TWI818569B - 防止焊料溢流的封裝元件及封裝方法 - Google Patents

防止焊料溢流的封裝元件及封裝方法 Download PDF

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Publication number
TWI818569B
TWI818569B TW111120721A TW111120721A TWI818569B TW I818569 B TWI818569 B TW I818569B TW 111120721 A TW111120721 A TW 111120721A TW 111120721 A TW111120721 A TW 111120721A TW I818569 B TWI818569 B TW I818569B
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Taiwan
Prior art keywords
die
solder
electrode pad
pin
overflow
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TW111120721A
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English (en)
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TW202349579A (zh
Inventor
何中雄
沈順吉
李季學
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強茂股份有限公司
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Priority to TW111120721A priority Critical patent/TWI818569B/zh
Priority to US17/853,100 priority patent/US20230395553A1/en
Application granted granted Critical
Publication of TWI818569B publication Critical patent/TWI818569B/zh
Publication of TW202349579A publication Critical patent/TW202349579A/zh

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Abstract

一種防止焊料溢流的封裝元件及封裝方法，是在分配焊料時提供能限制焊料位置的空間或結構，該封裝元件包含一晶粒、一防溢流層、一第一接腳、一第二接腳與一封裝體，該晶粒具有一電極墊，該防溢流層設置於該電極墊的頂面並具有一開口以露出該電極墊的表面，該第一接腳連接該晶粒，該第二接腳通過該防溢流層的該開口而焊接於該晶粒的該電極墊，該封裝體包覆該晶粒。

Description

防止焊料溢流的封裝元件及封裝方法
本發明涉及一種封裝元件及封裝方法，特別是指防止焊料溢流的封裝元件及封裝方法。
習知半導體元件的封裝方法可參考圖4A至圖4J，其中，請參考圖4A，準備一晶圓60，該晶圓60中已形成複數晶粒單元61，每個晶粒單元61的頂面設有電極墊62。請參考圖4B，切割該晶圓60，使該些晶粒單元61彼此分離，每個晶粒單元61形成單一晶粒63之個體，該晶粒63包含一本體630與設置於該本體630頂面的該電極墊62。
請參考圖4C與圖4D，準備一第一導線架64，該第一導線架64包含複數第一接腳640，將該些晶粒63分別設置於該些第一接腳640上的焊料層641，其中，各該晶粒63是以其底部設置於各該焊料層641，該晶粒63的電極墊62表面朝上。
