outermost second conductive layer 140 .

In some embodiments, the method of depositing the second conductive layer 140 includes, for example, physical vapor deposition, chemical vapor deposition, electroplating, sputtering, or other suitable deposition processes, and the method of depositing the second insulating layer 150 includes, for example, physical vapor deposition. phase deposition, chemical vapor deposition, spin coating, or other suitable deposition processes. In some embodiments, the shape of the second conductive layer 140 is defined through a lithography process and an etching process and The shape of the second insulating layer 150 .

In some embodiments, the process of forming the second conductive layer 140 and the second insulating layer 150 includes a high temperature process (eg, a process with a temperature higher than 180° C.). Since the coefficient of thermal expansion of the first conductive layer 120, the first insulating layer 130, the second conductive layer 140 and/or the second insulating layer 150 is higher than that of the substrate 100, when the substrate 100 drops from high temperature to room temperature, the substrate 100 The second surface 100 b of the substrate 100 may tend to warp upward due to the contraction force F due to the shrinkage of the first conductive layer 120 , the first insulating layer 130 , the second conductive layer 140 and/or the second insulating layer 150 .

In some embodiments, since the thermal expansion coefficient of the protective tape 10a' is higher than that of the first conductive layer 120, the first insulating layer 130, the second conductive layer 140 and/or the second insulating layer 150, the protective tape 10a The 'shrinkage force F' can prevent the shrinkage force F from causing the substrate 100 to warp upwards, or even to warp the substrate 100 downwards. In some embodiments, the thermal expansion coefficient of the shrink layer 14' of the protective tape 10a' at 180°C is greater than that of the first conductive layer 120, the first insulating layer 130, the second conductive layer 140 and/or the second insulating layer 150 at 180°C. coefficient of thermal expansion. In some embodiments, in addition to the shrinkage layer 14', the thermal expansion coefficients of the first base material layer 12A' and the second base material layer 12B' of the protective tape 10a' are also greater than the first conductive layer 120, the first base material layer 12B' at 180°C. The thermal expansion coefficient of the insulating layer 130 , the second conductive layer 140 and/or the second insulating layer 150 is 180° C., thereby further preventing the substrate 100 from warping upward.

It should be noted that this embodiment takes the formation of a second conductive layer 140 and a second insulating layer 150 as an example, but the present invention is not limited thereto. The quantity of the second conductive layer 140 and the second insulating layer 150 can be adjusted according to actual needs. all.

In this embodiment, the redistribution structure RDL on the substrate 100 includes a first conductive layer 120 , a first insulating layer 130 , a second conductive layer 140 and a second insulating layer 150 , but the present invention is not limited thereto. The redistribution structure RDL on the substrate 100 may further include other conductive layers and insulating layers.

Referring to FIG. 3F , one or more wafers 210 are bonded to the micro-bumps 142 . For example, the pads 220 of the chip 210 are connected to the redistribution structure RDL through the micro-bumps 142 .

Referring to FIG. 3G , an underfill material 230 is formed around the pad 220 and the micro-bump 142 to protect the contact between the chip 210 and the redistribution structure RDL. Then an encapsulation material 240 is formed to encapsulate the chip 210 on the redistribution structure RDL. The encapsulant 240 contacts the die 210 and the redistribution structure RDL.

3H, the substrate 100 and the protective tape 10a' are picked up from the suction cup CK, and then the protective tape 10a' is removed from the substrate 100.

Referring to FIG. 3I , the wafer 210 and the first conductive layer 120 , the first insulating layer 130 , the second conductive layer 140 and the second insulating layer 150 of the redistribution structure RDL are picked up from the substrate 100 . In some embodiments, the release layer 102 is irradiated with laser to separate the first conductive layer 120 and the first insulating layer 130 of the redistribution structure RDL from the substrate 100 .

Next, the connection terminals 250 are formed on the first conductive layer 120 . The connection terminals 250 are, for example, solder balls or other suitable materials. So far, the semiconductor device 1 is substantially completed.

In this embodiment, protection is used in the process of manufacturing the semiconductor device 1 Adhesive tape 10a and protective tape 10a', but the present invention is not limited thereto. In other embodiments, more than three different protective tapes may be used in the process of manufacturing the semiconductor device 1 to form more conductive layers and insulating layers on the substrate 100 .

4A to 4E are schematic cross-sectional views of a method for manufacturing a semiconductor device according to an embodiment of the present invention. It must be noted here that the embodiment in FIGS. 4A to 4E follows the component numbers and part of the content in the embodiment in FIGS. A description of the technical content. For the description of the omitted part, reference may be made to the foregoing embodiments, and details are not repeated here.

Please refer to FIG. 4A , following the step in FIG. 3C , after the shrinkage force F is large to a certain extent, in order to prevent the substrate 100 from warping upward and detaching from the suction cup CK, the substrate 100 and the protective tape 10a are lifted from the suction cup CK, and Another protective tape 10a' is pasted on the first substrate layer 12A of the protective tape 10a. Then the protective tape 10a' is placed on the suction cup CK. In other words, in this embodiment, after the protective tape 10a is picked up from the suction cup CK, the protective tape 10a is not removed from the substrate 100 .

In some embodiments, the original area of the protective tape 10a' is larger than the area of the protective tape 10a, and after the protective tape 10a' is attached to the protective tape 10a, the protective tape 10a' and the protective tape 10a are trimmed and aligned by a cutting process. allow.

