JP7336873B2 - 基板処理方法 - Google Patents
基板処理方法 Download PDFInfo
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- JP7336873B2 JP7336873B2 JP2019086812A JP2019086812A JP7336873B2 JP 7336873 B2 JP7336873 B2 JP 7336873B2 JP 2019086812 A JP2019086812 A JP 2019086812A JP 2019086812 A JP2019086812 A JP 2019086812A JP 7336873 B2 JP7336873 B2 JP 7336873B2
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- 239000000758 substrate Substances 0.000 title claims description 115
- 238000003672 processing method Methods 0.000 title claims description 18
- 239000007789 gas Substances 0.000 claims description 99
- 238000000034 method Methods 0.000 claims description 84
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 64
- 238000006243 chemical reaction Methods 0.000 claims description 63
- 238000005530 etching Methods 0.000 claims description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 51
- 229910052710 silicon Inorganic materials 0.000 claims description 51
- 239000010703 silicon Substances 0.000 claims description 51
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 33
- 230000015572 biosynthetic process Effects 0.000 claims description 33
- 230000008859 change Effects 0.000 claims description 33
- 229910052681 coesite Inorganic materials 0.000 claims description 16
- 229910052906 cristobalite Inorganic materials 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims description 16
- 229910052682 stishovite Inorganic materials 0.000 claims description 16
- 229910052905 tridymite Inorganic materials 0.000 claims description 16
- 239000012495 reaction gas Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 3
- -1 ammonium fluorosilicate Chemical compound 0.000 claims description 2
- LKJPSUCKSLORMF-UHFFFAOYSA-N Monolinuron Chemical compound CON(C)C(=O)NC1=CC=C(Cl)C=C1 LKJPSUCKSLORMF-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 289
- 230000008569 process Effects 0.000 description 72
- 239000010410 layer Substances 0.000 description 56
- 238000010586 diagram Methods 0.000 description 52
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 37
- 229910052799 carbon Inorganic materials 0.000 description 37
- 238000010438 heat treatment Methods 0.000 description 24
- 238000000231 atomic layer deposition Methods 0.000 description 22
- 238000005229 chemical vapour deposition Methods 0.000 description 14
- 229910003910 SiCl4 Inorganic materials 0.000 description 8
- 229910003978 SiClx Inorganic materials 0.000 description 8
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 8
- 238000001179 sorption measurement Methods 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- 229910017701 NHxFy Inorganic materials 0.000 description 4
- 230000005856 abnormality Effects 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910003902 SiCl 4 Inorganic materials 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000000414 obstructive effect Effects 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910017855 NH 4 F Inorganic materials 0.000 description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007781 pre-processing Methods 0.000 description 2
- 238000002407 reforming Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910003691 SiBr Inorganic materials 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Images
Landscapes
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW108131778A TWI821386B (zh) | 2018-11-30 | 2019-09-04 | 基板處理方法 |
| US16/564,851 US11114304B2 (en) | 2018-11-30 | 2019-09-09 | Substrate processing method |
| CN201910857745.2A CN111261514B (zh) | 2018-11-30 | 2019-09-09 | 基片处理方法 |
| KR1020190112799A KR102867092B1 (ko) | 2018-11-30 | 2019-09-11 | 기판 처리 방법 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018225461 | 2018-11-30 | ||
| JP2018225461 | 2018-11-30 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020096155A JP2020096155A (ja) | 2020-06-18 |
| JP2020096155A5 JP2020096155A5 (enExample) | 2022-03-16 |
| JP7336873B2 true JP7336873B2 (ja) | 2023-09-01 |
Family
ID=71085070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019086812A Active JP7336873B2 (ja) | 2018-11-30 | 2019-04-26 | 基板処理方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7336873B2 (enExample) |
| TW (1) | TWI821386B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102516340B1 (ko) * | 2020-09-08 | 2023-03-31 | 주식회사 유진테크 | 기판 처리 장치 및 기판 처리 장치의 운용 방법 |
| JP2023002466A (ja) * | 2021-06-22 | 2023-01-10 | 東京エレクトロン株式会社 | プラズマ処理方法、プラズマ処理装置及びプラズマ処理システム |
| JP7561795B2 (ja) * | 2022-06-17 | 2024-10-04 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009094307A (ja) | 2007-10-10 | 2009-04-30 | Tokyo Electron Ltd | エッチング方法及び記録媒体 |
| JP2009158774A (ja) | 2007-12-27 | 2009-07-16 | Tokyo Electron Ltd | 基板処理方法、基板処理装置及び記憶媒体 |
| JP2010165954A (ja) | 2009-01-16 | 2010-07-29 | Ulvac Japan Ltd | 真空処理装置及び真空処理方法 |
| JP2018032720A (ja) | 2016-08-24 | 2018-03-01 | 東京エレクトロン株式会社 | 基板処理方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI591712B (zh) * | 2012-10-03 | 2017-07-11 | 應用材料股份有限公司 | 使用低溫蝕刻劑沉積與電漿後處理的方向性二氧化矽蝕刻 |
| CN108778739B (zh) * | 2016-03-13 | 2021-07-16 | 应用材料公司 | 用于选择性干式蚀刻的方法及设备 |
-
2019
- 2019-04-26 JP JP2019086812A patent/JP7336873B2/ja active Active
- 2019-09-04 TW TW108131778A patent/TWI821386B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009094307A (ja) | 2007-10-10 | 2009-04-30 | Tokyo Electron Ltd | エッチング方法及び記録媒体 |
| JP2009158774A (ja) | 2007-12-27 | 2009-07-16 | Tokyo Electron Ltd | 基板処理方法、基板処理装置及び記憶媒体 |
| JP2010165954A (ja) | 2009-01-16 | 2010-07-29 | Ulvac Japan Ltd | 真空処理装置及び真空処理方法 |
| JP2018032720A (ja) | 2016-08-24 | 2018-03-01 | 東京エレクトロン株式会社 | 基板処理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI821386B (zh) | 2023-11-11 |
| JP2020096155A (ja) | 2020-06-18 |
| TW202025282A (zh) | 2020-07-01 |
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