請參考圖4E，進行點膠，利用一點膠機將一焊料65分配於該些晶粒63之電極墊62表面。
然後，進行第二接腳的焊接，其中，複數第二接腳是設置在一第二導線架(圖中未示)，也就是說，該第二導線架的相對兩側分別延伸形成該些第二接腳而為魚骨狀態樣，且該些第二接腳的位置分別對應於圖4D所示該些晶粒63的位置，故當該第二導線架設置在該第一導線架64上時，該些第二接腳能分別對應連接該些晶粒63。如圖4F與圖4G所示，各該第二接腳66的端部底面具有向下凸出的一凸部660，將該凸部660從該晶粒63的上方與該焊料65對接，再實施一回焊(reflow)手段，使該第二接腳66的凸部660與該晶粒63的電極墊62形成焊接，以及使該晶粒63底部與該第一接腳640形成焊接。其中，進行回焊的過程中，該焊料65熔化成為液態，而能同時附著在該電極墊62的表面與該第二接腳66的凸部660，該焊料65冷卻固化後即可固接並電性連接該電極墊62與該第二接腳66。
請參考圖4H，進行封裝步驟(molding)以形成一封裝體67，由該封裝體67包覆該晶粒63。最後將該封裝體67從該第一導線架64取下以得到如圖4I所示的一封裝成品68。
在圖4E進行點膠的步驟中，受限於該點膠機本身的精度及焊料特性，分配給該些晶粒63之電極墊62上的焊料65的量並非均勻，且焊料65的位置也可能有所偏差，舉例來說，當該晶粒63的焊料65被分配較多，有可能導致圖4J所示焊料65A溢流至該電極墊62以外區域的情形，因焊料65A具有導電性，故溢出的焊料65A可能造成晶粒63A發生接點短路之異常或其他電性異常。
有鑒於此，本發明的主要目的是提供能防止焊料溢流的封裝元件及封裝方法，以期克服先前技術所述焊料溢流的問題。
為達前述目的，本發明提供一種防止焊料溢流的封裝元件，包含： 一晶粒，具有一電極墊； 一防溢流層，設置於該電極墊的頂面，該防溢流層具有一開口以露出該電極墊的表面； 一第一接腳，連接該晶粒； 一第二接腳，通過該防溢流層的該開口而焊接於該晶粒的該電極墊；及 一封裝體，包覆該晶粒。
如前所述的封裝元件，根據該第二接腳通過該防溢流層的該開口而焊接於該晶粒的該電極墊之構造，也就是說，該防溢流層的開口中供設置焊料以供進行焊接，因為該防溢流層具有厚度，且該焊料本身具有內聚力，故由該防溢流層限制該焊料的位置，有效避免該焊料溢流。
為達前述目的，本發明提供另一種防止焊料溢流的封裝元件，包含： 一晶粒，具有一電極墊； 一第一接腳，連接該晶粒； 一第二接腳，間隔設置於該第一接腳； 一橋接件，包含： 一第一端，具有一凹部，該凹部通過焊料焊接該晶粒的該電極墊；及 一第二端，連接該第二接腳；以及 一封裝體，包覆該晶粒。
如前所述的封裝元件，根據該橋接件的凹部通過焊料焊接該晶粒的該電極墊之構造，也就是說，由該橋接件的凹部限制該焊料的位置，有效避免該焊料溢流。
為達前述目的，本發明提供一種防止焊料溢流的封裝方法，包含： 準備一晶圓，其具有複數晶粒單元，各該晶粒單元的頂面設有一電極墊； 在各該晶粒單元之電極墊上設置一防溢流層，該防溢流層具有一開口以外露該電極墊的表面； 切割該晶圓，使該些晶粒單元個別形成一晶粒； 將該晶粒置放在一第一接腳上； 在該晶粒上之該防溢流層的開口內設置一焊料，該焊料附著於該電極墊； 進行一第二接腳的焊接，其中，該第二接腳的一端底面具有一凸部，將該凸部從該晶粒上方與該焊料對接，再進行回焊，使該第二接腳的該凸部與該晶粒的電極墊形成焊接；以及 進行封裝以形成一封裝體，該封裝體包覆該晶粒。
如前所述的封裝方法，通過該防溢流層的設置，在該防溢流層的開口內設置該焊料後，因為該防溢流層具有厚度，且該焊料本身具有內聚力，故由該防溢流層限制該焊料的位置，有效避免該焊料在焊接製程中發生溢流的情形。
