TWI821386B - 基板處理方法 - Google Patents
基板處理方法 Download PDFInfo
- Publication number
- TWI821386B TWI821386B TW108131778A TW108131778A TWI821386B TW I821386 B TWI821386 B TW I821386B TW 108131778 A TW108131778 A TW 108131778A TW 108131778 A TW108131778 A TW 108131778A TW I821386 B TWI821386 B TW I821386B
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- TW
- Taiwan
- Prior art keywords
- film
- substrate
- pattern
- reaction layer
- silicon
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 122
- 238000003672 processing method Methods 0.000 title claims abstract description 17
- 238000012545 processing Methods 0.000 claims abstract description 175
- 238000006243 chemical reaction Methods 0.000 claims abstract description 76
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 76
- 238000005530 etching Methods 0.000 claims description 61
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 55
- 229910052710 silicon Inorganic materials 0.000 claims description 55
- 239000010703 silicon Substances 0.000 claims description 55
- 230000015572 biosynthetic process Effects 0.000 claims description 49
- -1 ammonium fluorosilicate Chemical compound 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract description 67
- 239000002344 surface layer Substances 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 305
- 235000012431 wafers Nutrition 0.000 description 148
- 239000007789 gas Substances 0.000 description 100
- 238000000034 method Methods 0.000 description 84
- 230000008569 process Effects 0.000 description 78
- 238000010586 diagram Methods 0.000 description 52
- 230000008859 change Effects 0.000 description 39
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 38
- 229910052799 carbon Inorganic materials 0.000 description 38
- 238000010438 heat treatment Methods 0.000 description 25
- 238000000231 atomic layer deposition Methods 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000002994 raw material Substances 0.000 description 11
- 229910003978 SiClx Inorganic materials 0.000 description 10
- 238000001179 sorption measurement Methods 0.000 description 9
- 239000003989 dielectric material Substances 0.000 description 8
- 238000009832 plasma treatment Methods 0.000 description 8
- 229910003910 SiCl4 Inorganic materials 0.000 description 7
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 230000015654 memory Effects 0.000 description 6
- 239000012495 reaction gas Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229910017855 NH 4 F Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 5
- 239000003112 inhibitor Substances 0.000 description 5
- 229920006395 saturated elastomer Polymers 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 229910017701 NHxFy Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000007781 pre-processing Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000007723 transport mechanism Effects 0.000 description 4
- 229910003902 SiCl 4 Inorganic materials 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- GIRKRMUMWJFNRI-UHFFFAOYSA-N tris(dimethylamino)silicon Chemical compound CN(C)[Si](N(C)C)N(C)C GIRKRMUMWJFNRI-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910003691 SiBr Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- OWKFQWAGPHVFRF-UHFFFAOYSA-N n-(diethylaminosilyl)-n-ethylethanamine Chemical compound CCN(CC)[SiH2]N(CC)CC OWKFQWAGPHVFRF-UHFFFAOYSA-N 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Landscapes
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-225461 | 2018-11-30 | ||
| JP2018225461 | 2018-11-30 | ||
| JP2019-086812 | 2019-04-26 | ||
| JP2019086812A JP7336873B2 (ja) | 2018-11-30 | 2019-04-26 | 基板処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202025282A TW202025282A (zh) | 2020-07-01 |
| TWI821386B true TWI821386B (zh) | 2023-11-11 |
Family
ID=71085070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108131778A TWI821386B (zh) | 2018-11-30 | 2019-09-04 | 基板處理方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7336873B2 (enExample) |
| TW (1) | TWI821386B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102516340B1 (ko) * | 2020-09-08 | 2023-03-31 | 주식회사 유진테크 | 기판 처리 장치 및 기판 처리 장치의 운용 방법 |
| JP2023002466A (ja) * | 2021-06-22 | 2023-01-10 | 東京エレクトロン株式会社 | プラズマ処理方法、プラズマ処理装置及びプラズマ処理システム |
| JP7561795B2 (ja) * | 2022-06-17 | 2024-10-04 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140363979A1 (en) * | 2012-10-03 | 2014-12-11 | Applied Materials, Inc. | Directional sio2 etch using low-temperature etchant deposition and plasma post-treatment |
| US20170263438A1 (en) * | 2016-03-13 | 2017-09-14 | Applied Materials, Inc. | Methods And Apparatus For Selective Dry Etch |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009094307A (ja) * | 2007-10-10 | 2009-04-30 | Tokyo Electron Ltd | エッチング方法及び記録媒体 |
| JP5374039B2 (ja) * | 2007-12-27 | 2013-12-25 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及び記憶媒体 |
| JP5140608B2 (ja) * | 2009-01-16 | 2013-02-06 | 株式会社アルバック | 真空処理装置及び真空処理方法 |
| JP6670707B2 (ja) * | 2016-08-24 | 2020-03-25 | 東京エレクトロン株式会社 | 基板処理方法 |
-
2019
- 2019-04-26 JP JP2019086812A patent/JP7336873B2/ja active Active
- 2019-09-04 TW TW108131778A patent/TWI821386B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140363979A1 (en) * | 2012-10-03 | 2014-12-11 | Applied Materials, Inc. | Directional sio2 etch using low-temperature etchant deposition and plasma post-treatment |
| US20170263438A1 (en) * | 2016-03-13 | 2017-09-14 | Applied Materials, Inc. | Methods And Apparatus For Selective Dry Etch |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7336873B2 (ja) | 2023-09-01 |
| JP2020096155A (ja) | 2020-06-18 |
| TW202025282A (zh) | 2020-07-01 |
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