Next, referring to FIG. 4B , at least one second conductive layer 140 and at least one second insulating layer 150 are deposited on the first conductive layer 120 and the first insulating layer 130 . Micro-bumps 142 are formed on the outermost second conductive layer 140 .

In this embodiment, the protective tape 10a and the protective tape 10a' are at 180 The coefficients of thermal expansion in °C are greater than those of the first conductive layer 120, the first insulating layer 130, the second conductive layer 140 and/or the second insulating layer 150 at 180 °C. Therefore, after the second conductive layer 140 and the second insulating layer 150 are deposited, the shrinkage force F' generated by the protective tape 10a and the protective tape 10a' can prevent the substrate 100 from being damaged by the second conductive layer 140 and the second insulating layer 150. Warping occurs due to contraction force F.

In some embodiments, the adhesive layer 16' of the protective tape 10a' is less viscous than the adhesive layer 16 of the protective tape 10a, so the protective tape 10a' can be prevented from tearing the protective tape 10a from the substrate 100.

Referring to FIG. 4C , one or more wafers 210 are bonded to the micro-bumps 142 . For example, the pads 220 of the chip 210 are connected to the redistribution structure RDL through the micro-bumps 142 . An underfill 230 is formed around the pads 220 and the micro-bumps 142 to protect the contact between the chip 210 and the redistribution structure RDL. Then an encapsulation material 240 is formed to encapsulate the chip 210 on the redistribution structure RDL. The encapsulant 240 contacts the die 210 and the redistribution structure RDL.

Next, please refer to FIG. 4D , the substrate 100, the protective tape 10a' and the protective tape 10a are picked up from the suction cup CK, and then the protective tape 10a' and the protective tape 10a are removed from the substrate 100.

Referring to FIG. 4E , the wafer 210 and the first conductive layer 120 , the first insulating layer 130 , the second conductive layer 140 and the second insulating layer 150 of the redistribution structure RDL are picked up from the substrate 100 . In some embodiments, the release layer 102 is irradiated with laser to separate the first conductive layer 120 and the first insulating layer 130 of the redistribution structure RDL from the substrate 100 .

Next, the connection terminals 250 are formed on the first conductive layer 120 . The connection terminals 250 are, for example, solder balls or other suitable materials. So far, the semiconductor device 1 is substantially completed.

To sum up, the protective tape 10a and the protective tape 10a' can prevent the substrate 100 from warping, thereby improving the manufacturing yield of the semiconductor device 1 . In addition, the protective tape 10a and the protective tape 10a' have the advantages of high vacuum resistance, low pollution, heat resistance, and chemical resistance, which can make the processing of the semiconductor device 1 more stable. In addition, the protective tape 10a and the protective tape 10a' can be removed from the substrate 100 by UV degumming, heating degumming or cold degumming, so as to prevent the substrate 100 from cracking and keep the surface of the substrate 100 clean.

10: Protective tape

12A: the first substrate layer

14: shrink layer

16: Adhesive layer

20: Release layer

T1, T2, T3: Thickness

Claims (9)

A protective tape comprising: a first substrate layer; adhesive layer; and a shrinking layer, the shrinking layer is located between the first substrate layer and the adhesive layer, wherein the thermal expansion coefficient of the shrinking layer at 180°C is greater than or equal to 100 µm/m°C and less than 400 µm/m°C, and the The hardness of the shrinkage layer at 23° C. is greater than 30A in Shore hardness. The protective tape according to claim 1, wherein the flexural modulus of the shrink layer at 30°C is 1.45 MPa, and the flexural modulus at 180°C is 0.19 MPa. The protective tape according to claim 1, wherein the flexibility of the first substrate layer is greater than the flexibility of the shrink layer. The protective tape according to claim 1, wherein the shrink layer is made of acrylic resin, polyurethane resin, epoxy resin, polysiloxane resin or a combination of the above materials. The protective tape as described in claim item 1, further comprising: A second substrate layer, wherein the shrink layer is located between the first substrate layer and the second substrate layer, and the second substrate layer is located between the shrink layer and the adhesive layer , wherein the thermal expansion coefficient of the shrinkable layer at 180°C is greater than the thermal expansion coefficient of the first substrate layer at 180°C and the thermal expansion coefficient of the second substrate layer at 180°C. The protective tape as claimed in item 5, wherein the material of the first base material layer and the material of the second base material layer include polyethylene terephthalate, polyurethane, polyether sulfate, polyethylene naphthalate Glycol esters, polyimides, polyetherimides, polyether ether ketones, or combinations thereof. The protective tape as claimed in claim 1, wherein the shrink layer is composed of raw materials, the raw materials include oligomers, monomers and initiators, wherein the oligomers include epoxy acrylate, polyester acrylate , urethane acrylate, polyether acrylate or a combination thereof, the monomers include monofunctional monomers, difunctional monomers, multifunctional monomers or combinations thereof, and the initiator includes free radical initiators starter or cationic starter. The protective tape according to claim 7, wherein in the raw material of the shrink layer, the weight ratio of the oligomer is greater than or equal to 40 wt%, and the weight ratio of the monomer is 20 wt% to 50 wt% %, and the weight ratio of the initiator is less than or equal to 10wt%. The protective tape according to claim 1, wherein the thickness of the first substrate layer is 25 microns to 200 microns, the thickness of the shrinkage layer is 25 microns to 500 microns, and the thickness of the adhesive layer is 5 microns to 100 microns.

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