為達前述目的，本發明提供另一種防止焊料溢流的封裝方法，包含： 準備一晶圓，其具有複數晶粒單元，各該晶粒單元的頂面設有一電極墊； 切割該晶圓，使該些晶粒單元個別形成一晶粒； 將該晶粒設置在一第一接腳上，該第一接腳對向間隔地設有一第二接腳； 在該晶粒的電極墊表面設置一焊料； 進行一橋接件的焊接，其中，該橋接件包含一第一端與一第二端，該第一端的底面具有一凹部，將該凹部從該晶粒的上方與該焊料對接，使該焊料進入該凹部內，且該橋接件的第二端設置於該第二接腳，再進行回焊，使該橋接件的凹部與該晶粒的電極墊形成焊接；以及 進行封裝以形成一封裝體，該封裝體包覆該晶粒。
如前所述的封裝方法，通過該橋接件的設置，該至少一焊料球能進入該凹部的空間內，由該橋接件的凹部限制該焊料的位置，有效避免該焊料在焊接製程中發生溢流的情形。
為達前述目的，本發明提供再一種防止焊料溢流的封裝方法，包含： 準備一晶圓，其具有複數晶粒單元，各該晶粒單元的頂面設有一電極墊； 切割該晶圓，使該些晶粒單元個別形成一晶粒； 以網板印刷方式在該晶粒的電極墊表面中央處設置一焊料； 透過一吸嘴吸取該晶粒，以將該晶粒設置在一第一接腳上，該第一接腳對向間隔地設有一第二接腳； 將一橋接件焊接至該晶粒的電極墊，及連接該第二接腳；以及 進行封裝以形成一封裝體，該封裝體包覆該晶粒。
如前所述的封裝方法，當採用網板印刷手段在該晶粒的電極墊表面設置該焊料時，能由網板的孔洞大小及位置精確地限制所分配之該焊料的量與位置，有效避免該焊料在焊接製程中發生溢流的情形。
為達前述目的，本發明提供再一種防止焊料溢流的封裝方法，包含： 準備一晶圓，其具有複數晶粒單元，各該晶粒單元的頂面設有一電極墊； 切割該晶圓，使該些晶粒單元個別形成一晶粒； 分配助焊劑在該晶粒的電極墊表面中央處，並將至少一焊料球設置在該助焊劑； 透過一吸嘴吸取該晶粒，以將該晶粒設置在一第一接腳上，該第一接腳對向間隔地設有一第二接腳； 進行一橋接件的焊接，其中，該橋接件包含一第一端與一第二端，該第一端的底面具有一凹部，將該凹部從該晶粒的上方與該至少一焊料球對接，使該至少一焊料球進入該凹部內，且該橋接件的第二端設置於該第二接腳，再進行回焊，使該橋接件的凹部與該晶粒的電極墊形成焊接；以及 進行封裝以形成一封裝體，該封裝體包覆該晶粒。
如前所述的封裝方法，當在該晶粒的電極墊表面設置該至少一焊料球時，透過選用某一特定規格的焊料球即能精準控制焊料用量，再由該橋接件的凹部限制該至少一焊料球的位置，有效避免該至少一焊料球在焊接製程中發生溢流的情形。
綜上所述，本發明在分配焊料於電極墊表面時，提供能限制焊料位置的空間或結構，有效避免焊料在焊接製程中發生溢流的情形。
在封裝製程中，會分配焊料至晶粒(die，或稱裸晶)的電極墊表面，以供該晶粒可焊接至導線架或其他金屬構件。其中，焊料的分配狀態與焊接品質息息相關，為了防止焊料溢流並優化焊接品質，本發明採取的技術手段是在分配焊料時，提供能限制焊料位置的空間或結構，另需說明的是，本發明較佳的是應用在頂面需要焊接的晶粒構造，該晶粒例如可為二極體、三極體、金氧半場效電晶體(MOS FET)之晶粒，但不以此為限。本發明的實施例詳述如下。
1、第一實施例
請參考圖1A，準備一晶圓10，該晶圓10中已形成複數晶粒單元11，每個晶粒單元11的頂面設有電極墊12。
請參考圖1B，在每個晶粒單元11之電極墊12上設置一防溢流層13，該防溢流層13的中央處具有一開口130，也就是說，該防溢流層13局部覆蓋該電極墊12，該電極墊12的表面外露於該開口130，另一方面，該電極墊12的尺寸可小於該防溢流層13的尺寸，該電極墊12的外緣位於該防溢流層13的外緣之內。舉例來說，該防溢流層13可透過一微影製程(photolithography)製成，可先在該晶圓10的表面塗覆一PI(Polyimide，聚醯亞胺)層，然後在該PI層上塗覆一光阻層；對該光阻層與該PI層進行圖案化後，移除該光阻層，該PI層留下的部分即形成該些防溢流層13之構造。
除了透過該微影製程製作該防溢流層13，亦可由一雷射成型製程、一印刷製程或其他方式製作該防溢流層13。舉例來說，於該雷射成型製程中，可先在該晶圓10的表面塗覆一PI層，並透過雷射燒蝕該PI層的特定位置以進行圖案化後，能移除該PI層的部分，該PI層留下的部分即形成該些防溢流層13之構造；於該印刷製程中，網板上的孔洞大小與位置係對應於該些防溢流層13的構造，故可利用PI原料透過該網板在該晶圓10的表面直接印刷出該些防溢流層13的構造。
然後切割該晶圓10，使該些晶粒單元11彼此分離，請參考圖1C，每個晶粒單元110形成單一晶粒14，圖1C所示之相鄰晶粒14之間具有切割後形成的切割道15。圖1D為該晶粒14之個體的剖面示意圖，其包含一本體140、設置於該本體140頂面的該電極墊12以及設置於該電極墊12上的該防溢流層13，該防溢流層13的中央處具有該開口130，該電極墊12的表面外露於該開口130。該本體140之底面亦可形成一底部接點141，但本發明不以此為限。
請參考圖1E，準備一第一導線架16，該第一導線架16為中空框架且包含兩個側邊條161，該兩個側邊條161的位置呈相對設置，並分別往內延伸形成間隔排列的複數第一接腳162，每個第一接腳162為片體，其頂面分佈有焊料層163。需說明的是，該第一導線架16的構造僅為舉例說明而已，而該些焊料層163可以是以網板印刷(screen print)方式塗佈在該些第一接腳162上的錫膏。
請參考圖1F，進行黏晶(die bond)，將該些晶粒14分別置放在該些第一接腳162的焊料層163上，其中，該晶粒14底面的底部接點141設置於該焊料層163，該晶粒14的頂面朝上，亦即該電極墊12的表面朝上。
請參考圖1G，進行點膠，可透過一點膠機將一焊料17分佈於該晶粒14的電極墊12，並使該焊料17位於該防溢流層13的開口130內，因為該防溢流層13具有厚度，且該焊料17本身具有內聚力，故該焊料17的位置被限制在該防溢流層13的開口130內，其中，該焊料17可為錫膏。
另一方面，該焊料17的設置方式並不以前述的點膠方式為限，舉例而言，可於圖1C所示切割該晶圓10的步驟後，該些晶粒14雖然彼此分離，但該些晶粒14之間的相對位置仍維持固定，故可以網板印刷(screen print)方式直接在該些晶粒14上之該防溢流層13的開口130內印塗塗佈該些焊料17，可理解的是，網板上的複數孔洞大小與位置係對應於該些防溢流層13的開口130的大小與位置。
請參考圖1H與圖1I，進行第二接腳18的焊接，其中，複數第二接腳18是設置在一第二導線架(圖中未示)，也就是說，該第二導線架的相對兩側分別延伸形成該些第二接腳18而為魚骨狀態樣，且該些第二接腳18的位置分別對應於圖1F所示該些晶粒14的位置，故當該第二導線架設置在該第一導線架16上時，該些第二接腳18能分別對應連接該些晶粒14。如圖1H與圖1I所示，各該第二接腳18的一端的底面具有向下凸出的一凸部180，將該凸部180從該晶粒14的上方與該焊料17對接，再實施一回焊(reflow)手段，使該第二接腳18的凸部180與該晶粒14的電極墊12形成焊接，以及使該晶粒14底部的底部接點141(如圖1D所示)與該第一接腳162形成焊接。
請參考圖1J，進行封裝步驟(molding)以形成一封裝體19，該封裝體19完全包覆該晶粒14及局部包覆該第一接腳162與該第二接腳18，也就是說，該第一接腳162相對於該晶粒14的一端外露於該封裝體19，該第二接腳18相對於該晶粒14的一端外露於該封裝體19。
然後，切割該第一導線架16和該第二導線架以得到如圖1K所示本發明封裝元件的成品。
是以，本發明封裝元件的實施例包含一晶粒14、一防溢流層13、一第一接腳162與一第二接腳18，該晶粒14包含一本體140與一電極墊12，該電極墊12可設置於該本體140的頂面，該晶粒14亦可包含一底部接點141，該底部接點141設置於該本體140的底面，但該晶粒14的構造並不以此為限。該防溢流層13設置於該電極墊12的頂面，其中，該防溢流層13具有一開口130，該電極墊12的表面外露於該開口130。該第一接腳162的內端連接該晶粒14，例如可焊接於該晶粒14底部的底部接點141；該第二接腳18的內端通過該防溢流層13的開口130而焊接於該晶粒14的電極墊12，也就是說，該第一接腳162內端與該晶粒14的底部接點141之間具有經回焊固化的焊料層163，該第二接腳18的內端與該電極墊12之間及該防溢流層13的開口130中有經回焊固化的焊料17。該封裝體19包覆該晶粒14及該第一接腳162的內端與該第二接腳18的內端，而該第一接腳162的外端與該第二接腳18的外端可外露於或延伸出該封裝體19。
總結本發明的第一實施例，是利用該防溢流層13限制該焊料17的位置，其中，因為該防溢流層13具有厚度，該防溢流層13於開口130的壁面能阻擋該焊料17的流動，且該焊料17本身亦具有內聚力，故該焊料17的位置自然被限制該防溢流層13的開口130內，不致往外溢流。
2、第二實施例
請參考圖2A，準備一晶圓20，該晶圓20中已形成複數晶粒單元21，每個晶粒單元21的頂面設有電極墊22。
然後切割該晶圓20，使該些晶粒單元21彼此分離，請參考圖2B，每個晶粒單元21形成單一晶粒23，圖2B所示之相鄰晶粒23之間具有切割後形成的切割道24，該晶粒23包含一本體230與設置於該本體230頂面的該電極墊22。該本體230之底面亦可形成一底部接點(如圖1D所示的底部接點141)，但本發明不以此為限。
請參考圖2C，準備一第一導線架25，該第一導線架25包含兩個側邊條251與位於該個兩側邊條251之間且相互平行的一骨幹252，該骨幹252呈魚骨狀，該骨幹252相對兩側分別往外延伸形成間隔排列的複數第一接腳255，每個第一接腳255為片體，其頂面設有焊料層256，該兩個側邊條251的位置呈相對設置，並分別往內延伸形成間隔排列的複數第二接腳253，每個第二接腳253為片體，其頂面設有焊料層254。其中，該些第一接腳255的位置分別對應於該些第二接腳253的位置，且兩相鄰的第二接腳253和第一接腳255的端部之間具有一間隙257，也就是說，各該第一接腳255對向間隔地設有各該第二接腳253。需說明的是，該第一導線架25的構造僅為舉例說明而已，並非用以限制本發明，而該些焊料層256、254可以是以網板印刷(screen print)方式分別塗佈在該些第一接腳255和該些第二接腳253上的錫膏。
請參考圖2D，進行黏晶(die bond)，將該些晶粒23置放在該些第一接腳255的焊料層256上，其中，該晶粒23的頂面朝上，亦即該電極墊22的表面朝上。
然後在該些晶粒23的電極墊22表面設置一焊料，其中可通過一植球手段(ball bond)進行該焊料的設置，關於該植球手段，請參考圖2E，首先可分配助焊劑26(flux)，可利用一點膠機將助焊劑26分配在該些晶粒23的電極墊22表面中央處；再請參考圖2F，將至少一焊料球27設置在該助焊劑26上，該至少一焊料球27即為該焊料，例如可為錫球(solder ball)，本實施例僅以一個焊料球27為範例進行說明，實際應用時，可視焊接需求而設置多個焊料球27。另一方面，前述圖2E、圖2F的植球手段可由網板印刷(screen print)方式取代，直接在該些晶粒23的電極墊22表面印塗塗佈該焊料，可理解的是，網板上的複數孔洞位置係對應於該些晶粒23的電極墊22的位置。
請參考圖2G與圖2H，進行橋接件28的焊接，其中，複數橋接件28是設置在一第二導線架(圖中未示)，也就是說，該第二導線架的相對兩側分別延伸形成該些橋接件28而為魚骨狀態樣，且該些橋接件28的位置分別對應於圖2C所示該些焊料層254與圖2D所示電極墊22的位置，故當該第二導線架設置在該第一導線架25上時，該些橋接件28能分別對應連接該些晶粒14與第二接腳253。如圖2G與圖2H所示，各該橋接件28包含一第一端281與一第二端282，該第一端281的底面具有內凹的一凹部283，該凹部283從該晶粒23的上方往該焊料球27移動而對接，使該焊料球27進入該凹部283的空間內，且該焊料球27可於該凹部283內抵接該橋接件28，該橋接件28的第二端282設置於該第二接腳253的焊料層254，然後再實施一回焊(reflow)手段，使該橋接件28的凹部283與該晶粒23的電極墊22形成焊接，以及使該晶粒23底部與該第一接腳255形成焊接，以及使該橋接件28的第二端281與該第二接腳253形成焊接。
請參考圖2I，進行封裝步驟(molding)以形成一封裝體29，該封裝體29完全包覆該晶粒23與該橋接件28，及局部包覆該第一接腳255與該第二接腳253，也就是說，該第一接腳255相對於該晶粒23的一端外露於該封裝體29，該第二接腳253相對於該晶粒23的一端外露於該封裝體29。然後，切割該第一導線架25和該第二導線架以取下該封裝體29，得到本發明封裝元件的成品(其外觀可參考圖1K)。
是以，請配合參考圖2I，本發明封裝元件的第二實施例包含一晶粒23、一第一接腳255、一第二接腳253與一橋接件28，該晶粒23包含一本體230與一電極墊22，該電極墊22設置於該本體230的頂面，該晶粒23亦可包含一底部接點(如圖1D所示的底部接點141)，該底部接點可設置於該本體230的底面，但該晶粒23的構造並不以此為限。該第一接腳255連接該晶粒23，例如該第一接腳255的內端可焊接於該晶粒23的底部接點，該第二接腳253間隔設置於該第一接腳255，該橋接件28具導電性，該橋接件28的第一端281焊接於該晶粒23的電極墊22，該橋接件28的第二端282連接該第二接腳253的內端，也就是說，該第一接腳255內端與該晶粒23的底部接點之間具有經回焊固化的焊料層256，該橋接件28的第一端281的凹部283內與該晶粒23的電極墊22之間有經回焊固化的焊料27'(源自於圖2H所示的焊料球27)，該橋接件28的第二端282與該第二接腳253的內端之間也可有經回焊固化的焊料層254。該封裝體29包覆該晶粒23與該橋接件28，及包覆該第一接腳255與該第二接腳253的內端，該第一接腳255與該第二接腳253的外端外露於或延伸出該封裝體29。
總結本發明的第二實施例，是利用該橋接件28之凹部283限制該焊料27'或該至少一焊料球27的位置，也就是利用該橋接件28於該凹部283中的壁面阻擋該至少一焊料球27熔化時的流動，不致往外溢流。此外，市面上已有多種不同體積規格的焊料球，故透過選用某一特定規格的焊料球及其數量即可精準控制焊料用量，不致過量或過少，而能有效掌控焊接品質。
3、第三實施例
請參考圖3A，準備一晶圓30，該晶圓30中已形成複數晶粒單元31，每個晶粒單元31的頂面設有電極墊32。
然後切割該晶圓30，使該些晶粒單元31彼此分離，請參考圖3B，每個晶粒單元31形成單一晶粒33，圖3B所示之相鄰晶粒33之間具有切割後形成的切割道34，該晶粒33包含一本體330與設置於該本體330頂面的該電極墊32。
請參考圖3C與圖3D，在每一晶粒33的電極墊32表面設置一焊料35，該焊料35可位於該電極墊32的中央，例如可以網板印刷(screen print)方式直接在該些晶粒33的電極墊32表面設置焊料35，可理解的是，網板上的複數孔洞的位置對應於該些晶粒33的電極墊32的位置。
請參考圖3E，準備一第一導線架36，該第一導線架36的構造可參考第二實施例的圖2C的第一導線架25，在此容不重複贅述，簡言之，圖3E所示該第一導線架36包含兩個側邊條361與位於該個兩側邊條361之間的一骨幹362，該骨幹362相對兩側分別往外延伸形成複數第一接腳365，各第一接腳365設有焊料層366，各該側邊條361往內延伸形成複數第二接腳363，各第二接腳363設有焊料層364。
請參考圖3F、圖3G及圖3H，進行黏晶(die bond)，將該些晶粒33置放在該第一接腳365的焊料層366上，其中，本發明是以一吸嘴40吸取各該晶粒33並移動至該焊料層366。該吸嘴40內部包含氣體流道41，該吸嘴40的底面設有複數吸孔42，該些吸孔42連通該氣體流道41，該吸嘴40的底面設有一凹槽43，該凹槽43位於該些吸孔42的中央，該些吸孔42的位置對應於該晶粒33頂面之周邊處，當該些吸孔42吸住該晶粒33頂面的周邊處時，該凹槽43提供的內凹空間可避免該焊料35沾附至該吸嘴40的底面，是以，透過該吸嘴40吸取該晶粒33時，該吸嘴40能避開該焊料35而不會沾到該焊料35。
請參考圖3I，將一橋接件37焊接至該晶粒33的電極墊32，及連接該第二接腳363，其中，複數橋接件37是設置在一第二導線架(圖中未示)，該第二導線架的構造可參考第二實施例，在此容不重複贅述。如圖3I所示，各該橋接件37具有一第一端371與一第二端372，該第一端371的底面具有向下凸出的一凸部373，將該凸部373從該晶粒33的上方與該電極墊32上的焊料35對接，該橋接件37的第二端372設置於該第二接腳363的焊料層364，再實施一回焊(reflow)手段，使該橋接件37的凸部373與該晶粒33的電極墊32形成焊接，以及使該晶粒22底部與該第一接腳365形成焊接，以及使該橋接件37的第二端372與該第二接腳363形成焊接。
然後，進行封裝步驟(molding)以形成一封裝體，可依第一實施例的圖1J和第二實施例的圖2I類推，容不贅述，簡言之，該封裝體包覆該晶粒33與該橋接件37，及局部包覆該第一接腳365與該第二接腳363，該第一接腳365相對於該晶粒33的一端外露於該封裝體，該第二接腳363相對於該晶粒33的一端外露於該封裝體29。然後，切割該第一導線架36和該第二導線架以取下該封裝體，得到本發明封裝元件的成品(其外觀可參考圖1K)。
前述中，圖3C與圖3D的網板印刷手段亦可以植球手段(ball bond)取代，所述植球手段可參考第二實施例的圖2E、圖2F，故以該吸嘴40吸取該晶粒時，焊料球可位於該吸嘴40的凹槽43中；對應的，第三實施例之圖3I的橋接件37結構可由第二實施例之圖2G至圖2I的橋接件28取代。
總結本發明的第三實施例，當採用網板印刷手段在該晶粒33的電極墊32表面中央處設置該焊料35，由網板的孔洞大小及位置精確地限制所分配之焊料35的量與位置；另當採用植球手段在該晶粒33的電極墊32表面中央處設置焊料球27，亦可精準控制焊料用量，再由橋接件28的凹部283限制焊料球27熔化時的流動。此外，透過該吸嘴40的結構，能在不沾到該焊料35的前提下吸取並移動該些晶粒33至該第一接腳365上。
綜上所述，本發明在分配焊料於電極墊表面時，能提供能限制焊料位置的空間或結構，例如本發明第一實施例的該防溢流層13、第二實施例的該至少一焊料球27與橋接件28的凹部283結構，以及第三實施例所採取植球手段或網板印刷手段設置該焊料，故能有效避免焊料在焊接製程中發生溢流的情形。
10,20,30,60:晶圓 11,21,31,61:晶粒單元 12,22,32,62:電極墊 13:防溢流層 130:開口 14,23,33,63:晶粒 140,230,330,630:本體 141:底部接點 15,24,34:切割道 16,25,36,64:第一導線架 161,251,361:側邊條 162,255,365,640:第一接腳 163,254,256,364,366,641:焊料層 17,27',35,65,65A:焊料 18,253,363,66:第二接腳 180,660:凸部 19,29,67:封裝體 252,362:骨幹 257:間隙 26:助焊劑 27:焊料球 28,37:橋接件 281,371:第一端 282,372:第二端 283:凹部 373:凸部 40:吸嘴 41:氣體流道 42:吸孔 43:凹槽 68:封裝成品
圖1A至圖1K：本發明第一實施例的製作流程示意圖。 圖2A至圖2I：本發明第二實施例的製作流程示意圖。 圖3A至圖3E、圖3H及圖3I：本發明第三實施例的製作流程示意圖。 圖3F：本發明第三實施例中，所採用的吸嘴的立體外觀示意圖。 圖3G：本發明第三實施例中，所採用的吸嘴的剖面示意圖。 圖4A至圖4J：習知封裝元件的製作流程示意圖。
12:電極墊
14:晶粒
162:第一接腳
17:焊料
18:第二接腳
19:封裝體

Claims (10)

  1. 一種防止焊料溢流的封裝元件，包含：一晶粒，包含一本體與一電極墊，該電極墊設置於該本體的頂面；一防溢流層，設置於該電極墊的頂面，該防溢流層經圖案化具有一開口以露出該電極墊的表面，該防溢流層局部覆蓋該電極墊，該電極墊的外緣位於該防溢流層的外緣之內；一第一接腳，連接該晶粒；一第二接腳，通過在該防溢流層的該開口設置焊料而焊接於該晶粒的該電極墊；及一封裝體，包覆該晶粒。
  2. 一種防止焊料溢流的封裝元件，包含：一晶粒，具有一電極墊；一第一接腳，連接該晶粒；一第二接腳，間隔設置於該第一接腳；一橋接件，包含：一第一端，具有一凹部，該凹部通過焊料焊接該晶粒的該電極墊；及一第二端，連接該第二接腳；以及一封裝體，包覆該晶粒。
  3. 一種防止焊料溢流的封裝方法，包含：準備一晶圓，其具有複數晶粒單元，各該晶粒單元的頂面設有一電極墊；在各該晶粒單元之電極墊上設置一防溢流層，該防溢流層具有一開口以外露該電極墊的表面；切割該晶圓，使該些晶粒單元個別形成一晶粒；將該晶粒置放在一第一接腳上； 在該晶粒上之該防溢流層的開口內設置一焊料，該焊料附著於該電極墊；進行一第二接腳的焊接，其中，該第二接腳的一端底面具有一凸部，將該凸部從該晶粒上方與該焊料對接，再進行回焊，使該第二接腳的該凸部與該晶粒的電極墊形成焊接；以及進行封裝以形成一封裝體，該封裝體包覆該晶粒。
  4. 如請求項3所述之防止焊料溢流的封裝方法，其中，該防溢流層是透過微影製程、雷射成型製程或印刷製程所製成。
  5. 一種防止焊料溢流的封裝方法，包含：準備一晶圓，其具有複數晶粒單元，各該晶粒單元的頂面設有一電極墊；切割該晶圓，使該些晶粒單元個別形成一晶粒；將該晶粒設置在一第一接腳上，該第一接腳對向間隔地設有一第二接腳；在該晶粒的電極墊表面設置一焊料；進行一橋接件的焊接，其中，該橋接件包含一第一端與一第二端，該第一端的底面具有一凹部，將該凹部從該晶粒的上方與該焊料對接，使該焊料進入該凹部內，且該橋接件的第二端設置於該第二接腳，再進行回焊，使該橋接件的凹部與該晶粒的電極墊形成焊接；以及進行封裝以形成一封裝體，該封裝體包覆該晶粒。
  6. 如請求項5所述之防止焊料溢流的封裝方法，在該晶粒的電極墊表面設置該焊料的步驟中，包含：分配助焊劑在該晶粒的電極墊表面；將該焊料設置在該助焊劑上，其中，該焊料為至少一焊料球。
  7. 一種防止焊料溢流的封裝方法，包含：準備一晶圓，其具有複數晶粒單元，各該晶粒單元的頂面設有一電極墊；切割該晶圓，使該些晶粒單元個別形成一晶粒； 以網板印刷方式在該晶粒的電極墊表面中央處設置一焊料；透過一吸嘴吸取該晶粒，以將該晶粒設置在一第一接腳上，該第一接腳對向間隔地設有一第二接腳；將一橋接件焊接至該晶粒的電極墊，及連接該第二接腳；以及進行封裝以形成一封裝體，該封裝體包覆該晶粒。
  8. 如請求項7所述之防止焊料溢流的封裝方法，在將該橋接件焊接該晶粒的電極墊的步驟中，該橋接件具有一第一端與一第二端，該第一端的底面具有一凸部，將該凸部從該晶粒的上方與該電極墊上的焊料對接，該第二端連接該第二接腳，再進行回焊，使該凸部與該晶粒的電極墊形成焊接。
  9. 一種防止焊料溢流的封裝方法，包含：準備一晶圓，其具有複數晶粒單元，各該晶粒單元的頂面設有一電極墊；切割該晶圓，使該些晶粒單元個別形成一晶粒；分配助焊劑在該晶粒的電極墊表面中央處，並將至少一焊料球設置在該助焊劑；透過一吸嘴吸取該晶粒，以將該晶粒設置在一第一接腳上，該第一接腳對向間隔地設有一第二接腳；進行一橋接件的焊接，其中，該橋接件包含一第一端與一第二端，該第一端的底面具有一凹部，將該凹部從該晶粒的上方與該至少一焊料球對接，使該至少一焊料球進入該凹部內，且該橋接件的第二端設置於該第二接腳，再進行回焊，使該橋接件的凹部與該晶粒的電極墊形成焊接；以及進行封裝以形成一封裝體，該封裝體包覆該晶粒。
  10. 如請求項9所述之防止焊料溢流的封裝方法，其中，該吸嘴的底面設有複數吸孔與一凹槽，該凹槽位於該些吸孔的中央，該些吸孔的位置對應於該晶粒頂面之周邊。
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